METAL OXIDE SEMICONDUCTOR INTEGRATED CIRCUIT

Abstract

The invention relates to a metal oxide semiconductor integrated circuit (IC) comprising a first circuit consisting of several first nMOS components, a first p-tap cell, and a first nMOS cell, and a second circuit consisting of several first pMOS components, a first pMOS cell, and a first n-tap cell. The nMOS / pMOS components are spaced apart in the first direction. The first p-tap cell and the first nMOS cell are adjacent in the first direction between the nMOS components. The first pMOS cell and the first n-tap cell are adjacent in the first direction between the pMOS components. The pMOS components are adjacent to the nMOS components in the second direction orthogonal to the first direction; the first p-tap cell / first pseudo-pMOS cell and the first pseudo-nMOS cell are respectively adjacent to each other in the second direction.