Grinding apparatus

Abstract

A grinding apparatus includes a grinding unit configured to grind a molding resin layer of a workpiece, a measurement unit configured to measure a thickness of the molding resin layer, and a controller. The controller is configured to control the measurement unit to measure the thickness of the molding resin layer, obtain thickness information of the molding resin layer from the measurement unit, determine at least one grinding condition based on the thickness information of the molding resin layer, and control the grinding unit to perform a grinding process on the workpiece, the grinding process corresponding to the at least one grinding condition. The workpiece includes a substrate and the molding resin layer on the substrate, and the molding resin layer is colored or opaque.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This U.S. non-provisional application claims priority under 35 U.S.C. § 119 to Japanese Patent Application No. 2025-012571, filed on Jan. 29, 2025, in the Japanese Patent Office, and to Korean Patent Application No. 10-2025-0050420, filed on Apr. 17, 2025, in the Korean Intellectual Property Office, the disclosures of both these applications are incorporated by reference herein in their entirety.BACKGROUND

[0002] Some example embodiments relate to a grinding apparatus configured to grind a molding resin layer of a workpiece.

[0003] In a semiconductor manufacturing process, after a silicon chip or copper pillar is arranged on a glass substrate, a molding resin layer covering the silicon chip or the copper pillar may be formed using a molding resin. Next, a process of processing a surface of the molding resin layer by grinding and forming a wiring on the processed surface may be performed.

[0004] In this process, grinding may be performed on the molding resin layer to expose the silicon chip or the copper pillar. However, since the molding resin layer completely covers the silicon chip or the copper pillar, and the molding resin is colored or opaque, it is challenging to detect the position / structure, etc. of the silicon chip or copper pillar covered by the molding resin layer from the outside using an optical detector.SUMMARY

[0005] Some example embodiments of the inventive concepts provide a grinding apparatus configured to grind a molding resin layer covering a substrate with relatively higher precision.

[0006] Example embodiments are not limited to the embodiments disclosed herein, and other embodiments of the inventive concepts will be clearly understood by those skilled in the art from the description below.

[0007] According to some example embodiments of the inventive concepts, a grinding apparatus includes a grinding unit configured to grind a molding resin layer of a workpiece, a measurement unit configured to measure a thickness of the molding resin layer, and a controller, wherein the controller is configured to control the measurement unit to measure the thickness of the molding resin layer, obtain thickness information of the molding resin layer from the measurement unit, determine grinding conditions, based on the thickness information of the molding resin layer, and control the grinding unit to perform a grinding process on the workpiece, the grinding process corresponding to the grinding conditions, and the workpiece includes a substrate and the molding resin layer covering the substrate, and the molding resin layer is colored or opaque.

[0008] According to some example embodiments of the inventive concepts, a grinding apparatus includes a measurement unit fixed to a first work and configured to measure a thickness of a molding resin layer of a workpiece, a grinding unit that is fixed to a second work different from the first work and configured to grind the molding resin layer, a transfer unit configured to transfer the workpiece between the first work and the second work, and a controller, wherein the controller is configured to control the measurement unit to measure a thickness of the molding resin layer, obtain thickness information of the molding resin layer from the measurement unit, determine grinding conditions, based on the thickness information of the molding resin layer, and control the transfer unit such that the workpiece is transferred to the grinding unit, and control the grinding unit to perform a grinding process on the molding resin layer, the grinding process corresponding to the grinding conditions.

[0009] According to some example embodiments of the inventive concepts, a grinding apparatus includes a grinding unit configured to grind a molding resin layer of a workpiece, a measurement unit configured to measure a thickness of the molding resin layer, wherein the measurement unit is fixed to a same work to which the grinding unit is fixed, and a controller, wherein the controller is configured to control the measurement unit to measure the thickness of the molding resin layer, obtain thickness information of the molding resin layer from the measurement unit, determine grinding conditions, based on the thickness information of the molding resin layer, and control the grinding unit to perform a grinding process on the workpiece, the grinding process corresponding to the grinding conditions, and the workpiece includes a substrate and the molding resin layer covering the substrate, and the molding resin layer is colored or opaque.BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Example embodiments will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings in which:

[0011] FIG. 1 is a cross-sectional view of a workpiece according to some example embodiments.

[0012] FIG. 2 is a plan view schematically illustrating a configuration of a grinding apparatus according to some example embodiments.

[0013] FIG. 3 is a side view schematically illustrating a configuration of a grinding apparatus according to some example embodiments.

[0014] FIG. 4 is a plan view schematically illustrating a configuration of a grinding apparatus according to some example embodiments.DETAILED DESCRIPTION

[0015] Hereinafter, example embodiments will be described in detail with reference to the attached drawings. In the drawings, like elements are labeled like reference numerals and repeated description thereof will be omitted. In addition, in the description of the drawings, the same symbols or reference numerals are assigned to the same elements and repeated descriptions are omitted for the sake of brevity. The dimension ratios in the drawings are exaggerated for convenience of description and may differ from the actual ratios.

[0016] Hereinafter, example embodiments will be described clearly and in detail to such an extent that a person skilled in the art may practice the inventive concepts.

[0017] When the terms “about” or “substantially” are used in this specification in connection with a numerical value, it is intended that the associated numerical value includes a manufacturing or operational tolerance (e.g., ±10%) around the stated numerical value. Moreover, when the words “about” and “substantially” are used in connection with geometric shapes, it is intended that precision of the geometric shape is not required but that latitude for the shape is within the scope of the disclosure. Further, regardless of whether numerical values or shapes are modified as “about” or “substantially,” it will be understood that these values and shapes should be construed as including a manufacturing or operational tolerance (e.g., ±10%) around the stated numerical values or shapes. When ranges are specified, the range includes all values therebetween such as increments of 0.1%.

[0018] As described herein, an element that is described to be “spaced apart” from another element, in general and / or in a particular direction (e.g., vertically spaced apart, laterally spaced apart, etc.) and / or described to be “separated from” the other element, may be understood to be isolated from direct contact with the other element, in general and / or in the particular direction (e.g., isolated from direct contact with the other element in a vertical direction, isolated from direct contact with the other element in a lateral or horizontal direction, etc.). Similarly, elements that are described to be “spaced apart” from each other, in general and / or in a particular direction (e.g., vertically spaced apart, laterally spaced apart, etc.) and / or are described to be “separated” from each other, may be understood to be isolated from direct contact with each other, in general and / or in the particular direction (e.g., isolated from direct contact with each other in a vertical direction, isolated from direct contact with each other in a lateral or horizontal direction, etc.). Similarly, a structure described herein to be between two other structures to separate the two other structures from each other may be understood to be configured to isolate the two other structures from direct contact with each other.

[0019] It will be understood that when an element such as a layer, film, region, or substrate is referred to as being “on” another element, it may be directly on the other element or intervening elements may also be present. In contrast, when an element is referred to as being “directly on” another element, there are no intervening elements present. It will further be understood that when an element is referred to as being “on” another element, it may be above or beneath or adjacent (e.g., horizontally adjacent) to the other element.

[0020] As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items. Expressions such as “at least one of,” when preceding a list of elements, modify the entire list of elements and do not modify the individual elements of the list. For example, “at least one of A, B, and C,” and similar language (e.g., “at least one selected from the group consisting of A, B, and C,”“at least one of A, B, or C”) may be construed as A only, B only, C only, or any combination of two or more of A, B, and C, such as, for instance, ABC, AB, BC, and AC.

[0021] First, referring to FIG. 1, a configuration of a workpiece 90 to be ground by a grinding unit 10 of a grinding apparatus 1 according to some example embodiments is described. In addition, the grinding apparatus 1 according to some example embodiments may be used in a semiconductor manufacturing process for processing a surface of a molding resin layer 92 using the grinding unit 10. The semiconductor manufacturing process may include a process of forming the molding resin layer 92 to cover and / or encapsulate a silicon chip 93 or a copper pillar 94 on a glass substrate 95 and then processing (e.g., polishing or grinding) the surface of the molding resin layer 92 by the grinding unit 10 to form wiring. However, the process in which the grinding apparatus 1 according to some example embodiments is used is not limited to the above-described example, and the grinding apparatus 1 may also be used in various other process technologies, as will be understood by one skilled in the art.

[0022] FIG. 1 is a cross-sectional view of the workpiece 90 according to some example embodiments.

[0023] The workpiece 90 may include a substrate 91 and the molding resin layer 92 covering the substrate 91, as illustrated in FIG. 1. The substrate 91 may include the silicon chip 93, the copper pillar 94, and the glass substrate 95, as illustrated in FIG. 1. The copper pillar 94 may be or include a terminal connecting the silicon chip 93 to a substrate for a semiconductor package. The substrate 91 may be, for example, a semiconductor substrate.

[0024] The silicon chip 93 and the copper pillar 94 may be arranged on an upper surface of the glass substrate 95 as illustrated in FIG. 1.

[0025] The molding resin layer 92 may be colored or opaque or translucent. A material forming the molding resin layer 92 may be or include a thermosetting resin such as epoxy resin or silicone resin, or a thermoplastic resin such as polyphenylene sulfide (PPS) resin, but is not limited thereto. In the example embodiments, “colored or opaque or translucent” is defined as “having a total light transmittance of 1 % or less in the visible light wavelength range of 360 nm to 830 nm under the condition that a thickness of the molding resin layer 92 is 60 μm or more,” when measured using one or more desired methods, for instance, using a method based on ““Testing method for total light transmittance of plastics-transparent materials” of JIS K 7361-1: 1997 (corresponding to ISO 13468-1: 1996).”

[0026] Next, the configuration of the grinding apparatus 1 according to some example embodiments is described with reference to FIGS. 2 and 3. FIG. 2 is a plan view schematically illustrating a configuration of the grinding apparatus 1 according to some example embodiments. FIG. 3 is a side view schematically illustrating a configuration of the grinding apparatus 1 according to some example embodiments.

[0027] According to some example embodiments, the grinding apparatus 1 may include the grinding unit 10 for grinding the molding resin layer 92 of the workpiece 90, a measurement unit 20 measuring a thickness of a remaining portion of the molding resin layer 92 (e.g., a portion of the molding resin layer 92 remaining after the grinding process, or, alternatively, the molding resin layer 92 remaining during the grinding process), and a controller 30 controlling the grinding unit 10, as illustrated in FIGS. 2 and 3. The grinding apparatus 1 according to some example embodiments may be used in a redistribution (RDL) process or a face-up process, or other similar processes.

[0028] According to some example embodiments, the grinding unit 10 and the measurement unit 20 may be fixed or arranged to the same work (or workstation) 80. The workpiece 90 that is being ground may also be fixed or arranged to the same work 80 as the grinding unit 10 and the measurement unit 20. As the measurement unit 20 may measure the thickness of the molding resin layer 92 in real time (or near real time) while the grinding unit 10 grinds the molding resin layer 92, the grinding time may be shortened and a relatively higher-precision grinding process may be performed.

[0029] The grinding unit 10 may perform a grinding process for grinding the molding resin layer 92 of the workpiece 90 including the substrate 91 and the molding resin layer 92. The grinding unit 10 may include a grinding disc (or grinding wheel) or similar tools. The grinding unit 10 may be arranged or installed or positioned on the workpiece 90. The grinding unit 10 may grind the molding resin layer 92 by rotating (indicated by arrow A in FIG. 2) while being in contact with the molding resin layer 92. Due to the rotating motion, the grinding unit 10 may remove or dislodge material from the upper surface of the molding resin layer 92. During the grinding process, the workpiece 90 may also be rotated, for example, in the opposite direction (indicated by arrow B in FIG. 2) of the grinding unit 10. However, in some example embodiments, the workpiece 90 may be stationary when the grinding unit 10 rotates. In some example embodiments, the workpiece 90 may be positioned or secured using a chuck (or similar device) of the work 80, and the chuck may rotate the workpiece 90.

[0030] In some example embodiments, when the grinding unit 10 grinds the molding resin layer 92, a supply portion 50 (for example, based on a control from the controller 30) may supply liquid to a grinding area of the molding resin layer 92. For example, the liquid may dissipate heat generated during the grinding process, or may reduce the dispersion of material of the molding resin layer 92 that is removed during the grinding process. Here, the grinding area (or an area that has been grounded) may refer to a portion of the surface area (e.g., an entire surface area) of the molding resin layer 92 in which the grinding process is performed (or has been performed) by the grinding unit 10. For example, the grinding area may be an area of the entire molding resin layer 92, which overlaps vertically with the grinding unit 10.

[0031] The measurement unit 20 measures the thickness of the molding resin layer 92. The measurement unit 20 is arranged or installed or positioned above the workpiece 90.

[0032] In some example embodiments, the measurement unit 20 measures the thickness of the molding resin layer 92 by using a terahertz pulse echo method or similar measurement methods. By using the terahertz pulse echo method, the thickness of the molding resin layer 92 that is colored or opaque or translucent may be appropriately measured. As the terahertz pulse echo method is a relatively known method, a detailed description thereof is omitted herein for the sake of brevity.

[0033] In some example embodiments, when the measurement unit 20 measures the thickness of the molding resin layer 92, a removal portion 60 (for example, based on a control from the controller 30) may remove liquid from a measuring area of the molding resin layer 92. Here, the measuring area may refer to a portion of the entire area of the molding resin layer 92 on which a measurement operation is performed by the measurement unit 20. For example, the measuring area may be a portion of the entire area of the molding resin layer 92 which vertically overlaps the measurement unit 20.

[0034] The removal portion 60 may include an air injection device. In this way, by installing the removal portion 60, liquid may be appropriately removed or dislodged from the measuring area of the molding resin layer 92, and a thickness of the measuring area of the molding resin layer 92 may be appropriately measured using the terahertz pulse echo method.

[0035] The controller 30 may determine grinding conditions and control the grinding unit 10, based on thickness information of the molding resin layer 92 measured by the measurement unit 20.

[0036] The controller 30 may be operatively connected to the measurement unit 20 and the grinding unit 10 and control the overall operations of the grinding apparatus 1. The controller 30 and the measurement unit 20 may be implemented in hardware, firmware, software, or any combination thereof. For example, the controller 30 may include a computing device such as a workstation computer, a desktop computer, a laptop computer, or a tablet computer. The controller 30 and the measurement unit 20 may include a complex processor such as a microprocessor, a central processing unit (CPU), a graphics processing unit (GPU), a processor configured by software, dedicated hardware, or firmware. The controller 30 and the measurement unit 20 may be

[0037] implemented by, for example, a general-purpose computer or application-specific hardware such as a Digital Signal Processor (DSP), a Field Programmable Gate Array (FPGA), and an Application Specific Integrated Circuit (ASIC). The controller 30 and the measurement unit 20 may be implemented as instructions stored on a machine-readable medium that may be read and executed by at least one processor. Here, a machine-readable medium may include any mechanism for storing and / or transmitting information in a form readable by a machine (e.g., a computing device). For example, the machine-readable medium may include read only memory (ROM), random access memory (RAM), magnetic disk storage media, optical storage media, flash memory devices, electrical, optical, acoustical, or other forms of radio signals (e.g., carrier waves, infrared signals, digital signals, etc.), and any other signals.

[0038] In some example embodiments, the controller 30 may determine, as a “final target thickness”, the thickness of the molding resin layer 92 at which an upper surface of the molding resin layer 92 is at the same vertical level as a vertical level of an upper surface of the silicon chip 93 and / or the copper pillar 94. In other words, when the molding resin layer 92 has the “final target thickness,” the upper surface of the molding resin layer 92 may be flush with the upper surface of the silicon chip 93 and / or the copper pillar 94. The final target thickness may be determined based on a vertical distance L (FIG. 1) of the molding resin layer 92 from the upper surface of the molding resin layer 92 to the upper surface of the silicon chip 93 and / or the copper pillar 94. For example, when a total thickness of the molding resin layer 92 is 1 mm and the vertical distance L is 100 μm, the final target thickness of the molding resin layer 92 may be 900 μm. However, this is only one example, and it may be understood by one skilled in the art that the controller 30 may determine the final target thickness of the molding resin layer 92 based on various other measurement methods. In the present specification, the term ‘level’ may mean a vertical height and / or a distance from a reference location (e.g., the upper surface of the silicon chip 93 and / or the copper pillar 94, or the like) in a vertical direction (e.g., a vertical direction in FIG. 3). A reference location may be understood to be a location that a level and / or relative level of an element is “based on” or is a level “from.” For example, when a first element is described herein to be at a level from a reference location that is higher than a second element, the first element may be further from the reference location in the vertical direction than the second element. In another example, when a first element is described herein to be at a level from a reference location that is lower than a second element, the first element may be closer to reference location in the vertical direction than the second element. In another example, when a first element is described herein to be at a same or substantially same level from a reference location as a second element, the first element may be equally distant from / close to the reference location in the vertical direction as the second element.

[0039] The controller 30 may control the grinding unit 10 to grind the molding resin layer 92 until the thickness of the molding resin layer 92 becomes the final target thickness. When the grinding unit 10 grinds the molding resin layer 92, the grinding unit 10 may be moved toward the molding resin layer 92, and / or a stage on which the molding resin layer 92 is arranged may be moved toward the grinding unit 10.

[0040] The controller 30 may include a receiving portion that receives thickness information of the molding resin layer 92 measured by the measurement unit 20, a calculating portion that calculates one or more grinding conditions, based on the thickness information received by the receiving portion, and a transmitting portion that transmits information about the grinding conditions calculated by the calculating portion, to the grinding unit 10 and / or the stage.

[0041] Hereinafter, a grinding method of the grinding apparatus 1 will be described.

[0042] First, a user of the grinding apparatus 1 may place the workpiece 90, the grinding unit 10, and the measurement unit 20 at predetermined or desired positions, for instance, in relation to each other. Then the controller 30 may control the measurement unit 20 to measure the vertical distance L of the molding resin layer 92 from the upper surface of the molding resin layer 92 to the upper surface of the silicon chip 93 and / or the copper pillar 94.

[0043] The controller 30 may receive the thickness information of the molding resin layer 92, measured by the measurement unit 20 from the measurement unit 20. The controller 30 may determine the grinding conditions based on the thickness information. According to some example embodiments, the controller 30 may receive the vertical distance L of the molding resin layer 92, measured by the measurement unit 20. and determine the grinding conditions based on information about the received vertical distance L. For example, when the vertical distance L is 1 mm, the grinding condition may be either “moving the grinding unit 10 toward the molding resin layer 92 by 1 mm” or “moving the stage on which the molding resin layer 92 is arranged by 1 mm toward the grinding unit 10.”

[0044] In some example embodiments, the grinding conditions may include target thickness value information set according to a processing time. A target thickness value may be determined according to the flow of time during which a grinding process is performed. For example, a first target thickness of the molding resin layer 92 corresponding to a first time may be 990 μm, and a second target thickness of the molding resin layer 92 corresponding to a second time may be 920 μm.

[0045] The controller 30 may transmit information about the determined grinding conditions to the grinding unit 10 or the stage, and control the grinding unit 10 to grind the molding resin layer 92 until the vertical distance L becomes 0 (or about 0). While performing the grinding of the molding resin layer 92 by the grinding unit 10, the measurement unit 20 may measure the thickness of the molding resin layer 92 and provide, as a feedback, a measurement result to the controller 30. The controller 30 may identify or calculate or otherwise determine whether the thickness of the molding resin layer 92 matches the target thickness based on a thickness measurement result, and the quality of the grinding conditions based on the identification or calculation result.

[0046] In determining the quality of the grinding conditions, the controller 30 may determine whether the grinding conditions are good (or acceptable or desirable) or bad (or unacceptable or undesirable). If the thickness of the molding resin layer 92 measured by the measurement unit 20 is the target thickness, the grinding conditions are identified as correct (or acceptable or desirable) conditions, and grinding of the molding resin layer 92 may be continued. In some example embodiments, while the grinding unit 10 performs a grinding process on a portion of an area of the molding resin layer 92, the measurement unit 20 may measure the thickness of one or more other portions of the another area of the molding resin layer 92, on which the grinding process by the grinding unit 10 has already been performed. If the thickness of the one or more other portions measured by the measurement unit 20 matches the desired target thickness or is within an acceptable tolerance of the desired target thickness, it may be identified that the predetermined grinding conditions are correct (or acceptable or desirable) conditions.

[0047] In the process of determining whether the grinding conditions are good (or acceptable or desirable) or bad (or unacceptable or undesirable), if the thickness of the molding resin layer 92, measured by the measurement unit 20, is not the target thickness, the grinding conditions may be determined to be not the correct (or unacceptable or undesirable) conditions and the grinding conditions may be determined again. Based on the above method, the grinding process may be performed with a relatively improved precision until the vertical distance L of the molding resin layer 92 from the upper surface of the molding resin layer 92 to the upper surface of the silicon chip 93 and / or the copper pillar 94 becomes 0 (or about 0).

[0048] As an example, the controller 30 may receive from the measurement unit 20 a measurement result indicating that the thickness of the molding resin layer 92 is measured as a first thickness (e.g., 990 μm) at a first time (e.g., 3 seconds after the grinding process has started). The controller 30 may identify whether the first thickness matches the first target thickness corresponding to the first time. When it is identified that the first thickness matches the first target thickness, the controller 30 may identify that the grinding conditions are good (or desirable or acceptable). Conversely, if the controller 30 identifies that the first thickness does not match the first target thickness, the controller 30 may identify that the grinding conditions are poor (or unacceptable or undesirable), and determine the grinding conditions again. In some example embodiments, the controller 30 may determine new grinding conditions based on a result of measuring the thickness of the molding resin layer 92 as measured by the measurement unit 20.

[0049] As described above, the grinding apparatus 1 according to some example embodiments may include the grinding unit 10 configured to grind the molding resin layer 92 in the workpiece 90 including the substrate 91 and the molding resin layer 92 covering or overlapping the substrate 91, the measurement unit 20 configured to measure the thickness of the molding resin layer 92, and the controller 30 configured to determine grinding conditions based on the thickness measured by the measurement unit 20 and control the grinding unit 10. The molding resin layer 92 may be colored or opaque or translucent. According to the grinding apparatus 1 described above, the thickness of the molding resin layer 92 may be measured by the measurement unit 20, and the measured thickness may be fed back as the grinding conditions to the grinding unit 10 and the measured thickness may be used to grind the molding resin layer 92. As a result, grinding of the molding resin layer 92 covering the substrate 91 may be performed with a relatively higher precision.

[0050] The controller 30 may be configured to perform multiple measuring and grinding processes to obtain a desired result, which, according to some example embodiment, includes exposing the copper pillar or the silicon chip from the molding resin layer. In some example embodiments, the controller 30 may be configured to control the measurement unit 20 and / or the grinding unit 10 to perform n measuring-grinding processes (n is a natural number greater than or equal to 2). The n measuring-grinding processes comprise processes in which the thickness of the molding resin layer is measured by the measurement unit 20 and processes in which the molding resin layer is ground by the grinding unit 10. The n measuring-grinding processes include processes for exposing the copper pillar 94 and / or the silicon chip 93 from the molding resin layer 92.

[0051] Next, a configuration of a grinding apparatus 2 according to some example embodiments is described with reference to FIG. 4.

[0052] FIG. 4 is a plan view schematically illustrating the configuration of the grinding apparatus 2 according to some example embodiments.

[0053] The grinding apparatus 2 may be different from the grinding apparatus 1 of FIGS. 2 and 3 in that the grinding unit 10 and the measurement unit 20 of FIGS. 2 and 3 are fixed to different works (or workstations). The grinding apparatus 2 may be same as or similar in some respects to the grinding apparatus 1 of FIGS. 2 and 3, and therefore may be best understood with reference thereto where like numerals indicate like elements not described again in detail.

[0054] The grinding apparatus 2 according to some example embodiments may include a first grinding unit 110, a second grinding unit 210, the measurement unit 20, and the controller 30, as illustrated in FIG. 4.

[0055] The first grinding unit 110, the second grinding unit 210, and the measurement unit 20 may be respectively fixed to different works (or workstations) as illustrated in FIG. 4. The grinding apparatus 2 may be arranged between different works and further include a transfer unit 70 for transferring the workpieces 90 between the different works.

[0056] The first grinding unit 110 may be a grinding apparatus for a relatively rough (or coarse) grinding. The second grinding unit 210 may be a grinding apparatus for a relatively fine grinding. The grinding apparatus 2 may include the two different grinding units 110, 210.

[0057] Next, the grinding method of the grinding apparatus 2 is described.

[0058] First, a user may arrange the workpiece 90 on a first work 181 on which the measurement unit 20 is arranged. The controller 30 may control the measurement unit 20 to measure the thickness of the molding resin layer 92 of the workpiece 90.

[0059] The controller 30 may receive the thickness information of the molding resin layer 92, measured by the measurement unit 20, and determine the grinding conditions based on the received thickness information. For example, the controller 30 may receive information about the vertical distance L measured by the measurement unit 20 and determine the grinding conditions based on the vertical distance L.

[0060] According to some example embodiments, the controller 30 may determine a first grinding thickness by the first grinding unit 110 and a second grinding thickness by the second grinding unit 210, based on the thickness information. In some example embodiments, when the vertical distance L of the molding resin layer 92 is 1 mm, the grinding conditions may be “the first grinding unit 110 grinding the molding resin layer 92 by 0.95 mm” and “the second grinding unit 210 grinding the molding resin layer 92 by 0.05 mm”. However, the grinding conditions determined by the controller 30 are not limited to the examples described above. In the grinding method, the grinding units 110, 210 and / or the stage are moved in a vertical direction in the same manner as the grinding apparatus 1, according to some example embodiments, described above.

[0061] The controller 30 may control the transfer unit 70 such that the workpiece 90 is transferred to a second work 183 on which the first grinding unit 110 is arranged. The controller 30 may control the first grinding unit 110 such that the molding resin layer 92 is ground to the first grinding thickness (e.g., 0.95 mm (or about 0.95 mm)).

[0062] The controller 30 may control the transfer unit 70 such that the workpiece 90 is transferred to the first work 181 on which the measurement unit 20 is arranged. The controller 30 may control the measurement unit 20 to measure the thickness of the molding resin layer 92. Here, whether a remaining vertical distance of the molding resin layer 92 (a distance obtained by subtracting the first grinding thickness ground by the first grinding unit 110, from the vertical distance L) matches the second grinding thickness (e.g., 0.05 mm). When the remaining vertical distance of the molding resin layer 92 is identified as matching the second grinding thickness, the controller 30 may control the transfer unit 70 such that the workpiece 90 is transferred to a third work 185 on which the second grinding unit 210 is arranged. The controller 30 may control the second grinding unit 210 such that the molding resin layer 92 is ground to the second grinding thickness (0.05 mm).

[0063] If it is identified that the remaining vertical distance of the molding resin layer 92 does not match the second grinding thickness (e.g., 0.05 mm), the controller 30 may control the transfer unit 70 such that the workpiece 90 is again transferred to the second work 183 on which the first grinding unit 110 is arranged.

[0064] Above, the configuration of the grinding apparatuses 1 and 2 has been described through example embodiments and modified examples, but the example embodiments of the inventive concepts are not limited to the above-described example embodiments and may be variously modified without departing from the spirit and scope of the disclosure.

[0065] For example, according to some example embodiments described above, the measurement unit 20 may measure the thickness of the molding resin layer 92 using the terahertz pulse echo method. However, in some example embodiments, the measurement unit 20 may measure the thickness of the molding resin layer 92 by using ultrasonic waves. When measuring using ultrasonic waves, it may be desirable for liquid to be in the measuring area of the molding resin layer 92, and thus the removal portion 60 that may be used to remove the liquid, as described above, may be omitted, and liquid may be supplied from the supply portion 50 during measurement.

[0066] According to some example embodiments, a method comprises measuring a thickness of a molding resin layer of a workpiece, the workpiece including a substrate and the molding resin layer on the substrate; determining at least one grinding condition based on the thickness of the molding resin layer; and performing, on the workpiece, a grinding process corresponding to the at least one grinding condition. According to some example embodiments, the method further comprises grinding a grinding area of the molding resin layer; measuring a thickness of a measuring area of the molding resin layer, the measuring area being horizontally spaced apart from the grinding area; and identifying, based on the thickness of the measuring area, a quality of the at least one grinding condition. According to some example embodiments, the method further comprises identifying, in response to the thickness of the measuring area being a target thickness, the at least one grinding condition as good; and performing the grinding process corresponding to the at least one grinding condition. According to some example embodiments, the method further comprises identifying, in response to the thickness of the measuring area not being a target thickness, the at least one grinding condition as poor; and re-determining the at least one grinding condition based on the thickness of the measuring area. According to some example embodiments, the method further comprises supplying liquid to a grinding area of the molding resin layer; and removing liquid from a measuring area of the molding resin layer, the grinding area and the measuring area being horizontally spaced apart from each other.

[0067] While several embodiments have been provided in the present disclosure, it should be understood that the disclosed systems and methods might be embodied in many other specific forms without departing from the spirit or scope of the present disclosure. The present examples are to be considered as illustrative and not restrictive, and the intention is not to be limited to the details given herein. For example, the various elements or components may be combined or integrated in another system or certain features may be omitted, or not implemented.

Claims

1. A grinding apparatus comprising:a grinding unit configured to grind a molding resin layer of a workpiece, the workpiece including a substrate and the molding resin layer on the substrate, and the molding resin layer being colored or opaque;a measurement unit configured to measure a thickness of the molding resin layer; anda controller configured to,control the measurement unit to measure the thickness of the molding resin layer;obtain thickness information of the molding resin layer from the measurement unit;determine at least one grinding condition based on the thickness information of the molding resin layer; andcontrol the grinding unit to perform a grinding process on the workpiece, the grinding process corresponding to the at least one grinding condition.

2. The grinding apparatus of claim 1, wherein the grinding unit and the measurement unit are on a same work.

3. The grinding apparatus of claim 1, wherein the controller is further configured to:control the grinding unit to grind a grinding area of the molding resin layer;control the measurement unit to measure a thickness of a measuring area of the molding resin layer; andidentify, based on the thickness of the measuring area, a quality of the at least one grinding condition,wherein the grinding area and the measuring area are horizontally spaced apart from each other.

4. The grinding apparatus of claim 3, wherein the controller is further configured to:identify, in response to the thickness of the measuring area being a target thickness, the at least one grinding condition as good; andcontrol the grinding unit to perform the grinding process corresponding to the at least one grinding condition.

5. The grinding apparatus of claim 3, wherein the controller is further configured to:identify, in response to the thickness of the measuring area not being a target thickness, the at least one grinding condition as poor; andre-determine the at least one grinding condition based on the thickness of the measuring area.

6. The grinding apparatus of claim 1, wherein the workpiece comprises a copper pillar or a silicon chip on the substrate, andthe controller is further configured to,control the measurement unit and the grinding unit to perform n measuring-grinding processes (n is a natural number greater than or equal to 2), whereinthe n measuring-grinding processes comprise processes in which the thickness of the molding resin layer is measured by the measurement unit and processes in which the molding resin layer is ground by the grinding unit, andthe n measuring-grinding processes comprise processes for exposing the copper pillar or the silicon chip from the molding resin layer.

7. The grinding apparatus of claim 1, wherein the workpiece comprises a copper pillar or a silicon chip on the substrate, andthe measurement unit measures the thickness of the molding resin layer based on a terahertz pulse echo method.

8. The grinding apparatus of claim 7, further comprising:a supply portion configured to supply liquid to a grinding area of the molding resin layer; anda removal portion configured to remove liquid from a measuring area of the molding resin layer,wherein the grinding area and the measuring area are horizontally spaced apart from each other.

9. The grinding apparatus of claim 8, wherein the controller is further configured to:control the supply portion to supply liquid to the grinding area; andcontrol the removal portion to remove liquid from the measuring area.

10. The grinding apparatus of claim 1, wherein the workpiece comprises a copper pillar or a silicon chip on the substrate, andthe measurement unit is configured to measure the thickness of the molding resin layer using ultrasonic waves.

11. A grinding apparatus comprising:a measurement unit on a first work and configured to measure a thickness of a molding resin layer of a workpiece;at least one grinding unit on a second work different from the first work and configured to grind the molding resin layer;a transfer unit configured to transfer the workpiece between the first work and the second work; anda controller configured to,control the measurement unit to measure a thickness of the molding resin layer;obtain thickness information of the molding resin layer from the measurement unit;determine grinding conditions based on the thickness information of the molding resin layer;control the transfer unit to transfer the workpiece to the at least one grinding unit; andcontrol the at least one grinding unit to perform a grinding process on the molding resin layer, the grinding process corresponding to the grinding conditions.

12. The grinding apparatus of claim 11, wherein the second work comprises a first grinding work and a second grinding work different from the first grinding work, andthe at least one grinding unit includes,a first grinding unit on the first grinding work and configured to perform rough grinding; anda second grinding unit on the second grinding work and configured to perform fine grinding.

13. The grinding apparatus of claim 12, wherein the controller is further configured to determine, based on the thickness information, a first grinding thickness and a second grinding thickness, and whereinthe first grinding thickness is a thickness of the molding resin layer to be ground by the rough grinding of the first grinding unit, andthe second grinding thickness is a thickness of the molding resin layer to be ground by the fine grinding of the second grinding unit.

14. The grinding apparatus of claim 13, wherein the controller is further configured to:control the first grinding unit to grind the molding resin layer;control the transfer unit to transfer the workpiece to the measurement unit;control the measurement unit to identify whether the molding resin layer has been ground to the first grinding thickness;in response to the molding resin layer being ground to the first grinding thickness, control the transfer unit to transfer the workpiece to the second grinding unit; andin response to the molding resin layer not being ground to the first grinding thickness, control the transfer unit to transfer the workpiece to the first grinding unit.

15. The grinding apparatus of claim 11, wherein the workpiece comprises a copper pillar or a silicon chip on a substrate, andthe measurement unit is configured to measure the thickness of the molding resin layer based on a terahertz pulse echo method.

16. The grinding apparatus of claim 15, further comprising a removal portion configured to remove liquid from an upper surface of the molding resin layer,wherein the controller is further configured to control the removal portion to remove liquid from the upper surface of the molding resin layer.

17. The grinding apparatus of claim 11, wherein the workpiece comprises a copper pillar or a silicon chip on a substrate, andthe measurement unit is configured to measure the thickness of the molding resin layer using ultrasonic waves.

18. A grinding apparatus comprising:a grinding unit configured to grind a molding resin layer of a workpiece, the workpiece including a substrate and the molding resin layer on the substrate, and the molding resin layer being colored or opaque;a measurement unit configured to measure a thickness of the molding resin layer, the measurement unit and the grinding unit being on a same work; anda controller configured to,control the measurement unit to measure the thickness of the molding resin layer;obtain thickness information of the molding resin layer from the measurement unit;determine grinding conditions based on the thickness information of the molding resin layer; andcontrol the grinding unit to perform a grinding process on the workpiece, the grinding process corresponding to the grinding conditions.

19. The grinding apparatus of claim 18, wherein the grinding conditions comprise a target thickness value set according to a processing time, andthe controller is further configured to,control the grinding unit to perform a grinding operation on the molding resin layer;control the measurement unit to perform a measurement operation on the molding resin layer;identify, based on a result of the measurement operation and the processing time, whether the thickness of the molding resin layer corresponds to the target thickness value; andre-determine the grinding conditions in response to the thickness of the molding resin layer not corresponding to the target thickness value.

20. The grinding apparatus of claim 19, wherein in response to the grinding conditions being re-determined, the controller is further configured to control the grinding unit to perform the grinding process corresponding to the re-determined grinding conditions on the molding resin layer.

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