Method for manufacturing semiconductor light-receiving element

Abstract

A plurality of semiconductor light-receiving elements (2) are formed on a wafer-form semiconductor substrate (1). A wafer test is performed for inspecting electrical characteristics of each of the plurality of semiconductor light-receiving elements (2). An ink (22) is applied to the semiconductor light receiving element (2) that has failed in the wafer test. When forming the semiconductor light-receiving element (2), a semiconductor layer (4) having at least a light absorbing layer (8) is formed on the semiconductor substrate (1), an annular upper surface electrode (13) in which a light receiving part (12) is opened is formed on the semiconductor layer (4), and a first groove (15) and a second groove (16) penetrating the semiconductor layer (4) and reaching the semiconductor substrate (1) are formed. The first groove (15) surrounds the upper surface electrode (13) in plan view. The second groove (16) surrounds the first groove (15) in plan view.

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