Thermal Packaging Structure of Power Semiconductor Modules

Abstract

A heat dissipation packaging structure for a power semiconductor module includes a heat dissipation base, a circuit board (containing a power semiconductor module composed of chips) disposed on the base, copper nut terminals, a shell sidewall surrounding the base, double insulating adhesive, and the heat dissipation module. The copper nut terminals act as internal and external current bridges, connecting to the chips via wires; the shell sidewalls fill the space; a first insulating adhesive covers the circuit board; the heat dissipation module is disposed on the first insulating adhesive, with through-holes allowing the copper nut terminals to pass through and make tight contact; a second insulating adhesive is injected above the heat dissipation module. This invention achieves direct thermal coupling between the heat dissipation module and the copper nut terminals, forming a three-dimensional heat dissipation network in conjunction with the heat dissipation base and highly thermally conductive insulating adhesive, resulting in a significant reduction in overall temperature rise.

Claims

1. A heat dissipation packaging structure for a power semiconductor module, comprising: A heat dissipation base; At least one circuit board disposed on the heat dissipation base, the circuit board including at least one chip, comprising a power semiconductor module; at least one copper nut terminal disposed on the heat dissipation base or the circuit board, the copper nut terminal serving as a bridge between external current and internal current of the power semiconductor module, wherein the chip is electrically connected to the copper nut terminal through multiple wires; a plastic shell sidewall disposed surrounding the heat dissipation base, the interior of the plastic shell sidewall forming a filling space, wherein the height of the plastic shell sidewall is lower than the height of the copper nut terminal; a first insulating adhesive injected into a portion of the filling space to form a first insulating layer and cover the circuit board; A heat dissipation module is disposed on the first insulating adhesive, and the surface of the heat dissipation module has at least one through hole for the copper nut terminal to pass through accordingly, wherein the heat dissipation module is used to dissipate the heat generated by the copper nut terminal; and a second insulating adhesive is injected into another part of the filling space to form a second insulating layer and is located on the heat dissipation module, wherein the injection height of the second insulating adhesive does not exceed the height of the copper nut terminal, wherein the copper nut terminal is used to conduct current.

2. The heat dissipation packaging structure of the power semiconductor module as described in claim 1, wherein the heat dissipation module is a heat sink fin.

3. The heat dissipation packaging structure of the power semiconductor module as described in claim 1, wherein the types of chips are one or various combinations thereof, including diode chips, metal oxide semiconductor (MOS) chips, bipolar junction transistor (BJT) chips, and insulated gate bipolar transistor (IGBT) chips.

4. The heat dissipation packaging structure of the power semiconductor module as described in claim 3, wherein the metal oxide semiconductor (MOS) chip, bipolar junction transistor (BJT) chip, and insulated gate bipolar transistor (IGBT) chip are used for switching functions.

5. The heat dissipation packaging structure of the power semiconductor module as described in claim 3, wherein the diode chip of such chip is used for rectification function.

6. The heat dissipation packaging structure of the power semiconductor module as described in claim 3 further includes at least one set of control terminals for receiving at least one external control signal to determine whether the chips are turned on.

7. The heat dissipation package structure of the power semiconductor module as described in claim 1, wherein the number of copper nut terminals is three.

8. The heat dissipation packaging structure of the power semiconductor module as described in claim 1, wherein the circuit board further includes at least one electronic component connected to the chip to jointly form the power semiconductor module.

9. A heat dissipation packaging structure for a power semiconductor module, comprising: A heat dissipation base; At least one circuit board disposed on the heat dissipation base, the circuit board including at least one chip, comprising a power semiconductor module; at least one copper nut terminal disposed on the heat dissipation base or the circuit board, the copper nut terminal serving as a bridge between external current and internal current of the power semiconductor module, wherein the chip is electrically connected to the copper nut terminal through multiple wires and the copper nut terminal serves as a current conductor; a plastic shell sidewall disposed surrounding the heat dissipation base, the interior of the plastic shell sidewall forming a filling space, wherein the height of the plastic shell sidewall is lower than the height of the copper nut terminal; a first insulating adhesive injected into a portion of the filling space to form a first insulating layer and cover the circuit board; A heat dissipation module is disposed on the first insulating adhesive, and the surface of the heat dissipation module has at least one through hole for the copper nut terminal to pass through accordingly, wherein the heat dissipation module is used to dissipate the heat generated by the copper nut terminal; and a second insulating adhesive is injected into another part of the filling space to form a second insulating layer and is located on the heat dissipation module, wherein the injection height of the second insulating adhesive does not exceed the height of the copper nut terminal, wherein the copper nut terminal is used to conduct current, and the type of chip is a diode chip and is used to rectify current.

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