Thin-film transistors have a barrier layer, and display devices incorporate these thin-film transistors.

VN125971APending Publication Date: 2026-06-15LG DISPLAY CO LTD
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Patent Information

Authority / Receiving Office
VN · VN
Patent Type
Applications
Current Assignee / Owner
LG DISPLAY CO LTD
Filing Date
2025-11-28
Publication Date
2026-06-15

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Abstract

The invention relates to a thin-film transistor and a display device comprising such a thin-film transistor and a method for producing such a thin-film transistor. The proposed thin-film transistor, which comprises an active layer, a gate isolation layer on the active layer, a gate electrode on the gate isolation layer, and a first barrier layer on the gate isolation layer, wherein the gate electrode and the first barrier layer are arranged to be positioned apart from each other, a portion of the active layer overlaps with the gate electrode to form the channel portion in the active layer, and the first barrier layer overlaps with another portion of the active layer.
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