Thin-film transistors have a barrier layer, and display devices incorporate these thin-film transistors.
VN125971APending Publication Date: 2026-06-15LG DISPLAY CO LTD
0 Cites 0 Cited by
Patent Information
- Authority / Receiving Office
- VN · VN
- Patent Type
- Applications
- Current Assignee / Owner
- LG DISPLAY CO LTD
- Filing Date
- 2025-11-28
- Publication Date
- 2026-06-15
Smart Images

Figure VN1202509288_0
Abstract
The invention relates to a thin-film transistor and a display device comprising such a thin-film transistor and a method for producing such a thin-film transistor. The proposed thin-film transistor, which comprises an active layer, a gate isolation layer on the active layer, a gate electrode on the gate isolation layer, and a first barrier layer on the gate isolation layer, wherein the gate electrode and the first barrier layer are arranged to be positioned apart from each other, a portion of the active layer overlaps with the gate electrode to form the channel portion in the active layer, and the first barrier layer overlaps with another portion of the active layer.
Need to check novelty before this filing date? Find Prior Art