CZOCHRALSKI-GROWING OXIDE SINGLE CRYSTALS OF BISMUTH SILICATE BI4Si3O12

Abstract

Invention relates to Czochralski-growing oxide single crystals of bismuth silicate Bi4Si3O12. The method, according to which the raw material is loaded into a crucible, which is installed in a single crystal growing unit, the chamber is evacuated, the chamber is filled with a mixture of helium and argon gases, followed by heating to a temperature of 600 °C and air is added, with the ratio of argon-helium-air gases being 32-38:0.1-5:10-12, and heated to a temperature that is 30-35 °C higher than the melting temperature of the raw material, then a crystal is formed on a seed, which is rotated at a speed of 6-30 rpm, and the crystal is grown at a pulling speed of 0.5-3 mm / h, the crystal is separated from the melt by accelerated movement of the rod at a speed of 250 mm / h and the crystal is cooled at a speed of 10-50 °C / h to a temperature of 18-25 °C. The method provides for the production of single crystals with increased light output by 29% and improved energy separation by 17.6%, which allows reducing platinum losses in crucibles by a factor of 4.5.