Manufacturing method for storage device, and storage device

Abstract

Disclosed are a manufacturing method for a storage device, and a storage device. The manufacturing method comprises: providing a semiconductor substrate, which comprises a base and a hard mask layer on the base; forming a plurality of first recesses in an active region of the base from the hard mask layer, some of the first recesses being located in a storage region and the rest being located in a lead-out region, and the portion of each first recess in the base being defined as a substrate recess; forming gate insulating layers and semi-floating gates at the bottoms of the substrate recesses, one portion of each semi-floating gate being in contact with the base, and the other portion thereof being isolated from the base by means of the corresponding gate insulating layer; and respectively forming inter-gate dielectric layers and first gate layers in the first recesses, forming control gates of storage units in the first recesses in the storage region, and forming lead-out wires of the storage units in the first recesses of in the lead-out region. That is, according to the present application, the lead-out region can be in contact with the outside, solving the problem of voltage drop caused by large buried gate resistance.

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