Semiconductor structure and method for forming a semiconductor structure
WO2024260670A1PCT designated stage expired Publication Date: 2024-12-26IQE
Patent Information
- Application Number
- PCT/EP2024/064134
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2023-06-22
- Filing Date
- 2024-05-22
- Publication Date
- 2024-12-26
Smart Images
Figure EP2024064134_26122024_PF_FP_ABST
Abstract
The present disclosure relates to a semiconductor structure that comprises: a substrate comprising Si with a (100) crystal orientation; a first transition layer comprising a rare earth oxide over the substrate, wherein the first transition layer comprises a (111) crystal orientation; a first semiconductor layer comprising a first III-N semiconductor material over the first transition layer; and an active region over the first semiconductor layer comprising quantum dots, wherein the quantum dots comprise a second III-N semiconductor material.
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Citation Information
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