Methods for manufacturing photoelectric devices and methods for manufacturing the absorption layer of photoelectric devices

Abstract

According to the methods described herein, the invention relates to a method for constructing a photoelectric device which may include a multilayer semiconductor deposition step. The multilayer semiconductor may include a doped layer doped with a V-group dopant. The doped layer may include cadmium selenide or cadmium tellurite. The method may include an annealing step for the multilayer semiconductor to form an absorbent layer. The invention also relates to a photoelectric device.