Oxide semiconductor display devices

Abstract

The display device may consist of at least one single-phase thin-film transistor and a transport thin-film transistor, which are mounted on the instrument substrate. The transport thin-film transistor may consist of a transport semiconductor sample made of semiconductor oxide. A photodetector may be positioned between the instrument substrate and the transport semiconductor sample. The photodetector may be positioned close to the transport semiconductor sample. Therefore... In display devices, the variation of current with voltage applied to the operating electrode of a thin-film transistor can be reduced without changing the characteristics of the switching thin-film transistor. Therefore, in display devices, the appearance of low-grayscale dots can be prevented.