Array substrate and display apparatus

Abstract

Provided in the present disclosure are an array substrate and a display apparatus. The array substrate comprises: a base substrate comprising a dicing street region and a non-dicing street region, the non-dicing street region containing a display area; a filling layer on the base substrate and in the dicing street region, the filling layer at least comprising a layer different from a film layer of the display area; a functional layer on the base substrate and in the non-dicing street region; and evaporative deposition layers comprising a first evaporative deposition layer and a second evaporative deposition layer which are separated from each other, the first evaporative deposition layer being located in the dicing street region, and the second evaporative deposition layer being located in the non-dicing street region. The first evaporative deposition layer is located on the side of the filling layer away from the base substrate and is in contact with the filling layer. The second evaporative deposition layer is located on the side of the functional layer away from the base substrate and is contact with the functional layer. A first distance between an upper surface of the filling layer and an upper surface of the base substrate and a second distance between an upper surface of the functional layer and the upper surface of the base substrate are basically equal to each other.

Description

Array substrate, display device Technical Field

[0001] The present disclosure relates to the field of display technology, and in particular to an array substrate and a display device. Background Art

[0002] Organic Light Emitting Diode (OLED) display devices have the advantages of thin thickness, light weight, wide viewing angle, active light emission, continuously adjustable light color, low cost, fast response speed, low energy consumption, low driving voltage, wide operating temperature range, simple production process, high luminous efficiency and flexible display. They are increasingly used in display fields such as mobile phones, tablet computers, and digital cameras.

[0003] Summary of the Invention

[0004] According to one aspect of the present disclosure, an array substrate is provided, comprising: a substrate including a cutting path area and a non-cutting path area, wherein the non-cutting path area includes a display area; a filling layer located on the substrate and in the cutting path area, wherein the filling layer includes at least a layer different from the film layer of the display area; a functional layer located on the substrate and in the non-cutting path area; and an evaporation layer including a first evaporation layer and a second evaporation layer separated from each other, wherein the first evaporation layer is located in the cutting path area and the second evaporation layer is located in the non-cutting path area. The first evaporation layer is located on a side of the filling layer away from the substrate and in contact with the filling layer, and the second evaporation layer is located on a side of the functional layer away from the substrate and in contact with the functional layer, a first distance is defined between a surface of the filling layer away from the substrate and a surface of the substrate near the filling layer, and a second distance is defined between a surface of the functional layer away from the substrate and a surface of the substrate near the filling layer, wherein the first distance and the second distance are substantially equal.

[0005] In some embodiments, the scribe line area includes a test area, the test area is spaced apart from the non-scribe line area, and the filling layer and the first evaporated layer are located in the test area.

[0006] In some embodiments, the array substrate further includes an insulating layer, the insulating layer is located in the non-slicing street area and between the substrate and the functional layer, and the insulating layer is spaced apart from the filling layer.

[0007] In some embodiments, a space between the insulating layer and the filling layer is filled with an encapsulation material, and the encapsulation material contacts both an edge of the filling layer and an edge of the insulating layer.

[0008] In some embodiments, a distance between the insulating layer and the filling layer is greater than or equal to 200 nm.

[0009] In some embodiments, the insulating layer includes at least two stacked layers, and edges of the at least two layers close to the filling layer have different distances from the filling layer.

[0010] In some embodiments, the filling layer includes a stacked first filling layer and a second filling layer, the first filling layer is located between the substrate and the first evaporated layer, the second filling layer is located between the first filling layer and the first evaporated layer, and the distance between the surface of the second filling layer away from the substrate and the surface of the substrate close to the first filling layer is the first distance.

[0011] In some embodiments, the orthographic projection of the first evaporated layer on the substrate falls within the orthographic projection of the second filling layer on the substrate.

[0012] In some embodiments, the first filling layer includes a first edge and a second edge relative to each other, the second filling layer includes a third edge and a fourth edge relative to each other, the first edge is closer to the non-cutting area relative to the second edge, the third edge is closer to the non-cutting area relative to the fourth edge, and the orthographic projection of the third edge on the substrate falls within the orthographic projection of the first edge on the substrate.

[0013] In some embodiments, the first evaporated layer includes a main body, a first shadow portion and a second shadow portion, the first shadow portion and the second shadow portion are adjacent to each other and the first shadow portion is located between the main body and the second shadow portion, and the thickness of the first shadow portion and the second shadow portion are both less than the thickness of the main body.

[0014] In some embodiments, a distance between an orthographic projection of a boundary line between the first shadow portion and the second shadow portion on the substrate and an orthographic projection of a first edge of the first filling layer on the substrate is greater than or equal to a length of the second shadow portion in the first direction.

[0015] In some embodiments, the main body of the first evaporated layer includes a fifth edge, the fifth edge is substantially aligned with the fourth edge of the second filling layer, and the distance from the fifth edge to the boundary between the first shadow portion and the second shadow portion is d4, and d4 satisfies the inequality Among them, a is the length of the sampling area of ​​the first vapor-deposited layer in the first direction, b is the length of the first shadow part in the first direction, c is the width of the cutting wheel, and e is the cutting accuracy.

[0016] In some embodiments, W1≥W2+2×W3, W1 is the width of the first evaporated layer in the second direction, W2 is the width of the sampling area of ​​the first evaporated layer in the second direction, W3 is the width of the first shadow portion in the second direction, and the second direction is in the same plane as the first direction and is perpendicular to the first direction.

[0017] In some embodiments, an area of ​​an orthographic projection of a main portion of the first evaporated layer on the substrate is larger than a sum of areas of orthographic projections of the first shadow portion and the second shadow portion on the substrate.

[0018] In some embodiments, the first filling layer includes at least two stacked layers, and edges of the at least two layers close to the non-slice area have different distances from the non-slice area.

[0019] In some embodiments, the thickness of the first filling layer is greater than the thickness of the second filling layer.

[0020] In some embodiments, the material of the first filling layer is an organic material, and the material of the second filling layer is an inorganic material.

[0021] In some embodiments, the fill layer is a single layer.

[0022] In some embodiments, the orthographic projection of the first evaporated layer on the substrate is in the shape of a square, a rectangle, a circle, or a polygon.

[0023] In some embodiments, the evaporated layer is an organic light-emitting layer, and the functional layer is an anode of an organic light-emitting diode device.

[0024] In some embodiments, the array substrate further includes: a cathode located on a side of the second evaporated layer away from the substrate and arranged in the non-cutting area; and an encapsulation layer located on a side of the cathode away from the substrate and arranged in the cutting area and the non-cutting area, and filling the spacing area between the cathode and the filling layer.

[0025] According to another aspect of the present disclosure, a display device is provided, which includes the array substrate described in any one of the above embodiments. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Hereinafter, various exemplary embodiments of the present disclosure will be described in detail with reference to the accompanying drawings, in which:

[0027] FIG1 shows a schematic structural diagram of an array substrate;

[0028] FIG2 shows a test curve of the discontinuity between two film layers located in different areas in FIG1 ;

[0029] FIG3 shows a top view of a wafer including several array substrates according to an embodiment of the present disclosure;

[0030] FIG4 is a schematic cross-sectional view showing a partial structure of an array substrate according to an embodiment of the present disclosure;

[0031] FIG5 shows a test curve of the cross-sectional difference between two film layers located in different areas in FIG4 ;

[0032] FIG6 shows an enlarged schematic diagram of the first evaporated layer in FIG4 ;

[0033] FIG7 is a schematic diagram showing the principle of the evaporation shadow formed when the evaporation layer is prepared using a mask;

[0034] FIG8 is a schematic cross-sectional view showing a partial structure of another array substrate according to an embodiment of the present disclosure;

[0035] FIG9 shows a cross-sectional schematic diagram of a partial structure of another array substrate according to an embodiment of the present disclosure; and

[0036] FIG10 shows a schematic structural diagram of a display device according to an embodiment of the present disclosure.

[0037] It should be understood that the accompanying drawings are merely schematic illustrations of exemplary embodiments of the present disclosure and are not intended to limit the present disclosure and are not necessarily drawn to scale. In addition, in the accompanying drawings, identical or similar components are indicated by identical or similar reference numerals. DETAILED DESCRIPTION

[0038] The following will clearly describe the technical solutions in the embodiments of the present disclosure in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present disclosure, not all of them. Based on the embodiments of the present disclosure, all other embodiments obtained by ordinary technicians in this field without making any creative efforts are within the scope of protection of the present disclosure.

[0039] Before formally describing the technical solutions of the embodiments of the present disclosure, the following explanations and definitions are given for the terms used in the embodiments of the present disclosure to help those skilled in the art to more clearly understand the technical solutions of the embodiments of the present disclosure.

[0040] As used herein, terms such as "the height of layer A" refer to the height of layer A relative to a substrate on which layer A is disposed. Specifically, "the height of layer A" is equal to the distance between the surface of layer A away from the substrate and the surface of the substrate close to layer A.

[0041] As used herein, terms such as "distance A is substantially equal to distance B" or "thickness A is substantially equal to thickness B" mean that the difference between distance A and distance B, or the difference between thickness A and thickness B, needs to account for variations due to factors such as manufacturing techniques and / or tolerances. For example, the difference between distance A and distance B, or the difference between thickness A and thickness B, may be within a certain threshold range.

[0042] Figure 1 shows a schematic structural diagram of an array substrate 10 in the related art. As shown in Figure 1 , the array substrate 10 includes a substrate 11, an organic light-emitting layer 12, an insulating layer 13, an anode 17, a cathode 18, and other structures. During the semiconductor chip packaging process, the chip needs to be cut to form multiple units, with the cutting process typically performed in the cutting lane area. As shown in Figure 1 , the array substrate 10 includes a cutting lane area and a non-cutting lane area. The cutting lane area includes a TEG (Test Element Group) area, and the non-cutting lane area includes an AA area (also known as a display area). A portion of the organic light-emitting layer 12 is located in the TEG area for thickness measurement, while another portion of the organic light-emitting layer 12 is located in the non-cutting lane area for light emission. The insulating layer 13 includes a first insulating layer 14, a second insulating layer 15, and a third insulating layer 16. Since the organic light-emitting layer 12 in the TEG area and the organic light-emitting layer 12 in the non-cutting lane area are formed through the same process, the thickness of the organic light-emitting layer 12 in the non-cutting lane area is typically monitored by measuring the thickness of the organic light-emitting layer 12 in the TEG area.

[0043] In the array substrate 10, the base height of the organic light-emitting layer 12 in the TEG region differs significantly from the base height of the organic light-emitting layer 12 in the non-strip region. The term "base height of the organic light-emitting layer 12" refers to the height of the film layer supporting the organic light-emitting layer 12 relative to the substrate 11. Specifically, the organic light-emitting layer 12 in the TEG region is arranged on and supported by the substrate 11. Therefore, the base height of the organic light-emitting layer 12 in the TEG region can be considered equal to zero. The organic light-emitting layer 12 in the non-strip region is arranged on and supported by the anode 17. Therefore, the base height of the organic light-emitting layer 12 in the non-strip region refers to the height of the anode 17 relative to the substrate 11, which is approximately equal to the thickness of the first insulating layer 14 + the thickness of the second insulating layer 15 + the thickness of the third insulating layer 16 + the thickness of the anode 17. Figure 2 shows the profile test curves of the two film layers in Figure 1, where Position 1 refers to the surface of the substrate 11 close to the organic light-emitting layer 12, and Position 2 refers to the surface of the third insulating layer 16 away from the substrate 11. The coordinate difference ΔX between Position 1 and Position 2 along the X direction is 30.185 μm, and the coordinate difference ΔY between Position 1 and Position 2 along the Y direction (i.e., the thickness direction of the substrate 11) is 1.903 μm. Based on the above, it can be concluded that the base height difference between the organic light-emitting layer 12 in the TEG area and the organic light-emitting layer 12 in the non-cutting area is approximately equal to ΔY + the thickness of the anode 17, that is, the difference between the base height of the organic light-emitting layer 12 in the TEG area and the base height of the organic light-emitting layer 12 in the non-cutting area is greater than 1.903 μm.

[0044] The organic light-emitting layer 12 in the TEG region and the organic light-emitting layer 12 in the non-cutting street region are prepared using the same mask. During the preparation stage, the mask is placed opposite the substrate 11, and the organic material is evaporated to the corresponding position through the opening of the mask to form the organic light-emitting layer 12. However, since the base height of the organic light-emitting layer 12 in the TEG region is significantly different from the base height of the organic light-emitting layer 12 in the non-cutting street region (greater than 1.903 μm), the distance between the opening of the mask and the substrate 11 in the TEG region is much greater than the distance from the anode 17 in the non-cutting street region. As known to those skilled in the art, due to the evaporation shadow effect, the farther the opening of the mask is from the position where the evaporated layer is to be formed, the more uneven the thickness of the formed film layer. Therefore, compared with the organic light-emitting layer 12 formed in the non-cutting street region, the thickness uniformity of the organic light-emitting layer 12 formed in the TEG region is poor, and the thickness of the organic light-emitting layer 12 in the TEG region can no longer represent the thickness of the organic light-emitting layer 12 in the non-cutting street region. Therefore, the thickness of the organic light emitting layer 12 in the non-street area cannot be monitored by detecting the thickness of the organic light emitting layer 12 in the TEG area, resulting in failure in monitoring the thickness of the organic light emitting layer 12 in the non-street area.

[0045] In view of this, an embodiment of the present disclosure provides an array substrate, comprising: a substrate including a cutting path area and a non-cutting path area, wherein the non-cutting path area includes a display area; a filling layer located on the substrate and arranged in the cutting path area, wherein the filling layer includes at least a layer different from the film layer in the display area; a functional layer located on the substrate and arranged in the non-cutting path area; and an evaporation layer including a first evaporation layer and a second evaporation layer separated from each other, wherein the first evaporation layer is arranged in the cutting path area, and the second evaporation layer is arranged in the non-cutting path area. The first evaporation layer is located on a side of the filling layer away from the substrate and in contact with the filling layer, and the second evaporation layer is located on a side of the functional layer away from the substrate and in contact with the functional layer, wherein the distance between the surface of the filling layer away from the substrate and the surface of the substrate near the filling layer is a first distance, and the distance between the surface of the functional layer away from the substrate and the surface of the substrate near the filling layer is a second distance, and the first distance and the second distance are substantially equal. For example, considering the deviation caused by factors such as manufacturing technology and / or tolerance, the difference between the first distance and the second distance can be within a certain threshold range, which can be, for example, ±10nm, ±9nm, ±8nm, etc., which is basically negligible.

[0046] The filling layer may be a single layer or may include multiple layers. It should be noted that the expression "the filling layer includes at least a layer different from the film layer in the display area" means that at least one layer of the filling layer is only provided in the cutting lane area but not in the display area, and each film layer included in the display area is different from the at least one layer.

[0047] By adding a filling layer in the cutting path area, the first distance between the surface of the filling layer away from the substrate and the surface of the substrate close to the filling layer and the second distance between the surface of the functional layer away from the substrate and the surface of the substrate close to the filling layer are substantially equal. When using a mask to prepare the vapor deposition layer, the mask is set on the side of the filling layer and the functional layer away from the substrate, and the organic material is evaporated to the corresponding position through the opening of the mask to form the first vapor deposition layer and the second vapor deposition layer. Since the first distance is substantially equal to the second distance, the distance between the opening of the mask and the filling layer and the distance between the opening of the mask and the functional layer are substantially consistent. Therefore, the first vapor deposition layer formed in the cutting path area and the second vapor deposition layer formed in the non-cutting path area have substantially the same thickness, that is, the thickness of the first vapor deposition layer can represent the thickness of the second vapor deposition layer. Therefore, the thickness of the first vapor deposition layer detected by the testing instrument can represent the thickness of the second vapor deposition layer, so as to achieve effective monitoring of the thickness of the second vapor deposition layer in the non-cutting path area, which greatly improves the monitorability of the thickness of the second vapor deposition layer during the preparation process.

[0048] The structures of several different array substrates provided by various embodiments of the present disclosure are described in detail below with reference to several drawings.

[0049] Figure 3 shows a top view of a wafer. Multiple array substrates are formed on the wafer in an array arrangement, where each rectangle represents an array substrate. By cutting the wafer along predetermined cutting lines, multiple independent array substrates can be obtained.

[0050] FIG4 illustrates a cross-sectional schematic diagram of a partial structure of an array substrate 100 according to an embodiment of the present disclosure. As shown in FIG4 , the array substrate 100 includes: a substrate 101, which includes a cut-street region and a non-cut-street region, wherein the non-cut-street region includes a display region (or AA region); a filling layer 102 located on the substrate 101 and within the cut-street region; a functional layer 103 located on the substrate 101 and within the non-cut-street region; and an evaporation layer 104, which includes a first evaporation layer 1041 and a second evaporation layer 1042 separated from each other, wherein the first evaporation layer 1041 is located within the cut-street region and the second evaporation layer 1042 is located within the non-cut-street region. The thickness of the second evaporation layer 1042 within the non-cut-street region is typically monitored by measuring the thickness of the first evaporation layer 1041 within the cut-street region. The first evaporated layer 1041 is located on the side of the filling layer 102 away from the substrate 101 and in contact with the filling layer 102. The second evaporated layer 1042 is located on the side of the functional layer 103 away from the substrate 101 and in contact with the functional layer 103. The distance between the surface of the filling layer 102 away from the substrate 101 and the surface of the substrate 101 near the filling layer 102 is a first distance S1, and the distance between the surface of the functional layer 103 away from the substrate 101 and the surface of the substrate 101 near the filling layer 102 is a second distance S2. The first distance S1 and the second distance S2 are substantially equal. For example, to account for deviations caused by factors such as manufacturing technology and / or tolerances, the difference between the first distance S1 and the second distance S2 can be within a preset threshold range, such as ±10 nm, ±9 nm, ±8 nm, etc., which is substantially negligible.

[0051] By adding the filling layer 102 to the scribe line area, the first distance S1 and the second distance S2 can be made substantially equal, thereby ensuring that along the thickness direction D3 of the substrate 101, the base height of the first evaporated layer 1041 (i.e., the height of the filling layer 102 relative to the substrate 101) and the base height of the second evaporated layer 1042 (i.e., the height of the functional layer 103 relative to the substrate 101) are substantially equal. In this way, when the evaporated layer 104 is prepared using a mask, the distance between the mask opening and the filling layer 102 and the functional layer 103 is substantially the same. Therefore, the thickness of the first evaporated layer 1041 formed in the scribe line area and the thickness of the second evaporated layer 1042 formed in the non-scribe line area are substantially the same, that is, the thickness of the first evaporated layer 1041 can represent the thickness of the second evaporated layer 1042. Thus, the thickness of the second evaporated layer 1042 can be monitored by detecting the thickness of the first evaporated layer 1041, so as to achieve effective monitoring of the thickness of the second evaporated layer 1042 in the non-cutting area, which greatly improves the monitorability of the thickness of the second evaporated layer 1042 during the preparation process.

[0052] As shown in FIG4 , the filling layer 102 includes a stacked first filling layer 1021 and a second filling layer 1022. The first filling layer 1021 is located between the substrate 101 and the first evaporated layer 1041, and the second filling layer 1022 is located between the first filling layer 1021 and the first evaporated layer 1041. When the filling layer 102 includes the stacked first filling layer 1021 and the second filling layer 1022, the first distance S1 refers to the distance between the surface of the second filling layer 1022 away from the substrate 101 and the surface of the substrate 101 closer to the first filling layer 1021. The first distance S1 and the second distance S2 are substantially equal. Because the first distance S1 needs to be precisely controlled, the thickness of the filling layer 102 also needs to be precisely controlled. By making the filling layer 102 include a first filling layer 1021 and a second filling layer 1022, the thickness of the filling layer 102 depends not only on the thickness of the first filling layer 1021, but also on the thickness of the second filling layer 1022. In this way, the overall thickness value of the filling layer 102 can be corrected by adjusting the thickness of the second filling layer 1022, thereby helping to greatly reduce the process difficulty of accurately controlling the thickness of the first filling layer 1021.

[0053] The second filling layer 1022 is primarily used to fine-tune the overall thickness of the filling layer 102 to ensure that the first distance S1 and the second distance S2 are substantially equal. The second filling layer 1022 is disposed only within the scribe line area and does not extend into the display area. Each film layer in the display area is distinct from the second filling layer 1022.

[0054] The thickness of the first filling layer 1021 is greater than that of the second filling layer 1022. The material of the first filling layer 1021 is typically an organic material, while the material of the second filling layer 1022 is typically an inorganic material. The primary function of the first filling layer 1021 is to partially cover the thickness of the filling layer 102. Since organic layers can deposit thicker films, the material of the first filling layer 1021 is typically an organic material, and the thickness of the first filling layer 1021 is greater than that of the second filling layer 1022. The primary function of the second filling layer 1022 is to refine and ensure that the first distance S1 and the second distance S2 are substantially equal. Since the deposition accuracy of inorganic layers is typically higher than that of organic layers, the material of the second filling layer 1022 is typically an inorganic material. On the other hand, by making the material of the second filling layer 1022 an inorganic material, in the cutting path area, the material of the first evaporated layer 1041 is an organic material, and the second filling layer 1022 in contact with the first evaporated layer 1041 is an inorganic material; in the display area, the material of the second evaporated layer 1042 is an organic material, and the functional layer 103 in contact with the second evaporated layer 1042 is an inorganic material. Therefore, the environment in which the first evaporated layer 1041 is located is the same as the environment in which the second evaporated layer 1042 is located, thereby further ensuring that the thickness of the formed first evaporated layer 1041 is the same as the thickness of the second evaporated layer 1042, and the thickness detection value of the first evaporated layer 1041 can more accurately represent the thickness of the second evaporated layer 1042, thereby further improving the credibility of the thickness detection data of the first evaporated layer 1041.

[0055] In some embodiments, the thickness of the second filling layer 1022 may be substantially equal to the thickness of the functional layer 103. This helps to further ensure that, along the thickness direction of the substrate 101, the surface of the second filling layer 1022 away from the substrate 101 and the surface of the functional layer 103 away from the substrate 101 are located at the same height, thereby further ensuring that the base height of the first evaporated layer 1041 and the base height of the second evaporated layer 1042 are substantially equal.

[0056] Figure 5 shows the profile test curves for the two film layers in Figure 4 , where test position 3 refers to the surface of the first filling layer 1021 away from the substrate 101, and test position 4 refers to the surface of the third insulating layer 1053 away from the substrate 101. The coordinate difference ΔX between test positions 3 and 4 along the X direction is 71.053 μm, and the coordinate difference ΔY between test positions 3 and 4 along the Y direction (i.e., the thickness direction of the substrate 101) is 8.033 nm. The first evaporated layer 1041 is arranged on and in direct contact with the second filling layer 1022, and the second evaporated layer 1042 is arranged on and in direct contact with the functional layer 103. Since the thickness of the second filling layer 1022 is substantially equal to that of the functional layer 103, it can be assumed that the base height of the first evaporated layer 1041 and the base height of the second evaporated layer 1042 along the thickness direction of the substrate 101 differ by only 8.033 nm. Compared with the related art in which the base height of the organic light-emitting layer 12 in the TEG area differs from the base height of the organic light-emitting layer 12 in the non-cutting area by more than 1.903 μm, the difference between the base height of the first evaporated layer 1041 and the base height of the second evaporated layer 1042 in the embodiment of the present disclosure is significantly reduced, and the difference is basically negligible. Therefore, when using a mask to prepare the evaporated layer 104, the distance between the opening of the mask and the second filling layer 1022 and the distance from the functional layer 103 are basically the same. Therefore, the first evaporated layer 1041 formed in the cutting area and the second evaporated layer 1042 formed in the non-cutting area have substantially the same thickness. Therefore, the thickness of the second evaporated layer 1042 can be effectively monitored by detecting the thickness of the first evaporated layer 1041, which greatly improves the monitorability of the thickness of the second evaporated layer 1042 during the preparation process.

[0057] In some embodiments, the orthographic projection of the first evaporated layer 1041 on the substrate 101 falls within the orthographic projection of the second filling layer 1022 on the substrate 101, and the orthographic projection of the second evaporated layer 1042 on the substrate 101 falls within the orthographic projection of the functional layer 103 on the substrate 101. In this way, it is ensured that the first evaporated layer 1041 is completely disposed on the second filling layer 1022, and the second evaporated layer 1042 is completely disposed on the functional layer 103. Therefore, as long as the first distance S1 between the surface of the second filling layer 1022 away from the substrate 101 and the surface of the substrate 101 near the first filling layer 1021 and the second distance S2 between the surface of the functional layer 103 away from the substrate 101 and the surface of the substrate 101 near the first filling layer 1021 are substantially equal, it is ensured that the thickness of the first evaporated layer 1041 and the second evaporated layer 1042 formed are substantially the same.

[0058] The shape of the orthographic projection of the first evaporated layer 1041 on the substrate 101 can be various appropriate shapes, including but not limited to square, rectangle, circle, polygon, etc.

[0059] As shown in Figure 4, the scribe line area includes a TEG area (or test area), in which the first filling layer 1021, the second filling layer 1022, and the first evaporated layer 1041 are all located. By measuring the thickness of the first evaporated layer 1041 in the TEG area, the thickness of the second evaporated layer 1042 in the non-scribe line area is monitored. The scribe line area may also include an encapsulation layer deep-seated area, in which at least a portion of the encapsulation layer 106 is filled.

[0060] For example, as shown in FIG4 , the non-cutting lane area can be divided into an AA area (or display area), a pixel shift region, a dummy pixel region, a sensing region, a cathode ring region, an insulating layer edge region, and the like. In some embodiments, the evaporated layer 104 can be an organic light-emitting layer. When the evaporated layer 104 is an organic light-emitting layer, the portion of the second evaporated layer 1042 located in the AA area is used to emit light for displaying an image. The mobile pixel area can serve as an auxiliary area for the AA area. Since the optical machine of the display device is usually manually installed by professionals, there will be a certain deviation in the mechanical alignment accuracy. By fine-tuning the AA area toward the adjacent mobile pixel area, the alignment accuracy can be compensated. The portion of the second evaporated layer 1042 located in the mobile pixel area can also emit light. The dummy pixel area is used to improve the edge uniformity of the AA area and the mobile pixel area, thereby helping to improve the overall uniformity of the AA area. The portion of the second evaporated layer 1042 located in the dummy pixel area may not emit light. In the case where the evaporated layer 104 is an organic light-emitting layer, the array substrate 100 is an organic light-emitting diode (OLED) array substrate. Since the luminous efficiency of the OLED device changes at different temperatures, it is necessary to monitor the temperature of the array substrate to regulate the pixel voltage of the AA area in real time, and the temperature of the array substrate is usually monitored in the sensing area. The portion of the second evaporated layer 1042 located in the sensing area can emit light. The functional layer 103 can be the anode of the OLED device, and in the cathode ring area, the functional layer 103 is connected to the cathode 107 to form a closed loop. In the mobile pixel area, the dummy pixel area, the sensing area, the cathode ring area, and the insulating layer edge area, except for the sensing area, other areas can be surrounded by the periphery of the AA area in the form of a rectangular ring. In some embodiments, the sensing area can be arranged only on two opposite sides of the periphery of the AA area.

[0061] As shown in Figure 4, the array substrate 100 may further include an insulating layer 105, which is arranged in the non-cutting area and located between the substrate 101 and the functional layer 103, and the filling layer 102 is spaced apart from the insulating layer 105. If the filling layer 102 and the insulating layer 105 are in contact with each other, during the cutting process, the cutting stress will extend toward the center of the AA area along the direction from the filling layer 102 to the insulating layer 105, thereby causing the film layer in the AA area to peel off. In an embodiment of the present disclosure, by spacing the filling layer 102 and the insulating layer 105 apart from each other, the transmission path of the cutting stress is broken during the cutting process, and the stress will not be transmitted from the filling layer 102 to the insulating layer 105, thereby preventing the film layer in the AA area from peeling off. The insulating layer 105 is typically an inorganic layer.

[0062] Exemplarily, the spacing d1 between the filling layer 102 and the insulating layer 105 can be greater than or equal to 200nm. The spacing d1 needs to be designed to a reasonable value, neither too large nor too small. The spacing d1 cannot be too small because, during the preparation process, the exposure alignment accuracy is approximately ±100nm, and the spacing d1 needs to be at least greater than or equal to the alignment accuracy to ensure that the filling layer 102 and the insulating layer 105 are separated from each other. The spacing d1 cannot be too large because the mask itself has a certain weight, and the edge area of ​​the mask is usually provided with a support structure, while the center area is usually suspended because an opening area needs to be provided. Under the action of its own gravity, the center area of ​​the mask will sag more easily than the edge area, that is, it is closer to the substrate 101, and the closer to the center area, the greater the sag. Therefore, within the range allowed by the design, the smaller the spacing d1, the closer the sagging amount of the mask in the two areas, that is, the closer the distance between the mask and the second filling layer 1022 in the cutting area and the distance from the functional layer 103, and thus the closer the thickness of the first evaporated layer 1041 and the thickness of the second evaporated layer 1042 formed, eliminating the influence of the sagging of the mask on the reliability of the thickness monitoring of the second evaporated layer 1042.

[0063] For example, the encapsulation layer 106 fills the gap between the filling layer 102 and the insulating layer 105, and the encapsulation layer 106 contacts both the edge of the filling layer 102 and the edge of the insulating layer 105. By filling the gap with the encapsulation layer 106, on the one hand, it can further ensure that the filling layer 102 and the insulating layer 105 are spaced apart from each other, and on the other hand, it can ensure that the edge sidewalls of the filling layer 102 and the insulating layer 105 are covered by the encapsulation layer 106, thereby preventing encapsulation failure and improving the encapsulation effect.

[0064] In some embodiments, the insulating layer 105 may include at least two stacked layers. By making the insulating layer 105 include several sublayers, the etching difficulty of each sublayer of the insulating layer 105 can be reduced, and the process stability can be increased. The edges of the at least two layers close to the filling layer 102 are at different distances from the filling layer 102, that is, the edges of the at least two layers close to the filling layer 102 are stacked in a step-like manner. For example, as shown in FIG4 , the insulating layer 105 includes a first insulating layer 1051, a second insulating layer 1052, and a third insulating layer 1053. The distance between the edge 1051A of the first insulating layer 1051 close to the filling layer 102 and the filling layer 102 is smaller than the distance between the edge 1052A of the second insulating layer 1052 close to the filling layer 102 and the filling layer 102, and the distance between the edge 1052A of the second insulating layer 1052 close to the filling layer 102 and the filling layer 102 is smaller than the distance between the edge 1053A of the third insulating layer 1053 close to the filling layer 102 and the filling layer 102. The edges of the first insulating layer 1051 , the second insulating layer 1052 , and the third insulating layer 1053 are stacked in a step-like manner, which can increase the contact area between the encapsulation layer 106 and each insulating layer, thereby facilitating better encapsulation of the edges of each insulating layer by the encapsulation layer 106 .

[0065] As shown in Figure 4, the first filling layer 1021 includes opposing first and second edges 1021A and 1021B, and the second filling layer 1022 includes opposing third and fourth edges 1022A and 1022B. The first edge 1021A is closer to the non-slice zone than the second edge 1021B, and the third edge 1022A is closer to the non-slice zone than the fourth edge 1022B. The orthographic projection of the third edge 1022A on the substrate 101 falls within the orthographic projection of the first edge 1021A on the substrate 101. This ensures that the material of the second filling layer 1022 does not slide into the deep region of the encapsulation layer, thereby preventing it from affecting the encapsulation effect of the encapsulation layer 106. By way of example, the distance d2 between the orthographic projection of the third edge 1022A on the substrate 101 and the orthographic projection of the first edge 1021A on the substrate 101 can be greater than or equal to 200 nm. In some examples, the orthographic projection of the second filling layer 1022 on the substrate 101 may fall within the orthographic projection of the first filling layer 1021 on the substrate 101 .

[0066] Figure 6 is an enlarged schematic diagram of the first evaporated layer 1041 shown in Figure 4. As shown in Figure 6, the first evaporated layer 1041 includes a main portion 1041A, a first shaded portion 1041B, and a second shaded portion 1041C. The first shaded portion 1041B and the second shaded portion 1041C are adjacent to each other and located between the main portion 1041A and the second shaded portion 1041C. The thickness T2 of the first shaded portion 1041B and the thickness T3 of the second shaded portion 1041C are both less than the thickness T1 of the main portion 1041A.

[0067] FIG7 is a schematic diagram showing the principle of the evaporation shadow formed when the evaporation layer 104 is prepared using a mask. As an example, FIG7 only shows the first evaporation layer 1041. It can be understood that the second evaporation layer 1042 also has a similar evaporation shadow.

[0068] As shown in FIG7 , the organic material to be formed into the evaporated layer 104 is stored in the evaporation source 117. The mask 116 includes a shielding portion 1161 and an opening area 1162. After being heated at a high temperature, the organic material forms gaseous molecules, which diffuse along a preset propagation path and are deposited on the substrate 115 through the opening area 1162 of the mask 116, thereby forming the first evaporated layer 1041 in the TEG area of ​​the substrate 115. During the evaporation process, due to the presence of a certain gap between the substrate 115 and the mask 116, the sublimated organic material molecules will not only form an evaporated layer at the position corresponding to the opening area 1162 of the mask 116, but will also inevitably form an evaporation shadow in the vicinity of the opening area 1162. The evaporation shadow can be understood as the thickness of the evaporated layer at this location is less than its thickness in the main part. Specifically, Figure 7 shows an enlarged planar schematic diagram of the first evaporated layer 1041 above the substrate 115. As shown in Figure 7, since there is a certain gap between the substrate 115 and the mask plate 116, the first evaporated layer 1041 formed on the substrate 115 includes a main body 1041A, a first shadow portion 1041B and a second shadow portion 1041C, wherein the first orthographic projection of the main body 1041A on the substrate 115 falls within the second orthographic projection of the opening area 1162 on the substrate 115, but occupies most of the area of ​​the second orthographic projection; the first shadow portion 1041B surrounds the periphery of the main body 1041A, and its position corresponds to a small area within the range of the opening area 1162, which can also be called the inner shadow of evaporation; the second shadow portion 1041C surrounds the periphery of the first shadow portion 1041B, and its position corresponds to a small area outside the range of the opening area 1162, which can also be called the outer shadow of evaporation. Due to the evaporation shadow effect, the thickness T2 of the first shadow portion 1041B and the thickness T3 of the second shadow portion 1041C are generally smaller than the thickness T1 of the main body portion 1041A.

[0069] The area of ​​the orthographic projection of the main portion 1041A of the first evaporated layer 1041 on the substrate 101 is larger (typically much larger) than the sum of the areas of the orthographic projections of the first shadow portion 1041B and the second shadow portion 1041C on the substrate 101. As a result, the thickness of the first evaporated layer 1041 detected by the testing instrument is likely the thickness of the main portion 1041A rather than the thickness of the first shadow portion 1041B and / or the second shadow portion 1041C, thereby preventing the thickness of the first shadow portion 1041B and / or the second shadow portion 1041C from interfering with the thickness monitoring of the second evaporated layer 1042.

[0070] With reference to Figures 4 and 6, in some embodiments, the distance d3 between the orthographic projection of the boundary between the first shadow portion 1041B and the second shadow portion 1041C on the substrate 101 and the orthographic projection of the first edge 1021A of the first filling layer 1021 on the substrate 101 is greater than or equal to the length L3 of the second shadow portion 1041C in the first direction D1. By ensuring that d3 ≥ L3, the first evaporated layer 1041, particularly the second shadow portion 1041C of the first evaporated layer 1041, is prevented from sliding into the deep-seated area of ​​the encapsulation layer, thereby preventing the encapsulation effect of the encapsulation layer 106 in the deep-seated area of ​​the encapsulation layer. In one example, if the length L3 of the second shadow portion 1041C in the first direction D1 is 150 μm, then d3 ≥ 150 μm.

[0071] Continuing with reference to FIG4 and FIG6 , the main portion 1041A of the first evaporated layer 1041 includes a fifth edge 1041D. The fifth edge 1041D is substantially aligned with the fourth edge 1022B of the second filling layer 1022 in the thickness direction of the substrate 101. The distance from the fifth edge 1041D to the boundary between the first shadow portion 1041B and the second shadow portion 1041C is d4. In some embodiments, d4 satisfies the inequality Where a is the length of the sampling area of ​​the first evaporated layer 1041 in the first direction D1, b is the length L2 of the first shadow portion 1041B in the first direction D1, c is the cutting wheel width, and e is the cutting accuracy. The sampling area is a local area of ​​the main body 1041A of the first evaporated layer 1041. The length of the sampling area in the first direction D1 is generally less than the length L1 of the main body 1041A in the first direction D1. By designing the value of d4, it is possible to ensure that the length of the sampling area of ​​the first evaporated layer 1041 meets the test requirements of the test instrument. In one example, a is approximately 200μm, b is approximately 150μm, c is approximately 70μm, and e is approximately 15μm, then d4 ≥ 200μm.

[0072] The width of the first evaporated layer 1041 in the second direction D2 is W1. The width of the sampling area of ​​the first evaporated layer 1041 in the second direction D2 is W2. The width of the first shadow portion 1041B of the first evaporated layer 1041 in the second direction D2 is W3. The second direction D2 is coplanar with and perpendicular to the first direction D1. As shown in the figure, the second direction D2 is perpendicular to the paper. In some embodiments, W1, W2, and W3 satisfy W1 ≥ W2 + 2 × W3, thereby ensuring that the width of the sampling area of ​​the first evaporated layer 1041 meets the testing requirements of the test instrument. The sampling area is a localized area of ​​the main body 1041A of the first evaporated layer 1041. The width W2 of the sampling area in the second direction D2 is typically less than the width of the main body 1041A in the second direction D2. In one example, W2 is approximately 200 μm and W3 is approximately 150 μm, so W1 ≥ 500 μm.

[0073] The thickness of the second evaporated layer 1042 in the non-strip area is monitored by measuring the thickness of the first evaporated layer 1041 in the TEG area using a testing instrument. The testing instrument can be, for example, a probe. The probe has a certain contact area, and the area of ​​the sampling area of ​​the first evaporated layer 1041 needs to be greater than or equal to the contact area of ​​the probe. For example, the length of the sampling area of ​​the first evaporated layer 1041 can be 200 μm, and the width of the sampling area of ​​the first evaporated layer 1041 can be 200 μm.

[0074] In the array substrate 100 described above, the evaporated layer 104 can be any appropriate film layer, and the evaporated layer 104 is formed by an evaporation process using a mask. In one example, the evaporated layer 104 can be an organic light-emitting layer of an OLED device. In this case, the functional layer 103 is the anode of the OLED device.

[0075] As shown in FIG4 , the array substrate 100 may further include a cathode 107 and an encapsulation layer 106. The cathode 107 is located on the side of the second evaporated layer 1042 away from the substrate 101 and is arranged in the non-cutting street area. The cathode 107 provides electrons, and the functional layer (anode) 103 provides holes. The electrons and holes recombine in the second evaporated layer 1042 to make the second evaporated layer 1042 emit light. The encapsulation layer 106 is located on the side of the cathode 107 away from the substrate 101 and is arranged in the cutting street area and the non-cutting street area. The encapsulation layer 106 covers the first evaporated layer 1041 and the cathode 107, and fills the gap between the cathode 107 and the filling layer 102 and the gap between the insulating layer 105 and the filling layer 102 to prevent external moisture and the like from invading the interior of the array substrate 100.

[0076] The array substrate 100 may further include a pixel defining layer 108, which is used to define multiple sub-pixel regions of the array substrate 100. The array substrate 100 may further include an electrode layer 109 and a via 110. The via 110 may be filled with a conductive material, and the functional layer 103 is connected to the electrode layer 109 via the via 110.

[0077] The material of substrate 101 can be various suitable types of materials, including but not limited to organic materials, inorganic materials, flexible materials, rigid materials, etc. For example, substrate 101 can be a silicon substrate. In this case, array substrate 100 is a silicon-based organic light-emitting diode array substrate. Silicon-based organic light-emitting diode array substrates have advantages such as small size and high resolution, and can be widely used in conventional display devices (such as mobile phones, televisions, computers, etc.) and near-eye display devices (such as virtual reality (VR) and augmented reality (AR)).

[0078] Figure 8 shows a schematic cross-sectional view of a partial structure of an array substrate 200. Array substrate 200 has substantially the same structure as array substrate 100, and therefore, identical reference numerals are used to designate identical components. Therefore, the detailed roles and functions of components in Figure 8 with identical reference numerals as those in Figure 4 can be found in the description of Figure 4 and will not be repeated here. For the sake of brevity, only the differences between array substrate 200 and array substrate 100 will be described below.

[0079] In the array substrate 100, the first filling layer 1021 is a single layer. Unlike the array substrate 100, the first filling layer 1021 of the array substrate 200 comprises at least two stacked layers. By making the first filling layer 1021 comprise multiple sublayers, the etching difficulty of each sublayer of the first filling layer 1021 can be reduced, and process stability can be improved. For example, as shown in FIG8 , the first filling layer 1021 comprises a stacked first sublayer 1021-1, a second sublayer 1021-2, and a third sublayer 1021-3.

[0080] In some embodiments, the thickness of the first sub-layer 1021-1 is substantially the same as the thickness of the first insulating layer 1051, the thickness of the second sub-layer 1021-2 is substantially the same as the thickness of the second insulating layer 1052, and the thickness of the third sub-layer 1021-3 is substantially the same as the thickness of the third insulating layer 1053. Furthermore, the thickness of the second filling layer 1022 is substantially the same as the thickness of the functional layer 103. This further ensures that the first distance S1 and the second distance S2 are substantially equal, thereby further ensuring that the thickness of the first evaporated layer 1041 formed in the scribe line area and the thickness of the second evaporated layer 1042 formed in the non-scribe line area are substantially the same. In some embodiments, the difference between the first distance S1 and the second distance S2 is only 8.033 nm, which is essentially negligible. In this way, it can be ensured that the thickness of the first evaporated layer 1041 formed in the cutting street area and the thickness of the second evaporated layer 1042 formed in the non-cutting street area are basically the same, so that the thickness of the second evaporated layer 1042 can be monitored by detecting the thickness of the first evaporated layer 1041, thereby achieving effective monitoring of the thickness of the second evaporated layer 1042.

[0081] In some embodiments, as shown in FIG8 , the edges of the first sub-layer 1021-1, the second sub-layer 1021-2, and the third sub-layer 1021-3 near the non-slice area are at different distances from the non-slice area. That is, the edges of the first sub-layer 1021-1, the second sub-layer 1021-2, and the third sub-layer 1021-3 near the non-slice area are stacked in a step-like manner. This design can increase the contact area between the encapsulation layer 106 and the first sub-layer 1021-1, the second sub-layer 1021-2, and the third sub-layer 1021-3, thereby improving the encapsulation effect.

[0082] For other technical effects of the array substrate 200 , reference can be made to the technical effects of the array substrate 100 . For the sake of brevity, the similarities between the technical effects of the array substrate 200 and the technical effects of the array substrate 100 will not be described again.

[0083] Figure 9 shows a schematic cross-sectional view of a partial structure of an array substrate 300. The array substrate 300 has substantially the same structure as the array substrate 100, and therefore, the same reference numerals are used to designate the same components. Therefore, the detailed functions and effects of the components in Figure 9 with the same reference numerals as those in Figure 4 can be found in the description of Figure 4 and will not be repeated here. For the sake of brevity, only the differences between the array substrate 300 and the array substrate 100 will be discussed below.

[0084] In the array substrate 100, the filling layer 102 includes a first filling layer 1021 and a second filling layer 1022. Unlike the array substrate 100, the filling layer 102 in the array substrate 300 is a single layer. Designing the filling layer 102 as a single layer allows the filling layer 102 to be formed through a single patterning process during the manufacturing process, making the manufacturing process simpler.

[0085] The distance between the surface of the filling layer 102 away from the substrate 101 and the surface of the substrate 101 near the filling layer 102 is a first distance S1, and the distance between the surface of the functional layer 103 away from the substrate 101 and the surface of the substrate 101 near the filling layer 102 is a second distance S2. The first distance S1 and the second distance S2 are substantially equal. In some embodiments, the first distance S1 and the second distance S2 differ by only 8.033 nm, which is essentially negligible. In this way, the thickness of the first evaporated layer 1041 formed in the cutting street area and the thickness of the second evaporated layer 1042 formed in the non-cutting street area can be ensured to be substantially the same, thereby enabling the thickness of the second evaporated layer 1042 to be monitored by detecting the thickness of the first evaporated layer 1041, thereby achieving effective monitoring of the thickness of the second evaporated layer 1042.

[0086] For other technical effects of the array substrate 300 , reference can be made to the technical effects of the array substrate 100 . For the sake of brevity, the similarities between the technical effects of the array substrate 300 and the technical effects of the array substrate 100 will not be described again.

[0087] FIG. 10 shows a display device 400 according to an embodiment of the present disclosure. The display device 400 may include one of the array substrates 100 , 200 , or 300 described above.

[0088] As shown in Figure 10, the display device 400 includes a substrate 101, a cover plate 401 disposed opposite to the substrate 101, and a frame 402 disposed around the AA area. The display device 400 also includes a plurality of bonding electrodes 403 in the non-display area for connecting to devices such as a flexible circuit board.

[0089] The display device 400 may be any suitable type of display device, including but not limited to a mobile phone, a tablet computer, a television, a monitor, a laptop computer, a digital photo frame, a navigator, a near-eye display device such as VR or AR, etc.

[0090] The technical effects of the display device 400 can refer to the technical effects of the array substrate described in the previous embodiments. For the sake of brevity, the technical effects of the display device 400 will not be repeatedly described here.

[0091] It will be understood that although the terms first, second, third, etc. may be used to describe various elements, components, areas, layers and / or parts in this article, these elements, components, areas, layers and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, area, layer or part from another element, component, area, layer or part. Therefore, the first element, component, area, layer or part discussed above can be referred to as the second element, component, area, layer or part without departing from the teachings of the present disclosure.

[0092] Spatially relative terms such as "row," "column," "under," "above," "left," "right," and the like may be used herein to describe the relationship of one element or feature to another element or feature as illustrated in the figures for ease of description. It will be understood that these spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figure is flipped, the element described as "under other elements or features" will be oriented as "above other elements or features." Thus, the exemplary term "under" can encompass both orientations of above and below. The device can be oriented otherwise (rotated 90 degrees or in other orientations) and the spatially relative descriptors used herein are interpreted accordingly. In addition, it will also be understood that when a layer is referred to as "between two layers," it can be the only layer between the two layers, or one or more intermediate layers may also be present.

[0093] The terms used herein are only for the purpose of describing specific embodiments and are not intended to limit the present disclosure. As used herein, the singular forms "one", "an" and "the" are intended to also include the plural forms, unless the context clearly indicates otherwise. It will be further understood that the terms "include" and / or "comprise" when used in this specification specify the presence of the features, wholes, steps, operations, elements and / or parts, but do not exclude the presence of one or more other features, wholes, steps, operations, elements, parts and / or their groups or add one or more other features, wholes, steps, operations, elements, parts and / or their groups. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items. In the description of this specification, the description of the reference terms "one embodiment", "another embodiment" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment are included in at least one embodiment of the present disclosure. In this specification, the schematic representation of the above terms does not necessarily need to be directed to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner. Furthermore, those skilled in the art may combine different embodiments or examples and features of different embodiments or examples described in this specification without mutual contradiction.

[0094] It will be understood that when an element or layer is referred to as being “on,” “connected to,” “coupled to,” or “adjacent to” another element or layer, it can be directly on, directly connected to, directly coupled to, or directly adjacent to another element or layer, or intervening elements or layers may be present. In contrast, when an element is referred to as being “directly on,” “directly connected to,” “directly coupled to,” or “directly adjacent to” another element or layer, no intervening elements or layers are present. However, in no case should “on” or “directly on” be interpreted as requiring that one layer completely cover the underlying layer.

[0095] Embodiments of the present disclosure are described herein with reference to schematic illustrations (and intermediate structures) of idealized embodiments of the present disclosure. Because of this, variations in the illustrated shapes, for example as a result of manufacturing techniques and / or tolerances, should be expected. Therefore, embodiments of the present disclosure should not be interpreted as being limited to the specific shapes of the regions illustrated herein, but should include shape deviations, for example, due to manufacturing. Therefore, the regions illustrated in the figures are schematic in nature, and their shapes are not intended to illustrate the actual shape of the regions of the device and are not intended to limit the scope of the present disclosure.

[0096] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those skilled in the art to which the present disclosure belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the relevant art and / or the context of this specification, and will not be interpreted in an idealized or overly formal sense unless explicitly defined as such herein.

[0097] The above description is merely a specific embodiment of the present disclosure, but the scope of protection of the present disclosure is not limited thereto. Any changes or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in this disclosure should be included in the scope of protection of the present disclosure. Therefore, the scope of protection of the present disclosure should be based on the scope of protection of the claims.

Claims

1. An array substrate, comprising: A substrate including a cutting track area and a non-cutting track area, wherein the non-cutting track area includes a display area; A filling layer, located on the substrate and in the cutting path area, the filling layer at least comprising a layer different from the film layer in the display area; a functional layer located on the substrate and in the non-slice area; and The vapor deposition layer comprises a first vapor deposition layer and a second vapor deposition layer separated from each other, wherein the first vapor deposition layer is located in the cutting street area, and the second vapor deposition layer is located in the non-cutting street area. Among them, the first evaporated layer is located on the side of the filling layer away from the substrate and contacts the filling layer, the second evaporated layer is located on the side of the functional layer away from the substrate and contacts the functional layer, the distance between the surface of the filling layer away from the substrate and the surface of the substrate close to the filling layer is a first distance, the distance between the surface of the functional layer away from the substrate and the surface of the substrate close to the filling layer is a second distance, and the first distance is substantially equal to the second distance.

2. The array substrate according to claim 1, wherein: The scribe line area includes a test area, the test area is spaced apart from the non-scribe line area, and the filling layer and the first evaporated layer are located in the test area.

3. The array substrate according to claim 1, further comprising an insulating layer, wherein: The insulating layer is located in the non-scribing street area and between the substrate and the functional layer, and the insulating layer is spaced apart from the filling layer.

4. The array substrate according to claim 3, wherein: The spaced area between the insulating layer and the filling layer is filled with a packaging material, and the packaging material is in contact with both the edge of the filling layer and the edge of the insulating layer.

5. The array substrate according to claim 3 or 4, wherein: The distance between the insulating layer and the filling layer is greater than or equal to 200 nm.

6. The array substrate according to any one of claims 3 to 5, wherein: The insulating layer includes at least two stacked layers, and edges of the at least two layers close to the filling layer have different distances from the filling layer.

7. The array substrate according to any one of claims 1 to 6, wherein: The filling layer includes a first filling layer and a second filling layer stacked, the first filling layer is located between the substrate and the first evaporated layer, the second filling layer is located between the first filling layer and the first evaporated layer, and the distance between the surface of the second filling layer away from the substrate and the surface of the substrate close to the first filling layer is the first distance.

8. The array substrate according to claim 7, wherein: The orthographic projection of the first evaporated layer on the substrate falls within the orthographic projection of the second filling layer on the substrate.

9. The array substrate according to claim 7, wherein: The first filling layer includes a first edge and a second edge relative to each other, and the second filling layer includes a third edge and a fourth edge relative to each other, the first edge is closer to the non-cutting area than the second edge, and the third edge is closer to the non-cutting area than the fourth edge, and the orthographic projection of the third edge on the substrate falls within the orthographic projection of the first edge on the substrate.

10. The array substrate according to claim 9, wherein: The first evaporated layer includes a main body, a first shadow portion and a second shadow portion, the first shadow portion and the second shadow portion are adjacent to each other and the first shadow portion is located between the main body and the second shadow portion, and the thickness of the first shadow portion and the second shadow portion are both less than the thickness of the main body.

11. The array substrate according to claim 10, wherein: A distance between an orthographic projection of a boundary line between the first shadow portion and the second shadow portion on the substrate and an orthographic projection of a first edge of the first filling layer on the substrate is greater than or equal to a length of the second shadow portion in the first direction.

12. The array substrate according to claim 10, wherein: The main body of the first evaporated layer includes a fifth edge, the fifth edge is substantially aligned with the fourth edge of the second filling layer, and the distance from the fifth edge to the boundary line between the first shadow portion and the second shadow portion is d4, and d4 satisfies the following inequality: Among them, a is the length of the sampling area of ​​the first vapor-deposited layer in the first direction, b is the length of the first shadow part in the first direction, c is the width of the cutting wheel, and e is the cutting accuracy.

13. The array substrate according to claim 11 or 12, wherein: W1≥W2+2×W3, Wherein, W1 is the width of the first vapor-deposited layer in the second direction, W2 is the width of the sampling area of ​​the first vapor-deposited layer in the second direction, W3 is the width of the first shadow portion in the second direction, and the second direction and the first direction are located in the same plane. within and perpendicular to the first direction.

14. The array substrate according to any one of claims 10 to 13, wherein: An area of ​​an orthographic projection of a main body of the first evaporated layer on the substrate is larger than a sum of areas of orthographic projections of the first shadow portion and the second shadow portion on the substrate.

15. The array substrate according to any one of claims 7 to 14, wherein: The first filling layer includes at least two stacked layers, and edges of the at least two layers close to the non-cutting street area have different distances from the non-cutting street area.

16. The array substrate according to any one of claims 7 to 15, wherein: The thickness of the first filling layer is greater than the thickness of the second filling layer.

17. The array substrate according to any one of claims 7 to 16, wherein: The material of the first filling layer is an organic material, and the material of the second filling layer is an inorganic material.

18. The array substrate according to any one of claims 1 to 6, wherein: The filling layer is a single layer.

19. The array substrate according to any one of claims 1 to 18, wherein: The orthographic projection of the first evaporated layer on the substrate is in the shape of a square, a rectangle, a circle or a polygon.

20. The array substrate according to any one of claims 1 to 19, wherein: The evaporated layer is an organic light-emitting layer, and the functional layer is an anode of an organic light-emitting diode device.

21. The array substrate according to claim 20, further comprising: a cathode, located at a side of the second evaporated layer away from the substrate and arranged in the non-cutting street area; as well as The encapsulation layer is located on a side of the cathode away from the substrate and is arranged in the scribe line area and the non-scribe line area, and fills a spaced area between the cathode and the filling layer.

22. A display device comprising the array substrate according to any one of claims 1-21.

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