PROCESS FOR FABRICATION OF CdSxSe1-x / ZnS CORE / SHELL QUANTUM DOTS BY ONE-POT ISOTHERMAL METHOD
VN126748APending Publication Date: 2026-07-01PHENIKAA UNIV
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Patent Information
- Authority / Receiving Office
- VN · VN
- Patent Type
- Applications
- Current Assignee / Owner
- PHENIKAA UNIV
- Filing Date
- 2026-05-28
- Publication Date
- 2026-07-01
Abstract
The invention relates to a process for fabricating core / shell CdSxSe1-x / ZnS alloy quantum dots (0xSe1-x) formed from the reaction of a cadmium precursor with a mixture of sulfur and selenium in a medium containing tri(n-octyl)phosphine (TOP) and hexadecylamine (HDA). The ZnS shell is grown directly in the same reaction system by injecting a monomolecular precursor Zn(S2CNEt2)2 dissolved in 1-octadecene (1-ODE), where this precursor simultaneously provides Zn2+ and S2- ions for shell formation. The one-pot isothermal method allows for the continuous formation of the core / shell structure in the same reaction vessel without intermediate purification or changes in reaction temperature.
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