Thin-film tranzitos and methods for manufacturing thin-film tranzitos, plate substrate, and display devices

VN10059745BActive Publication Date: 2026-08-03BOE TECHNOLOGY GROUP CO LTD
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Patent Information

Application Number
VN1202207871
Authority / Receiving Office
VN · VN
Patent Type
Patents
Current Assignee / Owner
Filing Date
2021-01-28
Publication Date
2026-08-03
Estimated Expiration
2041-01-28
Patent Text Reader

Abstract

The invention is in the field of display technology and relates to a waveform transistor, a method for producing waveform transistors, a display circuit and a display device. The active layer of the waveform transistor consists of at least two stacked layers of metal oxide semiconductors; at least two layers of these oxide semiconductors consist of a channel layer and a first shield layer; the metal in the metal oxide semiconductor layer in the channel layer consists of the element tin, and at least one of the elements indium, gallium and zinc. This first protective layer contains praseodymium, and the (O) praseodymium element in the first protective layer is used to absorb photogenerated electrons in the metal oxide substrate and reduce the photogenerated current generated by illumination. This thin-film transistor has high adhesion and high mobility of the charge carriers.
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