Light-emitting device and image display device

Abstract

A light-emitting device according to an embodiment of the present disclosure is provided with: a plurality of light-emitting elements disposed along a first surface; a plurality of lenses which are respectively laminated, in a first direction crossing the first surface, at positions corresponding respectively to the plurality of light-emitting elements, and through which light from each of the plurality of light-emitting elements passes; and one or more light absorbers that are disposed, along the first surface, between the plurality of lenses and that absorb light.

Description

Light-emitting device and image display device

[0001] The present disclosure relates to a light-emitting device and an image display device including the same.

[0002] For example, Patent Document 1 discloses a light-emitting device and an image display device in which a silicon-based substrate is provided on both sides of a color conversion layer.

[0003] International Publication No. 2020 / 153191

[0004] Conventional micro LED display structures suffer from a reduction in contrast ratio due to interference from stray light and light leaking from other LEDs.

[0005] It is desirable to provide a light emitting device and an image display device that can suppress interference from stray light, leaked light, and the like.

[0006] A light emitting device according to one embodiment of the present disclosure comprises a plurality of light emitting elements arranged along a first surface, a plurality of lenses stacked in a first direction intersecting the first surface at positions corresponding to each of the plurality of light emitting elements and through which light from each of the plurality of light emitting elements passes, and one or more light absorbers arranged between the plurality of lenses along the first surface and which absorb light.

[0007] An image display device according to an embodiment of the present disclosure includes the light-emitting device according to the embodiment of the present disclosure.

[0008] In the light emitting device according to an embodiment of the present disclosure, a light absorber is provided between adjacent lenses arranged on the light emitting element, and therefore stray light, leaked light, and the like are absorbed by the light absorber.

[0009] FIG. 1 is a schematic diagram illustrating an example of a cross-sectional configuration of a light-emitting device according to an embodiment of the present disclosure. FIG. 2 is a schematic diagram illustrating an example of a planar configuration of the light-emitting device shown in FIG. 1. FIG. 3A is a schematic cross-sectional view illustrating an example of a manufacturing process for the light-emitting device shown in FIG. 1. FIG. 3B is a schematic cross-sectional view illustrating a process subsequent to FIG. 3A. FIG. 3C is a schematic cross-sectional view illustrating a process subsequent to FIG. 3B. FIG. 3D is a schematic cross-sectional view illustrating a process subsequent to FIG. 3C. FIG. 3E is a schematic cross-sectional view illustrating a process subsequent to FIG. 3D. FIG. 3F is a schematic cross-sectional view illustrating a process subsequent to FIG. 3E. FIG. 3G is a schematic cross-sectional view illustrating a process subsequent to FIG. 3F. FIG. 3H is a schematic cross-sectional view illustrating a process subsequent to FIG. 3G. FIG. 4 is a schematic cross-sectional view illustrating an example of a cross-sectional configuration of a light-emitting device according to Modification 1 of the present disclosure. FIG. 5 is a schematic cross-sectional view illustrating an example of a cross-sectional configuration of a light-emitting device according to Modification 2 of the present disclosure. FIG. 6 is a schematic cross-sectional view illustrating an example of a configuration of a light-emitting device according to Modification 3 of the present disclosure. FIG. 7 is a cross-sectional schematic diagram illustrating an example of the configuration of a light-emitting device according to Modification 4 of the present disclosure. FIG. 8 is a schematic diagram illustrating another example of the planar configuration of a light-emitting device according to Modification 5 of the present disclosure. FIG. 9 is a schematic diagram illustrating another example of the planar configuration of a light-emitting device according to Modification 6 of the present disclosure. FIG. 10A is a schematic diagram illustrating an example of the planar configuration of a light-emitting device according to Modification 7 of the present disclosure. FIG. 10B is a schematic diagram illustrating another example of the planar configuration of a light-emitting device according to Modification 7 of the present disclosure. FIG. 11A is a schematic diagram illustrating a first example of the cross-sectional configuration of a light-emitting device according to Modification 8 of the present disclosure. FIG. 11B is a schematic diagram illustrating a second example of the cross-sectional configuration of a light-emitting device according to Modification 8 of the present disclosure. FIG. 11C is a schematic diagram illustrating a third example of the cross-sectional configuration of a light-emitting device according to Modification 8 of the present disclosure. FIG. 12 is a schematic diagram illustrating another example of the cross-sectional configuration of a light-emitting device according to Modification 9 of the present disclosure. FIG. 13 is a schematic diagram illustrating an example of the cross-sectional configuration of a light-emitting device according to Modification 10 of the present disclosure. FIG. 14 is a schematic diagram illustrating an example of the cross-sectional configuration of a light-emitting device according to Modification 11 of the present disclosure. Fig. 15 is a cross-sectional view schematically illustrating an example of the configuration of a light-emitting device according to Modification 12 of the present disclosure. Fig. 16 is a cross-sectional view schematically illustrating an example of the configuration of a light-emitting device according to Modification 13 of the present disclosure. Fig. 17 is a cross-sectional view schematically illustrating an example of the configuration of a light-emitting device according to Modification 14 of the present disclosure. Fig. 18A is a schematic view illustrating another example of a method for manufacturing a light-emitting device according to Modification 15 of the present disclosure.Fig. 18B is a schematic diagram showing another example of a method for manufacturing a light emitting device according to Modification 15 of the present disclosure. Fig. 19A is a schematic diagram showing another example of a method for manufacturing a light emitting device according to Modification 16 of the present disclosure. Fig. 19B is a schematic diagram showing another example of a method for manufacturing a light emitting device according to Modification 16 of the present disclosure. Fig. 20 is a perspective view showing an example of a configuration of an image display device according to an application example of the present disclosure. Fig. 21 is a perspective view showing another example of a configuration of an image display device according to an application example of the present disclosure.

[0010] Hereinafter, an embodiment of the present disclosure will be described in detail with reference to the drawings. The following description is one specific example of the present disclosure, and the present disclosure is not limited to the following embodiment. Furthermore, the present disclosure is not limited to the arrangement, dimensions, dimensional ratios, etc. of each component shown in each drawing. The order of description is as follows: 1. One embodiment (example in which a light absorber is provided between lenses on a light-emitting element) 1-1. Configuration of light-emitting device 1-2. Method of manufacturing light-emitting device 1-3. Actions and effects 2. Modifications 2-1. Modification 1 (another example of a light-emitting device) 2-2. Modification 2 (another example of a light-emitting device) 2-3. Modification 3 (another example of a light-emitting device) 2-4. Modification 4 (another example of a light-emitting device) 2-5. Modification 5 (another example of a light-emitting device) 2-6. Modification 6 (another example of a light-emitting device) 2-7. Modification 7 (another example of a light-emitting device) 2-8. Modification 8 (another example of a light-emitting device) 2-9. 2. Modification 9 (Another example of a light emitting device) 2-10. Modification 10 (Another example of a light emitting device) 2-11. Modification 11 (Another example of a light emitting device) 2-12. Modification 12 (Another example of a light emitting device) 2-13. Modification 13 (Another example of a light emitting device) 2-14. Modification 14 (Another example of a light emitting device) 2-15. Modification 15 (Another example of a method for manufacturing a light emitting device) 2-16. Modification 16 (Another example of a method for manufacturing a light emitting device) 3. Application examples

[0011] 1. One embodiment Fig. 1 is a schematic diagram illustrating an example of a cross-sectional configuration of a portion of a light-emitting device 1 according to an embodiment of the present disclosure. Fig. 2 is a schematic diagram illustrating an example of a planar configuration of a portion of the light-emitting device 1. Note that Fig. 1 illustrates a cross section taken along line II shown in Fig. 2 as viewed from the arrow direction. The light-emitting device 1 is applicable, for example, to an image display device known as a head-mounted display (for example, a head-mounted display 100 shown in Fig. 20 described below).

[0012] (1-1. Configuration of the Light-Emitting Device) The light-emitting device 1 has a substrate 30, a plurality of light-emitting elements 10, a plurality of lenses 21, and one or more partition walls 22. An embedded layer 17 is provided between the substrate 30 and the plurality of light-emitting elements 10. A plurality of plug electrodes 16 and a plurality of plug electrodes 18 are provided in the embedded layer 17 corresponding to each of the plurality of light-emitting elements 10. The plurality of light-emitting elements 10 are provided on the substrate 30 extending along the XY plane. The plurality of light-emitting elements 10 are arranged adjacent to each other along the XY plane. Each of the plurality of lenses 21 is stacked at a position corresponding to each of the plurality of light-emitting elements 10 in the Z-axis direction intersecting the XY plane. In the light-emitting device 1, light from each of the plurality of light-emitting elements 10 passes through each of the plurality of lenses 21. For example, one support layer 15 is provided between the plurality of light-emitting elements 10 and the plurality of lenses 21 in the Z-axis direction.

[0013] The light-emitting element 10 corresponds to a specific example of a "light-emitting element" according to one aspect of the present disclosure. The lens 21 corresponds to a specific example of a "lens" according to one aspect of the present disclosure. The partition wall 22 corresponds to a specific example of a "light absorber" according to one aspect of the present disclosure.

[0014] The light emitting device 1 has at least one of the above components.

[0015] The light-emitting element 10 is a solid-state light-emitting element that emits light in a predetermined wavelength band from its top surface, such as an LED (Light Emitting Diode) chip. The LED chip refers to an element cut from a wafer used for crystal growth, and is not a packaged type covered with molded resin or the like. The LED chip has a size of, for example, 2 μm to 100 μm, and is known as a micro LED.

[0016] The light-emitting element 10 has a layered structure in which a first conductive type first compound semiconductor layer 11, an active layer 12, and a second conductive type second compound semiconductor layer 13 are layered in this order. In the light-emitting element 10, the upper surface of the second compound semiconductor layer 13 serves as a light extraction surface 10S1 of the light-emitting element 10. The light-emitting element 10 further has a first electrode 14 electrically connected to the first compound semiconductor layer 11. The first electrode 14 is electrically connected to the substrate 30 via a plug electrode 16. The light-emitting element 10 further has a support layer 15 on the opposite side of the second compound semiconductor layer 13 from the active layer 12.

[0017] Each of the plurality of light-emitting elements 10 has a mesa shape including a first compound semiconductor layer 11, an active layer 12, and a second compound semiconductor layer 13. The second compound semiconductor layer 13 is provided in common to the plurality of light-emitting elements 10.

[0018] The first compound semiconductor layer 11 is formed of, for example, a p-type GaN-based semiconductor material. In this case, the second compound semiconductor layer 13 is formed of, for example, an n-type GaN-based semiconductor material. The active layer 12 has, for example, a multiple quantum well structure in which InGaN and GaN are alternately stacked, and has a light-emitting region. Light in the blue band, for example, 430 nm to 500 nm, is extracted from the active layer 12. However, light with a wavelength corresponding to, for example, the ultraviolet region (ultraviolet light) may also be extracted from the active layer 12. The first compound semiconductor layer 11 may also be formed of, for example, an n-type AlGaInP-based semiconductor material. In this case, the second compound semiconductor layer 13 may also be formed of, for example, a p-type AlGaInP-based semiconductor material. The active layer 12 may have, for example, a multiple quantum well structure in which InGaP and AlGaInP are alternately stacked, and has a light-emitting region within the layer.

[0019] The first electrode 14 is in contact with the first compound semiconductor layer 11 and is electrically connected to the first compound semiconductor layer 11. That is, the first electrode 14 is in ohmic contact with the first compound semiconductor layer 11 and is formed using, for example, a multilayer film (Ni / Au) of nickel (Ni) and gold (Au) or a transparent conductive material such as ITO.

[0020] The support layer 15 is formed using a light-transmitting material, such as silicon oxide (SiO), silicon nitride (SiN), etc. The support layer 15 supports the plurality of light-emitting elements 10 in the manufacturing process described below.

[0021] The plug electrode 16 electrically connects the first electrode 14 and the substrate 30. The plug electrode 16 is made of, for example, tungsten (W). The plug electrode 16 is, for example, a P electrode, and one plug electrode 16 is provided for each light-emitting element 10.

[0022] The embedding layer 17 embeds the light emitting element 10 and forms a flat front surface and a flat back surface of the light emitting element 10. The embedding layer 17 is made of, for example, silicon oxide (SiO) or silicon nitride (SiN).

[0023] The plug electrode 18 electrically connects the second compound semiconductor layer 13 and the substrate 30. The plug electrode 18 is made of, for example, tungsten (W). The plug electrode 18 is, for example, an N-electrode, and one plug electrode 18 is provided for each light-emitting element 10.

[0024] The lens 21 is an optical element that transmits light emitted from the light-emitting element 10 corresponding to the lens 21 and exerts an optical effect on the light. The lens 21 has, for example, a convex surface 21S that protrudes in the direction away from the light-emitting element 10. The surface 21S may be spherical or aspherical. The lens 21 has, for example, positive refractive power and focuses light emitted from the light-emitting element 10 and incident on the lens 21 so that the light path is directed in the +Z direction, and emits the light from the surface 21S. In the light-emitting device 1, for example, one lens 21 is provided for one light-emitting element 10. However, multiple lenses 21 may be provided for one light-emitting element 10. The lens 21 is made of a light-transmitting material. Specifically, the lens 21 may be a single-layer film made of, for example, silicon oxide (SiO), silicon nitride (SiN), silicon oxynitride (SiON), or the like, or may be a laminated film in which multiple films made of one or more of silicon oxide (SiO), silicon nitride (SiN), and silicon oxynitride (SiON) are stacked. Alternatively, the lens 21 may be made of a resin material. The multiple lenses 21 are arranged so that the intervals between adjacent lenses 21 are equal, for example, as shown in FIG. 2 .

[0025] The partitions 22 are provided along the XY plane between the lenses 21 and spaced apart from each other. The partitions 22 are formed of a light-absorbing material. The partitions 22 are provided so as to surround at least a portion of at least one lens 21 and absorb stray light, leaked light, and the like. Specifically, the partitions 22 are made of, for example, silicon (Si). The width of the partitions 22 on the surface facing the light extraction surface 10S1 of the light-emitting element 10 can be, for example, 0.1 μm or more and less than 300 μm, more preferably 0.3 μm or more and less than 100 μm. The height of the partitions 22 can be, for example, 0.2 μm or more and less than 100 μm, more preferably 0.5 μm or more and less than 50 μm.

[0026] The partition 22 includes a plurality of pixel regions P surrounding at least a portion of at least one lens 21. As shown in FIG. 2 , for example, the partition 22 has a plurality of pixel regions P surrounding one of the plurality of lenses 21 in a substantially regular hexagonal shape. That is, the plurality of lenses 21 are arranged in a honeycomb pattern. The center of the pixel region P overlaps with the center of the mesa shape of the light-emitting element 10 in the Z-axis direction, for example.

[0027] The substrate 30 is electrically connected to the first electrode 14 of the light-emitting element 10 via the plug electrode 16. The substrate 30 is formed using, for example, silicon (Si) or silicon oxide (SiO). A first wiring 31 and a second wiring 32 are embedded in the substrate 30. The first wiring 31 is connected to the plug electrode 16. The second wiring 32 is connected to the plug electrode 18. A contact electrode may further be provided between the plug electrode 18 and the second compound semiconductor layer 13. The first wiring 31 and the second wiring 32 are formed using, for example, copper (Cu).

[0028] (1-2. Method for Manufacturing Light-Emitting Device) The light-emitting device 1 of this embodiment can be manufactured, for example, as follows: Figures 3A to 3H show an example of a manufacturing process for the light-emitting device 1.

[0029] First, as shown in FIG. 3A , an epitaxial substrate EP is prepared, and then a second compound semiconductor layer 13, an active layer 12, and a first compound semiconductor layer 11 are sequentially stacked on the epitaxial substrate EP. The second compound semiconductor layer 13, the active layer 12, and the first compound semiconductor layer 11 can be formed by growing them on the epitaxial substrate EP using, for example, metalorganic chemical vapor deposition (MOCVD). Next, a conductive film, for example, is formed on the first compound semiconductor layer 11 by, for example, vapor deposition, and then the conductive film is selectively removed by lift-off. This forms a first electrode 14 having a predetermined planar shape.

[0030] Next, a bonding film BF is formed on the first electrode 14. The bonding film BF is formed by, for example, chemical vapor deposition (CVD), evaporation, or sputtering. Thereafter, a temporary substrate Z is bonded to the surface of the bonding film BF opposite to the epitaxial substrate EP as viewed from the bonding film BF.

[0031] Next, as shown in FIG. 3B , the epitaxial substrate EP is removed. For example, if the epitaxial substrate EP is made of silicon (Si) or silicon carbide (SiC), the epitaxial substrate EP can be removed by mechanical grinding, wet etching, or the like. Furthermore, if the epitaxial substrate EP is a sapphire substrate, the epitaxial substrate EP can be removed by laser lift-off. Removal of the epitaxial substrate EP exposes the surface of the second compound semiconductor layer 13 opposite the active layer 12.

[0032] 3C , a temporary substrate Z22 is prepared and then bonded to the surface of the second compound semiconductor layer 13 opposite the active layer 12 via a support layer 15. The support layer 15 is formed by, for example, chemical vapor deposition (CVD), evaporation, or sputtering. After bonding the temporary substrate Z22, the bonding film BF on the first electrode 14 and the temporary substrate Z are removed.

[0033] 3D , the first compound semiconductor layer 11, the active layer 12, and the second compound semiconductor layer 13 are selectively removed by, for example, dry etching so as to dig down in predetermined regions, thereby forming a plurality of recesses U. At this time, in the predetermined regions where the recesses U are to be formed, a portion of the second compound semiconductor layer 13 remains in the thickness direction (Z-axis direction).

[0034] Next, a copper (Cu) film is selectively formed at a predetermined position on the first electrode 14 or the exposed second compound semiconductor layer 13 by evaporation, PVD, plating, or the like. Thereafter, the surface of the copper film is polished using, for example, CMP, to form plug electrodes 16 and 18, as shown in FIG. 3E . At this time, a contact electrode may be provided between the second compound semiconductor layer 13 and the plug electrode 18. After the plug electrodes 16 and 18 are formed, a buried layer 17 is formed over the entire surface of the light-emitting element 10. The buried layer 17 can be obtained, for example, by forming a film of an insulating material so as to embed the entire surface of the light-emitting element 10, and then planarizing the film by CMP (Chemical Mechanical Polishing).

[0035] 3F, the buried layer 17 is bonded to the substrate 30. When bonding the buried layer 17 to the substrate 30, for example, Cu--Cu bonding is used.

[0036] Next, as shown in FIG. 3G, a portion of the temporary substrate Z22 is selectively removed to form the partition wall 22. At this time, portions of the temporary substrate Z22 provided in regions corresponding to the active layers 12 of the plurality of light-emitting elements 10 are removed. The temporary substrate Z22 can be removed by mechanical grinding, CMP (Chemical Mechanical Polishing), wet etching, dry etching, or the like. Thereafter, as shown in FIG. 3H, a lens 21 is provided in the space surrounded by the partition wall 22. In this manner, the light-emitting device 1 shown in FIG. 1 is completed.

[0037] (1-3. Actions and Effects) In the light-emitting device 1 of the present embodiment, light generated in each of the plurality of light-emitting elements 10 is emitted from the light extraction surface 10S1 and then incident on the lens 21 corresponding to each of the light-emitting elements 10. The light incident on each of the plurality of lenses 21 is subjected to optical effects in each lens 21 and then emitted from the surface 21S of each lens 21. At this time, there is a possibility that light emitted from a certain light-emitting element 10 will leak light and unintentionally enter the lens 21 corresponding to an adjacent light-emitting element 10. There is also a possibility that light emitted from the lens 21 will reflect off an object provided outside the light-emitting device 1 and enter the light-emitting element 10 as stray light. Therefore, in the light-emitting device 1 of the present embodiment, a light-absorbing partition 22 is provided to surround the lens 21 arranged on the light-emitting element 10. This allows the partition 22 to absorb the above-mentioned stray light, leak light, and the like.

[0038] As a result, in the light emitting device 1 of the present embodiment, it is possible to suppress the influence of optical interference due to stray light, leaked light, etc. that the light emitting element 10 receives, and improve the contrast ratio.

[0039] Furthermore, in the method for manufacturing the light emitting device 1 of this embodiment, a part of the temporary substrate 22A is removed and used as the partition wall 22, which makes it possible to reduce the number of manufacturing steps.

[0040] As described above, by applying the light emitting device 1 of the present embodiment to an image display device, it becomes possible to display an image with a high contrast ratio.

[0041] Furthermore, in the light-emitting device 1 of this embodiment, as described above, the partition walls 22 are provided along the XY plane between the plurality of lenses 21 and spaced apart from each of the plurality of lenses 21. This increases the degree of freedom in the position of the lenses 21 relative to the positions of the mesa-shaped portions of the plurality of light-emitting elements 10 compared to when the lenses 21 and the partition walls 22 are in contact with each other. Therefore, the light-emitting device 1 can control the angle of the light beam. By applying the light-emitting device 1 of this embodiment to an image display device, for example, it is possible to prevent the outer periphery of the display from becoming dark.

[0042] Next, modifications 1 to 16 and application examples of the present disclosure will be described. Note that components corresponding to those of the light emitting device 1 of the above embodiment will be assigned the same reference numerals and descriptions thereof will be omitted.

[0043] 2. Modifications (2-1. Modification 1) FIG. 4 is a schematic diagram showing an example of the cross-sectional configuration of a light emitting device (light emitting device 1A) according to Modification 1 of the present disclosure.

[0044] In the light emitting device 1A, an embedding layer 23A is further provided so as to fill the gap between the lens 21 and the partition wall 22. Except for this, the configuration of the light emitting device 2 is substantially the same as the configuration of the light emitting device 1 of the above embodiment.

[0045] The buried layer 23A corresponds to a specific example of a "buried layer" according to one aspect of the present disclosure.

[0046] The embedded layer 23A can compensate for the refractive power of the lens 21, for example. Specifically, by forming the embedded layer 23A from a material having a refractive index lower than that of the lens 21, the light emitted from the light-emitting element 10 can be refracted in the +Z direction when it is emitted from the surface 21S of the lens 21. Therefore, in the light-emitting device 2 of Modification 1, even if the lens 21 is thin and has a relatively weak refractive power, by further providing the embedded layer 23A, it is possible to ensure the same refractive power as, for example, the lens 21 of the light-emitting device 1 of the above embodiment. Furthermore, by providing the embedded layer 23A, the lens 21 can be protected from the external environment.

[0047] The embedded layer 23A is formed using a light-transmitting material. Specifically, the embedded layer 23A may be formed using, for example, silicon oxide (SiO), silicon nitride (SiN), silicon oxynitride (SiON), or the like. Alternatively, the embedded layer 23A may be formed using a resin material.

[0048] (2-2. Modification 2) FIG. 5 is a schematic diagram showing an example of the cross-sectional configuration of a light emitting device (light emitting device 1B) according to Modification 2 of the present disclosure.

[0049] In the light emitting device 1B, an embedded layer 23B is further provided so as to fill the gap between the lens 21 and the partition wall 22. Except for this point, the configuration of the light emitting device 1B is substantially the same as the configuration of the light emitting device 1 of the above embodiment.

[0050] The buried layer 23B corresponds to a specific but not limitative example of a "buried layer" according to one aspect of the present disclosure.

[0051] The embedded layer 23B contains a color conversion material that converts the light emitted from the light emitting element 10 into a desired wavelength (e.g., red (R) / green (G) / blue (B)) and emits the converted wavelength. The converted wavelength may be different for each light emitting element 10.

[0052] The burying layer 23B may be formed using quantum dots corresponding to each color. Specifically, when red light is obtained, the quantum dots may be selected from, for example, InP, GaInP, InAsP, CdSe, CdZnSe, CdTeSe, or CdTe. When green light is obtained, the quantum dots may be selected from, for example, InP, GaInP, ZnSeTe, ZnTe, CdSe, CdZnSe, CdS, or CdSeS. When blue light is obtained, the quantum dots may be selected from, for example, ZnSe, ZnTe, ZnSeTe, CdSe, CdZnSe, CdS, CdZnS, or CdSeS. Alternatively, the burying layer 23B may be formed using an inorganic phosphor, an organic phosphor, or nanoparticles such as quantum rods.

[0053] (2-3. Modification 3) FIG. 6 is a schematic diagram showing an example of the cross-sectional configuration of a light emitting device (light emitting device 1C) according to Modification 3 of the present disclosure.

[0054] In the light emitting device 1C, the partition wall 22 has a base 221 and a coating 222 that covers the base 221. Except for this point, the configuration of the light emitting device 4 is substantially the same as the configuration of the light emitting device 1 of the above embodiment.

[0055] The base 221 is made of a light-absorbing material. Specifically, the base 221 is made of, for example, single-crystal silicon (Si), polycrystalline silicon, or asmorphous silicon. The width of the base 221 is equal to or greater than 0.1 μm and less than 100 μm.

[0056] The coating 222 is formed of a material having light absorption properties. Specifically, the coating 222 is formed using, for example, carbon (C), polycrystalline silicon, and asmorphous silicon. The coating 222 may be formed of a material having lower light reflectivity than the lens 21. Specifically, the coating 222 may be formed of, for example, silicon oxide (SiO), silicon nitride (SiN), silicon oxynitride (SiON), or the like.

[0057] (2-4. Modification 4) FIG. 7 is a schematic diagram showing an example of the cross-sectional configuration of a light emitting device (light emitting device 1D) according to Modification 4 of the present disclosure.

[0058] In the light emitting device 1D, a connection electrode layer 24 is further provided between the second compound semiconductor layer 13 and the partition wall 22 instead of the support layer 15. In the light emitting device 1D, the light emitting element 10 is electrically connected to the partition wall 22 via the connection electrode layer 24. Except for these points, the configuration of the light emitting device 1D is substantially the same as the configuration of the light emitting device 1 of the above embodiment.

[0059] The connection electrode layer 24 corresponds to a specific example of an "electrode layer" according to one aspect of the present disclosure.

[0060] The connection electrode layer 24 is formed of a transparent electrode material such as ITO, indium zinc oxide (IZO), zinc oxide (ZnO), tin oxide (SnO), or TiO.

[0061] (2-5. Modification 5) Fig. 8 is a schematic diagram showing another example of the planar configuration of a light emitting device according to Modification 5 of the present disclosure (light emitting device 1E). Light emitting device 1E has partition wall 22E instead of partition wall 22. Except for the above points, the configuration of light emitting device 1E is substantially the same as the configuration of light emitting device 1 of the above embodiment.

[0062] In the light-emitting device 1E, the partition wall 22E is composed of a plurality of portions 221E that are spaced apart from one another. At least a portion of each of the plurality of lenses 21 is surrounded by the plurality of portions 221E. In other words, the plurality of portions 221E are discretely arranged around each lens 21.

[0063] In the light emitting device 1E, the multiple portions 221E provided around each lens 21 are spaced apart from one another, so the amount of light emitted from each light emitting element 10 absorbed by the partitions 22E can be reduced compared to the light emitting device 1. In other words, the light emitting efficiency of each light emitting element 10 can be improved. On the other hand, by providing the partitions 22E, stray light that mainly enters from an oblique direction, i.e., unwanted light, can be effectively absorbed. This is for the following reason.

[0064] The greater the distance between the light-emitting elements 10, the more likely stray light incident from an oblique direction is to be incident on adjacent light-emitting elements 10. In the light-emitting device 1E, the partition 22E is composed of multiple portions 221E spaced apart from each other, so that the multiple portions 221E of the partition 22E can be selectively arranged. For example, the partition 22E can be provided at a position where the distance between adjacent light-emitting elements 10 is relatively long, avoiding a position where the distance between adjacent light-emitting elements 10 is shortest. This allows the light-emitting device 1E to efficiently absorb stray light incident from an oblique direction while reducing the amount of light emitted from each light-emitting element 10 absorbed by the partition 22E.

[0065] (2-6. Modification 6) Fig. 9 is a schematic diagram showing another example of the planar configuration of a light emitting device according to Modification 6 of the present disclosure (light emitting device 1F). Light emitting device 1F has partition wall 22F instead of partition wall 22. Except for the above points, the configuration of light emitting device 1F is substantially the same as the configuration of light emitting device 1 of the above embodiment.

[0066] The partition 22F has a cylindrical cavity V22F along the outer edge of the lens 21. As shown in Fig. 9, the width of the partition 22F may be partially increased.

[0067] 10A and 10B are schematic diagrams illustrating another example of the planar configuration of a light-emitting device according to Modification 7 of the present disclosure (light-emitting device 1G). Light-emitting device 1G has partition walls 22G instead of partition walls 22. Furthermore, light-emitting device 1G has a plurality of lenses 21 arranged in a matrix so as to line up in both the X-axis direction and the Y-axis direction.

[0068] The partitions 22G are provided in a lattice pattern such that a plurality of portions extending in the X-axis direction and a plurality of portions extending in the Y-axis direction intersect with each other. As shown in Fig. 10 , in the light-emitting device 1G, a plurality of lenses 21 are arranged in the dice-shaped cavities of the partitions 22G.

[0069] In the light emitting device 1G, as shown in FIG. 10B, the center of the pixel region P and the center of the lens 21 do not have to overlap in the Z-axis direction. That is, the offset amount may be adjusted for each pixel region P. For example, when the nine pixel regions P in FIG. 10B are regarded as one screen display area, the centers of the multiple lenses 21 may be shifted so as to approach the center of the screen display area. This makes it possible to improve the brightness at the center of the screen display area. Except for the above points, the configuration of the light emitting device 1G is substantially the same as the configuration of the light emitting device 1 of the above embodiment.

[0070] (2-8. Modification 8) FIGS. 11A to 11C are schematic diagrams respectively showing first to third examples (light-emitting device 1H) of the cross-sectional configuration of a light-emitting device according to Modification 8 of the present disclosure. Light-emitting device 1H includes partition walls 22H instead of partition walls 22. Except for the above-described points, the configuration of light-emitting device 1H is substantially the same as the configuration of light-emitting device 1 of the above-described embodiment. Partition walls 22H have at least a portion of wall surfaces 22HS inclined at an angle of 45° to 135° with respect to the XY plane, for example. That is, as shown in FIG. 11A, partition walls 22H may have at least a portion of wall surfaces 22HS1 with a forward taper angle inclined at an angle of 45° to 90° with respect to the XY plane. Furthermore, partition walls 22H may have at least a portion of wall surfaces 22HS2 with a reverse taper angle inclined at an angle of 90° to 135° with respect to the XY plane, for example, as shown in FIG. 11B. Furthermore, the partition wall 22H may have at least a portion of a wall surface 22HS3 that includes a nonlinear shape in the Z-axis direction, as shown in FIG. 11C, for example.

[0071] 12 is a schematic diagram showing an example of a cross-sectional configuration of a light-emitting device according to Modification 9 of the present disclosure (light-emitting device 1I). In the light-emitting device 1 of the above embodiment, each of the plug electrodes 18 provided for each light-emitting element 10 is directly connected to second wiring 32 provided on the substrate 30. In contrast, in the light-emitting device 1I, each of the plug electrodes 18 is connected to each of the multiple wiring layers 18W formed in the embedded layer 17, and is connected to second wiring 32 via a single pad 18P provided in common to the multiple wiring layers 18W.

[0072] (2-10. Modification 10) FIG. 13 is a schematic diagram illustrating an example of a cross-sectional configuration of a light-emitting device (light-emitting device 1J) according to Modification 10 of the present disclosure. In the light-emitting device 1 of the above embodiment, a portion of the first compound semiconductor layer 11 is provided continuously between the plurality of light-emitting elements 10. In contrast, in the light-emitting device 1J, each of the plurality of light-emitting elements 10 has a mesa shape including the entire first compound semiconductor layer 11, the active layer 12, and the second compound semiconductor layer 13. In the light-emitting device 1J, a connection electrode layer 24 is further provided between the second compound semiconductor layer 13 and the partition wall 22, instead of the support layer 15. In the light-emitting device 1J, the light-emitting elements 10 are electrically connected to the partition wall 22 via the connection electrode layer 24. Except for these points, the configuration of the light-emitting device 1J is substantially the same as the configuration of the light-emitting device 1 of the above embodiment.

[0073] The connection electrode layer 24 corresponds to a specific example of an "electrode layer" according to one aspect of the present disclosure.

[0074] The connection electrode layer 24 is formed of a transparent electrode material such as ITO, indium zinc oxide (IZO), zinc oxide (ZnO), tin oxide (SnO), or TiO.

[0075] (2-11. Modification 11) FIG. 14 is a schematic diagram showing an example of the cross-sectional configuration of a light emitting device (light emitting device 1K) according to Modification 11 of the present disclosure.

[0076] In the light emitting device 1K, a wavelength conversion layer 25 is further provided between the lens 21 and the support layer 15. Except for this point, the configuration of the light emitting device 1K is substantially the same as the configuration of the light emitting device 1 of the above embodiment.

[0077] The wavelength conversion layer 25 contains a color conversion material that converts the light emitted from the light emitting element 10 into a desired wavelength (e.g., red (R) / green (G) / blue (B)) and emits the converted wavelength. The converted wavelength may be different for each light emitting element 10.

[0078] The wavelength conversion layer 25 may be formed using quantum dots corresponding to each color. Specifically, when red light is obtained, the quantum dots may be selected from, for example, InP, GaInP, InAsP, CdSe, CdZnSe, CdTeSe, or CdTe. When green light is obtained, the quantum dots may be selected from, for example, InP, GaInP, ZnSeTe, ZnTe, CdSe, CdZnSe, CdS, or CdSeS. When blue light is obtained, the quantum dots may be selected from, for example, ZnSe, ZnTe, ZnSeTe, CdSe, CdZnSe, CdS, CdZnS, or CdSeS. Alternatively, the wavelength conversion layer 25 may be formed using inorganic phosphors, organic phosphors, or nanoparticles such as quantum rods.

[0079] 15 is a schematic diagram showing an example of a cross-sectional configuration of a light-emitting device (light-emitting device 1L) according to Modification 12 of the present disclosure. In the light-emitting device 1 of the above embodiment, the partitions 22 are provided between the plurality of lenses 21 along the XY plane and spaced apart from each of the plurality of lenses 21. In contrast, in the light-emitting device 1L, the lenses 21L and the partitions 22 are provided in contact with each other.

[0080] (2-13. Modification 13) FIG. 16 is a schematic diagram showing an example of the cross-sectional configuration of a light-emitting device (light-emitting device 1M) according to Modification 13 of the present disclosure. In light-emitting device 1M, a lens 21M is provided instead of lens 21 having a convex shape protruding in the direction opposite to light-emitting element 10. Lens 21M may be, for example, polygonal. Lens 21M may be, for example, octagonal, as shown in FIG. 16. Lens 21M may have, for example, a concave surface protruding in the same direction as light-emitting element 10. Furthermore, lens 21M may be, for example, a Fresnel lens or a metalens. Except for the above points, the configuration of light-emitting device 1M is substantially the same as the configuration of light-emitting device 1 of the above embodiment.

[0081] (2-14. Modification 14) Fig. 17 is a schematic diagram showing another example of the cross-sectional configuration of a light-emitting device according to Modification 14 of the present disclosure (light-emitting device 1N). In light-emitting device 1N, an electrode layer 26 is provided on the surface of light-emitting element 10 opposite to the surface facing substrate 30. Electrode layer 26 is, for example, an N-electrode. Except for the above points, the configuration of light-emitting device 1M is substantially the same as the configuration of light-emitting device 1 of the above embodiment.

[0082] (2-15. Modification 15) FIGS. 18A and 18B are schematic diagrams illustrating another example of a manufacturing process for a light-emitting device according to Modification 14 of the present disclosure (a manufacturing method for a light-emitting device 1O). In the manufacturing process for the light-emitting device 1O, a temporary substrate Z22O having a plurality of recesses Z22U at positions corresponding to the positions where the plurality of lenses 21 are to be provided is used instead of the approximately plate-shaped temporary substrate Z22. The recesses Z22U are filled with a buried layer Z221. The buried layer Z221 is formed of, for example, silicon oxide (SiO) or silicon nitride (SiN). After bonding the temporary substrate Z22O, the bonding film BF on the first electrode 14 and the temporary substrate Z are removed.

[0083] The subsequent steps are the same as those for the light emitting device 1 of this embodiment up to the stage where the substrate 30 is bonded to the embedding layer 17 .

[0084] Next, as shown in FIG. 18B, the substrate 30 is inverted so that it faces downward, and then a portion of the temporary substrate Z22O and the embedded layer Z221 are selectively removed. This results in the partition walls 22, as shown in FIG. 3G. At this time, portions of the temporary substrate Z22O provided in regions corresponding to the active layers 12 of the plurality of light-emitting elements 10 are removed. The temporary substrate Z22O can be removed by mechanical grinding, CMP (Chemical Mechanical Polishing), wet etching, dry etching, or the like. Thereafter, a lens 21 is provided in the space surrounded by the partition walls 22, similar to the manufacturing method of the light-emitting device 1. Except for the above points, the manufacturing method of the light-emitting device 1O is substantially the same as the manufacturing method of the light-emitting device 1 of the above embodiment.

[0085] (2-16. Modification 16) FIGS. 19A and 19B are schematic diagrams illustrating another example of a manufacturing process for a light-emitting device according to Modification 14 of the present disclosure (a manufacturing method for a light-emitting device 1P). In the manufacturing process for the light-emitting device 1P, instead of the generally plate-shaped temporary substrate Z22, a temporary substrate Z22P having a plurality of recesses Z22U at positions corresponding to the positions where the plurality of lenses 21 are to be provided is used. The recesses Z22U are filled with an embedding layer Z221, and the lenses 21 are embedded in the embedding layer Z221. At this time, the lenses 21 are bonded to the support layer 15. The embedding layer Z221 is formed, for example, of silicon oxide (SiO) or silicon nitride (SiN). After bonding the temporary substrate Z22P, the bonding film BF on the first electrode 14 and the temporary substrate Z are removed.

[0086] The subsequent steps are the same as those for the light emitting device 1 of this embodiment up to the stage where the substrate 30 is bonded to the embedding layer 17 .

[0087] Next, as shown in FIG. 19B, the substrate 30 is inverted so that it faces downward, and then a portion of the temporary substrate Z22P and the embedded layer Z221 are selectively removed. As a result, as shown in FIG. 3G, the partition walls 22 are obtained and the lenses 21 are exposed. At this time, portions of the temporary substrate Z22P provided in regions corresponding to the active layers 12 of the plurality of light-emitting elements 10 are removed. Removal of the temporary substrate Z22P can be performed by mechanical grinding, CMP (Chemical Mechanical Polishing), wet etching, dry etching, or the like. Then, the lenses 21 are provided in the space surrounded by the partition walls 22 in the same manner as in the manufacturing method of the light-emitting device 1. Except for the above points, the manufacturing method of the light-emitting device 1P is substantially the same as the manufacturing method of the light-emitting device 1 of the above embodiment.

[0088] 20 is a perspective view showing an example of the appearance of an image display device (head-mounted display 100) using a light-emitting device (e.g., light-emitting device 1) according to the present disclosure. The head-mounted display 100 has, for example, a glasses-shaped display unit 121 and ear hooks 122 on both sides of the glasses-shaped display unit 121 for wearing on the user's head. The light-emitting device (e.g., light-emitting device 1) according to the present disclosure can be used for the display unit 121.

[0089] (Application Example 2) FIG. 21 is a perspective view illustrating another example (head-mounted display 200) of the appearance of an image display device using a light-emitting device (e.g., light-emitting device 1) according to the present disclosure. The head-mounted display 200 is a so-called see-through head-mounted display and includes a main body 221, an arm 222, and a lens barrel 223. The head-mounted display 200 is attached to, for example, eyeglasses 224. The main body 221 includes a control board and a display unit for controlling the operation of the head-mounted display 200. The display unit emits image light of a display image, and may include a light-emitting device (e.g., light-emitting device 1) according to the present disclosure. The arm 222 connects the main body 221 and the lens barrel 223 and supports the lens barrel 223. The lens barrel 223 projects the image light supplied from the main body 221 via the arm 222 toward the user's eyes via lenses 225 of the eyeglasses 224.

[0090] The present disclosure has been described above with reference to the embodiments, Modifications 1 to 16, and application examples, but the present disclosure is not limited to the above embodiments, etc., and various modifications are possible. For example, in the above embodiments, etc., examples have been shown in which the light emitted from the light-emitting element 10 is blue light or ultraviolet light, but the present disclosure is not limited to this. For example, the light-emitting device 1 may also use a light-emitting element that emits two or more types of light, such as blue light and green light, or ultraviolet light and green light.

[0091] Furthermore, in the above-described embodiments, each component constituting the light emitting device 1 etc. has been specifically listed and described, but it is not necessary to include all components, and other components may also be included.

[0092] Furthermore, the above modifications 1 to 16 can be combined with each other in any way.

[0093] The effects described in this specification are merely examples and are not limited to those described, and other effects may also be obtained.

[0094] The present disclosure may also be configured as follows: (1) A light-emitting device comprising: a plurality of light-emitting elements arranged along a first surface; a plurality of lenses stacked in a first direction intersecting the first surface at positions corresponding to each of the plurality of light-emitting elements, through which light from each of the plurality of light-emitting elements passes; and one or more light absorbers arranged along the first surface between the plurality of lenses and absorbing light. (2) The light-emitting device according to (1), wherein the one or more light absorbers are arranged spaced apart from each of the plurality of lenses. (3) The light-emitting device according to (1) or (2), wherein the one or more light absorbers surround at least a portion of at least one of the plurality of lenses. (4) The light-emitting device according to any one of (1) to (3), further comprising a substrate on which the plurality of light-emitting elements are arranged, the substrate being electrically connected to each of the plurality of light-emitting elements. (5) The light-emitting device according to (4), wherein the substrate and the light absorber each contain Si (silicon). (6) The light-emitting device according to any one of (1) to (5), wherein the light absorber has a base and a coating covering the base. (7) The light-emitting device according to (6), wherein the coating contains at least one of SiO, SiN, SiON, and carbon. (8) The light-emitting device according to any one of (1) to (7), wherein each of the plurality of light-emitting elements has a stacked structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are stacked in this order. (9) The light-emitting device according to any one of (1) to (8), wherein the light absorber has a wall surface inclined at an angle of 45° to 135° with respect to the first surface. (10) The light-emitting device according to any one of (1) to (9), wherein the width of the light absorber is 0.1 μm or more and less than 100 μm. (11) The light emitting device according to any one of (1) to (10), wherein each of the plurality of lenses is formed using at least one of SiO, SiN, SiON, and resin.(12) The light-emitting device according to any one of (1) to (11), further comprising an embedding layer, wherein the embedding layer is embedded between each of the plurality of lenses and the light absorber. (13) The light-emitting device according to (12), wherein the embedding layer is optically transparent and has a refractive index lower than that of each of the plurality of lenses. (14) The light-emitting device according to (13), wherein the embedding layer contains at least one of SiO, SiN, SiON, and a resin. (15) The light-emitting device according to (13) or (14), wherein the embedding layer contains a color conversion material. (16) The light-emitting device according to any one of (1) to (15), further comprising an electrode layer, wherein the electrode layer is provided between each of the plurality of light-emitting elements and the light absorber. (17) The light-emitting device according to any one of (1) to (16), wherein the height of the light absorber is equal to or greater than 0.2 μm and less than 100 μm. (18) The light-emitting device according to any one of (1) to (17), wherein a height of the light absorber is greater than a height of each of the plurality of lenses. (19) The light-emitting device according to any one of (1) to (18), wherein the plurality of lenses include a first lens, wherein the one or more light absorbers have a first light absorber and a second light absorber provided along the first surface with the first lens therebetween, and wherein a distance between the first lens and the first light absorber is different from a distance between the first lens and the second light absorber. (20) The light-emitting device according to any one of (1) to (19), wherein a center position on the first surface of at least one of the plurality of lenses is different from a center position on the first surface of the light-emitting element corresponding to the one lens. (21) A method for manufacturing a light-emitting device, comprising: forming a plurality of recesses in a temporary substrate; forming lenses in the temporary substrate at positions corresponding to each of the plurality of recesses; bonding the temporary substrate to a plurality of light-emitting elements arranged along a first surface; and cutting the temporary substrate to form one or more light absorbers that absorb light and are spaced apart from each of the plurality of lenses.(22) An image display device comprising a light emitting device, the light emitting device having: a plurality of light emitting elements arranged along a first surface; a plurality of lenses stacked in a first direction intersecting the first surface at positions corresponding to each of the plurality of light emitting elements, through which light from each of the plurality of light emitting elements passes; and one or more light absorbers arranged along the first surface between the plurality of lenses and spaced apart from each of the plurality of lenses, for absorbing light.

[0095] This application claims priority based on Japanese Patent Application No. 2023-169385, filed on September 29, 2023, in the Japan Patent Office, the entire contents of which are incorporated herein by reference.

[0096] Those skilled in the art will recognize that various modifications, combinations, subcombinations, and variations may occur depending on design requirements and other factors, and are intended to be within the scope of the appended claims and their equivalents.

Claims

1. A light emitting device comprising: a plurality of light emitting elements arranged along a first surface; a plurality of lenses stacked in a first direction intersecting said first surface at positions corresponding to each of said plurality of light emitting elements, through which light from each of said plurality of light emitting elements passes; and one or more light absorbers disposed between said plurality of lenses along said first surface and absorbing light.

2. The light emitting device according to claim 1, wherein the one or more light absorbers are provided spaced apart from each of the plurality of lenses.

3. The light emitting device according to claim 1, wherein the one or more light absorbers surround at least a portion of at least one of the plurality of lenses.

4. The light emitting device according to claim 1, further comprising a substrate on which the plurality of light emitting elements are provided, the substrate being electrically connected to each of the plurality of light emitting elements.

5. The light emitting device according to claim 4, wherein the substrate and the light absorber each contain Si (silicon).

6. The light emitting device according to claim 1, wherein the light absorber comprises a base and a coating covering the base.

7. The light emitting device according to claim 6, wherein the coating includes at least one of SiO, SiN, SiON and carbon.

8. The light emitting device according to claim 1, wherein each of the plurality of light emitting elements includes a laminated structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are laminated in that order.

9. The light emitting device according to claim 1, wherein the light absorber has a wall surface that is inclined at an angle of 45° or more and 135° or less with respect to the first surface.

10. The light emitting device according to claim 1, wherein the width of the light absorber is equal to or greater than 0.1 μm and less than 100 μm.

11. The light emitting device according to claim 1, wherein each of the plurality of lenses is formed using at least one of SiO, SiN, SiON and resin.

12. The light emitting device according to claim 1, further comprising an embedding layer, the embedding layer being embedded between each of the plurality of lenses and the light absorber.

13. The light emitting device according to claim 12, wherein the embedding layer is optically transparent, and the embedding layer has a refractive index lower than the refractive index of each of the plurality of lenses.

14. The light emitting device according to claim 13, wherein the embedding layer contains at least one of SiO, SiN, SiON, and resin.

15. The light emitting device of claim 13, wherein the buried layer comprises a color conversion material.

16. The light emitting device according to claim 1, further comprising an electrode layer, the electrode layer being provided between each of the plurality of light emitting elements and the light absorber.

17. The light emitting device according to claim 1, wherein the height of the light absorber is equal to or greater than 0.2 μm and less than 100 μm.

18. The light emitting device according to claim 1, wherein the height of the light absorber is greater than the height of each of the plurality of lenses.

19. The light emitting device according to claim 1, wherein the plurality of lenses include a first lens, the one or more light absorbers have a first light absorber and a second light absorber provided along the first surface with the first lens therebetween, and a distance between the first lens and the first light absorber is different from a distance between the first lens and the second light absorber.

20. The light emitting device according to claim 1, wherein a center position of at least one of the plurality of lenses on the first surface is different from a center position of the light emitting element corresponding to the one lens on the first surface.

21. A method for manufacturing a light-emitting device, comprising: forming a plurality of recesses in a temporary substrate; forming lenses in the temporary substrate at positions corresponding to each of the plurality of recesses; bonding the temporary substrate to a plurality of light-emitting elements arranged along a first surface; and cutting the temporary substrate to form one or more light absorbers spaced apart from each of the plurality of lenses and absorbing light.

22. An image display device comprising a light-emitting device, the light-emitting device having: a plurality of light-emitting elements arranged along a first surface; a plurality of lenses stacked in a first direction intersecting the first surface at positions corresponding to each of the plurality of light-emitting elements, through which light from each of the plurality of light-emitting elements passes; and one or more light absorbers arranged between the plurality of lenses along the first surface and spaced apart from each of the plurality of lenses, for absorbing light.

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