A programmable memory module circuit and the method for operating this circuit.

Abstract

The invention relates to an OTP (one-time programmable) memory circuit comprising a read access switch coupled with a fuse in the read current path to allow the read current to flow through the fuse during read operation. The read access switch, which can be switched off during write operation, is sized according to the read current to reduce leakage current which could cause unreliable results. The diode circuit is coupled to the middle button between the read access switch and the current supply path through a fuse, distinct from the read current path in the OTP memory circuit. The diode circuit is configured to control the current flow, including the fuse, ensuring sufficient current to blow the fuse during write operation. The diode circuit occupies a smaller area compared to the access-write transistor with equivalent control current in the OTP memory circuit. The invention also relates to a method of operating a one-time programmable memory circuit.