LIGHT-Emitting diode integrated circuit
VN10059314BActive Publication Date: 2026-07-15SEOUL VIOSYS CO LTD
View PDF 0 Cites 0 Cited by
Patent Information
- Application Number
- VN1202001114
- Authority / Receiving Office
- VN · VN
- Patent Type
- Patents
- Current Assignee / Owner
- Filing Date
- 2018-09-14
- Publication Date
- 2026-07-15
- Estimated Expiration
- 2038-09-14
Abstract
The invention relates to a light-emitting diode integrated circuit with a high refractive index of light. Because the light-emitting diode circuit, according to a design scheme, includes: a base; a conductive layer of the highest power grade arranged around the substrate; The top plate consists of an active layer and a second-type semiconductor layer. The top plate is arranged on a region of the first-type semiconductor layer to create the top surface of the first-type semiconductor layer along the edge of the first-type semiconductor layer; the adjacent layer(s) cover the side surface of the top plate; and the reflective structure is placed at a distance from the adjacent coating(s) and is superimposed on the first type of semiconductor material that is exposed.
Need to check novelty before this filing date? Find Prior Art