Method for manufacturing group iii nitride semiconductor template with improvement in quality of bonding layer

By employing a two-stage heat treatment process during the bonding layer formation in the manufacturing of group 3-type nitride semiconductor templates, the method addresses issues of leakage current and crystalline quality, resulting in improved bonding force and device reliability.

WO2025058145A1PCT designated stage expired Publication Date: 2025-03-20WAVELORD CO LTD
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Patent Information

Application Number
PCT/KR2024/000819
Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
Priority Date
2023-09-14
Filing Date
2024-01-17
Publication Date
2025-03-20

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Abstract

The present invention relates to a method for manufacturing a group III nitride semiconductor template with an improvement in the quality of a bonding layer and, more specifically, to a method for manufacturing a group III nitride semiconductor template including a high-quality group III nitride semiconductor seed layer, wherein the quality of the bonding layer can be significantly improved by performing heat treatment on the bonding layer in two steps, according to the temperature.
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Citation Information

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