Organic light emitting device, display device comprising the same

Abstract

The present invention relates to an organic light emitting device, to a display device comprising the same and to a compound.

Description

[0001] Organic light emitting device, display device comprising the same

[0002] The present invention relates to an organic light emitting device and to a display device comprising the organic light emitting device.

[0003] BACKGROUND OF THE INVENTION

[0004] Organic semiconducting devices, such as organic light-emitting diodes OLEDs, which are selfemitting devices, have a wide viewing angle, excellent contrast, quick response, high brightness, excellent operating voltage characteristics, and color reproduction. Atypical OLED comprises an anode, a hole transport layer HTL, an emission layer EML, an electron transport layer ETL, and a cathode, which are sequentially stacked on a substrate. In this regard, the HTL, the EML, and the ETL are thin films formed from organic compounds.

[0005] When a voltage is applied to the anode and the cathode, holes injected from the anode move to the EML, via the HTL, and electrons injected from the cathode move to the EML, via the ETL. The holes and electrons recombine in the EML to generate excitons. When the excitons drop from an excited state to a ground state, light is emitted. The injection and flow of holes and electrons should be balanced, so that an OLED having the above-described structure has excellent efficiency and / or a long lifetime.

[0006] Performance of an organic light emitting diode may be affected by characteristics of the organic semiconductor layer, and among them, may be affected by characteristics of an organic material of the organic semiconductor layer.

[0007] Particularly, development of an organic semiconductor layer being capable of increasing electron mobility and simultaneously increasing electrochemical stability is needed so that the organic semiconducting device, such as an organic light emitting diode, may be applied to a large-size flat panel display.

[0008] It is, therefore, the object of the present invention to provide organic light emitting diodes and compounds for preparing the same overcoming drawbacks of the prior art, in particular providing compounds for use in organic light emitting diodes comprising the same helpful to improve the performance thereof, especially with respect to efficiency.

[0009] DISCLOSURE

[0010] This object is achieved by an organic light emitting device comprising an anode, a cathode, an emission layer, an electron injection layer and a first electron transport layer; wherein

[0011] - the emission layer, the electron injection layer and the first electron transport layer are arranged between the anode and the cathode;

[0012] - the electron injection layer and the first electron transport layer are arranged between the emission layer and the cathode; - the first electron transport layer is arranged between the emission layer and the electron injection layer;

[0013] - the first electron transport layer comprises a compound of Formula (I) and a silicon- containing compound;

[0014] (Ar2)m-(Zk-G)n (I);

[0015] - m and n are independently 1 or 2;

[0016] - k is independently o, 1 or 2;

[0017] - Ar2is independently selected from the group consisting of C2to C42heteroaryl and C6to C60aryl,

[0018] - wherein each Ar2may be substituted with one or two substituents independently selected from the group consisting of C6to C12aryl, C3to C1 1heteroaryl, and C1to C6alkyl, D, C1to C6alkoxy, C3to Ce branched alkyl, C3to Ce cyclic alkyl, C3to Ce branched alkoxy, C3to Ce cyclic alkoxy, partially or perfluorinated C1to C6alkyl, partially or perfluorinated C1to C6alkoxy, partially or perdeuterated C1to C6alkyl, partially or perdeuterated C1to C6alkoxy, halogen, CN or PY(R10)2, wherein Y is selected from O, S or Se, preferably O, and R10is independently selected from C6to C12aryl, C3to C12heteroaryl, C1to C6alkyl, C1to C6alkoxy, partially or perfluorinated C1to C6alkyl, partially or perfluorinated C1to C6alkoxy, partially or perdeuterated C1to C6alkyl, partially or perdeuterated C1to C6alkoxy;

[0019] - wherein each C6to C12aryl substituent on Ar2and each C3to C11heteroaryl substituent on Ar2may be substituted with C1to C4alkyl or halogen;

[0020] - Z is independently selected from C6to C30aryl,

[0021] - wherein each Z may be substituted with one or two substituents independently selected from the group consisting of C6to C12aryl and C1to C6alkyl, D, C1to C6alkoxy, C3to C6branched alkyl, C3to Ce cyclic alkyl, C3to Ce branched alkoxy, C3to Ce cyclic alkoxy, partially or perfluorinated C1to C6alkyl, partially or perfluorinated C1to C6alkoxy, partially or perdeuterated C1to C6alkyl, partially or perdeuterated C1to C6alkoxy, halogen, CN or PY(R10)2, wherein Y is selected from O, S or Se, preferably O, and R10is independently selected from C6to C12aryl, C3to C12heteroaryl, C1to C6alkyl, C1to C6alkoxy, partially or perfluorinated C1to C6alkyl, partially or perfluorinated C1to C6alkoxy, partially or perdeuterated C1to C6alkyl, partially or perdeuterated C1to C6alkoxy;

[0022] -wherein each C6to C12aryl substituent on Z may be substituted with C1to C4alkyl or halogen;

[0023] - G is chosen so that the dipole moment of a compound G-phenyl is ≥ 1 D; - the silicon-containing compound comprises at least two Si-atoms; and

[0024] - the first electron transport layer is free of electrical dopant.

[0025] The object is further achieved by a device comprising the organic light emitting device according to the present invention, wherein the device is a display device or a lighting device.

[0026] First electron transport layer

[0027] The first electron transport layer comprises a compound of Formula (I)

[0028] (Ar2)m-(Zk-G)n (I) and a silicon-containing compound.

[0029] The first electron transport layer may consist of a mixture of the compound of Formula (I) and the silicon-containing compound. Alternatively, the first electron transport layer may consist of a mixture of the compound of Formula (I) and the silicon-containing compound and one or more further compounds, provided that none of the further compounds is an electrical dopant. The first electron transport layer may comprise more than one compound of Formula (I). The first electron transport layer may consist of one compound of formula (I) or a mixture of different compounds of Formula (I) and one silicon-containing compound or a mixture of different silicon-containing compounds.

[0030] The first electron transport layer may comprise the compound of formula (I) in an amount of to vol% or more and 99 vol% or less, 20 vol% or more and 95 vol% or less, 30 vol% or more and 90 vol% or less, 40 vol% or more and 90 vol% or less, or 50 vol% or more and 85 vol% or less, based on the total volume of the first electron transport layer.

[0031] The first electron transport layer may comprise the silicon-containing compound in an amount of 1 vol% or more and 70 vol% or less, 5 vol% or more and 65 vol% or less, 10 vol% or more and 60 vol% or less, or 15 vol% or more and 50 vol% or less, based on the total volume of the first electron transport layer .

[0032] The first electron transport layer may be arranged between the hole blocking layer and the electron injection layer. The first electron transport layer may be arranged in direct contact with the hole blocking layer. The first electron transport layer may be in direct contact with the electron injection layer. The first electron transport layer may be arranged “contacting sandwiched” between the hole blocking layer and the electron injection layer.

[0033] The first electron transport layer may have a thickness of < too nm, optionally between 10 and 90 nm, optionally between 10 and 6onm, optionally between 10 and 50 nm.

[0034] Compound of formula (I) In the compound of Formula (I), the group “Z” is a spacer moiety connecting (if present, that is in case that k > 1) the groups Ar2and G. In case that the compound of Formula (I) comprises more than one groups (Zk-G) the groups may or may not independently comprise the spacer Z.

[0035] In Formula (I), m and n are independently 1 or 2. In Formula (I), m and n maybe 1.

[0036] In Formula (I), k is independently o, 1 or 2. In Formula (I), k maybe independently 1 or 2.

[0037] Ar2may be independently selected from the group consisting of C2to C39heteroaryl and C6to C54aryl, optionally C2to C36 heteroaryl and C6to C48 aryl, optionally C3to C30heteroaryl and C6to C42aryl, optionally C3to C27heteroaryl and C6to C36 aryl, optionally C3to C24heteroaryl and C6to C30aryl, and optionally C3to C21heteroaryl and C6to C24aryl.

[0038] Ar2may be independently selected from the group consisting of C2to C39N-containing heteroaryl and C6to C54aryl, optionally C2to C36 N-containing heteroaryl and C6to C48 aryl, optionally C3to C30N-containing heteroaryl and C6to C42aryl, optionally C3to C27N-containing heteroaryl and C6to C36 aryl, optionally C3to C24N-containing heteroaryl and C6to C30aryl, and optionally C3to C21N-containing heteroaryl and C6to C24aryl. In this regard, it may be provided that a respective N-containing heteroaryl comprises one or more N-atoms as the only heteroatom(s).

[0039] Ar2may comprise at least two annelated 5- or 6-membered rings.

[0040] Ar2may be independently selected from the group consisting of pyridinyl, triazinyl, 1,2- diazinyl, 1,3-diazinyl, 1,4-diazinyl, quinazolinyl, benzoquinazolinyl, benzimidazolyl, quinolinyl, benzoquinolinyl benzoacridinyl, dibenzoacridinyl, fluoranthenyl, anthracenyl, naphthyl, triphenylenyl, phenathrolinyl, and dinaphthofuranyl which may be substituted or unsubstituted, respectively.

[0041] Ar2maybe independently selected from the group consisting of dibenzoacridinyl, 1,3-diazinyl, 1,4-diazinyl, anthracenyl, triazinyl, phenathrolinyl, triphenylenyl, pyridinyl, dinaphthofuranyl.

[0042] Ar2may be selected from or comprise independently one of the following groups

[0043] wherein the asterisk symbol represents the binding position for binding to Z in formula (I), respectively. In case that Ar2is substituted, each substituent on Ar2maybe independently selected from the group consisting of phenyl, naphthyl, optionally -naphthyl, pyridinyl and biphenyl-yl which maybe substituted or unsubstituted, respectively.

[0044] In case that Ar2is substituted, each substituent on Ar2maybe independently selected from the group consisting of phenyl, pyridinyl and biphenyl-yl, optionally para-biphenyl-yl. Z may be independently selected from C6to C24aryl, alternatively C6to C18aryl, alternatively C6to C12 aryl, which may be substituted or unsubstituted.

[0045] Z may be selected from the group consisting of phenylene, naphthylene, phenylenenaphthylene, biphenylene and terphenylene which may be substituted or unsubstituted, respectively. Z may be selected independently from one of the following groups wherein the binding positions for binding to Ar2and G can be freely selected.

[0046] In case that Z is substituted, each substituent on Z may be independently selected from the group consisting of phenyl and C1to C4alkyl.

[0047] G is chosen so that the dipole moment, computed by the TURBOMOLE V6.5 program package using hybrid functional B3LYP and Gaussian 6-31G* basis set, of a compound G-phenyl is > 1 D and ≤ 7 D. The unit for the dipole moment “Debye” is abbreviated with the symbol “D”. The inventors have found that it is advantageous if the compound of Formula (I) comprises a group having a certain polarity, that is a specific dipole moment within the above range or the ranges mentioned below. It was further found that it is still advantageous that the compound of Formula (I) comprises such a polar group (first polar group) if the compound of Formula (I) comprises, in addition, a further polar group (second polar group) which is suitable to balance the dipole moment of the first polar group in a way that the total dipole moment of the compound of Formula (I) is low, for example, in case that the compound is a symmetrical molecule comprising a first polar group and a second polar group which are the same, the dipole moment could be o Debye. Therefore, the compound of Formula (I) cannot be characterized be referring to the total dipole moment of the compound. As a consequence, reference is made instead to an artificial compound comprising the polar group “G” and an unpolar group “phenyl”. In this regards, the dipole moment |M| of a compound containing N atoms is given by: where qtand rtare the partial charge and position of atom i in the molecule. The dipole moment is determined by a semi-empirical molecular orbital method. The geometries of the molecular structures are optimized using the hybrid functional B3LYP with the 6-31G* basis set in the gas phase as implemented in the program package TURBOMOLE V6.5 (TURBOMOLE GmbH, Litzenhardtstrasse 19, 76135 Karlsruhe, Germany). If more than one conformation is viable, the conformation with the lowest total energy is selected to determine the bond lengths of the molecules. In this regard, the entire moiety G encompasses all possible substituents which may be comprised. G may be selected so that the dipole moment of a compound G-phenyl is > 1 D; optionally ≥ 2 D; optionally ≥ 2.5 D, optionally ≥ 2.5 D, optionally ≥ 3 D, and optionally ≥ 3.5 D. G may be chosen so that the dipole moment of a compound G-phenyl is ≤ 7 D, optionally ≤ 6.5 D, optionally ≤ 6 D, optionally ≤ 5.5 D, optionally ≤ 5 D. If more than one conformational isomer of the compound G-phenyl is viable then the average value of the dipole moments of the conformational isomers of G-phenyl is selected to be in this range. Conformational isomerism is a form of stereoisomerism in which the isomers can be interconverted just by rotations about formally single bonds.

[0048] By selecting the G such that the dipole moment of a compound G-phenyl lies in the above range it is provided that the electron injection from the adjacent, distinct electron injection layer (EIL) is improved and voltage of the OLED device is decreased and the cd / A efficiency of the OLED device is increased.

[0049] Exemplary compounds “G-phenyl” are listed in the following Table 1, wherein the moiety in the respective compound specifies the “phenyl” part in “G-phenyl”

[0050] Table 1:

[0051]

[0052]

[0053]

[0054] G may be selected from the group consisting of dialkylphosphine oxide (-P(=0)alkyl2), diarylphosphine oxide (-P(=0)aryl2), alkylarylphosphine oxide (-P(=0)alkyl2), diheteroarylphosphine oxide (-P(=O)heteroaryl2), arylheteroarylphosphine oxide (- P(=O)aryl,heteroaryl, cyclic diarylphosphinyl, phosphine oxide, aryl-containing phosphine oxide, heteroaryl-containing phosphine oxide, cyclic arylheteroarylphosphinyl, cyclic heteroaryl-containing phosphine oxide, nitrile, benzonitrile, nicotinonitrile, amide, carbamide, and C2to C42heteroaryl; wherein G may include one or more substituents attached to the group, wherein the one or more substituents are selected from the group consisting of C6to C18aryl, C1to C10alkyl, C2to C14heteroaryl. In this regard, “cyclic means that the “P=O” of the phosphine oxide, respectively the phosphine oxide is part of a ring formed with further moieties of the group.

[0055] G may be selected from the group consisting of di-C1to C10-alkylphosphine oxide, di -C6to C10- arylphosphine oxide, C10-C42diheteroarylphosphine oxide, C7-C42arylheteroarylphosphine oxide, C8-C42phosphine oxide, C8-C42aryl-containing phosphine oxide, C8-C63heteroaryl- containing phosphine oxide, C12-C63cyclic arylphosphine oxide, C7-C42cyclic arylheteroarylphosphine oxide, C7-C42cyclic heteroaryl-containing phosphine oxide, and C2to C39heteroaryl, optionally C2to C35heteroaryl, optionally C2to C32heteroaryl, optionally C2to C29heteroaryl, optionally C2to C25heteroaryl; G may include one or more substituents attached to the group, wherein the one or more substituents are selected from the group consisting of C6to C12aryl, C1to C6alkyl, C2to C11h eteroaryl.

[0056] G may be selected from the group consisting of di-C1to C4-alkylphosphine oxide, cl i-Ce to C1o- arylphosphine oxide, Cio diheteroarylphosphine oxide, C7-C25arylheteroarylphosphine oxide, C8-C42phosphine oxide, C8-C42aryl-containing phosphine oxide, C8-C24heteroaryl-containing phosphine oxide, Ci2-C42cyclic arylphosphine oxide, C7-C25cyclic arylheteroarylphosphine oxide, C7-C25cyclic heteroaryl-containing phosphine oxide, and C2to C25heteroaryl; wherein the respective G may include one or more substituents attached to the group, wherein the one or more substituents are selected from the group consisting of C6to C1o aryl, C1to C4alkyl, C2to C5heteroaryl.

[0057] G is selected from the group consisting of dialkylphosphine oxide, diarylphosphine oxide, alkylarylphosphine oxide, diheteroarylphosphine oxide, arylheteroarylphosphine oxide, cyclic diarylphosphinoxide, phosphine oxide, aryl-containing phosphine oxide, heteroaryl- containing phosphine oxide, cyclic arylheteroarylphosphinoxide, cyclic heteroaryl-containing phosphine oxide, nitrile, benzonitrile, nicotinonitrile, amide-yl, carbamide-yl and C2to C1 7heteroaryl; wherein the respective G may include one or more substituents attached to the group, wherein the one or more substituents are selected from the group consisting of phenyl, methyl, ethyl, and pyridyl.

[0058] G may be selected independently from the group consisting of dimethylphosphine oxide, diphenylphosphine oxide, nitrile, benzonitrile, nicotinonitrile, di-hydro-benzoimidazolone-yl, diphenyl-propane-yl, N,N-dimethylacetamid, amide, carbamide, imidazolyl, phenylbenzoimidazolyl, ethylbenzoimidazolyl phenylbenzoquinolinyl, phenylbenzoimidazoquinolinyl, pyridinyl, bipyridinyl, picolinyl, lutidenyl, pyridazinyl, pyrimidinyl, pyrazinyl, triphenyl-pyrazinyl, benzoquinolinyl, phenanthrolinyl, phenylphenanthrolinyl, quinazolinyl, benzoxazolyl, benzimidazolyl, pyridinyl- imidazopyridinyl;

[0059]

[0060]

[0061] wherein the asterisk symbol represents the binding position to Z in formula (I) and in formulas where no is shown, the binding position can be freely chosen.

[0062] G may be selected independently from the group consisting of dimethylphosphine oxide, diphenylphosphine oxide, 2-phenyl-iH-benzo[d]imidazolyl, 2-ethyl-iH-benzo[d]imidazolyl, 2-phenylbenzo[h]quinolinyl, pyridinyl, 2,2’-bipyridinyl, 5-phenylbenzo[4,5]imidazo[i,2- a]quinolinyl, 9-phenyl-i,io-phenanthrolinyl, 2-quinazolinyl, 4-quinazolinyl, 4-phenyl-2- quinazolinyl and (pyridine-2-yl)imidazo[i,5-a]pyridinyl;

[0063]

[0064] wherein the asterisk symbol represents the binding position to Z in formula (I).

[0065] In one embodiment, in Formula (I), Ar2is C3to C21heteroaryl; Z is C6to C12aryl; G is C2to C42heteroaryl; m is 1; k is 1; and n is 1.

[0066] In one embodiment, in Formula (I), Ar2is C3to C21N-containing heteroaryl; Z is phenylene; G is C2to C25heteroaryl; m is 1; k is 1; and n is 1.

[0067] In one embodiment, in Formula (I), Ar2is triazinyl substituted with phenyl and / or phenyl substituted with pyridinyl, preferably meta-phenylene-3-pyridinyl as in formula B-27; Z is phenylene; G is C2to C25heteroaryl; m is 1; k is 1; and n is 1.

[0068] In one embodiment, in Formula (I), Ar2is C3to C21N-containing heteroaryl; Z is metaphenylene; G is C2to C25heteroaryl; m is 1; k is 1; and n is 1.

[0069] In one embodiment, in Formula (I), Ar2is C3to C21N-containing heteroaryl; Z is phenylene; G is triphenyl-pyrazinyl; m is 1; k is 1; and n is 1.

[0070] In one embodiment, in Formula (I), Ar2is triazinyl substituted with phenyl and / or phenyl substituted with pyridinyl, preferably meta-phenylene-3-pyridinyl as in formula B-27; Z is phenylene; G is triphenyl-pyrazinyl; m is 1; k is 1; and n is 1.

[0071] The compound of Formula (I) maybe selected from the compounds B-i to B-28 of the following Table 2.

[0072] Table 2:

[0073]

[0074] In an embodiment the LUMO energy level of the compound of formula (I) in the absolute scale taking vacuum energy level as zero, computed by the TURBOMOLE V6.5 program package using hybrid functional B3LYP and Gaussian 6-31G* basis set, is in the range from -2.30 eV to -1.20 eV, preferably from -2.10 eV to -1.28 eV.

[0075] The compound of formula (I) may comprise 8 to 13 aromatic or heteroaromatic rings, optionally 8 to 11 aromatic or heteroaromatic rings, optionally 8 to 10 aromatic or heteroaromatic rings, wherein one or more of the aromatic or heteroaromatic rings may be substituted with C1to C4alkyl. In this regard, an aromatic, respectively heteroaromatic ring is a single aromatic ring, for example a 6-membered aromatic ring such as phenyl, a 6-membered heteroaromatic ring such as pyridyl, a 5-membered heteroaromatic ring such as pyrrolyl etc. In a system of condensed (hetero)aromatic rings, each ring is considered as a single ring in this regard. For example, naphthalene comprises two aromatic rings.

[0076] The compound of formula (I) may comprise at least one heteroaromatic ring, optionally 1 to 5 heteroaromatic rings, optionally 1 to 4 heteroaromatic rings, optionally 1 to 3 heteroaromatic rings, and optionally 1 or 2 heteroaromatic rings.

[0077] The aromatic or heteroaromatic rings of the compound of formula (I) may be 6-membered rings.

[0078] The heteroaromatic rings of the compound of formula (I) may be a N-containing heteroaromatic ring, optionally all of the heteroaromatic rings are N-containing heteroaromatic rings, optionally all of the heteroaromatic rings heteroaromatic rings contain N as the only type of heteroatom.

[0079] The compound of formula (I) may comprise at least one 6-membered heteroaromatic ring containing one to three N-atoms in each heteroaromatic ring, optionally one to three 6- membered heteroaromatic rings containing one to three N-atoms in each heteroaromatic ring, respectively.

[0080] The at least one 6-membered heteroaromatic ring comprised in the compound of formula (I) may be an azine. The at least one 6-membered heteroaromatic ring comprised in the compound (I) may be triazine, diazine, pyrazine.

[0081] If the compound (I) comprises two or more heteroaromatic rings, the heteroaromatic rings maybe separated from each other by at least one aromatic ring which is free of a heteroatom.

[0082] In an embodiment the compound of formula (I) comprises one polar group “G”. It may be provided that the compound of Formula (I) does not contain a moiety P=O. It may be provided that the compound of Formula (I) does not contain P(=0)Aryl2. It maybe provided that the compound of Formula (I) does not contain P(=0)Alkyl2. It maybe provided that the compound of Formula (I) does not contain P(=0)Ph2. It maybe provided that the compound of Formula (I) does not contain P(=O)(CH3)2. It may be provided that the compound of Formula (I) does not contain R’P(=O)R” wherein R’ and R” are connected with each other to form a ring, that is, does not contain ring-phosphine oxide. It may be provided that the compound of Formula (I) does not contain R’P(=O)R” wherein R’ and R” are connected with each other to form a 7-membered ring.

[0083] It may be provided that the compound of Formula (I) does not contain two moieties P=O. It maybe provided that wherein the compound of Formula (I) does not contain two P(=O)Aryl2. It may be provided that wherein the compound of Formula (I) does not contain two P(=0)Alkyl2. It may be provided that wherein the compound of Formula (I) does not contain two P(=0)Ph2. It maybe provided that wherein the compound of Formula (I) does not contain two P(=O)(CH3)2. It may be provided that wherein the compound of Formula (I) does not contain CN.

[0084] It maybe provided that one or more of the following formulas are excluded from the scope of the Compound of Formula (I)

[0085]

[0086] In an embodiment the compound of formula (II) is not a compound of formula (I). Silicon-containing compound

[0087] In addition to the compound of formula (I), the first electron transport layer comprises a silicon-containing compound. The silicon-containing compound comprises at least two Si- atoms.

[0088] The silicon-containing compound may be a silsesquioxane, an aryl silane or a mixture of two or more thereof.

[0089] The silicon-containing compound maybe an silsesquioxane

[0090] Silsesquioxanes adopt cage-like or polymeric structures with Si-O-Si linkages and tetrahedral Si vertices.

[0091] The silsesquioxane may have the formula (II) SixRsxO1.5x(II) wherein

[0092] - Rsis independently selected from C1to C30hydorcarbyl, - wherein each C1to C30hydrocarbyl independently may be substituted with one or more halogen, preferably F; and

[0093] - x is selected from 6, 8, to, 12, 14 and 16.

[0094] The one or more halogen may be independently selected from the group consisting of F, Cl, Br and I. The one or more halogen may be each F.

[0095] Rsmay be independently selected from C1to C28hydorcarbyl, C1to C26 hydorcarbyl, C1to C24hydorcarbyl, C1to C22hydorcarbyl, C1to C20hydorcarbyl, C1to C18hydorcarbyl, C1to C16 hydorcarbyl, C1to C1 4hydorcarbyl, C1to C12hydorcarbyl, C1to C10 hydorcarbyl, C1to C8hydorcarbyl, C2to C8hydorcarbyl, C3to C8hydorcarbyl, or C3to C4hydorcarbyl, wherein the respective hydrocarbyl is unsubstituted or substituted with one or more halogen, preferably F.

[0096] Rsmay be independently selected from C1to C28alkyl, C1to C28aryl, C1to C28alkylaryl, or C1to C28arylalkyl, C1to C26alkyl, C1to C26aryl, C1to C26alkylaryl, or C1to C26arylalkyl, C1to C24alkyl, C1to C24aryl, C1to C24alkylaryl, or C1to C24arylalkyl, C1to C22alkyl, C1to C22aryl, C1to C22alkylaryl, or C1to C22arylalkyl, C1to C20alkyl, C1to C20aryl, C1to C20alkylaryl, or C1to C20arylalkyl, C1to C18alkyl, C1to C18aryl, C1to C18alkylaryl, or C1to C18arylalkyl, C1to C16 alkyl, Ci to C16aryl, C1to C16 alkylaryl, or C1to C16 arylalkyl, C1to C14alkyl, C1to C14aryl, C1to C14alkylaryl, or C1to C14arylalkyl, C1to C12alkyl, C1to C12aryl, C1to C12alkylaryl, or C1to C12arylalkyl, C1to C10 alkyl, C1to C10aryl, C1to C10 alkylaryl, or C1to C10 arylalkyl, C1to C8alkyl, C1to C8aryl, C1to C8alkylaryl, or C1to C8arylalkyl, C2to C8alkyl, C2to C8aryl, C2to C8alkylaryl, or C2to C8arylalkyl, C3to C8alkyl, C3to C8aryl, C3to C8alkylaryl, or C3to C8arylalkyl, or C3to C4alkyl, wherein the respective hydrocarbyl is unsubstituted or substituted with one or more halogen, preferably F.

[0097] Rsmay be independently selected from C1to C28alkyl, C1to C26alkyl, C1to C24alkyl, C1to C22alkyl, C1to C20alkyl, C1to C18alkyl, C1to C16 alkyl, C1to C14alkyl, C1to C12alkyl, C1to C10 alkyl, C1to C8alkyl, C2to C8alkyl, C3to C8alkyl, or C3to C4alkyl, wherein the respective hydrocarbyl is unsubstituted or substituted with one or more halogen, preferably F.

[0098] Rsmay be independently selected from the group consisting of n-propyl, iso-butyl, and 2- phenylethyl, wherein the respective group may be substituted with one or more F. It may be provided that all Rsin one silsesquioxane are selected the same.

[0099] Rs(including all substituents) may be independently selected, preferably selected the same, from Rs-1 to Rs-3 wherein represents the binding position to the remaining structure of the silsesquioxane. Rs(including all substituents) may be independently selected, preferably selected the same, from Rs-1 to Rs-3 wherein represents the binding position to the remaining structure of the silsesquioxane. x may be selected from 8, to, and 12. x may be 8 or 12.

[0100] The silsesquioxane have the formula S-1 to S-3

[0101]

[0102] The silsesquioxane may have the formula S-1 or S-2.

[0103] The silicon-containing compound may be an aryl silane, that is, an aryl silane comprising at least two Si-atoms. The silicon-containing compound maybe an aryl silane comprising at two to four Si-atoms. The silicon-containing compound may be an aryl silane comprising at two or three Si-atoms. The silicon-containing compound maybe an aryl silane comprising exactly two Si-atoms.

[0104] In terms of the present disclosure, an aryl silane may be considered as a compound which consists of Si and aryl, preferably of Si and 6-membered aryl rings, only, that is, which preferably does not contain any other constituents, such as other heteroatoms, alkyl groups etc (this doe, however, not exclude substitution with deuterium).

[0105] The aryl silane may have the formula (III), wherein

[0106] ArS1to ArS7are independently selected from C6to C24aryl. ArS1to ArS7are independently selected from C6to C18aryl.

[0107] ArS1to Ars3and Ars5to ArS7may be independently selected from C6to C18aryl, Ce to C12aryl, or C6to C10aryl. ArS1to ArS3and ArS5to ArS7may be each phenyl. ArS4may be C12 to C24aryl, C12to C18aryl, C18to C24aryl or C18aryl. ArS4may be selected from phenyl, biphenyl and terphenyl.

[0108] The aryl silane of formula (III) may comprise 6 to 12 6-membered aryl rings, 7 to 11 6- membered aryl rings, 8 to 10 6-membered aryl rings, or 9 6-membered aryl rings. ArS4may be ArS4-1 wherein “*1* is the binding position to

[0109] ArS3

[0110] ArS2— Si *1

[0111] Ars1and “*2” is the binding position to

[0112] ArS4may be selected from ArS4-2 to ArS4-7 wherein “*1* is the binding position to and “*2” is the binding position to

[0113] The aryl silane may have the formula S-4

[0114] Free of electrical dopant

[0115] The first electron transport layer does not comprise an electrical dopant, that is, is free of an electrical dopant, such as an n-type dopant, especially a redox n-type dopant.

[0116] The term “free of’ in this regard does not exclude impurities. Impurities have no technical effect with respect to the object achieved by the present invention. Impurities are not deliberately added to the layer during processing.

[0117] The term “free of’ a compound means that such compound is not deliberately added to the layer during processing.

[0118] Under electrical dopant, especially n-type dopant it is understood a compound which, if embedded into an electron transport matrix, improves, in comparison with the neat matrix under the same physical conditions, the electron properties of the formed organic material, particularly in terms of electron injection and / or electron conductivity.

[0119] In the context of the present invention “embedded into an electron transport matrix” means homogenously mixed with the electron transport matrix.

[0120] The electrical dopant as referred to herein is especially selected from elemental metals, metal salts, metal complexes and organic radicals. In one embodiment, the electrical dopant is selected from alkali metal salts and alkali metal complexes; preferably from lithium salts and lithium organic complexes; more preferably from lithium halides and lithium organic chelates; even more preferably from lithium fluoride, a lithium quinolinolate, lithium borate, lithium phenolate, lithium pyridinolate or from a lithium complex with a Schiff base ligand; most preferably,

[0121] - the lithium complex has the formula II, III or IV: wherein

[0122] A1to A6are same or independently selected from CH, CR, N, O;

[0123] R is same or independently selected from hydrogen, halogen, alkyl or aryl or heteroaryl with 1 to 20 carbon atoms; and more preferred A1to A6are CH,

[0124] - the borate based organic ligand is a tetra(iH-pyrazol-i-yl)borate,

[0125] - the phenolate is a 2-(pyridin-2-yl)phenolate, a 2-(diphenylphosphoryl)phenolate, an imidazol phenolate, 2-(pyridin-2-yl)phenolate or 2-(i-phenyl-iH-benzo[d]imidazol-2- yl)phenolate,

[0126] - the pyridinolate is a 2-(diphenylphosphoryl)pyridin-3-olate, the lithium Schiff base has the structure too, 101, 102 or 103:

[0127] According to one embodiment of the invention, the first electron transport layer of the present invention is free of a lithium organic complex, alternatively 8-hydroxyquinolinolato-lithium (= LiQ). According to one embodiment of the present invention the first electron transport layer is free of a metal, preferably selected from alkali metals, alkaline earth metals, rare earth metals and metals of the first transition period Ti, V, Cr and Mn, especially selected from Li, Na, K, Rb, C8, Mg, Ca, Sr, Ba, Sm, Eu, Tm, Yb; more preferably from Li, Na, K, Rb, C8, Mg and Yb, even more preferably from Li, Na, C8and Yb, most preferably from Li, Na and Yb.

[0128] The most practical benchmark for the strength of an n-dopant is the value of its redox potential. There is no particular limitation in terms how negative the value of the redox potential can be.

[0129] As reduction potentials of usual electron transport matrices used in organic semiconductors are, if measured by cyclic voltammetry against ferrocene / ferrocenium reference redox couple, roughly in the range from about - 0.8 V to about - 3.1V; the practically applicable range of redox potentials for n-type dopants which can effectively n-dope such matrices is in a slightly broader range, from about - 0.5 to about - 3.3 V.

[0130] The measurement of redox potentials is practically performed for a corresponding redox couple consisting of the reduced and of the oxidized form of the same compound.

[0131] In case that the n-type dopant is an electrically neutral metal complex and / or an electrically neutral organic radical, the measurement of its redox potential is actually performed for the redox couple formed by

[0132] (i) the electrically neutral metal complex and its cation radical formed by an abstraction of one electron from the electrically neutral metal complex, or

[0133] (ii) the electrically neutral organic radical and its cation formed by an abstraction of one electron from the electrically neutral organic radical.

[0134] Preferably, the redox potential of the electrically neutral metal complex and / or of the electrically neutral organic radical may have a value which is more negative than - 0.5 V, preferably more negative than - 1.2 V, more preferably more negative than - 1.7 V, even more preferably more negative than - 2.1 V, most preferably more negative than - 2.5 V, if measured by cyclic voltammetry against ferrocene / ferrocenium reference redox couple for a corresponding redox couple consisting of

[0135] (i) the electrically neutral metal complex and its cation radical formed by an abstraction of one electron from the electrically neutral metal complex, or

[0136] (ii) the electrically neutral organic radical and its cation formed by an abstraction of one electron from the electrically neutral organic radical.

[0137] In a preferred embodiment, the redox potential of the n-dopant is between the value which is about 0.5 V more positive and the value which is about 0.5 V more negative than the value of the reduction potential of the chosen electron transport matrix.

[0138] Electrically neutral metal complexes suitable as n-type dopants maybe e.g. strongly reductive complexes of some transition metals in low oxidation state. Particularly strong n-type dopants maybe selected for example from Cr(II), Mo(II) and / or W(II) guanidinate complexes such as W2(hpp)4, as described in more detail in W02005 / 086251.

[0139] Electrically neutral organic radicals suitable as n-type dopants may be e.g. organic radicals created by supply of additional energy from their stable dimers, oligomers or polymers, as described in more detail in EP 1837926 Bi, WO2OO7 / 107306, or WO2OO7 / 107356. Under an elemental metal, it is understood a metal in a state of a neat metal, of a metal alloy, or in a state of free atoms or metal clusters. It is understood that metals deposited by vacuum thermal evaporation from a metallic phase, e.g. from a neat bulk metal, vaporize in their elemental form. It is further understood that if the vaporized elemental metal is deposited together with a covalent matrix, the metal atoms and / or clusters are embedded in the covalent matrix. In other words, it is understood that any metal-doped covalent material prepared by vacuum thermal evaporation contains the metal at least partially in its elemental form.

[0140] For the use in consumer electronics, only metals containing stable nuclides or nuclides having very long halftime of radioactive decay might be applicable. As an acceptable level of nuclear stability, the nuclear stability of natural potassium can be taken.

[0141] In one embodiment, the electrical may be selected from electropositive metals selected from alkali metals, alkaline earth metals, rare earth metals and metals of the first transition period Ti, V, Cr and Mn. Preferably, the n-dopant maybe selected from Li, Na, K, Rb, C8, Mg, Ca, Sr, Ba, Sm, Eu, Tm, Yb; more preferably from Li, Na, K, Rb, C8, Mg and Yb, even more preferably from Li, Na, C8and Yb, most preferably from Li, Na and Yb.

[0142] Specific embodiments

[0143] In one embodiment an organic light emitting device comprising an anode, a cathode, an emission layer, an electron injection layer and a first electron transport layer; wherein

[0144] - the emission layer, the electron injection layer and the first electron transport layer are arranged between the anode and the cathode;

[0145] - the electron injection layer and the first electron transport layer are arranged between the emission layer and the cathode;

[0146] - the first electron transport layer is arranged between the emission layer and the electron injection layer;

[0147] - the first electron transport layer comprises a compound of Formula (I) and a silicon- containing compound;

[0148] (Ar2)m-(Zk-G)n (I);

[0149] - m and n are independently 1 or 2; - k is independently o, 1 or 2;

[0150] - Ar2is independently selected from the group consisting of C2to C42heteroaryl and C6to C60aryl,

[0151] - wherein each Ar2may be substituted with one or two substituents independently selected from the group consisting of C6to C12aryl, C3to C11heteroaryl, and C1to Ce alkyl, D, C1to C6alkoxy, C3to Ce branched alkyl, C3to Ce cyclic alkyl, C3to Ce branched alkoxy, C3to Ce cyclic alkoxy, partially or perfluorinated C1to C6alkyl, partially or perfluorinated C1to C6alkoxy, partially or perdeuterated C1to C6alkyl, partially or perdeuterated C1to C6alkoxy, halogen, CN or PY(R10)2, wherein Y is selected from O, S or Se, preferably O, and R10is independently selected from C6to C12aryl, C3to C12heteroaryl, C1to C6alkyl, C1to C6alkoxy, partially or perfluorinated C1to C6alkyl, partially or perfluorinated C1to C6alkoxy, partially or perdeuterated C1to C6alkyl, partially or perdeuterated C1to C6alkoxy;

[0152] - wherein each C6to C12aryl substituent on Ar2and each C3to C11heteroaryl substituent on Ar2may be substituted with C1to C4alkyl or halogen;

[0153] - Z is independently selected from C6to C30aryl,

[0154] - wherein each Z may be substituted with one or two substituents independently selected from the group consisting of C6to C12aryl and C1to C6alkyl, D, C1to C6alkoxy, C3to C6branched alkyl, C3to Ce cyclic alkyl, C3to Ce branched alkoxy, C3to Ce cyclic alkoxy, partially or perfluorinated C1to C6alkyl, partially or perfluorinated C1to C6alkoxy, partially or perdeuterated C1to C6alkyl, partially or perdeuterated C1to Ce alkoxy, halogen, CN or PY(R10)2, wherein Y is selected from O, S or Se, preferably O, and R10is independently selected from C6to C12aryl, C3to C12heteroaryl, C1to Ce alkyl, C1to C6alkoxy, partially or perfluorinated C1to C6alkyl, partially or perfluorinated Ci to C6alkoxy, partially or perdeuterated C1to C6alkyl, partially or perdeuterated Ci to Ce alkoxy;

[0155] -wherein each C6to C12aryl substituent on Z may be substituted with C1to C4alkyl or halogen;

[0156] - G is chosen so that the dipole moment of a compound G-phenyl is ≥ 1 D;

[0157] - the silicon-containing compound comprises at least two Si-atoms;

[0158] - the silicon-containing compound is a silsesquioxane; and

[0159] - the first electron transport layer is free of electrical dopant.

[0160] In this embodiment, the compound of formula (I) and the silsesquioxane may be as described above in detail. In one embodiment an organic light emitting device comprising an anode, a cathode, an emission layer, an electron injection layer and a first electron transport layer; wherein

[0161] - the emission layer, the electron injection layer and the first electron transport layer are arranged between the anode and the cathode;

[0162] - the electron injection layer and the first electron transport layer are arranged between the emission layer and the cathode;

[0163] - the first electron transport layer is arranged between the emission layer and the electron injection layer;

[0164] - the first electron transport layer comprises a compound of Formula (I) and a silicon- containing compound;

[0165] (Ar2)m-(Zk-G)n (I);

[0166] - m and n are independently 1 or 2;

[0167] - k is independently o, 1 or 2;

[0168] - Ar2is independently selected from the group consisting of C2to C42heteroaryl and C6to C60aryl,

[0169] - wherein each Ar2may be substituted with one or two substituents independently selected from the group consisting of C6to C12aiyl, C3to C11heteroaryl, and C1to Ce alkyl, D, C1to C6alkoxy, C3to Ce branched alkyl, C3to Ce cyclic alkyl, C3to Ce branched alkoxy, C3to Ce cyclic alkoxy, partially or perfluorinated C1to C6alkyl, partially or perfluorinated C1to C6alkoxy, partially or perdeuterated C1to C6alkyl, partially or perdeuterated C1to C6alkoxy, halogen, CN or PY(R10)2, wherein Y is selected from O, S or Se, preferably O, and R10is independently selected from C6to C12aryl, C3to C12heteroaryl, C1to C6alkyl, C1to C6alkoxy, partially or perfluorinated C1to C6alkyl, partially or perfluorinated C1to C6alkoxy, partially or perdeuterated C1to C6alkyl, partially or perdeuterated C1to C6alkoxy;

[0170] - wherein each C6to C12aryl substituent on Ar2and each C3to C11heteroaryl substituent on Ar2may be substituted with C1to C4alkyl or halogen;

[0171] - Z is independently selected from C6to C30aryl,

[0172] - wherein each Z may be substituted with one or two substituents independently selected from the group consisting of C6to C12aryl and C1to C6alkyl, D, C1to C6alkoxy, C3to C6branched alkyl, C3to Ce cyclic alkyl, C3to Ce branched alkoxy, C3to Ce cyclic alkoxy, partially or perfluorinated C1to C6alkyl, partially or perfluorinated C1to C6alkoxy, partially or perdeuterated C1to C6alkyl, partially or perdeuterated C1to Ce alkoxy, halogen, CN or PY(R10)2, wherein Y is selected from O, S or Se, preferably O, and R10is independently selected from C6to C12aryl, C3to C12heteroaryl, C1to Ce alkyl, C1to C6alkoxy, partially or perfluorinated C1to C6alkyl, partially or perfluorinated Ci to C6alkoxy, partially or perdeuterated C1to C6alkyl, partially or perdeuterated Ci to Ce alkoxy;

[0173] -wherein each C6to C12aryl substituent on Z may be substituted with C1to C4alkyl or halogen;

[0174] - G is chosen so that the dipole moment of a compound G-phenyl is ≥ 1 D;

[0175] - the silicon-containing compound comprises at least two Si-atoms;

[0176] - the silicon-containing compound is an aryl silane; and

[0177] - the first electron transport layer is free of electrical dopant.

[0178] In this embodiment, the compound of formula (I) and the aryl silane may be as described above in detail.

[0179] Hole blocking layer

[0180] The organic light emitting device may further comprise a hole blocking layer, wherein

[0181] - the hole blocking layer is arranged between the emission layer and the first electron transport layer;

[0182] - the hole blocking layer comprises a compound of formula (IV)

[0183] (Ar1-Ac)a-Xb(IV);

[0184] - a and b are independently i or 2;

[0185] - c is independently o or 1;

[0186] - Ar1is independently selected from C6to C6o aryl or C2to C42heteroaryl,

[0187] - wherein each Ar1may be substituted with one or two substituents independently selected from the group consisting of C6to C12aryl, C3to C11heteroaryl, and C1to C6alkyl, D, C1to C6alkoxy, C3to Ce branched alkyl, C3to C6cyclic alkyl, C3to Ce branched alkoxy, C3to Ce cyclic alkoxy, partially or perfluorinated C1to C6alkyl, partially or perfluorinated C1to C6alkoxy, partially or perdeuterated C1to C6alkyl, partially or perdeuterated C1to C6alkoxy, halogen, CN or PY(R10)2, wherein Y is selected from O, S or Se, preferably O and R10is independently selected from C6to C12aryl, C3to Ci2heteroaryl, C1to C6alkyl, C1to C6alkoxy, partially or perfluorinated C1to C6alkyl, partially or perfluorinated C1to C6alkoxy, partially or perdeuterated C1to C6alkyl, partially or perdeuterated C1to C6alkoxy;

[0188] - wherein each C6to C12aryl substituent on Ar1and each C3to C11heteroaryl substituent on Ar1may be substituted with C1to C4alkyl or halogen;

[0189] - A is independently selected from C6to C30aryl,

[0190] - wherein each A may be substituted with one or two substituents independently selected from the group consisting of C6to C12aryl and C1to C6alkyl, D, C1to C6alkoxy, C3to C6branched alkyl, C3to Ce cyclic alkyl, C3to Ce branched alkoxy, C3to Ce cyclic alkoxy, partially or perfluorinated C1to C6alkyl, partially or perfluorinated C1to C6alkoxy, partially or perdeuterated C1to C6alkyl, partially or perdeuterated C1to Ce alkoxy, halogen, CN or PY(R10)2, wherein Y is selected from O, S or Se, preferably O, and R10is independently selected from C6to C12aryl, C3to C12heteroaryl, C1to Ce alkyl, C1to C6alkoxy, partially or perfluorinated C1to C6alkyl, partially or perfluorinated Ci to C6alkoxy, partially or perdeuterated C1to C6alkyl, partially or perdeuterated Ci to Ce alkoxy;

[0191] - wherein each C6to C12aryl substituent on A may be substituted with C1to C4alkyl or halogen;

[0192] - X is independently selected from the group consisting of C2to C42heteroaryl and Ce to Ceo aryl,

[0193] - wherein each X may be substituted with one or two substituents independently selected from the group consisting of C6to C12aryl, C3to C11heteroaryl, and C1to Ce alkyl, D, C1to C6alkoxy, C3to Ce branched alkyl, C3to Ce cyclic alkyl, C3to Ce branched alkoxy, C3to Ce cyclic alkoxy, partially or perfluorinated C1to C6alkyl, partially or perfluorinated C1to C6alkoxy, partially or perdeuterated C1to C6alkyl, partially or perdeuterated C1to C6alkoxy, halogen, CN or PY(R10)2, wherein Y is selected from O, S or Se, preferably O, and R10is independently selected from C6to C12aryl, C3to C12heteroaryl, C1to C6alkyl, C1to C6alkoxy, partially or perfluorinated C1to C6alkyl, partially or perfluorinated C1to C6alkoxy, partially or perdeuterated C1to C6alkyl, partially or perdeuterated C1to C6alkoxy;

[0194] - wherein each C6to C12aryl substituent on X and each C3to C11heteroaryl substituent on X may be substituted with C1to C4alkyl or halogen; and

[0195] - the molecular dipole moment of the compound of formula (I) is > o D and ≤ 4 D.

[0196] The hole blocking layer, if present, comprises a compound of Formula (IV)

[0197] (Ar1-Ac)a-Xb(IV).

[0198] The hole blocking layer may consist of the compound of Formula (IV). Alternatively, the hole blocking layer may consist of a mixture of the compound of Formula (IV) and one or more further compounds, provided that none of the further compounds is an electrical dopant. The hole blocking layer may comprise more than one compound of Formula (IV). In particular, the hole blocking layer may consist of a mixture of the compound of Formula (IV) and further compounds known in the art as electron transport matrix compounds. Exemplary further electron transport matrix compounds which maybe contained are disclosed below.

[0199] The hole blocking layer may be arranged between the emission layer and the first electron transport layer. The hole blocking layer may be arranged in direct contact with the emission layer. The hole blocking layer maybe arranged “contacting sandwiched” between the emission layer and the first electron transport layer.

[0200] The hole blocking layer may have a thickness of < 50 nm, optionally between 1 and 30 nm, optionally between 1 and lonm, optionally between 1 and 5 nm.

[0201] In the compound of Formula (IV), the group “A” is spacer moiety connecting (if present, that is in case that 0 1) the group Ar1and X. In case that the compound of Formula (IV) comprises more than one groups (Ar1-Ac), the groups may or may not independently comprise the spacer A.

[0202] In the compound of Formula (IV), a and b are independently 1 or 2. Alternatively, a and b may both be 1.

[0203] In the compound of Formula (IV), c is independently o or 1.

[0204] Ar1is independently selected from C6to C6o aryl or C2to C42heteroaryl, alternatively Ce to C54aryl or C2to C39heteroaryl, alternatively C6to C48 aryl or C2to C36 heteroaryl, alternatively Ce to C42aryl or C2to C36 heteroaryl, alternatively C6to C36 aryl or C2to C30heteroaryl, alternatively C6to C30aryl or C2to C24heteroaryl.

[0205] Ar1may be independently C6to C54aryl, optionally C6to C48 aryl, optionally C6to C42aryl, optionally C6to C36 aryl, optionally C6to C30aryl, and optionally C6to C24aryl.

[0206] Ar1maybe independently C2to C42hetroaryl, optionally C2to C40hetroaryl, optionally C2to C36 hetroaryl, optionally C2to C30hetroaryl, and optionally C2to C24hetroaryl.

[0207] In an embodiment Ar1is different from X.

[0208] Ar1may comprise a system of two or more anellated aromatic rings, preferably three or more anellated aromatic rings.

[0209] Ar1may comprise at least one sp3-hypridized carbon atom.

[0210] Ar1may comprise at least one carbon-carbon sp2alkene bond which is not integrated into an aromatic ring structure. In an embodiment where Ar1is independently selected from unsubstituted C2to C42heteroaryl, the heteroatoms are bound into the molecular structure of Ar1by single bonds. Ar1maybe independently selected from the group consisting of phenyl, naphthyl, anthracenyl, fluoranthenyl, xanthenyl, spiro-xanthenyl, fluorenyl, spiro-fluorenyl, triphenylsilyl, tetraphenylsilyl, dibenzo-furanyl, di-dibenzofuranyl, pyrimidinyl, pyrazinyl, aryl-alkenyl or a group having the formula (Ila) - the asterisk symbol represents the binding position for binding the group of formula (Ila) to A; and

[0211] - R1to R5are independently selected from the group consisting of H, C6to C12aryl and C3to Cio, alternatively C4to C5heterorayl.

[0212] Ar1may be independently selected from the group consisting of phenyl, anthracenyl, fluorenyl or the group of the formula (Ila) wherein R1to R5are independently selected from H and phenyl. Ar1may be a group of Formula (Ila) and at least two of R1to R5are not H. In the group of Formula (Ila), at least two of R1to R5which are not H maybe in ortho-position to each other. At least one of R1to R5which is not H may be in ortho-position to the "-position. In this regard, two groups are in ortho position to each other if bound to adjacent carbon atoms of the benzene ring in Formula (Ila), respectively. Ar1may be selected independently from one of the following groups wherein the a the binding position for binding the to A, respectively. In case that Ar1is substituted, each of the substituents maybe independently selected from the group consisting of phenyl, naphtyl, biphenyl, pyridyl, picolinyl, lutidinyl, dibenzofuranyl, dibenzothiophene-yl, and benzothiophene-yl.

[0213] A maybe independently selected from substituted or unsubstituted C6to C30aryl, alternatively C6to C24aryl, alternatively C6to C18aryl.

[0214] A may be selected independently from the group consisting of phenylene, naphthylene, biphenylene and terphenylene which may be substituted or unsubstituted, respectively.

[0215] A maybe selected independently from one of the following groups or combinations thereof wherein the binding positions for binding to Ar1and X can be freely selected, preferably

[0216] In case that A is substituted, each substituent on A may be independently selected from the group consisting of phenyl and C1to C4alkyl.

[0217] X may be independently selected from the group consisting of C2to C39heteroaryl and C6to C54aryl, optionally C2to C36 heteroaryl and C6to C48 aryl, optionally C3to C30heteroaryl and C6to C42aryl, optionally C3to C27heteroaryl and C6to C36 aryl, optionally C3to C24heteroaryl and C6to C30aryl, and optionally C3to C21heteroaryl and C6to C24aryl, wherein the respective group maybe substituted or unsubstituted.

[0218] X may be independently selected from the group consisting of C2to C39N-containing heteroaryl, C2to C39O-containing heteroaryl and Ce to C54aryl, optionally C2to C36 N- containing heteroaryl, C2to C36 O-containing heteroaryl and C6to C48 aryl, optionally C3to C30N-containing heteroaryl, C3to C30O-containing heteroaryl and C6to C42aryl, optionally C3to C27N-containing heteroaryl, C3to C27O-containing heteroaryl and C6to C36 aryl, optionally C3 to C24 N-containing heteroaryl, C3to C24O-containing heteroaryl and C6to C30aryl, and optionally C3to C21N-containing heteroaryl, C3to C21O-containing heteroaryl and Ce to C24aryl.

[0219] X maybe independently selected from the group consisting of C2to C39N-containing heteroaryl and C6to C54aryl, optionally C2to C36N-containing heteroaryl, and C6to C48aryl, optionally C3to C30N-containing heteroaryl and C6to C42aryl, optionally C3to C27N-containing heteroaryl and C6to C36 aryl, optionally C3to C24N-containing heteroaryl and C6to C30aryl, and optionally C3to C21N-containing heteroaryl and C6to C24aryl. In this regard, it may be provided that a respective N-containing heteroaryl comprises one or more N-atoms as the only heteroatom(s).

[0220] X may be independently selected from the group consisting of triazinyl, 1,2-diazinyl, 1,3- diazinyl, 1,4-diazinyl, quinazolinyl, benzoquinazolinyl, benzimidazolyl, quinolinyl, benzoquinolinyl benzoacridinyl, dibenzoacridinyl, fluoranthenyl, anthracenyl, naphthyl, triphenylenyl, phenathrolinyl, and dinaphthofuranyl which may be substituted or unsubstituted, respectively.

[0221] X may be independently selected from the group consisting of triazinyl, 1,2-diazinyl, 1,3- diazinyl, 1,4-diazinyl, quinazolinyl, benzoquinazolinyl, benzoacridinyl, dibenzoacridinyl, fluoranthenyl, anthracenyl, naphthyl, triphenylenyl, phenathrolinyl, and dinaphthofuranyl which may be substituted or unsubstituted, respectively.

[0222] X may be independently selected from the group consisting of triazinyl, 1,2-diazinyl, 1,3- diazinyl, 1,4-diazinyl, quinazolinyl, benzoquinazolinyl, benzoacridinyl, dibenzoacridinyl, fluoranthenyl which may be substituted or unsubstituted, respectively.

[0223] X may be selected independently from one of the following groups wherein the asterisk symbol represents the binding position for binding the group to A, respectively. In case that X is substituted, each substituent on X may be independently selected from the group consisting of phenyl, naphthyl and biphenyl-yl. In case that X is substituted, each substituent on X may be independently selected from the group consisting of phenyl and biphenyl-yl.

[0224] In case that X is substituted, respective substituted X groups may be wherein the asterisk symbol represents the binding position for binding the group to A, respectively.

[0225] It maybe provided that the compound of Formula (IV) does not contain a moiety P=0. It may be provided that the compound of Formula (IV) does not contain P(=0)Aryl2. It may be provided that the compound of Formula (IV) does not contain P(=0)Alkyl2. It maybe provided that the compound of Formula (IV) does not contain P(=0)Ph2. It may be provided that the compound of Formula (IV) does not contain P(=O)(CH3)2. It may be provided that the compound of Formula (IV) does not contain R’P(=O)R” wherein R’ and R” are connected with each other to form a ring, that is, does not contain ring-phosphine oxide. It may be provided that the compound of Formula (IV) does not contain R’P(=O)R” wherein R’ and R” are connected with each other to form a 7-membered ring.

[0226] It may be provided that the compound of Formula (IV) does not contain two moieties P=0. It maybe provided that wherein the compound of Formula (IV) does not contain two P(=0)Aiyl2. It may be provided that wherein the compound of Formula (IV) does not contain two P(=0)Alkyl2. It maybe provided that wherein the compound of Formula (IV) does not contain two P(=0)Ph2. It may be provided that wherein the compound of Formula (IV) does not contain two P(=O)(CH3)2. It maybe provided that wherein the compound of Formula (IV) does not contain CN.

[0227] It maybe provided that one or more of the following formulas are excluded from the scope of the Compound of Formula (IV)

[0228] The compound of Formula (IV) may comprise 6 to 14 aromatic or heteroaromatic rings, optionally 7 to 13 aromatic or heteroaromatic rings, optionally 7 to 12 aromatic or heteroaromatic rings, optionally 9 to 11 aromatic or heteroaromatic rings. In this regard, an aromatic, respectively heteroaromatic ring, is a single aromatic ring, for example a 6- membered aromatic ring such as phenyl, a 6-membered heteroaromatic ring, an example would be pyridyl, a 5-membered heteroaromatic ring an example would be pyrrolyl etc. In a system of condensed (hetero)aromatic rings, each ring is considered as a single ring in this regard. For example, naphthalene comprises two aromatic rings. The molecular dipole moment, computed by the TURBOMOLE V6.5 program package using hybrid functional B3LYP and Gaussian 6-31G* basis set, of the compound of formula (IV) may be > o D and ≤ 4 D; alternatively > o D and ≤ 3.5 D; alternatively > o D and ≤ 3.0 D; alternatively > o D and ≤ 2.5 D; alternatively > o D and ≤ 2.0 D. In this regards, the dipole moment |M| of a molecule containing N atoms is given by: where qtand rtare the partial charge and position of atom i in the molecule. The dipole moment is determined by a semi-empirical molecular orbital method. The geometries of the molecular structures are optimized using the hybrid functional B3LYP with the 6-31G* basis set in the gas phase as implemented in the program package TURBOMOLE V6.5 (TURBOMOLE GmbH, Litzenhardtstrasse 19, 76135 Karlsruhe, Germany). If more than one conformation is viable, the conformation with the lowest total energy is selected to determine the bond lengths of the molecules.

[0229] In an embodiment the LUMO energy level of the compound of formula (IV) in the absolute scale taking vacuum energy level as zero, computed by the TURBOMOLE V6.5 program package using hybrid functional B3LYP and Gaussian 6-31G* basis set, is in the range from - 1.90 eV to -1.60 eV, preferably from -1.87 eV to -1.65 eV, preferably from -1.85 eV to -1.65 eV.

[0230] The compound of Formula (IV) may be selected from the compounds A-i to A-29 of the following Table 4.

[0231] Table 4:

[0232] In an embodiment the LUMO energy level of the compound of formula (IV) in the absolute scale taking vacuum energy level as zero, computed by the TURBOMOLE V6.5 program package using hybrid functional B3LYP and Gaussian 6-31G* basis set, is in the range from - 1.90 eV to -1.60 eV, preferably from -1.85 eV to -1.65 eV.

[0233] Further layers

[0234] In accordance with the invention, the organic light emitting device may comprise, besides the layers already mentioned above, further layers. Exemplary embodiments of respective layers are described in the following: Substrate

[0235] The substrate may be any substrate that is commonly used in manufacturing of, electronic devices, such as organic light-emitting diodes. If light is to be emitted through the substrate, the substrate shall be a transparent or semitransparent material, for example a glass substrate or a transparent plastic substrate. If light is to be emitted through the top surface, the substrate may be both a transparent as well as a non-transparent material, for example a glass substrate, a plastic substrate, a metal substrate or a silicon substrate. It may be provided that the substrate is a non-transparent substrate.

[0236] Anode electrode

[0237] The inventive organic light emitting device comprises an anode (anode electrode). The anode electrode maybe formed by depositing or sputtering a material that is used to form the anode electrode. The material used to form the anode electrode maybe a high work-function material, so as to facilitate hole injection. The anode material may also be selected from a low work function material (i.e. aluminum). The anode electrode may be a transparent or reflective electrode. Transparent conductive oxides, such as indium tin oxide (ITO), indium zinc oxide (IZO), tin-dioxide (SnO2), aluminum zinc oxide (A1Z0) and zinc oxide (ZnO), may be used to form the anode electrode. The anode electrode may also be formed using metals, typically silver (Ag), gold (Au), or metal alloys.

[0238] Hole injection layer

[0239] A hole injection layer (HIL) may be formed on the anode electrode by vacuum deposition, spin coating, printing, casting, slot-die coating, Langmuir-Blodgett (LB) deposition, or the like. When the HIL is formed using vacuum deposition, the deposition conditions may vary according to the compound that is used to form the HIL, and the desired structure and thermal properties of the HIL. In general, however, conditions for vacuum deposition may include a deposition temperature of ioo° C to 500° C, a pressure of 10-8 to 10-3 Torr (1 Torr equals 133.322 Pa), and a deposition rate of 0.1 to 10 nm / sec.

[0240] When the HIL is formed using spin coating or printing, coating conditions may vary according to the compound that is used to form the HIL, and the desired structure and thermal properties of the HIL. For example, the coating conditions may include a coating speed of about 2000 rpm to about 5000 rpm, and a thermal treatment temperature of about 8o° C to about 200° C. Thermal treatment removes a solvent after the coating is performed.

[0241] The HIL may be formed of any compound that is commonly used to form a HIL. Examples of compounds that may be used to form the HIL include a phthalocyanine compound, such as copper phthalocyanine (CuPc), 4,4',4"-tris (3-methylphenylphenylamino) triphenylamine (m- MTDATA), TDATA, 2T-NATA, polyaniline / dodecylbenzenesulfonic acid (Pani / DBSA), poly(3,4-ethylenedioxythiophene) / poly(4-styrenesulfonate) (PEDOT / PSS), polyaniline / camphor sulfonic acid (Pani / CSA), and polyaniline) / poly(4-styrenesulfonate (PANI / PSS). The HIL may comprise or consist of p-type dopant and the p-type dopant may be selected from tetrafluoro-tetracyanoquinonedimethane (F4TCNQ), 2,2'-(perfluoronaphthalen-2,6- diylidene) dimalononitrile or 2,2’,2"-(cyclopropane-i,2,3-triylidene)tris(2-(p- cyanotetrafluorophenyl)acetonitrile) but not limited hereto. The HIL may be selected from a hole-transporting matrix compound doped with a p-type dopant. Typical examples of known doped hole transport materials are: copper phthalocyanine (CuPc), which HOMO level is approximately -5.2 eV, doped with tetrafluoro-tetracyanoquinonedimethane (F4TCNQ), which LUMO level is about -5.2 eV; zinc phthalocyanine (ZnPc) (HOMO = -5.2 eV) doped with F4TCNQ; α-NPD (N,N’-Bis(naphthalen-i-yl)-N,N’-bis(phenyl)-benzidine) doped with F4TCNQ. α-NPD doped with 2,2'-(perfluoronaphthalen-2,6-diylidene) dimalononitrile. The p- type dopant concentrations can be selected from 1 to 20 wt.-%, more preferably from 3 wt.-% to 10 wt.-%.

[0242] The thickness of the HIL may be in the range from about 1 nm to about too nm, and for example, from about 1 nm to about 25 nm. When the thickness of the HIL is within this range, the HIL may have excellent hole injecting characteristics, without a substantial penalty in driving voltage.

[0243] Hole transport layer

[0244] A hole transport layer (HTL) may be formed on the HIL by vacuum deposition, spin coating, slot-die coating, printing, casting, Langmuir-Blodgett (LB) deposition, or the like. When the HTL is formed by vacuum deposition or spin coating, the conditions for deposition and coating maybe similar to those for the formation of the HIL. However, the conditions for the vacuum or solution deposition may vary, according to the compound that is used to form the HTL.

[0245] The HTL may be formed of any compound that is commonly used to form a HTL. Compounds that can be suitably used are disclosed for example in Yasuhiko Shirota and Hiroshi Kageyama, Chem. Rev. 2007, 107, 953-1010 and incorporated by reference. Examples of the compound that may be used to form the HTL are: carbazole derivatives, such as N-phenyl carbazole or polyvinylcarbazole; benzidine derivatives, such as N,N'-bis(3-methylphenyl)-N,N'-diphenyl- [i,i-biphenyl]-4,4'-diamine (TPD), or N,N'-di(naphthalen-i-yl)-N,N'-diphenyl benzidine (alpha-NPD); and triphenylamine-based compound, such as 4,4',4"-tris(N- carbazolyl)triphenylamine (TCTA). Among these compounds, TCTA can transport holes and inhibit excitons from being diffused into the EML.

[0246] The thickness of the HTL may be in the range of about 5 nm to about 250 nm, preferably, about 10 nm to about 200 nm, further about 20 nm to about 190 nm, further about 40 nm to about 180 nm, further about 60 nm to about 170 nm, further about 80 nm to about 160 nm, further about 100 nm to about 160 nm, further about 120 nm to about 140 nm. A preferred thickness of the HTL may be 170 nm to 200 nm.

[0247] When the thickness of the HTL is within this range, the HTL may have excellent hole transporting characteristics, without a substantial penalty in driving voltage.

[0248] Electron blocking layer The function of an electron blocking layer (EBL) is to prevent electrons from being transferred from an emission layer to the hole transport layer and thereby confine electrons to the emission layer. Thereby, efficiency, operating voltage and / or lifetime are improved. Typically, the electron blocking layer comprises a triarylamine compound. The triarylamine compound may have a LUMO level closer to vacuum level than the LUMO level of the hole transport layer. The electron blocking layer may have a HOMO level that is further away from vacuum level compared to the HOMO level of the hole transport layer. The thickness of the electron blocking layer may be selected between 2 and 20 nm.

[0249] If the electron blocking layer has a high triplet level, it may also be described as triplet control layer.

[0250] The function of the triplet control layer is to reduce quenching of triplets if a phosphorescent green or blue emission layer is used. Thereby, higher efficiency of light emission from a phosphorescent emission layer can be achieved. The triplet control layer is selected from triarylamine compounds with a triplet level above the triplet level of the phosphorescent emitter in the adjacent emission layer. Suitable compounds for the triplet control layer, in particular the triarylamine compounds, are described in EP 2 722 908 Al.

[0251] Emission layer (EML)

[0252] The emission layer in the organic light emitting device in accordance with the invention may be a blue emission layer or a green emission layer.

[0253] The EML may be formed on the HTL by vacuum deposition, spin coating, slot-die coating, printing, casting, LB deposition, or the like. When the EML is formed using vacuum deposition or spin coating, the conditions for deposition and coating may be similar to those for the formation of the HIL. However, the conditions for deposition and coating may vary, according to the compound that is used to form the EML.

[0254] It may be provided that the emission layer does not comprise the compound of Formula (I).

[0255] The emission layer (EML) may be formed of a combination of a host and an emitter dopant. Example of the host are Alq3, 4,4'-N,N'-dicarbazole-biphenyl (CBP), poly(n-vinylcarbazole) (PVK), 9,io-di(naphthalene-2-yl)anthracene (ADN), 4,4',4"-tris(carbazol-9-yl)- triphenylamine(TCTA), i,3,5-tris(N-phenylbenzimidazole-2-yl)benzene (TPBI), 3-tert-butyl- 9,io-di-2-naphthylanthracenee (TBADN), distyrylarylene (DSA) and bis(2-(2- hydroxyphenyl)benzo-thiazolate)zinc (Zn(BTZ)2).

[0256] The emitter dopant may be a phosphorescent or fluorescent emitter. Phosphorescent emitters and emitters which emit light via a thermally activated delayed fluorescence (TADF) mechanism may be preferred due to their higher efficiency. The emitter may be a small molecule or a polymer.

[0257] Examples of red emitter dopants are PtOEP, Ir(piq)3, and Btp2lr(acac), but are not limited thereto. These compounds are phosphorescent emitters, however, fluorescent red emitter dopants could also be used. Examples of phosphorescent green emitter dopants are Ir(ppy)3(ppy = phenylpyridine), Ir(ppy)2(acac), Ir(mpyp)3.

[0258] Examples of phosphorescent blue emitter dopants are F2Irpic, (F2ppy)2Ir(tmd) and Ir(dfppz)3and ter-fluorene. 4.4'-bis(4-diphenyl amiostyryl)biphenyl (DPAVBi), 2,5,8,11-tetra-tert-butyl perylene (TBPe) are examples of fluorescent blue emitter dopants.

[0259] The amount of the emitter dopant may be in the range from about 0.01 to about 50 parts by weight, based on too parts by weight of the host. Alternatively, the emission layer may consist of a light-emitting polymer. The EML may have a thickness of about 10 nm to about too nm, for example, from about 20 nm to about 60 nm. When the thickness of the EML is within this range, the EML may have excellent light emission, without a substantial penalty in driving voltage.

[0260] Hole blocking layer (HBL)

[0261] A hole blocking layer (HBL) may be formed on the EML, by using vacuum deposition, spin coating, slot-die coating, printing, casting, LB deposition, or the like, in order to prevent the diffusion of holes into the ETL. When the EML comprises a phosphorescent dopant, the HBL may have also a triplet exciton blocking function.

[0262] The HBL may also be named auxiliary ETL or a-ETL.

[0263] When the HBL is formed using vacuum deposition or spin coating, the conditions for deposition and coating may be similar to those for the formation of the HIL. However, the conditions for deposition and coating may vary, according to the compound that is used to form the HBL. Any compound that is commonly used to form a HBL may be used. Examples of compounds for forming the HBL include oxadiazole derivatives, triazole derivatives, and phenanthroline derivatives.

[0264] The HBL may have a thickness in the range from about 5 nm to about too nm, for example, from about 10 nm to about 30 nm. When the thickness of the HBL is within this range, the HBL may have excellent hole-blocking properties, without a substantial penalty in driving voltage.

[0265] The HBL may be the hole blocking layer in accordance with the present disclosure.

[0266] The hole blocking layer may be free of the silicon-containing compound.

[0267] Electron transport layer (ETL)

[0268] The OLED according to the present invention comprises an electron transport layer (ETL), especially the first electron transport layer as described herein. The OLED according to the present invention may comprise one or more further electron transport layers (ETLs). By suitably adjusting energy levels of particular layers of the ETL, the injection and transport of the electrons may be controlled, and the holes may be efficiently blocked. Thus, the OLED may have long lifetime.

[0269] The electron transport layer may comprise ETM materials known in the art. Suitable compounds for the ETM are not particularly limited.

[0270] It may be provided that the ETL comprises an electron transport matrix compound and an electrical dopant.

[0271] In one embodiment, the electron transport matrix compounds consist of covalently bound atoms. Preferably, the electron transport matrix compound comprises a conjugated system of at least 6, more preferably of at least to delocalized electrons. In one embodiment, the conjugated system of delocalized electrons may be comprised in aromatic or heteroaromatic structural moieties, as disclosed e.g. in documents EP 1970 371 Al or WO 2013 / 079217 Al.

[0272] The ETL other than the first electron transport layer may comprise an electrical dopant, such as an n-type dopant, especially a redox n-type dopant.

[0273] Under electrical dopant, especially n-type dopant it is understood a compound which, if embedded into an electron transport matrix, improves, in comparison with the neat matrix under the same physical conditions, the electron properties of the formed organic material, particularly in terms of electron injection and / or electron conductivity.

[0274] In the context of the present invention “embedded into an electron transport matrix” means homogenously mixed with the electron transport matrix.

[0275] The electrical dopant maybe selected from elemental metals, metal salts, metal complexes and organic radicals.

[0276] In one embodiment, the electrical dopant is selected from alkali metal salts and alkali metal complexes; preferably from lithium salts and lithium organic complexes; more preferably from lithium halides and lithium organic chelates; even more preferably from lithium fluoride, a lithium quinolinolate, lithium borate, lithium phenolate, lithium pyridinolate or from a lithium complex with a Schiff base ligand; most preferably,

[0277] - the lithium complex has the formula II, III or IV: wherein

[0278] A1to A6are same or independently selected from CH, CR, N, O;

[0279] R is same or independently selected from hydrogen, halogen, alkyl or aryl or heteroaryl with 1 to 20 carbon atoms; and more preferred A1to A6are CH,

[0280] - the borate based organic ligand is a tetra(iH-pyrazol-i-yl)borate,

[0281] - the phenolate is a 2-(pyridin-2-yl)phenolate, a 2-(diphenylphosphoryl)phenolate, an imidazol phenolate, 2-(pyridin-2-yl)phenolate or 2-(i-phenyl-iH-benzo[d]imidazol-2- yl)phenolate,

[0282] - the pyridinolate is a 2-(diphenylphosphoryl)pyridin-3-olate, the lithium Schiff base has the structure too, 101, 102 or 103:

[0283] According to one embodiment of the invention, electrical dopant is a lithium organic complex, such as 8-hydroxyquinolinolato-lithium (= LiQ).

[0284] It may be provided that an ETL other than the first electron transport layer is free of the compound of formula (I)

[0285] Electron injection layer (EIL)

[0286] An EIL, which may facilitate injection of electrons from the cathode into the electron transport layer stack, may be formed on the electron transport layer, preferably directly on the electron transport layer. Examples of materials for forming the EIL or being comprised in the EIL include lithium 8-hydroxyquinolinolate (LiQ), LiF, NaCl, C8F, Li2O, BaO, Ca, Ba, Yb, Mg which are known in the art. Deposition and coating conditions for forming the EIL are similar to those for formation of the HIL, although the deposition and coating conditions may vary, according to the material that is used to form the EIL. The EIL may comprise an organic matrix material doped with an n-type dopant. The matrix material may be selected from materials conventionally used as matrix materials for electron transport layers.

[0287] The EIL may consist of a number of individual EIL sublayers. In case the EIL consists of a number of individual EIL sublayers, the number of sublayers is preferably 2. The individual EIL sublayers may comprise different materials for forming the EIL. The thickness of the EIL may be in the range from about o.i nm to about to nm, for example, in the range from about 0.5 nm to about 9 nm. When the thickness of the EIL is within this range, the EIL may have satisfactory electron-injecting properties, without a substantial penalty in driving voltage.

[0288] It may be provided that the electron injection layer does not comprise the compound of formula (I).

[0289] It maybe provided that the electron injection layer is made of Yb.

[0290] Cathode electrode

[0291] The cathode (cathode electrode) is formed on the EIL (if present) or on the ETL, preferably directly on the EIL, preferably in direct contact with the EIL. In the sense of this invention the cathode and the EIL can be regarded as one functional part enabling the injection of electrons into the electron transport layer stack. The cathode electrode may be formed of a metal, an alloy, an electrically conductive compound, or a mixture thereof. The cathode electrode may have a low work function. For example, the cathode electrode may be formed of lithium (Li), magnesium (Mg), aluminum (Al), aluminum (Al)-lithium (Li), calcium (Ca), barium (Ba), ytterbium (Yb), magnesium (Mg)-indium (In), magnesium (Mg)-silver (Ag), or the like, for example an alloy of Ag and Mg, such as Ag:Mg 90:10 wt / wt. Alternatively, the cathode electrode maybe formed of a transparent conductive oxide, such as ITO or IZO.

[0292] The thickness of the cathode electrode maybe in the range from about 5 nm to about 1000 nm, for example, in the range from about 10 nm to about 100 nm. When the thickness of the cathode electrode is in the range from about 5 nm to about 50 nm, the cathode electrode may be transparent or semitransparent even if formed from a metal or metal alloy. The transparent or semitransparent cathode may facilitate light emission through the cathode.

[0293] Charge generation layer (CGL)

[0294] The charge generation layer (CGL) may comprise a p-type charge generation layer (p-CGL) and an n-type charge generation layer (n-CGL). An interlayer may be arranged between the p-CGL and the -n-CGL.

[0295] Typically, the charge generation layer is a p-n junction joining an n-type charge generation layer (electron generating layer) and a hole generating layer. The n-side of the p-n junction generates electrons and injects them into the layer that is adjacent in the direction to the anode. Analogously, the p-side of the p-n junction generates holes and injects them into the layer that is adjacent in the direction to the cathode.

[0296] Charge generating layers are used in tandem and stacked devices, for example, in tandem or stacked OLEDs comprising, between two electrodes, two or more emission layers. In a tandem or stacked OLED comprising two emission layers, the n-type charge generation layer provides electrons for the first light emission layer arranged near the anode, while the hole generating layer provides holes to the second light emission layer arranged between the first emission layer and the cathode. Suitable matrix materials for the hole generating layer may be materials conventionally used as hole injection and / or hole transport matrix materials. Also, p-type dopant used for the hole generating layer can employ conventional materials. For example, the p-type dopant can be one selected from a group consisting of tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4- TCNQ), derivatives of tetracyanoquinodimethane, radialene derivatives, iodine, FeCl3, FeF3, and SbCl5. Also, the host can be one selected from a group consisting of N,N'-di(naphthalen-i- yl)-N,N-diphenyl-benzidine (NPB), N,N'-diphenyl-N,N’-bis(3-methylphenyl)-i,i-biphenyl- 4,4'-diamine (TPD) andN,N',N'-tetranaphthyl-benzidine (TNB). The p-type charge generation layer may consist of CNHAT.

[0297] The n-type charge generating layer maybe the layer comprising the compound of Formula (I). The n-type charge generation layer can be layer of a neat n-type dopant, for example of a metal, or can consist of an organic matrix material doped with the n-type dopant. In one embodiment, the n-type dopant can be alkali metal, alkali metal compound, alkaline earth metal, alkaline earth metal compound, a transition metal, a transition metal compound or a rare earth metal. In another embodiment, the metal can be one selected from a group consisting of Li, Na, K, Rb, C8, Mg, Ca, Sr, Ba, La, Ce, Sm, Eu, Tb, Dy, and Yb. More specifically, the n-type dopant can be one selected from a group consisting of Li, C8, K, Rb, Mg, Na, Ca, Sr, Eu and Yb. Suitable matrix materials for the electron generating layer may be the materials conventionally used as matrix materials for electron injection or electron transport layers. The matrix material can be for example one selected from a group consisting of triazine compounds, hydroxyquinoline derivatives like tris(8-hydroxyquinoline)aluminum, benzazole derivatives, and silole derivatives.

[0298] According to one aspect of the present invention, an electron transport layer comprising the compound of formula (I) is arranged between a first and a second emission layer and a further electron transport layer comprising the compound of formula (I) is arranged between the second emission layer and the cathode.

[0299] According to another aspect of the present invention, there is provided an OLED comprising: a substrate; an anode electrode formed on the substrate; a hole injection layer, a hole transport layer, an electron blocking layer, an emission layer, an auxiliary electron transport layer, an electron transport layer comprising the compound of formula (I) and a cathode electrode.

[0300] According to another aspect of the present invention, there is provided an OLED comprising: a substrate; an anode electrode formed on the substrate; a hole injection layer, a hole transport layer, an electron blocking layer, an emission layer, a auxiliary electron transport layer layer, an electron transport layer comprising the compound of formula (I), an electron injection layer, and a cathode electrode.

[0301] According to various embodiments of the present invention, there may be provided OLEDs layers arranged between the above mentioned layers, on the substrate or on the top electrode.

[0302] In one embodiment, the organic light emitting device according to the invention further comprises a layer comprising a radialene compound and / or a quinodimethane compound. In one embodiment, the radialene compound and / or the quinodimethane compound may be substituted with one or more halogen atoms and / or with one or more electron withdrawing groups. Electron withdrawing groups can be selected from nitrile groups, halogenated alkyl groups, alternatively from perhalogenated alkyl groups, alternatively from perfluorinated alkyl groups. Other examples of electron withdrawing groups may be acyl, sulfonyl groups or phosphoryl groups.

[0303] Alternatively, acyl groups, sulfonyl groups and / or phosphoryl groups may comprise halogenated and / or perhalogenated hydrocarbyl. In one embodiment, the perhalogenated hydrocarbyl may be a perfluorinated hydrocarbyl. Examples of a perfluorinated hydrocarbyl can be perfluormethyl, perfluorethyl, perfluorpropyl, perfluorisopropyl, perfluorobutyl, perfluorophenyl, perfluorotolyl; examples of sulfonyl groups comprising a halogenated hydrocarbyl may be trifluoromethylsulfonyl, pentafluoroethylsulfonyl, pentafluorophenylsulfonyl, heptafluoropropylsufonyl, nonafluorobutylsulfonyl, and like.

[0304] In one embodiment, the radialene and / or the quinodimethane compound may be comprised in a hole injection, hole transporting and / or a hole generation layer.

[0305] In one embodiment, the radialene compound may have Formula (XX) and / or the quinodimethane compound may have Formula (XXIa) or (XXIb):

[0306] (XXIb), wherein (as an exception different to the description above) R1, R2, R3, R4, R5, R6, R7, R8, R11, R12, R15, R16, R20, R21are independently selected from above mentioned electron withdrawing groups and R9, R10, R13, R14, R17, R18, R19, R22, R23and R24are independently selected from H, halogen and above mentioned electron withdrawing groups.

[0307] Process for preparing the organic light emitting device

[0308] According to a further aspect, the invention is related to a process for preparing the organic light emitting device according to the present invention, wherein the process comprises a step of depositing the compound of formula (I) according to the present invention on a solid support.

[0309] The method for depositing may comprise: deposition via vacuum thermal evaporation; deposition via solution processing, preferably the processing is selected from spincoating, printing, casting; and / or slot-die coating.

[0310] Device

[0311] According to a further aspect, the invention is related to a display device or a lighting device comprising the organic light emitting device according to the invention, preferably comprises at least two organic light emitting devices according to the invention.

[0312] The display device may be a television, a tablet, or a mobile phone.

[0313] GENERAL DEFINITIONS

[0314] If not explicitly mentioned else, each moiety of the compounds described herein, especially the compounds of formulas (I) to (IV) maybe substituted with one or more D (deuterium).

[0315] In the present specification, when a definition is not otherwise provided, an "alkyl group" may refer to an aliphatic hydrocarbon group. The alkyl group may refer to "a saturated alkyl group" without any double bond or triple bond. The term “alkyl” as used herein shall encompass linear as well as branched and cyclic alkyl. For example, C3-alkyl maybe selected from n-propyl and iso-propyl. Likewise, C4-alkyl encompasses n-butyl, sec-butyl and t-butyl. Likewise, Ce-alkyl encompasses n-hexyl and cyclo-hexyl.

[0316] As used herein if not explicitly mentioned else, the asterisk symbol represents a binding position at which the moiety labelled accordingly is bond to another moiety.

[0317] The term “aryl” or “arylene” as used herein shall encompass phenyl (C6-aryl), fused aromatics, such as naphthalene, anthracene, phenanthrene, tetracene etc.. Further encompassed are biphenyl and oligo- or polyphenyls, such as terphenyl, phenyl-substituted biphenyl, phenylsubstituted terphenyl (such as tetraphenyl benzene groups) etc.. “Arylene” respectively “heteroarylene”, refers to groups to which two further moieties are attached. In the present specification, the term “aryl group” or “arylene group” may refer to a group comprising at least one hydrocarbon aromatic moiety, and all the elements of the hydrocarbon aromatic moiety may have p-orbitals which form conjugation, for example a phenyl group, a napthyl group, an anthracenyl group, a phenanthrenyl group, a pyrenyl group, a fluorenyl group and the like. Further encompoassed are spiro compounds in which two aromatic moieties are connected with each other via a spiro-atom, such as 9,9’-spirobi[9H-fluorene]yl. The aryl or arylene group may include a monocyclic or fused ring polycyclic (i.e., links sharing adjacent pairs of carbon atoms) functional group.

[0318] The term “heteroaryl” as used herein refers to aryl groups in which at least one carbon atom is substituted with a heteroatom. The term “heteroaryl” may refer to aromatic heterocycles with at least one heteroatom, and all the elements of the hydrocarbon heteroaromatic moiety may have p-orbitals which form conjugation. The heteroatom may be selected from N, O, S, B, Si, P, Se, preferably from N, O and S. A heteroarylene ring may comprise at least 1 to 3 heteroatoms. Preferably, a heteroarylene ring may comprise at least i to 3 heteroatoms individually selected from N, S and / or O. Just as in case of “aryl” / ”aiylene”, the term “heteroaryl” comprises, for example, spiro compounds in which two aromatic moieties are connected with each other, such as spiro [fluorene-9,9’-xanthene]. Further exemplary heteroaryl groups are diazine, triazine, dibenzofurane, dibenzothiofurane, acridine, benzoacridine, dibenzoacridine etc.

[0319] The term “alkenyl” as used herein refers to a group -CR1= CR2R3comprising a carbon-carbon double bond.

[0320] The term “perhalogenated” as used herein refers to a hydrocarbyl group wherein all of the hydrogen atoms of the hydrocarbyl group are replaced by halogen (F, Cl, Br, I) atoms.

[0321] The term “alkoxy” as used herein refers to a structural fragment of the Formula -OR with R being hydrocarbyl, preferably alkyl or cycloalkyl.

[0322] The term “thioalkyl” as used herein refers to a structural fragment of the Formula -SR with R being hydrocarbyl, preferably alkyl or cycloalkyl.

[0323] The subscripted number n in Cn-heteroaryl merely refers to the number of carbon atoms excluding the number of heteroatoms. In this context, it is clear that a C3heteroarylene group is an aromatic compound comprising three carbon atoms, such as pyrazol, imidazole, oxazole, thiazole and the like.

[0324] The term “heteroaryl” as used herewith shall encompass pyridine, quinoline, benzoquinoline, quinazoline, benzoquinazoline, pyrimidine, pyrazine, triazine, benzimidazole, benzothiazole, benzo[4,5]thieno[3,2-d]pyrimidine, carbazole, xanthene, phenoxazine, benzoacridine, dibenzoacridine and the like.

[0325] In the present specification, the term single bond refers to a direct bond.

[0326] The term “fluorinated” as used herein refers to a hydrocarbon group in which at least one of the hydrogen atoms comprised in the hydrocarbon group is substituted by a fluorine atom. Fluorinated groups in which all of the hydrogen atoms thereof are substituted by fluorine atoms are referred to as perfluorinated groups and are particularly addressed by the term “fluorinated”.

[0327] In terms of the invention, a group is “substituted with” another group if one of the hydrogen atoms comprised in this group is replaced by another group, wherein the other group is the substituent.

[0328] In accordance with the present disclosure, as an illustrative example using an arbitrary group A in a formula showing the following binding situation, the group A may be bound to any suitable binding position. In a situation where it is shown that the bond of A crosses more than one ring the group A may be bound to any suitable binding position of each ring crossed with the bond.

[0329] In terms of the invention, the expression “between” with respect to one layer being between two other layers does not exclude the presence of further layers which may be arranged between the one layer and one of the two other layers. In terms of the invention, the expression “in direct contact” with respect to two layers being in direct contact with each other means that no further layer is arranged between those two layers. One layer deposited on the top of another layer is deemed to be in direct contact with this layer.

[0330] The term “contacting sandwiched” refers to an arrangement of three layers whereby the layer in the middle is in direct contact with the two adjacent layers.

[0331] With respect to the first electron transport layer the compounds mentioned in the experimental part are most preferred.

[0332] A lighting device may be any of the devices used for illumination, irradiation, signaling, or projection. They are correspondingly classified as illuminating, irradiating, signaling, and projecting devices. A lighting device usually consists of a source of optical radiation, a device that transmits the radiant flux into space in the desired direction, and a housing that joins the parts into a single device and protects the radiation source and light-transmitting system against damage and the effects of the surroundings.

[0333] According to another aspect, the organic electroluminescent device according to the present invention comprises two or three or more emission layers. An OLED comprising more than one emission layer is also described as a tandem OLED or stacked OLED.

[0334] The organic electroluminescent device (OLED) may be a bottom- or top-emission device. The organic electroluminescent device (OLED) may emit the light through a transparent anode or through a transparent cathode.

[0335] Another aspect is directed to a device comprising at least one organic electroluminescent device (OLED). A device comprising organic light-emitting diodes is for example a display or a lighting panel.

[0336] In the present invention, the following defined terms, these definitions shall be applied, unless a different definition is given in the claims or elsewhere in this specification.

[0337] In the context of the present specification the term “different” or “differs” in connection with the matrix material means that the matrix material differs in their structural Formula.

[0338] The terms “OLED” and “organic light-emitting diode” are used simultaneously and have the same meaning. The term “organic electroluminescent device” as used herein may comprise both organic light emitting diodes as well as organic light-emitting transistors (OLETs).

[0339] As used herein, „weight percent", „wt.-%”, „percent by weight”, „% by weight”, and variations thereof refer to a composition, component, substance or agent as the weight of that component, substance or agent of the respective electron transport layer divided by the total weight of the respective electron transport layer thereof and multiplied by too. It is under-stood that the total weight percent amount of all components, substances and agents of the respective electron transport layer and electron injection layer are selected such that it does not exceed too wt.-%.

[0340] As used herein, „ volume percent", „vol.-%”, „percent by volume”, „% by volume”, and variations thereof refer to a composition, component, substance or agent as the volume of that component, substance or agent of the respective electron transport layer divided by the total volume of the respective electron transport layer thereof and multiplied by too. It is understood that the total volume percent amount of all components, substances and agents of the cathode layer are selected such that it does not exceed too vol.-%.

[0341] All numeric values are herein assumed to be modified by the term "about", whether or not explicitly indicated. As used herein, the term "about" refers to variation in the numerical quantity that can occur. Whether or not modified by the term „about“ the claims include equivalents to the quantities.

[0342] It should be noted that, as used in this specification and the appended claims, the singular forms „a”, „an”, and „the“ include plural referents unless the content clearly dictates otherwise.

[0343] The term “free of’, “does not contain”, “does not comprise” does not exclude impurities. Impurities have no technical effect with respect to the object achieved by the present invention.

[0344] In the context of the present specification the term “essentially non-emissive” or “non- emissive” means that the contribution of the compound or layer to the visible emission spectrum from the device is less than to %, preferably less than 5 % relative to the visible emission spectrum. The visible emission spectrum is an emission spectrum with a wavelength of about ≥ 380 nm to about ≤ 780 nm.

[0345] Preferably, the hole blocking layer comprising the compound of Formula (I) is essentially non- emissive or non-emitting. The operating voltage, also named U, is measured in Volt (V) at to milliampere per square centimeter (mA / cm2).

[0346] The candela per ampere efficiency, also named cd / A efficiency or Ceff, is measured in candela per ampere at to milliampere per square centimeter (mA / cm2).

[0347] The external quantum efficiency, also named EQE, is measured in percent (%).

[0348] The color space is described by coordinates CIE-x and CIE-y (International Commission on Illumination 1931). For blue emission the CIE-y is of particular importance. A smaller CIE-y denotes a deeper blue color. Efficiency values are compared at the same CIE-y.

[0349] The highest occupied molecular orbital, also named HOMO, and lowest unoccupied molecular orbital, also named LUMO, are measured in electron volt (eV).

[0350] The term “OLED”, “organic light emitting diode”, “organic light emitting device”, “organic optoelectronic device” and “organic light-emitting diode” are simultaneously used and have the same meaning.

[0351] The term “life-span” and “lifetime” are simultaneously used and have the same meaning.

[0352] The anode and cathode may be described as anode electrode / cathode electrode or anode electrode / cathode electrode or anode electrode layer / cathode electrode layer.

[0353] Room temperature, also named ambient temperature, is 230C.

[0354] Hereinafter, the embodiments are illustrated in more detail with reference to examples. However, the present disclosure is not limited to the following examples. Reference will now be made in detail to the exemplary aspects.

[0355] DETAILED DESCRIPTION

[0356] The aforementioned components, as well as the claimed components and the components to be used in accordance with the invention in the described embodiments, are not subject to any special exceptions with respect to their size, shape, material selection and technical concept such that the selection criteria known in the pertinent field can be applied without limitations.

[0357] Additional details, characteristics and advantages of the object of the invention are disclosed in the dependent claims and the following description of the respective figures, which in an exemplary fashion show preferred embodiments according to the invention. Any embodiment does not necessarily represent the full scope of the invention, however, and reference is made therefore to the claims and herein for interpreting the scope of the invention. It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are intended to provide further explanation of the present invention as claimed. FIG. 1 is a schematic sectional view of an OLED, according to an exemplary embodiment of the present invention.

[0358] FIG. 2 is a schematic sectional view of an OLED comprising a charge generation layer and two emission layers, according to an exemplary embodiment of the present invention.

[0359] FIG. 3 shows the refractive index of neat layers and mixed layers.

[0360] Hereinafter, the figures are illustrated in more detail with reference to examples. However, the present disclosure is not limited to the following figures.

[0361] Herein, when a first element is referred to as being formed or disposed "on" or “onto” a second element, the first element can be disposed directly on the second element, or one or more other elements may be disposed there between. When a first element is referred to as being formed or disposed "directly on" or “directly onto” a second element, no other elements are disposed there between.

[0362] FIG. 1 is a schematic sectional view of an organic light-emitting diode (OLED) too, according to an exemplary embodiment of the present invention. The OLED too includes a substrate no, an anode 120, a hole injection layer (HIL) 130, a hole transport layer (HTL) 140, an electron blocking layer (EBL) 145, an emission layer (EML) 150, a hole blocking layer 155, and a first electron transport layer (ETL) 160. The first electron transport layer (ETL) 160 is formed on the hole blocking layer 155. The first electron transport layer (ETL) 160 comprises the compound of formula (I) and a Si-containing compound. Onto the first electron transport layer (ETL) 160, an electron injection layer (EIL) 180 is disposed. The cathode 190 is disposed directly onto the electron injection layer (EIL) 180.

[0363] Fig. 2 is a schematic sectional view of an OLED too, according to another exemplary embodiment of the present invention. Fig. 2 differs from Fig. 1 in that the OLED too of Fig. 2 further comprises a charge generation layer (CGL) and a second emission layer (151).

[0364] Referring to Fig. 2, the OLED too includes a substrate 110, an anode 120, a first hole injection layer (HIL) 130, a first hole transport layer (HTL) 140, a first electron blocking layer (EBL) 145, a first emission layer (EML) 150, a first hole blocking layer (HBL) 155, a first electron transport layer (ETL) 160, an n-type charge generation layer (n-type CGL) 185, a hole generating layer (p-type charge generation layer; p-type GCL) 135, a second hole transport layer (HTL) 141, a second electron blocking layer (EBL) 146, a second emission layer (EML) 151, a second hole blocking layer (HBL) 156 and a second electron transport layer (ETL) 161 which comprises the compound of formula (I) and a Si-containing compound, a second electron injection layer (EIL) 181 and a cathode 190.

[0365] While not shown in Fig. 1 and Fig. 2 a sealing layer may further be formed on the cathode electrodes 190, in order to seal the OLEDs too. In addition, various other modifications may be applied thereto.

[0366] Fig. 3 shows the refractive index of neat layers and mixed layers in the wavelength range of 400 nm to 800 nm.. The neat layer consist of compound of formula (I). The mixed layer comprises the compound of formula (I) and the silicon-containing compound. The mixed layer show a lower refractive index than the neat layers.

[0367] Hereinafter, the embodiments are illustrated in more detail with reference to examples. However, the present disclosure is not limited to the following examples.

[0368] EXPERIMENTAL PART

[0369] Melting point

[0370] The melting point (mp) is determined as peak temperatures from the DSC curves of the above TGA-DSC measurement or from separate DSC measurements (Mettler Toledo DSC822e, heating of samples from room temperature to completeness of melting with heating rate to K / min under a stream of pure nitrogen. Sample amounts of 4 to 6 mg are placed in a 40 pL Mettler Toledo aluminum pan with lid, a <1 mm hole is pierced into the lid).

[0371] Glass transition temperature

[0372] The glass transition temperature (Tg) is measured under nitrogen and using a heating rate of 10 K per min in a Mettler Toledo DSC 822e differential scanning calorimeter as described in DIN EN ISO 11357, published in March 2010.

[0373] Rate onset temperature

[0374] The rate onset temperature (TRO) is determined by loading 100 mg compound into a VTE source. As VTE source a point source for organic materials maybe used as supplied by Kurt J. Lesker Company (www.lesker.com) or CreaPhys GmbH (http: / / www.creaphys.com). The VTE source is heated at a constant rate of 15 K / min at a pressure of less than io-5mbar and the temperature inside the source measured with a thermocouple. Evaporation of the compound is detected with a QCM detector which detects deposition of the compound on the quartz crystal of the detector. The deposition rate on the quartz crystal is measured in Angstrom per second. To determine the rate onset temperature, the deposition rate is plotted against the VTE source temperature. The rate onset is the temperature at which noticeable deposition on the QCM detector occurs. For accurate results, the VTE source is heated and cooled three time and only results from the second and third run are used to determine the rate onset temperature.

[0375] To achieve good control over the evaporation rate of an organic compound, the rate onset temperature may be in the range of 200 to 255 °C. If the rate onset temperature is below 200 °C the evaporation may be too rapid and therefore difficult to control. If the rate onset temperature is above 255 °C the evaporation rate may be too low which may result in low tact time and decomposition of the organic compound in VTE source may occur due to prolonged exposure to elevated temperatures.

[0376] The rate onset temperature is an indirect measure of the volatility of a compound. The higher the rate onset temperature the lower is the volatility of a compound.

[0377] Reduction potential The reduction potential is determined by cyclic voltammetry with potenioststic device Metrohm PGSTAT30 and software Metrohm Autolab GPES at room temperature. The redox potentials given at particular compounds were measured in an argon de-aerated, dry 0.1M THF solution of the tested substance, under argon atmosphere, with 0.1M tetrabutylammonium hexafluorophosphate supporting electrolyte, between platinum working electrodes and with an Ag / AgCl pseudo-standard electrode (Metrohm Silver rod electrode), consisting of a silver wire covered by silver chloride and immersed directly in the measured solution, with the scan rate too mV / s. The first run was done in the broadest range of the potential set on the working electrodes, and the range was then adjusted within subsequent runs appropriately. The final three runs were done with the addition of ferrocene (in 0.1M concentration) as the standard. The average of potentials corresponding to cathodic and anodic peak of the studied compound, after subtraction of the average of cathodic and anodic potentials observed for the standard Fc+ / Fc redox couple, afforded finally the values reported above. All studied compounds as well as the reported comparative compounds showed well-defined reversible electrochemical behaviour.

[0378] Dipole moment

[0379] The dipole moment of a molecule containing N atoms is given by: where qiand are the partial charge and position of atom i in the molecule.

[0380] The dipole moment is determined by a semi-empirical molecular orbital method.

[0381] The geometries of the molecular structures are optimized using the hybrid functional B3LYP with the 6-31G* basis set in the gas phase as implemented in the program package TURBOMOLE V6.5 (TURBOMOLE GmbH, Litzenhardtstrasse 19, 76135 Karlsruhe, Germany). If more than one conformation is viable, the conformation with the lowest total energy is selected to determine the bond lengths of the molecules.

[0382] Calculated HOMO and LUMP

[0383] The HOMO and LUMO are calculated with the program package TURBOMOLE V6.5 (TURBOMOLE GmbH, Litzenhardtstrasse 19, 76135 Karlsruhe, Germany). The optimized geometries and the HOMO and LUMO energy levels of the molecular structures are determined by applying the hybrid functional B3LYP with a 6-31G* basis set in the gas phase. If more than one conformation is viable, the conformation with the lowest total energy is selected. Refractive index measurement of thin films

[0384] Films of materials with a thickness of 70 nm on silicon substrates (0.5 nm native Si02, 675 pm thickness, Siegert Wafer GmbH) are prepared by thermal evaporation for the neat layers and thermal co-evaporation for the mixed layers in a vacuum system (Cluster Tool, Sunic System Ltd.) at a deposition rate of 1 A / s and a pressure of approximately 3e-7 mbar. The samples are stored in glovebox with pure nitrogen atmosphere until the measurement takes place (maximum 1 hour of air exposure). Reflectance is measured using a Filmetrics F10-RT Spectrometer with a spectral range of 380 nm to 1050 nm. A silicon reference sample from Filmetrics is used for reflectance standard. Measured reflectance data is then modelled using the Cauchy model in the FILMeasure software, which results in the refractive index in the range of 420 nm to 1020 nm.

[0385] Material Details

[0386] Device experiments General procedure for fabrication ofOLEDs

[0387] For the top emission OLED devices a substrate with dimensions of 150 mm x 150 mm x 0.7 mm was ultrasonically cleaned with a 2% aqueous solution of Deconex FPD 211 for 7 minutes and then with pure water for 5 minutes, and dried for 15 minutes in a spin rinse dryer. Subsequently, Ag was deposited as anode at a pressure of io-5to io-7mbar. Then, HT-1 and D-i were vacuum co-deposited on the anode to form a HIL. Then, HT-1 was vacuum deposited on the HIL to form an HTL. Then, HT-2 was vacuum deposited on the HTL to form an electron blocking layer (EBL).

[0388] Afterwards the emission layer was formed on the EBL by co-deposition of HOST-1 and EMITTER-1.

[0389] Then, ET-i was vacuum deposited onto the emission layer to form the HBL. Then, first electron transport layer was formed on the HBL by depositing a compound of Formula (I) and the Si- containing compound. For the comparative example in table 7 the first electron transport layer was formed on the HBL by depositing a compound of Formula (I) and the Si-containing compound and Yb. For the comparative examples in table 8 the first electron transport layer was formed on the HBL by depositing a compound of Formula (I) only.

[0390] Then, the electron injection layer is formed as a double layer on the first electron transport layer by depositing first LiQ or ET-2:Li, according to tables 7 and 8, and subsequently Yb.

[0391] Ag:Mg is then evaporated at a rate of 0.01 to 1 A / s at io-7mbar to form a cathode.

[0392] A cap layer of HT-3 is formed on the cathode.

[0393] The details of the layer stack in the top emission OLED devices are given below. A slash separates individual layers. Layer thicknesses are given in squared brackets [...], mixing ratios in wt% given in round brackets (...):

[0394] HT-i:D-i (8%), lonm / HT-1, I33nm HT-2, 5nm / HOST-1 H09: EM11TER-1 BD200 (3%), 20nm / ET-i, 5nm / Comparative or inventive first ETL, 30nm / LiQ (inm) or ET-2:Li (1%, I5nm) / Yb, 2nm / Ag:Mg (10%), I3nm / HT-3, 75nm

[0395] Table 5: Tested silicon-containing compounds

[0396] Tested compounds of formula i

[0397] Table 6: Further compounds used for device preparation Table 7: Effect of the absence of electrical dopant in the first electron transport layer

[0398] Table 8: Effect of adding Si-containing compound to compound of formula (I) for forming a first electron transport layer

[0399] As it can be seen from Tables 7 and 8, the use of a combination of a compound of formula (I) with a Si-containing compound comprising at least two Si-atoms in an undoped first electron transport layer results in improved efficiency of an OLED.

[0400] The features disclosed in the foregoing description and in the dependent claims may, both separately and in any combination thereof, be material for realizing the aspects of the disclosure made in the independent claims, in diverse forms thereof.

Claims

Claims1. Organic light emitting device comprising an anode, a cathode, an emission layer, an electron injection layer and a first electron transport layer; wherein the emission layer, the electron injection layer and the first electron transport layer are arranged between the anode and the cathode; the electron Injection layer and the first electron transport layer are arranged between the emission layer and the cathode; - the first electron transport layer is arranged between the emission layer and the electron injection layer; the first electron transport layer comprises a compound of Formula (I) and a silicon-containing compound;(Ar2)m-(Zk-G)n(I); - m and n are independently i or 2; k is independently o, 1 or 2;Art is independently selected from the group consisting of C2to C42heteroaryl and C6to C60aryl,- wherein each Ar2may be substituted with one or two substituents independently selected from the group consisting of C6to C12aryl, C3to C11heteroaryl, and C6to C6alkyl, D, C1to C6alkoxy, C3to C6branched alkyl, C3to C6cyclic alkyl, C3to C6branched alkoxy, C3to C6cyclic alkoxy, partially or perfluorinated C1to C6alkyl, partially or perfluorinated C1to C6alkoxy, partially or perdeuterated C1to C6alkyl, partially or perdeuterated C1to C6alkoxy, halogen, ON or PY(R10)2, wherein Y is selected from 0, S or Se, preferably 0, and R10is independently selected from C6to C12aryl, C3to C12heteroaryl, C1to C6alkyl, C1to C6alkoxy, partially or perfluorinated C1to C6alkyl, partially or perfluorinated C1to C6alkoxy, partially or perdeuterated C1to C6alkyl, partially or perdeuterated C1to C6alkoxy; - wherein each C6to C12aryl substituent on Ar2and each C3to C11heteroaryl substituent on Arzmay be substituted with G to C4alkyl or halogen;Z is independently selected from C6to C30aryl,- wherein each Z may be substituted with one or two substituents independently selected from the group consisting of C6to C12aryl and G toC6alkyl, D, C1to C6alkoxy, C3to C6branched alkyl, C3to C* cyclic alkyl, C3to C8branched alkoxy, C3to Os cyclic alkoxy, partially or perfluorinated Ci to C6alkyl, partially or perfluorinated C1to C6alkoxy, partially or perdeuterated C> to C8alkyl, partially or perdeuterated C1to C6alkoxy, halogen, CN or PY(R1O)2, wherein Y is selected from 0, S or Se, preferably 0, and R10is independently selected from C6to C12aryl, C3to C12heteroaryl, C1to C6alkyl, C1to C6alkoxy, partially or perfluorinated C1to C6alkyl, partially or perfluorinated Ci to C6alkoxy, partially or perdeuterated C1to C6alkyl, partially or perdeuterated C1to C6alkoxy;- wherein each C6to C12aryl substituent on Z may be substituted with C1to C4alkyl or halogen;G is chosen so that the dipole moment of a compound G-phenyl is ≥ 1 D; the silicon-containing compound comprises at least two Si-atoms; and the first electron transport layer is free of electrical dopant.

2. Organic light emitting device according to claim 1, wherein the silicon-containing compound is a silsesquioxane, an aryl silane or a mixture of two or more thereof.

3. Organic light emitting device according to claim 2, wherein the silsesquioxane has the formula (II)SixRxO1.5x(II) whereinR is independently selected from C1to C h30ydorcarbyl,- wherein each C1to C30hydrocarbyl independently may be substituted with one or more halogen; and x is selected from 6, 8, 10, 12, 14 and 16.

4. Organic light emitting device according to claim 3, wherein R is independently selected from C1to C12alkyl.

5. Organic light emitting device according to claim 3 or 4, wherein the halogen is F.

6. Organic light emitting device according to any of the claims 3 to 5, wherein x is 8 or 12.

7. Organic light emitting device according to any of the claims 3 to 6, wherein the silsesquioxane has the formula S-1 or S-28. Organic light emitting device according to claim 2, wherein the aryl silane has the formula (III),whereinArS1to ArS7are independently selected from C6to C24aryl.

9. Organic light emitting device according to claim 8, wherein Ars1to Ars3and ArS5to Ars7are independently selected from C6to C60aryl- 10. Organic light emitting device according to claim 8 or 9, wherein Ars4is C12to C24aryl.

11. Organic light emiting device according to any of the claims 8 to 10, wherein the aryl silane has the formula S-412. Organic light emitting device according to any of the preceding claims, whereinG is selected from the group consisting of dialkylphosphine oxide, diarylphosphine oxide, alkylarylphosphine oxide, nitrile, benzonitrile, nicotinonitrile, amide-yl, carbamide-yl and C2to C17heteroaryl; the respective G may include one or more substituents attached to the group, wherein the one or more substituents are selected from the group consisting of phenyl, methyl, ethyl, and pyridyl.

13. Organic light emitting device according to any of the preceding claims, wherein the organic light emitting device further comprises a hole blocking layer, wherein the hole blocking layer is arranged between the emission layer and first electron transport layer; the hole blocking layer comprises a compound of formula (IV)(Ar1-Ac)a-Xb(IV); a and b are independently 1 or 2; c is independently o or 1;Ar1is independently selected from C6to C60aryl or C2to C42heteroaryl,- wherein each Ar1may be substituted with one or two substituents independently selected from the group consisting of C6to C12aryl, C3to C11heteroaryl, and C1to C6alkyl, D, G to C6alkoxy, C3to C6branched alkyl, C3to C6cyclic alkyl, C3to C6branched alkoxy, C3to C6cyclic alkoxy, partially or perfluorinated C, to C8alkyl, partially or perfluorinated G to C6alkoxy, partially or perdeuterated G to C6alkyl, partially or perdeuterated G to C6alkoxy, halogen, CN or PY(R10)2, wherein Y is selected from O, S or Se, preferably O and R10is independently selected from C6to C12aryl, C3to CMheteroaiyl, G to G alkyl, G to G alkoxy, partially or perfluorinated G to C6alkyl, partially or perfluorinated C1to C6alkoxy, partially or perdeuterated Ci to C6alkyl, partially or perdeuterated C1to C6alkoxy; wherein each C6to C12aryl substituent on Art and each C3to C11heteroaryl substituent on Ar1may be substituted with C> to C4alkyl or halogen;A is independently selected from C6to C30aryl,- wherein each A may be substituted with one or two substituents independently selected from the group consisting of C6to C12aryl and C, to C6alkyl, D, C1to C6alkoxy, C3to C6branched alkyl, C3to C6cyclic alkyl, C3to C6branched alkoxy, C3to C6cyclic alkoxy, partially or perfluorinated C1to C6alkyl, partially or perfluorinated C1to C6alkoxy, partially or perdeuterated Cj to C6alkyl, partially or perdeuterated C1to C6alkoxy, halogen, CN or PY(R10)2, wherein Y is selected from 0, S or Se, preferably 0, and R10is independently selected from C6to C12aryl, C3to C12heteroaryl, Ci to C6alkyl, C1to C6alkoxy, partially or perfluorinated C1to C6alkyl, partially or perfluorinated C1to C6alkoxy, partially or perdeuterated C1to C6alkyl, partially or perdeuterated C1to C6alkoxy;- wherein each Co to C12aryl substituent on A may be substituted with C, to C4alkyl or halogen;X is independently selected from the group consisting of C2to C42heteroaryl and C6to C60aryl,- wherein each X may be substituted with one or two substituents independently selected from the group consisting of Co to C12aryl, C3to C11heteroaryl, and C1to C6alkyl, D, C1to Co alkoxy, C3to C6branched alkyl, C3to Co cyclic alkyl, C3to Q branched alkoxy, C3to C6cyclic alkoxy, partially or perfluorinated C, to Co alkyl, partially or perfluorinated C1to C6alkoxy, partially or perdeuterated C, to Co alkyl, partially or perdeuterated C1to Co alkoxy, halogen, CN or PY(R10)2, wherein Y is selected from 0, S or Se, preferably 0, and R10is independently selected from Co to C12aryl, C3to C12heteroaryl, C1to Co alkyl, C1to C6alkoxy, partially or perfluorinated C1to Co alkyl, partially or perfluorinated Cj to Co alkoxy, partially or perdeuterated Ci to Co alkyl, partially or perdeuterated C1to Co alkoxy;- wherein each Co to C1 2aryl substituent on X and each C3to Cnheteroaryl substituent on X may be substituted with Cj to C4alkyl or halogen; and the molecular dipole moment of the compound of formula (IV) is > o D and ≤ 4 D.

14. Organic light emitting device according to any of the preceding claims, wherein the first electron transport layer is in direct contact with the electron injection layer.

15. Device comprising the organic light emitting device according to any of the preceding claims, wherein the device is a display device or a lighting device.

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