INTEGRATED CIRCUITS, COMPENSATING METAL OXIDE SEMICONDUCTOR CIRCUITS, AND CIRCUIT FABRICATION METHODS

Abstract

This paper discusses the circuit design, the complementary metal oxide semiconductor circuit, and the circuit fabrication method. The circuit utilizes a back-to-front interface structure to link back-to-front routing with front-to-front routing, a complementary metal oxide semiconductor (CMOS) circuit, and the correlation method. The circuit includes a front-to-front metal path arranged adjacent to the front of the semiconductor device to provide front-to-front signal routing. It also includes a back-to-back metal path arranged adjacent to the back of the semiconductor device to provide back-to-back signal routing. Therefore, the back-to-front area of ​​the semiconductor device can be used for signal routing to save space and / or reduce routing complexity. This circuit also includes a back-to-front connection structure that links the front metal wire to the back metal wire to support signal routing from the back to the front of the circuit, or vice versa, for more flexible routing.