Display device

Abstract

A display device according to an embodiment of the present invention includes: a light emitting element layer disposed on a substrate; a thin film encapsulation layer disposed on the light emitting element layer; a wavelength conversion layer disposed on the thin film encapsulation layer and including bank dividing light emitting areas and a non-light emitting area; dam structures disposed on the wavelength conversion layer and overlapping one of the light emitting areas; a filling layer disposed on the wavelength conversion layer and positioned between the dam structures; a color filter layer disposed on the dam structures; and an opposite substrate disposed on the color filter layer. The filling layer overlaps the remaining light emitting areas which do not overlap the dam structures among the light emitting areas.

Description

display device

[0001] The present invention relates to a display device.

[0002] As the information society develops, the demand for display devices for displaying images is increasing in various forms. For example, display devices are being used in various electronic devices such as smartphones, digital cameras, laptop computers, navigation systems, and smart televisions.

[0003] The display device may be a flat panel display device such as a liquid crystal display device, a field emission display device, or a light emitting display device. The light emitting display device includes an organic light emitting display device including an organic light emitting element, an inorganic light emitting display device including an inorganic light emitting element such as an inorganic semiconductor, and an ultra-small light emitting display device including an ultra-solid light emitting element.

[0004] An organic light-emitting device may include two opposing electrodes and a light-emitting layer interposed therebetween. The light-emitting layer receives electrons and holes from the two electrodes, recombines them, and generates excitons. The generated excitons change from an excited state to a ground state, thereby emitting light.

[0005] Organic light-emitting display devices that include organic light-emitting elements are attracting attention as next-generation display devices because they do not require a light source such as a backlight unit, so they can be configured as thin, lightweight devices with low power consumption, and have high-quality characteristics such as a wide viewing angle, high brightness and contrast, and fast response speed.

[0006] The problem to be solved by the present invention is to provide a display device capable of improving the brightness ratio and white efficiency of the front side.

[0007] The tasks of the present invention are not limited to the tasks mentioned above, and other technical tasks not mentioned will be clearly understood by those skilled in the art from the description below.

[0008] According to one embodiment of the present invention for solving the above problem, a display device includes a light-emitting element layer disposed on a substrate, a thin film encapsulation layer disposed on the light-emitting element layer, a wavelength conversion layer disposed on the thin film encapsulation layer and including a bank that divides light-emitting areas and non-light-emitting areas, a dam structure disposed on the wavelength conversion layer and overlapping one of the light-emitting areas, a filling layer disposed on the wavelength conversion layer and between the dam structures, a color filter layer disposed on the dam structure, and an opposing substrate disposed on the color filter layer, wherein the filling layer can overlap the remaining light-emitting areas among the light-emitting areas that do not overlap with the dam structure.

[0009] The light-emitting region overlapping the dam structure may have a light conversion rate of 50% or less in the wavelength conversion layer.

[0010] The above light-emitting regions include a first light-emitting region emitting blue, a second light-emitting region emitting red, and a third light-emitting region emitting green, and the dam structure can overlap the first light-emitting region.

[0011] The above-mentioned charging layer may overlap the second light-emitting region and the third light-emitting region.

[0012] The above dam structure may not overlap with the above non-luminous area.

[0013] The above dam structure may overlap the non-luminous region adjacent to the overlapping luminous region and may not overlap the non-luminous region spaced apart from the overlapping luminous region.

[0014] The above dam structure may overlap the above non-luminous area.

[0015] The refractive index of the above dam structure may be greater than the refractive index of the filling layer.

[0016] The refractive index of the above dam structure may be 1.5 to 2.

[0017] The refractive index of the above-mentioned filling layer may be 1.05 to 1.4.

[0018] The thickness of the above dam structure may be less than or equal to the thickness of the filling layer.

[0019] The thickness of the above dam structure and the thickness of the filling layer may each be 0.1 to 4.5 μm.

[0020] The color filter layer includes a plurality of color filters and an overcoat layer covering the plurality of color filters, and the dam structure and the filling layer can be in contact with the overcoat layer.

[0021] The wavelength conversion layer may include a light-transmitting pattern overlapping the dam structure, and a first wavelength conversion pattern and a second wavelength conversion pattern overlapping the filling layer.

[0022] The above-mentioned charging layer overlaps the above-mentioned light-emitting regions and can cover the above-mentioned dam structure.

[0023] The above charging layer is in contact with the color filter layer, and the dam structure can be spaced apart from the color filter layer.

[0024] The above-mentioned filling layer may include a filling resin and filling particles dispersed in the filling resin, may include a silicone compound, or may include vacuum, nitrogen, or an inert gas.

[0025] In addition, a display device according to one embodiment may include a light emitting element layer disposed on a substrate, a thin film encapsulation layer disposed on the light emitting element layer, a wavelength conversion layer disposed on the thin film encapsulation layer and including a bank that divides light emitting areas and non-light emitting areas, a dam structure disposed on the wavelength conversion layer and overlapping a light emitting area having a light conversion rate of 50% or less in the wavelength conversion layer among the light emitting areas, a filling layer disposed on the wavelength conversion layer and disposed between the dam structures, a color filter layer disposed on the dam structure, and an opposing substrate disposed on the color filter layer.

[0026] The above light-emitting regions include a first light-emitting region emitting blue, a second light-emitting region emitting red, and a third light-emitting region emitting green, and the dam structure can overlap the first light-emitting region.

[0027] The above light-emitting regions include a first light-emitting region emitting blue, a second light-emitting region emitting red, a third light-emitting region emitting green, and a fourth light-emitting region emitting white, and the dam structure can overlap the fourth light-emitting region.

[0028] The taper angle of the above dam structure may be from 20° to 170°.

[0029] The above dam structure may have an upper surface area of ​​60% to 1000% based on a lower surface area of ​​100%.

[0030] In addition, a display device according to one embodiment includes a light emitting element layer disposed on a substrate, a thin film encapsulation layer disposed on the light emitting element layer, a wavelength conversion layer disposed on the thin film encapsulation layer, a filling layer disposed on the wavelength conversion layer, a color filter layer disposed on the filling layer, and a counter substrate disposed on the color filter layer, wherein the filling layer may have a refractive index of 1.05 to 1.4, and a thickness of the filling layer may be 0.1 to 4.5 μm.

[0031] The charging layer is disposed between the wavelength conversion layer and the color filter layer, and can contact the wavelength conversion layer and the color filter layer, respectively.

[0032] The above-mentioned filling layer may include a filling resin and filling particles dispersed in the filling resin, or may include a silicone compound.

[0033] Specific details of other embodiments are included in the detailed description and drawings.

[0034] A display device according to one embodiment can increase the brightness ratio of a front surface of the display device and prevent a decrease in front brightness efficiency by including a filling layer having a low refractive index between a wavelength conversion layer and a color filter layer.

[0035] In addition, the display device according to one embodiment includes a dam structure having a high refractive index arranged in a light-emitting area having a light conversion rate of 50% or less, thereby improving a luminance ratio of a front surface of the light-emitting area and maintaining a gap between the substrate and the opposing substrate.

[0036] The effects according to the embodiments are not limited to those exemplified above, and more diverse effects are included in this specification.

[0037] Figure 1 is a plan view of a display device according to one embodiment.

[0038] FIG. 2 is a schematic layout diagram showing wiring included in a display device according to one embodiment.

[0039] Figure 3 is an equivalent circuit diagram of one sub-pixel according to one embodiment.

[0040] Fig. 4 is a cross-sectional view schematically illustrating a display device according to one embodiment.

[0041] Fig. 5 is a cross-sectional view schematically illustrating a display device according to one embodiment.

[0042] Fig. 6 is a cross-sectional view schematically showing a charging layer of a display device according to one embodiment.

[0043] Figures 7 to 9 are cross-sectional views showing a manufacturing method of a display device according to one embodiment, step by step.

[0044] Fig. 10 is a cross-sectional view showing a display device according to another embodiment.

[0045] Fig. 11 is a plan view showing each light-emitting area of ​​the display device of Fig. 10.

[0046] Fig. 12 is a cross-sectional view showing an example of a dam structure according to one embodiment.

[0047] Fig. 13 is a cross-sectional view showing another example of a dam structure according to one embodiment.

[0048] Fig. 14 is a cross-sectional view showing another example of a dam structure according to one embodiment.

[0049] FIGS. 15 and 16 are drawings showing other examples of a display device according to one embodiment.

[0050] Fig. 17 is a cross-sectional view showing a display device according to another embodiment.

[0051] Fig. 18 is a cross-sectional view showing a display device according to another embodiment.

[0052] Fig. 19 is a plan view showing the light-emitting areas of the display device of Fig. 18.

[0053] Figure 20 is a graph showing the white efficiency and the lateral luminance ratio according to the refractive index of the filling layer.

[0054] Figure 21 is a graph showing the BT2020 color matching rate according to the refractive index and thickness of the filling layer.

[0055] Figure 22 is a graph showing the lateral luminance ratio of each light-emitting area according to the angle.

[0056] Figure 23 is a graph showing the white efficiency of the display device according to the taper angle of the dam structure.

[0057] The advantages and features of the present invention, and the methods for achieving them, will become clearer with reference to the embodiments described in detail below together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various different forms. These embodiments are provided solely to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention, and the present invention is defined solely by the scope of the claims.

[0058] When an element or layer is referred to as "on" another element or layer, it includes both cases where it is directly above the other element or layer or where there is another layer or material intervening therebetween. Similarly, when an element or layer is referred to as "below," "left," and "right," it includes both cases where it is directly adjacent to the other element or where there is another layer or material intervening therebetween. Like reference numerals throughout the specification refer to like elements.

[0059] Although terms like "first" and "second" are used to describe various components, these components are not limited by these terms. These terms are used merely to distinguish one component from another. Therefore, it should be understood that a "first" component referred to below may also be a "second" component within the technical scope of the present invention.

[0060] Hereinafter, embodiments will be described with reference to the attached drawings.

[0061] Figure 1 is a plan view of a display device according to one embodiment.

[0062] Referring to FIG. 1, a display device (10) according to one embodiment can be applied to various home appliances such as a smart phone, a mobile phone, a tablet PC, a PDA (Personal Digital Assistant), a PMP (Portable Multimedia Player), a television, a game console, a wristwatch-type electronic device, a head-mounted display, a monitor of a personal computer, a laptop computer, an automobile navigation system, an automobile dashboard, a digital camera, a camcorder, an external billboard, an electronic display, a medical device, an inspection device, a refrigerator, a washing machine, or the like, or an Internet of Things device. In this specification, a television is described as an example of the display device (10), and the TV can have a high resolution or ultra-high resolution such as HD, UHD, 4K, or 8K.

[0063] In addition, the display device (10) according to one embodiment may be classified in various ways according to the display method. For example, the classification of the display device (10) may include an organic light emitting display (OLED), an inorganic light emitting display (inorganic EL), a quantum dot light emitting display (QED), a micro LED display (micro-LED), a nano LED display (nano-LED), a plasma display (PDP), a field emission display (FED), a cathode ray tube display (CRT), a liquid crystal display (LCD), an electrophoretic display (EPD), etc. In the following, an organic light emitting display and an inorganic light emitting display will be described as examples of the display device (10), and unless a special distinction is required, the display devices applied to the embodiments will be simply abbreviated as display devices. However, the embodiments are not limited to the organic light emitting display or the inorganic light emitting display, and other display devices listed above or known in the art may be applied within the scope of sharing the technical idea.

[0064] The display device (10) according to one embodiment may have a square shape in a plan view, for example, a rectangular shape. If the display device (10) is a television, it is arranged so that the long side is positioned in the horizontal direction. However, the display device (10) is not limited thereto, and the long side may be positioned in the vertical direction, and may be installed so as to be rotatable so that the long side is variably positioned in the horizontal or vertical direction.

[0065] The display device (10) may include a display area (DPA) and a non-display area (NDA). The display area (DPA) may be an active area where an image is displayed. The display area (DPA) may have a rectangular shape in a plan view similar to the overall shape of the display device (10), but is not limited thereto.

[0066] The display area (DPA) may include a plurality of pixels (PX). The plurality of pixels (PX) may be arranged in a matrix direction. The shape of each pixel (PX) may be a rectangle or a square in a plan view, but is not limited thereto, and may also be a rhombus shape with each side inclined with respect to one side direction of the display device (10). The plurality of pixels (PX) may include multi-color pixels (PX). For example, the plurality of pixels (PX) may include, but are not limited to, a first color pixel (PX) of red, a second color pixel (PX) of green, and a third color pixel (PX) of blue. Each color pixel (PX) may be a stripe type or a PenTile type. TM ) can be arranged alternately as types.

[0067] A non-display area (NDA) may be arranged around the display area (DPA). The non-display area (NDA) may completely or partially surround the display area (DPA). The display area (DPA) has a rectangular shape, and the non-display area (NDA) may be arranged adjacent to the four sides of the display area (DPA). The non-display area (NDA) may form a bezel of the display device (10).

[0068] A driving circuit or driving element for driving the display area (DPA) may be arranged in the non-display area (NDA). In one embodiment, a pad portion may be provided on the display substrate of the display device (10) in the first non-display area (NDA1) adjacent to the first long side (the lower side in FIG. 1) of the display device (10) and in the second non-display area (NDA2) adjacent to the second long side (the upper side in FIG. 1), and an external device (EXD) may be mounted on the pad electrode of the pad portion. Examples of the external device (EXD) may include a connection film, a printed circuit board, a driving chip (DIC), a connector, a wiring connection film, and the like. A scan driving unit (SDR), or the like, which is directly formed on the display substrate of the display device (10), may be arranged in the third non-display area (NDA3) adjacent to the first short side (the left side in FIG. 1) of the display device (10). However, the present invention is not limited thereto, and a scan driver (SDR) may be arranged on the second short side (right side in FIG. 1) of the display device (10). The fourth non-display area (NDA4) opposite to the third non-display area (NDA3) may or may not include a driving circuit or a driving element.

[0069] FIG. 2 is a schematic layout diagram showing wiring included in a display device according to one embodiment.

[0070] Referring to FIG. 2, the display device (10) may include a plurality of wires. The plurality of wires may include a scan line (SCL), a sensing line (SSL), a data line (DTL), an initialization voltage wire (VIL), a first voltage wire (VDL), and a second voltage wire (VSL). In addition, although not shown in the drawing, the display device (10) may further include other wires.

[0071] A scan line (SCL) and a sensing line (SSL) may extend in a first direction (DR1). The scan line (SCL) and the sensing line (SSL) may be connected to a scan driver (SDR). The scan driver (SDR) may include a driving circuit. The scan driver (SDR) may be arranged on one side of the display area (DPA) in the first direction (DR1), but is not limited thereto. The scan driver (SDR) is connected to a signal connection line (CWL), and at least one end of the signal connection line (CWL) may form a pad (WPD_CW) on a pad area (PDA) of a non-display area and be connected to an external device.

[0072] Meanwhile, the meaning of "connection" in this specification may refer not only to a connection between one member and another member through mutual physical contact, but also to a connection through another member. Furthermore, this may be understood as a single, integrated member in which one part and another part are interconnected by the integrated member. Furthermore, the connection between one member and another member may be interpreted to include not only a direct connection but also an electrical connection through another member.

[0073] The data line (DTL) and the initialization voltage line (VIL) may extend in a second direction (DR2) intersecting the first direction (DR1). The initialization voltage line (VIL) may further include a portion branched from the first direction (DR1) in addition to a portion extending in the second direction (DR2). The first voltage line (VDL) and the second voltage line (VSL) may also include a portion extending in the second direction (DR2) and a portion connected thereto and extending in the first direction (DR1). The first voltage line (VDL) and the second voltage line (VSL) may have a mesh structure, but are not limited thereto. Although not illustrated in the drawing, each pixel (PX) of the display device (10) may be connected to at least one data line (DTL), an initialization voltage line (VIL), a first voltage line (VDL), and a second voltage line (VSL).

[0074] A data line (DTL), an initialization voltage line (VIL), a first voltage line (VDL), and a second voltage line (VSL) can be electrically connected to at least one wiring pad (WPD). Each wiring pad (WPD) can be arranged in a pad area (PDA). In one embodiment, a wiring pad (WPD_DT, hereinafter referred to as a 'data pad') of a data line (DTL) is arranged in a pad area (PDA) on one side of a second direction (DR2) of a display area (DPA), and a wiring pad (WPD_Vint, hereinafter referred to as an 'initialization voltage pad') of an initialization voltage line (VIL), a wiring pad (WPD_VDD, hereinafter referred to as a 'first power pad') of a first voltage line (VDL), and a wiring pad (WPD_VSS, hereinafter referred to as a 'second power pad') of a second voltage line (VSL) can be arranged in a pad area (PDA) located on the other side of the second direction (DR2) of the display area (DPA). As another example, the data pad (WPD_DT), the initialization voltage pad (WPD_Vint), the first power pad (WPD_VDD), and the second power pad (WPD_VSS) may all be positioned in the same area, for example, the non-display area (NDA) located above the display area (DPA). An external device (EXD) may be mounted on the wiring pad (WPD). The external device (EXD) may be mounted on the wiring pad (WPD) using an anisotropic conductive film, ultrasonic bonding, or the like.

[0075] Each pixel (PX) or sub-pixel (SPX) of the display device (10) includes a pixel driving circuit. The above-described wirings may pass through each pixel (PX) or its surroundings to apply a driving signal to each pixel driving circuit. The pixel driving circuit may include a transistor and a capacitor. The number of transistors and capacitors of each pixel driving circuit may be variously modified. According to one embodiment, each sub-pixel (SPXn) of the display device (10) may have a 3T1C structure in which the pixel driving circuit includes three transistors and one capacitor. Hereinafter, the pixel driving circuit will be described using the 3T1C structure as an example, but the present invention is not limited thereto, and various other modified pixel (PX) structures such as a 2T1C structure, a 7T1C structure, and a 6T1C structure may be applied.

[0076] Figure 3 is an equivalent circuit diagram of one sub-pixel according to one embodiment.

[0077] Referring to FIG. 3, each sub-pixel (SPX) of a display device (10) according to one embodiment includes, in addition to a light-emitting element (ED), three transistors (DTR, STR1, STR2) and one storage capacitor (CST).

[0078] The light-emitting element (ED) emits light according to the current supplied through the driving transistor (DTR). The light-emitting element (ED) can be implemented as an inorganic light-emitting diode, an organic light-emitting diode, a micro light-emitting diode, a nano light-emitting diode, etc.

[0079] A first electrode (i.e., an anode electrode) of the light emitting element (ED) may be connected to a source electrode of a driving transistor (DTR), and a second electrode (i.e., a cathode electrode) may be connected to a second power line (ELVSL) to which a low-potential voltage (a second power voltage) lower than a high-potential voltage (a first power voltage) of a first power line (ELVDL) is supplied.

[0080] The driving transistor (DTR) controls the current flowing from the first power line (ELVDL) to which the first power voltage is supplied to the light-emitting element (ED) according to the voltage difference between the gate electrode and the source electrode. The gate electrode of the driving transistor (DTR) may be connected to the first electrode of the first transistor (STR1), the source electrode may be connected to the first electrode of the light-emitting element (ED), and the drain electrode may be connected to the first power line (ELVDL) to which the first power voltage is applied.

[0081] The first transistor (STR1) is turned on by a scan signal of a scan line (SCL) to connect the data line (DTL) to the gate electrode of the driving transistor (DTR). The gate electrode of the first transistor (STR1) may be connected to the scan line (SCL), the first electrode may be connected to the gate electrode of the driving transistor (DTR), and the second electrode may be connected to the data line (DTL).

[0082] The second transistor (STR2) is turned on by a sensing signal of the sensing signal line (SSL) to connect the initialization voltage line (VIL) to the source electrode of the driving transistor (DTR). The gate electrode of the second transistor (STR2) may be connected to the sensing signal line (SSL), the first electrode may be connected to the initialization voltage line (VIL), and the second electrode may be connected to the source electrode of the driving transistor (DTR).

[0083] In one embodiment, the first electrode of each of the first and second transistors (STR1, STR2) may be a source electrode and the second electrode may be a drain electrode, but the present invention is not limited thereto and vice versa.

[0084] A capacitor (CST) is formed between the gate electrode and the source electrode of the driving transistor (DTR). The storage capacitor (CST) stores the difference between the gate voltage and the source voltage of the driving transistor (DTR).

[0085] The driving transistor (DTR) and the first and second transistors (STR1, STR2) may be formed as thin film transistors. In addition, although FIG. 3 has been described with the focus on the driving transistor (DTR) and the first and second switching transistors (STR1, STR2) being N-type MOSFETs (Metal Oxide Semiconductor Field Effect Transistors), the present invention is not limited thereto. That is, the driving transistor (DTR) and the first and second switching transistors (STR1, STR2) may be P-type MOSFETs, or some may be N-type MOSFETs and others may be P-type MOSFETs.

[0086] Fig. 4 is a cross-sectional view schematically illustrating a display device according to one embodiment.

[0087] Referring to FIG. 4, a display device (10) according to one embodiment may include a substrate (SUB), a light emitting element layer (EML), a thin film encapsulation layer (TFEL), a wavelength conversion layer (WCL), a filling layer (LRF), a color filter layer (CFL), and a counter substrate (TSUB).

[0088] The substrate (SUB) may be an insulating substrate. The substrate (SUB) may include a transparent material. For example, the substrate (SUB) may include a transparent insulating material such as glass, quartz, etc. The substrate (SUB) may be a rigid substrate. Furthermore, the substrate (SUB) is not limited thereto, and may include a plastic such as polyimide, etc., and may have flexible characteristics such as being able to be bent, folded, or rolled.

[0089] An emission layer (EML) may be disposed on a substrate (SUB). The emission layer (EML) may include a plurality of switching elements and a plurality of light-emitting elements (EDs) disposed in each sub-pixel. The plurality of switching elements may drive the plurality of light-emitting elements (EDs) to emit light from the plurality of light-emitting elements (EDs).

[0090] A thin film encapsulation layer (TFEL) may be disposed on the light emitting device layer (EML). The thin film encapsulation layer (TFEL) includes an organic film disposed between a plurality of inorganic films, and may protect the light emitting device layer (EML) from external moisture and oxygen.

[0091] A wavelength conversion layer (WCL) may be disposed on a thin film encapsulation layer (TFEL). The wavelength conversion layer (WCL) may convert the wavelength of light emitted from the light emitting element layer (EML) to emit red light, green light, and blue light.

[0092] A charging layer (LRF) may be disposed on a wavelength conversion layer (WCL). The charging layer (LRF) may improve light efficiency by totally reflecting light emitted from the wavelength conversion layer (WCL) at the interface with the wavelength conversion layer (WCL). The charging layer (LRF) may include a low-refractive material, etc., according to embodiments described below.

[0093] A color filter layer (CFL) may be disposed on the charging layer (LRF). The color filter layer (CFL) can filter light incident from the outside to reduce reflection of external light and improve the color characteristics of light emitted through the wavelength conversion layer (WCL).

[0094] A counter substrate (TSUB) may be placed on the color filter layer (CFL). The counter substrate (TSUB) may encapsulate the light emitting element layer (EML) together with the substrate (SUB). The counter substrate (TSUB) may include a transparent material. For example, the counter substrate (TSUB) may include a transparent insulating material such as glass or quartz.

[0095] Fig. 5 is a cross-sectional view schematically illustrating a display device according to one embodiment. Fig. 6 is a cross-sectional view schematically illustrating a filling layer of a display device according to one embodiment.

[0096] Referring to FIGS. 5 and 6, a display device (10) according to one embodiment may include a substrate (SUB), a light emitting element layer (EML), a thin film encapsulation layer (TFEL), a wavelength conversion layer (WCL), a filling layer (LRF), a color filter layer (CFL), and a counter substrate (TSUB).

[0097] A substrate (SUB) may define a plurality of light-emitting areas (LA1, LA2, LA3) and a non-light-emitting area (NLA). The plurality of light-emitting areas (LA1, LA2, LA3) may be areas where light generated from light-emitting elements (ED1, ED2, ED3) is emitted to the outside, and the non-light-emitting area (NLA) may be an area where light is not emitted to the outside. In one embodiment, a first light-emitting area (LA1), a second light-emitting area (LA2), and a third light-emitting area (LA3) may be sequentially and repeatedly arranged along a first direction (DR1) in the display area (DPA).

[0098] The first light-emitting area (LA1), the second light-emitting area (LA2), and the third light-emitting area (LA3) may have different widths measured in the first direction (DR1). For example, the width of the first light-emitting area (LA1) may be smaller than the width of the third light-emitting area (LA3), and the width of the third light-emitting area (LA3) may be smaller than the width of the second light-emitting area (LA2). However, the present invention is not limited thereto, and the widths of the first light-emitting area (LA1), the second light-emitting area (LA2), and the third light-emitting area (LA3) may be the same as each other when measured in the first direction (DR1).

[0099] Each of the light-emitting areas (LA1, LA2, LA3) can emit light of a different color. In one embodiment, the first light-emitting area (LA1) can emit light of a first color, the second light-emitting area (LA2) can emit light of a second color, and the third light-emitting area (LA3) can emit light of a third color. In one embodiment, the light of the first color can be blue light having a peak wavelength in a range of about 440 nm to about 480 nm, the light of the second color can be red light having a peak wavelength in a range of about 610 nm to about 650 nm, and the light of the third color can be green light having a peak wavelength in a range of about 510 nm to about 550 nm. However, the present invention is not limited thereto, and the light of the second color can be green light and the light of the third color can be red light.

[0100] Switching elements (T1, T2, T3) may be arranged on a substrate (SUB). In one embodiment, a first switching element (T1) may be positioned in a first light-emitting area (LA1) of the substrate (SUB), a second switching element (T2) may be positioned in a second light-emitting area (LA2), and a third switching element (T3) may be positioned in a third light-emitting area (LA3). However, this is not limited thereto, and in another embodiment, at least one of the first switching element (T1), the second switching element (T2), and the third switching element (T3) may be positioned in a non-light-emitting area (NLA).

[0101] In one embodiment, the first switching element (T1), the second switching element (T2), and the third switching element (T3) may each be a thin film transistor including amorphous silicon, polysilicon, or an oxide semiconductor. In addition, although not shown in the drawing, a plurality of signal lines (e.g., gate lines, data lines, power lines, etc.) for transmitting signals to each switching element may be further arranged on the substrate (SUB). In addition, each of the switching elements (T1, T2, and T3) may be configured to include a first insulating layer (120). For example, the first insulating layer (120) may be a gate insulating film or an interlayer insulating film of the thin film transistor. The gate insulating film or the interlayer insulating film may be formed of a single layer including any one of silicon oxide (SiOx), silicon nitride oxide (SiOxNy), and silicon nitride (SiNx), or a multilayer thereof.

[0102] A second insulating layer (130) may be positioned on the first switching element (T1), the second switching element (T2), and the third switching element (T3). In one embodiment, the second insulating layer (130) may be a planarizing film. In one embodiment, the second insulating layer (130) may be formed of an organic film. For example, the second insulating layer (130) may include an acrylic resin, an epoxy resin, an imide resin, an ester resin, or the like. In one embodiment, the second insulating layer (130) may include a positive photosensitive material or a negative photosensitive material.

[0103] A first anode electrode (AE1), a second anode electrode (AE2), and a third anode electrode (AE3) may be positioned on the second insulating layer (130). The first anode electrode (AE1) may be positioned in the first light-emitting area (LA1), but at least a portion thereof may extend to the non-light-emitting area (NLA). The second anode electrode (AE2) may be positioned in the second light-emitting area (LA2), but at least a portion thereof may extend to the non-light-emitting area (NLA). The third anode electrode (AE3) may be positioned in the third light-emitting area (LA3), but at least a portion thereof may extend to the non-light-emitting area (NLA). The first anode electrode (AE1) may be connected to the first switching element (T1) by penetrating the second insulating layer (130), the second anode electrode (AE2) may be connected to the second switching element (T2) by penetrating the second insulating layer (130), and the third anode electrode (AE3) may be connected to the third switching element (T3) by penetrating the second insulating layer (130).

[0104] In one embodiment, the widths or areas of the first anode electrode (AE1), the second anode electrode (AE2), and the third anode electrode (AE3) may be different from each other. For example, the width of the first anode electrode (AE1) may be smaller than the width of the second anode electrode (AE2), and the width of the third anode electrode (AE3) may be smaller than the width of the second anode electrode (AE2) and larger than the width of the first anode electrode (AE1). Alternatively, the area of ​​the first anode electrode (AE1) may be smaller than the area of ​​the second anode electrode (AE2), and the area of ​​the third anode electrode (AE3) may be smaller than the area of ​​the second anode electrode (AE2) and larger than the area of ​​the first anode electrode (AE1). Alternatively, the area of ​​the first anode electrode (AE1) may be smaller than the area of ​​the second anode electrode (AE2), and the area of ​​the third anode electrode (AE3) may be larger than the area of ​​the second anode electrode (AE2) and the area of ​​the first anode electrode (AE1). However, this is not limited to the above-described embodiment. In another embodiment, the widths or areas of the first anode electrode (AE1), the second anode electrode (AE2), and the third anode electrode (AE3) may be substantially the same.

[0105] The first anode electrode (AE1), the second anode electrode (AE2), and the third anode electrode (AE3) may be reflective electrodes. The first anode electrode (AE1), the second anode electrode (AE2), and the third anode electrode (AE3) may have a laminated film structure in which a material layer having a high work function, such as ITO (indium tin oxide), IZO (indium zinc oxide), ZnO (zinc oxide), ITZO (indium tin zinc oxide), or indium oxide (In2O3), is laminated with a reflective material layer, such as silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), lead (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), or a mixture thereof. The material layer having a high work function may be disposed above the reflective material layer and close to the light-emitting layer (OL). The first anode electrode (AE1), the second anode electrode (AE2), and the third anode electrode (AE3) may have a multilayer structure of ITO / Mg, ITO / MgF, ITO / Ag, or ITO / Ag / ITO, but are not limited thereto.

[0106] A pixel defining film (150) may be positioned on the first anode electrode (AE1), the second anode electrode (AE2), and the third anode electrode (AE3). The pixel defining film (150) may include an opening exposing the first anode electrode (AE1), an opening exposing the second anode electrode (AE2), and an opening exposing the third anode electrode (AE3), and may define a first light-emitting area (LA1), a second light-emitting area (LA2), a third light-emitting area (LA3), and a non-light-emitting area (NLA). That is, an area of ​​the first anode electrode (AE1) that is exposed and not covered by the pixel defining film (150) may be the first light-emitting area (LA1). An area of ​​the second anode electrode (AE2) that is exposed and not covered by the pixel defining film (150) may be the second light-emitting area (LA2). The area of ​​the third anode electrode (AE3) that is not covered by the pixel defining film (150) and is exposed may be a third light-emitting area (LA3). The area where the pixel defining film (150) is located may be a non-light-emitting area (NLA).

[0107] The pixel defining film (150) may include an organic insulating material such as polyacrylates resin, epoxy resin, phenolic resin, polyamides resin, polyimides rein, unsaturated polyesters resin, polyphenylenes resin, polyphenylenesulfides resin, or benzocyclobutene (BCB).

[0108] In one embodiment, the pixel defining film (150) may overlap with the bank (180) of the wavelength conversion layer (WCL) to be described later. An emission layer (OL) may be disposed on the first anode electrode (AE1), the second anode electrode (AE2), and the third anode electrode (AE3). In one embodiment in which the display device (10) is an organic light emitting display device, the emission layer (OL) may include an organic layer including an organic material. The organic layer includes an organic emission layer, and in some cases, may further include at least one of a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer as an auxiliary layer that assists light emission.

[0109] In one embodiment, the light-emitting layer (OL) may have a tandem structure including a plurality of organic light-emitting layers that are overlapped in the thickness direction and a charge generation layer disposed therebetween. Each of the overlapping organic light-emitting layers may emit light of the same wavelength, but may also emit light of different wavelengths. For example, each of the overlapping organic light-emitting layers may include an organic light-emitting layer that emits light of a green wavelength and an organic light-emitting layer that emits light of a blue wavelength. In another exemplary embodiment, each of the overlapping organic light-emitting layers may include an organic light-emitting layer that emits light of a red wavelength, an organic light-emitting layer that emits light of a green wavelength, and an organic light-emitting layer that emits light of a blue wavelength.

[0110] In one embodiment, the light-emitting layer (OL) may have the shape of a continuous film formed across a plurality of light-emitting regions (LA1, LA2, LA3) and a non-light-emitting region (NLA). In this case, the wavelength of light emitted by the light-emitting layer (OL) may be the same. For example, the light-emitting layer (OL) may emit blue light, light of a white wavelength, or ultraviolet light in the plurality of light-emitting regions (LA1, LA2, LA3).

[0111] A cathode electrode (CE) may be positioned on the light-emitting layer (OL). In one embodiment, the cathode electrode (CE) may be semi-permeable or transmissive. When the cathode electrode (CE) is semi-permeable, the cathode electrode (CE) may include Ag, Mg, Cu, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, LiF / Ca, LiF / Al, Mo, Ti, or compounds or mixtures thereof, for example, a mixture of Ag and Mg. In addition, when the thickness of the cathode electrode (CE) is tens to hundreds of angstroms, the cathode electrode (CE) may be semi-permeable.

[0112] When the cathode electrode (CE) is transparent, the cathode electrode (CE) may include a transparent conductive oxide (TCO). For example, the cathode electrode (CE) may include tungsten oxide (WxOy), titanium oxide (TiO2), indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium tin zinc oxide (ITZO), magnesium oxide (MgO), etc.

[0113] A first anode electrode (AE1), a light-emitting layer (OL), and a cathode electrode (CE) may form a first light-emitting element (ED1), a second anode electrode (AE2), a light-emitting layer (OL), and a cathode electrode (CE) may form a second light-emitting element (ED2), and a third anode electrode (AE3), a light-emitting layer (OL), and a cathode electrode (CE) may form a third light-emitting element (ED3). The first light-emitting element (ED1), the second light-emitting element (ED2), and the third light-emitting element (ED3) each emit source light, and the source light may be provided to a wavelength conversion layer (WCL). The source light may be, for example, blue light, but is not limited thereto, and may be white light or ultraviolet light. The first light-emitting element (ED1), the second light-emitting element (ED2), and the third light-emitting element (ED3) may be organic light-emitting diodes.

[0114] A thin film encapsulation layer (TFEL) may be positioned on the cathode electrode (CE). The thin film encapsulation layer (TFEL) may be commonly positioned in the first light-emitting region (LA1), the second light-emitting region (LA2), the third light-emitting region (LA3), and the non-light-emitting region (NLA). In one embodiment, the thin film encapsulation layer (TFEL) may directly cover the cathode electrode (CE).

[0115] In one embodiment, the thin film encapsulation layer (TFEL) may include a first encapsulation inorganic film (171), an encapsulation organic film (173), and a second encapsulation inorganic film (175) sequentially laminated on a cathode electrode (CE).

[0116] The first encapsulating inorganic film (171) and the second encapsulating inorganic film (175) may each include at least one of silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, silicon oxynitride, and lithium fluoride. The encapsulating organic film (173) may include an acrylic resin, a methacrylate resin, a polyisoprene, a vinyl resin, an epoxy resin, a urethane resin, a cellulose resin, and a perylene resin.

[0117] However, the structure of the thin film encapsulation layer (TFEL) is not limited to the above-described example, and the stacked structure of the thin film encapsulation layer (TFEL) can be changed in various ways.

[0118] Meanwhile, a wavelength conversion layer (WCL) may be placed on an emission layer (EML) including a thin film encapsulation layer (TFEL).

[0119] The wavelength conversion layer (WCL) may include a bank (180), a light transmitting pattern (230), a first wavelength conversion pattern (240), a second wavelength conversion pattern (250), and a capping layer (300).

[0120] The bank (180) may be arranged on a thin film encapsulation layer (TFEL). The bank (180) may partition light-emitting areas (LA1, LA2, LA3) and a non-light-emitting area (NLA). The bank (180) may be arranged to overlap the non-light-emitting area (NLA) to block light transmission. More specifically, the bank (180) may be positioned between the light-transmitting pattern (230) and the first wavelength conversion pattern (240), between the first wavelength conversion pattern (240) and the second wavelength conversion pattern (250), and between the second wavelength conversion pattern (250) and the light-transmitting pattern (230), thereby preventing color mixing between adjacent light-emitting areas.

[0121] The bank (180) may include an organic light-shielding material and may be formed through a coating and exposure process of the organic light-shielding material, an inkjet method, or the like. For example, the bank (180) may include an organic material and a dye or pigment having light-shielding properties mixed with the organic material. The organic material may include an acrylic resin, a methacrylate resin, a polyisoprene, a vinyl resin, an epoxy resin, a urethane resin, a cellulose resin, a perylene resin, and the like. The dye or pigment may include carbon black, and the like.

[0122] The light-transmitting pattern (230) may be arranged on a thin film encapsulation layer (TFEL). The light-transmitting pattern (230) may overlap the first light-emitting area (LA1). The light-transmitting pattern (230) may transmit incident light. When the source light provided from the first light-emitting element (ED1) is blue light, the blue source light may transmit through the light-transmitting pattern (230).

[0123] In one embodiment, the light transmitting pattern (230) may include a first base resin (231) and may further include a first scatterer (233) dispersed within the first base resin (231).

[0124] The first base resin (231) may be formed of a material with high light transmittance. In one embodiment, the first base resin (231) may be formed of an organic material. For example, the first base resin (231) may include an organic material such as an epoxy resin, an acrylic resin, a cardo resin, or an imide resin.

[0125] The first scatterer (233) may have a different refractive index from the first base resin (231) and may form an optical interface with the first base resin (231). For example, the first scatterer (233) may be a light-scattering particle. The first scatterer (233) is not particularly limited as long as it is a material capable of scattering at least a portion of transmitted light, but may be, for example, a metal oxide particle or an organic particle. Examples of the metal oxide include titanium oxide (TiO2), zirconium oxide (ZrO2), aluminum oxide (Al2O3), indium oxide (In2O3), zinc oxide (ZnO), or tin oxide (SnO2), and examples of the organic particle material include an acrylic resin or a urethane resin. The first scatterer (233) may scatter light in a random direction regardless of the incident direction of the incident light without substantially converting the wavelength of the light transmitting the light transmission pattern (230).

[0126] In one embodiment, the light-transmitting pattern (230) may be formed by applying a photosensitive material and exposing and developing the same. However, the present invention is not limited thereto, and the light-transmitting pattern (230), the first wavelength conversion pattern (240), and the second wavelength conversion pattern (250) may also be formed using an inkjet method.

[0127] The first wavelength conversion pattern (240) and the second wavelength conversion pattern (250) can be arranged on a thin film encapsulation layer (TFEL).

[0128] The first wavelength conversion pattern (240) is positioned on the thin film encapsulation layer (TFEL) and may overlap with the second light-emitting area (LA2). The first wavelength conversion pattern (240) may convert or shift the peak wavelength of incident light into light of another specific peak wavelength and emit the light. In one embodiment, the first wavelength conversion pattern (240) may convert the source light provided from the second light-emitting element (ED2) into red light having a peak wavelength in the range of about 610 nm to about 650 nm and emit the converted light.

[0129] The first wavelength conversion pattern (240) may include a second base resin (241) and a first wavelength shifter (245) dispersed within the second base resin (241), and may further include a second scatterer (243) dispersed within the second base resin (241).

[0130] The second base resin (241) may be formed of a material with high light transmittance. In one embodiment, the second base resin (241) may be formed of an organic material. The second base resin (241) may be formed of the same material as the first base resin (231), or may include at least one of the materials exemplified as constituent materials of the first base resin (231).

[0131] The first wavelength shifter (245) can convert or shift the peak wavelength of incident light to another specific peak wavelength. In one embodiment, the first wavelength shifter (245) can convert and emit the source light provided from the second light-emitting element (ED2), for example, light of a first color, which is blue light, into red light having a single peak wavelength in the range of about 610 nm to about 650 nm.

[0132] Examples of the first wavelength shifter (245) include quantum dots, quantum rods, or fluorescent materials. For example, quantum dots may be particulate materials that emit a specific color when electrons transition from the conduction band to the valence band.

[0133] The above quantum dot may be a semiconductor nanocrystal material. The quantum dot may have a specific band gap depending on its composition and size, and may absorb light and then emit light with a unique wavelength. Examples of the semiconductor nanocrystal of the quantum dot include group IV nanocrystals, group II-VI compound nanocrystals, group III-V compound nanocrystals, group IV-VI nanocrystals, or combinations thereof.

[0134] The II-VI group compound is a binary compound selected from the group consisting of CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS and mixtures thereof; a ternary compound selected from the group consisting of InZnP, AgInS, CuInS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS and mixtures thereof; and a group consisting of four-element compounds selected from the group consisting of HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe and mixtures thereof.

[0135] The group III-V compound may be selected from the group consisting of binary compounds selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, and mixtures thereof; ternary compounds selected from the group consisting of GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, InPSb, GaAlNP, and mixtures thereof; and quaternary compounds selected from the group consisting of GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, and mixtures thereof.

[0136] The group IV-VI compound may be selected from the group consisting of a binary compound selected from the group consisting of SnS, SnSe, SnTe, PbS, PbSe, PbTe, and mixtures thereof; a ternary compound selected from the group consisting of SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, and mixtures thereof; and a quaternary compound selected from the group consisting of SnPbSSe, SnPbSeTe, SnPbSTe, and mixtures thereof. The group IV element may be selected from the group consisting of Si, Ge, and mixtures thereof. The group IV compound may be a binary compound selected from the group consisting of SiC, SiGe, and mixtures thereof.

[0137] Here, binary, ternary, or quaternary compounds may exist within the particle at a uniform concentration, or may exist within the same particle with partially different concentration distributions. Furthermore, one quantum dot may have a core / shell structure surrounding another quantum dot. The interface between the core and shell may have a concentration gradient, with the concentration of the element in the shell decreasing toward the center.

[0138] In one embodiment, the quantum dot may have a core-shell structure comprising a core comprising the aforementioned nanocrystals and a shell surrounding the core. The shell of the quantum dot may function as a protective layer to maintain semiconductor properties by preventing chemical modification of the core and / or as a charging layer to impart electrophoretic properties to the quantum dot. The shell may be a single layer or a multilayer. Examples of the shell of the quantum dot include a metal or non-metal oxide, a semiconductor compound, or a combination thereof.

[0139] For example, the oxide of the metal or non-metal may be a binary compound such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, NiO, or a ternary compound such as MgAl2O4, CoFe2O4, NiFe2O4, CoMn2O4, but the present invention is not limited thereto.

[0140] In addition, the semiconductor compound may include, but is not limited to, CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, etc.

[0141] The light emitted by the first wavelength shifter (245) may have a full width at half maximum (FWHM) of an emission wavelength spectrum of about 45 nm or less, or about 40 nm or less, or about 30 nm or less, thereby further improving the color purity and color reproducibility of the color displayed by the display device (10). In addition, the light emitted by the first wavelength shifter (245) may be emitted in various directions regardless of the incident direction of the incident light. This may improve the side visibility of the second color displayed in the second emission area (LA2).

[0142] Some of the source light provided from the second light-emitting element (ED2) may not be converted into red light by the first wavelength shifter (245). However, the light among the source light that is not converted into red light may be blocked by the color filter layer (CFL) disposed above. On the other hand, the red light among the source light converted by the first wavelength conversion pattern (240) passes through the color filter layer (CFL) and is emitted to the outside.

[0143] The second scatterer (243) may have a different refractive index from the second base resin (241) and may form an optical interface with the second base resin (241). For example, the second scatterer (243) may be a light scattering particle. A detailed description of the second scatterer (243) is substantially the same as or similar to the description of the first scatterer (233), and thus will be omitted.

[0144] The second wavelength conversion pattern (250) is positioned on the thin film encapsulation layer (TFEL) and can overlap with the third light-emitting area (LA3). The second wavelength conversion pattern (250) can convert or shift the peak wavelength of incident light into light of another specific peak wavelength and emit the light. In one embodiment, the second wavelength conversion pattern (250) can convert the source light provided from the third light-emitting element (ED3) into green light in the range of about 510 nm to about 550 nm and emit the converted light.

[0145] The second wavelength conversion pattern (250) may include a third base resin (251) and a second wavelength shifter (255) dispersed within the third base resin (251), and may further include a third scatterer (253) dispersed within the third base resin (251).

[0146] The third base resin (251) may be formed of a material with high light transmittance. In one embodiment, the third base resin (251) may be formed of an organic material. The third base resin (251) may be formed of the same material as the first base resin (231), or may include at least one of the materials exemplified as constituent materials of the first base resin (231).

[0147] The second wavelength shifter (255) can convert or shift the peak wavelength of incident light to another specific peak wavelength. In one embodiment, the second wavelength shifter (255) can convert source light having a peak wavelength in the range of 440 nm to 480 nm, for example, blue light, into green light having a peak wavelength in the range of 510 nm to 550 nm.

[0148] Examples of the second wavelength shifter (255) include quantum dots, quantum rods, or fluorescent materials. A more specific description of the second wavelength shifter (255) will be omitted as it is substantially the same as or similar to that described above in the description of the first wavelength shifter (245). In one embodiment, both the first wavelength shifter (245) and the second wavelength shifter (255) may be formed of quantum dots. In this case, the particle size of the quantum dots forming the first wavelength shifter (245) may be larger than the particle size of the quantum dots forming the second wavelength shifter (255).

[0149] The third scatterer (253) may have a different refractive index than the third base resin (251) and may form an optical interface with the third base resin (251). For example, the third scatterer (253) may be a light scattering particle. A detailed description of the third scatterer (253) is omitted as it is substantially the same as or similar to the description of the second scatterer (243).

[0150] The second wavelength conversion pattern (250) may be provided with source light emitted from the third light-emitting element (ED3), and the second wavelength shifter (255) may convert the source light provided from the third light-emitting element (ED3) into green light having a peak wavelength in the range of about 510 nm to about 550 nm and emit the converted light.

[0151] Some of the source light may not be converted into green light by the second wavelength shifter (255) and may pass through the second wavelength conversion pattern (250). However, the light that is not converted into green light may be blocked by the color filter layer (CFL). On the other hand, the green light converted by the second wavelength conversion pattern (250) among the source light may pass through the color filter layer (CFL) and be emitted to the outside.

[0152] The capping layer (300) can be arranged on the bank (180), the light-transmitting pattern (230), the first wavelength conversion pattern (240), and the second wavelength conversion pattern (250) to cover them. Accordingly, it is possible to prevent impurities such as moisture or air from penetrating from the outside and damaging or contaminating the bank (180), the light-transmitting pattern (230), the first wavelength conversion pattern (240), and the second wavelength conversion pattern (250).

[0153] The capping layer (300) may be made of an inorganic material. For example, the capping layer (300) may include silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, and silicon oxynitride.

[0154] The charging layer (LRF) may be disposed on the capping layer (300). The charging layer (LRF) may be disposed directly on the capping layer (300) and between the wavelength conversion layer (WCL) and the color filter layer (CFL). The charging layer (LRF) may contact the wavelength conversion layer (WCL) and the color filter layer (CFL), respectively. The charging layer (LRF) may cover the entire upper portion of the wavelength conversion layer (WCL). The charging layer (LRF) may be disposed over the entire display area ('DPA' in FIG. 1) of the display device (10). For example, the charging layer (LRF) may be disposed on the light-emitting areas (LA1, LA2, LA3) and the non-light-emitting area (NLA) in the display area. In addition, the charging layer (LRF) may be disposed to extend to the non-display area ('NDA' in FIG. 1) of the display device (10).

[0155] The filling layer (LRF) may have a relatively lower refractive index than the light transmitting pattern (230), the first wavelength conversion pattern (240), the second wavelength conversion pattern (250), and the capping layer (300). The filling layer (LRF) may partially totally reflect light emitted from the wavelength conversion layer (WCL) due to the difference in refractive index at the interface with the capping layer (300). The totally reflected light may be re-incident into the first wavelength conversion pattern (240) and the second wavelength conversion pattern (250) to be reused for wavelength conversion, or may be re-reflected by encountering a scatterer of the wavelength conversion layer (WCL) to be emitted to the front. Therefore, the front light emission efficiency of the display device (10) including the filling layer (LRF) may be improved.

[0156] The filler layer (LRF) may include a filler resin (FR) and filler particles (FP) dispersed in the filler resin (FR). The filler resin (FR) may be made of a material with high light transmittance. For example, the filler resin (FR) may include a resin such as silicone, acrylic, epoxy, polyacrylate, polyurethane, polyethylene, or an ester.

[0157] The charged particle (FP) may include a hollow portion. The charged particle (FP) may include a particle having a hollow portion, such as silica (SiO2), magnesium fluoride (MgF2), or iron oxide (Fe3O4). For example, the hollow particle may include a shell made of one or more of the above materials and a hollow portion inside the shell. In an exemplary embodiment, the diameter of the hollow particle may be, but is not limited to, 20 to 200 nm. The charged layer (LRF) may be formed by mixing the charged particle (FP), a dispersant, a thermal initiator, or a photoinitiator into a charged resin (FR).

[0158] In another embodiment, the filler layer (LRF) includes a filler resin (FR), and the filler resin (FR) may include a silicone compound. For example, the filler layer (LRF) may include a diacrylate-based silicone compound, a polyacrylate-based silicone compound, a polyurethane-based silicone compound, or a polyethylene-based silicone compound, and may be represented by the following chemical formulas.

[0159]

[0160]

[0161]

[0162]

[0163] In the above chemical formulas, R, R', R1, R2 and R3 can each independently be hydrogen or an alkyl group, and n can be 1,000 to 100,000.

[0164] The thickness of the filler layer (LRF) may be 0.1 to 4.5 μm. If the thickness of the filler layer (LRF) is 0.1 μm or more, the flatness of the filler layer (LRF) can be secured and the gap formation with the color filter layer (CFL) can be easily formed. If the thickness of the filler layer (LRF) is 4.5 μm or less, the occurrence of defects due to moisture or oxygen infiltration from the outside through the filler layer (LRF) can be prevented.

[0165] The refractive index of the charging layer (LRF) may be 1.05 to 1.4. If the refractive index of the charging layer (LRF) is 1.05 or higher, the front-side luminance ratio of the display device (10) can be increased. If the refractive index of the charging layer (LRF) is 1.4 or lower, the front-side luminance efficiency of the display device (10) can be prevented from deteriorating.

[0166] In one embodiment, by including a filling layer (LRF) disposed between a wavelength conversion layer (WCL) and a color filter layer (CFL), the front-side luminance ratio of the display device (10) can be increased and the front-side luminance efficiency can be prevented from deteriorating.

[0167] Meanwhile, a color filter layer (CFL) may be placed on a wavelength conversion layer (WCL), and a counter substrate (TSUB) may be placed on the color filter layer (CFL).

[0168] The color filter layer (CFL) may include a first color filter (350), a second color filter (360), and a third color filter (370). In addition, it may include a first color pattern (355), a second color pattern (365), and a third color pattern (375).

[0169] The first color filter (350) is disposed between the counter substrate (TSUB) and the filling layer (LRF), and may be disposed to overlap the third light-emitting area (LA3). The first color filter (350) may be disposed to overlap the third light-emitting element (ED3) and the second wavelength conversion pattern (250). The first color pattern (355) may be disposed to be spaced apart from the first color filter (350) and to overlap the non-light-emitting area (NLA). The first color filter (350) may be in direct contact with the filling layer (LRF).

[0170] The first color filter (350) and the first color pattern (355) can selectively transmit the third color light (e.g., green light) and block or absorb the first color light (e.g., blue light) and the second color light (e.g., red light). In one embodiment, the first color filter (350) can be a green color filter and can include a green colorant such as a green dye or a green pigment. In this specification, the colorant is a concept that includes both a dye and a pigment.

[0171] The second color filter (360) is disposed between the counter substrate (TSUB) and the filling layer (LRF) and may overlap the second light-emitting area (LA2). The second color filter (360) may overlap the second light-emitting element (ED2) and the first wavelength conversion pattern (240). In one embodiment, one side of the second color filter (360) may overlap the non-light-emitting area (NLA) and may overlap the adjacent first color filter (350). The other side of the second color filter (360) may overlap the non-light-emitting area (NLA) and may overlap the first color pattern (355). The second color pattern (365) may be disposed spaced apart from the second color filter (360) and overlapping the non-light-emitting area (NLA). The second color pattern (365) may be disposed overlapping the first color filter (350) in the non-light-emitting area (NLA). The second color filter (360) can be in direct contact with the charging layer (LRF).

[0172] The second color filter (360) and the second color pattern (365) can selectively transmit light of a second color (e.g., red light) and block or absorb light of a first color (e.g., blue light) and light of a third color (e.g., green light). For example, the second color filter (360) can be a red color filter and can include a red coloring material such as a red dye or a red pigment.

[0173] The third color filter (370) is disposed between the counter substrate (TSUB) and the filling layer (LRF) and may overlap the first light-emitting area (LA1). The third color filter (370) may overlap the first light-emitting element (ED1) and the light-transmitting pattern (230). In one embodiment, one side of the third color filter (370) may overlap the non-light-emitting area (NLA) and may overlap the adjacent second color filter (360). In addition, the other side of the third color filter (370) may overlap the non-light-emitting area (NLA) and may overlap the adjacent first color filter (350) and the second color pattern (365). The third color pattern (375) may be disposed spaced apart from the third color filter (370) and overlapping the non-light-emitting area (NLA). The third color pattern (375) may be arranged to overlap the second color filter (360) in the non-luminous area (NLA). The third color filter (370) and the third color pattern (375) may be in direct contact with the filling layer (LRF).

[0174] The third color filter (370) can selectively transmit light of a first color (e.g., blue light) and block or absorb light of a second color (e.g., red light) and light of a third color (e.g., green light). For example, the third color filter (370) can be a blue color filter and can include a blue coloring material such as a blue dye or a blue pigment.

[0175] As described above, the first to third color filters (350, 360, 370) and the first to third color patterns (355, 365, 375) may overlap in the non-emissive area (NLA) to block or absorb light. For example, the first color pattern (355), the second color filter (360), and the third color filter (370) may overlap in the non-emissive area (NLA) arranged on one side of the second emissive area (LA2), and the first color filter (350), the second color filter (360), and the third color pattern (375) may overlap in the non-emissive area (NLA) arranged on the other side of the second emissive area (LA2).

[0176] As described above, the display device (10) according to one embodiment includes a filling layer (LRF) disposed between a wavelength conversion layer (WCL) and a color filter layer (CFL), thereby increasing the front-side luminance ratio of the display device (10) and preventing a decrease in front-side luminance efficiency.

[0177] Hereinafter, a method for manufacturing a display device (10) according to an embodiment illustrated in the above-described FIG. 5 will be described.

[0178] Figures 7 to 9 are cross-sectional views showing a manufacturing method of a display device according to one embodiment, step by step.

[0179] Referring to Fig. 7, a plurality of switching elements (T1, T2, T3), a plurality of light-emitting elements (ED1, ED2, ED3), first and second insulating layers (120, 130), and a pixel defining film (150) are formed on a substrate (SUB) to form a light-emitting element layer (EML). A first encapsulating inorganic film (171), an encapsulating organic film (173), and a second encapsulating inorganic film (175) are formed on the light-emitting element layer (EML) to form a thin film encapsulating layer (TFEL).

[0180] The light emitting element layer (EML) and the thin film encapsulation layer (TFEL) disposed on the substrate (SUB) can be formed by depositing materials constituting each layer, such as metal materials, and patterning them using a mask. In addition, the first and second insulating layers (120, 130) and the pixel defining film (150) can be formed by applying materials constituting each layer, such as insulating materials, or by patterning them using a mask, as needed. The description of the structure of the plurality of layers disposed on the substrate (SUB) is the same as described above, and thus, a detailed description thereof will be omitted.

[0181] Next, a bank (180) is patterned on a thin film encapsulation layer (TFEL), a light transmission pattern (230), a first wavelength conversion pattern (240), and a second wavelength conversion pattern (250) are formed between the banks (180), and a capping layer (300) is laminated to form a wavelength conversion layer (WCL).

[0182] Next, referring to FIG. 8, a first color filter material is applied and patterned on a counter substrate (TSUB) to form a first color filter (350) and a first color pattern (355). Next, a second color filter material is applied and patterned on the counter substrate (TSUB) to form a second color filter (360) and a second color pattern (365). Then, a third color filter material is applied and patterned on the counter substrate (TSUB) to form a third color filter (370) and a third color pattern (375), thereby forming a color filter layer (CFL).

[0183] Next, referring to FIG. 9, a filling material layer (LRFL) is formed by applying a filling material on a substrate (SUB) on which a wavelength conversion layer (WCL) is formed. The filling material layer (LRFL) can be formed using a solution process, such as spin coating, slit coating, inkjet printing, etc. In the present embodiment, the filling material layer (LRFL) is formed on the substrate (SUB), but this is not limited thereto, and the filling material layer (LRFL) can also be formed on a counter substrate (TSUB).

[0184] Next, the counter substrate (TSUB) is aligned on the substrate (SUB). At this time, the counter substrate (TSUB) is aligned so that the color filter layer (CFL) faces the substrate (SUB). Then, the counter substrate (TSUB) and the substrate (SUB) are pressed to bond them together. When bonding the counter substrate (TSUB) and the substrate (SUB), the first color filter (350) corresponds to the third light-emitting area (LA3), the second color filter (360) corresponds to the second light-emitting area (LA2), and the third color filter (370) corresponds to the first light-emitting area (LA1).

[0185] Next, depending on the material of the charging material layer (LRFL), the charging material layer (LRFL) is cured by irradiating it with UV light or applying heat to form a charging layer (LRF). Accordingly, a display device (10) in which the charging layer (LRF) is positioned between a substrate (SUB) and a counter substrate (TSUB) can be manufactured.

[0186] Hereinafter, a display device (10) according to another embodiment will be described with reference to another drawing.

[0187] Fig. 10 is a cross-sectional view showing a display device according to another embodiment. Fig. 11 is a plan view showing each light-emitting area of ​​the display device of Fig. 10. Fig. 12 is a cross-sectional view showing an example of a dam structure according to one embodiment. Fig. 13 is a cross-sectional view showing another example of a dam structure according to one embodiment. Fig. 14 is a cross-sectional view showing still another example of a dam structure according to one embodiment.

[0188] Referring to FIGS. 10 to 14, the present embodiment is different from the embodiments of FIGS. 5 to 9 described above in that it further includes a dam structure (DAM) disposed between a wavelength conversion layer (WCL) and a color filter layer (CFL), and the color filter layer (CFL) further includes an overcoat layer (OC). Hereinafter, descriptions overlapping with the above-described embodiments will be omitted, and the differences will be described.

[0189] The display device (10) may include a substrate (SUB), a light emitting element layer (EML), a thin film encapsulation layer (TFEL), a wavelength conversion layer (WCL), a filling layer (LRF), a dam structure (DAM), a color filter layer (CFL), and a counter substrate (TSUB).

[0190] The color filter layer (CFL) may further include an overcoat layer (OC). The overcoat layer (OC) may be arranged to cover the first to third color filters (350, 360, 370) and the third color pattern (375). The overcoat layer (OC) may flatten the lower portion of the color filter layer (CFL) to improve the reliability of bonding with the substrate (SUB).

[0191] The overcoat layer (OC) may be composed of an organic material. For example, the overcoat layer (OC) may include an acrylic resin, a methacrylate resin, a polyisoprene, an imide resin, a vinyl resin, an epoxy resin, a urethane resin, a cellulose resin, a perylene resin, and the like.

[0192] A dam structure (DAM) may be disposed between a wavelength conversion layer (WCL) and a color filter layer (CFL). The dam structure (DAM) is disposed directly on the capping layer (300) of the wavelength conversion layer (WCL) and may be in direct contact with the overcoat layer (OC) of the color filter layer (CFL). The dam structure (DAM) may maintain a gap between the substrate (SUB) and the counter substrate (TSUB). For example, the dam structure (DAM) may maintain a gap between the capping layer (300) and the overcoat layer (OC).

[0193] In one embodiment, the dam structure (DAM) may be disposed on light-emitting regions among the light-emitting regions having a light conversion rate of 50% or less. Here, the light conversion rate may refer to the rate at which light emitted from each light-emitting element is converted in the wavelength conversion layer (WCL). For example, the first light-emitting region (LA1) has a light-transmitting pattern (230) disposed thereon, so that light emitted from the first light-emitting element (ED1) is not converted. That is, since the light conversion rate of the first light-emitting region (LA1) is 0%, the dam structure (DAM) may be disposed on the first light-emitting region (LA1). If the light conversion rate of light converted through the wavelength conversion pattern in another light-emitting region is 50% or less, the dam structure (DAM) may also be disposed in the corresponding light-emitting region.

[0194] A light-emitting area having a light conversion rate of 50% or less may have a disadvantage in terms of lateral luminance. For example, light emitted from the first light-emitting element (ED1) of the first light-emitting area (LA1) may have relatively low lateral luminance because it is transmitted directly through the light-transmitting pattern (230). On the other hand, light emitted from the second light-emitting element (ED2) of the second light-emitting area (LA2) is converted by the first wavelength shifter (245) of the first wavelength conversion pattern (240) and emits Lambertian light. As a result, the second light-emitting area (LA2) may exhibit the same luminance regardless of the angle at which the observer views it, so the lateral luminance may be relatively high.

[0195] In this embodiment, the dam structure (DAM) has a high refractive index as described below, thereby dispersing light laterally, thereby improving the brightness ratio of the front side of the first light-emitting area (LA1) having a light conversion rate of 50% or less.

[0196] The dam structure (DAM) may be arranged to overlap the first light-emitting area (LA1) and not overlap the second and third light-emitting areas (LA2, LA3). The dam structure (DAM) may be arranged to overlap the non-light-emitting area (NLA) to prevent the light characteristics of the second and third light-emitting areas (LA2, LA3) from being affected. The dam structure (DAM) may be arranged to overlap the pixel defining film (150) of the light-emitting element layer (EML) and the bank (180) of the wavelength conversion layer (WCL). In addition, the dam structure (DAM) may be arranged to overlap the first light-emitting element (ED1) of the light-emitting element layer (EML), the light-transmitting pattern (230) of the wavelength conversion layer (WCL), and the third color filter (370).

[0197] The refractive index of the dam structure (DAM) may be 1.5 to 2. The refractive index of the dam structure (DAM) may be higher than that of the filler layer (LRF). If the refractive index of the dam structure (DAM) is 1.5 or higher, the light emitted through the light-transmitting pattern (230) in the first light-emitting area (LA1) can be refracted laterally, thereby increasing the front-side luminance ratio. If the refractive index of the dam structure (DAM) is 2 or lower, the front-side luminance can be prevented from being relatively lowered.

[0198] The thickness of the dam structure (DAM) may be 0.1 to 4.5 μm. If the thickness of the dam structure (DAM) is 0.1 μm or more, the light emitted from the first light-emitting area (LA1) can be refracted laterally, thereby improving the brightness ratio of the front side. If the thickness of the dam structure (DAM) is 4.5 μm or less, the gap of the display device (10) can be prevented from increasing, thereby enabling the implementation of a thin display device (10).

[0199] The area of ​​the upper surface of the dam structure (DAM) may be greater than or equal to 60% of the area of ​​the lower surface. For example, the area of ​​the upper surface of the dam structure (DAM) may be less than, equal to, or greater than the area of ​​the lower surface. In an exemplary embodiment, the area of ​​the upper surface of the dam structure (DAM) may be from 60% to 1000% of the area of ​​the lower surface. However, the present invention is not limited thereto. The cross-sectional shape of the dam structure (DAM) may be symmetrical or asymmetrical. For example, the cross-sectional shape of the dam structure (DAM) may be a regular trapezoid, an inverted trapezoid, or a rectangle.

[0200] The taper angle of the dam structure (DAM) may be from 20° to 170°. Preferably, the taper angle of the dam structure (DAM) may be from 40° to 130°. The area of ​​the upper surface of the dam structure (DAM) may be from 60% to 1000% of the area of ​​the lower surface of the dam structure (DAM).

[0201] Figures 12 to 14 show examples of various shapes of dam structures (DAM).

[0202] Referring to Fig. 12, the dam structure (DAM) may have an upper surface area of ​​60% or more and less than 100% of the lower surface area of ​​the dam structure (DAM). In this case, the cross-sectional shape of the dam structure (DAM) may be a regular trapezoid, and the taper angle (θ) may be an acute angle.

[0203] Referring to Fig. 13, the area of ​​the upper surface of the dam structure (DAM) may be 100% of the area of ​​the lower surface. In other words, the area of ​​the upper surface and the area of ​​the lower surface of the dam structure (DAM) may be the same. In this case, the cross-sectional shape of the dam structure (DAM) may be rectangular, and the taper angle (θ) may be a right angle.

[0204] Referring to Fig. 14, the dam structure (DAM) may have an upper surface area of ​​100% or more and 1000% or less of the lower surface area of ​​the dam structure (DAM). In this case, the cross-sectional shape of the dam structure (DAM) may be an inverse trapezoid, and the taper angle (θ) may be an obtuse angle.

[0205] Meanwhile, the charging layer (LRF) may be arranged in the remaining area of ​​the wavelength conversion layer (WCL) excluding the dam structure (DAM). For example, the charging layer (LRF) may be arranged between the dam structures (DAM). The charging layer (LRF) may be arranged to overlap the second light-emitting area (LA2) and the third light-emitting area (LA3), and not to overlap the first light-emitting area (LA1) and the non-light-emitting area (NLA).

[0206] The charging layer (LRF) is arranged to overlap the second light-emitting area (LA2) and the third light-emitting area (LA3), thereby allowing the light emitted from the second light-emitting area (LA2) and the third light-emitting area (LA3) to be totally reflected, thereby improving the front luminance efficiency.

[0207] The filling layer (LRF) may include a filling resin (FR) and filling particles (FP) dispersed in the filling resin (FR), as in the embodiments of FIGS. 5 to 9 described above, or the filling resin (FR) may include a silicone compound. In addition, the filling layer (LRF) may include vacuum, nitrogen, or an inert gas (e.g., neon). That is, the filling layer (LRF) may be formed with a vacuum between the dam structure (DAM), or may be filled with nitrogen or an inert gas.

[0208] As described above, the display device (10) according to one embodiment can improve the luminance ratio of the front side of the light-emitting region by including a dam structure (DAM) arranged in a light-emitting region having a light conversion rate of 50% or less. In addition, the dam structure (DAM) can also be arranged in a non-light-emitting region (NLA) to act as a spacer that maintains a gap between the substrate (SUB) and the counter substrate (TSUB).

[0209] Meanwhile, the dam structure (DAM) can be arranged in various ways under the condition of overlapping with the luminescent area with a light conversion rate of 50% or less.

[0210] FIGS. 15 and 16 are drawings showing other examples of a display device according to one embodiment.

[0211] As illustrated in FIG. 15, the dam structure (DAM) may be arranged to overlap the first light-emitting area (LA1) and not overlap the second light-emitting area (LA2), the third light-emitting area (LA3), and the non-light-emitting area (NLA).

[0212] Additionally, as shown in Fig. 16, the dam structure (DAM) may overlap with the first light-emitting area (LA1) and the non-light-emitting area (NLA) that is in contact with the first light-emitting area (LA1). Additionally, the dam structure (DAM) may be arranged so as not to overlap with the second light-emitting area (LA2), the third light-emitting area (LA3), and the non-light-emitting area (NLA) that is arranged between the second light-emitting area (LA2) and the third light-emitting area (LA3).

[0213] Fig. 17 is a cross-sectional view showing a display device according to another embodiment.

[0214] Referring to FIG. 17, this embodiment is different from the embodiment of FIG. 15 described above in that a filling layer (LRF) is placed between a dam structure (DAM) and a color filter layer (CFL), and an overcoat layer (OC) is omitted.

[0215] A dam structure (DAM) may be disposed on a wavelength conversion layer (WCL), and a filling layer (LRF) may be disposed on the wavelength conversion layer (WCL) and the dam structure (DAM). The filling layer (LRF) may be disposed to cover the dam structure (DAM). Since the dam structure (DAM) is disposed on the first light-emitting area (LA1), a portion of the light emitted from the first light-emitting area (LA1) may first reach the dam structure (DAM) and be refracted laterally, and the light passing through the dam structure (DAM) may reach the filling layer (LRF). In other words, since a portion of the light is refracted laterally in the dam structure (DAM), even if the filling layer (LRF) is disposed on the dam structure (DAM), it may not affect the increase in the brightness ratio of the front side.

[0216] The dam structure (DAM) can be spaced apart from the color filter layer (CFL) and can be in non-contact. Accordingly, since the dam structure (DAM) is not affected by the step of the color filter layer (CFL), the overcoat layer (OC) of the color filter layer (CFL) can be omitted.

[0217] In this embodiment, the overcoat layer (OC) can be omitted to simplify the structure and facilitate the process.

[0218] Fig. 18 is a cross-sectional view showing a display device according to another embodiment. Fig. 19 is a plan view showing light-emitting areas of the display device of Fig. 18.

[0219] Referring to FIGS. 18 and 19, this embodiment differs from the embodiment of FIG. 10 described above in that it further includes a fourth light-emitting area (LA4) that emits white light, including a fourth switching element (T4) and a fourth light-emitting element (ED4).

[0220] The fourth light-emitting region (LA4) may include a fourth switching element (T4) and a fourth light-emitting element (ED4) on the substrate (SUB). The first to fourth light-emitting elements (ED1, ED2, ED3, ED4) may emit white light as source light. The white light emitted from the light-emitting element layer (EML) may be red, green, blue, and white light emitted from the wavelength conversion layer (WCL).

[0221] Specifically, the wavelength conversion layer (WCL) may include a third wavelength conversion pattern (270) disposed in the first light-emitting area (LA1) to convert white light into blue, and a light-transmitting pattern (230) disposed in the fourth light-emitting area (LA4) to transmit white light as is.

[0222] The third wavelength conversion pattern (270) is positioned on the thin film encapsulation layer (TFEL) and can overlap the first light-emitting area (LA1). The third wavelength conversion pattern (270) can convert or shift the peak wavelength of incident light into light of another specific peak wavelength and emit the light. In one embodiment, the third wavelength conversion pattern (270) can convert the source light provided from the first light-emitting element (ED1) into blue light in the range of about 440 nm to about 480 nm and emit the converted light.

[0223] The third wavelength conversion pattern (270) may include a fourth base resin (271) and a third wavelength shifter (275) dispersed within the fourth base resin (271), and may further include a fourth scatterer (273) dispersed within the fourth base resin (271).

[0224] The fourth base resin (271) may be formed of a material with high light transmittance. In one embodiment, the fourth base resin (271) may be formed of an organic material. The fourth base resin (271) may be formed of the same material as the first base resin (231), or may include at least one of the materials exemplified as constituent materials of the first base resin (231).

[0225] The third wavelength shifter (275) can convert or shift the peak wavelength of incident light to another specific peak wavelength. In one embodiment, the third wavelength shifter (275) can convert white source light into blue light having a peak wavelength in the range of 440 nm to 480 nm.

[0226] Examples of the third wavelength shifter (275) include quantum dots, quantum rods, or fluorescent materials. A more detailed description of the third wavelength shifter (275) is omitted as it is substantially the same as or similar to that described above in the description of the first wavelength shifter (245).

[0227] The fourth scatterer (273) may have a different refractive index than the fourth base resin (271) and may form an optical interface with the fourth base resin (271). For example, the fourth scatterer (273) may be a light scattering particle. A detailed description of the fourth scatterer (273) is omitted as it is substantially the same as or similar to the description of the second scatterer (243).

[0228] Some of the source light may not be converted into blue light by the third wavelength shifter (275) and may pass through the third wavelength conversion pattern (270). However, the light that is not converted into blue light may be blocked by the color filter layer (CFL). On the other hand, the blue light converted by the third wavelength conversion pattern (270) among the source light may pass through the color filter layer (CFL) and be emitted to the outside.

[0229] The light transmitting pattern (230) arranged in the fourth light emitting area (LA4) is identical to the light transmitting pattern (230) described above, and therefore, its description is omitted. In the light transmitting pattern (230), white light emitted from the fourth light emitting element (ED4) can be transmitted and emitted as is.

[0230] The color filter layer (CFL) may include an opening (OP) in an area corresponding to the fourth light-emitting area (LA4). Since the fourth light-emitting area (LA4) is an area where white light is emitted, white light can be emitted as is through the opening (OP) without any other color filters being placed.

[0231] Meanwhile, the dam structure (DAM) may be arranged to overlap the fourth light-emitting region (LA4) and not overlap the first to third light-emitting regions (LA1, LA2, LA3). The dam structure (DAM) may be arranged to overlap the non-light-emitting region (NLA) to prevent the light characteristics of the first to third light-emitting regions (LA1, LA2, LA3) from being affected. In addition, the dam structure (DAM) may be arranged to overlap the fourth light-emitting element (ED4) of the light-emitting element layer (EML), the light-transmitting pattern (230) of the wavelength conversion layer (WCL), and the opening (OP).

[0232] In one embodiment, the dam structure (DAM) may be disposed in the fourth light-emitting area (LA4) among the light-emitting areas having a light conversion rate of 50% or less. The fourth light-emitting area (LA4) has a light-transmitting pattern (230) disposed thereon so that light emitted from the fourth light-emitting element (ED4) is not converted. Since the fourth light-emitting area (LA4) may have a disadvantage in terms of lateral luminance, the dam structure (DAM) may be disposed to disperse the light laterally, thereby improving the lateral luminance ratio of the fourth light-emitting area (LA4) having a light conversion rate of 50% or less.

[0233] Hereinafter, a simulation example for the above-described display device (10) will be described.

[0234] <Simulation 1>

[0235] A display device (10) including a filling layer (LRF) as shown in Fig. 5 was configured, and changes in white efficiency and lateral luminance ratio according to the refractive index of the filling layer (LRF) and BT2020 color matching rate according to the refractive index and thickness of the filling layer (LRF) were simulated. The filling layer was configured to include hollow silica particles.

[0236] Figure 20 is a graph showing white efficiency and lateral luminance ratio according to the refractive index of the charging layer. In Figure 20, the horizontal axis represents the refractive index of the charging layer, the left vertical axis represents white efficiency, and the right vertical axis represents the lateral luminance ratio.

[0237] Referring to Fig. 20, as the refractive index of the filling layer (LRF) increased, the white efficiency decreased, and as the refractive index of the filling layer (LRF) increased, the brightness ratio on the front side increased.

[0238] Through this result, it was confirmed that by providing a filling layer (LRF) with a refractive index range of 1.05 to 1.4, it is possible to improve the brightness ratio on the front side while securing a white efficiency of 100% or more of the display device (10).

[0239] Figure 21 is a graph showing the BT2020 color matching rate according to the refractive index and thickness of the filling layer. In Figure 21, the horizontal axis represents the refractive index of the filling layer, and the vertical axis represents the BT20202 color matching rate. In addition, in Figure 21, simulations were performed with the thickness of the filling layer varying from 1.6 μm to 3.0 μm and 4.5 μm, respectively. BT2020 is a next-generation standard color space approved by the International Telecommunication Union (ITU).

[0240] Referring to Fig. 21, when the refractive index of the filling layer is in the range of 1.05 to 1.4, the BT2020 color matching rate increases as the refractive index of the filling layer (LRF) increases. In addition, when the thickness of the filling layer (LRF) is 1.6 µm, 3.0 µm, and 4.5 µm, respectively, the BT2020 color matching rate increases as the refractive index of the filling layer (LRF) increases.

[0241] Through these results, it was confirmed that the BT2020 color matching rate of the display device (10) can be improved by having a filling layer (LRF) having a refractive index range of 1.05 to 1.4 and a thickness range of 4.5 ㎛ or less.

[0242] Simulation 2

[0243] The display device (10) shown in Fig. 5 was configured, and at this time, the refractive index of the filling layer (LRF) was set to 1. The brightness ratio at the front side according to the angle of the red light-emitting area (LA2), the green light-emitting area (LA3), and the blue light-emitting area (LA1) of the display device (10) was simulated, and the front brightness and white efficiency were simulated. In addition, after providing a dam structure with a refractive index of 1.5 in the blue light-emitting area as shown in Fig. 10, the brightness ratio at the front side according to the angle of the blue light-emitting area (LA1) was simulated, and the front brightness and white efficiency were simulated.

[0244] The simulation results of the front-side luminance ratio according to the above angle are shown in the graph of Fig. 22, and the simulation results of the front-side luminance and white efficiency are shown in Table 1 below.

[0245] Fig. 22 is a graph showing the luminance ratio of the normal side of each light-emitting region according to the angle. In Fig. 22, the horizontal axis represents the angle at which the normal side luminance ratio is measured, and the vertical axis represents the normal side luminance ratio. In addition, LR(n=1.0) R represents the luminance ratio of the normal side of the red light-emitting region with a filling layer applied thereon, LR(n=1.0) G represents the luminance ratio of the normal side of the green light-emitting region with a filling layer applied thereon, LR(n=1.0) B represents the luminance ratio of the normal side of the blue light-emitting region with a filling layer applied thereon, and HR(n=1.5) B represents the luminance ratio of the normal side of the blue light-emitting region with a dam structure applied thereon.

[0246] Referring to Figure 22, when a filling layer with a refractive index of 1.0 was applied to the red, green, and blue emission regions, the luminance ratio at the front side decreased as the angle increased. In addition, when a dam structure with a refractive index of 1.5 was applied to the blue emission region, the luminance ratio at the front side increased compared to when a filling layer with a refractive index of 1.0 was applied to the blue emission region.

[0247] In the blue emission region, the source light of the light-emitting element is not photoconverted in the wavelength conversion layer and is still transmitted, so the lateral luminance ratio is relatively lower than that of the red and green emission regions. Therefore, it can be seen that the lateral luminance ratio can be improved by arranging a dam structure over the blue emission region to refract the light laterally.

[0248] White efficiency (%) of the display device of the front luminance (%) of the blue light-emitting area of ​​the dam structure (%) None 106.2 108.3 Yes 98.7 107.8

[0249] Referring to Table 1 above, when the dam structure was placed on the blue light-emitting area, the frontal luminance decreased by about 7.5% and the white efficiency decreased by about 0.5% compared to when the filling layer was placed on the blue light-emitting area. Through these results, it was confirmed that when the dam structure was placed on the blue light-emitting area, a similar white efficiency was maintained, but the frontal efficiency was reduced. In connection with Fig. 22, it was confirmed that when the dam structure was placed on the blue light-emitting area, the white efficiency was maintained at the same level, while the frontal luminance ratio could be increased.

[0250] Simulation 3

[0251] A display device (10) including a dam structure (DAM) as shown in Fig. 10 was constructed, and the white efficiency of the display device according to the taper angle of the dam structure (DAM) was simulated. The white efficiency of the display device (10) including the filling layer (LRF) as shown in Fig. 5 was provided as a comparative example with 100% as the standard, and #1 represents the white efficiency of the display device when the taper angle of the dam structure is 80°, #2 represents the taper angle of the dam structure is 90°, and #3 represents the white efficiency of the display device when the taper angle of the dam structure is 100°.

[0252] Figure 23 is a graph showing the white efficiency of the display device according to the taper angle of the dam structure.

[0253] Referring to Figure 23, when the taper angle of the dam structure was 80°, the white efficiency was 102.8%, when it was 90°, the white efficiency was 107.8%, and when it was 100°, the white efficiency was 107.7%.

[0254] Through these results, it was confirmed that the white efficiency of the display device was significantly increased compared to the comparative example when the taper angle of the dam structure was 80° or more.

[0255] Although embodiments of the present invention have been described with reference to the attached drawings, those skilled in the art will appreciate that the present invention can be implemented in other specific forms without altering the technical spirit or essential characteristics of the present invention. Therefore, the embodiments described above should be understood to be illustrative in all respects and not restrictive.

Claims

1. A light-emitting element layer arranged on a substrate; A thin film encapsulation layer disposed on the light emitting element layer; A wavelength conversion layer disposed on the thin film encapsulation layer and including a bank that divides light-emitting regions and non-light-emitting regions; A dam structure disposed on the wavelength conversion layer and overlapping one of the light-emitting regions; A filling layer disposed on the wavelength conversion layer and between the dam structures; A color filter layer arranged on the above dam structure; and A counter substrate is included, which is arranged on the color filter layer. A display device in which the above-mentioned charging layer overlaps with the remaining light-emitting areas among the above-mentioned light-emitting areas that do not overlap with the dam structure.

2. In paragraph 1, A display device in which the light-emitting region overlapping the above dam structure has a light conversion rate of 50% or less in the wavelength conversion layer.

3. In paragraph 1, The above-described light-emitting regions include a first light-emitting region that emits blue light, a second light-emitting region that emits red light, and a third light-emitting region that emits green light, The above dam structure is a display device overlapping the first light-emitting area.

4. In paragraph 3, A display device in which the charging layer overlaps the second light-emitting area and the third light-emitting area.

5. In paragraph 1, The above dam structure is a display device that does not overlap with the above non-luminous area.

6. In paragraph 1, A display device in which the above dam structure overlaps the non-luminous region adjacent to the overlapping luminous region and does not overlap the non-luminous region spaced apart from the overlapping luminous region.

7. In paragraph 1, The above dam structure is a display device overlapping the above non-luminous area.

8. In paragraph 1, A display device having a refractive index of the above dam structure greater than the refractive index of the above filling layer.

9. In paragraph 1, A display device having a refractive index of the above dam structure of 1.5 to 2.

10. In paragraph 1, A display device having a refractive index of the above-mentioned charging layer of 1.05 to 1.

4.

11. In paragraph 1, An indicator device wherein the thickness of the above dam structure is less than or equal to the thickness of the filling layer.

12. In paragraph 1, A display device wherein the thickness of the above dam structure and the thickness of the above filling layer are each 0.1 to 4.5 ㎛.

13. In paragraph 1, The above color filter layer includes a plurality of color filters and an overcoat layer covering the plurality of color filters, A display device in which the above dam structure and the above filling layer are in contact with the above overcoat layer.

14. In paragraph 1, A display device, wherein the wavelength conversion layer includes a light transmitting pattern overlapping the dam structure, and a first wavelength conversion pattern and a second wavelength conversion pattern overlapping the filling layer.

15. In paragraph 1, A display device in which the charging layer overlaps the light-emitting areas and covers the dam structure.

16. In paragraph 15, A display device in which the charging layer is in contact with the color filter layer, and the dam structure is spaced apart from the color filter layer.

17. In paragraph 1, A display device wherein the above-mentioned filling layer comprises a filling resin and filling particles dispersed in the filling resin, or comprises a silicon compound, or comprises vacuum, nitrogen or an inert gas.

18. A light-emitting element layer arranged on a substrate; A thin film encapsulation layer disposed on the light emitting element layer; A wavelength conversion layer disposed on the thin film encapsulation layer and including a bank that divides light-emitting regions and non-light-emitting regions; A dam structure disposed on the wavelength conversion layer and overlapping a light-emitting region among the light-emitting regions in the wavelength conversion layer having a light conversion rate of 50% or less; A filling layer disposed on the wavelength conversion layer and between the dam structures; A color filter layer arranged on the above dam structure; and A display device including a counter substrate disposed on the color filter layer.

19. In paragraph 18, The above-described light-emitting regions include a first light-emitting region that emits blue light, a second light-emitting region that emits red light, and a third light-emitting region that emits green light, The above dam structure is a display device overlapping the first light-emitting area.

20. In paragraph 18, The above light-emitting regions include a first light-emitting region that emits blue, a second light-emitting region that emits red, a third light-emitting region that emits green, and a fourth light-emitting region that emits white. The above dam structure is a display device overlapping the fourth light-emitting area.

21. In paragraph 18, An indicator device wherein the taper angle of the above dam structure is 20° to 170°.

22. In paragraph 18, The above dam structure is a display device whose upper surface area is 60% to 1000% of the lower surface area.

23. A light-emitting element layer arranged on a substrate; A thin film encapsulation layer disposed on the light emitting element layer; A wavelength conversion layer disposed on the above thin film encapsulation layer; A charging layer disposed on the wavelength conversion layer; A color filter layer disposed on the above charging layer; and A counter substrate is included, which is arranged on the color filter layer. A display device wherein the refractive index of the above-mentioned filling layer is 1.05 to 1.4, and the thickness of the above-mentioned filling layer is 0.1 to 4.5 ㎛.

24. In paragraph 23, A display device in which the charging layer is disposed between the wavelength conversion layer and the color filter layer, and contacts the wavelength conversion layer and the color filter layer, respectively.

25. In paragraph 23, A display device wherein the above-mentioned filling layer comprises a filling resin and filling particles dispersed in the filling resin, or comprises a silicone compound.

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