Power semiconductor device
Patent Information
- Authority / Receiving Office
- US · United States
- Patent Type
- Designs(United States)
- Current Assignee / Owner
- MITSUBISHI ELECTRIC CORP
- Filing Date
- 2023-08-02
- Publication Date
- 2026-05-26
Smart Images

Figure USD1127747-D00000_ABST
Description
[0001] FIG. 1 is a front, top, right side perspective view of a power semiconductor device showing our new design;
[0002] FIG. 2 is a front, bottom, left side perspective view thereof;
[0003] FIG. 3 is a front view thereof;
[0004] FIG. 4 is a rear view thereof;
[0005] FIG. 5 is a top view thereof;
[0006] FIG. 6 is a bottom view thereof;
[0007] FIG. 7 is a left side view thereof;
[0008] FIG. 8 is a right side view thereof; and,
[0009] FIG. 9 is an enlarged partial end view taken from line 9-9 in FIG. 5.
[0010] The broken lines in the drawings are for the purpose of illustrating portions of the power semiconductor device that form no part of the claimed design.
[0011] The dot-dot-dashed lines define the boundary lines and form no part of the claimed design.
Claims
The ornamental design for a power semiconductor device as shown and described.