Pressure sensitive transducer chip, pressure sensitive transducer, and electronic device

Abstract

Embodiments of the present application relate to the technical field of transducers. Disclosed are a pressure sensitive transducer chip, a pressure sensitive transducer, and an electronic device. The pressure sensitive transducer chip comprises a base, a transducing assembly, a first stop assembly, and a second stop assembly. The transducing assembly comprises a cantilever. The first stop assembly comprises a first stop part and a first stop block. The first stop part is connected to the cantilever, and the first stop block is connected to the base. The first stop part is partially arranged above the first stop block, and the first stop part and the first stop block are partially overlapped. The second stop assembly comprises a second stop part and a second stop block. The second stop part is connected to the base, and the second stop block is connected to the cantilever. A protruding part of the second stop block protrudes out of the cantilever. The second stop part is partially arranged above the protruding part, and the second stop part and the protruding part are partially overlapped. The first stop assembly and the second stop assembly limit the movement range of the cantilever in a first direction, thereby avoiding large movement of the cantilever, and improving the impact resistance of the pressure sensitive transducer chip in the first direction (Z direction) and the reliability of the pressure sensitive transducer chip.

Description

Pressure sensing chip, pressure sensing sensor and electronic device

[0001] This application claims priority to a Chinese patent application filed on September 4, 2023, with application number 202311136891.9 and application name “Pressure sensing chip, pressure sensing sensor and electronic device”, the entire contents of which are incorporated by reference into this application. Technical Field

[0002] The embodiments of the present application relate to the field of sensor technology, and in particular to a piezoelectric or piezoresistive sensor chip (collectively referred to as a pressure sensing chip in the embodiments of the present application), a piezoelectric or piezoresistive sensor (collectively referred to as a pressure sensing sensor in the embodiments of the present application) and an electronic device. Background Art

[0003] As electronic devices become increasingly versatile, accelerometers / accelerometers (ACCs) are increasingly widely used in these devices. Micro-electromechanical systems (MEMS) accelerometers are a form of accelerometer. These MEMS accelerometers utilize micromachining techniques on silicon substrates to limit their size to millimeters or even micrometers, providing a viable path for the application of miniature accelerometers in end devices.

[0004] MEMS ACCs include capacitive MEMS ACCs, piezoelectric or piezoresistive MEMS ACCs (collectively referred to as pressure-sensitive MEMS ACCs in this application embodiment). Pressure-sensitive MEMS ACCs can be designed with multiple sensing directions. When a pressure-sensitive MEMS accelerometer is subjected to a large impact in the Z direction, its internal structure is prone to fracture or tearing, causing the pressure-sensitive MEMS accelerometer to fail.

[0005] Summary of the Invention

[0006] The embodiments of the present application provide a pressure sensing chip, a pressure sensing sensor, and an electronic device for improving the resistance of a pressure sensing chip (especially a pressure sensing chip including a cantilever / thin film structure, etc.) to impact along the thickness direction of its cantilever / thin film structure, thereby improving the reliability of the pressure sensing chip.

[0007] To achieve the above objectives, the present invention adopts the following technical solutions:

[0008] In a first aspect, a pressure sensing chip is provided, comprising: a base, at least one sensing component, at least one first stop component, and at least one second stop component. The sensing component comprises a cantilever and a stress detection unit. The cantilever is connected to the base, and the stress detection unit is located on at least one side surface of the cantilever. The stress detection unit is made of a piezoelectric material or a piezoresistive material. The first stop component comprises a first stop portion and a first stop block. The first stop portion is connected to the cantilever. The first stop block is connected to the base. Along a first direction, the first stop portion is spaced above the first stop block. In an orthographic projection onto a reference plane, the first stop portion and the first stop block partially overlap. The first direction is the thickness direction of the cantilever. The first direction is perpendicular to the reference plane. The second stop component comprises a second stop portion and a second stop block. The second stop portion is connected to the base, and the second stop block is connected to the cantilever. The second stop block has a protrusion, and in an orthographic projection onto the reference plane, the protrusion protrudes from the cantilever. Along the first direction, the second stop portion is spaced apart and arranged above the protruding portion. In an orthographic projection onto the reference plane, the second stop portion and the protruding portion partially overlap.

[0009] Some embodiments of the present application provide a pressure sensing chip, which is provided with a first stop portion connected to the cantilever, a first stop block connected to the base, and a spatial position relationship between the first stop portion and the first stop block, so that the first stop portion and the first stop block have both partial overlap and a certain distance in the first direction. When the pressure sensing chip is subjected to a large upward impact along the first direction, the impact will be transmitted to the cantilever through the base. At this time, the first stop block can be used to stop the first stop portion, so that the downward movement of the cantilever and the second stop block along the first direction stops on the upper surface of the first stop block. In other words, the embodiments of the present application can limit the downward movement range of the cantilever and the second stop block along the first direction under the mutual cooperation of the first stop portion and the first stop block, thereby protecting the cantilever and preventing the cantilever from moving significantly due to the impact, thereby preventing the cantilever from being torn off.

[0010] Furthermore, by providing a second stop portion connected to the base and a second stop block connected to the cantilever, and limiting the spatial positional relationship between the second stop portion and the second stop block, the second stop portion and the second stop block are both partially overlapped and spaced apart in the first direction. When the pressure sensing chip is subjected to a large downward impact along the first direction, the impact will be transmitted to the cantilever through the base. At this time, the second stop portion can be used to stop the second stop block, so that the upward movement of the cantilever and the second stop block along the first direction stops at the lower surface of the second stop portion. In other words, the embodiment of the present application can limit the upward movement range of the cantilever and the second stop block along the first direction under the mutual cooperation of the second stop portion and the second stop block, thereby protecting the cantilever and preventing the cantilever from moving significantly due to the impact, thereby preventing the cantilever from being torn apart.

[0011] This can not only improve the resistance of the pressure sensing chip to impacts in the upward direction along the first direction, but also improve the resistance of the pressure sensing chip to impacts in the downward direction along the first direction, thereby avoiding failure of the pressure sensing chip due to breakage of the cantilever, improving the reliability of the pressure sensing chip, and improving the reliability of the pressure sensor using the pressure sensing chip.

[0012] In a possible embodiment of the first aspect, the base includes a stacked support layer, at least one isolation layer, and a functional layer. The cantilever, the first stopper, the second stopper, and the functional layer are disposed in the same layer. Alternatively, the first stopper, the second stopper, and the support layer are disposed in the same layer. This simplifies the pressure sensor chip fabrication process and avoids increasing the thickness of the pressure sensor chip.

[0013] In a possible embodiment of the first aspect, the base includes a stacked support layer, a multi-layered isolation layer, and a functional layer. The cantilever, the first stopper, the second stopper, and the functional layer are co-located. Alternatively, the first stopper is co-located with at least the support layer. Alternatively, the second stopper is co-located with a target isolation layer in the multi-layered isolation layer, with at least one isolation layer interposed between the target isolation layer and the functional layer. This facilitates simplifying the pressure sensor chip fabrication process and avoids increasing the thickness of the pressure sensor chip.

[0014] In a possible implementation manner of the first aspect, in an orthographic projection onto the reference plane, the second stop portion protrudes from the functional layer. In this case, the second stop portion can serve as a second stop beam.

[0015] In a possible embodiment of the first aspect, a portion of the functional layer forms a second stopper. The pressure sensor chip has a first notch, which is located below the second stopper. A portion of the second stopper extends into the first notch. In this case, the second stopper can serve as a second stopper membrane. This allows for efficient utilization of the internal space of the pressure sensor chip and avoids increasing the area of ​​the pressure sensor chip.

[0016] In a possible embodiment of the first aspect, a portion of the cantilever forms a first stop. The pressure sensor chip further has a second notch, located below the first stop. A portion of the first stop block extends into the second notch. In this case, the first stop can serve as a first stop film. This allows for efficient utilization of the internal space of the pressure sensor chip and avoids increasing the area of ​​the pressure sensor chip.

[0017] In a possible implementation of the first aspect, in an orthographic projection onto a reference plane, a portion of the first stop portion that overlaps with the first stop block is provided with at least one connecting structure. The connecting structure connects the gap between the first stop portion and the first stop block. And / or, in an orthographic projection onto a reference plane, a portion of the second stop portion that overlaps with the second stop block is provided with at least one connecting structure. The connecting structure connects the gap between the second stop portion and the second stop block. In the process of preparing the pressure sensing chip, it is convenient for the fluid (such as corrosive liquid or corrosive gas) to corrode the film layer below the first stop portion and / or the second stop portion through the connecting structure, and it is convenient for the fluid to flow out.

[0018] In a possible implementation of the first aspect, the pressure sensing chip further includes: a first damping layer. The first damping layer is located on the lower surface of the first stop portion, and a gap is provided between the first damping layer and the first stop block. And / or, the first damping layer is located on the upper surface of the first stop block, and a gap is provided between the first damping layer and the first stop portion. When the pressure sensing chip is subjected to a large upward impact along the first direction, the cantilever has a large relative acceleration relative to the base, and the cantilever moves downward rapidly along the first direction. At this time, the first damping layer may contact the first stop block, or the first damping layer may contact the first stop portion, so as to cushion the movement of the cantilever, thereby further protecting the cantilever.

[0019] In a possible implementation of the first aspect, the pressure sensing chip further includes: a second damping layer. The second damping layer is located on the lower surface of the second stop portion, and there is a gap between the second damping layer and the second stop block. And / or, the second damping layer is located on the upper surface of the second stop block, and there is a gap between the second damping layer and the second stop portion. When the pressure sensing chip is subjected to a large impact downward along the first direction, the cantilever has a large relative acceleration relative to the base, and the cantilever moves rapidly upward along the first direction. At this time, the second damping layer can contact the second stop block, or the second damping layer can contact the second stop portion to cushion the movement of the cantilever, thereby further protecting the cantilever.

[0020] In possible implementations of the first aspect, the cantilever can be replaced with a rod structure, a plate structure, or a membrane structure. Any of the rod structure, the semi-structure, and the membrane structure is connected to at least one side of the base. Alternatively, the membrane structure covers at least a portion of the cavity defined by the base.

[0021] In a second aspect, a pressure sensor is provided, comprising: a pressure sensor chip and a dedicated integrated circuit chip electrically connected to the pressure sensor chip. The pressure sensor chip comprises the pressure sensor chip as described in any embodiment of the first aspect.

[0022] In a third aspect, an electronic device is provided, comprising: a circuit board and a pressure sensor electrically connected to the circuit board. The pressure sensor is the pressure sensor as described in the second aspect.

[0023] The technical effects brought about by the second and third aspects can be referred to the technical effects brought about by the different design methods in the first aspect, and will not be repeated here. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] FIG1 is a structural diagram of an electronic device provided in an embodiment of the present application;

[0025] FIG2 is a partial structural diagram of an electronic device provided in an embodiment of the present application;

[0026] FIG3 is a partial structural diagram of another electronic device provided in an embodiment of the present application;

[0027] FIG4 is a structural diagram of a conventional pressure sensing chip;

[0028] FIG5 is a cross-sectional view of the pressure sensing chip shown in FIG4 along the line AA';

[0029] FIG6 is a structural diagram of another conventional pressure sensing chip;

[0030] FIG7 is a structural diagram of another conventional pressure sensing chip;

[0031] FIG8 is a cross-sectional view of the pressure sensing chip shown in FIG7 along the line AA′;

[0032] FIG9 is a structural diagram of another conventional pressure sensing chip;

[0033] FIG10 is a top view of the structure of a pressure sensing chip provided in an embodiment of the present application;

[0034] FIG11a is a cross-sectional view of the pressure sensing chip shown in FIG10 along the line AA′;

[0035] FIG11 b is another cross-sectional view of the pressure sensing chip shown in FIG10 along the line AA′;

[0036] FIG11c is a cross-sectional view of the pressure sensing chip shown in FIG10 along the BB' direction;

[0037] FIG12 is a structural diagram of another pressure sensing chip provided in an embodiment of the present application;

[0038] FIG13a is a cross-sectional view of the pressure sensing chip shown in FIG12 along the line AA′;

[0039] FIG13 b is a cross-sectional view of the pressure sensing chip shown in FIG12 along the BB′ direction;

[0040] FIG14 is a structural diagram of another pressure sensing chip provided in an embodiment of the present application;

[0041] FIG15a is a cross-sectional view of the pressure sensing chip shown in FIG14 along the line AA′;

[0042] FIG15 b is a cross-sectional view of the pressure sensing chip shown in FIG14 along the BB′ direction;

[0043] FIG15c is a cross-sectional view of the pressure sensing chip shown in FIG14 along the CC' direction;

[0044] FIG15d is a cross-sectional view of the pressure sensing chip shown in FIG14 along the DD' direction;

[0045] FIG16 is a structural diagram of another pressure sensing chip provided in an embodiment of the present application;

[0046] FIG17 is a bottom view of the pressure sensing chip shown in FIG16 ;

[0047] FIG18 is a structural diagram of another pressure sensing chip provided in an embodiment of the present application;

[0048] FIG19 is a structural diagram of another pressure sensing chip provided in an embodiment of the present application;

[0049] FIG20 is a structural diagram of an isolation layer in the pressure sensing chip shown in FIG18 ;

[0050] FIG21 is a bottom view of the pressure sensing chip shown in FIG18 ;

[0051] FIG22 is a structural diagram of a base provided in an embodiment of the present application;

[0052] FIG23a is a structural diagram of a functional layer in the pressure sensing chip shown in FIG12;

[0053] FIG23 b is a structural diagram of an isolation layer in the pressure sensing chip shown in FIG12 ;

[0054] FIG23c is a bottom view of the pressure sensing chip shown in FIG12 after the isolation layer and the functional layer are stacked;

[0055] FIG23 d is a structural diagram of a support layer in the pressure sensing chip shown in FIG12 ;

[0056] FIG23e is a bottom view of the pressure sensing chip shown in FIG12;

[0057] FIG24 is a structural diagram of another pressure sensing chip provided in an embodiment of the present application;

[0058] FIG25 is a structural diagram of another pressure sensing chip provided in an embodiment of the present application;

[0059] FIG26 is a structural diagram of another pressure sensing chip provided in an embodiment of the present application;

[0060] FIG27 is a structural diagram of another pressure sensing chip provided in an embodiment of the present application;

[0061] FIG28a is a cross-sectional view of the pressure sensing chip shown in FIG27 along the line AA′;

[0062] FIG28 b is a cross-sectional view of the pressure sensing chip shown in FIG27 along the BB′ direction;

[0063] FIG29 is a structural diagram of another pressure sensing chip provided in an embodiment of the present application;

[0064] FIG30 a is a cross-sectional view of the pressure sensing chip shown in FIG29 along the line AA′;

[0065] FIG30 b is a cross-sectional view of the pressure sensing chip shown in FIG29 along the DD′ direction;

[0066] FIG30c is another cross-sectional view of the pressure sensing chip shown in FIG29 along the DD' direction;

[0067] FIG31 is a structural diagram of another pressure sensing chip provided in an embodiment of the present application;

[0068] FIG32 is a cross-sectional view of the pressure sensing chip shown in FIG31 along the line AA′;

[0069] FIG33 is a structural diagram of another pressure sensing chip provided in an embodiment of the present application;

[0070] FIG34a is a cross-sectional view of the pressure sensing chip shown in FIG33 along the line AA′;

[0071] FIG34 b is a cross-sectional view of the pressure sensing chip shown in FIG33 along the BB′ direction;

[0072] 35a to 35e are structural diagrams corresponding to the steps in a method for preparing a pressure sensing chip provided in an embodiment of the present application;

[0073] 36a to 36c are structural diagrams corresponding to the steps in another method for preparing a pressure sensing chip provided in an embodiment of the present application. DETAILED DESCRIPTION

[0074] The following will describe the technical solutions in the embodiments of the present application in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments provided in this application, all other embodiments obtained by ordinary technicians in this field are within the scope of protection of this application.

[0075] In the description of the embodiments of the present application, unless otherwise specified, "multiple" refers to two or more than two. "At least one item" or similar expressions refers to any combination of these items, including any combination of single items or plural items. For example, at least one item among a, b and c can be represented by: a, b, c, ab, ac, bc or abc, where a, b, c can be single or multiple. "a and / or b" includes the following three combinations: only a, only b, and a combination of a and b.

[0076] In addition, in order to facilitate the clear description of the technical solutions of the embodiments of the present application, in the embodiments of the present application, words such as "first" and "second" are used to distinguish between identical or similar items with substantially the same functions and effects. Those skilled in the art will understand that words such as "first" and "second" do not limit the quantity and execution order, and words such as "first" and "second" do not necessarily limit differences. At the same time, in the embodiments of the present application, words such as "exemplary" or "for example" are used to indicate examples, illustrations or explanations. Any embodiment or design described as "exemplary" or "for example" in the embodiments of the present application should not be interpreted as being more preferred or more advantageous than other embodiments or design schemes. Specifically, the use of words such as "exemplary" or "for example" is intended to present related concepts in a concrete way for easy understanding.

[0077] When describing some embodiments, the term "connected" and its derivatives are used. The term "connected" should be understood broadly. For example, "connected" can mean fixed, removable, or integral; it can be directly connected or indirectly connected through an intermediary. In addition, the use of "based on" is intended to be open and inclusive, as a process, step, calculation, or other action "based on" one or more stated conditions or values ​​may, in practice, be based on additional conditions or values ​​beyond those stated.

[0078] As used herein, "parallel", "perpendicular", and "equal" include the situations described and situations similar to the situations described, and the range of the similar situations is within an acceptable deviation range, wherein the acceptable deviation range is as determined by a person of ordinary skill in the art taking into account the measurement in question and the errors associated with the measurement of the specific quantity (i.e., the limitations of the measurement system). For example, "parallel" includes absolute parallelism and approximate parallelism, wherein the acceptable deviation range of approximate parallelism can be, for example, a deviation within 5°; "perpendicular" includes absolute perpendicularity and approximate perpendicularity, wherein the acceptable deviation range of approximate perpendicularity can also be, for example, a deviation within 5°. "Equal" includes absolute equality and approximate equality, wherein the acceptable deviation range of approximate equality can be, for example, that the difference between the two equals is less than or equal to 5% of either one.

[0079] In the embodiments of the present application, "up", "down", "left" and "right" are not limited to being defined relative to the orientation of the components schematically placed in the drawings. It should be understood that these directional terms can be relative concepts, which are used for description and clarification relative to the components, and may change accordingly according to changes in the orientation of the components in the drawings. In the drawings, the thickness of the layers and regions are exaggerated for the sake of clarity, and the dimensional ratio relationship between the parts in the drawings does not reflect the actual dimensional ratio relationship. Therefore, changes in the shape relative to the drawings due to, for example, manufacturing technology and / or tolerances can be envisioned. Therefore, the exemplary embodiments should not be interpreted as being limited to the shapes of the regions shown in the present application, but include shape deviations due to, for example, manufacturing. For example, an etched region shown as a rectangle will typically have curved features. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to illustrate the actual shape of the regions of the device, and are not intended to limit the scope of the exemplary embodiments.

[0080] In addition, the architecture and scenarios described in the embodiments of the present application are intended to more clearly illustrate the technical solutions of the embodiments of the present application, and do not constitute a limitation on the technical solutions provided in the embodiments of the present application. Ordinary technicians in this field can know that with the evolution of the architecture and the emergence of new scenarios, the technical solutions provided in the embodiments of the present application are also applicable to similar technical problems.

[0081] An embodiment of the present application provides an electronic device that can be used to collect vibration signals. The electronic device can be applied to various communication systems or communication protocols, such as the Global System of Mobile Communications (GSM), Code Division Multiple Access (CDMA) system, Wideband Code Division Multiple Access Wireless (WCDMA), General Packet Radio Service (GPRS), and Long Term Evolution (LTE).

[0082] The above-mentioned electronic devices include, for example, consumer products, household products, vehicle-mounted products, wearable products, financial terminal products, communication products, and intelligent detection products. Exemplarily, the electronic device may be a true wireless stereo (TWS) headset, a microphone, a mobile phone, a tablet computer (pad), a smart wearable product (for example, a smart watch, a smart bracelet), an extended reality (XR) device, an inertial navigation system (inertial navigation) device, a car airbag system (supplemental inflatable restraint system, SRS) device, a smart door lock, a stethoscope, a helmet, a handle, a fluid pressure gauge, etc. The above-mentioned XR device is, for example, a virtual reality (VR) device, an augmented reality (AR) device, or a mixed reality (MR) device. The embodiments of the present application do not impose any special restrictions on the specific form of the above-mentioned terminal device.

[0083] Below, taking TWS headphones as an example, the electronic device provided in the embodiments of the present application is schematically described.

[0084] 1 and 2 , the electronic device 1000 primarily includes a housing 100, and a pressure sensor 200 and a circuit board 300 disposed within the housing 100. The pressure sensor 200 is disposed on the circuit board 300, for example, by welding, bonding, or binding, and the pressure sensor 200 can be electrically connected to the circuit board 300. The circuit board 300 can be referred to as a printed circuit board (PCB).

[0085] The above-mentioned pressure sensor 200 can be a pressure-sensitive MEMS accelerometer, wherein the pressure-sensitive MEMS accelerometer can be a piezoelectric MEMS accelerometer or a piezoresistive MEMS accelerometer. Among them, the piezoelectric MEMS accelerometer is a passive device, so it can directly convert the force caused by acceleration into charge output through the piezoelectric effect, so the piezoelectric MEMS accelerometer has low power consumption. For example, the power consumption can be as low as a few microamperes in the normally open state. The piezoresistive MEMS accelerometer is similar to the piezoelectric MEMS accelerometer, except that it is necessary to provide a working voltage to the piezoresistive element to form a voltage divider or bridge output. For the sake of convenience, the embodiments of the present application collectively refer to piezoelectric MEMS accelerometers and piezoresistive MEMS accelerometers as pressure-sensitive MEMS accelerometers.

[0086] In order to collect the acceleration of the component to be tested, the circuit board 300 shown in Figure 2 can be directly or indirectly set on the component to be tested in the electronic device 1000, so that the pressure sensor 200 is indirectly connected to the component to be tested, thereby collecting the acceleration of the component to be tested.

[0087] In addition, as shown in FIG2 , the electronic device 1000 may further include a processor 400 attached to the circuit board 300. The charge converted or the voltage signal output by the pressure sensor 200 may be transmitted to the processor 400 via the circuit board 300. The processor 400 may process the charge or voltage signal from the pressure sensor 200 to obtain the acceleration of the component under test.

[0088] The processor 400 may include one or more processing units, for example, the processor 400 may include a controller, a digital signal processor (DSP), a baseband processor, and / or a neural-network processing unit (NPU). Different processing units may be independent devices or integrated into one or more processors. In addition, the electronic device 1000 may further include an external memory interface, an internal memory, a universal serial bus (USB) interface, a charging management module, a power management module, a battery, an antenna, a mobile communication module, a wireless communication module, an audio module, a speaker, a receiver, a microphone, a headphone jack, buttons, and a camera, etc., which are electrically connected to the processor 400.

[0089] For example, when the electronic device 1000 is a mobile phone, a smart watch or a bracelet, the user can hold or wear the electronic device 1000. Therefore, the shell of the electronic device 1000 can be used as the component to be tested to contact the hand or wrist of the user, so that the pressure sensor 200 in the electronic device 1000 can obtain the acceleration of the user's hand, and then the processor 400 can determine the movement of the user's arm (swinging, falling, etc.) and realize step counting based on the acceleration obtained by the pressure sensor 200. Similarly, when the electronic device 1000 is the AR device, VR device or MR device, the pressure sensor 200 can obtain the acceleration of the user, and then the processor 400 can determine the user's posture based on the acceleration obtained by the pressure sensor 200 to enhance the interactive effect.

[0090] For example, when the electronic device 1000 is an automobile airbag system device, the shell of the device can be connected to the vehicle body as the component to be tested, so that the pressure sensor 200 in the electronic device 1000 can obtain the acceleration of the vehicle, and then the processor 400 determines whether the airbag meets the opening conditions based on the acceleration obtained by the pressure sensor 200.

[0091] For example, when the electronic device 1000 is an inertial navigation system terminal device, the shell of the device can be connected to the vehicle body as the component to be tested, so that the pressure sensor 200 in the electronic device 1000 can obtain the acceleration of the vehicle, and then the processor 400 can provide navigation services to users based on the acceleration obtained by the pressure sensor 200 and the instantaneous position data in places without global positioning system (GPS) coverage (such as bridge tunnels, buildings, mines, etc.).

[0092] Exemplarily, the microphone collects the sound made by the user through air conduction (and also collects the environmental noise). In addition, when the above-mentioned electronic device 1000 is a TWS headset, when the user makes a sound, the user's head, cheeks and vocal cords can generate corresponding vibrations at the same time, but the environmental noise will not affect the vibration. The shell of the headset can be in contact with the user's face and / or ears as a component to be tested. The pressure sensor 200 in the above-mentioned headset can collect the vibrations of the user's head, cheeks and / or vocal cords through bone conduction. In this case, the voice pick-up bone sensor (VPU) technology can be used to transmit the signal from the microphone and the signal from the pressure sensor 200 to the processor unit, so that the processor unit can perform certain algorithm processing on the above-mentioned signals (for example, correlation filtering, etc.), so as to filter out the environmental noise and output high-quality uplink call data.

[0093] It is understandable that the above is only an example of the type of electronic device 1000. This application does not limit the type of electronic device 1000, and other types of electronic devices 1000 are not described here one by one. The following continues to use the electronic device 1000 as a TWS headset as an example for example.

[0094] For example, as shown in FIG3 , the pressure sensor 200 may include a packaging substrate 10, a pressure sensor chip 20, and an application-specific integrated circuit (ASIC) chip 30. The packaging substrate 10 may have circuit traces disposed therein, and the pressure sensor chip 20 and the ASIC chip 30 may both be disposed on the packaging substrate 10 and electrically connected to the packaging substrate 10. At least one of the pressure sensor chip 20 and the ASIC chip 30 may be electrically connected to the packaging substrate 10, for example, by flip-chip assembly.

[0095] In addition, the pressure sensing chip 20 is electrically connected to the ASIC chip 30. Exemplarily, the pressure sensing chip 20 and the ASIC chip 30 can both be electrically connected to the package substrate 10 in a flip-chip manner, so that the pressure sensing chip 20 is indirectly electrically connected to the ASIC chip 30 through the circuit traces in the package substrate 10. Alternatively, when the active surfaces of the pressure sensing chip 20 and the ASIC chip 30 are facing upward, the pressure sensing chip 20 and the ASIC chip 30 can be electrically connected by flying wires. Alternatively, the pressure sensing chip 20 and the ASIC chip 30 can be electrically connected by a TSV (through silicon vias) process.

[0096] Furthermore, as shown in FIG3 , the pressure sensor 200 may further include a packaging cover plate 40, which may be buckled onto the pressure sensor chip 20 and the ASIC chip 30 and connected to the packaging substrate 10. The packaging cover plate 40 and the packaging substrate 10 may form a space for accommodating the pressure sensor chip 20 and the ASIC chip 30, thereby protecting the pressure sensor chip 20 and the ASIC chip 30 from external water, oxygen, and electromagnetic interference. The packaging cover plate 40 may be, for example, a metal cover plate. Of course, the pressure sensor 200 may also be packaged using materials such as plastic encapsulation.

[0097] 3 , a surface of the package substrate 10 away from the package cover 40 is provided with solder pads, and the package substrate 10 can be electrically connected to the circuit board 300 through the solder pads, so that the processor 400 on the circuit board 300 can transmit signals with the pressure sensor 200 .

[0098] In this case, the pressure sensing chip 20 can be indirectly connected to the component to be tested (such as the shell of the TWS headset) through the packaging substrate 10 and the circuit board 300. When the user wears the TWS headset and makes a call, the vibration of the head or throat caused by the user's voice will be indirectly transmitted to the pressure sensing chip 20 through the shell of the TWS headset, the above-mentioned circuit board 300 and the packaging substrate 10. The pressure sensing chip 20 can convert the force generated by the acceleration of the component to be tested into a corresponding charge or form a voltage signal, and output it to the dedicated integrated circuit chip 30.

[0099] In addition, the ASIC chip 30 is used to perform calculations on the signal from the pressure sensor chip 20, such as amplification and filtering. Moreover, the ASIC chip 30 can transmit the processed signal to the processor 400 in the form of a digital or analog signal. In this way, the processor 400 can obtain the acceleration of the TWS headset caused by the vibration of the user's head or throat based on the signal from the ASIC chip 30, and then convert the vibration of the user's head or throat into a corresponding voice signal based on the acceleration, thereby realizing the bone conduction technology of picking up sound.

[0100] Figures 4 and 6 respectively illustrate the structure of a pressure sensing chip 20, and Figure 5 illustrates a cross-sectional structure of the pressure sensing chip shown in Figure 4 along the A-A' direction. For example, in conjunction with Figures 4 and 5, the pressure sensing chip 20 includes a base 201, a cantilever 202, a mass block 203 and a stress detection unit 207, the base 201 is connected to one end of the cantilever 202, and the mass block 203 and the stress detection unit 207 are both connected to the cantilever 202. As shown in Figure 6, the pressure sensing chip 20 includes a base 201, a diaphragm 204, a mass block 203 and a stress detection unit (not shown in the figure), the diaphragm 204 is connected to the base 201, and the mass block 203 and the stress detection unit are both connected to the diaphragm 204. The working principles of the pressure sensing chips 20 shown in Figures 4 and 6 are similar, and the pressure sensing chip 20 shown in Figure 4 is used as an example for explanation below.

[0101] When the pressure sensing chip 20 is not subjected to vibration (also referred to as impact), the cantilever 202 is, for example, in a stationary state, and the cantilever 202 extends along the second direction X. When the pressure sensing chip 20 is subjected to impact, the vibration is transmitted to the mass block 203. Relative to the base 201, the mass block 203 moves upward along the first direction Z (also referred to as the sensing direction) or moves downward along the first direction Z. Accordingly, a certain relative acceleration is generated between the base 201 and the mass block 203. This acceleration causes a stress change in the cantilever 202, which is detected by the stress detection unit 207 on the cantilever. The pressure sensing chip 20 can convert the stress change into a corresponding charge or form a voltage signal and output it.

[0102] However, along the first direction Z, when the pressure sensing chip 20 is subjected to a large impact, the relative acceleration generated between the base 201 and the mass block 203 is relatively large, which can easily cause the mass block to tear the cantilever 202 or tear the diaphragm 204, thereby causing the pressure sensing chip 20 and the pressure sensor 200 using the pressure sensing chip 20 to fail.

[0103] It is understood that, in conjunction with Figures 7 and 8 , when the pressure sensor chip 20 is used to measure fluid, the mass block 203 is not provided in the pressure sensor chip 20. If the pressure sensor chip 20 is subjected to a large impact, the cantilever 202 or the diaphragm 204 will also generate a large relative acceleration, which may cause the cantilever 202 to be torn or the diaphragm 204 to be torn, thereby causing the pressure sensor chip 20 and the pressure sensor 200 using the pressure sensor chip 20 to fail.

[0104] In one possible implementation, as shown in FIG9 , the pressure sensing chip 20 further includes an upper cover plate 205 and a lower cover plate 206. The upper cover plate 205 is connected to the upper surface of the base 201 and is used to prevent the mass block 203 from moving upward along the first direction Z. The lower cover plate 206 is connected to the lower surface of the base 201 and is used to prevent the mass block 203 from moving downward along the first direction Z.

[0105] The upper cover plate 205 and the lower cover plate 206 limit the range of motion of the mass 203. This can prevent the cantilever 202 or the diaphragm 204 from swinging significantly, thus preventing the cantilever 202 from being torn or the diaphragm 204 from being torn, thereby improving the resistance of the pressure sensor chip 20 to impacts along the first direction Z.

[0106] However, the upper cover plate 205 and the base 201 need to be bonded, and the lower cover plate 206 and the base 201 also need to be bonded. This undoubtedly increases the process steps for preparing the pressure sensor chip 20 and increases the cost of the pressure sensor chip 20. Moreover, the arrangement of the upper cover plate 205 and the lower cover plate 206 increases the thickness of the pressure sensor chip 20, for example, by at least 200 μm. In addition, along the first direction Z, the spacing between the upper cover plate 205 and the mass block 203 is large, and the spacing between the lower cover plate 206 and the mass block 203 is large, so that the range of up and down movement of the mass block 203 is relatively large. Even if the pressure sensor chip 20 is subjected to a small impact, the arm swing of the cantilever 202 or the membrane vibration amplitude of the diaphragm 204 is still relatively large, which can easily cause fatigue failure.

[0107] Based on this, an embodiment of the present application provides a pressure sensing chip. Figures 10, 12, 14, 18, 27, and 29 respectively illustrate the structure of a pressure sensing chip. Figures 11a to 11c respectively illustrate the cross-sectional structures of the pressure sensing chip shown in Figure 10 along different cross-sectional directions, Figures 13a to 13b respectively illustrate the cross-sectional structures of the pressure sensing chip shown in Figure 12 along different cross-sectional directions, Figures 15a to 15d respectively illustrate the cross-sectional structures of the pressure sensing chip shown in Figure 14 along different cross-sectional directions, Figure 17 illustrates a top-down structure of the pressure sensing chip shown in Figure 16, Figures 28a to 28b respectively illustrate the cross-sectional structures of the pressure sensing chip shown in Figure 27 along different cross-sectional directions, and Figures 30a to 30c respectively illustrate the cross-sectional structures of the pressure sensing chip shown in Figure 29 along different cross-sectional directions. The pressure sensing chip can be used as the pressure sensing chip 20 in the pressure sensor 200 .

[0108] As shown in FIG. 10 and FIG. 12 , the pressure sensing chip 20 includes a base 1 , a sensing component 2 , a first stop component 3 and a second stop component 4 .

[0109] In some examples, as shown in Figures 10 and 12, the sensing component 2 includes a cantilever 21 and a stress detection unit 22. The cantilever 21 can also be called a functional beam.

[0110] The cantilever 21 has a fixed end and a free end. The fixed end of the cantilever 21 is connected to the base 1, and the free end of the cantilever 21 can vibrate relative to the base 1. The free end of the cantilever 21 does not directly contact the base 1, and there is a gap between the free end and the base 1, which provides space for the cantilever 21 to vibrate.

[0111] The stress detection unit 22 is located on at least one side surface of the cantilever 21. "At least one side surface of the cantilever 21" is, for example, the upper surface of the cantilever 21, or the lower surface of the cantilever 21, or the upper and lower surfaces of the cantilever 21. This means that the stress detection unit 22 can be located on the upper surface of the cantilever 21 (as shown in Figures 10 and 12), or on the lower surface of the cantilever 21, or the stress detection unit 22 can be located on both the upper and lower surfaces of the cantilever 21. Here, the first direction Z can also be understood as the thickness direction of the cantilever 21.

[0112] This example illustrates the stress detection unit 22 located on the upper surface of the cantilever 21. Alternatively, the stress detection unit 22 may be located adjacent to the base 1, where the stress is more concentrated. Of course, the stress detection unit 22 may also be located elsewhere on the cantilever 21, or even extend beyond the cantilever 21 (e.g., onto the base 1).

[0113] The material of the stress detection unit 22 includes a piezoelectric material or a piezoresistive material. In the case where the material of the stress detection unit 22 includes a piezoelectric material, the stress detection unit 22 is a piezoelectric stress detection unit. In this case, the structure of the stress detection unit 22 includes, but is not limited to, a unimorph, a bimorph, a multilayer, and the like. In the case where the material of the stress detection unit 22 includes a piezoresistive material, the stress detection unit 22 is a piezoresistive stress detection unit. In this case, the structure of the stress detection unit 22 includes, but is not limited to, a voltage divider type, a bridge type, and the like.

[0114] In some examples, as shown in FIG. 10 and FIG. 12 , the first stopping assembly 3 includes a first stopping portion 31 and a first stopping block 32 .

[0115] The first stopper 31 is connected to the cantilever 21. The relative position between the first stopper 31 and the cantilever 21 is fixed. Optionally, the first stopper 31 and the cantilever 21 are two independent components, or the first stopper 31 and the cantilever 21 are integrally formed.

[0116] In orthographic projection onto the reference plane, the first stopper 31 is, for example, connected to at least one side of the free end of the cantilever 21. Alternatively, as shown in Figures 10 and 12 , the first stopper 31 is connected to the right side of the free end of the cantilever 21. As shown in Figure 29 , the first stopper 31 is connected to both the upper and lower sides of the free end of the cantilever 21. As shown in Figures 14 , 16 , 18 , and 19 , each first stopper 31 is connected between two adjacent cantilever arms 21 along the first direction X.

[0117] The first stop block 32 is connected to the base 1. The relative position between the first stop block 32 and the base 1 is fixed. Optionally, the first stop block 32 and the base 1 are two independent components, or the first stop block 32 and the base 1 are integrally formed.

[0118] In an orthographic projection onto the reference plane, the first stop block 32 protrudes from the base 1. As shown in Figures 11a, 11b, and 13a, along the first direction Z, the first stop portion 31 is spaced above the first stop block 32. That is, the first stop portion 31 is higher than the first stop block 32, and a gap exists between the lower surface of the first stop portion 31 and the upper surface of the first stop block 32, without contact between the first stop portion 31 and the first stop block 32. In conjunction with Figures 10, 11a, and 11b, or Figures 12 and 13a, in an orthographic projection onto the reference plane, the first stop portion 31 and the first stop block 32 partially overlap. It is understandable that when the pressure sensing chip 20 is subjected to a large upward impact along the first direction Z, the impact will be transmitted to the base 1, causing the base 1 to move in response to the impact. However, due to inertia, the first stop portion 31, the cantilever 21 connected to the first stop portion 31, and the second stop block 42 (as described below) will generate a large relative acceleration relative to the base 1 and move in the opposite direction relative to the base 1, that is, move downward along the first direction Z. Since the first stop portion 31 and the first stop block 32 partially overlap in the first direction Z, after the first stop portion 31 moves to the upper surface of the first stop block 32, it will be blocked by the first stop block 32, so that the first stop portion 31, the cantilever 21, and the second stop block 42 no longer move downward significantly, thereby preventing the cantilever 21 from being torn off.

[0119] The downward movement range of the first stop portion 31 along the first direction Z is determined by the distance between the first stop portion 31 and the first stop block 32. The distance between the first stop portion 31 and the first stop block 32 can be flexibly set according to actual product requirements.

[0120] In some examples, as shown in FIG. 10 and FIG. 12 , the second stopping assembly 4 includes a second stopping portion 41 and a second stopping block 42 .

[0121] The second stopper 41 is connected to the base 1. The relative position between the second stopper 41 and the base 1 is fixed. Optionally, the second stopper 41 and the base 1 are two independent components, or the second stopper 41 and the base 1 are integrally formed.

[0122] The second stop block 42 is connected to the cantilever 21. For example, the second stop block 42 is connected to the lower surface of the cantilever 21. The relative position between the second stop block 42 and the cantilever 21 is fixed. The second stop block 42 and the lower surface of the cantilever 21 can be directly connected; or, an intermediate component (such as the second isolation portion in the isolation layer mentioned below) can be provided between the second stop block 42 and the lower surface of the cantilever 21, and the second stop block 42 is connected to the lower surface of the cantilever 21 through the intermediate component. Optionally, in the second direction X shown in Figure 11a, there is a certain distance between the second stop block 42 and the fixed end of the cantilever 21.

[0123] In conjunction with Figure 10, Figure 11c, or Figure 12 and Figure 13b, the second stop block 42 has a protrusion 421. In the orthographic projection onto the reference plane, the protrusion 421 protrudes from the cantilever 21. Exemplarily, the number of the protrusions 421 is at least one. In the orthographic projection onto the reference plane, one protrusion 421 is located on one side of the cantilever 21, and at least one protrusion 421 can be provided on the same side of the cantilever 21. Optionally, Figures 10 and 12 both illustrate two protrusions 421, which are respectively located on the upper and lower sides of the cantilever 21. Figures 14 and 18 also illustrate two protrusions 421, each of which is located between two adjacent cantilevers 21 along the third direction Y.

[0124] As shown in Figures 11c and 13b, along the first direction Z, the second stop portion 41 is spaced above the protrusion 421. That is, the second stop portion 41 is higher than the second stop block 42, and a gap exists between the lower surface of the second stop portion 41 and the upper surface of the second stop block 42, resulting in no contact between the second stop portion 41 and the second stop block 42. Referring to Figures 10 and 11c, or Figures 12 and 13b, in an orthographic projection onto a reference plane, the second stop portion 41 and the protrusion 421 partially overlap. It is understood that when the pressure sensor chip 20 is subjected to a significant downward impact along the first direction Z, the impact is transmitted to the base 1, causing the base 1 to move in response to the impact. However, due to inertia, the cantilever 21 and the second stop block 42 connected to the cantilever 21 will experience a significant relative acceleration relative to the base 1, causing them to move in the opposite direction relative to the base 1, i.e., upward along the first direction Z. Since the second stop portion 41 and the second stop block 42 partially overlap in the first direction Z, after the second stop block 42 moves to the lower surface of the second stop portion 41, it will be blocked by the second stop portion 41, so that the cantilever 21 and the second stop block 42 no longer move upward significantly, thereby avoiding tearing the cantilever 21.

[0125] The downward movement range of the second stop portion 41 along the first direction Z is determined by the distance between the second stop portion 41 and the second stop block 42. The distance between the second stop portion 41 and the second stop block 42 can be flexibly set according to actual product requirements.

[0126] Thus, in some embodiments of the present application, the pressure sensing chip 20 is provided with a first stopper 31 connected to the cantilever 21 and a first stopper 32 connected to the base 1, and the spatial positional relationship between the first stopper 31 and the first stopper 32 is defined so that the first stopper 31 and the first stopper 32 partially overlap and have a certain spacing in the first direction Z. When the pressure sensing chip 20 is subjected to a large upward impact in the first direction Z, the impact is transmitted to the cantilever through the base. The first stopper 32 can stop the first stopper 31, so that the downward movement of the cantilever 21 and the second stopper 42 in the first direction Z stops on the upper surface of the first stopper 32. In other words, in embodiments of the present application, the first stopper 31 and the first stopper 32 cooperate to limit the downward movement range of the cantilever 21 and the second stopper 42 in the first direction Z, thereby protecting the cantilever 21 and preventing the cantilever 21 from moving significantly due to the impact, thereby preventing the cantilever 21 from being torn apart.

[0127] Furthermore, by providing a second stop portion 41 connected to the base 1 and a second stop block 42 connected to the cantilever 21, and by limiting the spatial positional relationship between the second stop portion 41 and the second stop block 42, the second stop portion 41 and the second stop block 42 both partially overlap and have a certain spacing in the first direction Z. When the pressure sensing chip 20 is subjected to a large downward impact along the first direction Z, the impact will be transmitted to the cantilever through the base. The second stop portion 41 can be used to stop the second stop block 42, so that the upward movement of the cantilever 21 and the second stop block 42 along the first direction Z is stopped at the lower surface of the second stop portion 41. In other words, the embodiment of the present application can, through the cooperation of the second stop portion 41 and the second stop block 42, limit the range of upward movement of the cantilever 21 and the second stop block 42 along the first direction Z, thereby protecting the cantilever 21 and preventing the cantilever 21 from being subjected to large movements caused by the impact, thereby preventing the cantilever 21 from being torn apart.

[0128] This can not only improve the resistance of the pressure sensing chip 20 to impacts along the first direction Z upward, but also improve the resistance of the pressure sensing chip 20 to impacts along the first direction Z downward, thereby avoiding the failure of the pressure sensing chip 20 due to the breakage of the cantilever 21, improving the reliability of the pressure sensing chip 20, and improving the reliability of the pressure sensor 200 using the pressure sensing chip 20.

[0129] In addition, the pressure sensing chip 20 provided in the embodiment of the present application utilizes a first stopper 31 and a first stopper block 32 to replace the lower cover in the above-mentioned embodiment, and utilizes a second stopper 41 and a second stopper block 42 to replace the upper cover in the above-mentioned embodiment. This can avoid adding additional components (such as an upper cover and a lower cover) while forming good impact resistance, reducing or even eliminating the impact on sensitivity. Moreover, on the one hand, the relevant bonding process steps can be omitted, thereby improving the preparation efficiency of the pressure sensing chip 20 and reducing the cost of the pressure sensing chip 20; on the other hand, it avoids increasing the thickness of the pressure sensing chip 20, ensuring its space-saving advantage; on the other hand, in the first direction Z, by flexibly setting the spacing between the first stopper 31 and the first stopper block 32, and flexibly setting the spacing between the second stopper 41 and the second stopper block 42, the arm swing of the cantilever 21 can be limited to a relatively small range to reduce the impact of fatigue.

[0130] The number of the above-mentioned sensing components 2 is at least one. For example, the number of sensing components 2 is one, two, three or even more. Among them, for the same sensing component 2, the number of stress detection units 22 provided on each cantilever 21 can be one, two, three or even more. In the case where multiple stress detection units 22 are provided on the cantilever 21, the multiple stress detection units 22 are spaced apart on the reference plane. For example, in Figures 14 and 18, each of the figures shows four cantilevers 21, and each cantilever 21 is provided with a stress detection unit 22. In Figures 16 and 19, each of the figures shows four cantilevers 21, and each cantilever 21 is provided with two stress detection units 22 spaced apart.

[0131] Furthermore, when a plurality of stress detection units 22 are provided on the cantilever 21, the plurality of stress detection units 22 can be connected in series, in parallel, or in mixed series. The eight stress detection units 22 shown in FIG16 or FIG19 can be respectively represented as stress detection units 2211, 2212, 2221, 2222, 2231, 2232, 2241, and 2242, wherein the stress detection units 2211, 2221, 2231, and 2241 can be connected in parallel, and the stress detection units 2212, 2222, 2232, and 2242 can be connected in parallel, and then the two can be output in series, which can effectively utilize energy.

[0132] The number of the above-mentioned first stop components 3 is at least one. For example, the number of the first stop components 3 is one, two, three or even more. Among them, for the same first stop component 3, the number of first stop blocks 32 can be one or more; the number of first stop parts 31 can be one or more. Among them, the first stop blocks 32 and the first stop parts 31 can be set in a one-to-one correspondence, for example. Alternatively, one first stop block 32 can be set in correspondence with multiple first stop parts 31. Alternatively, multiple first stop blocks 32 can be set in correspondence with one first stop part 31.

[0133] The number of the aforementioned second stop assembly 4 is at least one. For example, the number of second stop assemblies 4 can be one, two, three, or even more. For the same second stop assembly 4, the number of second stop portions 41 can be one or more. The second stop portions 41 and the second stop blocks 42 can be arranged in a one-to-one correspondence, for example. Alternatively, one second stop portion 41 can be arranged in correspondence with multiple second stop blocks 42. Alternatively, multiple second stop portions 41 can be arranged in correspondence with one second stop block 42.

[0134] Furthermore, the sensing components 2 and the first stop components 3 may be provided in a one-to-one correspondence, for example. Alternatively, one sensing component 2 may be provided in correspondence with multiple first stop components 3. Alternatively, multiple sensing components 2 may be provided in correspondence with one first stop component 3. The sensing components 2 and the second stop components 4 may be provided in a one-to-one correspondence, for example. Alternatively, one sensing component 2 may be provided in correspondence with multiple second stop components 4. Alternatively, multiple sensing components 2 may be provided in correspondence with one second stop component 4.

[0135] The structure of the base 1 in the pressure sensing chip 20 includes various types and can be set according to actual product requirements, so as to be able to connect the cantilever 21 and set the first stop component 3 and the second stop component 4.

[0136] In some examples, as shown in FIG14 , the base 1 is a hollow frame structure. The frame structure includes, but is not limited to, a polygonal frame structure, a circular frame structure, an elliptical frame structure, etc. The polygonal frame structure may be, for example, a triangular frame structure, a rectangular frame structure as shown in FIG14 , a hexagonal frame, etc.

[0137] In this case, the sensing assembly 2, first stop assembly 3, and second stop assembly 4 are, for example, all located within the area enclosed by the frame structure. The connection points between the cantilever 21 and the base 1, the connection points between the first stop block 32 and the base, and the connection points between the second stop portion 41 and the base are spaced apart along the annular inner wall of the base 1. Furthermore, this arrangement can be customized based on actual product requirements.

[0138] For example, in Figures 10, 12, and 27, there is one sensing component 2, connected to the left side of the base 1. There is one first stop component 3, located on the right side of the sensing component 2, with the first stop block 32 of the first stop component 3 connected to the right side of the base 1. There are two second stop components 4, located on the upper and lower sides of the sensing component 2, respectively. The second stop portion 41 of one second stop component 4 is connected to the upper side of the base 1, and the second stop portion 41 of the other second stop component 4 is connected to the lower side of the base 1.

[0139] At this time, the first stop assembly 3 can stop the cantilever 21 from moving downward along the first direction Z. The two second stop assemblies 4 can cooperate with each other to jointly stop the cantilever 21 from moving upward along the first direction Z.

[0140] For another example, in Figure 14 , there are four sensing components 2, two of which are connected to the upper side of the base 1, and the other two are connected to the lower side of the base 1. There are two first stop components 3, one of which has a first stop block 32 connected to the upper side of the base 1, and the other has a first stop block 32 connected to the lower side of the base 1. Along the second direction X, each first stop component 3 is provided with a sensing component 2 on two opposite sides. There are two second stop components 4, one of which has a second stop portion 41 connected to the left side of the base 1, and the other has a second stop portion 41 connected to the right side of the base 1. Along the third direction Y, each second stop component 4 is provided with a sensing component 2 on two opposite sides.

[0141] At this time, in conjunction with Figures 14, 15a, and 15c, the first stop portion 31 and the first stop block 32 of each first stop assembly 3 are spaced apart. When the pressure sensor 20 is subjected to an upward impact along the first direction Z, the cantilevers of the above-mentioned four sensing assemblies 2 all have an acceleration downward along the first direction Z relative to the base 1. The above-mentioned two first stop assemblies 3 can cooperate with each other to jointly stop the downward movement of the four cantilevers 21 along the first direction Z. In conjunction with Figures 14, 15a, and 15b, the second stop portion 41 and the second stop block 42 of each second stop assembly 4 are spaced apart. When the pressure sensor 20 is subjected to a downward impact along the first direction Z, the cantilevers of the above-mentioned four sensing assemblies 2 all have an acceleration upward along the first direction Z relative to the base 1. The above-mentioned two second stop assemblies 4 can cooperate with each other to jointly stop the upward movement of the four cantilevers 21 along the first direction Z.

[0142] It is understandable that in Figure 14, the sizes of the four cantilevers 21 are, for example, the same, so that not only the stopping effect in the first direction Z upward is better, but also the stopping effect in the first direction Z downward is better.

[0143] For another example, in Figure 18 , there are four sensing components 2, which are respectively connected to the upper side, lower side, left side, and right side of the base 1. There are two first stop components 3, wherein the first stop block 32 of one first stop component 3 is connected to the upper side of the base 1, and the first stop block 32 of the other first stop component 3 is connected to the lower side of the base 1. Along the second direction X, a sensing component 2 is provided on two opposite sides of each first stop component 3. There are two second stop components 4, wherein the second stop portion 41 of one second stop component 4 is connected to the left side of the base 1, and the second stop portion 41 of the other second stop component 4 is connected to the right side of the base 1. Along the third direction Y, a sensing component 2 is provided on two opposite sides of each second stop component 4.

[0144] At this time, the two first stop assemblies 3 can cooperate with each other to jointly stop the four cantilevers 21 from moving downward along the first direction Z. The two second stop assemblies 4 can cooperate with each other to jointly stop the four cantilevers 21 from moving upward along the first direction Z.

[0145] It will be appreciated that in FIG18 , the pressure sensor 20 has, for example, a center of symmetry. The four sensing components 2 are symmetrical about this center of symmetry, the two first stopper components 3 are symmetrical about this center of symmetry, and the four second stopper components 4 are symmetrical about this center of symmetry. This achieves a better stopping effect, and furthermore, the first stopper 31 and the second stopper 41 can have the same stiffness.

[0146] For another example, in Figure 29, there are two sensing components 2, one of which is connected to the left side of the base 1, and the other is connected to the right side of the base 1. A first stop component 3 and a second stop component 4 are provided on opposite sides of each sensing component 2 along the second direction X.

[0147] At this point, referring to Figures 29 and 30a, each sensing component 2 is provided with two corresponding first stopper components 3. These two first stopper components 3 can cooperate with each other to jointly stop the corresponding cantilever 21. Referring to Figures 29, 30b, and 30c, each sensing component 2 is provided with two corresponding second stopper components 4. These two second stopper components 4 can cooperate with each other to jointly stop the corresponding cantilever 21.

[0148] In other examples, as shown in FIG22 , the base 1 includes a plurality of connected side panels 101, and the shapes formed by the plurality of side panels 101 include but are not limited to L-shape, U-shape, H-shape (as shown in FIG22 ), etc. In this case, the sensing component 2, the first stop component 3, and the second stop component 4 are, for example, all located within the area defined by the plurality of side panels 101. The side panel 101 connected to the first stop block 32 and the side panel 101 connected to the second stop portion 41 may be the same side panel 101 or different side panels 101. The side panel 101 connected to the cantilever 21 and the side panel 101 connected to the first stop block 32 are, for example, different side panels 101. The side panel 101 connected to the cantilever 21 and the side panel 101 connected to the second stop portion 41 are, for example, different side panels 101.

[0149] It is understood that the base 1 can be micro-processed on a silicon substrate, and thus the base 1 can be composed of multiple sequentially stacked film layers. The following, with reference to the accompanying drawings, uses the base 1 as an example of a hollow rectangular frame structure to schematically illustrate the film layers included in the base 1.

[0150] In some embodiments, as shown in Figures 11a, 11b, 13a, 15a, 28a, and 30a, the base 1 includes a stacked support layer 11, at least one isolation layer 12, and a functional layer 13. The isolation layer 12 may be one, two, three, or even more layers. When the isolation layer 12 is multiple, the multiple isolation layers 12 are stacked sequentially along a first direction Z.

[0151] The above-mentioned support layer 11 is used to provide support. The functional layer 13 is mainly used to achieve detection. In combination with Figures 11a and 11c, or in combination with Figures 13a and 13b, or in combination with Figures 30b and 30c, the isolation layer 12 includes, for example, a first isolation portion 121 and a second isolation portion 122, and the first isolation portion 121 and the second isolation portion 122 may be connected or not connected. The first isolation portion 121 is used to separate the support layer 11 and the functional layer 13, and the second isolation portion 122 is used to connect the cantilever 21 and the second stop block 42. Of course, the isolation layer 12 may also include only the first isolation portion 121. Among them, as shown in Figures 29 and 30c, when the first isolation portion 121 and the second isolation portion 122 are not connected, the influence of the second isolation portion 122 on the movement of the cantilever 21 can be reduced, thereby improving the energy conversion efficiency.

[0152] Figures 17 and 21 respectively illustrate the top-view structure of a pressure sensing chip, Figure 20 illustrates the structure of an isolation layer of the pressure sensing chip shown in Figure 18, Figure 23a illustrates the structure of a functional layer of the pressure sensing chip shown in Figure 12, Figure 23b illustrates the structure of an isolation layer of the pressure sensing chip shown in Figure 12, Figure 23c illustrates the top-view structure after the support layer and the isolation layer are stacked, and Figure 23d illustrates the structure of a support layer 11 and a second stop block 42 of the pressure sensing chip shown in Figure 12.

[0153] It is understood that the cantilever 21, first stopper 31, first stopper block 32, second stopper 41, second stopper block 42, and other structures described above can also be formed using micromachining processes. Furthermore, the cantilever 21, first stopper 31, first stopper block 32, second stopper 41, second stopper block 42, and other structures can be formed simultaneously during the process of forming the base 1.

[0154] In some possible examples, as shown in FIG. 23 a , the cantilever 21 , the first stopper 31 , the second stopper 41 and the functional layer 13 are arranged on the same layer.

[0155] The term "same layer" used herein refers to a layer structure formed using the same film-forming process to form a specific pattern, followed by a single patterning process using the same mask. Depending on the specific pattern, a single patterning process may include multiple etching steps, and the specific pattern within the resulting layer structure may be continuous or discontinuous, at varying heights or thicknesses.

[0156] In other words, the cantilever 21, first stopper 31, second stopper 41, and functional layer 13 are patterned from the same thin film. This allows for simultaneous formation of multiple structures, including the cantilever 21, first stopper 31, second stopper 41, and functional layer 13, in a single patterning process, simplifying the fabrication process for the pressure sensor chip 20. Furthermore, relative to the reference plane, the cantilever 21, first stopper 31, second stopper 41, and functional layer 13 are flush, further minimizing the thickness of the pressure sensor chip 20 and further ensuring its space-saving advantages.

[0157] For example, as shown in Figures 10, 12 and 29, the cantilever 21 and the functional layer 13 are connected and form an integral structure, the first stop portion 31 and the cantilever 21 are connected and form an integral structure, and the second stop portion 41 and the functional layer 13 are connected and form an integral structure, which is conducive to enhancing the structural stability of the pressure sensing chip 20.

[0158] Furthermore, as shown in Figures 14 and 18 , different cantilevers 21 and different first stoppers 31 are connected to form an integrated structure, which is beneficial for further enhancing the structural stability of the pressure sensor chip 20 .

[0159] In the case where the number of the isolation layer 12 is one or more layers, the arrangement of the first stop block 32 and the second stop block 42 may be different.

[0160] In some possible examples, as shown in FIG. 11 a , FIG. 11 c , FIG. 13 a - FIG. 13 b , and FIG. 15 a - FIG. 15 d , the number of the isolation layer 12 is one layer.

[0161] In this case, the first stop block 32 , the second stop block 42 and the support layer 11 are arranged on the same layer.

[0162] In other words, the first stop block 32, the second stop block 42, and the support layer 11 are formed by patterning the same thin film. This allows the first stop block 32, the second stop block 42, and the support layer 11 to be formed simultaneously in a single patterning process, which helps simplify the preparation process of the pressure sensor chip 20. Moreover, relative to the reference plane, the upper surfaces of the first stop block 32, the second stop block 42, and the support layer 11 are flush, the lower surfaces of the first stop block 32 and the support layer 11 are, for example, flush, and the lower surface of the second stop block 42 is, for example, recessed relative to the lower surface of the support layer 11. This further avoids increasing the thickness of the pressure sensor chip 20 and further ensures its space-saving advantage.

[0163] Since there is only one isolation layer 12, a second isolation portion 122 is provided between the second stop block 42 and the cantilever 21. Since the second stop block 42 and the support layer 11 are provided in the same layer, the second stop block 42 can also be referred to as a mass.

[0164] In this example, regardless of whether the pressure sensing chip 20 is subjected to a large impact in the downward direction Z or in the upward direction Z, the range of motion of the cantilever 21 is limited by the thickness of the isolation layer 12. The thickness of the isolation layer 12 can be flexibly adjusted, and the range of motion of the cantilever 21 can also be flexibly set.

[0165] Furthermore, because the isolation layer 12 can be made relatively thin, for example, its thickness can range from 0.5 μm to 20 μm, the range of motion of the cantilever 21 is relatively small. Thus, even if the pressure sensor chip 20 is subjected to a relatively small impact in the first direction Z, the first stopper assembly 3 and the second stopper assembly 4 can limit the motion of the cantilever 21, thereby reducing the effects of fatigue.

[0166] Exemplarily, the first stop block 32 and the supporting layer 11 are connected and form an integral structure, which is beneficial to enhancing the structural stability of the pressure sensing chip 20 .

[0167] Furthermore, as shown in Figures 17, 21, and 23d, there is a gap between the second stopper 42 and the support layer 11, forming no connection. This ensures that the second stopper 42 can move with the movement of the cantilever 21, thereby ensuring that the pressure sensor chip 20 can properly detect acceleration.

[0168] In some other possible examples, as shown in FIG. 11 b , FIG. 28 a - FIG. 28 b , and FIG. 30 a - FIG. 30 c , the number of the isolation layer 12 is multiple layers.

[0169] As for the first stopping block 32 , in this case, the first stopping block 32 is at least provided at the same layer as the supporting layer 11 .

[0170] For example, as shown in Figure 11b, the first stop block 32 is provided on the same layer as the support layer 11. For the first stop block 32 and the support layer 11, please refer to the description in some of the above examples, which will not be repeated here.

[0171] For another example, as shown in FIG28 a and FIG30 a , a portion of the first stop block 32 is disposed on the same layer as the support layer 11 , and another portion of the first stop block 32 is disposed on the same layer as a portion of the isolation layer 12 in the multi-layer isolation layer 12 .

[0172] Specifically, there are m isolation layers 12, and the other portion of the first stop block 32 is disposed on the same layer as n isolation layers 12 adjacent to the support layer 11, where m>n, n≥1, and both n and m are integers. Alternatively, Figure 28a illustrates two isolation layers 12: a portion of the first stop block 32 is disposed on the same layer as the support layer 11, and the other portion of the first stop block 32 is disposed on the same layer as the isolation layer 12 closest to the support layer 11. In this manner, if the pressure sensor chip 20 is subjected to a significant upward impact in the first direction Z, the portion of the isolation layer 12 not disposed on the same layer as the first stop block 32 can be utilized to provide space for the cantilever 21 to move downward in the first direction Z.

[0173] Illustratively, a portion of the first stop block 32 is connected to the support layer 11 and forms an integral structure, and another portion of the first stop block 32 is connected to a portion of the isolation layer 12 and forms an integral structure, which is beneficial to enhancing the structural stability of the pressure sensing chip 20.

[0174] There are multiple configuration options for the second stop block 42 .

[0175] For example, the second stop block 42 and the support layer 11 are provided on the same layer. With regard to the second stop block 42 and the support layer 11, reference can be made to the description in some of the above examples, which will not be repeated here.

[0176] For another example, as shown in Figures 28b, 30b, and 30c, the second stop block 42 is provided on the same layer as the target isolation layer 12a in the multi-layer isolation layer 12, and at least one isolation layer 12 is provided between the target isolation layer 12a and the functional layer 13. In this case, it can be considered that no mass block is provided in the pressure sensing chip 20.

[0177] The target isolation layer 12a is the portion of isolation layer 12 near the support layer 11 within the multi-layer isolation layer 12. Specifically, there are m isolation layers 12, with n isolation layers 12 near the support layer 11 serving as the target isolation layer 12a, where m>n, n≥1, and both n and m are integers. Optionally, Figure 28b illustrates two isolation layers 12: the lower isolation layer 12 serves as the target isolation layer 12a, while the upper isolation layer 12 provides space for cantilever 21 to move along the first direction Z.

[0178] For example, the target isolation layer 12a is not provided with the second isolation portion 122. In at least one isolation layer 12 disposed between the target isolation layer 12a and the functional layer 13, a second isolation portion 122 connecting the cantilever 21 and the second stopper 42 is provided.

[0179] By arranging the second stop block 42 and the target isolation layer 12 a in the same layer, the second stop block 42 and the target isolation layer 12 a can be formed simultaneously in one patterning process, which is beneficial to simplifying the manufacturing process of the pressure sensor chip 20 .

[0180] It is worth mentioning that the pressure sensing chip 20 in the embodiment of the present application can be directly or indirectly connected to an external device (such as a circuit board 300) through a side surface of the supporting layer 11 away from the functional layer 13; or, it can also be directly or indirectly connected to an external device (such as a circuit board 300) through a side surface of the functional layer 13 away from the supporting layer 11.

[0181] The pressure sensing chip 20 is used to measure acceleration, fluid pressure, etc., for example.

[0182] For example, when the pressure sensor chip 20 is used to measure acceleration, the pressure sensor chip 20 can be used in applications such as acceleration sensing. In this case, referring to FIG10 and FIG11a-FIG11c, or referring to FIG12 and FIG13a-FIG13b, the pressure sensor chip 20 includes a mass block, and accordingly, the second stop block 42 is provided at least on the same layer as the support layer 11.

[0183] For example, when the pressure sensor chip 20 is used to measure fluid, the pressure sensor chip 20 can be used in applications such as flow sensing. In this case, referring to Figures 27 and 28a-28b, or Figures 29 and 30a-30c, the pressure sensor chip 20 does not have a mass block, and accordingly, the second stop block 42 is provided on the same layer as the isolation layer 12.

[0184] The first stopper 31 can have various structural forms, which can be configured according to actual product requirements. The following schematically illustrates different structural forms of the first stopper 31 with reference to the accompanying drawings.

[0185] In some possible examples, as shown in Figures 10 and 27 , in an orthographic projection onto a reference plane, the first stop portion 31 protrudes from the cantilever 21. In this case, the first stop portion 31 may also be referred to as a first stop beam.

[0186] In this case, the first stop block 32 can be arranged in a variety of ways, including but not limited to the following two examples.

[0187] For example, as shown in Figure 27, the inner boundary figure of the orthographic projection of the base 1 on the reference plane is a rectangle. The first stopper 32 is located inside the rectangle and connected to one side of the rectangle.

[0188] For another example, as shown in Figure 10, the pressure sensing chip 20 has a third notch G3, which passes through the isolation layer 12 and part of the functional layer 13 of the base 1. Among them, the first stop block 32 is located in the third notch G3 and is connected to the support layer 11. The partial boundary of the orthographic projection of the first stop block 32 on the reference plane and the partial inner boundary of the orthographic projection of the base 1 on the reference plane together constitute a rectangular boundary figure. The first stop block 32 is in an exposed state. A portion of the first stop portion 31 extends into the third notch G3 and is located above the first stop block 32. There is also a gap between the first stop portion 31 and the functional layer 13.

[0189] In some other possible examples, as shown in Fig. 12, a portion of the cantilever 21 constitutes a first stop portion 31. In this case, the first stop portion 31 may also be referred to as a first stop membrane.

[0190] In this case, referring to FIG. 12 and FIG. 23 b to FIG. 23 e , the pressure sensing chip 20 further has a second notch G2 , and the second notch G2 is located below the first stopping portion 31 .

[0191] For example, a second stop block 42 and at least one second isolation portion 122 are provided below the cantilever 21. As shown in FIG23d , the second gap G2 may extend through the at least one second isolation portion 122 and the second stop block 42. Alternatively, the second gap G2 may extend through the at least one second isolation portion 122. Alternatively, the second gap G2 may extend through the at least one second isolation portion 122 and a portion of the second stop block 42.

[0192] As shown in FIG. 23 d and FIG. 23 e , a portion of the first stopping block 32 extends into the second gap G2 .

[0193] The second stopper 41 can have various structural forms, which can be configured according to actual product requirements. The following schematically illustrates different structural forms of the second stopper 41 with reference to the accompanying drawings.

[0194] In some possible examples, as shown in Figures 10 and 27, in an orthographic projection onto the reference plane, the second stop portion 41 protrudes from the functional layer 13. In this case, the second stop portion 41 can also be referred to as a second stop beam.

[0195] In this case, the second stop block 42 can be arranged in a variety of ways, including but not limited to the following two examples.

[0196] For example, as shown in FIG27 , no notch is provided in the cantilever 21. In an orthographic projection onto the reference plane, the protruding portion 421 of the second stopper 42 protrudes from the cantilever 21.

[0197] As another example, as shown in Figure 10 , the pressure sensor chip 20 has a fourth notch G4 that extends through the cantilever 21 and the second isolation portion 122 located between the cantilever 21 and the second stopper 42. In an orthographic projection onto a reference plane, the protrusion 421 of the second stopper 42 is located within the fourth notch G4. The second stopper 42 is exposed. A portion of the second stopper 41 extends into the fourth notch G4 and is located above the second stopper 42. A gap is also present between the second stopper 41 and the cantilever 21.

[0198] In some other possible examples, as shown in Fig. 12, a portion of the functional layer 13 constitutes the second stopping portion 41. In this case, the second stopping portion 41 can also be referred to as a second stopping film.

[0199] In this case, referring to FIG. 12 and FIG. 23 b to FIG. 23 e , the pressure sensing chip 20 further has a first notch G1 , and the first notch G1 is located below the second stopping portion 41 .

[0200] For example, a support layer 11 and at least one first isolation portion 121 between the functional layer 13 and the support layer 11 are provided below the functional layer 13. As shown in FIG23d , the first gap G1 may penetrate the at least one first isolation portion 121 and the support layer 11. Alternatively, the second gap G2 may penetrate the at least one first isolation portion 121. Alternatively, the second gap G2 may penetrate the at least one first isolation portion 121 and a portion of the support layer 11.

[0201] As shown in FIG. 23 d and FIG. 23 e , a portion of the second stopping block 42 extends into the first gap G1 .

[0202] FIG24 also illustrates a structure of a pressure sensing chip, wherein FIG24(b) is an enlarged structure of area P1 of FIG24(a), and FIG24(c) is an enlarged structure of area P2 of FIG24(a).

[0203] In some embodiments of the present application, as shown in FIG24 , in an orthographic projection onto a reference plane, the portion of the first stop portion 31 that overlaps with the first stop block 32 is provided with at least one connecting structure 102. This connecting structure 102 includes, but is not limited to, through-holes, grooves, and other structures. When the connecting structure 102 is a through-hole, the axis of each through-hole is, for example, perpendicular to the reference plane.

[0204] Each connecting structure 102 connects the gap between the first stopping portion 31 and the first stopping block 32 .

[0205] During the process of preparing the pressure sensing chip 20 , it is convenient for fluid (such as corrosive liquid or corrosive gas) to pass through the through hole H to corrode the film layer below the first stopper 31 and facilitate the outflow of the fluid.

[0206] For example, when the first stop portion 31 is arranged on the same layer as the functional layer 13 and the first stop block 32 is arranged on at least the same layer as the support layer 11, it is convenient for the fluid (such as corrosive liquid or corrosive gas) to corrode the membrane layer where the isolation layer 12 is located through the through hole H and facilitate the outflow of the fluid.

[0207] In other embodiments of the present application, as shown in FIG24 , in an orthographic projection onto a reference plane, the portion of the second stop portion 41 that overlaps with the second stop block 42 is provided with at least one connecting structure 102. This connecting structure 102 includes, but is not limited to, through-holes, grooves, and other structures. When the connecting structure 102 is a through-hole, the axis of each through-hole is, for example, perpendicular to the reference plane.

[0208] Each connecting structure 102 connects the gap between the second stopping portion 41 and the second stopping block 42 .

[0209] During the process of preparing the pressure sensor chip 20 , it is convenient for fluid (such as corrosive liquid or corrosive gas) to pass through the through hole H to corrode the film layer below the second stopper 41 and facilitate the outflow of the fluid.

[0210] For example, when the second stop portion 41 is arranged on the same layer as the functional layer 13 and the second stop block 42 is arranged on at least the same layer as the support layer 11, it is convenient for the fluid (such as corrosive liquid or corrosive gas) to corrode the membrane layer where the isolation layer 12 is located through the through hole H and facilitate the outflow of the fluid.

[0211] In some other embodiments of the present application, a communication structure 102 is provided in both the first stop portion 31 and the second stop portion 41 .

[0212] Optionally, the communication structures 102 provided in the first stop portion 31 and the second stop portion 41 may be the same or different.

[0213] FIG25 and FIG26 respectively illustrate the structure of a pressure sensing chip.

[0214] In some possible embodiments, as shown in FIG. 25 and FIG. 26 , the pressure sensing chip 20 provided in the embodiment of the present application further includes a first damping layer 5 and / or a second damping layer 6 .

[0215] The first damping layer 5 may be arranged at various locations, which can be selected according to actual product requirements.

[0216] Exemplarily, as shown in FIG. 25 , the first damping layer 5 is located on the lower surface of the first stopping portion 31 , and a gap is provided between the first damping layer 5 and the first stopping block 32 .

[0217] That is, the first damping layer 5 and the first stop block 32 are not in contact. There is a certain distance between the first damping layer 5 and the first stop block 32 along the first direction Z. This ensures that the cantilever 21 has space to move downward along the first direction Z.

[0218] Exemplarily, the first damping layer 5 is located on the upper surface of the first stopping block 32 , and a gap is present between the first damping layer 5 and the first stopping portion 31 .

[0219] That is, the first damping layer 5 and the first stopper 31 are not in contact. There is a certain distance between the first damping layer 5 and the first stopper 31 along the first direction Z. This ensures that the cantilever 21 has space to move downward along the first direction Z.

[0220] The material of the first damping layer 5 includes but is not limited to polymer materials, such as parylene. The first damping layer 5 can provide a buffering effect.

[0221] In this way, when the pressure sensing chip 20 is subjected to a large upward impact in the first direction Z, the cantilever 21 has a large relative acceleration relative to the base 1, and the cantilever 21 moves rapidly downward in the first direction Z. At this time, the first damping layer 5 can contact the first stop block 32, or the first damping layer 5 can contact the first stop portion 31, cushioning the movement of the cantilever 21, thereby further protecting the cantilever 21.

[0222] Exemplarily, the lower surface of the first stopping portion 31 and the upper surface of the first stopping block 32 are both provided with the first damping layer 5 , and there is a certain distance between the two first damping layers 5 .

[0223] In this way, the movement of the cantilever 21 can be further buffered, thereby further protecting the cantilever 21 .

[0224] The second damping layer 6 may be arranged at various locations, which can be selected according to actual product requirements.

[0225] Exemplarily, the second damping layer 6 is located on the lower surface of the second stopping portion 41 , and a gap is provided between the second damping layer 6 and the second stopping block 42 .

[0226] That is, the second damping layer 6 and the second stop block 42 are not in contact. There is a certain distance between the second damping layer 6 and the second stop block 42 along the first direction Z. This ensures that the cantilever 21 has space to move upward along the first direction Z.

[0227] Exemplarily, as shown in FIG. 26 , the second damping layer 6 is located on the upper surface of the second stopping block 42 , and there is a gap between the second damping layer 6 and the second stopping portion 41 .

[0228] That is, the second damping layer 6 and the second stopper 41 are not in contact. There is a certain distance between the second damping layer 6 and the second stopper 41 along the first direction Z. This ensures that the cantilever 21 has space to move upward along the first direction Z.

[0229] The material of the second damping layer 6 includes, but is not limited to, polymer materials, such as parylene. The second damping layer 6 can provide a buffering effect.

[0230] In this way, when the pressure sensing chip 20 is subjected to a large impact in the first direction Z, the cantilever 21 has a large relative acceleration relative to the base 1, and the cantilever 21 moves rapidly upward in the first direction Z. At this time, the second damping layer 6 can contact the second stop block 42, or the second damping layer 6 can contact the second stop portion 41, thereby cushioning the movement of the cantilever 21 and further protecting the cantilever 21.

[0231] Exemplarily, the lower surface of the second stopping portion 41 and the upper surface of the second stopping block 42 are both provided with a second damping layer 6 , and there is a certain distance between the two second damping layers 6 .

[0232] In this way, the movement of the cantilever 21 can be further buffered, thereby further protecting the cantilever 21 .

[0233] In some embodiments of the present application, in the aforementioned sensing component 2, the cantilever 21 can be replaced with a rod structure, a plate structure 21a (as shown in FIG. 31 ), or a thin film structure 21b (as shown in FIG. 33 ). The width of the rod structure can be, for example, smaller than the width of the aforementioned cantilever 21. The width of the rod structure can be, for example, smaller than the width of the plate structure 21a. The thickness of the thin film structure 12b can be, for example, smaller than the thickness of the rod structure. The thickness of the thin film structure can also be, for example, smaller than the thickness of the plate structure 21a.

[0234] Optionally, any one of the rod structure, plate structure 21a, and membrane structure 21b is connected to at least one side of the base 1. Taking the rod structure as an example, the rod structure can be connected to one side of the base 1 to form a single-end support. Alternatively, the rod structure can be connected to multiple sides of the base 1 to form a multi-end support.

[0235] For example, as shown in FIG31 , assuming that the base 1 is a hollow rectangular frame structure, the cantilever 21 is replaced with a plate structure 21a, and the plate structure 21a is connected to two sides of the base 1. That is, the opposite ends of the plate structure 21a are respectively connected to the left inner wall and the right inner wall of the rectangular frame structure, forming two-end supports. The first stop assembly 3 and the second stop assembly 4 are each, for example, one, and are located on the upper and lower sides of the plate structure 21a, respectively. In conjunction with FIG31 and FIG32 , the second stop assembly 4 located on the upper side of the plate structure 21a can stop the upward movement of the plate structure 21a along the first direction Z, and the first stop assembly 3 located on the lower side of the plate structure 21a can stop the downward movement of the plate structure 21a along the first direction Z.

[0236] Optionally, the above-mentioned film structure 21b covers at least a portion of the cavity defined by the base 1. As shown in Figure 33, taking the base 1 as a hollow rectangular frame structure as an example, the film structure 21b completely covers the cavity defined by the base 1. The left end of the film structure 21b is connected to the base 1 to form a single-end support. In conjunction with Figures 33, 34a and 34b, the second stop assembly 4 located on the lower side of the film structure 21b can stop the upward movement of the plate structure 21a along the first direction Z, and the first stop assembly 3 located on the right side of the film structure 21b can stop the downward movement of the plate structure 21a along the first direction Z.

[0237] When the cantilever 21 is replaced by the thin film structure 21 b , an isolation layer 12 is further provided above the film layer where the thin film structure 21 b and the functional layer 13 are located.

[0238] It is understood that in the pressure sensor 200 described above, the configuration of the sensing component 2 (including but not limited to the number and position, etc.) can be arbitrarily set; the configuration of the first stop component 3 can be arbitrarily set, as long as it can stop the cantilever 21 from moving downward along the first direction Z; and the configuration of the second stop component 4 can be arbitrarily set, as long as it can stop the cantilever 21 from moving upward along the first direction Z. Furthermore, the configuration of the sensing component 2, the configuration of the first stop component 3, and the configuration of the second stop component 4 can be freely combined.

[0239] Some embodiments of the present application also provide two methods for preparing pressure sensor chips, which are used to prepare the pressure sensor chip 20 described in any of the above embodiments. Of course, the method for preparing a pressure sensor chip is not limited to this. Among them, the preparation methods used for the pressure sensor chips 20 in the above different embodiments are, for example, the same, except that the etching removal area of ​​the film layer is different. The preparation method is schematically described below using the pressure sensor chip 20 shown in Figure 11a as an example.

[0240] The first method for preparing a pressure sensing chip includes, for example, steps S100a to S500a.

[0241] S100a, as shown in FIG35a, forms a stacked structure comprising a handle layer (HL) 7, at least one buried oxide layer (BL) 8, and a device layer (DL) 9 stacked in sequence along a first direction Z. FIG35a schematically shows a buried oxide layer 8.

[0242] For example, the above-mentioned stacked structure may also be referred to as a silicon-on-insulator (SOI) structure.

[0243] S200a, as shown in FIG35b, etches the device layer 9 according to the predetermined removal area to form an isolation trench ST, thereby obtaining the functional layer 13, the cantilever 21, and the first stopper 31. The removal area corresponds to the blank area between the functional layer 13, the cantilever 21, and the first stopper 31 in FIG10. The buried oxide layer 8 is then etched through the isolation trench ST to form an overetched area.

[0244] 35c , the substrate layer 7 is etched from the side away from the buried oxide layer 8 to form a second stopper 42 . Along the first direction Z, the height of the second stopper 42 is less than that of the substrate layer 7 .

[0245] S400a, as shown in FIG35d, uses a deep reactive ion etching (DRIE) process to continue etching the substrate layer 7 to form a back cavity and a support layer 11.

[0246] S500a, as shown in FIG35e, the buried oxide layer 8 is etched from the side of the buried oxide layer 8 away from the functional layer 13 to form an isolation layer 12. In this process, the buried oxide layer 8 can be overetched to connect the back cavity and the overetched area.

[0247] The second method for preparing the pressure sensing chip, for example, includes: S100b to S400b.

[0248] S100b, as shown in FIG35a, a stacked structure is formed, the stacked structure comprising a substrate layer 7, at least one buried oxide layer 8 and a device layer 9 stacked in sequence along a first direction Z. FIG35a schematically shows a buried oxide layer 8.

[0249] S200b, as shown in FIG36a, etches the device layer 9 according to the predetermined removal area to form isolation trenches ST and multiple through-holes H, thereby obtaining the functional layer 13, cantilever 21, and first stopper 31. The removal area corresponds to the blank area between the functional layer 13, cantilever 21, and first stopper 31 in FIG10. The provision of through-holes H facilitates the passage of fluid through through-holes H to etch the buried oxide layer 8.

[0250] S300b, as shown in FIG36b, the substrate layer 7 is etched from the side away from the buried oxide layer 8 to form a back cavity, a support layer 11 and a second stop block 42. In the first direction Z, the height of the second stop block 42 is less than the height of the support layer 11.

[0251] S400b, as shown in FIG36c, the buried oxide layer 8 is etched from the side away from the functional layer 13 to form the isolation layer 12. In this process, the buried oxide layer 8 can be overetched to connect the back cavity, the isolation trench ST and the plurality of through holes H.

[0252] In the above-mentioned two methods for preparing pressure sensing chips, if the pressure sensing chip 20 includes a first damping layer 5 and / or a second damping layer 6, for example, vacuum vapor deposition, evaporation and other processes can be used to form a first damping layer 5 between the first stop portion 31 and the first stop block 32, and a second damping layer 6 between the second stop portion 41 and the second stop block 42.

[0253] The above description is merely a specific embodiment of the present application, but the scope of protection of the present application is not limited thereto. Any changes or substitutions that a person skilled in the art can conceive within the technical scope disclosed in this disclosure should be included within the scope of protection of the present application. Therefore, the scope of protection of the present application should be based on the scope of protection of the claims.

Claims

1. A pressure sensing chip, characterized in that: The pressure sensing chip comprises: Pedestal; At least one sensing component, comprising a cantilever and a stress detection unit; the cantilever is connected to the base, and the stress detection unit is located on at least one side surface of the cantilever; the material of the stress detection unit comprises a piezoelectric material or a piezoresistive material; At least one first stopper assembly comprises a first stopper and a first stopper block; the first stopper is connected to the cantilever; the first stopper block is connected to the base; along a first direction, the first stopper is arranged above the first stopper block at intervals; in an orthographic projection onto a reference plane, the first stopper and the first stopper block partially overlap; the first direction is a thickness direction of the cantilever, and the first direction is perpendicular to the reference plane; At least one second stop assembly includes a second stop portion and a second stop block; the second stop portion is connected to the base, and the second stop block is connected to the cantilever; the second stop block has a protrusion, and in the orthographic projection onto the reference plane, the protrusion protrudes from the cantilever; along the first direction, the second stop portion is spaced above the protrusion; in the orthographic projection onto the reference plane, the second stop portion and the protrusion partially overlap.

2. The pressure sensing chip according to claim 1, characterized in that: The base comprises a supporting layer, at least one insulating layer and a functional layer which are stacked; The cantilever, the first stopper, the second stopper and the functional layer are arranged in the same layer; and / or, The first stop block, the second stop block and the support layer are arranged on the same layer.

3. The pressure sensing chip according to claim 1, characterized in that: The base comprises a supporting layer, a multi-layer isolation layer and a functional layer which are stacked; The cantilever, the first stopper, the second stopper and the functional layer are arranged in the same layer; and / or, The first stop block is at least arranged on the same layer as the support layer; and / or, The second stop block is arranged in the same layer as a target isolation layer in the multi-layer isolation layer, and at least one isolation layer is arranged between the target isolation layer and the functional layer.

4. The pressure sensing chip according to claim 2 or 3, characterized in that: In an orthographic projection onto the reference plane, the second stopper protrudes beyond the functional layer.

5. The pressure sensing chip according to any one of claims 2 to 4, characterized in that: A portion of the functional layer constitutes the second stopper; The pressure sensing chip has a first notch, and the first notch is located below the second stopper; A portion of the second stopping block extends into the first notch.

6. The pressure sensing chip according to any one of claims 2 to 5, characterized in that: A portion of the cantilever constitutes the first stop portion; The pressure sensing chip further has a second notch, and the second notch is located below the first stopper; A portion of the first stopping block extends into the second notch.

7. The pressure sensing chip according to any one of claims 1 to 6, characterized in that: In the orthographic projection onto the reference plane, at least one connecting structure is provided in a portion of the first stop portion that overlaps with the first stop block; The communication structure communicates the gap between the first stopper and the first stopper block; and / or, In the orthographic projection onto the reference plane, a portion of the second stop portion that overlaps with the second stop block is provided with at least one connecting structure; The communication structure communicates the gap between the second stopping portion and the second stopping block.

8. The pressure sensing chip according to any one of claims 1 to 7, characterized in that: The pressure sensing chip further comprises: a first damping layer; The first damping layer is located on the lower surface of the first stopper, and there is a gap between the first damping layer and the first stopper; and / or, The first damping layer is located on the upper surface of the first stopping block, and there is a gap between the first damping layer and the first stopping portion.

9. The pressure sensing chip according to any one of claims 1 to 8, characterized in that: The pressure sensing chip further includes: a second damping layer; The second damping layer is located on the lower surface of the second stopper, and there is a gap between the second damping layer and the second stopper; and / or, The second damping layer is located on the upper surface of the second stopping block, and there is a gap between the second damping layer and the second stopping portion.

10. The pressure sensing chip according to any one of claims 1 to 9, characterized in that: The cantilever can be replaced by a rod structure, a plate structure or a film structure; Any one of the rod structure, the half structure and the membrane structure is connected to at least one side of the base; Alternatively, the film structure covers at least a portion of the cavity defined by the base.

11. A pressure sensor, characterized in that: include: The pressure sensing chip as claimed in any one of claims 1 to 10; A dedicated integrated circuit chip is electrically connected to the pressure sensing chip.

12. An electronic device, characterized in that: include: Circuit boards; The pressure sensor according to claim 11, electrically connected to the circuit board.

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