Apparatus for rapid local stress screening of potential failure seeds in semiconductor packaging materials

Abstract

This invention relates to semiconductor packaging material testing equipment, and in particular to a rapid screening device that utilizes local stress anomaly characteristics, refractive index changes, phase deflection, and optical shear interference signals to provide early warning of potential failures. The first optical path uses schlieren optics to detect the internal refractive index gradient and local stress anomalies of the material; the second optical path uses shear interference to detect wavefront gradient changes and local phase anomalies. By using information acquired synchronously through dual optical paths, local stress distribution maps, phase defect maps, and information on potential failure precursor regions can be established to provide rapid screening and yield improvement applications for semiconductor packaging material manufacturing processes. Applicable materials include: glass interlayer, Ajinomoto additive film carrier material, photosensitive polyimide material, polybenzoxazole material, non-conductive adhesive film, dry film photoresist material, ceramic substrate and other encapsulation materials.

Claims

1. A local stress rapid screening device for early warning of potential failure precursors in semiconductor packaging materials, comprising: a light source module (1) for providing detection light to a sample (11); a polarizing module (2) disposed in the optical path of the detection light; an imaging lens module (7) for collecting detection light passing through or reflected by the sample (11); a schlieren optical module (4) disposed between the imaging lens module (7) and a first image sensor (8) for converting light deflection into image brightness changes; the first image sensor (8) for acquiring schlieren images; an analysis module (9) connected to the first image sensor (8) for identifying local stress anomalies and potential failure precursor areas based on the schlieren images; and a display module (10) connected to the analysis module (9) for displaying analysis results.

2. The apparatus according to claim 1, further comprising a reflection / transmission switching module (5) disposed on the detection optical path for selectively switching between a transmissive detection mode and a reflective detection mode.

3. The apparatus according to claim 1, further comprising a wavelength switching module (3) disposed in the optical path of the detection light for selectively switching detection light of different wavelengths.

4. The apparatus according to claim 3, wherein the wavelength of the detection light includes one or a combination of 405 nm, 530 nm, 850 nm and 1310 nm.

5. The apparatus according to claim 1, wherein the polarizing module (2) includes a polarizer, an analyzer and an optional quarter-wave plate for adjusting the polarization state of the detection light.

6. The apparatus according to claim 1, further comprising a multi-angle illumination module (6) disposed around the sample (11) for providing detection light to the sample (11) from different directions.

7. The apparatus according to claim 1, further comprising a beam splitting module (14), a shearing interference module (15), and a second image sensor (16); wherein the beam splitting module (14) distributes the imaging beam to a first optical path and a second optical path, and the second optical path, after passing through the shearing interference module (15), acquires a shearing interference image by the second image sensor (16).

8. The apparatus according to claim 7, wherein the analysis module (9) establishes a stress distribution map (12) based on the schlieren image and establishes a phase defect map (17) and optical path difference gradient information (18) based on the shearing interference image, and identifies potential failure precursor regions (13) by comparing the stress distribution map (12) and the phase defect map (17).

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