CHEMICAL VAPOR FOG SEDIMENTATION EQUIPMENT COMBINED WITH ACTIVATED PLASMA (PEM-CVD) FOR SEMICONDUCTOR THIN FILM FABRICATION AND METHOD FOR SEMICONDUCTOR THIN FILM FABRICATION USING THIS EQUIPMENT

Abstract

The invention relates to a plasma-activated vapor deposition (PEM-CVD) apparatus for the fabrication of semiconductor thin films and a method for fabricating semiconductor thin films using this apparatus. The apparatus comprises: a carrier gas and vapor generator, a gas mixing chamber with a rectifier, a plasma medium generator, a quartz reaction chamber, an electric resistance heater, and an exhaust gas treatment unit. During operation, the precursor solution is converted into a precursor mist by an ultrasonic vibrator, which is then transported by the carrier gas through the gas mixing chamber with a rectifier to create a flat rectangular gas stream. The carrier gas stream containing the precursor mist then passes through the plasma region of the plasma medium generator, where plasma is generated by a high-voltage, high-frequency AC source to activate the precursor molecules before entering the quartz reaction chamber containing a substrate heated by the electric resistance heater.Chemical reactions occur in the gas phase and / or on the substrate surface to form semiconductor thin films, while the reaction exhaust gas is directed to an exhaust gas treatment unit before being released into the environment. The device and method described in the invention allow for an increase in the density of precursors in the deposition zone, thereby increasing the deposition rate, improving the uniformity and crystal quality of the thin film, and reducing the reaction temperature, energy consumption, and operating costs compared to chemical vapor deposition without activated plasma. The invention has potential applications in the fabrication of semiconductor thin films and functional materials for the semiconductor, microelectronics, energy, and advanced materials fields.