VERTICAL LIGHT-EMITTING DIODES

Abstract

The invention relates to a light-emitting diode, according to a preferred design such that this diode comprises: a first-grade semiconductor layer; an insulating layer positioned above the first-grade semiconductor layer; a flat top, which comprises the active layer and the second-grade semiconductor layer, positioned below such a region of the first-grade semiconductor layer so as to expose the edge of the first-grade semiconductor layer, and comprising first and second through-holes through which the first-grade semiconductor layer is exposed; a first electrode comprising first contacts electrically connected to the first-grade semiconductor layer through the first through-holes and second contacts electrically connected to the first-grade semiconductor layer through the second through-holes; The second electrode is connected to a second-conducting plate;and at least one electrode support above is floated with the second test electrode, in which the first through-holes are arranged in the region surrounded by the edge of the finial, the second through-holes are arranged along the edge of the finial so that some of the second through-holes are surrounded by the active layer and the second type of semiconductor, respectively, and the insulating layer above consists of multiple layers of metal.