Temperature sensing and computing device and array based on tao x electronic memristor

Abstract

A temperature sensing and computing device and array based on a TaOx electronic memristor, which belong to the field of micro-nano electronic devices. The temperature sensing and computing device comprises a first metal layer, a functional layer and a second metal layer which are sequentially stacked from bottom to top, wherein a work function of a metal material in the first metal layer is higher than a work function of a metal material in the second metal layer; the functional layer is made of a TaOx material; and the first metal layer is grounded, a positive voltage and a negative voltage are applied to the second metal layer, an output current when the negative voltage is applied to the second metal layer being greater than an output current when the positive voltage with the same magnitude is applied to the second metal layer, thus achieving a self-rectification effect; and when the voltages with the same magnitude are applied to the second metal layer, the output current increasing with the rise of temperature. The device and the array have simpler structures and higher integration levels, are more easily implemented in industry and applied in small-size sensing systems, and can effectively ameliorate the problems, such as high power consumption and high latency, that are caused by redundant data transmission.

Description

A TaO-based x Temperature sensing computing device and array of electronic memristor

Technical field

[0001] The present invention belongs to the field of micro-nanoelectronic devices, and more specifically, relates to a TaO-based x Temperature-sensing computing devices and arrays of electronic memristors. [Background Technology]

[0002] In recent years, with the rapid development of the Internet of Things (IoT), more and more objects are being embedded with sensors. Edge computing has become increasingly important, and more and more information from various sensors needs to be processed. In traditional architectures, sensors and processing units are separate. The data perceived by sensors often needs to be converted into digital signals through an analog-to-digital converter, and then sent to the processing unit through a storage unit. A large amount of redundant data will be involved in the data transmission process, often resulting in high power consumption, high latency, and additional hardware costs. Inspired by biological neural perception systems, the integrated sensing and computing solution was proposed to solve this problem. It can perform calculations directly within the perception end. Sensors can perform information processing simultaneously with signal conversion, without the involvement of an analog-to-digital converter, which can reduce the transmission of redundant data.

[0003] Temperature is an important physical information and one of the key physical quantities sensed in biomimetic neural networks. However, currently used temperature sensing units are typically composed of multiple electronic components, such as resistors, capacitors, and threshold-shift devices. The temperature sensing devices are separated from the information processing unit. As a result, the resulting temperature sensing array and circuit structure are complex, the manufacturing process is complex, and miniaturization and integration are difficult to achieve. Furthermore, the complex array structure results in high power consumption, slow speed, and high latency required to implement the sensing function.

[0004] Therefore, exploring a highly integrated temperature sensing and computing solution is crucial to the development of the Internet of Things and subsequent bionic artificial neural networks. It can further reduce the size of the sensor end and improve problems such as complex array and circuit structure, low integration, high power consumption and high latency caused by the separation of sensing and computing.

[0005] [Summary of the invention]

[0006] In view of the defects of the prior art, the present invention aims to provide a TaO-based x The electronic memristor temperature sensing and computing device and array are designed to solve the problems of complex array and circuit structure, low integration, high power consumption, and high latency caused by the separation of sensing and computing in existing artificial temperature sensing systems.

[0007] To achieve the above object, the present invention provides a TaO-based xThe electronic memristor temperature sensing computing device includes a first metal layer, a functional layer, and a second metal layer stacked in sequence from bottom to top;

[0008] The work function of the metal material in the first metal layer is higher than that of the metal material in the second metal layer; the functional layer is TaO x Material;

[0009] The first metal layer and the second metal layer serve as electrodes. When the first metal layer is used for grounding and the second metal layer is used for applying positive and negative voltages, the output current when a negative voltage is applied to the second metal layer is greater than the output current when a positive voltage of the same magnitude is applied to the second metal layer, and the layer has a self-rectification effect. When a voltage of the same magnitude is applied to the second metal layer, the output current increases with increasing temperature.

[0010] Further preferably, the material of the first metal layer is one of Pt, Pd, Au, Ni and ITO; the material of the second metal layer is one of Ti, W, Ag, Cu, Al, Ta, Hf, TaN, TiN and TiW.

[0011] More preferably, the thickness of the first metal layer is 5 nm to 2 μm, the thickness of the functional layer is 2 nm to 500 nm, and the thickness of the second metal layer is 5 nm to 2 μm.

[0012] On the other hand, the present invention provides a TaO-based x The temperature sensing array of electronic memristor comprises: m non-intersecting first metal layers with gaps, a functional layer and n non-intersecting second metal layers with gaps; the functional layer is TaO x material; the first metal layer and the second metal layer are arranged crosswise and do not intersect; the work function of the metal material in the first metal layer is higher than the work function of the metal material in the second metal layer;

[0013] Among them, m≥1, n≥1, there are m×n temperature sensing devices in the array.

[0014] Further preferably, the size of the functional layer is adapted to the size of the overlapping portion of the first metal layer and the second metal layer.

[0015] Further preferably, the material of the first metal layer is one of Pt, Pd, Au, Ni and ITO; the material of the second metal layer is one of Ti, W, Ag, Cu, Al, Ta, Hf, TaN, TiN and TiW.

[0016] More preferably, the thickness of the first metal layer is 5 nm to 2 μm, the thickness of the functional layer is 2 nm to 500 nm, and the thickness of the second metal layer is 5 nm to 2 μm.

[0017] In general, the above technical solutions conceived by the present invention have the following beneficial effects compared with the prior art:

[0018] The present invention provides a TaO-based x A temperature-sensing computing device and array of an electronic memristor. In this device, the work function of the metal material in the first metal layer is higher than the work function of the metal material in the second metal layer, so that the device has a self-rectifying characteristic and can be used to construct a cross array without the need for a gating device. The device and array structure are simpler, the integration is higher, and it is easier to industrialize and apply in small-size sensing systems.

[0019] The present invention provides a TaO-based x The temperature sensing computing device and array of electronic memristor, wherein when the same negative voltage is applied to the second metal layer, the output current of the device can increase with the increase of temperature. x Electronic memristive devices can simultaneously perform temperature sensing and calculation functions. An array composed of multiple devices can complete more complex calculation and application functions, and can achieve highly integrated temperature sensing and calculation functions without the need for redundant temperature sensors and data transmission circuits. It can effectively improve problems such as high power consumption and high latency caused by redundant data transmission processes.

Brief Description of the Drawings

[0020] FIG1 is a TaO-based x Schematic diagram of the structure of the temperature sensing device of the electronic memristor;

[0021] FIG2 is a Pt / TaO x / IV curves of the Ti temperature sensing device obtained by continuous voltage sweep at different temperatures, at 313K, 323K, 333K, 343K, 353K and 363K respectively;

[0022] FIG3 is a Pt / TaO x / IV curves of the Ti temperature sensing device obtained by continuous voltage sweep at different temperatures, at 303K, 305K, 307K, 309K, 311K, 313K, 315K and 317K;

[0023] FIG4 is a Pt / TaO x Response diagram of the Ti temperature sensing device under ten consecutive pulses at different temperatures. The amplitude of the applied pulses is -4V, the frequency is 3.33Hz, and the temperatures are 303K, 305K, 307K, 309K, 311K, 313K, 315K, and 317K respectively.

[0024] FIG5 is a TaO-based xSchematic diagram of the structure of the temperature sensing array of electronic memristors;

[0025] FIG6 is a TaO-based x Schematic diagram of the application of electronic memristor temperature sensing array to fingerprint recognition artificial neural network;

[0026] FIG. 7 is a TaO-based x The relationship between the recognition accuracy and training rounds of the electronic memristor temperature sensing array applied to fingerprint recognition;

[0027] In all drawings, the same reference numerals are used to denote the same elements or structures, wherein 1-first metal layer; 2-TaO x Layer; 3- second metal layer. [Specific implementation method]

[0028] For ease of understanding, the English abbreviations and related technical terms involved in the embodiments of this application are explained and described below.

[0029] The present invention provides a TaO-based x The temperature sensing device of the electronic memristor includes a first metal layer, a functional layer and a second metal layer stacked from bottom to top; the functional layer is made of TaO x Material; the work function of the metal material in the first metal layer is higher than the work function of the metal material in the second metal layer;

[0030] Further preferably, the first metal layer and the second metal layer serve as electrodes, and the output current when a negative voltage is applied to the second metal layer is greater than the output current when a positive voltage of the same magnitude is applied to the second metal layer, and the device has a self-rectifying effect;

[0031] Further preferably, when the same voltage is applied, the output current of the device increases with increasing temperature;

[0032] On the other hand, the present invention provides a TaO-based x The temperature sensing computing array composed of electronic memristor temperature sensing computing devices includes: m non-intersecting first metal layers with gaps, a functional layer is provided on the first metal layer, and the functional layer is TaO x The functional layer is provided with n non-intersecting second metal layers with gaps; the first metal layer and the second metal layer are arranged crosswise and non-intersecting; wherein m≥1, n≥1, and there are m×n TaO-based layers in the array. x A temperature-sensing computing device of an electronic memristor; the work function of the metal material in the first metal layer is higher than the work function of the metal material in the second metal layer;

[0033] More specifically, the size of the functional layer is adapted to the size of the overlap between the first metal layer and the second metal layer.

[0034] More specifically, the work function of the first metal layer is greater than the work function of the second metal layer; the material of the first metal layer is one of Pt, Pd, Au, Ni and ITO; the material of the second metal layer is one of Ti, W, Ag, Cu, Al, Ta, Hf, TaN, TiN and TiW;

[0035] More specifically, the thickness of the first metal layer is 5 nm to 2 um, the thickness of the functional layer is 2 nm to 500 nm, and the thickness of the second metal layer is 5 nm to 2 um.

[0036] The embodiments of the present application are described below in conjunction with the drawings in the embodiments of the present application.

[0037] Example 1

[0038] As shown in FIG1 , the embodiment of the present invention provides a TaO-based x The electronic memristor temperature sensing computing device comprises a first metal layer, a functional layer and a second metal layer stacked in sequence from bottom to top;

[0039] In this embodiment, the functional layer is TaO x Thin film, where x = 2.085;

[0040] In this embodiment, the work function of the first metal layer is greater than the work function of the second metal layer, and the material of the first metal layer is Pt; the material of the second metal layer is Ti;

[0041] In this embodiment, the thickness of the first metal layer is 100 nm, the thickness of the functional layer is 40 nm, and the thickness of the second metal layer is 100 nm;

[0042] FIG2 is a Pt / TaO temperature sensing device provided by an embodiment of the present invention. x The IV curves of Pt / TaO / Ti were obtained by continuous voltage scanning at different temperatures, wherein the first electrode was grounded and the second electrode was applied with a positive and negative scanning voltage of 0-8V. The temperatures were 313K, 323K, 333K, 343K, 353K, and 363K respectively. At different temperatures, the memristor unit has self-rectification characteristics, and its current response increases with increasing temperature. It can be concluded that the Pt / TaO / Ti / Ti embodiment of the present invention has a self-rectification characteristic. x / Ti devices can be used to build crossbar arrays due to their self-rectifying characteristics, eliminating the need for additional gating devices and enabling sensing of different temperatures;

[0043] FIG3 is a Pt / TaO temperature sensing device provided by an embodiment of the present invention. xThe IV curves of Pt / TaO / Ti were obtained by continuous voltage scanning at different temperatures, wherein the first electrode was grounded and a negative scanning voltage of 0-4V was applied to the second electrode. The temperatures were 303K, 305K, 307K, 309K, 311K, 313K, 315K, and 317K, respectively. At different temperatures, the current response increased with increasing temperature, and the difference between different temperatures was large. It can be concluded that the Pt / TaO / Ti in the embodiment of the present invention x / Ti devices can achieve sensitive temperature perception and can correctly identify temperature differences greater than or equal to 2K.

[0044] FIG4 is a temperature sensing device Pt / TaO provided by an embodiment of the present invention x The response diagram of ten consecutive pulses of Pt / TaO at different temperatures is shown in the figure. The amplitude of the applied pulse is -4V, the frequency is 3.33Hz, and the temperatures are 303K, 305K, 307K, 309K, 311K, 313K, 315K, and 317K respectively. The current response of the device increases with increasing temperature, and the difference between different temperatures is large. It can be concluded that the current response of Pt / TaO in the embodiment of the present invention is x The / Ti device can also achieve sensitive temperature perception when a pulse is applied, and can correctly identify temperature differences greater than or equal to 2K.

[0045] Based on the above electrical measurements, we can find that: (1) The temperature sensing device Pt / TaO x / Ti has a large current response difference when the forward and reverse voltages are the same, and has self-rectification characteristics. It is suitable for cross arrays and does not require the participation of gating devices. The device size is smaller and the preparation process steps are fewer. (2) Whether in DC testing or pulse testing, the current response of the device increases with the increase of temperature, which can achieve sensitive temperature perception and can identify temperature differences greater than or equal to 2K.

[0046] Example 2

[0047] The embodiment of the present invention provides a TaO-based x The temperature sensing computing array of the electronic memristor, the structural diagram of which is shown in FIG5, comprises 300 second metal layers that are parallel to each other and have gaps therebetween, a functional layer is provided on the second metal layer, and 480 first metal layers that are parallel to each other and have gaps therebetween are provided on the functional layer, the first metal layers and the second metal layers are arranged crosswise, and there are 144,000 temperature sensing computing devices in the array;

[0048] In this embodiment, the first metal layer and the second metal layer are arranged vertically;

[0049] In this embodiment, the size of the functional layer is adapted to the size of the overlap between the first metal layer and the second metal layer;

[0050] In this embodiment, the temperature sensing device is the temperature sensing device in Embodiment 1.

[0051] Example 3

[0052] The embodiment of the present invention provides a TaO x The application of electronic memristor temperature sensing array in fingerprint recognition artificial neural network is shown in Figure 6;

[0053] In this embodiment, the temperature sensing array is the array in Example 2;

[0054] In this embodiment, when a finger is placed on the temperature-sensing array, the ridges contact the array, while the valleys do not. The array perceives the former as human body temperature and the latter as room temperature. By sensing the different temperatures, fingerprint information is read. At the same time, the read information is preprocessed through the cross array and Kirchhoff's law, reducing redundant circuit systems and the transmission of redundant data.

[0055] In this embodiment, the pre-processed fingerprint data is passed into a three-layer neural network for fingerprint recognition.

[0056] FIG7 is a TaO-based embodiment provided by the present invention. x The relationship between the recognition accuracy of the temperature-sensing computing array of electronic memristors and the number of training times in fingerprint recognition was studied. After 300 training times, 100% recognition accuracy was achieved, verifying that the array can be used to build a highly integrated temperature-sensing artificial intelligence system.

[0057] In summary, the present invention has the following advantages compared with the prior art:

[0058] The present invention provides a TaO-based x An electronic memristor temperature-sensing computing device and array. In this device, the work function of the metal material in the first metal layer is higher than that of the metal material in the second metal layer, resulting in a self-rectifying characteristic. This allows for the construction of a crossbar array, eliminating the need for a gate device. This results in a simpler device and array structure, higher integration, and greater ease of industrial implementation and application in small-scale sensing systems. Furthermore, when a constant negative voltage is applied to the second metal layer, the device's output current increases with increasing temperature, enabling highly integrated temperature sensing and computing functions. This eliminates the need for redundant temperature sensors and data transmission circuits, effectively alleviating the high power consumption and latency issues associated with redundant data transmission.

[0059] The above description is merely a specific embodiment of the present application, but the scope of protection of the present application is not limited thereto. Any changes or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in this application should be included in the scope of protection of this application. Therefore, the scope of protection of this application should be based on the scope of protection of the claims.

Claims

1. A TaO-based x The temperature sensing computing device of the electronic memristor is characterized by: A first metal layer, a functional layer, and a second metal layer stacked sequentially from bottom to top; The work function of the metal material in the first metal layer is higher than the work function of the metal material in the second metal layer; the functional layer is TaO x Material; The first metal layer and the second metal layer act as electrodes. When the first metal layer is used for grounding and the second metal layer is used for applying positive and negative voltages, the output current of the second metal layer when a negative voltage is applied is greater than the output current of the second metal layer when a positive voltage of the same magnitude is applied, and the second metal layer has a self-rectification effect. When a voltage of the same magnitude is applied to the second metal layer, the output current increases with increasing temperature.

2. The temperature sensing device according to claim 1, characterized in that: The material of the first metal layer is one of Pt, Pd, Au, Ni and ITO; the material of the second metal layer is one of Ti, W, Ag, Cu, Al, Ta, Hf, TaN, TiN and TiW.

3. The temperature sensing device according to claims 1 to 2, characterized in that: The thickness of the first metal layer is 5 nm to 2 μm, the thickness of the functional layer is 2 nm to 500 nm, and the thickness of the second metal layer is 5 nm to 2 μm.

4. A TaO based temperature sensing device according to claim 1 x The temperature sensing computing array of electronic memristor is characterized by: include: m non-intersecting first metal layers with gaps, a functional layer and n non-intersecting second metal layers with gaps; the functional layer is TaO x material; the first metal layer and the second metal layer are arranged crosswise and do not intersect each other; the work function of the metal material in the first metal layer is higher than the work function of the metal material in the second metal layer; Among them, m≥1, n≥1, there are m×n temperature sensing devices in the array.

5. The temperature sensing array according to claim 4, characterized in that: The size of the functional layer is adapted to the size of the overlap between the first metal layer and the second metal layer.

6. The temperature sensing array according to claim 4, characterized in that: The material of the first metal layer is one of Pt, Pd, Au, Ni and ITO; the material of the second metal layer is one of Ti, W, Ag, Cu, Al, Ta, Hf, TaN, TiN and TiW.

7. The temperature sensing array according to any one of claims 4 to 6, characterized in that: The thickness of the first metal layer is 5 nm to 2 μm, the thickness of the functional layer is 2 nm to 500 nm, and the thickness of the second metal layer is 5 nm to 2 μm.

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