Method of producing an optoelectronic component

Abstract

A method of producing an optoelectronic component (1) comprises the following method steps. A plurality of optoelectronic semiconductor chips (4) is arranged at a top side (3) of a carrier (2). The optoelectronic semiconductor chips (4) are designed to emit electromagnetic radiation at their emission faces (5). A self-assembled monolayer (7) is arranged on the top side (3) of the carrier (2), wherein the emission faces (5) remain uncovered. A converter material (11) is arranged on the self-assembled monolayer (7) and on the emission faces (5). The converter material (11) and the self-assembled monolayer (7) are chosen with respect to wetting properties of the converter material such that a spontaneous dewetting of the converter material (11) takes place, wherein the converter material (11) dewets from the self-assembled monolayer (7) and only remains at the emission faces (5) of the optoelectronic semiconductor chips (4).

Description

[0001] METHOD OF PRODUCING AN OPTOELECTRONIC COMPONENT

[0002] DESCRIPTION

[0003] The present invention refers to a method of producing an optoelectronic component .

[0004] This patent application claims the priority of German patent application 10 2023 135 604 . 6 , the disclosure content of which is hereby incorporated by reference .

[0005] Optoelectronic components comprising a converter material with a phosphor which is designed to absorb electromagnetic radiation emitted by an optoelectronic semiconductor chip and to emit electromagnetic radiation of lower energy are known from the state of the art . During the production of multiple optoelectronic components , the converter material has to be removed in regions between the optoelectronic semiconductor chips in order to separate them and to singulate the optoelectronic components i f the converter is applied over the whole area of a wafer initially .

[0006] Especially with regard to lateral dimensions of optoelectronic semiconductor chips becoming ever smaller, conventional separation processes such as mechanical sawing are no longer suitable in terms of process costs , a process or an edge quality and dimensional tolerances . An alternative laser cutting process can lead to damage to the phosphor particles , even outside the area of separation and within the lightemitting surfaces of the optoelectronic semiconductor chips . Furthermore , residues arise , especially from a matrix material of the converter material embedding the phosphor and e . g . , a saw blade , which can contaminate the light-emitting surfaces and thus lead to a loss of brightness .

[0007] An obj ective of the present invention is to speci fy an improved method of producing an optoelectronic component . This obj ective is solved by a method of producing an optoelectronic component with the features of the independent claim . Advantageous embodiments are speci fied in the dependent claims .

[0008] A method of producing an optoelectronic component comprises the following method steps . A carrier comprising a top side is provided . A plurality of optoelectronic semiconductor chips is arranged at the top side of the carrier . The optoelectronic semiconductor chips comprise emission faces facing away from the top side of the carrier and are designed to emit electromagnetic radiation at their emission faces . A sel f-assembled monolayer is arranged on the top side of the carrier in regions surrounding the optoelectronic semiconductor chips laterally, wherein the emission faces of the optoelectronic semiconductor chips remain uncovered by the sel fassembled monolayer . A converter material comprising a phosphor designed to modi fy a wavelength of electromagnetic radiation emitted by the optoelectronic semiconductor chips is arranged on the sel f-assembled monolayer and on the emission faces of the optoelectronic semiconductor chips . The converter material and the sel f-assembled monolayer are chosen with respect to wetting properties of the converter material such that a spontaneous dewetting of the converter material takes place , wherein the converter material dewets from the sel f-assembled monolayer and only remains at the emission faces of the optoelectronic semiconductor chips .

[0009] A sel f-assembled monolayer ( SAM) is a monomolecular layer of a material arranged on a surface by spontaneous sel f-assembly due to an af finity to the surface . SAM- forming molecules comprises an anchoring group, a backbone and a terminating functional group . The anchoring group is designed to bind to a speci fic surface e . g . , by establishing a covalent bond to the surface . The backbone connects the anchoring group with the terminating functional group . The terminating functional group which is arranged at an opposite side of the backbone with respect to the anchoring group is designed to shield the surface and to provide di f ferent surface properties , when arranged within the SAM . The SAM properties can be actively influenced by material selection of each element of a SAM- forming molecule : the anchoring group, the backbone and the terminating functional group, whereby a huge variety of surface properties may be adj usted at a surface comprising a SAM . The sel f-assembly / organi zation process has a sel f-terminating character i . e . , as soon as all possible bond sites are occupied by the SAM- forming molecules , the monolayer structure formation is stopped . Advantageously, the monomolecular layer does not have to be removed after producing the optoelectronic component , as is the case of a photoresist , for examp 1 e .

[0010] The method is based on the idea to functionali ze the top side of the carrier in regions surrounding the optoelectronic semiconductor chips with a sel f-assembled monolayer and a subsequent deposition of the converter material basically over an entire area of the carrier, however not selectively, wherein a dewetting of the converter material takes place , such that the converter material is arranged only on the emission faces of the optoelectronic semiconductor chips . Initially, the converter material covers the sel f-assembled monolayer but dewets from it and remains only on the emission faces . There are therefore defined and limited areas at the top side of the carrier which are provided with the converter material .

[0011] Advantageously, the converter material does not have to be removed during a singulation process to separate the optoelectronic semiconductor chips as it is not arranged in regions between the optoelectronic semiconductor chips . Only a carrier material has to be removed i f a singulation shall be performed . However, in some cases it is not necessary to perform a singulation e . g . , when carrier is a flexible foil which is only used temporary for handling during a production process . Alternatively, singulation is not expedient i f e . g . , a display unit is produced comprising multiple optoelectronic semiconductor chips . In such cases a distance between the optoelectronic semiconductor chips parallel to the top side of the carrier can be kept very small by using the present method to arrange the converter material on the emission faces of the optoelectronic semiconductor chips . This is especially advantageous for miniaturi zing the optoelectronic component , especially in combination with optoelectronic semiconductor chips which are designed as micro light emitting diodes (p-LED) , whereby the optoelectronic component can be designed very compact .

[0012] When separation is performed using a laser, phosphor particles embedded into a matrix material of the converter material can be damaged i f the converter material has to be removed partially by the laser . These degraded phosphor particles can also occur in the periphery of separation lines / ar- eas . Advantageously, the phosphor is not damaged during singulation, as the converter material doesn' t have to be removed from the top side of the carrier . Since no converter material has to be removed, there are no contaminations from residues during removal . Advantageously, contaminations blocking the emission of electromagnetic radiation can be omitted .

[0013] In sum, an improved method for arranging the converter material is provided which provides the possibility to produce a high number of optoelectronic components or an optoelectronic component comprising a high number of optoelectronic semiconductor chips . Apart from that , electrical contact pads which can be arranged at the top side of the carrier and between the optoelectronic semiconductor chips remain uncovered by the converter material . Thus , di f ferent measurement can be performed during the production process . For example , a wavelength spectrum of an optoelectronic semiconductor chip can be measured between di f ferent method steps .

[0014] In an embodiment arranging the optoelectronic semiconductor chips is performed after arranging the sel f-assembled mono- layer on the top side of the carrier, whereby the sel f-assembled monolayer is only accessible in regions between the optoelectronic semiconductor chips . Advantageously, in this embodiment the emission faces of the optoelectronic semiconductor chips don' t need to be covered before arranging the SAM as they are arranged afterwards and onto the SAM partially, thus covering parts of the SAM . However, the accessible regions between the optoelectronic semiconductor chips are coated with the SAM .

[0015] In another embodiment arranging the optoelectronic semiconductor chips is performed before arranging the sel f-assembled monolayer on the top side of the carrier . Arranging the sel fassembled monolayer on the top side of the carrier in regions surrounding the optoelectronic semiconductor chips laterally, such that the emission faces of the optoelectronic semiconductor chips remain uncovered by the sel f-assembled mono- layer, comprises the following steps . The emission faces of the optoelectronic semiconductor chips are covered with a resist , while areas between the optoelectronic semiconductor chips remain free from the resist . The areas remaining free from the resist are coated with the sel f-assembled monolayer . The resist is removed from the emission faces . Advantageously, the resist protects the emission faces during SAM- f ormation .

[0016] In an embodiment covering the emission faces of the optoelectronic semiconductor chips with the resist is performed by arranging the resist over an entire area of the top side of the carrier and structuring the resist such that the resist remains at the emission faces of the optoelectronic semiconductor chips and is removed elsewhere or by arranging a hard mask over the top side of the carrier which only covers the emission faces of the optoelectronic semiconductor chips . Advantageously, in both cases very small areas can be covered by the resist , enabling the production of a compact optoelectronic component . The hard mask is designed to cover only the emission faces of the optoelectronic semiconductor chips and to leave areas in-between uncovered . In another embodiment arranging the optoelectronic semiconductor chips is performed before arranging the sel f-assembled monolayer on the top side of the carrier, wherein arranging the sel f-assembled monolayer on the top side of the carrier in regions surrounding the optoelectronic semiconductor chips laterally, such that the emission faces of the optoelectronic semiconductor chips remain uncovered by the sel f-assembled monolayer, comprises the following steps . The top side of the carrier and the emission faces are with the sel f-assembled monolayer . The sel f-assembled monolayer is removed from the emission faces of the optoelectronic semiconductor chips .

[0017] In an embodiment removing the sel f-assembled monolayer from the emission faces of the optoelectronic semiconductor chips is performed with a laser or by plasma etching . Advantageously, the SAM can be removed very easily and quickly due to its very low thickness which may e . g . , be only a few nanometres .

[0018] In an embodiment arranging the sel f-assembled monolayer is performed by immersion of the carrier into a solution of a monolayer- forming agent or by spray coating of the solution of the monolayer- forming agent on the top side of the carrier . Advantageously, this named procedures are very simple , don' t require speciali zed and advanced equipment and can be performed under normal conditions . Although the immersion into a solution or spray-coating with a solution can be performed easily and quickly well-ordered SAMs can be prepared, comprising at least an intended vertical order of anchoring group, backbone and terminating functional group, with the anchoring group binding to the top side of the carrier and the terminating functional facing away from the top side of the carrier . SAM- forming agents can be solved in a solution comprising alcohol , for example . However, a variety of di fferent organic solvents can be used .

[0019] In another embodiment arranging the sel f-assembled monolayer is performed by gas phase deposition . Advantageously, this method allows to prepare a SAM on initially oxidi zed and / or contaminated surfaces because oxidi zed and / or contaminated surfaces can be cleaned prior to the gas phase deposition of the SAM . In this case , at least a vacuum chamber is required . Additionally, a plasma etching technique can be required for cleaning the top side of the carrier . By cleaning the carrier chemisorbed and / or physisorbed species at the top side of the carrier can be removed . In addition, plasma etching can advantageously be used to activate a suf ficient number of binding centres for the anchoring groups which can be called plasma activation or plasma surface modi fication . The top side of the carrier can also be cleaned by rinsing prior to arranging the SAM . The carrier can also be cleaned by means of one of the mentioned methods before a wet-chemical deposition of the SAM, e . g . by immersion of the carrier . However, depending on the anchoring group, an oxidi zed top side of the carrier may be required for SAM- formation .

[0020] In an embodiment the carrier is heated during arranging the sel f-assembled monolayer . Advantageously, this enables the formation of highly ordered SAMs . Heating the carrier can be performed by heating the solution containing the SAM- forming agent or by heating the carrier in the vacuum chamber during gas phase deposition by using e . g . , a resistance heating element .

[0021] In an embodiment arranging the converter material is performed by spray coating . Due to a lack of raised structures , flat application methods for the converter material can be used such as spray coating or for example slot die casting . Current application processes such as stencil printing or squeegee application also benefit from this , enabling a more uni form layer thickness .

[0022] In an embodiment the sel f-assembled monolayer comprises an anchoring group designed to bind to the top side of the carrier, wherein the anchoring group is a thiol-group, a phos- phonic acid group or a trichlorosilane . Advantageously, thiols can establish a spontaneous bond to metals, while SAM- forming agents comprising a trichlorosilane bind to e.g., oxidized silicon substrates and a phosphonic acid group as an anchoring group can establish a bond to hydroxylated and / or oxidized species at surfaces such as e.g., titanium dioxide or zinc oxide surfaces.

[0023] In an embodiment the self-assembled monolayer comprises a terminating functional group linked by a backbone to the anchoring group and designed to determine surface properties of the self-assembled monolayer. The terminating functional group comprises a linear or branched alkyl group, a hydroxy group, a carboxylic acid or a linear or branched and at least partially fluorinated alkyl group. The terminating functional group can also comprise other compositions such as aromatic groups. The backbone can also comprise different functional groups and may be aliphatic or at least partially aromatic.

[0024] In an embodiment the carrier comprises one of the following materials or combinations at its top side: silicon, silicon dioxide, aluminium oxide, sapphire, titanium dioxide, zinc oxide, gold, silver, aluminium, polymer (foil) . Note, that the material which is present at the very top side of the carrier can be a part of a layer arranged at the top side. Thus, the method is not limited to certain SAM-forming agents as the surface to be coated with the SAM can be chosen. Also, chemisorbed and / or physisorbed species can be present at the very top side of the carrier if handled at normal conditions. However, a SAM comprises the advantage, that such contaminations can be replaced by the SAM. Additionally, the terminating functional group of a SAM can provide advantageous properties with respect to cleaning. For example, the top side of the carrier can be cleaned very effectively by rinsing with an organic solvent very effectively.

[0025] In an embodiment the converter material comprises polysiloxane, silicone or epoxide as a matrix material embedding the phosphor. For such a converter e.g., at least partially fluorinated SAM-forming agents can be used in order to induce a dewetting of the converter material from the SAM.

[0026] The above-described properties, features and advantages of this invention and the way in which they are achieved will become clearer and more clearly understood in association with the following description of the exemplary embodiments which are explained in greater detail in association with the drawings. Here in schematic illustration in each case:

[0027] Fig. 1: method steps of a method of producing an optoelectronic component;

[0028] Fig. 2: further method steps of a method of producing an optoelectronic component;

[0029] Fig. 3: a schematic part of a self-assembled monolayer in a side view;

[0030] Fig. 4A: self-assembled monolayers comprising a thiol anchoring group;

[0031] Fig. 4B: self-assembled monolayers comprising a trichlorosilane anchoring group;

[0032] Fig. 4C: self-assembled monolayers comprising a phosphonic acid anchoring group;

[0033] Fig. 4D: self-assembled monolayers comprising a phosphonic acid anchoring group and different terminating functional groups .

[0034] Fig. 1 and 2 both schematically show method steps of a method of producing an optoelectronic component 1. For each step, elements of the optoelectronic component 1 are shown in a top view on a top side 3 of a carrier 2 of the optoelectronic component 1. The carrier 2 is provided and a plurality of optoelectronic semiconductor chips 4 are arranged at the top side 3 of the carrier 2 as shown on the left side of Fig . 1 . The optoelectronic semiconductor chips 4 comprise emission faces 5 facing away from the top side 3 of the carrier 2 and are designed to emit electromagnetic radiation at their emission faces 5 .

[0035] The carrier 2 exemplarily comprises silicon and is designed as a wafer . At the top side 3 , the carrier 2 comprises silicon dioxide and possibly other oxidi zed and / or hydrogenated and / or hydroxylated species due to a handling at atmosphere . The carrier 2 can alternatively comprise silicon, aluminium oxide , sapphire , titanium dioxide , zinc oxide , gold, silver, aluminium, polymer ( foil ) . The carrier 2 can either consist of the named materials or comprise a layer of these materials arranged at the top side 3 of the carrier 2 . The carrier 2 can also comprise other typically used materials in the semiconductor fabrication at its top side 3 .

[0036] In a next step, the emission faces 5 of the optoelectronic semiconductor chips 4 are covered with a resist 6 , while areas between the optoelectronic semiconductor chips 4 remain free from the resist 5 , which is shown in the middle of Fig . 1 . Afterwards , areas uncovered by the resist 6 are coated with the sel f-assembled monolayer 7 , which is shown on the right side of Fig . 1 .

[0037] With reference to the left side of Fig . 2 , the resist 6 is removed from the emission faces 5 , whereby the emission faces 5 are uncovered again . Thus , the sel f-assembled monolayer 7 has been arranged on the top side 3 of the carrier 2 in regions surrounding the optoelectronic semiconductor chips 4 laterally, such that the emission faces 5 of the optoelectronic semiconductor chips 4 remain uncovered by the sel f-assembled monolayer 7 . Covering the emission faces 5 of the optoelectronic semiconductor chips 4 with the resist 6 can be performed by arranging the resist 6 over an entire area of the top side 3 of the carrier 2 and structuring the resist 6 such that the resist 6 remains at the emission faces 5 of the optoelectronic semiconductor chips 4 and is removed elsewhere . Alternatively, a hard mask can be arranged over the top side 3 of the carrier which covers only the emission faces 5 of the optoelectronic semiconductor chips 4 .

[0038] In the exemplary embodiment of the method according to Fig . 1 and 2 , arranging the optoelectronic semiconductor chips 4 is performed before arranging the sel f-assembled monolayer 7 on the top side 3 of the carrier 2 . In another embodiment , where arranging the optoelectronic semiconductor chips 4 is performed also before arranging the sel f-assembled monolayer 7 , the top side 3 of the carrier 2 and the emission faces 5 of the optoelectronic semiconductor chips 4 are coated with the sel f-assembled monolayer 7 . The sel f-assembled monolayer 7 is then removed from the emission faces 5 of the optoelectronic semiconductor chips e . g . , by irradiating the SAM 7 with a laser or by plasma etching . In this case , the resist 6 can be omitted .

[0039] In another embodiment arranging the optoelectronic semiconductor chips 4 can be performed after arranging the sel f-assembled monolayer 7 , whereby the sel f-assembled monolayer 7 is only accessible in regions between the optoelectronic semiconductor chips 4 . Again, the resist 6 can be omitted in contrast to the embodiment of Fig . 1 and 2 . However, in any case , the sel f-assembled monolayer 7 is arranged in regions surrounding the optoelectronic semiconductor chips 4 laterally such that the emission faces 5 of the optoelectronic semiconductor chips 4 remain uncovered by the sel f-assembled monolayer 7 . With reference to Fig . 3 , which schematically shows a part of a SAM 7 in a side view, main parts of s SAM 7 are describe more in detail in the following description .

[0040] The SAM 7 comprises molecules which comprise an anchoring group 8 , a backbone 9 and a terminating functional group 10 . The anchoring group 8 comprises an af finity to the top side 3 of the carrier 2 and is designed to establish a chemical bond at the top side 3 of the carrier 2 . Thus , the molecules are bound to the top side 3 allowing the formation of a monomo- lecular layer at the top side 3 of the carrier 2 .

[0041] The backbone 9 , which also can be called a linker 9 , is connecting the terminating functional group 10 with the anchoring group 8 . Thus , the terminating functional group 10 is arranged at an interface between the SAM 7 and an environment of the optoelectronic component 1 and determines the surface properties at the top side 3 of the carrier 2 . In the exemplary embodiment with a carrier 2 comprising silicon which is oxidi zed at the top side 3 , a SAM 7 is used which comprises as an example 1H, 1H, 2H, 2H- perl fuorodecyltrichlorosilane which is designed to bind to oxidi zed surfaces by a trichlorosilane anchoring group 8 . Furthermore , 1H, 1H, 2H, 2H- perl fuorodecyltrichlorosilane comprises an aliphatic backbone 9 which is partially fluorinated and a fluorinated terminating group 10 . The fluorination induces a strong hydrophobicity, similarly to that of Teflon which also is an organic fluorinated compound .

[0042] However, the terminating functional group 10 can alternatively comprise a hydroxy group, a carboxylic acid, a branched and optionally at least partially fluorinated alkyl group . The backbone 9 can alternatively comprise a branched alkyl group . The backbone 9 can also be at least partially aromatic . The anchoring group 8 can also comprise other functional groups such as a thiol group or a phosphonic acid . Apart from thiols , selenols are also known in the state of the art . Many di f ferent combinations of a carrier material , an anchoring group 8 , a backbone 9 and a terminating group 10 can be reali zed . Some prominent examples are discussed in Fig . 4 .

[0043] With reference to the middle part of Fig . 2 , in a next method step, after arranging the SAM 7 , a converter material 11 comprising a phosphor designed to modi fy a wavelength of electromagnetic radiation emitted by the optoelectronic semiconductor chips 4 is arranged on the SAM 7 and on the emission faces 5 of the optoelectronic semiconductor chips 4 . The converter material 11 comprises the phosphor and a matrix material embedding the phosphor . Basically, the entire top side 3 of the carrier 2 is covered by the converter material 11 . The wavelength converter material 8 exemplarily comprises polysiloxane as the matrix material , but alternatively can comprise silicone or epoxide and can e . g . , be arranged by spray coating .

[0044] The converter material 1 and the SAM 7 are chosen with respect to wetting properties of the converter material 11 such that a spontaneous dewetting of the converter material 11 takes place , wherein the converter material 11 dewets from the SAM 7 and only remains at the emission faces of 6 the optoelectronic semiconductor chips 4 , which is shown on the right side of Fig . 2 . In the present example , a converter material 11 comprising polysiloxane and a SAM 7 comprising 1H, 1H, 2H, 2H- perl fuorodecyltrichlorosilane arranged on an oxidi zed silicon wafer have been used . In this case , a good dewetting of the converter material 11 can be observed on the fluorinated top side 3 of the carrier 2 .

[0045] Summari zed, the method enables a selective deposition of the converter material 11 at the emission faces 5 of the optoelectronic semiconductor chips 4 , while the remaining parts of the top side 3 of the carrier 2 remain free from the converter material 11 . Consequently, an optional singulation of the optoelectronic semiconductor chips 4 can be performed by only cutting or sawing the carrier 2 in regions between the optoelectronic semiconductor chips 4 and without cutting or sawing parts of the converter material 11 .

[0046] Fig . 4A schematically shows a SAM 7 comprising a thiol anchoring group 8 . A thiol comprises an SH-anchoring group 8 which can establish a covalent bond to metals such as gold . Precious metals can advantageously be used in order to prepare a SAM 7 at normal conditions in atmosphere . When establishing the chemical bond, the sulphur atom of the thiol group is covalently bound to at least one atom at the metal surface , while hydrogen is released . Exemplarily, the thiol comprises an aliphatic backbone 9 and an arbitrary terminating functional group 10 . Interactions between neighbouring backbones 9 within the SAM 7 stabili ze the SAM 7 advantageously . A structure of the SAM 7 depends on a material which is present at the top side 3 of the carrier 2 . For example , a monocrystalline top side 3 can induce highly ordered SAMs 7 compared to well-ordered SAMs 7 which can be prepared on polycrystalline surfaces and laterally less-ordered on amorphous surfaces , which still comprise a vertical arrangement where the terminating group 10 is present at the interface between SAM 7 and the environment and determining surface properties .

[0047] Fig . 4B schematically shows a SAM comprising a trichlorosilane anchoring group 8 . A trichlorosilane comprises a SiCls-anchoring group 8 which transitions into a Si ( OH)3- anchoring group 8 in an aqueous solution before it establishes a covalent bond to an oxygen atom of a hydroxylated and / or oxidi zed surface , e . g . , an hydroxylated metal or metal oxide surface or oxidi zed silicon, wherein hydrochloric acid is released . In this case , two Si-atoms of neighbouring molecules in the SAM 7 establish a cross link as they are bound by an oxygen atom to one another . Exemplarily, Fig . 4B shows a trichlorosilane with an aliphatic backbone 9 and a fluorinated terminating methyl group .

[0048] Fig . 4C schematically shows a SAM 7 comprising a phosphonic acid anchoring group 8 . A phosphonic acid comprises a H3PO3- anchoring group 8, wherein the phosphorous atom is bound to two hydroxy groups and comprises a double bond to one oxygen atom. This anchoring group 8 is designed to establish a chemical bond to hydroxylated and / or oxidized surfaces such as zinc oxide and titanium dioxide but not limited hereto. In this case, different configurations of the bonding of the anchoring group 8 to the surface can be established. Fig. 4C shows different scenarios, where the anchoring group 8 is bound either by two or three oxygen atoms to an oxygen atom present at the surface. Exemplarily, the phosphonic acid of Fig. 4C comprises an aliphatic backbone 9 and an arbitrary terminating functional group 10.

[0049] Fig. 4D schematically shows a SAM 7 comprising a phosphonic acid anchoring group 8 and different terminating functional groups 10. Fig. 4 D shows four examples, wherein each backbone 9 is aliphatic. In a first example, the terminating functional group 10 is a methyl group. In a second example, the terminating functional group 10 is a hydroxy group. In a third example, the terminating functional group 10 is carboxylic acid. In a fourth example, the terminating functional group 10 is a fully fluorinated methyl group. In the first, the second and the third example, the backbones 9 comprise different lengths, which also can alter surface properties, even if the same terminating functional group 10 is used. In the second and fourth example the backbones 9 are equally long, however, in the fourth example the backbone 9 is partially fluorinated.

[0050] All types of SAMs 7 presented can be prepared by immersion of the top side 3 of carrier 2 into a solution of a monolayerforming agent or by spray coating of the solution on the top side 3 of the carrier 2, both representing an especially quick approach to arrange the SAM 7. Alternatively, gas phase deposition e.g., in a vacuum chamber may be used if a carrier 2 is used which is sensitive towards oxidation. In all cases, heating the carrier 2 during arranging the self-assembled monolayer 7 can improve the quality and order of the SAM 7 signi ficantly .

[0051] The invention has been illustrated and described in detail with the aid of the preferred exemplary embodiments . Nevertheless , the invention is not restricted to the examples disclosed . Rather, other variants may be derived therefrom by a person skilled in the art without departing from the protective scope of the invention .

[0052] REFERENCE SYMBOLS

[0053] 1 optoelectronic component

[0054] 2 carrier 3 top side of the carrier

[0055] 4 optoelectronic semiconductor chip

[0056] 5 emission face of an optoelectronic semiconductor chip

[0057] 6 resist

[0058] 7 sel f-assembled monolayer ( SAM) 8 anchoring group of a SAM

[0059] 9 backbone of a SAM

[0060] 10 terminating group of a SAM

[0061] 11 converter material

Claims

CLAIMS1. A method of producing an optoelectronic component (1) comprising the following method steps:- Providing a carrier (2) comprising a top side (3) ,- arranging a plurality of optoelectronic semiconductor chips(4) at the top side (3) of the carrier (2) , wherein the optoelectronic semiconductor chips (4) comprise emission faces (5) facing away from the top side (3) of the carrier (2) and are designed to emit electromagnetic radiation at their emission faces (5) ,- arranging a self-assembled monolayer (7) on the top side (3) of the carrier (2) in regions surrounding the optoelectronic semiconductor chips (4) laterally, wherein the emission faces (5) of the optoelectronic semiconductor chips (4) remain uncovered by the self-assembled mono- layer ( 7 ) ,- arranging a converter material (11) comprising a phosphor designed to modify a wavelength of electromagnetic radiation emitted by the optoelectronic semiconductor chips (4) on the self-assembled monolayer (7) and on the emission faces (5) of the optoelectronic semiconductor chips (4) , wherein the converter material (11) and the self-assembled monolayer (7) are chosen with respect to wetting properties of the converter material (11) such that a spontaneous dewetting of the converter material (11) takes place, wherein the converter material (11) dewets from the self-assembled monolayer (7) and only remains at the emission faces(5) of the optoelectronic semiconductor chips (4) .

2. The method according to claim 1, wherein arranging the optoelectronic semiconductor chips (4) is performed after arranging the self-assembled monolayer (7) on the top side (3) of the carrier (2) , whereby the self-assembled monolayer (7) is only accessible in regions between the optoelectronic semiconductor chips (4) .

3. The method according to claim 1,wherein arranging the optoelectronic semiconductor chips (4) is performed before arranging the self-assembled monolayer (7) on the top side (3) of the carrier (2) , wherein arranging the self-assembled monolayer (7) on the top side (3) of the carrier (2) in regions surrounding the optoelectronic semiconductor chips (4) laterally, such that the emission faces (5) of the optoelectronic semiconductor chips (4) remain uncovered by the self-assembled monolayer (7) , comprises the following steps:- covering the emission faces (5) of the optoelectronic semiconductor chips (4) with a resist (6) , while areas between the optoelectronic semiconductor chips (4) remain free from the resist ( 6 ) ,- coating areas uncovered by the resist (6) with the self-assembled monolayer (7) ,- removing the resist (6) from the emission faces (5) .

4. The method according to claim 3, wherein covering the emission faces (5) of the optoelectronic semiconductor chips (4) with the resist (6) is performed by arranging the resist (6) over an entire area of the top side (3) of the carrier (2) and structuring the resist (6) such that the resist (6) remains at the emission faces (5) of the optoelectronic semiconductor chips (4) and is removed elsewhere or by arranging a hard mask over the top side (3) of the carrier (2) which only covers the emission faces (5) of the optoelectronic semiconductor chips (4) .

5. The method according to claim 1, wherein arranging the optoelectronic semiconductor chips (4) is performed before arranging the self-assembled monolayer (7) on the top side (3) of the carrier (2) , wherein arranging the self-assembled monolayer (7) on the top side (3) of the carrier (2) in regions surrounding the optoelectronic semiconductor chips (4) laterally, such that the emission faces (5) of the optoelectronic semiconductor chips (4) remain uncovered by the self-assembled monolayer (7) , comprises the following steps:- coating the top side (3) of the carrier (2) and the emission faces (5) with the self-assembled monolayer (7) ,- removing the self-assembled monolayer (7) from the emission faces (5) of the optoelectronic semiconductor chips (4) .

6. The method according to claim 5, wherein removing the self-assembled monolayer (7) from the emission faces (5) of the optoelectronic semiconductor chips (4) is performed with a laser or by plasma etching.

7. The method according to one of the previous claims, wherein arranging the self-assembled monolayer (7) is performed by immersion of the carrier (2) into a solution of a monolayer-forming agent or by spray coating of the solution of the monolayer-forming agent on the top side (3) of the carrier ( 2 ) .

8. The method according to one of the previous claims, wherein arranging the self-assembled monolayer (7) is performed by gas phase deposition.

9. The method according to one of the previous claims, wherein the carrier (2) is heated during arranging the selfassembled monolayer (7) .

10. The method according to one of the previous claims, wherein arranging the converter material (11) is performed by spray coating.

11. The method according to one of the previous claims, wherein the self-assembled monolayer (7) comprises an anchoring group (8) designed to bind to the top side (3) of the carrier ( 2 ) , wherein the anchoring group (8) is a thiol-group, a phos- phonic acid group or a trichlorosilane.

12. The method according to claim 11,wherein the self-assembled monolayer (7) comprises a terminating functional group (10) linked by a backbone (9) to the anchoring group (8) and designed to determine surface properties of the self-assembled monolayer (7) , wherein the terminating functional group (10) comprises a linear or branched alkyl group, a hydroxy group, a carboxylic acid or a linear or branched and at least partially fluorinated alkyl group.

13. The method according to one of the previous claims, wherein the carrier (2) comprises one of the following materials or combinations at its top side: silicon, silicon dioxide, aluminium oxide, sapphire, titanium dioxide, zinc oxide, gold, silver, aluminium, polymer (foil) .

14. The method according to one of the previous claims, wherein the converter material (11) comprises polysiloxane, silicone or epoxide as a matrix material embedding the phosphor .

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