LED display device and manufacturing method for LED display device

Abstract

Disclosed in the present application are an LED display device and a manufacturing method for an LED display device. The LED display device comprises a driving substrate, a first light-emitting assembly and a second light-emitting assembly, wherein the driving substrate comprises a plurality of first pixel power supply electrodes and a plurality of second pixel power supply electrodes; the first light-emitting assembly comprises a first light-emitting layer group, a first pixel defining electrode and a second pixel defining electrode, the first pixel defining electrode cooperating with the first light-emitting layer group and the second pixel defining electrode to form a first pixel; and the second light-emitting assembly comprises a second light-emitting layer group, a third pixel defining electrode and a fourth pixel defining electrode, the third pixel defining electrode cooperating with the second light-emitting layer group and the fourth pixel defining electrode to form a second pixel, and the second pixel being staggered from the first pixel in the stacking direction of the first light-emitting assembly and the second light-emitting assembly. By means of said configurations, the present application can reduce the preparation difficulty of LED chips, and improve the yield of finished LED chips.

Description

LED display device and method for manufacturing LED display device

[0001] This application claims priority to Chinese patent application No. 2023108901096, filed on July 12, 2023, entitled “LED display device and method for manufacturing LED display device,” the entire contents of which are incorporated herein by reference.

Technical field

[0002] The present application relates to display technology, and in particular to an LED display device and a method for manufacturing the LED display device. [Background Technology]

[0003] An LED (Light Emitting Diode) is a solid-state semiconductor device that converts electrical energy into visible light. When current flows through a wire and acts on the LED semiconductor chip, electrons and holes within the chip recombine, emitting energy in the form of photons, thus generating light.

[0004] An LED chip typically has multiple pixels, and LED arrays with high-density pixel integration enable precise control of the LED chip's display effects. Currently, however, multiple pixels are typically set using etching, a process that is not only difficult to prepare but also prone to damage. Consequently, the yield rate of finished LED chips is currently low. Furthermore, to achieve colorization, multiple colors of LEDs must be stacked and repeatedly etched after etching to form pixels, further increasing the difficulty and complexity of the process, making it difficult to achieve high-yield, low-cost mass production of color-enhanced LED display chips.

[0005] [Summary of the invention]

[0006] The embodiments of the present application provide an LED display device and a method for manufacturing the LED display device, which can reduce the difficulty of preparing LED chips and improve the finished product yield of LED chips.

[0007] In order to solve the above technical problems, a technical solution adopted in this application is to provide an LED display device, which includes a driving substrate, a first light-emitting component and a second light-emitting component;

[0008] The driving substrate includes a plurality of first pixel power supply electrodes and a plurality of second pixel power supply electrodes;

[0009] The first light-emitting component includes a first light-emitting layer group, a plurality of first pixel-defining electrodes, at least one second pixel-defining electrode, and a plurality of first pixel switching electrodes, wherein the first pixel-defining electrode and the second pixel-defining electrode are located on both sides of the first light-emitting layer group, the first pixel-defining electrode is located on a side of the first light-emitting layer group facing the drive substrate, and cooperates with the first light-emitting layer group and the second pixel-defining electrode to form a first pixel, wherein the first pixel-defining electrodes are respectively conductively connected to corresponding first pixel power supply electrodes, and the first pixel switching electrode passes through the first light-emitting layer group;

[0010] The second light-emitting component is stacked on the side of the first light-emitting component away from the driving substrate, and includes a second light-emitting layer group and a plurality of third pixel-defining electrodes and at least one fourth pixel-defining electrode located on both sides of the second light-emitting layer group. The third pixel-defining electrode is located on the side of the second light-emitting layer group facing the first light-emitting component, and cooperates with the second light-emitting layer group and the fourth pixel-defining electrode to form a second pixel. The projection of the second pixel in the stacking direction of the first light-emitting component and the second light-emitting component is staggered with the first pixel. The third pixel-defining electrode is conductively connected to the corresponding second pixel power supply electrode via the corresponding first pixel switching electrode.

[0011] To solve the above technical problems, another technical solution adopted in this application is to provide a method for manufacturing an LED display device, the method comprising:

[0012] A driving substrate is provided, wherein the driving substrate comprises a plurality of first pixel power supply electrodes and a plurality of second pixel power supply electrodes;

[0013] A first light-emitting component is stacked on a driving substrate, wherein the first light-emitting component includes a first light-emitting layer group, a plurality of first pixel-defining electrodes, at least one second pixel-defining electrode, and a first pixel switching electrode. The first pixel-defining electrode and the second pixel-defining electrode are located on either side of the first light-emitting layer group. The first pixel-defining electrode is located on a side of the first light-emitting layer group facing the driving substrate and cooperates with the first light-emitting layer group and the second pixel-defining electrode to form a first pixel. The first pixel-defining electrodes are respectively conductively connected to corresponding first pixel power supply electrodes, and the first pixel switching electrode passes through the first light-emitting layer group.

[0014] The second light-emitting component is stacked on the side of the first light-emitting component away from the driving substrate, wherein the second light-emitting component includes a second light-emitting layer group and a plurality of third pixel-defining electrodes and at least one fourth pixel-defining electrode located on both sides of the second light-emitting layer group. The third pixel-defining electrode is located on the side of the second light-emitting layer group facing the first light-emitting component, and cooperates with the second light-emitting layer group and the fourth pixel-defining electrode to form a second pixel. The projection of the second pixel in the stacking direction of the first light-emitting component and the second light-emitting component is staggered with the first pixel. The third pixel-defining electrode is conductively connected to the corresponding second pixel power supply electrode via the first pixel switching electrode.

[0015] The beneficial effects of the present application are: different from the prior art, the present application stacks multiple layers of first light-emitting components and second light-emitting components on a driving substrate to set the first pixel and the second pixel on different planes, thereby reducing the difficulty of preparing a high-density pixel point integrated array in the same plane, thereby ensuring the display pixel point density of the LED display device while reducing the difficulty of preparing the LED display device, and at the same time reducing the occurrence of excessive etching in the same plane component to damage the LED display device, thereby improving the finished product yield of the LED chip.

Brief Description of the Drawings

[0016] FIG1 is a schematic structural diagram of an embodiment of an LED display device of the present application;

[0017] FIG2 is an enlarged schematic diagram of a local area O of the LED display device shown in FIG1 ;

[0018] FIG3 is an enlarged schematic diagram of a local area P of the LED display device shown in FIG1 ;

[0019] FIG4 is a schematic diagram of the structure of some components of an embodiment of an LED display device of the present application;

[0020] FIG5 is a schematic structural diagram of another embodiment of the LED display device of the present application;

[0021] FIG6 is an enlarged schematic diagram of a local area Q of the LED display device shown in FIG4 ;

[0022] FIG7 is a schematic diagram of a preparation process of a method for manufacturing an LED display device according to an embodiment of the present application;

[0023] FIG8 is a schematic diagram of another preparation process of a method for manufacturing an LED display device according to an embodiment of the present application;

[0024] FIG9 is another schematic diagram of a manufacturing process of an embodiment of an LED display device of the present application;

[0025] FIG10 is a schematic diagram of a preparation process of the LED display device shown in FIG1 ;

[0026] FIG11 is a schematic diagram of another preparation process of the LED display device shown in FIG1 ;

[0027] FIG12 is a schematic diagram of another preparation process of the LED display device shown in FIG1;

[0028] FIG13 is a schematic diagram of another preparation process of the LED display device shown in FIG1 ;

[0029] FIG14 is a schematic diagram of another preparation process of the LED display device shown in FIG1 ;

[0030] FIG15 is a schematic structural diagram of another embodiment of the LED display device of the present application;

[0031] FIG16 is a schematic diagram of a preparation process of the LED display device shown in FIG4 ;

[0032] FIG17 is a schematic diagram of another preparation process of the LED display device shown in FIG4;

[0033] FIG18 is a schematic diagram of another preparation process of the LED display device shown in FIG4;

[0034] FIG19 is a schematic diagram of another preparation process of the LED display device shown in FIG4 . [Specific implementation method]

[0035] The following will be combined with the drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the embodiments described are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0036] The inventors of this application have discovered through research that an LED chip usually has multiple pixels, and an LED array with high-density pixel integration can achieve precise control of the display effect of the LED chip. Currently, the way to set pixels is by etching, but the process of etching the LED chip is not only difficult to prepare, but also easy to damage the LED chip, resulting in a low yield rate of finished products of the current LED chip. In addition, in order to achieve colorization, on the basis of etching to form pixels, multiple colors of LEDs are stacked and repeatedly etched, which increases the difficulty and complexity of the process, making it difficult to achieve mass production of high-yield, low-cost, colored LED display chips. To this end, this application proposes the following embodiments of LED display devices.

[0037] The following LED display device embodiments of the present application describe exemplary structures of LED display devices.

[0038] The LED display device 1 is a device that generates light by forming multiple display pixels internally. The generated light can be emitted from one side of the LED display device 1 to illuminate or display various information such as text, images, and videos. For example, the LED display device 1 can be a device such as an LED digital car light chip, a digital light strip chip, or an LED display screen chip.

[0039] As shown in FIG. 1 , the LED display device 1 may include a driving substrate 100 , a first light emitting assembly 200 , and a second light emitting assembly 300 .

[0040] The drive substrate 100 is electrically connected to the first light-emitting component 200 and the second light-emitting component 300. The drive substrate 100 is used to provide driving current to the first light-emitting component 200 and the second light-emitting component 300. The first light-emitting component 200 and the second light-emitting component 300 are used to receive the driving current from the drive substrate 100 and realize the display light-emitting function. Optionally, the drive substrate 100 and the first light-emitting component 200 and the second light-emitting component 300 can be stacked in sequence. The stacking direction can be shown as the arrow in Figure 1.

[0041] In some embodiments, the first light-emitting component 200 can be fixed on the driving substrate 100 by metal bonding or hybrid bonding, and the second light-emitting component 300 can also be fixed on the side of the first light-emitting component 200 away from the driving substrate 100 by metal bonding or hybrid bonding.

[0042] Optionally, the parts where the first light-emitting component 200 and the second light-emitting component 300 are in contact with the driving substrate 100 can be made of metal material, so that the metal atoms of the first light-emitting component 200 and the metal atoms of the second light-emitting component 300 are respectively combined with the metal atoms of the driving substrate 100, thereby realizing metal bonding between metals. The metal bonding connection can facilitate good electrical and thermal conductivity between the first light-emitting component 200, the second light-emitting component 300 and the driving substrate 100.

[0043] Hybrid bonding, on the other hand, involves bonding dielectric layers in some areas and metals in others, creating a permanent interconnected bond. This hybrid bonding not only enables face-to-face bonding of wafers, but also increases bond strength, density, and reliability. Hybrid bonding facilitates face-to-face connection and bonding of the first light-emitting assembly 200 and the second light-emitting assembly 300 to the driver substrate 100.

[0044] Of course, in other embodiments, other bonding methods may be used to bond the first light-emitting component 200 , the second light-emitting component 300 and the driving substrate 100 , which is not specifically limited in this embodiment.

[0045] Furthermore, the driving substrate 100 may include a plurality of first pixel power supply electrodes 110 and a plurality of second pixel power supply electrodes 120. The plurality of first pixel power supply electrodes 110 may correspond to and be connected to the first light-emitting component 200 to transmit a driving current to the first light-emitting component 200. The plurality of second pixel power supply electrodes 120 may correspond to and be connected to the second light-emitting component 300 to transmit a driving current to the second light-emitting component 300.

[0046] Optionally, the drive substrate 100 may include a plurality of switching devices (not shown) arranged in an array, wherein the plurality of switching devices correspond one-to-one to and are conductively connected to the plurality of first pixel power supply electrodes 110 and the plurality of second pixel power supply electrodes 120. By providing conductive connections between the switching devices and the first pixel power supply electrodes 110 and the second pixel power supply electrodes 120, individual control of the display pixels in the LED display device 1 can be further achieved.

[0047] Furthermore, the first light-emitting component 200 may include a first light-emitting layer group 210 , a plurality of first pixel-defining electrodes 220 , at least one second pixel-defining electrode 230 , and a plurality of first pixel switching electrodes 240 .

[0048] The first pixel-defining electrode 220 and the second pixel-defining electrode 230 can be located on either side of the first light-emitting layer group 210. The first pixel-defining electrode 220 is located on the side of the first light-emitting layer group 210 facing the drive substrate 100 and cooperates with the first light-emitting layer group 210 and the second pixel-defining electrode 230 to form a first pixel. The first pixel-defining electrode 220 can be electrically connected to the corresponding first pixel power supply electrode 110, and the first pixel switching electrode 240 can extend through the first light-emitting layer group 210.

[0049] Specifically, the first light-emitting layer group 210 can be an epitaxial layer capable of recombination of electrons and holes under the support of a driving current, thereby generating light. The first light-emitting layer group 210 can include a P-type semiconductor and an N-type semiconductor, and the first pixel-defining electrode 220 and the second pixel-defining electrode 230 can serve as the P and N electrodes of the first pixel, respectively. The first pixel-defining electrode 220 and the second pixel-defining electrode 230 can form ohmic contacts with the first light-emitting layer group 210 on both sides thereof, thereby supplying current to the P-type and N-type semiconductors of the first light-emitting layer group 210. Thus, through the interaction of the first pixel-defining electrode 220, the second pixel-defining electrode 230, and the first light-emitting layer group 210, the first light-emitting layer group 210 can display multiple first pixels.

[0050] Multiple first pixel defining electrodes 220 can be arranged in an array on the side of the first light-emitting layer group 210 facing the driving substrate 100 according to the required positions of the first pixels, and the positions of the multiple first pixel power supply electrodes 110 correspond one-to-one to the positions of the multiple first pixel defining electrodes 220, so that the first light-emitting layer group 210 can receive the driving current transmitted by the first pixel defining electrodes 220 at the positions corresponding to the multiple first pixel defining electrodes 220, thereby allowing the first light-emitting layer group 210 to display multiple first pixels at specific positions.

[0051] The plurality of first pixel transfer electrodes 240 extend through the first light-emitting component 200 in the stacking direction of the first light-emitting component 200 and the second light-emitting component 300, and are exposed at both ends of the first light-emitting component 200. One end of the first pixel transfer electrode 240 contacts the drive substrate 100, and the other end contacts the second light-emitting component 300. The plurality of first pixel transfer electrodes 240 are used to transmit the driving current of the drive substrate 100 to the second light-emitting component 300.

[0052] The second light-emitting component 300 can be stacked on a side of the first light-emitting component 200 away from the driving substrate 100 and can include a second light-emitting layer group 310 and a plurality of third pixel-defining electrodes 320 and at least one fourth pixel-defining electrode 330 located on both sides of the second light-emitting layer group 310 .

[0053] The third pixel-defining electrode 320 can be located on the side of the second light-emitting layer group 310 facing the first light-emitting component 200, and cooperates with the second light-emitting layer group 310 and the fourth pixel-defining electrode 330 to form a second pixel. The projection of the second pixel in the stacking direction of the first and second light-emitting components 200 and 300 is offset from the first pixel. The third pixel-defining electrode 320 is conductively connected to the corresponding second pixel power supply electrode 120 via the corresponding first pixel switching electrode 240.

[0054] Similarly, the second light-emitting layer group 310 can be an epitaxial layer capable of recombination of electrons and holes under the support of a driving current, thereby generating light. The second light-emitting layer group 310 can also include a P-type semiconductor and an N-type semiconductor, while the third pixel-defining electrode 320 and the fourth pixel-defining electrode 330 can serve as the P-electrode and N-electrode of the second pixel, respectively, and can form ohmic contacts with the second light-emitting layer group 310 on both sides. Therefore, with the interaction of the third pixel-defining electrode 320, the fourth pixel-defining electrode 330, and the second light-emitting layer group 310, the second light-emitting layer group 310 can display multiple second pixels.

[0055] Optionally, multiple third pixel defining electrodes 320 can be arrayed on the side of the second light-emitting layer group 310 facing the driving substrate 100 according to the required positions of the second pixels, and the positions of the multiple second pixel power supply electrodes 120 correspond one-to-one to the positions of the multiple second pixel defining electrodes 230, so that the second light-emitting layer group 310 can receive the driving current transmitted by the second pixel defining electrodes 230 through the first pixel switching electrode 240 at the positions corresponding to the multiple second pixel defining electrodes 230, thereby enabling the second light-emitting layer group 310 to display multiple second pixels at specific positions.

[0056] Alternatively, the first pixel defining electrode 220 and the third pixel defining electrode 320 may be formed of a conductive material such as ITO, Ag, or Ni, while the first pixel power supply electrode 110, the second pixel power supply electrode 120, and the first pixel switching electrode 240 may be formed of a conductive material such as Cu, Au, or Al. Therefore, the first pixel defining electrode 220 may optionally form a metal bonding structure with the first pixel power supply electrode 110, such as Ni / Al / Pt / Au, ITO / Ag / Ti / Pt / Au, and the first pixel switching electrode 240 may form a metal bonding structure with the second pixel power supply electrode 120 and the third pixel defining electrode 320, such as Ni / Al / Pt / Au, ITO / Ag / Ti / Pt / Au, at its ends.

[0057] In some embodiments, the first light-emitting layer group 210 may be provided with an insulating region (not shown) formed by ion bombardment around the first pixel transfer electrode 240. This prevents current in the first pixel transfer electrode 240 from leaking into the first light-emitting layer group 210 and affecting the first pixel, thereby reducing electrical crosstalk between display pixels. This allows the driver substrate 100 to precisely control the third pixel-defining electrode 320 via the first pixel transfer electrode 240 to control the display effect of the second pixel.

[0058] Alternatively, as shown in Figures 1 and 2, the first light-emitting layer group 210 may include a first semiconductor layer 211, a first active layer 212, and a second semiconductor layer 213, which are sequentially stacked. The first semiconductor layer 211 is located on the side of the first active layer 212 facing the drive substrate 100. The first semiconductor layer 211 may serve as the P-type semiconductor of the first light-emitting layer group 210 and be conductively connected to the first pixel-defining electrode 220. The second semiconductor layer 213 may serve as the N-type semiconductor of the first light-emitting layer group 210 and be conductively connected to the second pixel-defining electrode 230. The first active layer 212 is a multi-layer quantum well light-emitting layer. Recombination of electrons and holes in the first semiconductor layer 211 can generate light within the first active layer 212. The first semiconductor layer 211 and the second semiconductor layer 213 of the second semiconductor layer 213 may be formed by doping semiconductor materials such as AlN, AlGaN, GaN, InGaN, AlInGaN, GaAs, GaP, GaInN, GaAsP, AlGaAs, or AlGaInP.

[0059] Specifically, the thickness and resistivity of the first semiconductor layer 211 are set so that when the LED display device 1 is operating normally, the lateral current diffusion length of the first semiconductor layer 211 satisfies Ls≤1 / 2×D1, where Ls is the lateral current diffusion length of the first semiconductor layer 211, and D1 is the shortest distance between the edge of the portion of the first pixel switching electrode 240 located in the first light-emitting layer group 210 and the edge of the adjacent first pixel defining electrode 220.

[0060] The lateral current diffusion length Ls of the first semiconductor layer 211 is calculated by the following formula: L_s=√(kT / e×t / (ρJ_0)) (1)

[0061] Where k is the Boltzmann constant, T is the thermodynamic temperature, e is the electron charge, t is the thickness of the first semiconductor layer 211, ρ is the resistivity of the first semiconductor layer 211, and J_0 is the current density within the first current diffusion layer covered by the first pixel-defining electrode 220 during normal operation of the LED display device 1. It can be seen that the lateral current diffusion length Ls decreases with decreasing thickness t of the first semiconductor layer 211 and decreases with increasing resistivity ρ of the first semiconductor layer 211. Therefore, the lateral current diffusion length Ls can be reduced, preventing the operating current of the display pixel corresponding to each first pixel-defining electrode 220 from diffusing to the adjacent first pixel switching electrode 240. This achieves self-isolation between each first pixel and the first pixel switching electrode 240, thereby reducing electrical crosstalk between the first and second pixels.

[0062] Alternatively, as shown in Figures 1 to 3, a through hole 2411 may be provided on the first light-emitting layer group 210, and the first pixel transfer electrode 240 passes through the through hole 2411. A hole wall insulating layer 2412 may be provided on the hole wall of the through hole 2411. The hole wall insulating layer 2412 may be an insulating layer made of silicon dioxide, silicon nitride, aluminum oxide, or other insulating materials. The hole wall insulating layer 2412 can be used to directly separate the first pixel transfer electrode 240 from the first light-emitting layer group 210. The preparation process is simple, and it can reduce the electrical crosstalk between the first pixel and the second pixel while reducing the cost of the LED display device 1.

[0063] In some embodiments, in a direction perpendicular to the stacking direction, a distance from an edge of a portion of the first pixel switching electrode 240 located within the first light-emitting layer group 210 to an edge of the first pixel defining electrode 220 may be greater than or equal to one-quarter of a dimension of the first pixel defining electrode 220 along the vertical direction.

[0064] And / or, in the direction perpendicular to the stacking direction, the distance from the edge of the portion of the first pixel switching electrode 240 located in the first light-emitting layer group 210 to the edge of the second pixel defining electrode 230 is greater than or equal to one quarter of the size of the second pixel defining electrode 230 along the vertical direction.

[0065] For example, as shown in FIG1 , the stacking direction of the first light-emitting component 200 and the second light-emitting component 300 is indicated by arrow A in FIG1 , and the direction perpendicular to the stacking direction is indicated by arrow B in FIG1 . The distance between the edge of the portion of the first pixel switching electrode 240 located within the first light-emitting layer group 210 and the edge of the second pixel-defining electrode 230 can be indicated by distance D in the figure, and the vertical dimension of the second pixel-defining electrode 230 can be indicated by distance E in the figure, where D is greater than or equal to E / 4.

[0066] The above configuration can prevent the first pixel switching electrode 240 from leaking current to the first pixel, thereby further reducing electrical crosstalk between the first pixel and the second pixel, improving the reliability and yield of the LED display device 1, and reducing the probability of leakage.

[0067] In some embodiments, as shown in FIG1 , the first light-emitting assembly 200 may further include a first interlayer insulating layer 250, a second interlayer insulating layer 260, and a first pixel extraction electrode 270. The first interlayer insulating layer 250 may cover the side of the first light-emitting layer group 210 facing the drive substrate 100 and the first pixel-defining electrode 220. One end of the first pixel extraction electrode 270 is conductively connected to the first pixel-defining electrode 220, while the other end of the first pixel extraction electrode 270 is exposed from the side of the first interlayer insulating layer 250 facing the drive substrate 100. The first pixel extraction electrode 270 is bonded to the first pixel power supply electrode 110. The second interlayer insulating layer 260 may cover the side of the first light-emitting layer group 210 facing away from the drive substrate 100 and the second pixel-defining electrode 230. The first pixel transfer electrode 240 further penetrates the first and second interlayer insulating layers 250 and 260.

[0068] The first pixel extraction electrode 270 can be made of a conductive material such as Cu, Au, or Al, and can form a copper, indium, gold, or tin metal bonding with the first pixel power supply electrode 110. Of course, in other embodiments, hybrid bonding of insulating and metallic materials can be achieved using methods such as SiO2 / Cu, PI / Cu, or BCB / Cu, and this application does not impose any specific limitations thereon.

[0069] Specifically, the first pixel extraction electrode 270 can be embedded in the first interlayer insulating layer 250, and the surface of the first pixel extraction electrode 270 facing the driving substrate 100 can be flush with the surface of the first interlayer insulating layer 250 facing the driving substrate 100, so that after the dielectric layer is bonded, it can be bonded to the first pixel extraction electrode 270 and the first pixel power supply electrode 110 through high-temperature annealing and diffusion.

[0070] A first interlayer insulating layer 250 is provided to cover the side of the first light-emitting layer group 210 facing the driving substrate 100 and the first pixel defining electrode 220, which can further fix the first pixel defining electrode 220, the first pixel lead-out electrode 270 and the first pixel transfer electrode 240 to further stabilize the positions of the first pixel and the second pixel, thereby making the structure of the LED display device 1 more compact.

[0071] The first interlayer insulating layer 250 and the second interlayer insulating layer 260 can be made of insulating materials such as silicon dioxide, BCB, or PI. This configuration can reduce leakage and crosstalk between display pixels. Furthermore, the first interlayer insulating layer 250 can also serve as a mask and protective layer to prevent impurities from diffusing, thereby reducing the risk of impurities entering the LED display device 1 and affecting its operation.

[0072] Specifically, the second interlayer insulating layer 260 needs to be made of a transparent insulating material. Since light emitted from the first light-emitting group layer passes through the second interlayer insulating layer 260 and is emitted outward when the first light-emitting group layer is powered on, setting the second interlayer insulating layer 260 as a transparent insulating layer can reduce light loss, thereby increasing the luminous efficiency of the LED display device 1.

[0073] Similarly, in some embodiments, the second light-emitting component 300 may further include a third interlayer insulating layer 340 and a second pixel extraction electrode 350, the third interlayer insulating layer 340 covers the side of the second light-emitting layer group 310 facing the first light-emitting layer group 210 and the third pixel defining electrode 320, one end of the second pixel extraction electrode 350 is conductively connected to the third pixel defining electrode 320, and the other end of the second pixel extraction electrode 350 is exposed from the third interlayer insulating layer 340 toward the side of the first light-emitting layer group 210, and the second pixel extraction electrode 350 and the first pixel transfer electrode 240 are bonded to each other.

[0074] Specifically, the second pixel extraction electrode 350 is embedded in the third interlayer insulating layer 340, and the surface of the second pixel extraction electrode 350 facing the first light-emitting component 200 can be flush with the surface of the third interlayer insulating layer 340 facing the first light-emitting component 200. The first pixel transfer electrode 240 is exposed on the side of the second interlayer insulating layer 260 facing the second light-emitting layer group 310 and can be flush with the surface of the second interlayer insulating layer 260 facing the second light-emitting layer group 310. This facilitates the stacking of the first light-emitting component 200 and the second light-emitting component 300, and facilitates the bonding connection between the second pixel extraction electrode 350 and the first pixel transfer electrode 240.

[0075] Similarly, the second pixel extraction electrode 350 can be made of a conductive material such as Cu, Au, or Al, and can form a copper, indium, gold, or tin metal bonding with the first pixel transfer electrode 240. The third interlayer insulating layer 340 can also be made of a transparent and insulating material such as silicon dioxide, PI, or BCB, so that light emitted by the first and second pixels can pass through the third interlayer insulating layer 340 and exit the LED display device 1.

[0076] In some embodiments, as shown in FIG. 1 , the first pixel power supplying electrode 110 may include a first pixel power supplying portion 111 and a second pixel power supplying portion 112 connected to each other, and the first pixel extraction electrode 270 may include a first pixel extraction portion 271 and a second pixel extraction portion 272 connected to each other.

[0077] In a direction perpendicular to the stacking direction, the first pixel power supply portion 111 can be larger than the second pixel power supply portion 112, and the first pixel lead portion 271 can be larger than the second pixel lead portion 272. The first pixel power supply portion 111 and the first pixel lead portion 271 are bonded to each other, and the second pixel power supply portion 112 is conductively connected to the first pixel defining electrode 220. Increasing the contact area of ​​the portion where the first pixel power supply electrode 110 and the first pixel lead electrode 270 are bonded to each other can form a double-layer damask structure, facilitating bonding between the first pixel power supply electrode 110 and the first pixel lead electrode 270, thereby achieving a stronger connection.

[0078] Similarly, in some embodiments, the second pixel extraction electrode 350 may include a third pixel extraction portion 351 and a fourth pixel extraction portion 352 connected to each other, and the first pixel switching electrode 240 may include a first pixel switching portion 241 and a second pixel switching portion 242 connected to each other. In a direction perpendicular to the stacking direction, the first pixel switching portion 241 is larger than the second pixel switching portion 242, and the third pixel extraction portion 351 is larger than the fourth pixel extraction portion 352. The first pixel switching portion 241 and the third pixel extraction portion 351 are bonded to each other, and the fourth pixel extraction portion 352 is conductively connected to the third pixel defining electrode 320.

[0079] Of course, in other embodiments, structures of the same size, i.e., single-layer Damascene structures, may be provided between the first pixel power supply electrodes 110 and the first pixel power supply electrodes 110 and between the first and second pixel lead-out electrodes 350 and the first pixel transfer portion 241, and this embodiment does not make any specific limitation here.

[0080] In some embodiments, conductive connections can be formed between the second pixel lead portion 272 and the first pixel-defining electrode 220, between the fourth pixel lead portion 352 and the third pixel-defining electrode 320, and between the second pixel transition portion 242 and the second pixel power supply electrode 120, respectively, by deposition. In other words, the second pixel lead portion 272 can be formed by deposition in the first light-emitting component 200 and conductively connected to the first pixel-defining electrode 220. Similarly, the fourth pixel lead portion 352 can be formed by deposition in the second light-emitting component 300 and conductively connected to the third pixel-defining electrode 320. Furthermore, the second pixel transition portion 242 can be formed by deposition in the first light-emitting component 200 and conductively connected to the second pixel power supply electrode 120.

[0081] The use of deposition can facilitate the formation of the second pixel lead-out portion 272, the fourth pixel lead-out portion 352 and the second pixel transition portion 242, thereby reducing the difficulty of preparing the LED display device 1, and can also enhance the conductive connection between the two pixel lead-out portions and the first pixel defining electrode 220, between the fourth pixel lead-out portion 352 and the third pixel defining electrode 320, and between the second pixel transition portion 242 and the second pixel power supply electrode 120.

[0082] In some embodiments, as shown in Figures 1 to 4 , the number of second pixel-defining electrodes 230 can correspond to the number of first pixel-defining electrodes 220, and the first light-emitting assembly 200 can further include a first interconnecting electrode 280 that conductively connects the plurality of second pixel-defining electrodes 230. Specifically, the plurality of second pixel-defining electrodes 230 correspond one-to-one to the plurality of first pixel-defining electrodes 220. The plurality of second pixel-defining electrodes 230 and the first interconnecting electrode 280 together constitute a common N-electrode of the first light-emitting layer group 210. The first interconnecting electrode 280 is a grid-like interconnecting electrode that connects all of the second pixel-defining electrodes 230 and can cooperate with the first light-emitting layer group 210 to form a first pixel.

[0083] A first interconnecting electrode 280 is provided to connect a plurality of second pixel defining electrodes 230 , so that a reference voltage can be provided to all the second pixel defining electrodes 230 by providing a reference voltage to the first interconnecting electrode 280 , thereby achieving unified control of the plurality of second pixel defining electrodes 230 , and controlling the display of the first pixel with the LED display device 1 .

[0084] Alternatively, the number of fourth pixel-defining electrodes 330 may correspond to the number of third pixel-defining electrodes 320, and the second light-emitting component 300 may further include a second interconnect electrode 360 ​​conductively connecting the plurality of fourth pixel-defining electrodes 330. Similarly, providing the second interconnect electrode 360 ​​to connect the plurality of fourth pixel-defining electrodes 330 corresponding to the plurality of second pixels enables unified control of the plurality of fourth pixel-defining electrodes 330, thereby facilitating the LED display device 1 to control the display of the second pixel.

[0085] Alternatively, as shown in FIG4 , the first interconnecting electrodes 280 may be arranged in a grid pattern and partially cover the second pixel-defining electrodes 230 along the edges of the second pixel-defining electrodes 230. This arrangement not only reduces the manufacturing cost of the LED display device 1 but also prevents the first interconnecting electrodes 280 from contacting the first pixel transfer electrodes 240 and causing leakage, thereby ensuring the feasibility and yield of the LED display device 1.

[0086] In some embodiments, the reflectivity of the second pixel defining electrode 230 can be lower than the reflectivity of the first pixel defining electrode 220 , and the thickness of the first light emitting layer is controlled to form a first resonant cavity that emits light from one side of the second pixel defining electrode 230 .

[0087] Such a configuration allows the first light-emitting layer group 210 to emit light under the action of the driving voltage and the reference voltage, and the light it generates can be reflected by the first pixel-defining electrode 220 with a higher reflectivity and emitted from the side of the second pixel-defining electrode 230 with a lower reflectivity, so that the light output of the first pixel is more collimated, thereby improving the light output efficiency of the LED display device 1.

[0088] Alternatively, the reflectivity of the fourth pixel-defining electrode 330 can be lower than the reflectivity of the third pixel-defining electrode 320, and the thickness of the second light-emitting layer can be controlled to form a second resonant cavity that emits light from one side of the fourth pixel-defining electrode 330. The second interconnecting electrodes 360 can be arranged in a grid pattern and partially cover the fourth pixel-defining electrode 330 along its edges.

[0089] In some embodiments, for example, the first pixel defining electrode 220 and the third pixel defining electrode 320 can be made of highly reflective materials such as metallic silver and aluminum, and the second pixel defining electrode 230 and the fourth pixel defining electrode 330 can be made of materials such as Al, Ti, Ni, or can be made of a dielectric layer DBR (distributed Bragg reflector).

[0090] Such an arrangement can ensure the light output collimation of each pixel of the LED display device 1 and can also reduce the occurrence of leakage, thereby improving the light output efficiency and yield rate of the LED display device 1.

[0091] Optionally, as shown in FIG1 , a transparent electrode layer 221 can be disposed between the first pixel-defining electrode 220 and the first light-emitting layer group 210. The transparent electrode layer 221 forms an ohmic contact with the first light-emitting layer group 210, and the first pixel-defining electrode 220 and the transparent electrode layer 221 form an ohmic contact, thereby collectively serving as the P-electrode of the first pixel. The transparent electrode layer 221 can be made of a material such as an ITO electrode. Other display pixels can also be configured in this manner, with the transparent electrode layer 221 serving as the primary P-electrode to transmit current to the first light-emitting layer group 210, facilitating the selection of a highly reflective material as the first pixel-defining electrode 220.

[0092] In some embodiments, the wavelength of light output by the first light-emitting assembly 200 may be greater than the wavelength of light output by the second light-emitting assembly 300. For example, the first light-emitting assembly 200 may emit green light, and the second light-emitting assembly 300 may emit blue light, where the wavelength of green light is greater than the wavelength of blue light output. By setting the wavelengths of light output by the first light-emitting assembly 200 and the second light-emitting assembly 300 to be inconsistent, the LED display device 1 can obtain display pixels capable of displaying different colors, thereby enriching the display effect of the LED display device 1.

[0093] In some implementations, the LED display device 1 can add other display pixels with reference to the structural form of the second pixel.

[0094] For example, in some embodiments, as shown in Figure 1, the driving substrate 100 may further include a plurality of third pixel power supply electrodes 130, the first light-emitting component 200 may further include a second pixel switching electrode 290 that passes through the first light-emitting layer group 210, and the second light-emitting component 300 further includes a third pixel switching electrode 370 that passes through the second light-emitting layer group 310 and is connected to the second pixel switching electrode 290.

[0095] The LED display device 1 may further include a third light-emitting assembly 400. The third light-emitting assembly 400 may be stacked on a side of the second light-emitting assembly 300 facing away from the first light-emitting assembly 200 and includes a third light-emitting layer group 410, a plurality of fifth pixel-defining electrodes 420, and at least one sixth pixel-defining electrode 430 located on both sides of the third light-emitting layer group 410. The fifth pixel-defining electrode 420 is located on the side of the third light-emitting layer group 410 facing the second light-emitting assembly 300 and cooperates with the third light-emitting layer group 410 and the sixth pixel-defining electrode 430 to form a third pixel.

[0096] The projection of the third pixel in the stacking direction may be staggered with the first pixel and the second pixel. The fifth pixel defining electrode 420 is conductively connected to the corresponding third pixel power supply electrode 130 via the second pixel switching electrode 290 and the third pixel switching electrode 370 .

[0097] Optionally, the wavelength of the light output by the first light-emitting component 200 may be greater than the wavelength of the light output by the second light-emitting component 300, and the wavelength of the light output by the first light-emitting component 200 may be less than the wavelength of the light output by the third light-emitting component 400. For example, the light output by the first light-emitting component 200 may be green light, the light output by the second light-emitting component 300 may be blue light, and the light output by the third light-emitting component 400 may be red light, wherein the wavelength of red light is greater than that of green light, and the wavelength of green light is greater than that of blue light. This further enriches the display effect of the LED display device 1.

[0098] Through the above arrangement, the present application adopts a stacking method to arrange display pixels with different output light wavelengths on different planes, thereby reducing the difficulty of manufacturing a high-density pixel integrated array within the same plane. This can reduce the difficulty of manufacturing LED display devices 1 with multiple colors while maintaining the display pixel density of the LED display device 1. Moreover, this can also reduce the occurrence of excessive etching in the same plane component that may damage the LED display device 1, thereby improving the yield rate of the finished LED chip.

[0099] Optionally, in the stacking direction of the third light-emitting component 400 and the second light-emitting component 300, the sixth pixel defining electrode 430, the fifth pixel defining electrode 420, the third pixel switching electrode 370, the second pixel switching electrode 290 and the third pixel power supply electrode 130 are projected to overlap and are stacked in sequence, and are conductively connected to each other, so that the fifth pixel defining electrode 420 can receive the driving current provided by the third pixel power supply electrode 130 to drive the third pixel to emit light.

[0100] Likewise, the specific structure of the third light-emitting component 400 layer may refer to the structure of the second light-emitting component 300 , and will not be further described in this embodiment.

[0101] In some embodiments, an insulating layer may be added to the side of the second light-emitting component 300 facing away from the first light-emitting component 200 to cover the second interconnect electrode 360 ​​and the fourth pixel electrode 330. A hole may then be formed at the location corresponding to the third pixel power supply electrode through deep etching, and the second pixel transfer electrode 290 and the third pixel transfer electrode 370 may be added through deposition or electroplating. The third light-emitting component 400 may also be secured to the side of the second light-emitting component 300 facing away from the first light-emitting component 200 through metal bonding or hybrid bonding, such that the second pixel transfer electrode 290 and the third pixel transfer electrode 370 are electrically connected, thereby securing the third light-emitting component 400 to the second light-emitting component 300.

[0102] In other embodiments, the common N-electrode of the display pixels of the LED display device 1 may be disposed at other locations.

[0103] 5 and 6 , the driving substrate 100 may further include a common power supply electrode 140 . The first light emitting component 200 may further include a first common extraction electrode 201 and a first common transfer electrode 202 . The second light emitting component 300 may further include a second common extraction electrode 301 .

[0104] Optionally, the first light-emitting layer group 210 may include a first semiconductor layer 211, a first active layer 212, and a second semiconductor layer 213 stacked in sequence, with the first semiconductor layer 211 being located on a side of the first active layer 212 facing the drive substrate 100. The details of the first semiconductor layer 211, the first active layer 212, and the second semiconductor layer 213 are described above and are not further described in detail in this embodiment.

[0105] The second light-emitting layer group 310 may also include a third semiconductor layer 311, a second active layer 312, and a fourth semiconductor layer 313 stacked in sequence. The third semiconductor layer 311 is located on the side of the second active layer 312 facing the first light-emitting component 200. The specific description of the third semiconductor layer 311, the second active layer 312, and the fourth semiconductor layer 313 can refer to the first semiconductor layer 211, the first active layer 212, and the second semiconductor layer 213, and will not be repeated here in this embodiment.

[0106] Among them, the first common lead-out electrode 201 can penetrate the first semiconductor layer 211 and the first active layer 212, and be conductively connected to the second semiconductor layer 213 and / or the second pixel defining electrode 230, the first common transfer electrode 202 penetrates the first light-emitting layer group 210, and the first common lead-out electrode 201 and the first common transfer electrode 202 are respectively conductively connected to the common power supply electrode 140.

[0107] Specifically, the common power supply electrode 140 can provide a reference voltage to the second semiconductor layer 213 and / or the second pixel defining electrode 230 through the first common lead-out electrode 201, so that the first common lead-out electrode 201 can serve as the common N-electrode of the first light-emitting layer group 210, and can form an ohmic contact with the second semiconductor layer 213 which is an N-type semiconductor, thereby enabling a current path to be formed between the common power supply electrode 140, the first common lead-out electrode 201, the first light-emitting layer group 210, the first pixel defining electrode 220 and the first pixel power supply electrode 110, so that the LED display device 1 can control the first pixel by controlling the common power supply electrode 140 and the first pixel power supply electrode 110.

[0108] Similarly, the second common extraction electrode 301 can penetrate the third semiconductor layer 311 and the second active layer 312, and be conductively connected to the fourth semiconductor layer 313 and / or the fourth pixel-defining electrode 330. The second common extraction electrode 301 can be conductively connected to the common power supply electrode 140 via the first common switching electrode 202. The second common extraction electrode 301 can also form an ohmic contact with the fourth semiconductor layer 313 and / or the fourth pixel-defining electrode 330, so that a current path can be formed between the common power supply electrode 140, the first common switching electrode 202, the second light-emitting layer group 310, the third pixel-defining electrode 320, and the second pixel power supply electrode 120, so that the LED display device 1 can control the second pixel by controlling the common power supply electrode 140 and the second pixel power supply electrode 120.

[0109] An insulating arrangement may be provided between the first common extraction electrode 201 and the first semiconductor layer 211 and the first active layer 212, and between the second common extraction electrode 301 and the third semiconductor layer 311 and the second active layer 312. For example, the gap between the first common extraction electrode 201 and the first semiconductor layer 211 and the first active layer 212 may be filled with the first interlayer insulating layer 250, and the gap between the second common extraction electrode 301 and the third semiconductor layer 311 and the second active layer 312 may be filled with the third interlayer insulating layer 340, thereby achieving an insulating arrangement.

[0110] Furthermore, the first common transfer electrode 202 and the first light-emitting component 200 may be insulated from each other to reduce the possibility of leakage of electricity from the first common transfer electrode 202 to the first light-emitting component 200 during operation.

[0111] 6 , a first insulating layer 2023 may be added between the first common switching electrode 202 and the first light-emitting component 200. The first insulating layer 2023 may be made of silicon dioxide, silicon nitride, aluminum oxide or other insulating materials.

[0112] Alternatively, in other embodiments, ion bombardment may be performed on a portion of the first light-emitting component 200 near the first common transfer electrode 202, thereby forming an insulating region within the first light-emitting component 200. Of course, other methods may also be employed to provide an insulating arrangement between the first common transfer electrode 202 and the first light-emitting component 200, which will not be specifically listed in this embodiment.

[0113] Optionally, the common power supply electrode 140, the first common lead-out electrode 201, the first common transfer electrode 202, and the second common lead-out electrode 301 can all be formed of conductive materials such as Cu, Cr, Ti, Ni metal, or Au metal. Moreover, a metal bonding structure or a mixed bonding structure can be formed between the first common lead-out electrode 201 and the common power supply electrode 140, and between the first common transfer electrode 202 and the second common lead-out electrode 301, for example, it can be a bonding between In-In, or a bonding between Au-Au, or a bonding between Cu-Cu, or a mixed bonding between Cu / SiO2-Cu / SiO2, or a mixed bonding between Cu / BCB-Cu / BCB, or a mixed bonding between Cu / PI-Cu / PI. The metal bonding structure or mixed bonding can make the connection between the components more secure and ensure the conductive effect between the components.

[0114] Of course, in other embodiments, other fixing methods may be used to fix the first common lead-out electrode 201 and the common power supply electrode 140 as well as the first common switching electrode 202 and the second common lead-out electrode 301 .

[0115] In some embodiments, as shown in Figures 5 and 6 , the first common lead-out electrode 201 may include a first common lead-out portion 2011 and a second common lead-out portion 2012 connected to each other. In a direction perpendicular to the stacking direction, the first common lead-out portion 2011 is larger than the second common lead-out portion 2012. The first common lead-out portion 2011 is bonded to the common power supply electrode 140, while the second common lead-out portion 2012 is conductively connected to the second semiconductor layer 213 and / or the second pixel defining electrode 230. This arrangement increases the contact area between the first common lead-out electrode 201 and the common power supply electrode 140, thereby facilitating the bonding connection between the first common lead-out portion 2011 and the common power supply electrode 140.

[0116] Optionally, the second common lead-out electrode 301 may also include a third common lead-out portion 3011 and a fourth common lead-out portion 3012 connected to each other. In a direction perpendicular to the stacking direction, the third common lead-out portion 3011 is larger than the fourth common lead-out portion 3012. The third common lead-out portion 3011 is bonded to the first common transfer electrode 202. Optionally, the fourth common lead-out portion 3012 is conductively connected to the fourth semiconductor layer 313 and / or the fourth pixel-defining electrode 330.

[0117] In some embodiments, the first common transition electrode 202 may include a first common transition portion 2021 and a second common transition portion 2022 that are connected to each other. In a direction perpendicular to the stacking direction, the first common transition portion 2021 is larger than the second common transition portion 2022. The third common lead portion 3011 is bonded to the first common transition portion 2021, and the second common transition portion 2022 is conductively connected to the common power supply electrode 140. Similarly, this arrangement can increase the contact area between the third common lead portion 3011 and the first common transition electrode 202, thereby facilitating the bonded connection between the third common lead portion 3011 and the first common transition electrode 202.

[0118] Optionally, the first common lead-out electrode 201 and the fourth common lead-out portion 3012 may be formed by deposition, which may facilitate the preparation of the LED display device 1 .

[0119] In some embodiments, the common power supply electrode 140, the first common extraction electrode 201, the first common transfer electrode 202, and the second common extraction electrode 301 can be arranged in a ring configuration surrounding the plurality of first pixel-defining electrodes 220 and the plurality of second pixel-defining electrodes 230. This arrangement facilitates connection of the common power supply electrode 140 to an external reference voltage, facilitating wiring of the LED display device 1. It also allows the plurality of first pixel-defining electrodes 220 and the plurality of second pixel-defining electrodes 230 to receive the voltage transmitted from the common power supply electrode 140 in a more balanced manner, thereby increasing the stability of the LED display device 1.

[0120] In some embodiments, as shown in Figures 5 and 6, if the LED display device 1 includes a third light-emitting component 400, the third light-emitting component 400 may include a third common lead-out electrode 440, and the LED display device 1 also includes a second common transfer electrode 441. The second common transfer electrode 441 can pass through the second light-emitting component 300 and the first light-emitting component 200 and be conductively connected to the common power supply electrode 140 at one end, and the other end can be conductively connected to the third common lead-out electrode 440 to transmit the reference voltage provided by the common power supply electrode 140 to the third common lead-out electrode 440.

[0121] Optionally, the second common transition electrode 441 may include a first transition electrode portion 4411 and a second transition electrode portion 4412. The first transition electrode portion 4411 extends through the first light-emitting component 200 and is conductively connected to the common power supply electrode 140 at one end. The second transition electrode portion 4412 extends through the second light-emitting component 300 and is bonded to the first transition electrode portion 4411 at one end and to the third common extraction electrode 440 at another end. The specific structures of the first and second transition electrode portions 4411 and 4412 can be referenced to those of the first common transition electrode 202 and will not be further detailed herein.

[0122] The end of the third extraction electrode away from the common power supply electrode 140 penetrates the P-type semiconductor and the active layer of the third light-emitting component 400 and contacts the N-type semiconductor, so that the third extraction electrode can transmit the reference voltage to the N-type semiconductor.

[0123] Insulation is provided between the second common transition electrode 441 and the second light-emitting component 300 and the first light-emitting component 200, as well as between the third common lead-out electrode 440 and the P-type semiconductor and active layer in the third light-emitting component 400, to reduce current leakage. The specific insulation arrangements for the second common transition electrode 441 and the third common lead-out electrode 440 can be found in the description of the second common lead-out portion 2012 and the first common transition electrode 202 above, and will not be repeated here in this embodiment.

[0124] Taking the structure of the above-mentioned LED display device 1 as an example, the preparation process of the LED display device 1 is exemplarily described below.

[0125] As shown in Figures 7 to 19, Figures 7 to 9 show the manufacturing method flow of the LED display device 1 in one embodiment of the present application, and Figures 10 to 14 show the preparation process and component structure involved in the step flow of Figures 7 to 9.

[0126] S100: providing a driving substrate, wherein the driving substrate comprises a plurality of first pixel power supply electrodes and a plurality of second pixel power supply electrodes.

[0127] Specifically, the positions of the plurality of first pixel power-supply electrodes 110 and the plurality of second pixel power-supply electrodes 120 can be first placed on the substrate body 150 of the driving substrate so as to correspond one-to-one with the positions of the first pixels and the second pixels. Then, the insulating dielectric layer 160 is filled in the gaps between the plurality of first pixel power-supply electrodes 110 and the plurality of second pixel power-supply electrodes 120 to fix the positions of the plurality of first pixel power-supply electrodes 110 and the plurality of second pixel power-supply electrodes 120. Furthermore, the surface of the insulating dielectric layer 160 facing away from the substrate body can be CMP polished to expose the plurality of first pixel power-supply electrodes 110 and the plurality of second pixel power-supply electrodes 120, and to make the surfaces of the plurality of first pixel power-supply electrodes 110 and the plurality of second pixel power-supply electrodes 120 and the insulating dielectric layer 160 smooth.

[0128] In some embodiments, if the LED display device 1 includes multiple third pixels, the drive substrate 100 may accordingly include multiple third pixel power supply electrodes 130, with the positions of the third pixel power supply electrodes 130 corresponding one-to-one to the desired third pixel positions. The multiple first pixel power supply electrodes 110, the multiple second pixel power supply electrodes 120, and the multiple third pixel power supply electrodes 130 are arranged in an array at intervals according to their desired positions.

[0129] S200: A first light-emitting component is stacked on a driving substrate, wherein the first light-emitting component includes a first light-emitting layer group, a plurality of first pixel-defining electrodes, at least one second pixel-defining electrode and a first pixel switching electrode, the first pixel-defining electrode and the second pixel-defining electrode are located on both sides of the first light-emitting layer group, the first pixel-defining electrode is located on the side of the first light-emitting layer group facing the driving substrate, and respectively cooperates with the first light-emitting layer group and the second pixel-defining electrode to form a first pixel, wherein the first pixel-defining electrode is respectively conductively connected to the corresponding first pixel power supply electrode, and the first pixel switching electrode passes through the first light-emitting layer group.

[0130] Specifically, this step can be divided into the following steps:

[0131] S210: forming a first light-emitting layer group on a first temporary substrate, and forming a plurality of first pixel-defining electrodes on a side of the first light-emitting layer group facing away from the first temporary substrate.

[0132] Specifically, this step may include steps S211-S214:

[0133] S211: providing a first temporary substrate.

[0134] The first temporary substrate 500 can be made of sapphire, silicon, silicon carbide, gallium nitride, or other materials, or can be made of ceramic, glass, or a PCB substrate. In this embodiment, the first temporary substrate 500 is made of a silicon substrate. Silicon substrates offer excellent electrical insulation, high thermal conductivity, and high adhesion strength. They also possess the advantages of high strength, stable shape, and ease of removal. They are compatible with semiconductor manufacturing equipment and processes, and are suitable for high-yield display pixel fabrication.

[0135] S212: The first light-emitting layer group may be formed on the first temporary substrate by growth.

[0136] The first semiconductor layer 211 of the first light-emitting layer group 210 is far away from the first temporary substrate 500 , and the second semiconductor layer 213 of the first light-emitting layer group 210 is close to and in contact with the first temporary substrate 500 .

[0137] Alternatively, a first light-emitting layer group 210 may be provided, and the first light-emitting layer group 210 may be fixed on the first temporary substrate 500 by transfer, or other methods may be used, which are not listed in detail in this embodiment.

[0138] S213: forming a first pixel defining electrode on a side of the first light-emitting layer group facing away from the first temporary substrate.

[0139] Specifically, an annealing process can be used to coat the side of the first light-emitting layer group 210 facing away from the first temporary substrate 500 with a transparent electrode layer 2211 and a first metal electrode layer 222. After the annealing process is completed, the transparent electrode layer 2211 can form an ohmic contact with the first light-emitting layer group 210, and the transparent electrode layer 2211 can form an ohmic contact with the first metal electrode layer 222. The transparent electrode layer 2211 and the first metal electrode layer 222 are then etched to obtain the transparent electrode layer 221 and a plurality of first pixel-defining electrodes 220. The positions of the plurality of first pixel-defining electrodes 220 correspond one-to-one to the positions of the first pixels. Alternatively, the transparent electrode layer 221 and the first pixel-defining electrodes 220 can be formed using a liftoff method, which is not limited here.

[0140] S214: forming a first interlayer insulating layer covering the side of the first pixel defining electrode facing away from the first light emitting layer group.

[0141] Furthermore, a first interlayer insulating layer 250 can be formed to cover the side of the first pixel defining electrode 220 facing away from the first light-emitting layer group 210. The material of the first interlayer insulating layer 250 can be silicon oxide, silicon nitride, BCB or PI, etc., which are not specifically limited here. Furthermore, a first via hole 2711 can be formed in the first interlayer insulating layer 250 at a position corresponding to the first pixel defining electrode 220 through a double exposure, development and etching process, and then a first pixel extraction electrode 270 can be formed in the first via hole 2711 by deposition, so that the second pixel extraction electrode 350 is conductively connected to the first pixel defining electrode 220. Of course, in other embodiments, the first pixel extraction electrode 270 can also be formed by other methods such as magnetron sputtering, electron beam evaporation, electroplating, etc., which are not specifically limited in this embodiment.

[0142] Alternatively, in other embodiments, the first pixel extraction electrode 270 may be fixed first so that the first pixel extraction electrode 270 is conductively connected to the first pixel defining electrode 220 , and then further filled to form a first interlayer insulating layer 250 , thereby fixing the first pixel extraction electrode 270 and the first pixel defining electrode 220 .

[0143] Optionally, a chemical mechanical polishing (CMP) process can be performed to make the first interlayer insulating layer 250 and the first pixel extraction electrode 270 facing away from the first light-emitting layer group 210 flat and maintain nanometer-level flatness, and the first pixel extraction electrode 270 is exposed from the first interlayer insulating layer 250 .

[0144] Optionally, when the thermal expansion coefficient of the first interlayer insulating layer 250 is greater than that of the first pixel extraction electrode 270, the first pixel extraction electrode 270 may be slightly recessed from the surface of the first interlayer insulating layer 250. For example, the first pixel extraction electrode 270 may be 3 nm below the surface of the first interlayer insulating layer 250. This configuration prepares for subsequent connection and bonding with the drive substrate 100, facilitating expansion of the first pixel extraction electrode 270 during subsequent bonding. Optionally, when the thermal expansion coefficient of the first interlayer insulating layer 250 is close to that of the first pixel extraction electrode 270, the first pixel extraction electrode 270 may be flush with the surface of the first interlayer insulating layer 250. This configuration prepares for subsequent connection and bonding with the drive substrate 100.

[0145] S220: transferring the first light-emitting layer group to the driving substrate, and conductively connecting the first pixel defining electrodes to the corresponding first pixel power supply electrodes.

[0146] Optionally, the side of the driving substrate 100 provided with the first pixel power supply electrode 110 and the exposed side of the first pixel extraction electrode 270 of the first light-emitting assembly 200 are subjected to plasma activation or chemical treatment. The first light-emitting assembly 200 layer group is then placed upside down on the driving substrate 100, with the first pixel extraction electrode 270 facing the first pixel power supply electrode 110 of the driving substrate 100. A bonding device can be used to precisely align the first pixel extraction electrode 270 and the first pixel power supply electrode 110. The first pixel extraction electrode 270 and the first pixel power supply electrode 110 can then be heat-bonded using a TCB (Thermal Compression Bonding) process, or bonded using a room-temperature bonding process, thereby achieving a high-strength connection between the driving substrate 100 and the first light-emitting layer group 210.

[0147] Furthermore, the first temporary substrate 500 can be removed by grinding, chemical etching or laser lift-off (LLO) to expose the first light-emitting layer group 210, and the first light-emitting layer group 210 can be further ground to a desired thickness by ICP etching or CMP.

[0148] S230: forming a second pixel defining electrode on a side of the first light-emitting layer group facing away from the driving substrate, and forming a first pixel switching electrode that penetrates the first light-emitting layer group and is conductively connected to the second pixel power supply electrode.

[0149] Specifically, a second pixel-defining electrode 230 can be formed on the side of the first light-emitting layer group 210 facing away from the drive substrate 100 by electroplating, deposition, photolithography, etching, or the like. The position of the second pixel-defining electrode 230 corresponds to the position of the first pixel-defining electrode 220. The second pixel-defining electrode 230 forms an ohmic contact with the second semiconductor layer 213 of the first light-emitting layer group 210 to achieve a conductive connection. The reflectivity of the second pixel-defining electrode 230 is lower than that of the first pixel-defining electrode 220, so that the first light-emitting layer group 210 forms a first resonant cavity. Optionally, the number of second pixel-defining electrodes 230 can correspond to the number of first pixel-defining electrodes 220 to form a plurality of first pixels.

[0150] Furthermore, a first interconnect electrode 280 can be disposed on a side of the second pixel power supply electrode 120 facing away from the first light-emitting layer group 210. The first interconnect electrode 280 is conductively connected to the plurality of second pixel-defining electrodes 230. The first interconnect electrode 280 can be arranged in a grid pattern around the second pixel-defining electrodes 230, with one end disposed at an edge of the first light-emitting layer group 210. This allows the first interconnect electrode 280 to connect to an external power source to transmit a reference voltage to the second pixel-defining electrodes 230, and the second pixel-defining electrodes 230 to uniformly receive the reference voltage provided by the first interconnect electrode 280.

[0151] Furthermore, the first interconnection electrode 280 is disposed at a position staggered from the positions of other display pixels, so that the first interconnection electrode 280 does not affect the electrode connection of other display pixels.

[0152] Furthermore, a second interlayer insulating layer 260 is filled and covered on the side of the first light emitting layer group 210 away from the driving substrate 100 . The second interlayer insulating layer 260 covers the first light emitting layer group 210 , the second pixel defining electrode 230 and the first interconnection electrode 280 .

[0153] Optionally, the first light emitting component 200 is deeply etched at positions corresponding to the second pixel power supply electrodes 120 to form a plurality of through holes 2411 on the first light emitting layer group 210 , wherein the second pixel power supply electrodes 120 can be exposed in the corresponding through holes 2411 .

[0154] Optionally, in a direction perpendicular to the stacking direction, the distance between the edge of the portion of the through hole 2411 located within the first light-emitting layer group 210 and the edge of the first pixel-defining electrode 220 is greater than or equal to one-quarter of the vertical dimension of the first pixel-defining electrode 220. Furthermore, / or, the distance between the edge of the portion of the first pixel switching electrode 240 located within the first light-emitting layer group 210 and the edge of the second pixel-defining electrode 230 is greater than or equal to one-quarter of the vertical dimension of the second pixel-defining electrode 230. By limiting the distance between the through hole 2411 and the first and second pixel-defining electrodes 220 and 230 in this manner, current leakage from the first pixel can be reduced to prevent interference with the first pixel switching electrode 240.

[0155] In some embodiments, an insulating region may be formed on the inner wall of the through hole 2411 of the first light-emitting layer group 210 by ion bombardment, or a hole wall insulating layer 2412 may be provided on the hole wall of the through hole 2411, so that the current in the first light-emitting layer group 210 is not easily leaked from the through hole 2411, and the two are not easily crosstalked with each other.

[0156] Optionally, the first pixel transfer electrode 240 may be disposed in the first through hole 2411 by deposition, electroplating, or the like, so that the first pixel transfer electrode 240 is conductively connected to the second pixel power supply electrode 120. Of course, in other embodiments, the first pixel transfer electrode 240 may also be disposed by electroplating, electron beam evaporation, magnetron sputtering, or the like.

[0157] In some embodiments, if the LED display device 1 includes multiple third pixels, the first light-emitting component 200 needs to be deep-etched at the locations of the multiple third pixel power supply electrodes 130 to form multiple second through holes 291 on the first light-emitting layer group 210. The third pixel power supply electrodes 130 are also exposed in the corresponding second through holes 291. Furthermore, in some embodiments, an insulating region can be formed on the inner wall of the second through hole 291 of the first light-emitting layer group 210 by ion bombardment, or an insulating layer can be provided on the wall of the second through hole 291, so that the current in the first light-emitting layer group 210 is not easily leaked from the second through hole 291, and the two are unlikely to cause crosstalk.

[0158] Optionally, the second pixel switching electrode 290 is also disposed in the second through hole 291 , so that the second pixel switching electrode 290 is conductively connected to the third pixel power supply electrode 130 .

[0159] Then, the surfaces of the second interlayer insulating layer 260 and the second pixel transfer electrode 290 may be planarized by ICP etching, grinding, chemical mechanical polishing (CMP) or the like.

[0160] S300: A second light-emitting component is stacked on a side of the first light-emitting component away from the driving substrate, wherein the second light-emitting component includes a second light-emitting layer group and a plurality of third pixel-defining electrodes and at least one fourth pixel-defining electrode located on both sides of the second light-emitting layer group, the third pixel-defining electrode is located on the side of the second light-emitting layer group facing the first light-emitting component, and cooperates with the second light-emitting layer group and the fourth pixel-defining electrode to form a second pixel, the projection of the second pixel in the stacking direction of the first light-emitting component and the second light-emitting component is staggered with the first pixel, and the third pixel-defining electrode is conductively connected to the corresponding second pixel power supply electrode via the first pixel switching electrode.

[0161] Specifically, this step can be divided into the following steps:

[0162] S310: forming a second light-emitting layer group on a second temporary substrate, and forming a plurality of third pixel-defining electrodes on a side of the second light-emitting layer group facing away from the second temporary substrate.

[0163] Optionally, a second temporary substrate 600 is provided, wherein the second temporary substrate 600 may be a substrate made of sapphire, silicon, silicon carbide, ceramic, glass, PCB substrate, or other materials.

[0164] Furthermore, the second light-emitting layer group 310 may be formed on the first temporary substrate 500 by a growth method, and the thickness of the second light-emitting layer group 310 may be controlled.

[0165] Then, a plurality of third pixel-defining electrodes 320 are formed at positions corresponding to the second pixels using an annealing-and-etching process. A third interlayer insulating layer 340 is then applied to the side of the second light-emitting layer group 310 and the third pixel-defining electrodes 320 facing away from the second temporary substrate 600. Two exposure, development, and etching steps are performed on the third interlayer insulating layer 340 at positions corresponding to the plurality of third pixel-defining electrodes 320 to add second pixel extraction electrodes 350, ensuring conductive contact between the second pixel extraction electrodes 350 and the third pixel-defining electrodes 320. The side of the third interlayer insulating layer 340 facing away from the second light-emitting layer group 310 is then ground and polished to make it smooth using a chemical mechanical polishing process.

[0166] Specifically, the details of this step can be referred to step S210, and will not be described in detail in this embodiment and the accompanying drawings.

[0167] S320: transferring the second light-emitting layer group to the side of the first light-emitting layer group away from the driving substrate, and conductively connecting the third pixel defining electrodes to the corresponding first pixel switching electrodes.

[0168] Optionally, plasma activation or chemical treatment can be performed on the side of the first light-emitting layer group 210 that exposes the first pixel transfer electrode 240 and the side of the second light-emitting layer group 310 that exposes the second pixel extraction electrode 350. Then, the second light-emitting layer group 310 can be transferred to the side of the first light-emitting layer group 210 that is away from the driving substrate 100 in a manner that the second pixel extraction electrode 350 faces the first light-emitting layer group 210, and a combining device can be used to accurately align the second pixel extraction electrode 350 and the first pixel transfer electrode 240.

[0169] Furthermore, the second pixel extraction electrode 350 and the first pixel transfer electrode 240 can be heat-bonded by TCB process so that the second pixel extraction electrode 350 and the first pixel transfer electrode 240 are bonded to each other, thereby achieving a high-strength connection between the first light-emitting layer group 210 and the second light-emitting layer group 310.

[0170] Optionally, the second temporary substrate 600 can be removed by grinding, chemical etching or laser lift-off (LLO) to expose the second light-emitting layer group 310, and the first light-emitting layer group 210 can be further reduced to control the thickness of the first light-emitting layer group 210.

[0171] Specifically, a fourth pixel-defining electrode 330 can be formed on the side of the second light-emitting layer group 310 away from the first light-emitting component 200 by electroplating, deposition, etc., and the position of the fourth pixel-defining electrode 330 corresponds to the position of the third pixel-defining electrode 320, and the second pixel-defining electrode 230 forms a conductive connection with the second semiconductor layer 213 of the first light-emitting layer group 210.

[0172] Similarly, the reflectivity of the fourth pixel-defining electrode 330 is lower than that of the third pixel-defining electrode 320, so that the second light-emitting layer group 310 forms a second resonant cavity. Optionally, the number of fourth pixel-defining electrodes 330 can correspond to the number of third pixel-defining electrodes 320 to form a plurality of first pixels.

[0173] Furthermore, a second interconnect electrode 360 ​​may be disposed on a side of the four pixel-defining electrodes 330 facing away from the second light-emitting layer group 310. The second interconnect electrode 360 ​​is conductively connected to the plurality of fourth pixel-defining electrodes 330, so that the second interconnect electrode 360 ​​and the plurality of fourth pixel-defining electrodes 330 can collectively form the N electrode of the second light-emitting layer group 310. The second interconnect electrode 360 ​​may be arranged in a grid pattern around the fourth pixel-defining electrodes 330, with one end disposed at an edge of the second light-emitting layer group 310. This allows the second interconnect electrode 360 ​​to be connected to an external power source to transmit a reference voltage to the fourth pixel-defining electrodes 330, and the fourth pixel-defining electrodes 330 to uniformly receive the reference voltage provided by the second interconnect electrode 360.

[0174] Furthermore, the second interconnection electrode 360 ​​is also disposed at a position staggered with respect to other display pixels, so that the second interconnection electrode 360 ​​is less likely to affect the electrode connection of other display pixels.

[0175] In some embodiments, if the LED display device 1 further includes a third pixel, a third light-emitting component 400 for forming the third pixel needs to be stacked on the side of the second light-emitting layer group 310 away from the first light-emitting layer group 210 .

[0176] S330: Covering and filling a fourth interlayer insulating layer on the side of the second light-emitting layer group away from the first light-emitting layer group.

[0177] Furthermore, a fourth interlayer insulating layer 380 is filled and covered on the side of the second light-emitting layer group 310 away from the first light-emitting layer group 210 . The fourth interlayer insulating layer 380 covers the second light-emitting layer group 310 , the fourth pixel defining electrode 330 and the second interconnecting electrode 360 ​​.

[0178] Optionally, deep etching is performed at a position of the second light-emitting layer group 310 corresponding to the third pixel power supply electrode 130 to form a plurality of third through holes 371 in the second light-emitting layer group 310 , and the plurality of third through holes 371 correspond to the plurality of second through holes 291 formed on the first light-emitting layer group 210 to expose the second pixel switching electrode 290 .

[0179] Furthermore, in some embodiments, an insulating region may be formed on the inner wall of the third through hole 371 of the second light-emitting layer group 310 by ion bombardment, or an insulating layer may be provided on the hole wall of the third through hole 371, so that the current in the second light-emitting layer group 310 is not easily leaked from the third through hole 371, and the two are not easily crosstalked with each other.

[0180] Optionally, the third pixel transfer electrode 370 may be disposed in the third through hole 371 by deposition, electroplating, or the like, so that the second pixel transfer electrode 290 is conductively connected to the third pixel transfer electrode 370 .

[0181] Then, the surfaces of the fourth interlayer insulating layer 380 and the third pixel transfer electrode 370 may be planarized by ICP etching, grinding, chemical mechanical polishing (CMP) or the like.

[0182] S400: A third light-emitting component is stacked and arranged on the side of the second light-emitting component away from the first light-emitting component, wherein the third light-emitting component includes a third light-emitting layer group and a plurality of fifth pixel-defining electrodes and at least one sixth pixel-defining electrode located on both sides of the third light-emitting layer group, the fifth pixel-defining electrode is located on the side of the third light-emitting layer group facing the second light-emitting component, and cooperates with the third light-emitting layer group and the sixth pixel-defining electrode to form a third pixel, the projection of the third pixel in the stacking direction is staggered with the first pixel and the third pixel, and the fifth pixel-defining electrode is conductively connected to the corresponding third pixel power supply electrode via the second pixel switching electrode and the third pixel switching electrode.

[0183] Specifically, a third light-emitting component 400 is provided. The preparation process of the third light-emitting component 400 can be divided into the following steps:

[0184] S410: forming a third light-emitting layer group on a third temporary substrate, and forming a plurality of fifth pixel-defining electrodes on a side of the third light-emitting layer group facing away from the third temporary substrate.

[0185] Similarly, a third temporary substrate 700 is provided. The third temporary substrate 700 can be made of sapphire, silicon, silicon carbide, ceramic, glass, a PCB substrate, or other materials. Furthermore, a third light-emitting layer group 410 can be formed on the first temporary substrate 500 by growth, and the thickness of the third light-emitting layer group 410 can be controlled. Subsequently, a plurality of fifth pixel-defining electrodes 420 are formed at locations corresponding to the third pixels using an annealing followed by etching process.

[0186] Furthermore, a fifth interlayer insulating layer 450 is covered on the side of the third light-emitting layer group 410 and the fifth pixel defining electrode 420 facing away from the third temporary substrate 700, and the fifth interlayer insulating layer 450 is exposed, developed and etched twice at positions corresponding to the multiple fifth pixel defining electrodes 420 to add a third pixel lead-out electrode 460, so that the third pixel lead-out electrode 460 is in conductive contact with the fifth pixel defining electrode 420.

[0187] Then, a chemical mechanical polishing (CMP) process is used to grind and polish the side of the third interlayer insulating layer 340 facing away from the second light-emitting layer group 310 to make it flat.

[0188] Specifically, the details of this step can be referred to step S210, which will not be elaborated in detail in this embodiment.

[0189] S420: transferring the third light-emitting layer group to a side of the second light-emitting layer group away from the first light-emitting layer group, and conductively connecting the fifth pixel defining electrodes to the corresponding third pixel switching electrodes.

[0190] Optionally, plasma activation or chemical treatment can be performed on the side of the second light-emitting layer group 310 where the third pixel transfer electrode 370 is exposed, and on the side of the third light-emitting layer group 410 where the third pixel lead-out electrode 460 is exposed. Then, the third light-emitting layer group 410 can be transferred to the side of the second light-emitting layer group 310 away from the first light-emitting layer group 210 in a manner such that the third pixel lead-out electrode 460 faces the second light-emitting layer group 310, and a combining device can be used to precisely align the third pixel lead-out electrode 460 and the third pixel transfer electrode 370.

[0191] Furthermore, the third pixel extraction electrode 460 and the third pixel transfer electrode 370 can be heat-bonded by TCB process so that the third pixel extraction electrode 460 and the third pixel transfer electrode 370 are bonded to each other, thereby achieving a high-strength connection between the second light-emitting layer group 310 and the third light-emitting layer group 410.

[0192] Optionally, the third temporary substrate 700 can be removed by grinding, chemical etching or laser lift-off (LLO) to expose the third light-emitting layer group 410, and the third light-emitting layer group 410 can be further cut to control the thickness of the third light-emitting layer group 410.

[0193] S430: forming a sixth pixel defining electrode on a side of the third light-emitting layer group away from the second light-emitting component.

[0194] Optionally, a sixth pixel-defining electrode 430 can be formed on the side of the first light-emitting layer group 210 facing away from the driving substrate 100 by electroplating, deposition, etc., and the position of the sixth pixel-defining electrode 430 corresponds to the position of the fifth pixel-defining electrode 420. The sixth pixel-defining electrode 430 forms a conductive connection with the second semiconductor layer 213 of the third light-emitting layer group 410 to form multiple third pixels.

[0195] The reflectivity of the sixth pixel-defining electrode 430 is lower than that of the fifth pixel-defining electrode 420 , so that the third light-emitting layer group 410 forms a resonant cavity.

[0196] Furthermore, a third interconnect electrode 470 may be disposed on a side of the sixth pixel-defining electrode 430 facing away from the third light-emitting layer group 410. The third interconnect electrode 470 is also conductively connected to the plurality of sixth pixel-defining electrodes 430. The third interconnect electrode 470 may be arranged in a grid pattern around the sixth pixel-defining electrode 430, with one end disposed at an edge of the third light-emitting layer group 410. This allows the third interconnect electrode 470 to be connected to an external power source to transmit a reference voltage to the third pixel-defining electrode 320.

[0197] Moreover, the third interconnection electrode 470 is disposed at a position staggered with respect to other display pixels, so that the third interconnection electrode 470 is less likely to affect the electrode connection of other display pixels.

[0198] By the above method, an LED display device 1 having three types of pixels can be obtained, wherein the wavelengths of the first pixel, the second pixel and the third pixel are all different, so that the first pixel, the second pixel and the third pixel can emit light of different colors.

[0199] In other embodiments, after the LED display device 1 is manufactured, other process steps may be added as needed. For example, as shown in FIG15 , a plurality of microlenses may be added to the LED display device 1. The plurality of microlenses are disposed on the side opposite the drive substrate 100 and at positions corresponding to individual pixels to form a microlens array to further control the light pattern of the emitted light.

[0200] In other implementations, other methods may be used to set the common N electrode of the LED display device 1 .

[0201] For example, as shown in Figures 16 to 19, a common N electrode can be provided at the outer periphery of the LED display device 1 to connect to the first light-emitting layer group 210, the second light-emitting layer group 310, and the third light-emitting layer group 410. Specific steps can be described as follows.

[0202] Optionally, a driving substrate 100 is provided. The driving substrate 100 may further include a common power supply electrode 140 .

[0203] Optionally, a first light-emitting component 200 and a second light-emitting component 300 are provided. The first light-emitting component 200 further includes a first common extraction electrode 201, the first light-emitting component 200 further includes a second common extraction electrode 301, the first light-emitting layer group 210 includes a first semiconductor layer 211, a first active layer 212, and a second semiconductor layer 213 stacked in sequence, the first semiconductor layer 211 being located on a side of the first active layer 212 facing the drive substrate 100, and the second light-emitting layer group 310 includes a third semiconductor layer 311, a second active layer 312, and a fourth semiconductor layer 313 stacked in sequence, the third semiconductor layer 311 being located on a side of the second active layer 312 facing the first light-emitting component 200.

[0204] The first common lead-out electrode 201 penetrates the first semiconductor layer 211 and the first active layer 212, and is conductively connected to the second semiconductor layer 213 and / or the second pixel-defining electrode 230; the second common lead-out electrode 301 penetrates the third semiconductor layer 311 and the second active layer 312, and is conductively connected to the fourth semiconductor layer 313 and / or the fourth pixel-defining electrode 330.

[0205] Optionally, as shown in FIG15 , the process of preparing the second light-emitting component 300 may refer to step S210 , but further includes the following steps after step S213 :

[0206] S510: Disposing a first common extraction electrode on a side of the first light-emitting layer group facing away from the first temporary substrate.

[0207] Optionally, after forming the plurality of first pixel-defining electrodes 220, an etching process is performed at locations corresponding to the first common extraction electrode 201, penetrating the first semiconductor layer 211 and the first active layer 212 to form a first recessed region 214. The first recessed region 214 can be ring-shaped on the side of the first semiconductor layer 211 facing away from the active layer, surrounding the region of each first pixel electrode. Furthermore, the depth of the first recessed region 214 can be less than the thickness of the first light-emitting layer group 210, and the first recessed region 214 can expose the second semiconductor layer 213.

[0208] Furthermore, a covering first interlayer insulating layer 250 may be provided, and holes may be punched, deep etched, or the like may be performed at positions corresponding to the first recessed area 214 and the positions of the plurality of first pixel defining electrodes 220 to form first via holes 2711 exposing the plurality of first pixel defining electrodes 220 and holes corresponding to the first common lead-out electrode 201. Subsequently, the first common lead-out electrode 201 and the plurality of first pixel lead-out electrodes 270 electrically connected to the second semiconductor layer 213 may be provided by deposition or electroplating.

[0209] Alternatively, in other embodiments, the first common extraction electrode 201 may be disposed in the first recessed area 214 so as to be conductively connected to the second semiconductor layer 213 and / or the second pixel defining electrode 230 , and then the first interlayer insulating layer 250 may be filled.

[0210] Then, a chemical mechanical polishing (CMP) process is performed to grind and polish the side of the third interlayer insulating layer 340 facing away from the second light emitting layer group 310 to make it flat.

[0211] When preparing the second light-emitting assembly 300, a second common extraction electrode 301 is also provided on the side of the second light-emitting layer group 310 facing away from the second temporary substrate. This step can be referred to as step S510 and will not be described in detail in this embodiment.

[0212] When preparing the third light-emitting assembly 400, a third common extraction electrode 440 can also be provided on the side of the third light-emitting layer group 410 facing away from the third temporary substrate. This step can also refer to step S510 and will not be described in detail in this embodiment.

[0213] Therefore, in some embodiments, as shown in FIG17 , the step of stacking the first light-emitting component 200 on the driving substrate 100 further includes:

[0214] S511: conductively connecting the first common extraction electrode to the common power supply electrode to form a first common switching electrode, wherein the first common switching electrode passes through the first light-emitting layer group and is conductively connected to the common power supply electrode.

[0215] Specifically, when the first light-emitting layer group 210 is transferred to the side of the first light-emitting layer group 210 facing away from the driving substrate 100, the first common extraction electrode 201 is aligned with the common power supply electrode 140, and the first pixel defining electrodes 220 are aligned with the first pixel power supply electrodes 110 respectively. Then, the first pixel extraction electrode 270 and the first pixel power supply electrode 110, and the first common extraction electrode 201 and the common power supply electrode 140 can be further heat-bonded (or bonded at room temperature) using a TCB process, so that the first pixel extraction electrode 270 and the first pixel power supply electrode 110 are bonded to each other, and the first common extraction electrode 201 and the common power supply electrode 140 are bonded to each other.

[0216] Furthermore, the first temporary substrate 500 can be removed by grinding, chemical etching or laser lift-off (LLO) to expose the first light-emitting layer group 210, and the first light-emitting layer group 210 can be further cut to a desired thickness.

[0217] Optionally, a second pixel-defining electrode 230 can be formed, covering the second interlayer insulating layer 260. In this case, the second pixel-defining electrode 230 serves only as a reflector to form a resonant cavity and has no electrical connection. Deep etching can then be performed on the first light-emitting layer group 210 at locations corresponding to the second common extraction electrode 301 and the plurality of second pixel power supply electrodes 120. This forms a plurality of holes corresponding to the second common extraction electrode 301 and a plurality of through-holes 2411 in the first light-emitting layer group 210. The holes corresponding to the second common extraction electrode 301 penetrate the first light-emitting layer group 210 and expose the common power supply electrode 140. The through-holes 2411 expose the second pixel power supply electrodes 120.

[0218] Optionally, a first insulating layer 2023 is added to the inner wall of the annular hole, or the inner wall of the annular hole is ion bombarded to form an insulating region. Furthermore, a first common switching electrode 202 can be added to the annular hole and a first pixel switching electrode 240 can be disposed in the through hole 2411 by electroplating, deposition, or the like, so that the first common switching electrode 202 is conductively connected to the common power supply electrode 140, and the first pixel switching electrode 240 is conductively connected to the second pixel power supply electrode 120.

[0219] If the LED display device 1 includes a third light-emitting assembly 400, which may include a third common extraction electrode 440, deep etching can be performed at the position corresponding to the third common extraction electrode 440 and the position corresponding to the third pixel in the first light-emitting assembly 200 to expose the common power supply electrode 140 and the third pixel power supply electrode 130, respectively. A corresponding insulating layer can then be provided on the inner walls of all the holes. Furthermore, a first transfer electrode portion 4411 and a second pixel transfer electrode 290 can be added to the corresponding holes by electroplating, deposition, or other methods, respectively, so that the first transfer electrode portion 4411 is conductively connected to the common power supply electrode 140, and the second pixel transfer electrode 290 is conductively connected to the third pixel power supply electrode 130.

[0220] Optionally, as shown in FIG18 , the step of stacking the second light-emitting component 300 on a side of the first light-emitting component 200 away from the driving substrate 100 includes:

[0221] S521: Conductively connect the second common lead-out electrode to the first common switching electrode.

[0222] Specifically, the second light-emitting layer group 310 is transferred to the side of the first light-emitting layer group 210 facing away from the driving substrate 100, with the second common extraction electrode 301 aligned with the first common transfer electrode 202 and the third pixel-defining electrode 320 corresponding to the first pixel transfer electrode 240. Similarly, a TCB process can then be further used to heat-bond and electrically connect the third pixel-defining electrode 320 to the first pixel transfer electrode 240, and the second common extraction electrode 301 to the first common transfer electrode 202.

[0223] Furthermore, the second temporary substrate 600 can be removed by grinding, chemical etching or laser lift-off (LLO) to expose the second light-emitting layer group 310, and the second light-emitting layer group 310 can be further cut to a desired thickness.

[0224] If the LED display device 1 includes a third light-emitting component 400, deep etching can be performed at the position of the second light-emitting component 300 corresponding to the third common extraction electrode 440 and the position corresponding to the third pixel to form a hole exposing the first transfer electrode portion 4411 and the second pixel transfer electrode 290, and a corresponding insulating layer can be added to the inner wall of the hole. Then, the second transfer electrode portion 4412 and the third pixel transfer electrode 370 are added to the corresponding hole by electroplating, deposition, etc., so that the second transfer electrode portion 4412 is conductively connected to the first transfer electrode portion 4411, and the third pixel transfer electrode 370 is conductively connected to the second pixel transfer electrode 290.

[0225] Optionally, the specific steps of bonding the third common lead-out electrode 440 in the third light-emitting component 400 to the second transfer electrode portion 4412 and bonding the third pixel transfer electrode 370 to the fifth pixel defining electrode 420 can refer to step S400, step S521 and Figure 19, and this embodiment will not be described in detail here.

[0226] By using the above method, the common N electrode of each light-emitting component can be set at the edge position of each light-emitting component, so that the light-emitting surface of each light-emitting component is more neat and flat, thereby improving the light-emitting efficiency of the LED display device 1, and reducing the difficulty of preparing the LED display device 1 and improving the yield rate.

[0227] Likewise, in other embodiments, a functional layer may be added to the side of the LED display device 1 away from the driving substrate 100 , for example, a microlens may be added to each pixel electrode.

[0228] In summary, the present application stacks multiple layers of first light-emitting components 200 and second light-emitting components 300 on the driver substrate 100 to arrange the first and second pixels on different planes, thereby reducing the difficulty of manufacturing a high-density pixel array integrated within the same plane. This reduces the difficulty of manufacturing the LED display device 1 while ensuring the display pixel density of the LED display device 1. Furthermore, this reduces the risk of damage to the LED display device 1 due to excessive etching within the same plane, thereby improving the yield rate of the finished LED chip.

[0229] The above are merely embodiments of the present application and are not intended to limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the present application specification and drawings, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. An LED display device, characterized in that: The LED display device comprises: A driving substrate, comprising a plurality of first pixel power supply electrodes and a plurality of second pixel power supply electrodes; A first light-emitting component comprises a first light-emitting layer group, a plurality of first pixel defining electrodes, at least one second pixel defining electrode and a plurality of first pixel switching electrodes, wherein the first pixel defining electrode and the second pixel defining electrode are located on both sides of the first light-emitting layer group, the first pixel defining electrode is located on a side of the first light-emitting layer group facing the driving substrate, and cooperates with the first light-emitting layer group and the second pixel defining electrode to form a first pixel, wherein the first pixel defining electrodes are respectively conductively connected to the corresponding first pixel power supply electrodes, and the first pixel switching electrode runs through the first light-emitting layer group; The second light-emitting component is stacked on the side of the first light-emitting component away from the driving substrate, and includes a second light-emitting layer group and a plurality of third pixel-defining electrodes and at least one fourth pixel-defining electrode located on both sides of the second light-emitting layer group. The third pixel-defining electrode is located on the side of the second light-emitting layer group facing the first light-emitting component, and cooperates with the second light-emitting layer group and the fourth pixel-defining electrode to form a second pixel. The projection of the second pixel in the stacking direction of the first light-emitting component and the second light-emitting component is staggered with the first pixel. The third pixel-defining electrode is conductively connected to the corresponding second pixel power supply electrode via the corresponding first pixel switching electrode.

2. The LED display device according to claim 1, characterized in that: In the direction perpendicular to the stacking direction, the distance from the edge of the portion of the first pixel switching electrode located in the first light-emitting layer group to the edge of the first pixel defining electrode is greater than or equal to one quarter of the size of the first pixel defining electrode along the vertical direction, and / or In the direction perpendicular to the stacking direction, the distance from the edge of the first pixel switching electrode located in the first light-emitting layer group to the edge of the second pixel defining electrode is greater than or equal to one quarter of the size of the second pixel defining electrode along the vertical direction.

3. The LED display device according to claim 1, characterized in that: The first light-emitting layer group is provided with an insulating region formed by ion bombardment at the periphery of the first pixel switching electrode; or The first light-emitting layer group includes a first semiconductor layer, a first active layer, and a second semiconductor layer stacked in sequence, the first semiconductor layer is located on a side of the first active layer facing the drive substrate, and the thickness and resistivity of the first semiconductor layer are set so that when the LED display device works normally, the lateral current diffusion length of the first semiconductor layer satisfies Ls≤1 / 2×D1, wherein Ls is the lateral current diffusion length of the first semiconductor layer, and D1 is the shortest distance between an edge of a portion of the first pixel switching electrode located in the first light-emitting layer group and an edge of an adjacent first pixel defining electrode; or A through hole is arranged on the first light-emitting layer group, the first pixel switching electrode passes through the through hole, and a hole wall insulating layer is arranged on the hole wall of the through hole.

4. The LED display device according to claim 1, characterized in that: The first light-emitting component is fixed on the driving substrate by metal bonding or hybrid bonding, and the second light-emitting component is fixed on a side of the first light-emitting component away from the driving substrate by metal bonding or hybrid bonding.

5. The LED display device according to claim 4, characterized in that: The first light-emitting component further includes a first interlayer insulating layer, a second interlayer insulating layer and a first pixel extraction electrode, the first interlayer insulating layer covers a side of the first light-emitting layer group facing the drive substrate and the first pixel defining electrode, one end of the first pixel extraction electrode is conductively connected to the first pixel defining electrode, the other end of the first pixel extraction electrode is exposed from the first interlayer insulating layer toward the drive substrate, the first pixel extraction electrode and the first pixel power supply electrode are bonded to each other, the second interlayer insulating layer covers a side of the first light-emitting layer group facing away from the drive substrate and the second pixel defining electrode, and the first pixel switching electrode further penetrates the first interlayer insulating layer and the second interlayer insulating layer; The second light-emitting component further includes a third interlayer insulating layer and a second pixel extraction electrode, the third interlayer insulating layer covers the side of the second light-emitting layer group facing the first light-emitting layer group and the third pixel defining electrode, one end of the second pixel extraction electrode is conductively connected to the third pixel defining electrode, the other end of the second pixel extraction electrode is exposed from the third interlayer insulating layer toward the side of the first light-emitting layer group, and the second pixel extraction electrode and the first pixel switching electrode are bonded to each other.

6. The LED display device according to claim 5, characterized in that: The first pixel power supply electrode comprises a first pixel power supply portion and a second pixel power supply portion connected to each other, the first pixel extraction electrode comprises a first pixel extraction portion and a second pixel extraction portion connected to each other, in a direction perpendicular to the stacking direction, the size of the first pixel power supply portion is larger than the size of the second pixel power supply portion, the size of the first pixel extraction portion is larger than the size of the second pixel extraction portion, the first pixel power supply portion and the first pixel extraction portion are bonded to each other, and the second pixel power supply portion is conductively connected to the first pixel defining electrode; The second pixel lead-out electrode includes a third pixel lead-out portion and a fourth pixel lead-out portion connected to each other, the first pixel switching electrode includes a first pixel switching portion and a second pixel switching portion connected to each other, in a direction perpendicular to the stacking direction, a size of the first pixel switching portion is larger than a size of the second pixel switching portion, a size of the third pixel lead-out portion is larger than a size of the fourth pixel lead-out portion, the first pixel switching portion and the third pixel lead-out portion are bonded to each other, and the fourth pixel lead-out portion is conductively connected to the third pixel defining electrode.

7. The LED display device according to claim 6, characterized in that: Conductive connections are formed between the second pixel lead-out portion and the first pixel defining electrode, between the fourth pixel lead-out portion and the third pixel defining electrode, and between the second pixel switching portion and the second pixel power supply electrode respectively by deposition.

8. The LED display device according to claim 1, characterized in that: The number of the second pixel defining electrodes corresponds to the number of the first pixel defining electrodes, the first light emitting component further comprises a first interconnecting electrode conductively connecting the plurality of the second pixel defining electrodes, and / or, The number of the fourth pixel defining electrodes corresponds to the number of the third pixel defining electrodes, and the second light-emitting component further includes a second interconnecting electrode conductively connecting the plurality of the fourth pixel defining electrodes.

9. The LED display device according to claim 8, characterized in that: The reflectivity of the second pixel defining electrode is less than the reflectivity of the first pixel defining electrode, and the thickness of the first light-emitting layer group is controlled to form a first resonant cavity that emits light from one side of the second pixel defining electrode, and the first interconnecting electrodes are arranged in a grid shape and partially cover the second pixel defining electrode along the edge of the second pixel defining electrode; and / or The reflectivity of the fourth pixel defining electrode is less than the reflectivity of the third pixel defining electrode, and the thickness of the second light emitting layer group is controlled to form a second resonant cavity that emits light from one side of the fourth pixel defining electrode, and the second interconnecting electrodes are arranged in a grid shape and are partially arranged along the edge of the fourth pixel defining electrode. The fourth pixel defining electrode is covered.

10. The LED display device according to claim 1, characterized in that: The driving substrate further includes a common power supply electrode, the first light-emitting component further includes a first common extraction electrode and a first common switching electrode, the second light-emitting component further includes a second common extraction electrode, the first light-emitting layer group includes a first semiconductor layer, a first active layer and a second semiconductor layer stacked in sequence, the first semiconductor layer is located on the side of the first active layer facing the driving substrate, the second light-emitting layer group includes a third semiconductor layer, a second active layer and a fourth semiconductor layer stacked in sequence, the third semiconductor layer is located on the side of the second active layer facing the first light-emitting component, wherein the first common extraction electrode penetrates the first semiconductor layer and the first active layer, and is conductively connected to the second semiconductor layer and / or the second pixel defining electrode, the first common switching electrode penetrates the first light-emitting layer group, the first common extraction electrode and the first common switching electrode are conductively connected to the common power supply electrode respectively, the second common extraction electrode penetrates the third semiconductor layer and the second active layer, and is conductively connected to the fourth semiconductor layer and / or the fourth pixel defining electrode, and the second common extraction electrode is conductively connected to the common power supply electrode via the first common switching electrode.

11. The LED display device according to claim 10, characterized in that: The first common lead-out electrode comprises a first common lead-out portion and a second common lead-out portion connected to each other, the first common lead-out portion is larger than the second common lead-out portion in a direction perpendicular to the stacking direction, the first common lead-out portion is bonded to the common power supply electrode, and the second common lead-out portion is conductively connected to the second semiconductor layer and / or the second pixel defining electrode; The second common lead-out electrode includes a third common lead-out portion and a fourth common lead-out portion connected to each other, and in a direction perpendicular to the stacking direction, a size of the third common lead-out portion is larger than a size of the fourth common lead-out portion, the third common lead-out portion is bonded to the first common transfer electrode, and the fourth common lead-out portion is conductively connected to the fourth semiconductor layer and / or the fourth pixel defining electrode.

12. The LED display device according to claim 11, characterized in that: The first common transfer electrode includes a first common transfer portion and a second common transfer portion connected to each other. In a direction perpendicular to the stacking direction, a size of the first common transfer portion is larger than a size of the second common transfer portion. The third common lead-out portion is bonded to the first common transfer portion, and the second common transfer portion is conductively connected to the common power supply electrode.

13. The LED display device according to claim 10, characterized in that: The common power supply electrode, the first common extraction electrode, the first common switching electrode and the second common extraction electrode are arranged in a ring shape surrounding the peripheries of the plurality of first pixel defining electrodes and the plurality of second pixel defining electrodes.

14. The LED display device according to claim 1, characterized in that: The wavelength of the output light of the first light-emitting component is greater than the wavelength of the output light of the second light-emitting component.

15. The LED display device according to claim 1, characterized in that: The driving substrate further includes a plurality of third pixel power supply electrodes, the first light-emitting component further includes a second pixel switching electrode penetrating the first light-emitting layer group, and the second light-emitting component further includes a third pixel switching electrode penetrating the second light-emitting layer group and docking with the second pixel switching electrode; The LED display device further includes a third light-emitting component, which is stacked on the side of the second light-emitting component away from the first light-emitting component, and includes a third light-emitting layer group and a plurality of fifth pixel-defining electrodes and at least one sixth pixel-defining electrode located on both sides of the third light-emitting layer group. The fifth pixel-defining electrode is located on the side of the third light-emitting layer group facing the second light-emitting component, and cooperates with the third light-emitting layer group and the sixth pixel-defining electrode to form a third pixel. The projection of the third pixel in the stacking direction is staggered with the first pixel and the third pixel. The fifth pixel-defining electrode is conductively connected to the corresponding third pixel power supply electrode via the second pixel switching electrode and the third pixel switching electrode.

16. The LED display device according to claim 15, characterized in that: The third light-emitting component is fixed to the side of the second light-emitting component away from the first light-emitting component by metal bonding or hybrid bonding. The output light wavelength of the first light-emitting component is greater than the output light wavelength of the second light-emitting component, and the output light wavelength of the second light-emitting component is greater than the output light wavelength of the third light-emitting component.

17. A method for manufacturing an LED display device, characterized in that: The manufacturing method comprises: Providing a driving substrate, wherein the driving substrate comprises a plurality of first pixel power supply electrodes and a plurality of second pixel power supply electrodes; A first light-emitting component is stacked on the driving substrate, wherein the first light-emitting component includes a first light-emitting layer group, a plurality of first pixel defining electrodes, at least one second pixel defining electrode and a first pixel switching electrode, wherein the first pixel defining electrode and the second pixel defining electrode are located on both sides of the first light-emitting layer group, the first pixel defining electrode is located on the side of the first light-emitting layer group facing the driving substrate, and cooperates with the first light-emitting layer group and the second pixel defining electrode to form a first pixel, wherein the first pixel defining electrode is respectively conductively connected to the corresponding first pixel power supply electrode, and the first pixel switching electrode runs through the first light-emitting layer group; A second light-emitting component is stacked on the side of the first light-emitting component away from the driving substrate, wherein the second light-emitting component includes a second light-emitting layer group and a plurality of third pixel-defining electrodes and at least one fourth pixel-defining electrode located on both sides of the second light-emitting layer group, the third pixel-defining electrode is located on the side of the second light-emitting layer group facing the first light-emitting component, and cooperates with the second light-emitting layer group and the fourth pixel-defining electrode to form a second pixel, the projection of the second pixel in the stacking direction of the first light-emitting component and the second light-emitting component is staggered with the first pixel, and the third pixel-defining electrode is conductively connected to the corresponding second pixel power supply electrode via the first pixel switching electrode.

18. The manufacturing method according to claim 17, characterized in that: The driving substrate further includes a plurality of third pixel power supply electrodes, the first light-emitting component further includes a second pixel switching electrode penetrating the first light-emitting layer group, and the second light-emitting component further includes a third pixel switching electrode penetrating the second light-emitting layer group and connecting to the second pixel switching electrode; The method further comprises: A third light-emitting component is stacked on the side of the second light-emitting component away from the first light-emitting component, wherein the third light-emitting component includes a third light-emitting layer group and a plurality of fifth pixel-defining electrodes and at least one sixth pixel-defining electrode located on both sides of the third light-emitting layer group, the fifth pixel-defining electrode is located on the side of the third light-emitting layer group facing the second light-emitting component, and cooperates with the third light-emitting layer group and the sixth pixel-defining electrode to form a third pixel, the projection of the third pixel in the stacking direction is staggered with the first pixel and the third pixel, and the fifth pixel-defining electrode is conductively connected to the corresponding third pixel power supply electrode via the second pixel switching electrode and the third pixel switching electrode.

19. The manufacturing method according to claim 17, characterized in that: The step of stacking the first light-emitting component on the driving substrate comprises: forming a first light-emitting layer group on a first temporary substrate, and forming a plurality of first pixel defining electrodes on a side of the first light-emitting layer group facing away from the first temporary substrate; Transferring the first light-emitting layer group to the driving substrate, and conductively connecting the first pixel defining electrodes to the corresponding first pixel power supply electrodes respectively; Forming the second pixel defining electrode on the side of the first light-emitting layer group away from the driving substrate and forming the first pixel switching electrode penetrating the first light-emitting layer group and conductively connected to the second pixel power supply electrode; The step of stacking the second light-emitting component on the side of the first light-emitting component away from the driving substrate comprises: forming a second light-emitting layer group on a second temporary substrate, and forming a plurality of third pixel defining electrodes on a side of the second light-emitting layer group facing away from the second temporary substrate; Transferring the second light-emitting layer group to the side of the first light-emitting layer group away from the driving substrate, and conductively connecting the third pixel defining electrodes to the corresponding first pixel switching electrodes respectively; The fourth pixel defining electrode is formed on a side of the second light-emitting layer group away from the first light-emitting component.

20. The manufacturing method according to claim 19, characterized in that: The driving substrate further includes a plurality of third pixel power supply electrodes, and the step of stacking the first light-emitting component on the driving substrate further includes: forming a second pixel switching electrode penetrating through the first light-emitting layer group and conductively connected to the third pixel power supply electrode; The step of stacking the second light-emitting component on the side of the first light-emitting component away from the driving substrate comprises: forming a third pixel switching electrode penetrating through the second light-emitting layer group and connected to the second pixel switching electrode; The method further comprises: forming a third light-emitting layer group on a third temporary substrate, and forming a plurality of fifth pixel-defining electrodes on a side of the third light-emitting layer group away from the third temporary substrate; Transferring the third light-emitting layer group to the side of the second light-emitting layer group away from the first light-emitting layer group, and conductively connecting the fifth pixel defining electrodes to the corresponding third pixel switching electrodes respectively; A sixth pixel defining electrode is formed on a side of the third light-emitting layer group away from the second light-emitting component.

21. The manufacturing method according to claim 17, characterized in that: The driving substrate further includes a common power supply electrode, the first light-emitting component further includes a first common extraction electrode, the first light-emitting component further includes a second common extraction electrode, the first light-emitting layer group includes a first semiconductor layer, a first active layer and a second semiconductor layer stacked in sequence, the first semiconductor layer is located on a side of the first active layer facing the driving substrate, the second light-emitting layer group includes a third semiconductor layer, a second active layer and a fourth semiconductor layer stacked in sequence, the third semiconductor layer is located on a side of the second active layer facing the first light-emitting component, wherein the first common extraction electrode penetrates the first semiconductor layer and the first active layer, and is conductively connected to the second semiconductor layer and / or the second pixel defining electrode, and the second common extraction electrode penetrates the third semiconductor layer and the second active layer, and is conductively connected to the fourth semiconductor layer and / or the fourth pixel defining electrode; The step of stacking the first light-emitting component on the driving substrate further includes: Conductively connecting the first common extraction electrode to the common power supply electrode to form a first common switching electrode, wherein the first common switching electrode penetrates the first light-emitting layer group and is conductively connected to the common power supply electrode; The step of stacking the second light-emitting component on the side of the first light-emitting component away from the driving substrate comprises: The second common lead-out electrode is conductively connected to the first common switching electrode.

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