Wire bonding directly on exposed conductive vias and interconnects and related systems and methods
By laser-drilling and filling conductive vias and interconnects for direct wirebonding in semiconductor devices, the issues of corrosion and space occupancy in bond fingers are addressed, resulting in smaller, faster, and more reliable semiconductor devices.
Patent Information
- Authority / Receiving Office
- US · United States
- Patent Type
- Applications(United States)
- Current Assignee / Owner
- MICRON TECHNOLOGY INC
- Filing Date
- 2026-03-16
- Publication Date
- 2026-07-23
AI Technical Summary
Existing stacked semiconductor devices face issues with bond fingers and bond pads corroding and occupying valuable space, leading to potential damage and increased size due to the need for additional routing structures.
The solution involves forming a package substrate with conductive vias and interconnects that are laser-drilled and filled with conductive material, allowing direct wirebonding to the upper surface without bond fingers, and incorporating redistribution layers to optimize signal routing and reduce corrosion risk.
This approach reduces corrosion risk, minimizes signal travel length, and conserves space on the package substrate, enabling smaller device sizes and faster signal transmission.
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