Magnetoresistance effect element and magnetic memory

Abstract

A magnetoresistance effect element according to the present invention comprises: a substrate; a base layer that is provided on the substrate; and a laminated portion that is provided on the base layer and that comprises a magnetization free layer, a reference layer, and a non-magnetic layer provided between the magnetization free layer and the reference layer. The base layer comprises two or more metal nitride layers, and a metal oxynitride layer provided between a first metal nitride layer and a second metal nitride layer among the two or more metal nitride layers.

Description

Magnetoresistance effect element and magnetic memory

[0001] The present invention relates to a magnetoresistive element and a magnetic memory.

[0002] Giant magnetoresistance (GMR) elements and magnetoresistance (TMR) elements, each having a stack of a magnetization free layer made of a ferromagnetic material, a non-magnetic spacer layer, and a reference layer (fixed layer) made of a ferromagnetic material stacked in this order, are being developed as elements for devices such as magnetic field sensors, magnetic heads, and magnetic random access memories (MRAMs).

[0003] S. Yuasa et al. Nature Materials 3, 868-871, 2004J. Slonczewski: J. Magn. Magn. Mater. 159 (1996) L1S. Takahashi and S. Maekawa, Phys. Rev. Lett. 80, 1758 (1998)

[0004] In devices such as MRAMs that use the magnetoresistive effect elements described above, it is desirable to improve the flatness and crystallinity of the layers that make up the magnetoresistive effect elements from the viewpoint of reliability related to the device lifespan and the like.

[0005] The present invention has been made in consideration of the above-mentioned problems, and aims to provide a magnetoresistive element having layers that are highly flat and crystalline, and a magnetic memory that uses such a magnetoresistive element.

[0006] In order to solve the above-mentioned problems, the magnetoresistive effect element of the present invention comprises a substrate, an underlayer provided on the substrate, and a stacked portion provided on the underlayer and comprising a magnetization free layer, a reference layer, and a non-magnetic layer provided between the magnetization free layer and the reference layer, wherein the underlayer comprises two or more metal nitride layers and a metal oxynitride layer provided between a first metal nitride layer and a second metal nitride layer of the two or more metal nitride layers.

[0007] In the magnetoresistive effect element according to the present invention, the underlayer includes at least three layers, and therefore there are at least two interfaces between two layers made of different materials. Therefore, when the underlayer is formed, the layer formed on the interface is more likely to crystallize, and the crystallinity and flatness of the uppermost layer of the two or more metal nitride layers in the underlayer are improved compared to when the entire underlayer 1 is formed only from the material that constitutes the uppermost layer. Therefore, the crystallinity and flatness of the layers that constitute the stacked portion formed on such an underlayer can be improved.

[0008] Furthermore, in the magnetoresistive element according to the present invention, the metal constituting the first metal nitride layer and the metal constituting the second metal nitride layer can be different, in which case the at least two interfaces are formed by a combination of different layers, and therefore the effect of improving the crystallinity and flatness of the layers constituting the stacked portion due to the presence of the at least two interfaces is more effectively exhibited.

[0009] Furthermore, the magnetoresistive element according to the present invention may further include a metal layer provided between the underlayer and the laminated portion, in which case the metal layer can further improve the crystallinity and flatness of the layers constituting the laminated portion formed thereon.

[0010] Furthermore, in the magnetoresistive element according to the present invention, the reference layer may include a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic insertion layer provided therebetween to exchange-couple the first ferromagnetic layer and the second ferromagnetic layer, thereby further stabilizing the magnetization direction of the reference layer.

[0011] Furthermore, in the magnetoresistive element according to the present invention, the first metal nitride layer may be provided on the substrate side of the metal oxynitride layer, and the second metal nitride layer may be provided on the stacked portion side of the metal oxynitride layer, with the first metal nitride layer being the thickest in the underlayer. In this case, at least one of the at least two interfaces of the underlayer is located close to the stacked portion. Therefore, the effect of improving the crystallinity and flatness of the layers constituting the stacked portion due to the presence of at least two interfaces is more effectively exerted.

[0012] Furthermore, in the magnetoresistive effect element according to the present invention, the underlayer may further include a third metal nitride layer as one of the two or more metal nitride layers, and the metal nitride layer located in the middle of the thickness direction of the underlayer may be the thickest among the first metal nitride layer, the second metal nitride layer, and the third metal nitride layer.

[0013] Furthermore, in the magnetoresistive element according to the present invention, the metal nitride layer closest to the substrate among the two or more metal nitride layers may be thicker than the metal oxynitride layer. In this case, the positions of the at least two interfaces of the underlayer are closer to the stacked portion. Therefore, the effect of improving the crystallinity and flatness of the layers constituting the stacked portion due to the presence of the at least two interfaces is more effectively exerted.

[0014] Furthermore, in the magnetoresistive effect element according to the present invention, the metal constituting the metal nitride layer closest to the stacked portion among the two or more metal nitride layers can be the same as the metal constituting the metal nitride layer closest to the substrate among the two or more metal nitride layers.

[0015] Furthermore, in the magnetoresistive element according to the present invention, the thickness of the underlayer can be 50 nm or more.

[0016] A magnetic memory according to the present invention includes a plurality of any one of the magnetoresistive effect elements described above.

[0017] According to the present invention, there are provided a magnetoresistive element having layers that are highly flat and highly crystalline, and a magnetic memory that uses such a magnetoresistive element.

[0018] It is a diagram showing a longitudinal cross-sectional structure of a magnetoresistive effect element according to an embodiment. It is a diagram showing a detailed longitudinal cross-sectional structure of an underlayer and a metal layer. It is a diagram showing a detailed longitudinal cross-sectional structure of an underlayer and a metal layer of a TMR element according to a modified example of an embodiment. It is a longitudinal cross-sectional view of a TMR element 30. It is a diagram showing a circuit diagram of a magnetic memory 100.

[0019] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In each drawing, the same reference numerals are used for the same elements where possible. Furthermore, the dimensional ratios within and between elements in the drawings are arbitrary for ease of viewing.

[0020] FIG. 1 is a diagram showing the longitudinal cross-sectional structure of a magnetoresistive element according to this embodiment. The magnetoresistive element according to this embodiment is a tunneling magnetoresistive (TMR) element 30. As shown in FIG. 1, the TMR element 30 includes a substrate E1 that functions as an electrode, an underlayer 1 provided on the substrate E1, a metal layer 1M provided on the underlayer 1, a stacked portion MS provided on the metal layer 1M, and electrode layers 12 and 13 provided on the stacked portion MS. FIG. 1 illustrates a Cartesian coordinate system, with the Z axis defined in the stacking direction of each layer of the TMR element 30 and the X and Y axes defined in the in-plane directions of each layer of the TMR element 30. In FIG. 2 and subsequent figures, the Cartesian coordinate system is also shown as necessary to correspond to FIG. 1.

[0021] The substrate E1, which functions as an electrode, is made of a non-magnetic metal such as Al, Cu, or Ta. The metal layer 1M is made of a metal material such as Mg or Fe, and is provided for the purpose of improving the crystallinity of the upper layers. The TMR element 30 does not necessarily have to include the metal layer 1M.

[0022] The stacked portion MS comprises a first buffer layer 2 made of a metal such as Fe or Cr, a second buffer layer 3 made of an alloy such as NiCr, a reference layer R, a tunnel barrier layer 7 as a non-magnetic layer, a magnetization free layer 8, a first cap layer 9, an intermediate layer 10, and a second cap layer 11.

[0023] The reference layer R includes a first ferromagnetic layer 4, a nonmagnetic insertion layer 5, and a second ferromagnetic layer 6. The first ferromagnetic layer 4 is made of a ferromagnetic material such as CoNi. The nonmagnetic insertion layer 5 is made of a nonmagnetic material such as Ir or Mo. The second ferromagnetic layer 6 is made of a ferromagnetic material such as CoFeB. The nonmagnetic insertion layer 5 is provided between the first ferromagnetic layer 4 and the second ferromagnetic layer 6 so as to exchange-couple them. As a result, the magnetization directions of the first ferromagnetic layer 4 and the second ferromagnetic layer 6, indicated by the arrows in FIG. 1, are coupled so as to be parallel to each other.

[0024] The tunnel barrier layer 7 is provided between the reference layer R and the magnetization free layer 8. The tunnel barrier layer 7 allows electrons to pass through by utilizing the tunnel effect. The tunnel barrier layer 7 is made of, for example, MgO, Al ２ O ３ , ZnO, GaO, and MgAl ２ O ４ The magnetization free layer 8 is made of at least one material selected from the group consisting of: The magnetization free layer 8 is made of a ferromagnetic material containing, for example, Co or a ferromagnetic material containing at least two elements selected from the group consisting of Co, Ni, Fe, and B, for example, CoFeB. The magnetization direction of the magnetization free layer 8, indicated by the arrow in FIG. 1, can be easily changed. When the magnetization directions of the reference layer R and the magnetization free layer 8 are parallel, the magnetoresistance is low. On the other hand, when these directions are antiparallel, the magnetoresistance is high.

[0025] When the tunnel barrier layer 7 is made of a material such as MgO, perpendicular magnetic anisotropy can be imparted to the ferromagnetic material of the reference layer R and the first ferromagnetic layer 4. In this case, as shown in FIG. 1 , the magnetization directions of the first ferromagnetic layer 4 and the second ferromagnetic layer 6 of the reference layer R are fixed along the Z axis, and the easy axis of magnetization of the magnetization free layer 8 is oriented along the Z axis.

[0026] The first cap layer 9 is provided on the magnetization free layer 8 and is made of a nonmagnetic oxide material such as MgO. The thickness of the first cap layer 9 is smaller than the thickness of the tunnel barrier layer 7. The intermediate layer 10 is a layer containing a ferromagnetic element such as Co or Fe, and is made of an alloy such as CoFe, and is provided so as to be interposed between the first cap layer 9 and the second cap layer 11. The second cap layer 11 is provided on the intermediate layer 10 and contains at least one element selected from the group consisting of Ru, Mo, and W.

[0027] The electrode layer 12 is made of a conductive material, for example, a Ru / Mo / Ru laminate, and the electrode layer 13 is made of a conductive material, for example, a metal such as W or Mo.

[0028] 2 is a diagram showing detailed longitudinal cross-sectional structures of the underlayer and the metal layer. The underlayer 1 has a configuration in which multiple layers are stacked in the Z-axis direction, and in this embodiment, it has three metal nitride layers and one metal oxynitride layer. Specifically, as shown in FIG. 2, the underlayer 1 has a first metal nitride layer 1B, a second metal nitride layer 1D, a metal oxynitride layer 1C provided between the first metal nitride layer 1B and the second metal nitride layer 1D in the Z-axis direction, and a third metal nitride layer 1A provided between the first metal nitride layer 1B and the substrate E1.

[0029] The first metal nitride layer 1B is provided on the substrate E1 side of the metal oxynitride layer 1C, and the second metal nitride layer 1D is provided on the stacked portion MS (see FIG. 1 ) side of the metal oxynitride layer 1C. The second metal nitride layer 1D is the metal nitride layer that is provided closest to the stacked portion MS (see FIG. 1 ) of the metal nitride layers that the underlayer 1 has, and the third metal nitride layer 1A is the metal nitride layer that is provided closest to the substrate E1 of the metal nitride layers that the underlayer 1 has.

[0030] In the underlayer 1, an interface X1 is formed between the first metal nitride layer 1B and the metal oxynitride layer 1C, an interface X2 is formed between the metal oxynitride layer 1C and the second metal nitride layer 1D, and an interface X3 is formed between the third metal nitride layer 1A and the first metal nitride layer 1B.

[0031] The underlayer 1 is formed, for example, by depositing a third metal nitride layer 1A, a first metal nitride layer 1B, a metal oxynitride layer 1C, and a second metal nitride layer 1D in this order on a substrate E1.

[0032] The first metal nitride layer 1B, the second metal nitride layer 1D, and the third metal nitride layer 1A are made of metal nitrides such as tantalum nitride (TaN) and titanium nitride (TiN). The first metal nitride layer 1B and the third metal nitride layer 1A are made of different metal nitrides. The metal oxynitride layer 1C is made of a metal oxynitride such as titanium oxynitride (TiON) and tantalum oxynitride (TaON).

[0033] In this embodiment, the metal constituting the first metal nitride layer 1B is different from the metal constituting the second metal nitride layer 1D. Also, in this embodiment, the metal constituting the second metal nitride layer 1D is the same as the metal constituting the third metal nitride layer 1A. These conditions can be achieved, for example, by making the first metal nitride layer 1B from titanium nitride (TiN), the second metal nitride layer 1D from tantalum nitride (TaN), and the third metal nitride layer 1A from tantalum nitride (TaN).

[0034] The thickness in the Z-axis direction of the first metal nitride layer 1B can be, for example, 5 nm or more and 100 nm or less, the thickness in the Z-axis direction of the second metal nitride layer 1D can be, for example, 2 nm or more and 50 nm or less, the thickness in the Z-axis direction of the metal oxynitride layer 1C can be, for example, 2 nm or more and 50 nm or less, and the thickness in the Z-axis direction of the third metal nitride layer 1A can be, for example, 5 nm or more and 50 nm or less.

[0035] 3 is a diagram showing a detailed longitudinal cross-sectional structure of the underlayer and metal layer of a TMR element according to a modification of this embodiment. The TMR element according to this modification differs from the TMR element 30 according to the basic embodiment in the configuration of the underlayer. Specifically, the underlayer 1x according to this modification has a configuration in which the first metal nitride layer 1B is removed from the underlayer 1 (see FIG. 2) of the basic embodiment. Therefore, in this modification, the underlayer 1x has two metal nitride layers (second metal nitride layer 1D and third metal nitride layer 1A) and one metal oxynitride layer (metal oxynitride layer 1C).

[0036] In the underlayer 1x, an interface X4 is formed between the third metal nitride layer 1A and the metal oxynitride layer 1C, and an interface X2 is formed between the metal oxynitride layer 1C and the second metal nitride layer 1D.

[0037] 4 is a longitudinal cross-sectional view of the TMR element 30. As shown in Fig. 4, the TMR element 30 includes a substrate E1, electrode layers 12 and 13, a base layer 1, the laminated portion MS shown in Fig. 1, and a sidewall 10W disposed outside the laminated portion MS between the base layer 1 and the electrode layers 12 and 13. The sidewall 10W is made of SiO ２(silicon dioxide), SiNX (silicon nitride), Al ２ O ３ The TMR element is made of insulating materials such as aluminum oxide (Au), titanium oxide (TiO), tantalum oxide (TaOx), and aluminum silicate (AlSiO). The sidewalls 10W and other layers of the TMR element can be formed by sputtering. Chemical vapor deposition (CVD) can also be used to form the oxide and / or nitride and / or oxynitride layers of the TMR element.

[0038] In the TMR element 30 according to the present embodiment, the underlayer 1, 1x includes at least three layers (four layers in the basic embodiment of FIG. 2 and three layers in the modified example of FIG. 3 ), and therefore includes at least two interfaces between two layers made of different materials (three interfaces X1, X2, and X3 in the basic embodiment of FIG. 2 and two interfaces X2 and X4 in the modified example of FIG. 3 ). Therefore, when the underlayer 1 is formed, layers formed on these interfaces are more likely to crystallize. Therefore, the crystallinity and flatness of the second metal nitride layer 1D, which is the uppermost layer of the metal nitride layers in the underlayer 1, are improved compared to when the entire underlayer 1 is formed solely from the material constituting the second metal nitride layer 1D. This improves the crystallinity and flatness of the layers constituting the stacked portion MS (see FIG. 1 ) formed on such underlayer 1.

[0039] Furthermore, in the above-described embodiment, it is preferable that the metal nitride layer (first metal nitride layer 1B in FIG. 2 and third metal nitride layer 1A in FIG. 3) provided on the substrate E1 side of the metal oxynitride layer 1C be the thickest among the multiple layers constituting the underlayer 1, 1x. In this case, the positions of some interfaces (interfaces X2 and X3 in FIG. 2 and interfaces X2 and X4 in FIG. 3) of the underlayer 1, 1x are closer to the stacked portion MS (see FIG. 1). Therefore, the above-described effect of improving the crystallinity and flatness of the layers constituting the stacked portion MS due to the presence of interfaces X2, X3, and X4 can be more effectively exerted.

[0040] Furthermore, in the above-described embodiment, among the first metal nitride layer 1B, the second metal nitride layer 1D, and the third metal nitride layer 1A, it is preferable that the first metal nitride layer 1B, which is the metal nitride layer located at the middle in the thickness direction of the underlayer 1, be the thickest (see FIG. 2). In this case, the positions of the interfaces X2 and X3 of the underlayer 1 are close to the stacked portion MS (see FIG. 1). Therefore, the above-described effect of improving the crystallinity and flatness of the layers constituting the stacked portion MS due to the presence of the interfaces X2 and X3 can be more effectively exerted.

[0041] In the above-described embodiment, the third metal nitride layer 1A, which is the metal nitride layer closest to the substrate E1 among the plurality of metal nitride layers included in the underlayer 1, 1x, is preferably thicker than the metal oxynitride layer 1C (see FIGS. 2 and 3). In this case, the interfaces X1, X2, X3, and X4 of the underlayer 1, 1x are positioned closer to the stacked portion MS (see FIG. 1). Therefore, the above-described effect of improving the crystallinity and flatness of the layers constituting the stacked portion MS due to the presence of these interfaces is more effectively exhibited.

[0042] In the above-described embodiment, the thickness of the base layer 1, 1x is preferably 50 nm or more (see FIGS. 2 and 3). This particularly effectively improves the crystallinity and flatness of the layers constituting the laminate MS. The thickness of the base layer 1, 1x can be 100 nm or less.

[0043] 5 is a diagram showing a circuit diagram of the magnetic memory 100. As shown in FIG. 5, the magnetic memory 100 includes a plurality of TMR elements 30. The TMR elements 30 include the elements shown in FIGS. 1 to 3 above. The magnetic memory 100 is a spin transfer magnetization reversal MRAM (STT-MRAM).

[0044] The magnetic memory 100 includes a lower portion L, a middle portion M, and an upper portion U. The lower portion L includes a semiconductor substrate having a plurality of transistors Q1 (switches). The drains of the transistors Q1 are connected to the substrate E1 of the TMR element 30 through via electrodes VE. The sources of the transistors Q1 are connected to source lines SL. The source lines SL may be formed in the lower portion L or in the middle portion M. The gates of the transistors Q1 are connected to word lines WL.

[0045] The via electrodes VE and the word lines WL are formed in the intermediate portion M made of an insulating layer. ２ , SiNX or Al ２ O ３ The upper portion U is a portion located above the via electrode VE.

[0046] The electrode layers 12 and 13 of the TMR element 30 are connected to the bit line BL.

[0047] The potential of the word line WL turns on the transistor Q1, selecting the TMR element 30. The bit line BL or source line SL supplies a current to the selected TMR element 30. The STT-MRAM stores the magnetization direction of the magnetization free layer in response to the applied current. As described above, the magnetic memory 100 includes a TMR element 30 with high flatness and crystallinity of the layers that make up the element, and therefore has high reliability in terms of lifespan, etc.

[0048] When data is written to a memory cell of the magnetic memory 100, a selection voltage is applied to the word line WL corresponding to the TMR element 30 to be written. Then, with this TMR element 30 in the on state, a voltage is applied between the bit line BL and the source line SL so that a current of a polarity corresponding to the write data ("1" or "0") flows. The magnitude of the voltage applied at this time is set to a magnitude that can cause spin-transfer magnetization reversal in the magnetization free layer 8 of the TMR element 30. Therefore, the magnetization direction of the magnetization free layer 8 is set to a direction corresponding to the write data.

[0049] When data is read from a memory cell of the magnetic memory 100, a selection voltage is applied to the word line WL corresponding to the TMR element 30 to be read. Then, with this TMR element 30 set to the on state, a voltage smaller than the voltage used during writing is applied between the bit line BL and the source line SL. Therefore, a current of a magnitude corresponding to the data stored in the TMR element 30 flows between the bit line BL and the source line SL via the TMR element 30, and the current value can be detected to read the data.

[0050] The present invention is not limited to the above-described embodiment, and various modifications are possible.

[0051] For example, in the above-described embodiment, the metal constituting the second metal nitride layer 1D and the metal constituting the third metal nitride layer 1A were the same (see Figures 2 and 3), but these metals may be different from each other.

[0052] Although the magnetoresistive element in the above embodiment is a TMR element 30 (see FIG. 1), the magnetoresistive element of the present invention may be a giant magnetoresistive (GMR) element. In this case, a layer made of a nonmagnetic conductive material such as Ag or Cu is used in place of the tunnel barrier layer 7 in the multilayer portion MS.

[0053] The magnetoresistive element and magnetic memory of the present invention have the following configuration.

[0054] [1] A magnetoresistive element comprising: a substrate; an underlayer provided on the substrate; and a stacked portion provided on the underlayer, the stacked portion comprising a magnetization free layer, a reference layer, and a nonmagnetic layer provided between the magnetization free layer and the reference layer, wherein the underlayer comprises two or more metal nitride layers and a metal oxynitride layer provided between a first metal nitride layer and a second metal nitride layer of the two or more metal nitride layers. [2] The magnetoresistive element according to [1], wherein the metal constituting the first metal nitride layer is different from the metal constituting the second metal nitride layer. [3] The magnetoresistive element according to [1] or [2], further comprising a metal layer provided between the underlayer and the stacked portion. [4] The magnetoresistive element according to any of [1] to [3], wherein the reference layer comprises a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic insertion layer provided between the first ferromagnetic layer and the second ferromagnetic layer so as to exchange couple them. [5] The magnetoresistive element according to any one of [1] to [4], wherein the first metal nitride layer is provided on the substrate side of the metal oxynitride layer, the second metal nitride layer is provided on the stacked portion side of the metal oxynitride layer, and the first metal nitride layer is the thickest in the underlayer. [6] The magnetoresistive element according to any one of [1] to [5], wherein the underlayer further comprises a third metal nitride layer as the two or more metal nitride layers, and the metal nitride layer located intermediate in the thickness direction of the underlayer among the first metal nitride layer, the second metal nitride layer, and the third metal nitride layer is the thickest. [7] The magnetoresistive element according to any one of [1] to [6], wherein the metal nitride layer provided closest to the substrate among the two or more metal nitride layers is thicker than the metal oxynitride layer.

[0055] [8] The magnetoresistive effect element according to any one of [1] to [7], wherein the metal constituting the metal nitride layer closest to the stacking portion among the two or more metal nitride layers is the same as the metal constituting the metal nitride layer closest to the substrate among the two or more metal nitride layers.

[0056] [9] The magnetoresistive element according to any one of [1] to [8], wherein the thickness of the underlayer is 50 nm or more.

[0057]

[10] A magnetic memory comprising a plurality of magnetoresistive effect elements according to any one of [1] to [9].

[0058] 1...underlayer, 1A...third metal nitride layer, 1B...first metal nitride layer, 1C...metal oxynitride layer, 1D...second metal nitride layer, 1M...metal layer.

Claims

1. A magnetoresistive effect element comprising: a substrate; an underlayer provided on the substrate; and a laminate portion provided on the underlayer and comprising a magnetic free layer, a reference layer, and a non-magnetic layer provided between the magnetic free layer and the reference layer, wherein the underlayer comprises two or more metal nitride layers and a metal oxynitride layer provided between a first metal nitride layer and a second metal nitride layer among the two or more metal nitride layers.

2. The magnetoresistance effect element according to claim 1, wherein the metal constituting said first metal nitride layer is different from the metal constituting said second metal nitride layer.

3. The magnetoresistance effect element according to claim 2, further comprising a metal layer provided between said underlayer and said laminated portion.

4. The magnetoresistive element of claim 3, wherein the reference layer comprises a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic insertion layer provided therebetween so as to exchange couple the first ferromagnetic layer and the second ferromagnetic layer.

5. A magnetoresistive effect element as described in claim 4, wherein the first metal nitride layer is provided on the substrate side of the metal oxynitride layer, the second metal nitride layer is provided on the stacked portion side of the metal oxynitride layer, and the first metal nitride layer is the thickest in the underlayer.

6. The magnetoresistance effect element of claim 4, wherein the underlayer further comprises a third metal nitride layer as one of the two or more metal nitride layers, and the metal nitride layer located midway in the thickness direction of the underlayer is the thickest among the first metal nitride layer, the second metal nitride layer, and the third metal nitride layer.

7. The magnetoresistive element according to claim 5, wherein the metal nitride layer closest to the substrate out of said two or more metal nitride layers is thicker than said metal oxynitride layer.

8. A magnetoresistive effect element as described in claim 5, wherein the metal constituting the metal nitride layer closest to the stacked portion among said two or more metal nitride layers is the same as the metal constituting the metal nitride layer closest to the substrate among said two or more metal nitride layers.

9. The magnetoresistance effect element according to claim 6, wherein the thickness of said underlayer is 50 nm or more.

10. A magnetic memory comprising a plurality of magnetoresistance effect elements according to any one of claims 1 to 9.

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