SELF-SUPPLIED ULTRAVIOLET SENSOR COMPONENT BASED ON HETEROSCOPIC JUNCTION OF Ga2O3:Si / P-GaN AND FABRICATION PROCESS USING LASER PULSE DEPOSITION METHOD

Abstract

The invention relates to a self-powered ultraviolet sensor and a fabrication process based on a beta Ga2O3:Si / p-GaN heterojunction. The component structure consists of a thin Ga2O3 film doped with 0.1 wt% silicon placed on a p-GaN layer (500 nm) and a sapphire substrate. The core is a process using PLD at 400°C, controlling the oxygen pressure at an optimal level of 5 mTorr and annealing at 800°C. The electrode system consists of two layers: Ti / Au (30 / 70 nm) on Ga2O3:Si and Au (100 nm) on p-GaN. The component operates self-powered by an internal electric field, achieving a maximum current of 0.6 nA, a sensitivity of 2.44 x 10⁻² A / W at 270 nm, and a detection rate of 2.45 x 10¹¹ cmHz⁻² / ²W. The patent focuses on heterojunction structures with specific technical parameters and oxygen pressure control procedures in laser deposition.