Light-emitting device and light-emitting module comprising same

Abstract

Disclosed is a light-emitting module comprising at least one light-emitting device, the light-emitting device comprising: a first conductive semiconductor layer; a second conductive semiconductor layer; an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; and an electron blocking layer disposed between the active layer and the second conductive semiconductor layer, wherein the electron blocking layer comprises one or more shading areas which are thinner than the adjacent areas.

Description

Light-emitting element and light-emitting module including the same

[0001] The present invention relates to a light-emitting device and a light-emitting module including the same.

[0002] A light-emitting diode (LED) is a type of light-emitting device that emits light when current is applied. Recently, LEDs have been widely used in various fields, such as display devices, vehicle lamps, and general lighting. Furthermore, LEDs boast long lifespans, low power consumption, and fast response times. Taking full advantage of these advantages, they are rapidly replacing existing light sources. For example, a display device utilizing LEDs can be obtained by forming structures of individually grown red (R), green (G), and blue (B) light-emitting diodes (LEDs) on a final substrate.

[0003] Specifically, a light-emitting diode is formed by growing epitaxial layers on a substrate, and includes an N-type semiconductor layer, a P-type semiconductor layer, and an active layer interposed therebetween. An N-electrode pad is formed on the N-type semiconductor layer, and a P-electrode pad is formed on the P-type semiconductor layer, so that the light-emitting diode is driven by being electrically connected to an external power source through the electrode pads. At this time, current can flow from the P-electrode pad through the semiconductor layers to the N-electrode pad, and light generated through recombination of electrons and holes in the active layer can be emitted.

[0004] The purpose of the present invention is to provide a light-emitting device and a light-emitting module including the same, which can improve light-emitting efficiency by reducing strain in a dopant-doped semiconductor layer and improving dopant doping efficiency.

[0005] The purpose of the present invention is to provide a light-emitting device and a light-emitting module including the same that can improve the coupling efficiency of electrons and holes by allowing holes to be uniformly injected into an active layer.

[0006] The purpose of the present invention is to provide a light-emitting device with improved external quantum efficiency (EQE) and a light-emitting module including the same.

[0007] The purpose of the present invention is to provide a light-emitting device having improved reliability and high light extraction efficiency and a light-emitting module including the same.

[0008] The purpose of the present invention is to provide a light-emitting device having high luminous efficiency and capable of improving color clarity, and a light-emitting module including the same.

[0009] According to one embodiment of the present invention, a light-emitting module is disclosed, which includes at least one light-emitting element, wherein the light-emitting element includes a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and an electron-blocking layer disposed between the active layer and the second conductive semiconductor layer, wherein the electron-blocking layer includes one or more shading regions having a thickness thinner than an adjacent region.

[0010] In one embodiment, the difference in lattice constant between the second conductive semiconductor layer and the shading region may be smaller than the difference in lattice constant between the second conductive semiconductor layer and the shading region in other regions.

[0011] In one embodiment, the width of the shading region in the electron-blocking layer may be smaller than the width of an adjacent shading region.

[0012] In one embodiment, the thickness of the shaded region may be less than or equal to 70% of the thickness of the adjacent region.

[0013] In one embodiment, the shading region may be a concavely sunken region on one surface of the electron blocking layer.

[0014] According to one embodiment of the present invention, a light-emitting module is disclosed, which includes at least one light-emitting element, wherein the light-emitting element includes a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and an electron-blocking layer disposed between the active layer and the second conductive semiconductor layer, wherein the electron-blocking layer includes at least one open region extending vertically through the light-emitting module.

[0015] In one embodiment, the width of the open region in the electron blocking layer may be smaller than the width of an adjacent open region.

[0016] In one embodiment, a slope may be formed at the edge of the open area.

[0017] In one embodiment, the second conductive semiconductor layer may include a second-first conductive semiconductor layer disposed on one side of the electron blocking layer, and a second-second conductive semiconductor layer disposed on one side of the second-first conductive semiconductor layer.

[0018] In one embodiment, the concentration of the second conductive dopant of the 2-1 conductive semiconductor layer may be higher than the concentration of the second conductive dopant of the 2-2 conductive semiconductor layer.

[0019] In one embodiment, the first conductive semiconductor layer may include a superlattice layer disposed on one side of the active layer.

[0020] According to one embodiment of the present invention, a light-emitting module is disclosed, which includes at least one light-emitting element, wherein the light-emitting element includes a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, wherein the active layer includes a multi-quantum well structure of alternately disposed barrier layers and well layers, and wherein the well layer includes one or more shading regions having a thickness thinner than an adjacent region.

[0021] In one embodiment, the mobility of holes in the shaded region may be greater than the mobility of holes in other regions other than the shaded region.

[0022] In one embodiment, the width of the shading region in the well layer may be smaller than the width of an adjacent shading region.

[0023] In one embodiment, the thickness of the shaded region may be less than or equal to 70% of the thickness of the adjacent region.

[0024] In one embodiment, the shading region may be a concavely sunken region on one surface of the well layer.

[0025] According to one embodiment of the present invention, a light-emitting module is disclosed, which includes at least one light-emitting element, wherein the light-emitting element includes a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, wherein the active layer includes a multi-quantum well structure of well layers and barrier layers that are alternately disposed, and wherein the well layer includes at least one open region that penetrates upward and downward.

[0026] In one embodiment, the width of the open region in the well layer may be smaller than the width of an adjacent open region.

[0027] In one embodiment, the open area includes an inlet and an outlet positioned opposite the inlet, wherein a cross-sectional width of the inlet may be different from a cross-sectional width of the outlet.

[0028] In one embodiment, the open area includes a side connecting an edge of the inlet and an edge of the outlet, the side being inclined with respect to the horizontal direction of the well layer.

[0029] In one embodiment, the spacing between one open area and an adjacent open area in the well layer may be different from the width of the one open area and the adjacent open area.

[0030] The present invention can provide a light-emitting device and a light-emitting module including the same, which can improve light-emitting efficiency by reducing strain in a dopant-doped semiconductor layer and improving dopant doping efficiency.

[0031] The present invention can provide a light-emitting device and a light-emitting module including the same that can improve the coupling efficiency of electrons and holes by allowing holes to be uniformly injected into an active layer.

[0032] The present invention can provide a light-emitting device with improved external quantum efficiency (EQE) and a light-emitting module including the same.

[0033] The present invention can provide a light-emitting device with improved reliability and high light extraction efficiency and a light-emitting module including the same.

[0034] The present invention can provide a light-emitting device having high luminous efficiency and capable of improving color clarity, and a light-emitting module including the same.

[0035] Fig. 1 is a cross-sectional view showing a semiconductor layer of a light-emitting device of the present invention.

[0036] Figure 2 is an enlarged view showing A of Figure 1.

[0037] Fig. 3 is an enlarged view showing a portion of the configuration of a light-emitting device according to one embodiment.

[0038] FIG. 4a is an enlarged view showing a portion of a configuration of a light-emitting element according to another embodiment.

[0039] Figure 4b is a modified example of Figure 4a.

[0040] Fig. 5 is a plan view showing a light-emitting device according to one embodiment of the present invention.

[0041] Figure 6 is a cross-sectional view taken along the line A-A' of Figure 5.

[0042] Fig. 7 is a cross-sectional view showing a light-emitting device according to another embodiment of the present invention.

[0043] Fig. 8 is a modified example of Fig. 7.

[0044] FIG. 9a is a cross-sectional view showing a light-emitting module according to the first embodiment of the present invention.

[0045] Figure 9b is a modified example of Figure 9a.

[0046] Fig. 10 is a plan view showing a light-emitting module according to a second embodiment of the present invention.

[0047] Fig. 11 is a side view showing a light-emitting module according to a third embodiment of the present invention.

[0048] Fig. 12 is a plan view showing a light-emitting module according to a fourth embodiment of the present invention.

[0049] Fig. 13 is an exploded perspective view showing a light-emitting module according to a fifth embodiment of the present invention.

[0050] Fig. 14 is a cross-sectional view showing a part of a light-emitting module according to the sixth embodiment of the present invention.

[0051] Fig. 15 is a side view showing a part of a light-emitting module according to the seventh embodiment of the present invention.

[0052] Fig. 16 is a plan view showing a light-emitting module according to the seventh embodiment of the present invention.

[0053] In the following description, for purposes of explanation, numerous specific details are set forth to provide a thorough understanding of various embodiments or implementations of the present disclosure. As used herein, the terms "embodiment" and "implementation" are interchangeable to refer to non-limiting examples of devices or methods that utilize one or more of the inventive concepts disclosed herein. However, it will be apparent that various embodiments may be practiced without utilizing these specific details or using one or more equivalent arrangements. In other instances, well-known structures and devices are shown in block diagram form to avoid unnecessarily obscuring the various embodiments. Furthermore, while the various embodiments may vary from one another, they are not necessarily exclusive. For example, specific features, configurations, and characteristics of an embodiment may be utilized or implemented in other embodiments without departing from the scope of the inventive concepts.

[0054] Unless otherwise specified, the illustrated embodiments should be understood to provide exemplary features of varying details of some ways in which the concepts of the present invention may be practically implemented. Therefore, unless otherwise specified, the features, components, modules, layers, membranes, panels, regions, and / or aspects (hereinafter, individually or collectively referred to as "elements") of the various embodiments may be differently combined, separated, interchanged, and / or rearranged without departing from the scope of the concepts of the present invention.

[0055] The use of cross-hatching and / or shading in the accompanying drawings is generally provided to clarify boundaries between adjacent elements. As such, the presence or absence of cross-hatching or shading, unless expressly stated, does not imply or indicate any preference or requirement for any particular material, material properties, dimensions, proportions, commonality between the illustrated elements, and / or any other features, properties, or characteristics of the elements. Furthermore, in the accompanying drawings, the dimensions and relative sizes of elements may be exaggerated for clarity and / or illustrative purposes. When embodiments are implemented differently, certain process sequences may be performed differently from the described sequence. For example, two consecutively described processes may be performed substantially simultaneously or in a reverse order from the described sequence. Furthermore, like reference numerals designate like elements.

[0056] When an element, such as a layer, is referred to as being "on," "connected to," or "joined to" another element or layer, the element may be directly on, connected to, or joined to the other element or layer, or there may be intervening elements or layers present. However, when an element or layer is referred to as being "directly on," "directly connected to," or "directly joined to" another element or layer, there are no intervening elements or layers present. For this purpose, the term "connected" may refer to physical, electrical, and / or fluidic connections, with or without intervening elements. Furthermore, the DR1-axis, DR2-axis, and DR3-axis are not limited to the three axes of a Cartesian coordinate system, such as the x, y, and z-axes, and may be interpreted in a broader sense. For example, the DR1-axis, DR2-axis, and DR3-axis may be perpendicular to one another, or may represent different directions that are not perpendicular to one another. For purposes of this disclosure, “at least one of X, Y, and Z” and “at least one selected from the group consisting of X, Y, and Z” may be interpreted as only X, only Y, only Z, or any combination of two or more of X, Y, and Z, such as, for example, XYZ, XYY, YZ, and ZZ. The term “and / or” as used herein includes any and all combinations of one or more of the associated listed items.

[0057] Although the terms "first," "second," and the like may be used herein to describe various types of elements, these elements should not be limited by these terms. These terms are used to distinguish one element from another. Therefore, the first element discussed below may be referred to as the second element without departing from the teachings of the present disclosure.

[0058] Spatially relative terms such as "beneath," "beneath," "directly beneath," "lower," "above," "upper," "above," "higher than," "side" (as in, for example, a "side wall"), and the like may be used for descriptive purposes and thereby to describe the relationship of one element to other element(s) as depicted in the drawings. Spatially relative terms are intended to encompass different orientations of the device in use, operation, and / or manufacture in addition to the orientations depicted in the drawings. For example, if the device in the drawings were turned over, an element described as "beneath" or "beneath" another element or feature would then be oriented "above" the other element or feature. Therefore, the exemplary term "beneath" can encompass both orientations above and below. Furthermore, the device can be oriented differently (e.g., rotated 90° or oriented in other orientations), and thus the spatially relative descriptors used herein can also be interpreted accordingly.

[0059] The terminology used herein is for the purpose of describing particular embodiments and is not limiting. The singular forms "a," "an," and "the" as used herein also include the plural forms unless the context clearly dictates otherwise. Furthermore, the terms "comprises," "comprising," "includes," and / or "comprising" as used herein specify the presence of stated features, integers, steps, operations, elements, components, and / or groups thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof. Furthermore, the terms "substantially," "about," and other similar terms as used herein are used as terms of approximation rather than degrees, and as such, are used to describe inherent deviations from measured, calculated, and / or provided values ​​that would be recognized by one of ordinary skill in the art.

[0060] Various embodiments are described below with reference to cross-sectional and / or exploded illustrations, which are schematic illustrations of idealized embodiments and / or intermediate structures. As such, variations from the shapes of the illustrated drawings may be expected, for example, as a result of manufacturing techniques and / or tolerances. Therefore, the embodiments disclosed herein should not necessarily be construed as limited to the shapes of specific illustrated regions, but should be construed to include, for example, deviations in shape resulting from manufacturing. In this way, the regions depicted in the drawings may be schematic in nature, and the shapes of these regions may not reflect the actual shapes of regions of the device, and as such, are not necessarily intended to have a limiting meaning.

[0061] As is conventional in the art, some embodiments may be illustrated and described in the accompanying drawings in terms of functional blocks, units, and / or modules. Those skilled in the art will appreciate that these blocks, units, and / or modules are physically implemented by electronic (or optical) circuits such as logic circuits, discrete components, microprocessors, wiring circuits, memory elements, and wiring connections formed using semiconductor-based or other manufacturing techniques. When the blocks, units, and / or modules are implemented by microprocessors or other similar hardware, they may be programmed and controlled using software (e.g., microcode) to perform the various functions discussed herein, and optionally, may be driven by firmware and / or software. Furthermore, each block, unit, and / or module may be implemented by dedicated hardware, or by a combination of dedicated hardware for performing some functions and processors (e.g., one or more programmed processors and associated circuitry) for performing other functions. Additionally, the blocks, units, and / or modules of some embodiments may be physically separated into two or more interacting and individual blocks, units, and / or modules without departing from the scope of the present invention. Additionally, the blocks, units, and / or modules of some embodiments may be physically combined into more complex blocks, units, and / or modules without departing from the scope of the present invention.

[0062] Unless otherwise defined, all terms (including technical or scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure pertains. Terms defined in commonly used dictionaries, such as terms defined in commonly used dictionaries, should be interpreted to have a meaning consistent with their meaning in the context of the relevant technology, and should not be interpreted in an idealistic or overly formal sense unless explicitly defined herein.

[0063] Hereinafter, the light-emitting device of the present invention and the light-emitting module including the same will be described in detail through drawings.

[0064] Referring to FIG. 1, the light-emitting device (100) may include a semiconductor layer (EP) for generating and emitting light. Specifically, the semiconductor layer (EP) of the light-emitting device (100) may include a first conductive semiconductor layer (110), a second conductive semiconductor layer (120), and an active layer (130) disposed between the first conductive semiconductor layer (110) and the second conductive semiconductor layer (120).

[0065] The first conductive semiconductor layer (110) may include a phosphide or nitride semiconductor such as (Al, Ga, In)P or (Al, Ga, In)N, and may be arranged on a growth substrate using a method such as MOCVD, MBE, HVPE, etc. For example, the first conductive semiconductor layer (110) may be a nitride semiconductor layer doped with a first conductive dopant, for example, In doped with Si as a first conductive dopant. x Al y Ga (1-x) It can be formed with N (0≤x≤0, 0≤y≤1, 0≤x+y<1) layers.

[0066] In addition, the first conductive semiconductor layer (110) may be doped as n-type by including one or more impurities such as Si, C, Ge, Sn, Te, Pb, etc. However, the present invention is not limited thereto, and the first conductive semiconductor layer (110) may be doped as an opposite conductive type by including a p-type dopant. The doping concentration of the first conductive dopant is 5X10 17 atoms / cm 3 5X10 19 atoms / cm 3 It could be.

[0067] The first conductive semiconductor layer (110) may be composed of a single layer or may include a plurality of layers. The first conductive semiconductor layer (110) may further include a core layer and a buffer layer. In addition, the first conductive semiconductor layer (110) may further include a superlattice layer. The superlattice layer may be formed on the upper portion of the first conductive semiconductor layer (110).

[0068] The second conductive semiconductor layer (120) may include a phosphide-based or nitride-based semiconductor such as (Al, Ga, In)P or (Al, Ga, In)N, and may be grown using a technique such as MOCVD, MBE, or HVPE. The second conductive semiconductor layer (120) may be doped with a second conductive dopant having a conductivity type opposite to that of the first conductive semiconductor layer (110). For example, the second conductive semiconductor layer (120) may be doped to be p-type by including an impurity such as Mg. The second conductive semiconductor layer (120) may include, for example, In x Al y Ga 1-x-y It can be formed as N (0≤x≤1, 0≤y≤1, 0≤x+y<1).

[0069] The above second conductive semiconductor layer (120) is p-In x Al y Ga 1-x-yIt may be composed of a single layer having a composition such as N (0≤x≤1, 0≤y≤1, 0≤x+y<1) or may include a plurality of layers. For example, the second conductive semiconductor layer (120) may include a 2-1 conductive semiconductor layer (122) and a 2-2 conductive semiconductor layer (124) disposed on one side of the 2-1 conductive semiconductor layer (122). The second conductive semiconductor layer (120) may further include a 2-3 conductive semiconductor layer (126) on the 2-2 conductive semiconductor layer (124). The second conductive semiconductor layer (120) may further include a layer containing Al therein. In addition, the second conductive semiconductor layer (120) may further include a superlattice layer. In addition, the second conductive semiconductor layer (120) may further include a 2-2 conductive contact layer.

[0070] The above active layer (130) may be a light-emitting layer disposed between the first conductive semiconductor layer (110) and the second conductive semiconductor layer (120). The above active layer (130) may be disposed on one surface of the first conductive semiconductor layer (110).

[0071] The above active layer (130) may include a phosphide or nitride semiconductor such as (Al, Ga, In)P or (Al, Ga, In)N, and may be grown on one surface of the first conductive semiconductor layer (110) using a technique such as MOCVD, MBE, or HVPE.

[0072] The active layer (130) may include a quantum well structure (QW) including at least two barrier layers (132) and at least one well layer (134). Alternatively, the active layer (130) may include a multi-quantum well structure (MQW) of alternately arranged barrier layers (132) and well layers (134). The multi-quantum well structure (MQW) may include a plurality of alternately arranged barrier layers (132) and well layers (134). Adjacent barrier layers (132) and well layers (134) may form a pair. The active layer (130) may include a plurality of pairs.

[0073] The above well layer (134) and barrier layer (132) are, for example, In x Al y Ga (1-x-y) It can be formed of a semiconductor material having a composition formula of N (0≤x≤1, 0≤y≤1, 0≤x+y<1). For example, it can include at least one of InGaN / GaN, GaN / AlGaN, AlGaN / AlGaN, InGaN / AlGaN, or InGaN / InGaN.

[0074] The wavelength of light emitted from the above active layer (130) can be controlled by controlling the composition ratio of the materials constituting the well layer (134). The composition and thickness of the well layer (134) can determine the wavelength of the light generated. In particular, by controlling the composition of the well layer (134), an active layer (130) that generates ultraviolet light, blue light, red light, or green light can be provided.

[0075] As a modified example, the active layer (130) may include a sub-active layer and a main active layer. The sub-active layer may be disposed on the first conductive semiconductor layer (110). The sub-active layer may include a first sub-active layer and a second sub-active layer on the first sub-active layer. The main active layer may include a barrier layer (132) and a well layer (134) that are alternately stacked.

[0076] The first conductive semiconductor layer (110), the active layer (130), and the second conductive semiconductor layer (120) may be a semiconductor laminate and a light-emitting structure that emits light having a preset peak wavelength. That is, the semiconductor laminate may emit light of a color such as blue, green, or red.

[0077] Specifically, the semiconductor layer emitting blue light has a dominant wavelength within the blue wavelength range, and specifically, may have a dominant wavelength between 440 nm and 480 nm.

[0078] A semiconductor laminate emitting green light has a dominant wavelength within the green wavelength range, and specifically, may have a dominant wavelength between 480 nm and 580 nm. The peak wavelength of the light-emitting element (100) emitting green light may be a wavelength shorter than the dominant wavelength.

[0079] A semiconductor laminate emitting red light has a dominant wavelength within the red wavelength range, and specifically, may have a dominant wavelength between 600 nm and 650 nm. The peak wavelength of the light-emitting element (100) emitting red light may be a wavelength longer than the dominant wavelength.

[0080] Referring again to FIG. 2, when the first conductive semiconductor layer (110) includes a superlattice layer, the active layer (130) may be disposed between the superlattice layer and the second conductive semiconductor layer (120).

[0081] The band gap energy level of the first conductive semiconductor layer (110) may be closer to the band gap energy level of the barrier layer (132) than to the band gap energy level of the well layer (134). The band gap energy level of the second conductive semiconductor layer (120) may be closer to the band gap energy level of the barrier layer (132) than to the band gap energy level of the well layer (134). Therefore, the strain of the energy band of the barrier layer (132) disposed between the first conductive semiconductor layer (110) and the second conductive semiconductor layer (120) may be reduced, thereby increasing the efficiency with which electrons and holes are trapped in the well layer.

[0082] The difference between the band gap energy of the first conductive semiconductor layer (110) and the band gap energy of the well layer (134) may be at least twice the difference between the band gap energy of the first conductive semiconductor layer (110) and the band gap energy of the barrier layer (132). The difference between the band gap energy of the second conductive semiconductor layer (120) and the band gap energy of the well layer (134) may be at least twice the difference between the band gap energy of the second conductive semiconductor layer (120) and the band gap energy of the barrier layer (132). Due to the large band gap energy difference, the probability of electrons and holes escaping may be reduced.

[0083] When dividing the upper region and the lower region based on the midpoint of the band gap energy difference between the well layer (134) and the barrier layer (132), the band gap energy level of at least one of the first conductive semiconductor layer (110) and the second conductive semiconductor layer (120) may be within the range of the upper region.

[0084] Meanwhile, the light-emitting element (100) may further include an electron blocking layer (140) between the active layer (130) and the second conductive semiconductor layer (120).

[0085] The electron blocking layer (140) may be a layer having a relatively large band gap. The electron blocking layer (140) is located on one side of the active layer (130) and may prevent electrons from overflowing from the active layer (130) to the second conductive semiconductor layer (120). The electron blocking layer (140) may be, for example, In. x Al y Ga 1-x-y It can be formed with N (0≤x≤1, 0≤y≤1, 0≤x+y<1) materials.

[0086] The electron blocking layer (140) may be disposed on the uppermost last barrier layer (132) of the active layer (130). The average band gap energy of the electron blocking layer (140) may be greater than the average band gap energy of the uppermost last barrier layer (132). The electrons of the active layer (130) may be blocked from moving toward the second conductive semiconductor layer (120) by the energy barrier of the electron blocking layer (140).

[0087] The above electron blocking layer (140) may be a layer containing an Al composition. For example, the electron blocking layer (140) may be a layer containing AlGaN.

[0088] A second-first conductive semiconductor layer (122) may be disposed on the upper portion of the electron-blocking layer (140). That is, the second-first conductive semiconductor layer (122) may be a layer disposed on one side of the electron-blocking layer (140), and the second-second conductive semiconductor layer (124) may be a layer disposed on one side of the second-first conductive semiconductor layer (122).

[0089] The above-mentioned 2-1 conductive semiconductor layer (122) may be a layer doped with a high concentration of a second conductive dopant. The concentration of the second conductive dopant of the above-mentioned 2-1 conductive semiconductor layer (122) may be higher than the concentration of the second conductive dopant of the above-mentioned 2-2 conductive semiconductor layer (124).

[0090] The band gap energy difference between the first conductive semiconductor layer (110) and the barrier layer (132) may be smaller than the band gap energy difference between the first conductive semiconductor layer (110) and the electron blocking layer (140). In addition, the band gap energy difference between the second conductive semiconductor layer (120) and the barrier layer (132) may be smaller than the band gap energy difference between the second conductive semiconductor layer (120) and the electron blocking layer (140).

[0091] As a first embodiment, in the light-emitting device (100) of the present invention, the electron-blocking layer (140) may include a shading region (SR). Referring to FIG. 3, the shading region (SR) may be a portion of the electron-blocking layer (140) and may be a region thinner than an adjacent region.

[0092] For example, in the electron blocking layer (140), the thickness (t1) of the shading region (SR) may be 70% or less of the thickness (t2) of the adjacent region. Here, the thickness (t1) of the shading region (SR) may mean the minimum thickness within the shading region (SR).

[0093] The difference in lattice constant between the second conductive semiconductor layer (120) in the shading region (SR) may be smaller than the difference in lattice constant between the second conductive semiconductor layer (120) in other regions excluding the shading region (SR).

[0094] The lattice constant of the electron blocking layer (140) may be significantly different from the lattice constant of the second conductive semiconductor layer (120). Accordingly, a large strain may be induced in the second conductive semiconductor layer (120). If a large strain is induced in the second conductive semiconductor layer (120), the doping efficiency of the second conductive dopant in the second conductive semiconductor layer (120) may be reduced. If the doping efficiency of the second conductive semiconductor layer (120) is reduced, the hole generation efficiency may be reduced, and thus the light generation efficiency in the active layer (130) may also be reduced.

[0095] However, since the shading region (SR) of the electron blocking layer (140) has a relatively thin thickness (t1) compared to other regions, the lattice constant gap with the second conductive semiconductor layer (120) in the shading region (SR) can be alleviated. Accordingly, the strain of the second conductive semiconductor layer (120) can be alleviated, the doping efficiency of the second conductive semiconductor layer (120) can be improved, and the light generation efficiency can also be increased.

[0096] The above shading regions (SR) may be provided in various numbers and may be arranged at various locations within the electron blocking layer (140).

[0097] The width (W1) of the above shading region (SR) may be the same as or different from the width (W1) of the adjacent shading region (SR). For example, in the electron blocking layer (140), the width (W1) of the shading region (SR) may be smaller than the width (W1) of the adjacent shading region (SR). Here, the width (W1) of the shading region (SR) may refer to the width of the shading region (SR) when viewed in cross section.

[0098] In the electron blocking layer (140), the gap (W2) between one shading region (SR) and an adjacent shading region (SR) may be different from the width (W1) of the shading region (OP). Here, the gap (W2) between one shading region (SR) and an adjacent shading region (SR) may mean a linear gap between two neighboring shading regions (SR). The gap (W2) between one shading region (SR) and an adjacent shading region (SR) may be different from the width (W1) of the shading region (SR). For example, the gap (W2) between one shading region (SR) and an adjacent shading region (SR) may be greater than the width (W1) of the shading region (SR).

[0099] When the above shading areas (SR) are provided in multiple numbers, the shading areas (SR) may be uniformly distributed or concentrated in a specific area.

[0100] The above shading region (SR) may be a concavely sunken region on one surface of the electron blocking layer (140). The above sunken region may be formed on the upper surface of the electron blocking layer (140), on the lower surface, or on both the upper and lower surfaces.

[0101] As a second embodiment, in the light-emitting device (100) of the present invention, the electron-blocking layer (140) may include an open area (OP). Referring to FIG. 4A, the open area (OP) may be a portion of the electron-blocking layer (140), and may be an area where the electron-blocking layer (140) penetrates from top to bottom.

[0102] Since the open area (OP) is a penetration area, the uppermost last barrier layer (132) of the active layer (130) can be in contact with the second conductive semiconductor layer (120). Therefore, the difference in lattice constant between the barrier layer (132) and the second conductive semiconductor layer (120) in the open area (OP) may be smaller than the difference in lattice constant between the barrier layer (132) and the second conductive semiconductor layer (120) in other areas excluding the open area (OP).

[0103] The lattice constant of the electron blocking layer (140) may be significantly different from the lattice constant of the second conductive semiconductor layer (120). Accordingly, a large strain may be induced in the second conductive semiconductor layer (120). If a large strain is induced in the second conductive semiconductor layer (120), the doping efficiency of the second conductive dopant in the second conductive semiconductor layer (120) may be reduced. If the doping efficiency of the second conductive semiconductor layer (120) is reduced, the hole generation efficiency may be reduced, and thus the light generation efficiency in the active layer (130) may also be reduced.

[0104] However, since the open region (OP) of the electron blocking layer (140) is a penetration region, the lattice constant gap with the second conductive semiconductor layer (120) in the open region (OP) can be alleviated. Accordingly, the strain of the second conductive semiconductor layer (120) can be alleviated, the doping efficiency of the second conductive semiconductor layer (120) can be improved, and the light generation efficiency can also be increased. In addition, the hole injection speed can be increased by allowing holes to be sucked into the open region (OP).

[0105] The above open areas (OP) can be provided in various numbers and can be placed in various locations within the electron blocking layer (140).

[0106] The width (W3) of the open area (OP) may be the same as or different from the width (W3) of the adjacent open area (OP). For example, in the electron blocking layer (140), the width (W3) of the open area (OP) may be smaller than the width (W3) of the adjacent open area (OP). Here, the width (W3) of the open area (OP) may refer to the width of the open area (OP) when viewed in cross-section.

[0107] In the electron blocking layer (140), the gap (W4) between one open area (OP) and an adjacent open area (OP) may be different from the width (W3) of the open area (OP). Here, the gap (W4) between one open area (OP) and an adjacent open area (OP) may mean a linear gap between two neighboring open areas (OP). The gap (W4) between one open area (OP) and an adjacent open area (OP) may be different from the width (W3) of the open area (OP). For example, the gap (W4) between one open area (OP) and an adjacent open area (OP) may be greater than the width (W3) of the open area (OP).

[0108] When the above open areas (OP) are provided in multiple numbers, the open areas (OP) may be uniformly distributed or concentrated in a specific area.

[0109] The above open area (OP) may have various shapes when viewed in a plan view. For example, the above open area (OP) is not limited to a specific shape such as a circle, an oval, or a square.

[0110] The open area (OP) may include an inlet and an outlet positioned opposite the inlet. The inlet may be an entrance through which holes enter the open area (OP), and the outlet may be an exit through which holes passing through the open area (OP) exit the open area (OP). The inlet may be positioned at one end of the open area (OP), and the outlet may be positioned at the other end of the open area (OP). The width of the inlet may be the diameter of an edge of the inlet. The width of the outlet may be the diameter of an edge of the outlet.

[0111] The open area may include a side surface connecting the edge of the inlet and the edge of the outlet. The side surface may be an inner surface (IS) defining the open area (OP). The side surface may be perpendicular to the horizontal direction of the electron blocking layer (140) or inclined.

[0112] FIG. 4a illustrates an example in which the inner surface (IS) defining the open area (OP) is a vertical surface, but the present invention is not limited thereto. In this case, the width of the inlet and the width of the outlet may be the same. The side connecting the edge of the inlet and the edge of the outlet forms the inner surface (IS), and the inner surface (IS) may be a vertical surface.

[0113] As another example, referring to FIG. 4b, an inclined surface (SL) may be formed on an edge defining the open area (OP). The inclination of the inclined surface (SL) may be constant or may vary depending on the position. The width at the bottom and the width at the top of the open area (OP) may be different due to the inclined surface (SL). That is, the width of the inlet and the width of the outlet may be different from each other. For example, the width at the bottom (or outlet) of the open area (OP) may be larger than the width at the top (or inlet). Conversely, the width at the bottom (or outlet) of the open area (OP) may be smaller than the width at the top (or inlet). Therefore, by making the widths of the inlet and the outlet of the open area (OP) through which holes pass different, the speed of the holes may be controlled.

[0114] The electron blocking layer (140) may include at least one of the shading region (SR) and the open region (OP). That is, the electron blocking layer (140) may include both the shading region (SR) and the open region (OP).

[0115] As a third embodiment, in the light-emitting device (100) of the present invention, the well layer (134) may include a shading region (SR). When the light-emitting device (100) includes a plurality of well layers (134), at least one of the plurality of well layers (134) may include the shading region (SR). Referring to FIG. 3, the shading region (SR) may be a portion of the well layer (134) and may be a region that is thinner than an adjacent region.

[0116] For example, the thickness (t1) of the shading region (SR) in the well layer (134) may be 70% or less of the thickness (t2) of the adjacent region. Here, the thickness (t1) of the shading region (SR) may mean the minimum thickness within the shading region (SR).

[0117] The above well layer (134) has a lower band gap energy than the barrier layer (132), and has a structure in which a different type of semiconductor layer with a smaller band gap is placed between the barrier layer (132), which is a semiconductor layer with a large band gap energy. The well layer (134) and the barrier layer (132) are heterojunction structures, and the strain due to the difference in lattice constant between the well layer (134) and the barrier layer (132) and the transition energy due to the quantum confinement effect may vary depending on the thickness of the well layer (134).

[0118] Since the shading region (SR) of the well layer (134) has a relatively thin thickness (t1) compared to other regions, the lattice constant with respect to the barrier layer (132) in the shading region (SR) may be smaller than the difference in lattice constant with respect to the barrier layer (132) in other regions except for the shading region (SR). In addition, the probability that holes are trapped in the well layer (134) in the shading region (SR) of the well layer (134) is reduced, so that holes can move more smoothly to the adjacent barrier layer (134), and holes can be quickly and evenly diffused to all the well layers (134) in the active layer (130). Accordingly, electrons and holes can be evenly combined throughout the entire active layer (130), enabling even light generation and emission.

[0119] The above shading areas (SR) may be provided in various numbers and may be arranged at various locations within the well layer (134).

[0120] The width (W1) of the above shading region (SR) may be the same as or different from the width (W1) of the adjacent shading region (SR). For example, in the well layer (134), the width (W1) of the shading region (SR) may be smaller than the width (W1) of the adjacent shading region (SR). Here, the width (W1) of the shading region (SR) may refer to the width of the shading region (SR) when viewed in cross section.

[0121] In the above well layer (134), the gap (W2) between one shading region (SR) and an adjacent shading region (SR) may be different from the width (W1) of the shading region (OP). Here, the gap (W2) between one shading region (SR) and an adjacent shading region (SR) may mean a linear gap between two neighboring shading regions (SR). The gap (W2) between one shading region (SR) and an adjacent shading region (SR) may be different from the width (W1) of the shading region (SR). For example, the gap (W2) between one shading region (SR) and an adjacent shading region (SR) may be greater than the width (W1) of the shading region (SR).

[0122] When the above well layer (134) has a plurality of shading areas (SR), the shading areas (SR) may be uniformly distributed or concentrated in a specific area.

[0123] The above shading region (SR) may be a concave sunken region on one surface of the well layer (134). The above sunken region may be formed on the upper surface of the well layer (134), on the lower surface, or on both the upper and lower surfaces.

[0124] As a fourth embodiment, in the light-emitting device (100) of the present invention, the well layer (134) may include an open area (OP). When the light-emitting device (100) includes a plurality of well layers (134), at least one of the plurality of well layers (134) may include the open area (OP). Referring to FIG. 4A, the open area (OP) may be a portion of the well layer (134), and may be an area through which the well layer (134) extends vertically.

[0125] The above well layer (134) is a layer having a lower band gap energy than the barrier layer (132), and has a structure in which a different type of semiconductor layer having a smaller band gap is placed between the barrier layer (132), which is a semiconductor layer having a large band gap energy. The well layer (134) and the barrier layer (132) are a heterojunction structure, and the strain due to the difference in lattice constant between the well layer (134) and the barrier layer (132) due to the open region (OP) of the well layer (134) and the transition energy due to the quantum confinement effect can be different.

[0126] Since the open region (SR) of the well layer (134) is a penetration region, the adjacent barrier layer (132) on one side of the well layer (134) can be in contact with the adjacent barrier layer (132) on the other side. Therefore, the difference in lattice constant between the barrier layer (132) in the open region (OP) and the well layer (132) may be smaller than the difference in lattice constant between the barrier layer (132) in other regions except for the open region (OP). In addition, the probability that holes are trapped in the well layer (134) in the open region (OP) of the well layer (134) is reduced, so that holes can move more smoothly to the adjacent barrier layer (134), and holes can be quickly and evenly diffused to all the well layers (134) in the active layer (130). Accordingly, electrons and holes can be uniformly combined throughout the active layer (130), enabling uniform light generation and emission. In addition, light can be emitted from the side of the open region (OP), so that the side light extraction efficiency can be increased.

[0127] The above open areas (OP) can be provided in various numbers and can be placed at various locations within the well layer (134).

[0128] The width (W3) of the open area (OP) may be the same as or different from the width (W3) of the adjacent open area (OP). For example, in the well layer (134), the width (W3) of the open area (OP) may be smaller than the width (W3) of the adjacent open area (OP). Here, the width (W3) of the open area (OP) may refer to the width of the open area (OP) when viewed in cross section.

[0129] In the above well layer (134), the gap (W4) between one open area (OP) and an adjacent open area (OP) may be different from the width (W3) of the open area (OP). Here, the gap (W4) between one open area (OP) and an adjacent open area (OP) may mean a straight-line gap between two neighboring open areas (OP). The gap (W4) between one open area (OP) and an adjacent open area (OP) may be different from the width (W3) of the open area (OP). For example, the gap (W4) between one open area (OP) and an adjacent open area (OP) may be greater than the width (W3) of the open area (OP).

[0130] When the above well layer (134) has multiple open areas (OP), the open areas (OP) may be uniformly distributed or concentrated in a specific area.

[0131] The above open area (OP) may have various shapes when viewed in a plan view. For example, the above open area (OP) is not limited to a specific shape such as a circle, an oval, or a square.

[0132] The open area (OP) may include an inlet and an outlet positioned opposite the inlet. The inlet may be an entrance through which holes enter the open area (OP), and the outlet may be an exit through which holes passing through the open area (OP) exit the open area (OP). The inlet may be positioned at one end of the open area (OP), and the outlet may be positioned at the other end of the open area (OP). The width of the inlet may be the diameter of an edge of the inlet. The width of the outlet may be the diameter of an edge of the outlet.

[0133] The open area may include a side surface connecting the edge of the inlet and the edge of the outlet. The side surface may be an inner surface (IS) defining the open area (OP). The side surface may be perpendicular to or inclined with respect to the horizontal direction of the well layer (134).

[0134] FIG. 4a illustrates an example in which the inner surface (IS) defining the open area (OP) is a vertical surface, but the present invention is not limited thereto. In this case, the width of the inlet and the width of the outlet may be the same. The side connecting the edge of the inlet and the edge of the outlet forms the inner surface (IS), and the inner surface (IS) may be a vertical surface.

[0135] As another example, referring to FIG. 4b, an inclined surface (SL) may be formed on an edge defining the open area (OP). The inclination of the inclined surface (SL) may be constant or may vary depending on the position. The width at the bottom and the width at the top of the open area (OP) may be different due to the inclined surface (SL). That is, the width of the inlet and the width of the outlet may be different from each other. For example, the width at the bottom (or outlet) of the open area (OP) may be greater than the width at the top (or inlet). Conversely, the width at the bottom (or outlet) of the open area (OP) may be less than the width at the top (or inlet).

[0136] When a plurality of well layers (134) each include an open area (OP), each open area (OP) may be arranged at a position that overlaps with each other in the thickness direction. Alternatively, each open area (OP) may be arranged at a position that does not overlap with each other in the thickness direction.

[0137] The well layer (134) may include at least one of the shading region (SR) and the open region (OP). That is, the well layer (134) may include both the shading region (SR) and the open region (OP).

[0138] Additionally, one of the well layers (134) may include a shading region (SR) and the other may include an open region (OP). Alternatively, one well layer (134) may include both a shading region (SR) and an open region (OP).

[0139] When the electron blocking layer (140) includes at least one of the shading region (SR) and the open region (OP), the well layer (134) may also include at least one of the shading region (SR) and the open region (OP). Alternatively, when the electron blocking layer (140) includes at least one of the shading region (SR) and the open region (OP), the well layer (134) may not include the shading region (SR) and the open region (OP). Alternatively, when the well layer (134) includes at least one of the shading region (SR) and the open region (OP), the electron blocking layer (140) may also include at least one of the shading region (SR) and the open region (OP). Alternatively, when the well layer (134) includes at least one of the shading region (SR) and the open region (OP), the electron blocking layer (140) may not include the shading region (SR) and the open region (OP).

[0140] Next, FIG. 5 is a light-emitting device (100) according to one embodiment of the present invention, wherein the light-emitting device (100) may include the semiconductor layer described above. The light-emitting device (100) may include a mesa (M) positioned on a portion of the first conductive semiconductor layer (110) so as to expose the upper surface of the first conductive semiconductor layer (110), an ohmic layer (150) disposed on one surface of the second conductive semiconductor layer, and an insulating layer (160) covering at least a portion of the mesa (M). FIG. 6 is a cross-sectional view taken along the line AA' of FIG. 5.

[0141] The first conductive semiconductor layer (110) may be disposed on a substrate (101). The substrate (101) may be a growth substrate capable of semiconductor layer growth. The substrate (101) is not limited to a specific substrate as long as semiconductor layer growth is possible, and may be, for example, a sapphire substrate, a gallium nitride substrate, a SiC substrate, a spinel substrate, etc. The substrate (101) may be a patterned substrate in which one surface on which the first conductive semiconductor layer (110) is grown is patterned. In this case, unevenness or protrusions (P) may be formed on one surface of the substrate (101). When the substrate (101) is a patterned sapphire substrate, the patterned pattern region may include two materials having different refractive indices.

[0142] The substrate (101) may have a rectangular or square shape on a plane, but is not necessarily limited thereto. The size of the substrate (101) is not particularly limited and may be designed in various sizes. The substrate (101) may be omitted.

[0143] Referring to FIGS. 5 and 6, the mesa (M) may be a structure formed by etching a semiconductor layer so that the upper surface of the first conductive semiconductor layer (110) is exposed. Accordingly, the second conductive semiconductor layer (120) and the active layer (130) may have a smaller area than the first conductive semiconductor layer (110). The mesa (M) may include a portion of the first conductive semiconductor layer (110).

[0144] The upper surface of the first conductive semiconductor layer (110) may be exposed around the mesa (M). The first conductive semiconductor layer (110) may be exposed in a ring shape around the mesa (M), but the present invention is not limited thereto. A portion of the side surface of the first conductive semiconductor layer (110) may be continuously connected to the side surface of the mesa (M) without a step.

[0145] The above ohmic layer (150) can be arranged on one surface of the second conductive semiconductor layer (120). The above ohmic layer (150) can be electrically connected to the second conductive semiconductor layer (120).

[0146] The above ohmic layer (150) can be arranged over almost the entire area of ​​the second conductive semiconductor layer (120) in the upper area of ​​the second conductive semiconductor layer (120). For example, the ohmic layer (150) can cover 80% or more, further 90% or more, of the upper area of ​​the second conductive semiconductor layer (120).

[0147] The above ohmic layer (150) may include a transparent layer. Therefore, the above ohmic layer (150) may transmit light generated in the active layer (130) and transmitted to the ohmic layer (150).

[0148] The above ohmic layer (150) may be a transparent electrode and may be a transparent oxide layer such as ITO or ZnO. Alternatively, the above ohmic layer (150) may be formed of a single transparent electrode or transparent metal.

[0149] In addition, the ohmic layer (150) may include a reflective metal layer. Therefore, the ohmic layer (150) may reflect light generated in the active layer (130) and traveling to the ohmic layer (150) toward the substrate (101). The ohmic layer (150) may be formed as a single reflective metal layer, but is not limited thereto. The ohmic layer (150) may include a transparent electrode layer and a reflective metal layer.

[0150] A metal layer such as Ni or a transparent oxide layer such as ITO may be used as the above ohmic layer (150), and a metal layer with high reflectivity such as Ag or Al may also be used.

[0151] The transparent electrode layer of the above ohmic layer (150) may be formed to have an arbitrary thickness. The ohmic layer (150) may have a thickness of 35 μm or less. When the thickness of the transparent electrode layer of the ohmic layer (150) is formed to be 35 μm or more, the efficiency of the electrical connection between the second conductive semiconductor layer (120) and the second metal layer (180) described below may be reduced. In addition, when the thickness of the transparent electrode layer of the ohmic layer (150) is formed to be 35 μm or more, the bonding strength between the ohmic layer (150) and the second conductive semiconductor layer (120) may be reduced.

[0152] The transparent electrode layer of the above ohmic layer (150) may include ITO or ZnO. The thickness of the above ohmic layer (150) may be formed to be 30 μm or less in at least some areas. When the above ohmic layer (150) is formed to be 30 μm or less, not only is the bonding strength between the ohmic layer (150) and the second conductive semiconductor layer (120) improved, but also the electrical characteristics between the second conductive semiconductor layer (120) and the second metal layer (180) may be improved. Accordingly, the internal quantum efficiency (EQE) of the light-emitting element (100) may be increased, thereby increasing the light extraction efficiency and improving the reliability.

[0153] The thickness of the transparent electrode layer of the above-mentioned ohmic layer (150) can be variously adjusted according to the planar horizontal and vertical sizes of the mesa (M), thereby improving the internal quantum efficiency (EQE). For example, when the planar size of the mesa (M) is 75 um x 30 um, the thickness of the transparent electrode layer can be formed to be 10 um or less. When the planar size of the mesa (M) is 75 um x 30 um or less, the thickness of the transparent electrode layer can be formed to be 5 um or less. Accordingly, the transparent electrode layer of 10 um or less formed on the mesa (M) having a planar size of 75 um x 30 um or less can more stably control the electrical characteristics of the current injected into the semiconductor layer, and can improve the transmission efficiency of the light emitted from the semiconductor layer. In addition, the dissipation efficiency of heat generated from the semiconductor layer can also be increased, and the reliability of the light-emitting element (100) can be improved by reducing ion mobility due to external moisture.

[0154] The light emitting element (100) may include a first metal layer (170) disposed on a first conductive semiconductor layer (110) exposed around a mesa (M) and a second metal layer (180) disposed on a second conductive semiconductor layer (120). The second metal layer (180) may be disposed on the ohmic layer (150).

[0155] The first metal layer (170) and the second metal layer (180) may include a reflective layer such as an Al layer. The reflective layer may include Ti, Cr, Ni, or the like, and may be formed on the adhesive layer. In addition, a protective layer having a single-layer or composite-layer structure such as Ni, Cr, or Au may be disposed on the reflective layer.

[0156] The insulating layer (160) may cover the first and second metal layers (170, 180) or the ohmic layer (150). The insulating layer (160) may also cover the upper surface of the mesa (M) exposed around the first and second metal layers (170, 180) or the ohmic layer (150) as well as the side surface of the mesa (M) along the perimeter thereof. In addition, the insulating layer (160) may at least partially cover the first conductive semiconductor layer (110) exposed around the mesa (M).

[0157] The above insulating layer (160) may include a first opening (162) exposing the first conductive semiconductor layer (110) and a second opening (164) exposing the second conductive semiconductor layer (120).

[0158] At least a portion of the first metal layer (170) may be exposed through the first opening (162). A portion of the first metal layer (170) may overlap with the first opening (162).

[0159] At least a portion of the second metal layer (180) may be exposed through the second opening (164). A portion of the second metal layer (180) or the ohmic layer (150) may overlap with the second opening (164).

[0160] The insulating layer (160) may cover the first conductive semiconductor layer (110) at the edge of the substrate (101). However, the insulating layer (160) may also expose a portion of the upper surface of the first conductive semiconductor layer (110) along the edge of the substrate (101). The shortest distance from the edge of the insulating layer (160) to the first metal layer (170) is preferably longer to prevent moisture from penetrating and damaging the first metal layer (170), and may be approximately 15 um or more. If the shortest distance from the edge of the insulating layer (160) to the first metal layer (170) is shorter than this, the first metal layer (170) is easily damaged by moisture when the light-emitting element (100) is operated at a low current, for example, 25 mA.

[0161] The insulating layer (160) may be formed as a single layer of SiO2 or Si3N4, but is not limited thereto. For example, the insulating layer (160) may have a multilayer structure including a silicon nitride film and a silicon oxide film. Alternatively, the insulating layer (160) may include a distributed Bragg reflector in which layers having different refractive indices are alternately laminated, such as a SiO2 layer, a TiO2 layer, a ZrO2 layer, a MgF2 layer, or a Nb2O5 layer.

[0162] In addition, the insulating layer (160) may have the same laminated structure in all parts, but is not limited thereto. For example, a specific part of the insulating layer (160) may have a laminated structure including a greater number of laminates than other parts. For example, the surrounding insulating layer (160) may have a greater number of laminates and a greater thickness than the insulating layer (160) on top of the ohmic layer (150).

[0163] Meanwhile, the light emitting element (100) may further include a first pad (192) electrically connected to a first metal layer (170) exposed through a first opening (162) of an insulating layer (160), and a second pad (194) electrically connected to a second metal layer (180) exposed through a second opening (162) of an insulating layer (160).

[0164] The first pad (192) and the second pad (194) may be arranged over the upper regions of the first metal layer (170) and the second metal layer (180), respectively. Accordingly, the first and second pads (192, 194) may be formed relatively large within the limited area of ​​the light emitting element (100).

[0165] The above first pad (192) and second pad (194) are parts for bonding the light emitting element (100) to a sub-mount or printed circuit board, etc., and can be formed of a material suitable for bonding.

[0166] For example, the first and second pads (192, 194) may include an Au layer or an AuSn layer. The first and second pads (192, 194) are connected to the first and second reflective layers (170, 180) exposed through the first and second openings (162, 164) of the insulating layer (160), respectively, and thus the heat dissipation performance of the light emitting element (100) may be improved.

[0167] FIG. 7 is a light-emitting device (200) according to another embodiment of the present invention. Hereinafter, the light-emitting device (200) will be described in detail, focusing on differences from the light-emitting device (100) according to the embodiment of FIG. 6. The light-emitting device (300) of FIG. 8 is a modified example of the light-emitting device (200) of FIG. 7.

[0168] The light emitting element (200, 300) of FIGS. 7 and 8 may be configured identically or similarly to the light emitting element (100) according to the embodiment of FIG. 6, except that it further includes a light filter (202, 302) covering at least a portion of the light emitting surface.

[0169] The active layer (230, 330) of the light-emitting element (200, 300) emits light having a first dominant wavelength, and the light filter (202, 302) can have the highest transmittance at the dominant wavelength.

[0170] Referring to FIGS. 7 and 8, the optical filter (202, 302) is disposed on a portion of the substrate (201, 301) and a semiconductor laminate, and may be disposed to cover one surface of the substrate (201, 301).

[0171] The optical filter (202, 302) may be positioned to expose at least a portion of the semiconductor laminate. In addition, the optical filter (202, 302) may include an insulating material.

[0172] The exposed area of ​​the above optical filter (202, 302) may be an opening for electrical connection between the light emitting element (200, 300) and an external power source. The optical filter (202, 302) may be arranged to expose one side and a part of the side surface of the semiconductor laminate. The optical filter (202, 303) may be arranged to cover the entire side surface of the semiconductor laminate, and may be arranged to open a part of one side surface.

[0173] The above optical filter (202, 302) may have the highest light transmittance at the main wavelength of the semiconductor laminate. The optical filter (202, 302) may have a transmittance of 50% or less for light having a wavelength that exists outside of -20 nm to +20 nm based on the main wavelength of the semiconductor laminate.

[0174] Accordingly, the light emitted through the optical filter (202, 302) may have an optical characteristic of a half-width of 40 nm or less. The optical filter (202, 302) may have a transmittance of 50% or less for light having a wavelength that is outside of -10 nm to +10 nm based on the main wavelength of the semiconductor laminate. Accordingly, the light emitted through the optical filter (202, 302) may have an optical characteristic of a half-width of 20 nm or less. Accordingly, the color purity and visibility of the light emitted from the light emitting element (200, 300) may be improved.

[0175] The above optical filter (202, 302) may be a color filter. Alternatively, the optical filter (202, 302) may be a band pass filter. Alternatively, the optical filter (202, 302) may include a distributed Bragg reflector in which layers having different refractive indices are alternately laminated, such as a SiO2 layer, a TiO2 layer, a ZrO2 layer, a MgF2 layer, or a Nb2O5 layer.

[0176] Meanwhile, the area of ​​the above-described light-emitting element (100, 200, 300) is 10,000 μm 2It may be less than or equal to. Alternatively, the longest length among the horizontal or vertical lengths of the light emitting element (100, 200, 300) may be less than or equal to 100 μm. When an electrical source such as current or voltage is supplied to the light emitting element (100, 200, 300), the light emitting element (100, 200, 300) may include a light emitting region (ER) from which light is emitted when viewed in the direction of one surface of the first conductive semiconductor layer (110) or one surface of the second conductive semiconductor layer (120). The light emitting region (ER) may be located in the inner region of the mesa (M).

[0177] The above-described light-emitting region (ER) may have the highest light-emitting intensity at its center and may have a decreasing light-emitting intensity as it moves away from the center. Alternatively, the light-emitting intensity at the center of the light-emitting region (ER) may be different from the light-emitting intensity at the edge of the light-emitting area.

[0178] Referring to FIG. 10, the light emitting element (100, 200, 300) described above may include at least one light emitting zone (LS) in the light emitting area (ER). That is, the light emitting zone (LS) may be arranged in an inner area of ​​the mesa (M). The light emitting zone (LS) may have the highest light emitting intensity at its center, and the light emitting intensity may decrease as it moves away from the center. Alternatively, the light emitting intensity at the center of the light emitting zone (LS) may be different from the light emitting intensity at the edge of the light emitting zone, and the light emitting intensity at the center may be higher. The shape of the light emitting zone (LS) may be circular or may be non-uniform. The light emitting zone (LS) may be arranged as an island.

[0179] The radius or shape of the above-described light-emitting area (LS) may change as the current changes. For example, the size of the light-emitting area (LS) formed by supplying a relatively low current to the light-emitting element (100, 200, 300) may be smaller than the size of the light-emitting area (LS) formed by supplying a relatively high current to the light-emitting element (100, 200, 300).

[0180] The above-mentioned light-emitting zone (LS) may be provided in one or multiple forms. The size or shape of at least one light-emitting zone (LS) may be different from the sizes or shapes of other light-emitting zones (LS). In addition, the light-emitting intensity of at least one light-emitting zone (LS) may be different from the light-emitting intensity of other light-emitting zones (LS).

[0181] The light-emitting module according to the present invention may include the light-emitting element (100, 200), 300) described above.

[0182] First, FIG. 9a is a light-emitting module according to the first embodiment of the present invention, which may be a light-emitting diode package (1000) including at least one light-emitting element (100, 200, 300).

[0183] The above light emitting diode package (1000) may include at least one light emitting element (100, 200, 300) and a lead frame (1010) on which the light emitting element (100, 200, 300) is mounted. The light emitting element (100, 200, 300) may be electrically connected to an electrode of the lead frame (1010) via a wire (W).

[0184] The lead frame (1010) may be provided with a cavity (C) in which the light-emitting element (100, 200, 300) is mounted. The side wall of the lead frame (1010) forming the cavity (C) forms an inclined surface, and the inclined surface may be a reflective surface on which light emitted from the light-emitting element (100, 200, 300) is reflected.

[0185] The above light emitting diode package (1000) may further include a molding part arranged in the cavity (C). The molding part may be a transparent molding. Alternatively, the molding part may include a wavelength conversion material. Alternatively, the molding part may further include a light absorbing material, a light reflecting material, or a light scattering material.

[0186] Next, the light emitting diode package (1000') of FIG. 9b is a modified example of the light emitting diode package (1000) of FIG. 9a, and can be configured identically or similarly to the light emitting diode package (1000) of FIG. 9a, except that the light emitting elements (100, 200, 300) are soldered to a lead frame (1010) through bumps in a flip chip form.

[0187] Next, Fig. 10 is a light-emitting module according to a second embodiment of the present invention, which may be a light-emitting module (2000) including at least one light-emitting element (100, 200, 300). The light-emitting module (2000) may include a substrate (2010) and at least one light-emitting element (100, 200, 300) disposed on the substrate (2010).

[0188] The light emitting module (2000) may include a plurality of light emitting elements (100, 200, 300). FIG. 10 illustrates an example in which the light emitting module (2000) includes two light emitting elements (100, 200, 300), but the present invention is not limited thereto. Referring to FIG. 10, the sizes or shapes of the light emitting areas (LS) included in each of the light emitting elements (100, 200, 300) may be different from each other. In addition, the light emitting intensities of the light emitting areas (LS) included in each of the light emitting elements (100, 200, 300) may be different from each other. In addition, the positions (i.e., (x, y) positions on the light emitting area (ER)) of the light emitting areas (LS) included in each of the light emitting elements (100, 200, 300) may be different from each other. In addition, the color coordinates of the light emitted from the light emitting area (LS) included in each light emitting element (100, 200, 300) may be different from each other. In addition, the peak wavelengths of the light emitted from each light emitting element (100, 200, 300) may be different from each other. In addition, the full width at half maximum (FWHM) of the light emitted from each light emitting element (100, 200, 300) may be different from each other. The light emitted from the light emitting area (LS) included in each light emitting element (100, 200, 300) may have a peak wavelength and a dominant wavelength, and the difference values ​​between the peak wavelength and the dominant wavelength in each light emitting element (100, 200, 300) may be different from each other.

[0189] Next, FIG. 11 is a light-emitting module according to a third embodiment of the present invention, and the light-emitting module may be a lighting device (3000) including at least one of the above-described light-emitting elements (100, 200, 300).

[0190] Referring to FIG. 11, the lighting device (3000) may include a diffusion cover (3010), a light source module (3020), and a body portion (3030). The body portion (3030) may accommodate the light source module (3020), and the diffusion cover (3010) may be placed on the body portion (3030) so as to cover the upper portion of the light emitting device module (3020).

[0191] The body part (3030) is not limited to a form that can accommodate and support the light source module (3020) and supply electrical power to the light source module (3020). For example, as illustrated, the body part (3030) may include a body case (3031), a power supply unit (3033), a power case (3035), and a power connection unit (3037).

[0192] The power supply unit (3033) is housed in a power case (3035) and is electrically connected to the light source module (3020), and may include at least one IC chip. The IC chip may adjust, convert, or control the characteristics of power supplied to the light source module (3020). The power case (3035) may house and support the power supply unit (3033), and the power case (3035) with the power supply unit (3033) fixed therein may be located inside the body case (3031). The power connection unit (3037) may be arranged at the bottom of the power case (3035) and may be connected to the power case (3035). Accordingly, the power connection unit (3037) may be electrically connected to the power supply unit (3033) inside the power case (3035), and may serve as a passage through which external power may be supplied to the power supply unit (3033).

[0193] The light source module (3020) may include a substrate (3023) and at least one light emitting element (100, 200, 300) arranged on the substrate (3023). The light source module (3020) may be provided on the upper portion of the body case (3031) and electrically connected to a power supply device (3033).

[0194] The substrate (3023) is not limited to any substrate capable of supporting the light-emitting element (100, 200, 300), and may be, for example, a printed circuit board including wiring. The substrate (3023) may have a shape corresponding to a fixing portion on the upper portion of the body case (3031) so as to be stably fixed to the body case (3031).

[0195] A diffusion cover (3010) is placed on a light-emitting element (100, 200, 300), and can be fixed to a body case (3031) to cover the light-emitting element (100, 200, 300). The diffusion cover (3010) can have a light-transmitting material, and the shape and light transmittance of the diffusion cover (3010) can be adjusted to control the directional characteristics of the lighting device (3000). Therefore, the diffusion cover (3010) can be transformed into various shapes depending on the purpose of use and application of the lighting device (3000).

[0196] Next, FIG. 12 is a cross-sectional view of a light-emitting module according to a fourth embodiment of the present invention, wherein the light-emitting module may be a display device (4000) including at least one of the above-described light-emitting elements (100, 200, 300).

[0197] The above display device (4000) may include a display panel (4110), a backlight unit that provides light to the display panel (4110), and a panel guide that supports the lower edge of the display panel (4110).

[0198] The display panel (4110) is not particularly limited and may be, for example, a liquid crystal display panel including a liquid crystal layer. A gate driving PCB that supplies a driving signal to the gate line may be further positioned at the edge of the display panel (4110). Here, the gate driving PCB may not be configured on a separate PCB, but may be formed on a thin film transistor substrate. The pixels of the display panel (4110) may be LED displays implemented by the light-emitting elements (100, 200, 300) of the present invention. If the display panel (4110) is an LED display, the backlight unit described below may be omitted.

[0199] The backlight unit may include a light source module including at least one substrate and a plurality of light-emitting elements (100, 200, 300). Furthermore, the backlight unit may further include a bottom cover (4180), a reflective sheet (4170), a diffusion plate (4131), and optical sheets (4130).

[0200] The bottom cover (4180) is opened upward and can accommodate a substrate, light emitting elements (100, 200, 300), a reflective sheet (4170), a diffusion plate (4131), and optical sheets (4130). In addition, the bottom cover (4180) can be combined with a panel guide. The substrate can be positioned below the reflective sheet (4170) and surrounded by the reflective sheet (4170). However, the substrate is not limited thereto, and if a reflective material is coated on the surface, the substrate can be positioned on the reflective sheet (4170). In addition, the substrate can be formed in a plurality of forms, and the substrate can be positioned in a form in which the substrates are arranged side by side, but the substrate is not limited thereto, and can be formed as a single substrate.

[0201] The light emitting elements (100, 200, 300) can be regularly arranged in a certain pattern on the substrate. In addition, a lens (4210) can be arranged on each light emitting element (100, 200, 300) to improve the uniformity of light emitted from the plurality of light emitting elements (4160).

[0202] The above diffusion plate (4131) and optical sheets (4130) are positioned on the light-emitting elements (100, 200, 300). Light emitted from the light-emitting elements (100, 200, 300) can be supplied to the display panel (4110) in the form of a surface light source through the diffusion plate (4131) and optical sheets (4130).

[0203] In this way, the light emitting element (100, 200, 300) according to embodiments of the present invention can be applied to a direct display device (4000) such as the present embodiment.

[0204] Next, FIG. 13 is a cross-sectional view of a light-emitting module according to a fifth embodiment of the present invention, wherein the light-emitting module may be a display device (5000) including at least one of the above-described light-emitting elements (100, 200, 300).

[0205] A display device (5000) equipped with a backlight unit according to a fifth embodiment includes a display panel (5210) on which an image is displayed, and a backlight unit disposed on the back surface of the display panel (5210) and irradiating light. Furthermore, the display device (5000) may include a frame that supports the display panel (5210) and houses the backlight unit, and a cover (5240, 5280) that surrounds the display panel (5210).

[0206] The display panel (5210) is not particularly limited and may be, for example, a liquid crystal display panel including a liquid crystal layer. A gate driving PCB that supplies a driving signal to the gate line may be further positioned at the edge of the display panel (5210). Here, the gate driving PCB may not be formed on a separate PCB, but may be formed on a thin film transistor substrate. The display panel (5210) is fixed by covers (5240, 5280) positioned at the upper and lower portions thereof, and the cover (5280) positioned at the lower portion may be connected to a backlight unit.

[0207] A backlight unit that provides light to a display panel (5210) includes a lower cover (5270) having a portion of an upper surface opened, a light source module disposed on one inner side of the lower cover (5270), and a light guide plate (5250) positioned parallel to the light source module to convert point light into surface light. In addition, the backlight unit of the present embodiment may further include optical sheets (5230) positioned on the light guide plate (5250) to diffuse and concentrate light, and a reflective sheet (5260) positioned below the light guide plate (5250) to reflect light traveling downward of the light guide plate (5250) toward the display panel (35210).

[0208] The light source module includes a substrate (5220) and a plurality of light emitting elements (100, 200, 300) spaced apart at regular intervals on one surface of the substrate (5220). The substrate (5220) is not limited to anything that supports the light emitting elements (100, 200, 300) and is electrically connected to the light emitting elements (100, 200, 300), and may be, for example, a printed circuit board.

[0209] Light emitted from a light source module may be incident on a light guide plate (5250) and supplied to a display panel (5210) through optical sheets (5230). Through the light guide plate (5250) and optical sheets (5230), point light sources emitted from light-emitting elements (100, 200, 300) may be transformed into surface light sources.

[0210] In this way, the light emitting element (100, 200, 300) according to the embodiments of the present invention can be applied to an edge-type display device (5000) such as the present embodiment.

[0211] Next, FIG. 14 is a cross-sectional view of a light-emitting module according to a sixth embodiment of the present invention, wherein the light-emitting module may be a head lamp (6000) including at least one of the above-described light-emitting elements (100, 200, 300).

[0212] Referring to FIG. 14, the head lamp (6000) may include a lamp body (6070), a substrate (6020), light emitting elements (100, 200, 300), and a cover lens (6050). Furthermore, the head lamp (6000) may further include a heat dissipation unit (6030), a support rack (6060), and a connecting member (6040).

[0213] The substrate (6020) may be fixed by a support rack (6060) and spaced apart from the lamp body (6070). The substrate (6020) is not limited to any substrate that can support the light-emitting elements (100, 200, 300), and may be, for example, a substrate having a conductive pattern such as a printed circuit board. The light-emitting elements (100, 200, 300) may be positioned on the substrate (6020) and supported and fixed by the substrate (6020). In addition, the light-emitting elements (100, 200, 300) may be electrically connected to an external power source through the conductive pattern of the substrate (6020).

[0214] The cover lens (6050) is positioned on the path along which light emitted from the light emitting elements (100, 200, 300) moves. For example, as illustrated, the cover lens (6050) may be spaced apart from the light emitting elements (100, 200, 300) by a connecting member (6040) and may be positioned in a direction in which light emitted from the light emitting elements (100, 200, 300) is desired to be provided. The angle of incidence and / or color of light emitted to the outside from the headlamp (6000) may be adjusted by the cover lens (6050).

[0215] Meanwhile, the connecting member (6040) may serve as a light guide that secures the cover lens (6050) to the substrate (6020) and surrounds the light-emitting element (100, 200, 300) to provide a light-emitting path (6045). At this time, the connecting member (6040) may be formed of a light-reflective material or coated with a light-reflective material. Meanwhile, the heat dissipation unit (6030) may include a heat dissipation fin (6031) and / or a heat dissipation fan (6033), and may dissipate heat generated when the light-emitting element (6010) is driven to the outside.

[0216] Next, FIGS. 15 and 16 are side views and plan views of a light-emitting module (7000) according to a seventh embodiment of the present invention, wherein the light-emitting module (7000) may include at least one of the above-described light-emitting elements (100, 200, 300) and a module substrate (7010) on which the light-emitting elements (100, 200, 300) are arranged. The light-emitting module (7000) may include a plurality of control zones (CR). The plurality of control zones (CR) may be individually controlled by a controller.

[0217] A plurality of control regions (CR) may include at least one light-emitting element (100, 200, 300). At least one of the plurality of control regions (CR) may include a plurality of light-emitting elements (100, 200, 300). When one control region (CR) includes a plurality of light-emitting elements (100, 200, 300), the plurality of light-emitting elements (100, 200, 300) may be individually turned on or sequentially turned on. The plurality of light-emitting elements (100, 200, 300) may have the same arrangement direction of the first conductive semiconductor layer (110, 210, 310) and the second conductive semiconductor layer (120, 220, 320). The plurality of light-emitting elements (100, 200, 300) may include the same Group 5 material.

[0218] The plurality of light-emitting elements (100, 200, 300) may have a peak wavelength of 500 nm to 600 nm. Alternatively, the plurality of light-emitting elements (100, 200, 300) may have a peak wavelength of 480 nm to 550 nm. Alternatively, the plurality of light-emitting elements (100, 200, 300) may have a peak wavelength of 430 nm to 480 nm. Alternatively, the plurality of light-emitting elements (100, 200, 300) may emit white light.

[0219] At least one of the plurality of control zones (CR) may include a plurality of light-emitting elements (100, 200, 300), and may include a plurality of groups within one control zone (CR). One group may include a plurality of light-emitting elements (100, 200, 300) that are electrically connected to each other. For example, one control zone (CR) may include a first group in which a plurality of light-emitting elements (100, 200, 300) are electrically connected to each other, and a second group in which a plurality of light-emitting elements (100, 200, 300) are electrically connected to each other. The plurality of groups may be individually controlled. For example, the first group and the second group may be individually controlled to be turned on.

[0220] The above multiple groups may be lit simultaneously or may be temporarily lit simultaneously. For example, the first group and the second group may be lit simultaneously or may be temporarily lit simultaneously.

[0221] The light emitting elements (100, 200, 300) included in the above plurality of groups may have a peak wavelength from 550 nm to 650 nm. For example, the light emitting elements (100, 200, 300) of the first group and the second group may have a peak wavelength from 550 nm to 650 nm.

[0222] The plurality of light-emitting elements (100, 200, 300) included in each group may have the same arrangement direction of the first conductive semiconductor layer (110, 210, 310) and the second conductive semiconductor layer (120, 220, 320). For example, the plurality of light-emitting elements (100, 200, 300) included in the first group may have the same arrangement direction of the first conductive semiconductor layer (110, 210, 310) and the second conductive semiconductor layer (120, 220, 320). The plurality of light-emitting elements (100, 200, 300) included in the second group may have the same arrangement direction of the first conductive semiconductor layer (110, 210, 310) and the second conductive semiconductor layer (120, 220, 320). The plurality of light-emitting elements (100, 200, 300) of the first group and the plurality of light-emitting elements (100, 200, 300) of the second group may have the same arrangement direction of the first conductive semiconductor layer (110, 210, 310) and the second conductive semiconductor layer (120, 220, 320).

[0223]

[0224] Although the present invention has been described above with reference to preferred embodiments thereof, it will be understood by those skilled in the art or having ordinary knowledge in the art that various modifications and changes to the present invention can be made without departing from the spirit and technical scope of the present invention as set forth in the claims to be described below.

[0225] Therefore, the technical scope of the present invention should not be limited to the contents described in the detailed description of the specification, but should be defined by the patent claims.

Claims

1. A light-emitting module comprising at least one light-emitting element, The light-emitting element includes a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and an electron-blocking layer disposed between the active layer and the second conductive semiconductor layer. A light emitting module wherein the electron blocking layer comprises one or more shading regions having a thickness thinner than adjacent regions.

2. In claim 1, A light emitting module in which the difference in lattice constant between the second conductive semiconductor layer and the shading region is smaller than the difference in lattice constant between the second conductive semiconductor layer and the shading region in any other region.

3. In claim 1, A light emitting module wherein the width of the shading region in the above electron blocking layer is smaller than the width of the adjacent shading region.

4. In claim 1, A light emitting module wherein the thickness of the above shading region is 70% or less of the thickness of the adjacent region.

5. In claim 1, The above shading region is a light emitting module which is a concave sunken region on one side of the electron blocking layer.

6. A light-emitting module comprising at least one light-emitting element, The light-emitting element includes a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and an electron-blocking layer disposed between the active layer and the second conductive semiconductor layer. A light emitting module wherein the electron blocking layer includes at least one open area penetrating through the upper and lower portions.

7. In claim 1, A light emitting module wherein the width of the open region in the above electron blocking layer is smaller than the width of the adjacent open region.

8. In claim 1, A light emitting module having a slope formed on the edge of the open area.

9. In claim 1, The second conductive semiconductor layer includes a second-first conductive semiconductor layer arranged on one side of the electron blocking layer, and a second-second conductive semiconductor layer arranged on one side of the second-first conductive semiconductor layer. A light emitting module wherein the concentration of the second conductive dopant of the second conductive semiconductor layer is higher than the concentration of the second conductive dopant of the second conductive semiconductor layer.

10. In claim 1, A light emitting module wherein the first challenge type semiconductor layer includes a superlattice layer disposed on one side of the active layer.

11. A light-emitting module comprising at least one light-emitting element, The light-emitting element includes a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer. The above active layer includes a multi-quantum well structure of alternately arranged barrier layers and well layers, A light emitting module wherein the well layer comprises one or more shading regions having a thickness thinner than adjacent regions.

12. In claim 11, A light emitting module wherein the mobility of holes in the shaded region is greater than the mobility of holes in other regions excluding the shaded region.

13. In claim 11, A light emitting module in which the width of the shading region in the above well layer is smaller than the width of the adjacent shading region.

14. In claim 11, A light emitting module wherein the thickness of the above shading region is 70% or less of the thickness of the adjacent region.

15. In claim 11, The above shading region is a light emitting module that is a concave sunken region on one side of the well layer.

16. A light-emitting module comprising at least one light-emitting element, The light-emitting element includes a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer. The above active layer includes a multi-quantum well structure of alternately arranged well layers and barrier layers, A light emitting module comprising at least one open area extending vertically through the well layer.

17. In claim 16, A light emitting module in which the width of the open area in the above well layer is smaller than the width of the adjacent open area.

18. In claim 16, The above open area includes an inlet and an outlet arranged opposite the inlet, the cross-sectional width of the inlet being different from the cross-sectional width of the outlet.

19. In any one of claims 1 to 17, The open area includes a side connecting an edge of the inlet and an edge of the outlet, the side being a light emitting module inclined with respect to the horizontal direction of the well layer.

20. In claim 16, A light emitting module in which the spacing between one open area and an adjacent open area in the above well layer is different from the width of the one open area and the adjacent open area.

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