Light emitting device-thin film transistor integration structure and manufacturing method therefor

WO2025058187A1PCT designated stage expired Publication Date: 2025-03-20KOREA UNIV RES & BUSINESS FOUND
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Patent Information

Application Number
PCT/KR2024/008731
Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
Priority Date
2023-09-13
Filing Date
2024-06-24
Publication Date
2025-03-20

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Abstract

The present invention relates to a light emitting device-thin film transistor integration structure and a manufacturing method therefor, the integration structure, according to one embodiment, comprising: a thin film transistor formed on a substrate; an upper insulating layer formed on the thin film transistor; an upper electrode formed on the upper insulating layer; a micro-hole formed in regions of the upper electrode and upper insulating layer corresponding to a first electrode of the thin film transistor, so as to expose a preset region of the first electrode to the outside; and a light emitting device formed in the micro-hole so as to be electrically connected to the first electrode.
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Citation Information

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