Display device

Abstract

A display device according to one embodiment comprises: a substrate; a first electrode disposed on the substrate; a pixel defining layer covering an edge of the first electrode and partitioning light-emitting areas and a non-light-emitting area; a light-emitting layer disposed on the first electrode and the pixel defining layer; a second electrode disposed on the light-emitting layer; a thin film encapsulation layer disposed on the second electrode and including a first encapsulation layer, a second encapsulation layer disposed on the first encapsulation layer, and a third encapsulation layer disposed on the second encapsulation layer; and a wavelength conversion layer disposed on the thin film encapsulation layer and including a bank overlapping the non-light-emitting area, wherein the second encapsulation layer includes a first area overlapping the light-emitting areas and a second area not overlapping the light-emitting areas, and the thickness of the first area is greater than the thickness of the second area.

Description

display device

[0001] The present invention relates to a display device.

[0002] As the information society develops, the demand for display devices for displaying images is increasing in various forms. For example, display devices are being used in various electronic devices such as smartphones, digital cameras, laptop computers, navigation systems, and smart televisions.

[0003] The display device may be a flat panel display device such as a liquid crystal display device, a field emission display device, or a light emitting display device. The light emitting display device includes an organic light emitting display device including an organic light emitting element, an inorganic light emitting display device including an inorganic light emitting element such as an inorganic semiconductor, and an ultra-small light emitting display device including an ultra-solid light emitting element.

[0004] An organic light-emitting device may include two opposing electrodes and a light-emitting layer interposed therebetween. The light-emitting layer receives electrons and holes from the two electrodes, recombines them, and generates excitons. The generated excitons change from an excited state to a ground state, thereby emitting light.

[0005] Organic light-emitting display devices that include organic light-emitting elements are attracting attention as next-generation display devices because they do not require a light source such as a backlight unit, so they can be configured as thin, lightweight devices with low power consumption, and have high-quality characteristics such as a wide viewing angle, high brightness and contrast, and fast response speed.

[0006] The problem to be solved by the present invention is to provide a display device that can improve color matching rate by reducing color mixing.

[0007] The tasks of the present invention are not limited to the tasks mentioned above, and other technical tasks not mentioned will be clearly understood by those skilled in the art from the description below.

[0008] According to one embodiment of the present invention for solving the above problem, a display device includes a substrate, a first electrode disposed on the substrate, a pixel defining film covering an edge of the first electrode and dividing light-emitting areas and non-light-emitting areas, a light-emitting layer disposed on the first electrode and the pixel defining film, a second electrode disposed on the light-emitting layer, a thin film encapsulation layer disposed on the second electrode and including a first encapsulation layer, a second encapsulation layer disposed on the first encapsulation layer, and a third encapsulation layer disposed on the second encapsulation layer, and a wavelength conversion layer disposed on the thin film encapsulation layer and including a bank overlapping the non-light-emitting area, wherein the second encapsulation layer includes a first area overlapping the light-emitting areas and a second area non-overlapping the light-emitting areas, and a thickness of the first area may be greater than a thickness of the second area.

[0009] The first region may overlap with the non-luminescent region, and the second region may overlap with the non-luminescent region.

[0010] The first region may not overlap with the bank, and the second region may overlap with the bank.

[0011] The thickness of the second region may be 50 to 90% of the thickness of the first region.

[0012] The second sealing layer includes a groove formed on the surface of the second sealing layer, and the groove can be arranged in the second region.

[0013] The first region may be arranged to cover the light-emitting regions and be spaced apart from each other on a plane, and the second region may be arranged in a region other than the first region.

[0014] The second regions are spaced apart from each other and can be positioned between light-emitting regions that emit light of different colors.

[0015] It further includes a sealing pattern disposed between the second sealing layer and the third sealing layer, wherein the sealing pattern may overlap with the first region and may not overlap with the second region.

[0016] The above-mentioned encapsulation pattern may overlap with the above-mentioned light-emitting areas and may not overlap with the above-mentioned bank.

[0017] It further includes a fourth sealing layer disposed between the first sealing layer and the second sealing layer, and a fifth sealing layer disposed between the fourth sealing layer and the second sealing layer, wherein the first sealing layer, the third sealing layer, and the fifth sealing layer may include an inorganic material, and the second sealing layer and the fourth sealing layer may include an organic material.

[0018] The first sealing layer and the third sealing layer may include an inorganic material, and the second sealing layer may include an organic material.

[0019] The wavelength conversion layer may be disposed between the banks and may include a light-transmitting pattern, a first wavelength conversion pattern, and a second wavelength conversion pattern, each overlapping the light-emitting regions.

[0020] The wavelength conversion layer may further include a low-refractive-index layer disposed on the wavelength conversion layer, and a color filter layer disposed on the low-refractive-index layer and including a first color filter overlapping the light transmission pattern, a second color filter overlapping the first wavelength conversion pattern, and a third color filter overlapping the second wavelength conversion pattern.

[0021] In addition, according to one embodiment, a display device includes a substrate, a first electrode disposed on the substrate, a pixel defining film covering an edge of the first electrode and dividing light-emitting areas and non-light-emitting areas, a light-emitting layer disposed on the first electrode and the pixel defining film, a second electrode disposed on the light-emitting layer, a thin film encapsulation layer disposed on the second electrode and including a first encapsulation layer, an etch stopper layer disposed on the first encapsulation layer, a second encapsulation layer disposed on the etch stopper layer, and a third encapsulation layer disposed on the second encapsulation layer, and a wavelength conversion layer disposed on the thin film encapsulation layer and including a bank overlapping the non-light-emitting area, wherein the third encapsulation layer can contact the etch stopper layer in the non-light-emitting area.

[0022] The second sealing layer includes an opening exposing the etch stopper layer, and the third sealing layer can contact the etch stopper layer through the opening.

[0023] The above opening may overlap the non-luminous region and the bank.

[0024] The second sealing layer is disposed between the etch stopper layer and the third sealing layer, and can be covered by the etch stopper layer and the third sealing layer.

[0025] It further includes a fourth sealing layer disposed between the first sealing layer and the etch stopper layer, and the second sealing layer and the fourth sealing layer may include an organic material.

[0026] In addition, according to one embodiment, a display device includes a substrate, a first electrode disposed on the substrate, a pixel defining film covering an edge of the first electrode and dividing light-emitting areas and non-light-emitting areas, a light-emitting layer disposed on the first electrode and the pixel defining film, a second electrode disposed on the light-emitting layer, a thin film encapsulation layer disposed on the second electrode and including a first encapsulation layer, a second encapsulation layer and an organic layer disposed on the first encapsulation layer and spaced apart from each other, and a third encapsulation layer disposed on the second encapsulation layer and the organic layer, and a wavelength conversion layer disposed on the thin film encapsulation layer and including a bank overlapping the non-light-emitting area, wherein the third encapsulation layer can be in contact with the first encapsulation layer in the non-light-emitting area.

[0027] The second encapsulating layer overlaps the non-luminescent region and the bank and includes an opening exposing the first encapsulating layer, and the organic layer is disposed within the opening and can be in contact with the first encapsulating layer.

[0028] The third sealing layer covers the second sealing layer and the organic layer, and can be in contact with the first sealing layer through the opening.

[0029] The above bank can fill the opening on the third sealing layer.

[0030] The thickness of the organic layer may be smaller than the thickness of the second encapsulating layer.

[0031] The first sealing layer and the third sealing layer may include an inorganic material, and the second sealing layer may include an organic material.

[0032] Specific details of other embodiments are included in the detailed description and drawings.

[0033] A display device according to one embodiment can block light emitted from each light-emitting region to an adjacent light-emitting region by forming a second region in which a groove is formed in a second encapsulating layer of a thin film encapsulating layer and forming a bank on the groove. Accordingly, color mixing between each light-emitting region of the display device can be prevented, thereby improving color matching.

[0034] In addition, the display device according to one embodiment can prevent damage to lower layers during etching of an opening in a second encapsulation layer by forming an etch stopper layer on the thin film encapsulation layer.

[0035] The effects according to the embodiments are not limited to those exemplified above, and more diverse effects are included in this specification.

[0036] Figure 1 is a plan view of a display device according to one embodiment.

[0037] FIG. 2 is a schematic layout diagram showing wiring included in a display device according to one embodiment.

[0038] Figure 3 is an equivalent circuit diagram of one sub-pixel according to one embodiment.

[0039] Fig. 4 is a cross-sectional view schematically illustrating a display device according to one embodiment.

[0040] Fig. 5 is a cross-sectional view schematically illustrating a display device according to one embodiment.

[0041] FIG. 6 is a cross-sectional view schematically illustrating a portion of a first light-emitting area of ​​a display device according to one embodiment.

[0042] FIG. 7 is a plan view schematically illustrating an example of light-emitting areas of a display device according to one embodiment.

[0043] FIG. 8 is a plan view schematically illustrating another example of light-emitting areas of a display device according to one embodiment.

[0044] FIG. 9 is a cross-sectional view schematically illustrating a portion of a first light-emitting area of ​​a display device according to one embodiment.

[0045] Fig. 10 is a cross-sectional view schematically showing a display device according to another embodiment.

[0046] Fig. 11 is a cross-sectional view schematically showing a part of the first light-emitting area of ​​Fig. 10.

[0047] Fig. 12 is a cross-sectional view schematically showing a display device according to another embodiment.

[0048] Fig. 13 is a cross-sectional view schematically showing a portion of the first light-emitting area of ​​Fig. 12.

[0049] Fig. 14 is a plan view showing the arrangement of light-emitting areas of a display device according to another embodiment.

[0050] Figures 15 and 16 are cross-sectional views showing a method for manufacturing a thin film encapsulation layer of a display device according to another embodiment, step by step.

[0051] Fig. 17 is a cross-sectional view schematically showing a display device according to another embodiment.

[0052] Fig. 18 is a cross-sectional view schematically showing a portion of the first light-emitting area of ​​Fig. 17.

[0053] Fig. 19 is a plan view showing the arrangement of light-emitting areas of a display device according to another embodiment.

[0054] Fig. 20 is a cross-sectional view schematically showing a display device according to another embodiment.

[0055] Fig. 21 is a cross-sectional view schematically showing a portion of the first light-emitting area of ​​Fig. 20.

[0056] Fig. 22 is a cross-sectional view schematically showing a display device according to another embodiment.

[0057] Fig. 23 is a cross-sectional view schematically showing a portion of the first light-emitting area of ​​Fig. 22.

[0058] Fig. 24 is a plan view showing the arrangement of light-emitting areas of a display device according to another embodiment.

[0059] The advantages and features of the present invention, and the methods for achieving them, will become clearer with reference to the embodiments described in detail below together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various different forms. These embodiments are provided solely to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention, and the present invention is defined solely by the scope of the claims.

[0060] When an element or layer is referred to as "on" another element or layer, it includes both cases where it is directly above the other element or layer or where there is another layer or material intervening therebetween. Similarly, when an element or layer is referred to as "below," "left," and "right," it includes both cases where it is directly adjacent to the other element or where there is another layer or material intervening therebetween. Like reference numerals throughout the specification refer to like elements.

[0061] Although terms like "first" and "second" are used to describe various components, these components are not limited by these terms. These terms are used merely to distinguish one component from another. Therefore, it should be understood that a "first" component referred to below may also be a "second" component within the technical scope of the present invention.

[0062] Hereinafter, embodiments will be described with reference to the attached drawings.

[0063] Figure 1 is a plan view of a display device according to one embodiment.

[0064] Referring to FIG. 1, a display device (10) according to one embodiment can be applied to various home appliances such as a smart phone, a mobile phone, a tablet PC, a PDA (Personal Digital Assistant), a PMP (Portable Multimedia Player), a television, a game console, a wristwatch-type electronic device, a head-mounted display, a monitor of a personal computer, a laptop computer, an automobile navigation system, an automobile dashboard, a digital camera, a camcorder, an external billboard, an electronic display, a medical device, an inspection device, a refrigerator, a washing machine, or the like, or an Internet of Things device. In this specification, a television is described as an example of the display device (10), and the TV can have a high resolution or ultra-high resolution such as HD, UHD, 4K, or 8K.

[0065] In addition, the display device (10) according to one embodiment may be classified in various ways according to the display method. For example, the classification of the display device (10) may include an organic light emitting display (OLED), an inorganic light emitting display (inorganic EL), a quantum dot light emitting display (QED), a micro LED display (micro-LED), a nano LED display (nano-LED), a plasma display (PDP), a field emission display (FED), a cathode ray tube display (CRT), a liquid crystal display (LCD), an electrophoretic display (EPD), etc. In the following, an organic light emitting display and an inorganic light emitting display will be described as examples of the display device (10), and unless a special distinction is required, the display devices applied to the embodiments will be simply abbreviated as display devices. However, the embodiments are not limited to the organic light emitting display or the inorganic light emitting display, and other display devices listed above or known in the art may be applied within the scope of sharing the technical idea.

[0066] The display device (10) according to one embodiment may have a square shape in a plan view, for example, a rectangular shape. If the display device (10) is a television, it is arranged so that the long side is positioned in the horizontal direction. However, the display device (10) is not limited thereto, and the long side may be positioned in the vertical direction, and may be installed so as to be rotatable so that the long side is variably positioned in the horizontal or vertical direction.

[0067] The display device (10) may include a display area (DPA) and a non-display area (NDA). The display area (DPA) may be an active area where an image is displayed. The display area (DPA) may have a rectangular shape in a plan view similar to the overall shape of the display device (10), but is not limited thereto.

[0068] The display area (DPA) may include a plurality of pixels (PX). The plurality of pixels (PX) may be arranged in a matrix direction. The shape of each pixel (PX) may be a rectangle or a square in a plan view, but is not limited thereto, and may also be a rhombus shape with each side inclined with respect to one side direction of the display device (10). The plurality of pixels (PX) may include multi-color pixels (PX). For example, the plurality of pixels (PX) may include, but are not limited to, a first color pixel (PX) of red, a second color pixel (PX) of green, and a third color pixel (PX) of blue. Each color pixel (PX) may be a stripe type or a PenTile type. TM ) can be arranged alternately as types.

[0069] A non-display area (NDA) may be arranged around the display area (DPA). The non-display area (NDA) may completely or partially surround the display area (DPA). The display area (DPA) has a rectangular shape, and the non-display area (NDA) may be arranged adjacent to the four sides of the display area (DPA). The non-display area (NDA) may form a bezel of the display device (10).

[0070] A driving circuit or driving element for driving the display area (DPA) may be arranged in the non-display area (NDA). In one embodiment, a pad portion may be provided on the display substrate of the display device (10) in the first non-display area (NDA1) adjacent to the first long side (the lower side in FIG. 1) of the display device (10) and in the second non-display area (NDA2) adjacent to the second long side (the upper side in FIG. 1), and an external device (EXD) may be mounted on the pad electrode of the pad portion. Examples of the external device (EXD) may include a connection film, a printed circuit board, a driving chip (DIC), a connector, a wiring connection film, and the like. A scan driving unit (SDR), or the like, which is directly formed on the display substrate of the display device (10), may be arranged in the third non-display area (NDA3) adjacent to the first short side (the left side in FIG. 1) of the display device (10). However, the present invention is not limited thereto, and a scan driver (SDR) may be placed in a fourth non-display area (NDA4) adjacent to the second short side (right side in FIG. 1) of the display device (10).

[0071] FIG. 2 is a schematic layout diagram showing wiring included in a display device according to one embodiment.

[0072] Referring to FIG. 2, the display device (10) may include a plurality of wires. The plurality of wires may include a scan line (SCL), a sensing line (SSL), a data line (DTL), an initialization voltage wire (VIL), a first voltage wire (VDL), and a second voltage wire (VSL). In addition, although not shown in the drawing, the display device (10) may further include other wires.

[0073] A scan line (SCL) and a sensing line (SSL) may extend in a first direction (DR1). The scan line (SCL) and the sensing line (SSL) may be connected to a scan driver (SDR). The scan driver (SDR) may include a driving circuit. The scan driver (SDR) may be arranged on one side of the display area (DPA) in the first direction (DR1), but is not limited thereto. The scan driver (SDR) is connected to a signal connection line (CWL), and at least one end of the signal connection line (CWL) may form a pad (WPD_CW) on a pad area (PDA) of a non-display area and be connected to an external device.

[0074] Meanwhile, the meaning of "connection" in this specification may refer not only to a connection between one member and another member through mutual physical contact, but also to a connection through another member. Furthermore, this may be understood as a single, integrated member in which one part and another part are interconnected by the integrated member. Furthermore, the connection between one member and another member may be interpreted to include not only a direct connection but also an electrical connection through another member.

[0075] The data line (DTL) and the initialization voltage line (VIL) may extend in a second direction (DR2) intersecting the first direction (DR1). The initialization voltage line (VIL) may further include a portion branched from the first direction (DR1) in addition to a portion extending in the second direction (DR2). The first voltage line (VDL) and the second voltage line (VSL) may also include a portion extending in the second direction (DR2) and a portion connected thereto and extending in the first direction (DR1). The first voltage line (VDL) and the second voltage line (VSL) may have a mesh structure, but are not limited thereto. Although not illustrated in the drawing, each pixel (PX) of the display device (10) may be connected to at least one data line (DTL), an initialization voltage line (VIL), a first voltage line (VDL), and a second voltage line (VSL).

[0076] A data line (DTL), an initialization voltage line (VIL), a first voltage line (VDL), and a second voltage line (VSL) can be electrically connected to at least one wiring pad (WPD). Each wiring pad (WPD) can be arranged in a pad area (PDA). In one embodiment, a wiring pad (WPD_DT, hereinafter referred to as a 'data pad') of a data line (DTL) is arranged in a pad area (PDA) on one side of a second direction (DR2) of a display area (DPA), and a wiring pad (WPD_Vint, hereinafter referred to as an 'initialization voltage pad') of an initialization voltage line (VIL), a wiring pad (WPD_VDD, hereinafter referred to as a 'first power pad') of a first voltage line (VDL), and a wiring pad (WPD_VSS, hereinafter referred to as a 'second power pad') of a second voltage line (VSL) can be arranged in a pad area (PDA) located on the other side of the second direction (DR2) of the display area (DPA). As another example, the data pad (WPD_DT), the initialization voltage pad (WPD_Vint), the first power pad (WPD_VDD), and the second power pad (WPD_VSS) may all be positioned in the same area, for example, the non-display area (NDA) located above the display area (DPA). An external device (EXD) may be mounted on the wiring pad (WPD). The external device (EXD) may be mounted on the wiring pad (WPD) using an anisotropic conductive film, ultrasonic bonding, or the like.

[0077] Each pixel (PX) or sub-pixel (SPX) of the display device (10) includes a pixel driving circuit. The above-described wires may pass through each pixel (PX) or its surroundings to apply a driving signal to each pixel driving circuit. The pixel driving circuit may include a transistor and a capacitor. The number of transistors and capacitors of each pixel driving circuit may be variously modified. According to one embodiment, each sub-pixel (SPX) of the display device (10) may have a 3T1C structure in which the pixel driving circuit includes three transistors and one capacitor. Hereinafter, the pixel driving circuit will be described using the 3T1C structure as an example, but the present invention is not limited thereto, and various other modified pixel (PX) structures such as a 2T1C structure, a 7T1C structure, and a 6T1C structure may be applied.

[0078] Figure 3 is an equivalent circuit diagram of one sub-pixel according to one embodiment.

[0079] Referring to FIG. 3, each sub-pixel (SPX) of a display device (10) according to one embodiment includes, in addition to a light-emitting element (ED), three transistors (DTR, STR1, STR2) and one storage capacitor (CST).

[0080] The light-emitting element (ED) emits light according to the current supplied through the driving transistor (DTR). The light-emitting element (ED) can be implemented as an inorganic light-emitting diode, an organic light-emitting diode, a micro light-emitting diode, a nano light-emitting diode, etc.

[0081] A first electrode (i.e., an anode electrode) of the light emitting element (ED) may be connected to a source electrode of a driving transistor (DTR), and a second electrode (i.e., a cathode electrode) may be connected to a second power line (ELVSL) to which a low-potential voltage (a second power voltage) lower than a high-potential voltage (a first power voltage) of a first power line (ELVDL) is supplied.

[0082] The driving transistor (DTR) controls the current flowing from the first power line (ELVDL) to which the first power voltage is supplied to the light-emitting element (ED) according to the voltage difference between the gate electrode and the source electrode. The gate electrode of the driving transistor (DTR) may be connected to the first electrode of the first transistor (STR1), the source electrode may be connected to the first electrode of the light-emitting element (ED), and the drain electrode may be connected to the first power line (ELVDL) to which the first power voltage is applied.

[0083] The first transistor (STR1) is turned on by a scan signal of a scan line (SCL) to connect the data line (DTL) to the gate electrode of the driving transistor (DTR). The gate electrode of the first transistor (STR1) may be connected to the scan line (SCL), the first electrode may be connected to the gate electrode of the driving transistor (DTR), and the second electrode may be connected to the data line (DTL).

[0084] The second transistor (STR2) is turned on by a sensing signal of the sensing signal line (SSL) to connect the initialization voltage line (VIL) to the source electrode of the driving transistor (DTR). The gate electrode of the second transistor (STR2) may be connected to the sensing signal line (SSL), the first electrode may be connected to the initialization voltage line (VIL), and the second electrode may be connected to the source electrode of the driving transistor (DTR).

[0085] In one embodiment, the first electrode of each of the first and second transistors (STR1, STR2) may be a source electrode and the second electrode may be a drain electrode, but the present invention is not limited thereto and vice versa.

[0086] A capacitor (CST) is formed between the gate electrode and the source electrode of the driving transistor (DTR). The storage capacitor (CST) stores the difference between the gate voltage and the source voltage of the driving transistor (DTR).

[0087] The driving transistor (DTR) and the first and second transistors (STR1, STR2) may be formed as thin film transistors. In addition, although FIG. 3 has been described with the focus on the driving transistor (DTR) and the first and second switching transistors (STR1, STR2) being N-type MOSFETs (Metal Oxide Semiconductor Field Effect Transistors), the present invention is not limited thereto. That is, the driving transistor (DTR) and the first and second switching transistors (STR1, STR2) may be P-type MOSFETs, or some may be N-type MOSFETs and others may be P-type MOSFETs.

[0088] Fig. 4 is a cross-sectional view schematically illustrating a display device according to one embodiment.

[0089] Referring to FIG. 4, a display device (10) according to one embodiment may include a substrate (SUB), a light emitting element layer (EML), a thin film encapsulation layer (TFEL), a wavelength conversion layer (WCL), a low refractive index layer (LRL), a color filter layer (CFL), and an optical function layer (LFL).

[0090] The substrate (SUB) may be an insulating substrate. The substrate (SUB) may include a transparent material. For example, the substrate (SUB) may include a transparent insulating material such as glass, quartz, etc. The substrate (SUB) may be a rigid substrate. Furthermore, the substrate (SUB) is not limited thereto, and may include a plastic such as polyimide, etc., and may have flexible characteristics such as being able to be bent, folded, or rolled.

[0091] An emission layer (EML) may be disposed on a substrate (SUB). The emission layer (EML) may include a plurality of switching elements and a plurality of light-emitting elements (EDs) disposed in each sub-pixel. The plurality of switching elements may drive the plurality of light-emitting elements (EDs) to emit light from the plurality of light-emitting elements (EDs).

[0092] A thin film encapsulation layer (TFEL) may be disposed on the light emitting device layer (EML). The thin film encapsulation layer (TFEL) includes an organic film disposed between a plurality of inorganic films, and may protect the light emitting device layer (EML) from external moisture and oxygen.

[0093] A wavelength conversion layer (WCL) may be disposed on a thin film encapsulation layer (TFEL). The wavelength conversion layer (WCL) may convert the wavelength of light emitted from the light emitting element layer (EML) to emit red light, green light, and blue light.

[0094] A low-refractive-index layer (LRL) may be positioned on a wavelength conversion layer (WCL). The low-refractive-index layer (LRL) is a layer with a relatively low refractive index, and can improve light emission efficiency by allowing light emitted from the lower layer to be refracted upward due to the difference in refractive index.

[0095] A color filter layer (CFL) may be disposed on the low refractive index layer (LRL). The color filter layer (CFL) can filter light incident from the outside, thereby reducing reflection of external light and improving the color characteristics of light emitted through the wavelength conversion layer (WCL).

[0096] An optical function layer (LFL) may be disposed on the color filter layer (CFL). The optical function layer (LFL) may be an anti-reflection layer that prevents the reflection of external light. The optical function layer (LFL) may be attached in the form of a film or formed through a coating method. However, this is not limited to this, and an anti-fingerprint layer, etc. may also be disposed.

[0097] Fig. 5 is a cross-sectional view schematically illustrating a display device according to one embodiment. Fig. 6 is a cross-sectional view schematically illustrating a portion of a first light-emitting area of ​​a display device according to one embodiment. Fig. 7 is a plan view schematically illustrating an example of light-emitting areas of a display device according to one embodiment. Fig. 8 is a plan view schematically illustrating another example of light-emitting areas of a display device according to one embodiment. Fig. 9 is a cross-sectional view schematically illustrating a portion of a first light-emitting area of ​​a display device according to one embodiment.

[0098] Referring to FIGS. 5 and 6, a display device (10) according to one embodiment may include a substrate (SUB), a light emitting element layer (EML), a thin film encapsulation layer (TFEL), a wavelength conversion layer (WCL), a low refractive index layer (LRL), a color filter layer (CFL), and an optical function layer (LFL).

[0099] A substrate (SUB) may define a plurality of light-emitting areas (LA1, LA2, LA3) and a non-light-emitting area (NLA). The plurality of light-emitting areas (LA1, LA2, LA3) may be areas where light generated from light-emitting elements (ED1, ED2, ED3) is emitted to the outside, and the non-light-emitting area (NLA) may be an area where light is not emitted to the outside. In one embodiment, a first light-emitting area (LA1), a second light-emitting area (LA2), and a third light-emitting area (LA3) may be sequentially and repeatedly arranged along a first direction (DR1) in the display area (DPA).

[0100] The first light-emitting area (LA1), the second light-emitting area (LA2), and the third light-emitting area (LA3) may have different widths measured in the first direction (DR1). For example, the width of the first light-emitting area (LA1) may be smaller than the width of the third light-emitting area (LA3), and the width of the third light-emitting area (LA3) may be smaller than the width of the second light-emitting area (LA2). However, the present invention is not limited thereto, and the widths of the first light-emitting area (LA1), the second light-emitting area (LA2), and the third light-emitting area (LA3) may be the same as each other when measured in the first direction (DR1).

[0101] Each of the light-emitting areas (LA1, LA2, LA3) can emit light of a different color. In one embodiment, the first light-emitting area (LA1) can emit light of a first color, the second light-emitting area (LA2) can emit light of a second color, and the third light-emitting area (LA3) can emit light of a third color. In one embodiment, the light of the first color can be blue light having a peak wavelength in a range of about 440 nm to about 480 nm, the light of the second color can be red light having a peak wavelength in a range of about 610 nm to about 650 nm, and the light of the third color can be green light having a peak wavelength in a range of about 510 nm to about 550 nm. However, the present invention is not limited thereto, and the light of the second color can be green light and the light of the third color can be red light.

[0102] Switching elements (T1, T2, T3) may be arranged on a substrate (SUB). In one embodiment, a first switching element (T1) may be positioned in a first light-emitting area (LA1) of the substrate (SUB), a second switching element (T2) may be positioned in a second light-emitting area (LA2), and a third switching element (T3) may be positioned in a third light-emitting area (LA3). However, this is not limited thereto, and in another embodiment, at least one of the first switching element (T1), the second switching element (T2), and the third switching element (T3) may be positioned in a non-light-emitting area (NLA).

[0103] In one embodiment, the first switching element (T1), the second switching element (T2), and the third switching element (T3) may each be a thin film transistor including amorphous silicon, polysilicon, or an oxide semiconductor. In addition, although not shown in the drawing, a plurality of signal lines (e.g., gate lines, data lines, power lines, etc.) for transmitting signals to each switching element may be further arranged on the substrate (SUB). In addition, each of the switching elements (T1, T2, and T3) may be configured to include a first insulating layer (120). For example, the first insulating layer (120) may be a gate insulating film or an interlayer insulating film of the thin film transistor. The gate insulating film or the interlayer insulating film may be formed of a single layer including any one of silicon oxide (SiOx), silicon nitride oxide (SiOxNy), and silicon nitride (SiNx), or a multilayer thereof.

[0104] A second insulating layer (130) may be positioned on the first switching element (T1), the second switching element (T2), and the third switching element (T3). In one embodiment, the second insulating layer (130) may be a planarizing film. In one embodiment, the second insulating layer (130) may be formed of an organic film. For example, the second insulating layer (130) may include an acrylic resin, an epoxy resin, an imide resin, an ester resin, or the like. In one embodiment, the second insulating layer (130) may include a positive photosensitive material or a negative photosensitive material.

[0105] A first anode electrode (AE1), a second anode electrode (AE2), and a third anode electrode (AE3) may be positioned on the second insulating layer (130). The first anode electrode (AE1) may be positioned in the first light-emitting area (LA1), but at least a portion thereof may extend to the non-light-emitting area (NLA). The second anode electrode (AE2) may be positioned in the second light-emitting area (LA2), but at least a portion thereof may extend to the non-light-emitting area (NLA). The third anode electrode (AE3) may be positioned in the third light-emitting area (LA3), but at least a portion thereof may extend to the non-light-emitting area (NLA). The first anode electrode (AE1) may be connected to the first switching element (T1) by penetrating the second insulating layer (130), the second anode electrode (AE2) may be connected to the second switching element (T2) by penetrating the second insulating layer (130), and the third anode electrode (AE3) may be connected to the third switching element (T3) by penetrating the second insulating layer (130).

[0106] In one embodiment, the widths or areas of the first anode electrode (AE1), the second anode electrode (AE2), and the third anode electrode (AE3) may be different from each other. For example, the width of the first anode electrode (AE1) may be smaller than the width of the second anode electrode (AE2), and the width of the third anode electrode (AE3) may be smaller than the width of the second anode electrode (AE2) and larger than the width of the first anode electrode (AE1). Alternatively, the area of ​​the first anode electrode (AE1) may be smaller than the area of ​​the second anode electrode (AE2), and the area of ​​the third anode electrode (AE3) may be smaller than the area of ​​the second anode electrode (AE2) and larger than the area of ​​the first anode electrode (AE1). Alternatively, the area of ​​the first anode electrode (AE1) may be smaller than the area of ​​the second anode electrode (AE2), and the area of ​​the third anode electrode (AE3) may be larger than the area of ​​the second anode electrode (AE2) and the area of ​​the first anode electrode (AE1). However, this is not limited to the above-described embodiment. In another embodiment, the widths or areas of the first anode electrode (AE1), the second anode electrode (AE2), and the third anode electrode (AE3) may be substantially the same.

[0107] The first anode electrode (AE1), the second anode electrode (AE2), and the third anode electrode (AE3) may be reflective electrodes. The first anode electrode (AE1), the second anode electrode (AE2), and the third anode electrode (AE3) may have a laminated film structure in which a material layer having a high work function, such as ITO (indium tin oxide), IZO (indium zinc oxide), ZnO (zinc oxide), ITZO (indium tin zinc oxide), or indium oxide (In2O3), is laminated with a reflective material layer, such as silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), lead (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), or a mixture thereof. The material layer having a high work function may be disposed above the reflective material layer and close to the light-emitting layer (OL). The first anode electrode (AE1), the second anode electrode (AE2), and the third anode electrode (AE3) may have a multilayer structure of ITO / Mg, ITO / MgF, ITO / Ag, or ITO / Ag / ITO, but are not limited thereto.

[0108] A pixel defining film (150) may be positioned on the first anode electrode (AE1), the second anode electrode (AE2), and the third anode electrode (AE3). The pixel defining film (150) may include an opening exposing the first anode electrode (AE1), an opening exposing the second anode electrode (AE2), and an opening exposing the third anode electrode (AE3), and may define a first light-emitting area (LA1), a second light-emitting area (LA2), a third light-emitting area (LA3), and a non-light-emitting area (NLA). That is, an area of ​​the first anode electrode (AE1) that is exposed and not covered by the pixel defining film (150) may be the first light-emitting area (LA1). An area of ​​the second anode electrode (AE2) that is exposed and not covered by the pixel defining film (150) may be the second light-emitting area (LA2). The area of ​​the third anode electrode (AE3) that is not covered by the pixel defining film (150) and is exposed may be a third light-emitting area (LA3). The area where the pixel defining film (150) is located may be a non-light-emitting area (NLA).

[0109] The pixel defining film (150) may include an organic insulating material such as polyacrylates resin, epoxy resin, phenolic resin, polyamides resin, polyimides rein, unsaturated polyesters resin, polyphenylenes resin, polyphenylenesulfides resin, or benzocyclobutene (BCB).

[0110] In one embodiment, the pixel defining film (150) may overlap with the bank (180) of the wavelength conversion layer (WCL) to be described later. An emission layer (OL) may be disposed on the first anode electrode (AE1), the second anode electrode (AE2), and the third anode electrode (AE3). In one embodiment in which the display device (10) is an organic light emitting display device, the emission layer (OL) may include an organic layer including an organic material. The organic layer includes an organic emission layer, and in some cases, may further include at least one of a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer as an auxiliary layer that assists light emission.

[0111] In one embodiment, the light-emitting layer (OL) may have a tandem structure including a plurality of organic light-emitting layers that are overlapped in the thickness direction and a charge generation layer disposed therebetween. Each of the overlapping organic light-emitting layers may emit light of the same wavelength, but may also emit light of different wavelengths. For example, each of the overlapping organic light-emitting layers may include an organic light-emitting layer that emits light of a green wavelength and an organic light-emitting layer that emits light of a blue wavelength. In another exemplary embodiment, each of the overlapping organic light-emitting layers may include an organic light-emitting layer that emits light of a red wavelength, an organic light-emitting layer that emits light of a green wavelength, and an organic light-emitting layer that emits light of a blue wavelength.

[0112] In one embodiment, the light-emitting layer (OL) may have the shape of a continuous film formed across a plurality of light-emitting regions (LA1, LA2, LA3) and a non-light-emitting region (NLA). In this case, the wavelength of light emitted by the light-emitting layer (OL) may be the same. For example, the light-emitting layer (OL) may emit blue light, light of a white wavelength, or ultraviolet light in the plurality of light-emitting regions (LA1, LA2, LA3).

[0113] A cathode electrode (CE) may be positioned on the light-emitting layer (OL). In one embodiment, the cathode electrode (CE) may be semi-permeable or transmissive. When the cathode electrode (CE) is semi-permeable, the cathode electrode (CE) may include Ag, Mg, Cu, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, LiF / Ca, LiF / Al, Mo, Ti, or compounds or mixtures thereof, for example, a mixture of Ag and Mg. In addition, when the thickness of the cathode electrode (CE) is tens to hundreds of angstroms, the cathode electrode (CE) may be semi-permeable.

[0114] When the cathode electrode (CE) is transparent, the cathode electrode (CE) may include a transparent conductive oxide (TCO). For example, the cathode electrode (CE) may include tungsten oxide (WxOy), titanium oxide (TiO2), indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium tin zinc oxide (ITZO), magnesium oxide (MgO), etc.

[0115] A first anode electrode (AE1), a light-emitting layer (OL), and a cathode electrode (CE) may form a first light-emitting element (ED1), a second anode electrode (AE2), a light-emitting layer (OL), and a cathode electrode (CE) may form a second light-emitting element (ED2), and a third anode electrode (AE3), a light-emitting layer (OL), and a cathode electrode (CE) may form a third light-emitting element (ED3). The first light-emitting element (ED1), the second light-emitting element (ED2), and the third light-emitting element (ED3) each emit source light, and the source light may be provided to a wavelength conversion layer (WCL). The source light may be, for example, blue light, but is not limited thereto, and may be white light or ultraviolet light. The first light-emitting element (ED1), the second light-emitting element (ED2), and the third light-emitting element (ED3) may be organic light-emitting diodes.

[0116] A thin film encapsulation layer (TFEL) may be positioned on the cathode electrode (CE). The thin film encapsulation layer (TFEL) may be commonly positioned in the first light-emitting region (LA1), the second light-emitting region (LA2), the third light-emitting region (LA3), and the non-light-emitting region (NLA). In one embodiment, the thin film encapsulation layer (TFEL) may directly cover the cathode electrode (CE).

[0117] In one embodiment, the thin film encapsulation layer (TFEL) may include a first encapsulation layer (171), a second encapsulation layer (173), and a third encapsulation layer (175) sequentially stacked on a cathode electrode (CE).

[0118] The first encapsulating layer (171) may be disposed on the cathode electrode (CE). The first encapsulating layer (171) directly covers the cathode electrode (CE) of the light emitting element layer (EML), thereby preventing moisture or foreign substances from penetrating into the light emitting element layer (EML). The first encapsulating layer (171) may include an inorganic material. For example, the first encapsulating layer (171) may include one or more of silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, silicon oxynitride, and lithium fluoride. However, the present invention is not limited thereto.

[0119] The second sealing layer (173) may be placed on the first sealing layer (171). The second sealing layer (173) may prevent foreign substances or particles from being placed on the first sealing layer (171) and thereby deteriorating the sealing properties. For example, the second sealing layer (173) may be formed to a thick thickness to cover foreign substances or particles, thereby preventing the sealing properties from being deteriorated.

[0120] The second sealing layer (173) may include an organic material. For example, the second sealing layer (173) may include an acrylic resin, a methacrylate resin, a polyisoprene, a vinyl resin, an epoxy resin, a urethane resin, a cellulose resin, a perylene resin, and the like. However, the present invention is not limited thereto.

[0121] In one embodiment, the second encapsulation layer (173) may include a first region (MOL1) and a second region (MOL2).

[0122] The first region (MOL1) overlaps with each of the light-emitting regions (LA1, LA2, LA3) and may be a region having a relatively thick thickness in the second sealing layer (173). The first region (MOL1) may correspond to a region where light emitted from each of the light-emitting elements (ED1, ED2, ED3) is substantially output to the wavelength conversion layer (WCL). Therefore, the first region (MOL1) may be arranged to cover at least each of the light-emitting regions (LA1, LA2, LA3). The first region (MOL1) may be arranged to overlap at least a portion of the non-light-emitting region (NLA). The first region (MOL1) may be arranged to not overlap with a bank (180) of the wavelength conversion layer (WCL) described below.

[0123] The second region (MOL2) is a region that does not overlap with each of the light-emitting regions (LA1, LA2, LA3) and may be a region having a thickness smaller than the first region (MOL1) of the second encapsulation layer (173). The second region (MOL2) may be a region disposed between each of the light-emitting regions (LA1, LA2, LA3). The second region (MOL2) may be disposed to overlap with the non-light-emitting region (NLA). In some embodiments, the second region (MOL2) may completely overlap with the non-light-emitting region (NLA). The second region (MOL2) may be disposed to overlap with the bank (180) of the wavelength conversion layer (WCL) described below.

[0124] The second encapsulating layer (173) may include a groove (GRO) formed on the surface. The second region (MOL2) may be a region in which the groove (GRO) is arranged in the second encapsulating layer (173). The groove (GRO) may have a concave shape in the thickness direction from the surface of the second encapsulating layer (173). The second region (MOL2) may have a thickness smaller than the first region (MOL1) due to the groove (GRO). The groove (GRO) may be arranged to overlap the second region (MOL2). In some embodiments, the groove (GRO) may completely overlap the second region (MOL2). The groove (GRO) may have a predetermined depth, and the depth of the groove (GRO) may be a vertical distance from the surface of the first region (MOL1) to the surface of the second region (MOL2).

[0125] The first region (MOL1) may have a first thickness (TT1), and the second region (MOL2) may have a second thickness (TT2). The first thickness (TT1) of the first region (MOL1) may be greater than the second thickness (TT2) of the second region (MOL2). For example, the first thickness (TT1) may be 1 to 10 μm, and the second thickness (TT2) may be 50 to 90% of the first thickness (TT1). When the first thickness (TT1) or the second thickness (TT2) is within the above range, when a foreign substance is placed on the first sealing layer (171), the foreign substance can be completely covered, thereby improving the sealing characteristics.

[0126] As illustrated in FIG. 7, the first region (MOL1) of the second encapsulating layer (173) may have a larger area than each of the light-emitting regions (LA1, LA2, LA3). The first region (MOL1) may be arranged to completely cover each of the light-emitting regions (LA1, LA2, LA3). The first regions (MOL1) may be arranged to be spaced apart from each other.

[0127] The second region (MOL2) does not overlap with each of the light-emitting regions (LA1, LA2, LA3) and may be arranged in a region other than the first region (MOL1). For example, the first region (MOL1) may be arranged spaced apart from each other in a shape similar to that of each of the light-emitting regions (LA1, LA2, LA3) and may be arranged in a dot shape on a plane. The second region (MOL2) may be arranged in a shape surrounding the first region (MOL1). The planar arrangement of the groove (GRO) arranged in the second region (MOL2) may also be arranged in the same manner as that of the second region (MOL2).

[0128] Referring to FIG. 8, in another exemplary embodiment, the first region (MOL1) may be arranged to cover each of the light-emitting regions (LA1, LA2, LA3) and may be formed in a planar matrix shape. The second region (MOL2) may not overlap with each of the light-emitting regions (LA1, LA2, LA3). The second region (MOL2) may be arranged in a planar dot array, and the planar arrangement of the grooves (GRO) arranged in the second region (MOL2) may also be arranged in the same manner as in the second region (MOL2).

[0129] The second region (MOL2) may be spaced apart from each other and disposed between light-emitting regions (LA1, LA2, LA3) that emit light of different colors. For example, the second region (MOL2) may be disposed between the first light-emitting region (LA1) and the second light-emitting region (LA2), between the second light-emitting region (LA2) and the third light-emitting region (LA3), and between the third light-emitting region (LA3) and the first light-emitting region (LA1). The second region (MOL2) may not be disposed between light-emitting regions (LA1, LA2, LA3) that emit light of the same color. For example, the second region (MOL2) may not be disposed between the first light-emitting regions (LA1), between the second light-emitting regions (LA2), and between the third light-emitting regions (LA3). However, the present invention is not limited thereto, and the second region (MOL2) may be disposed between light-emitting regions (LA1, LA2, LA3) that emit light of the same color.

[0130] In this embodiment, by arranging the second region (MOL2) of the second sealing layer (173) in the non-luminous region (NLA) and forming a bank (180) of a wavelength conversion layer (WCL) described later thereon, it is possible to prevent color mixing in which light emitted from each luminous region (LA1, LA2, LA3) is emitted to an adjacent luminous region (LA1, LA2, LA3).

[0131] As illustrated in FIG. 9, most of the light emitted from the first light-emitting element (ED1) is emitted to the light transmission pattern (230) of the wavelength conversion layer (WCL), but some of the light may be emitted to an adjacent light-emitting area. When a second area (MOL2) in which a groove (GRO) is formed in the second encapsulation layer (173) is formed, the bank (180) may be arranged to be lowered further toward the pixel defining film (150). Since the bank (180) includes a light-blocking / absorbing material, it may block or absorb light emitted to an adjacent light-emitting area, thereby preventing color mixing. Therefore, the color matching rate of the display device (10) may be improved.

[0132] Meanwhile, a third encapsulating layer (175) may be disposed on the second encapsulating layer (173). The third encapsulating layer (175) may be disposed to cover both the first region (MOL1) and the second region (MOL2) of the second encapsulating layer (173), thereby preventing moisture or foreign substances from penetrating into the second encapsulating layer (173). The third encapsulating layer (175) may include an inorganic material. For example, the third encapsulating layer (175) may include one or more of silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, silicon oxynitride, and lithium fluoride. However, the present invention is not limited thereto.

[0133] However, the structure of the thin film encapsulation layer (TFEL) is not limited to the above-described example, and the stacked structure of the thin film encapsulation layer (TFEL) can be changed in various ways.

[0134] Referring again to FIGS. 5 and 6, a wavelength conversion layer (WCL) may be disposed on a thin film encapsulation layer (TFEL). The wavelength conversion layer (WCL) may include a bank (180), a light transmitting pattern (230), a first wavelength conversion pattern (240), a second wavelength conversion pattern (250), and a capping layer (300).

[0135] The bank (180) may be arranged on a thin film encapsulation layer (TFEL). The bank (180) may partition light-emitting areas (LA1, LA2, LA3) and a non-light-emitting area (NLA). The bank (180) may be arranged to overlap the non-light-emitting area (NLA) to block light transmission. More specifically, the bank (180) may be positioned between the light-transmitting pattern (230) and the first wavelength conversion pattern (240), between the first wavelength conversion pattern (240) and the second wavelength conversion pattern (250), and between the second wavelength conversion pattern (250) and the light-transmitting pattern (230), thereby preventing color mixing between adjacent light-emitting areas.

[0136] In addition, the bank (180) may be arranged so as not to overlap with the first region (MOL1) of the second encapsulation layer (173) of the thin film encapsulation layer (TFEL) and to overlap with the second region (MOL2). For example, the bank (180) may be arranged in the groove (GRO) of the second region (MOL2). Accordingly, among the light emitted from each light emitting region (LA1, LA2, LA3), transmission of light emitted to an adjacent light emitting region can be blocked. Accordingly, color mixing between adjacent light emitting regions can be prevented.

[0137] The bank (180) may include an organic light-shielding material and may be formed through a coating and exposure process of the organic light-shielding material, an inkjet method, or the like. For example, the bank (180) may include an organic material and a dye or pigment having light-shielding properties mixed with the organic material. The organic material may include an acrylic resin, a methacrylate resin, a polyisoprene, a vinyl resin, an epoxy resin, a urethane resin, a cellulose resin, a perylene resin, and the like. The dye or pigment may include carbon black, and the like.

[0138] The light-transmitting pattern (230) may be arranged on a thin film encapsulation layer (TFEL). The light-transmitting pattern (230) may overlap the first light-emitting area (LA1). The light-transmitting pattern (230) may transmit incident light. When the source light provided from the first light-emitting element (ED1) is blue light, the blue source light may transmit through the light-transmitting pattern (230).

[0139] In one embodiment, the light transmitting pattern (230) may include a first base resin (231) and may further include a first scatterer (233) dispersed within the first base resin (231).

[0140] The first base resin (231) may be formed of a material with high light transmittance. In one embodiment, the first base resin (231) may be formed of an organic material. For example, the first base resin (231) may include an organic material such as an epoxy resin, an acrylic resin, a cardo resin, or an imide resin.

[0141] The first scatterer (233) may have a different refractive index from the first base resin (231) and may form an optical interface with the first base resin (231). For example, the first scatterer (233) may be a light-scattering particle. The first scatterer (233) is not particularly limited as long as it is a material capable of scattering at least a portion of transmitted light, but may be, for example, a metal oxide particle or an organic particle. Examples of the metal oxide include titanium oxide (TiO2), zirconium oxide (ZrO2), aluminum oxide (Al2O3), indium oxide (In2O3), zinc oxide (ZnO), or tin oxide (SnO2), and examples of the organic particle material include an acrylic resin or a urethane resin. The first scatterer (233) may scatter light in a random direction regardless of the incident direction of the incident light without substantially converting the wavelength of the light transmitting the light transmission pattern (230).

[0142] In one embodiment, the light-transmitting pattern (230) may be formed by applying a photosensitive material and exposing and developing the same. However, the present invention is not limited thereto, and the light-transmitting pattern (230), the first wavelength conversion pattern (240), and the second wavelength conversion pattern (250) may also be formed using an inkjet method.

[0143] The first wavelength conversion pattern (240) and the second wavelength conversion pattern (250) can be arranged on a thin film encapsulation layer (TFEL).

[0144] The first wavelength conversion pattern (240) is positioned on the thin film encapsulation layer (TFEL) and may overlap with the second light-emitting area (LA2). The first wavelength conversion pattern (240) may convert or shift the peak wavelength of incident light into light of another specific peak wavelength and emit the light. In one embodiment, the first wavelength conversion pattern (240) may convert the source light provided from the second light-emitting element (ED2) into red light having a peak wavelength in the range of about 610 nm to about 650 nm and emit the converted light.

[0145] The first wavelength conversion pattern (240) may include a second base resin (241) and a first wavelength shifter (245) dispersed within the second base resin (241), and may further include a second scatterer (243) dispersed within the second base resin (241).

[0146] The second base resin (241) may be formed of a material with high light transmittance. In one embodiment, the second base resin (241) may be formed of an organic material. The second base resin (241) may be formed of the same material as the first base resin (231), or may include at least one of the materials exemplified as constituent materials of the first base resin (231).

[0147] The first wavelength shifter (245) can convert or shift the peak wavelength of incident light to another specific peak wavelength. In one embodiment, the first wavelength shifter (245) can convert and emit the source light provided from the second light-emitting element (ED2), for example, light of a first color, which is blue light, into red light having a single peak wavelength in the range of about 610 nm to about 650 nm.

[0148] Examples of the first wavelength shifter (245) include quantum dots, quantum rods, or fluorescent materials. For example, quantum dots may be particulate materials that emit a specific color when electrons transition from the conduction band to the valence band.

[0149] The above quantum dot may be a semiconductor nanocrystal material. The quantum dot may have a specific band gap depending on its composition and size, and may absorb light and then emit light with a unique wavelength. Examples of the semiconductor nanocrystal of the quantum dot include group IV nanocrystals, group II-VI compound nanocrystals, group III-V compound nanocrystals, group IV-VI nanocrystals, or combinations thereof.

[0150] The II-VI group compound is a binary compound selected from the group consisting of CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS and mixtures thereof; a ternary compound selected from the group consisting of InZnP, AgInS, CuInS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS and mixtures thereof; and a group consisting of four-element compounds selected from the group consisting of HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe and mixtures thereof.

[0151] The group III-V compound may be selected from the group consisting of binary compounds selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, and mixtures thereof; ternary compounds selected from the group consisting of GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, InPSb, GaAlNP, and mixtures thereof; and quaternary compounds selected from the group consisting of GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, and mixtures thereof.

[0152] The group IV-VI compound may be selected from the group consisting of a binary compound selected from the group consisting of SnS, SnSe, SnTe, PbS, PbSe, PbTe, and mixtures thereof; a ternary compound selected from the group consisting of SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, and mixtures thereof; and a quaternary compound selected from the group consisting of SnPbSSe, SnPbSeTe, SnPbSTe, and mixtures thereof. The group IV element may be selected from the group consisting of Si, Ge, and mixtures thereof. The group IV compound may be a binary compound selected from the group consisting of SiC, SiGe, and mixtures thereof.

[0153] Here, binary, ternary, or quaternary compounds may exist within the particle at a uniform concentration, or may exist within the same particle with partially different concentration distributions. Furthermore, one quantum dot may have a core / shell structure surrounding another quantum dot. The interface between the core and shell may have a concentration gradient, with the concentration of the element in the shell decreasing toward the center.

[0154] In one embodiment, the quantum dot may have a core-shell structure comprising a core comprising the aforementioned nanocrystals and a shell surrounding the core. The shell of the quantum dot may function as a protective layer to maintain semiconductor properties by preventing chemical modification of the core and / or as a charging layer to impart electrophoretic properties to the quantum dot. The shell may be a single layer or a multilayer. Examples of the shell of the quantum dot include a metal or non-metal oxide, a semiconductor compound, or a combination thereof.

[0155] For example, the oxide of the metal or non-metal may be a binary compound such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, NiO, or a ternary compound such as MgAl2O4, CoFe2O4, NiFe2O4, CoMn2O4, but the present invention is not limited thereto.

[0156] In addition, the semiconductor compound may include, but is not limited to, CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, etc.

[0157] The light emitted by the first wavelength shifter (245) may have a full width at half maximum (FWHM) of an emission wavelength spectrum of about 45 nm or less, or about 40 nm or less, or about 30 nm or less, thereby further improving the color purity and color reproducibility of the color displayed by the display device (10). In addition, the light emitted by the first wavelength shifter (245) may be emitted in various directions regardless of the incident direction of the incident light. This may improve the side visibility of the second color displayed in the second emission area (LA2).

[0158] Some of the source light provided from the second light-emitting element (ED2) may not be converted into red light by the first wavelength shifter (245). However, the light among the source light that is not converted into red light may be blocked by the color filter layer (CFL) disposed above. On the other hand, the red light among the source light converted by the first wavelength conversion pattern (240) passes through the color filter layer (CFL) and is emitted to the outside.

[0159] The second scatterer (243) may have a different refractive index from the second base resin (241) and may form an optical interface with the second base resin (241). For example, the second scatterer (243) may be a light scattering particle. A detailed description of the second scatterer (243) is substantially the same as or similar to the description of the first scatterer (233), and thus will be omitted.

[0160] The second wavelength conversion pattern (250) is positioned on the thin film encapsulation layer (TFEL) and can overlap with the third light-emitting area (LA3). The second wavelength conversion pattern (250) can convert or shift the peak wavelength of incident light into light of another specific peak wavelength and emit the light. In one embodiment, the second wavelength conversion pattern (250) can convert the source light provided from the third light-emitting element (ED3) into green light in the range of about 510 nm to about 550 nm and emit the converted light.

[0161] The second wavelength conversion pattern (250) may include a third base resin (251) and a second wavelength shifter (255) dispersed within the third base resin (251), and may further include a third scatterer (253) dispersed within the third base resin (251).

[0162] The third base resin (251) may be formed of a material with high light transmittance. In one embodiment, the third base resin (251) may be formed of an organic material. The third base resin (251) may be formed of the same material as the first base resin (231), or may include at least one of the materials exemplified as constituent materials of the first base resin (231).

[0163] The second wavelength shifter (255) can convert or shift the peak wavelength of incident light to another specific peak wavelength. In one embodiment, the second wavelength shifter (255) can convert source light having a peak wavelength in the range of 440 nm to 480 nm, for example, blue light, into green light having a peak wavelength in the range of 510 nm to 550 nm.

[0164] Examples of the second wavelength shifter (255) include quantum dots, quantum rods, or fluorescent materials. A more specific description of the second wavelength shifter (255) will be omitted as it is substantially the same as or similar to that described above in the description of the first wavelength shifter (245). In one embodiment, both the first wavelength shifter (245) and the second wavelength shifter (255) may be formed of quantum dots. In this case, the particle size of the quantum dots forming the first wavelength shifter (245) may be larger than the particle size of the quantum dots forming the second wavelength shifter (255).

[0165] The third scatterer (253) may have a different refractive index than the third base resin (251) and may form an optical interface with the third base resin (251). For example, the third scatterer (253) may be a light scattering particle. A detailed description of the third scatterer (253) is omitted as it is substantially the same as or similar to the description of the second scatterer (243).

[0166] The second wavelength conversion pattern (250) may be provided with source light emitted from the third light-emitting element (ED3), and the second wavelength shifter (255) may convert the source light provided from the third light-emitting element (ED3) into green light having a peak wavelength in the range of about 510 nm to about 550 nm and emit the converted light.

[0167] Some of the source light may not be converted into green light by the second wavelength shifter (255) and may pass through the second wavelength conversion pattern (250). However, the light that is not converted into green light may be blocked by the color filter layer (CFL). On the other hand, the green light converted by the second wavelength conversion pattern (250) among the source light may pass through the color filter layer (CFL) and be emitted to the outside.

[0168] The capping layer (300) can be arranged on the bank (180), the light-transmitting pattern (230), the first wavelength conversion pattern (240), and the second wavelength conversion pattern (250) to cover them. Accordingly, it is possible to prevent impurities such as moisture or air from penetrating from the outside and damaging or contaminating the bank (180), the light-transmitting pattern (230), the first wavelength conversion pattern (240), and the second wavelength conversion pattern (250).

[0169] The capping layer (300) may be made of an inorganic material. For example, the capping layer (300) may include silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, and silicon oxynitride.

[0170] The low-refractive-index layer (LRL) may be disposed on the wavelength conversion layer (WCL). For example, the low-refractive-index layer (LRL) may be disposed directly on the capping layer (300) of the wavelength conversion layer (WCL). The low-refractive-index layer (LRL) may be disposed over the entire display area ('DPA' in FIG. 1) of the display device (10). For example, the low-refractive-index layer (LRL) may be disposed on the light-emitting areas (LA1, LA2, LA3) and the non-light-emitting area (NLA) in the display area. The low-refractive-index layer (320) has a relatively lower refractive index than the light transmission pattern (230), the first wavelength conversion pattern (240), the second wavelength conversion pattern (250), and the capping layer (300), and may serve to improve light emission efficiency by allowing light emitted from the bottom to be refracted upward due to the difference in refractive index.

[0171] The low refractive index layer (LRL) may include pores dispersed in a transparent resin. The resin may include one or more selected from the group consisting of acryl, polysiloxane, polyurethane, polyurethane acrylate, polyimide, polymethylsilsesquioxane (PMSSQ), and poly(methyl methacrylate) (PMMA). The pores are holes containing air and may be randomly dispersed within the resin.

[0172] Additionally, the low refractive index layer (LRL) may further include hollow particles. The hollow particles may include one or more selected from the group consisting of silica (SiO2), magnesium fluoride (MgF2), and iron oxide (Fe3O4). For example, the hollow particles may include a shell made of one or more of the above materials and a hollow space within the shell. In an exemplary embodiment, the diameter of the hollow particles may be, but is not limited to, 20 to 200 nm.

[0173] A color filter layer (CFL) may be disposed on the low refractive index layer (LRL). The color filter layer (CFL) may include a first color filter (350), a second color filter (360), and a third color filter (370). In addition, the color filter layer may include a first color pattern (355), a second color pattern (365), and a third color pattern (375).

[0174] The first color filter (350) may be arranged to overlap with the third light-emitting area (LA3). The first color filter (350) may be arranged to overlap with the third light-emitting element (ED3) and the second wavelength conversion pattern (250). The first color pattern (355) may be arranged to be spaced apart from the first color filter (350) and to overlap with the non-light-emitting area (NLA). The first color filter (350) may be in direct contact with the low-refractive-index layer (LRL).

[0175] The first color filter (350) and the first color pattern (355) can selectively transmit the third color light (e.g., green light) and block or absorb the first color light (e.g., blue light) and the second color light (e.g., red light). In one embodiment, the first color filter (350) can be a green color filter and can include a green colorant such as a green dye or a green pigment. In this specification, the colorant is a concept that includes both a dye and a pigment.

[0176] The second color filter (360) may overlap the second light-emitting area (LA2). The second color filter (360) may overlap the second light-emitting element (ED2) and the first wavelength conversion pattern (240). In one embodiment, one side of the second color filter (360) may overlap the non-light-emitting area (NLA) and may overlap the adjacent first color filter (350). The other side of the second color filter (360) may overlap the non-light-emitting area (NLA) and may overlap the first color pattern (355). The second color pattern (365) may be spaced apart from the second color filter (360) and may overlap the non-light-emitting area (NLA). The second color pattern (365) may be arranged to overlap the first color filter (350) in the non-light-emitting area (NLA). The second color filter (360) can be in direct contact with the low refractive index layer (LRL).

[0177] The second color filter (360) and the second color pattern (365) can selectively transmit light of a second color (e.g., red light) and block or absorb light of a first color (e.g., blue light) and light of a third color (e.g., green light). For example, the second color filter (360) can be a red color filter and can include a red coloring material such as a red dye or a red pigment.

[0178] The third color filter (370) may overlap the first light-emitting area (LA1). The third color filter (370) may overlap the first light-emitting element (ED1) and the light-transmitting pattern (230). In one embodiment, one side of the third color filter (370) may overlap the non-light-emitting area (NLA) and may overlap the adjacent second color filter (360). In addition, the other side of the third color filter (370) may overlap the non-light-emitting area (NLA) and may overlap the adjacent first color filter (350) and the second color pattern (365). The third color pattern (375) may be spaced apart from the third color filter (370) and may overlap the non-light-emitting area (NLA). The third color pattern (375) may be arranged to overlap the second color filter (360) in the non-light-emitting area (NLA). The third color filter (370) and the third color pattern (375) can be in direct contact with the low refractive index layer (LRL).

[0179] The third color filter (370) can selectively transmit light of a first color (e.g., blue light) and block or absorb light of a second color (e.g., red light) and light of a third color (e.g., green light). For example, the third color filter (370) can be a blue color filter and can include a blue coloring material such as a blue dye or a blue pigment.

[0180] As described above, the first to third color filters (350, 360, 370) and the first to third color patterns (355, 365, 375) may overlap in the non-emissive area (NLA) to block or absorb light. For example, the first color pattern (355), the second color filter (360), and the third color filter (370) may overlap in the non-emissive area (NLA) arranged on one side of the second emissive area (LA2), and the first color filter (350), the second color filter (360), and the third color pattern (375) may overlap in the non-emissive area (NLA) arranged on the other side of the second emissive area (LA2).

[0181] The overcoat layer (380) can be disposed on the first to third color filters (350, 360, 370) and the first to third color patterns (355, 365, 375). The overcoat layer (380) can flatten the upper portion of the color filter layer (CFL) to improve the adhesion reliability of the optical function layer (LFL) described later.

[0182] The overcoat layer (380) may be made of an organic material. For example, the overcoat layer (380) may include an acrylic resin, a methacrylate resin, a polyisoprene, an imide resin, a vinyl resin, an epoxy resin, a urethane resin, a cellulose resin, a perylene resin, and the like.

[0183] An optical function layer (LFL) may be disposed on the color filter layer (CFL). For example, the optical function layer (LFL) may be disposed directly on the overcoat layer (380) of the color filter layer (CFL). The optical function layer (LFL) may be an anti-reflection layer that prevents reflection of external light. The optical function layer (LFL) may be attached in the form of a film or formed by a coating method. However, the present invention is not limited thereto, and an anti-fingerprint layer, etc. may also be disposed.

[0184] As described above, the display device (10) according to the present embodiment forms a second region (MOL2) in which a groove (GRO) is formed in the second encapsulation layer (173) of the thin film encapsulation layer (TFEL), and forms a bank (180) in the groove (GRO), thereby blocking light emitted from each light-emitting region (LA1, LA2, LA3) to an adjacent light-emitting region. Accordingly, color mixing of each light-emitting region (LA1, LA2, LA3) of the display device (10) can be prevented, thereby improving the color matching rate.

[0185] Hereinafter, other embodiments will be described with reference to other drawings.

[0186] Fig. 10 is a cross-sectional view schematically illustrating a display device according to another embodiment. Fig. 11 is a cross-sectional view schematically illustrating a portion of the first light-emitting area of ​​Fig. 10. Figs. 10 and 11 show areas corresponding to Figs. 5 and 6 described above, respectively.

[0187] Referring to FIGS. 10 and 11, the present embodiment differs from the embodiments of FIGS. 5 to 9 described above in that the thin film encapsulation layer (TFEL) further includes a fourth encapsulation layer (172) and a fifth encapsulation layer (177). Hereinafter, descriptions overlapping with the above-described embodiments will be omitted and the differences will be described.

[0188] A thin film encapsulation layer (TFEL) of a display device (10) according to one embodiment may include a first encapsulation layer (171), a second encapsulation layer (173), a third encapsulation layer (175), a fourth encapsulation layer (172), and a fifth encapsulation layer (177).

[0189] The first encapsulating layer (171) is disposed on the light emitting element layer (EML), and the second encapsulating layer (173) may be disposed on the first encapsulating layer (171). Unlike the above-described embodiment, the second encapsulating layer (173) may fill the lower step and have a flat upper portion. For example, the second encapsulating layer (173) may have the same height measured from the substrate (SUB) in each of the light emitting areas (LA1, LA2, LA3) and the non-light emitting area (NLA). A third encapsulating layer (175) may be disposed on the second encapsulating layer (173). The third encapsulating layer (175) may be flat due to the flat upper portion of the second encapsulating layer (173).

[0190] The first sealing layer (171), the second sealing layer (173), and the third sealing layer (175) can be made of the same material as the above-described embodiment, so their description is omitted.

[0191] A fourth encapsulation layer (172) may be placed on the third encapsulation layer (175), and a fifth encapsulation layer (177) may be placed on the fourth encapsulation layer (172).

[0192] The fourth encapsulation layer (172) may include a first region (MOL1) and a second region (MOL2).

[0193] The first region (MOL1) overlaps with each of the light-emitting regions (LA1, LA2, LA3) and may be a region having a relatively thick thickness in the fourth encapsulation layer (172). The fourth encapsulation layer (172) may correspond to a region where light emitted from each of the light-emitting elements (ED1, ED2, ED3) is substantially output to the wavelength conversion layer (WCL). Therefore, the first region (MOL1) may be arranged to cover at least each of the light-emitting regions (LA1, LA2, LA3). The first region (MOL1) may be arranged to overlap at least a portion of the non-light-emitting region (NLA). The first region (MOL1) may be arranged to not overlap with the bank (180) of the wavelength conversion layer (WCL).

[0194] The second region (MOL2) is a region that does not overlap with each of the light-emitting regions (LA1, LA2, LA3) and may be a region having a smaller thickness than the first region (MOL1) of the fourth encapsulation layer (172). The second region (MOL2) may be a region disposed between each of the light-emitting regions (LA1, LA2, LA3). The second region (MOL2) may be disposed to overlap with the non-light-emitting region (NLA). In some embodiments, the second region (MOL2) may completely overlap with the non-light-emitting region (NLA). The second region (MOL2) may be disposed to overlap with the bank (180) of the wavelength conversion layer (WCL).

[0195] The second region (MOL2) may be a region in which a groove (GRO) is formed in the fourth encapsulating layer (172). The groove (GRO) may have a concave shape in the thickness direction from the surface of the fourth encapsulating layer (172). The second region (MOL2) may have a thickness smaller than that of the first region (MOL1) due to the groove (GRO). The groove (GRO) may be arranged to overlap the second region (MOL2). In some embodiments, the groove (GRO) may completely overlap the second region (MOL2). The groove (GRO) may have a predetermined depth, and the depth of the groove (GRO) may be a vertical distance from the surface of the first region (MOL1) to the surface of the second region (MOL2).

[0196] The first region (MOL1) may have a first thickness (TT1), and the second region (MOL2) may have a second thickness (TT2). The first thickness (TT1) of the first region (MOL1) may be greater than the second thickness (TT2) of the second region (MOL2). For example, the first thickness (TT1) may be 1 to 5 μm, and the second thickness (TT2) may be 50 to 90% of the first thickness (TT1).

[0197] Meanwhile, the arrangement of the first region (MOL1), the second region (MOL2) and the groove (GRO) of the fourth sealing layer (172) is the same as that shown in FIGS. 7 and 8 described above, and therefore, description thereof is omitted.

[0198] In this embodiment, by arranging the second region (MOL2) of the fourth sealing layer (172) in the non-luminous region (NLA) and forming a bank (180) of a wavelength conversion layer (WCL) thereon, color mixing in which light emitted from each luminous region (LA1, LA2, LA3) is emitted to an adjacent luminous region (LA1, LA2, LA3) can be prevented.

[0199] In particular, in the present embodiment, a third encapsulation layer (175) can be placed between the second encapsulation layer (173) and the fourth encapsulation layer (172). If the patterning process for forming a groove (GRO) in the second encapsulation layer (173) as shown in FIG. 5 described above is not possible during the manufacturing process of the thin film encapsulation layer (TFEL), the encapsulation characteristics can be secured by forming a third encapsulation layer (175) on the second encapsulation layer (173). Thereafter, a patterning process for additionally forming a fourth encapsulation layer (172) to form a groove (GRO) can be performed. Accordingly, there is an advantage in that the reliability of the thin film encapsulation film (TFEL) can be secured while simultaneously preventing color mixing.

[0200] A fifth encapsulating layer (177) may be disposed on the fourth encapsulating layer (172). The fifth encapsulating layer (177) may be disposed to cover both the first region (MOL1) and the second region (MOL2) of the fourth encapsulating layer (172), thereby preventing moisture or foreign substances from penetrating into the fourth encapsulating layer (172). The fifth encapsulating layer (177) may include the same material as the first encapsulating layer (171) and the third encapsulating layer (175) described above.

[0201] Fig. 12 is a cross-sectional view schematically illustrating a display device according to another embodiment. Fig. 13 is a cross-sectional view schematically illustrating a portion of the first light-emitting area of ​​Fig. 12. Fig. 14 is a plan view illustrating the arrangement of light-emitting areas of a display device according to another embodiment. Figs. 15 and 16 are cross-sectional views illustrating a method for manufacturing a thin film encapsulation layer of a display device according to another embodiment, step by step.

[0202] Referring to FIGS. 12 to 14, the display device (10) according to the present embodiment is different from the embodiments of FIGS. 5 to 9 described above in that it further includes a sealing pattern (TFP) disposed between the second sealing layer (173) and the third sealing layer (175) of the thin film encapsulation layer (TFEL).

[0203] A thin film encapsulation layer (TFEL) of a display device (10) according to one embodiment may include a first encapsulation layer (171), a second encapsulation layer (173), a third encapsulation layer (175), and an encapsulation pattern (TFP).

[0204] The encapsulation pattern (TFP) may be disposed between the second encapsulation layer (173) and the third encapsulation layer (175). The encapsulation pattern (TFP) may be disposed to overlap each of the light-emitting areas (LA1, LA2, LA3). The encapsulation pattern (TFP) may correspond to an area where light emitted from each of the light-emitting elements (ED1, ED2, ED3) is substantially output to the wavelength conversion layer (WCL). Therefore, the encapsulation pattern (TFP) may be disposed to cover at least each of the light-emitting areas (LA1, LA2, LA3). The encapsulation pattern (TFP) may be disposed to overlap at least a portion of the non-light-emitting area (NLA). The encapsulation pattern (TFP) may be disposed to not overlap with the bank (180) of the wavelength conversion layer (WCL).

[0205] As illustrated in FIG. 14, the encapsulation pattern (TFP) may have an area larger than each of the light-emitting regions (LA1, LA2, LA3). The encapsulation pattern (TFP) may be arranged to completely cover each of the light-emitting regions (LA1, LA2, LA3). The encapsulation patterns (TFP) may be arranged to be spaced apart from each other, and may be arranged to overlap the first region (MOL1) of the second encapsulation layer (173). For example, the encapsulation pattern (TFP) may completely overlap the first region (MOL1).

[0206] The encapsulation pattern (TFP) may include an inorganic material. For example, the encapsulation pattern (TFP) may include one or more of silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, silicon oxynitride, and lithium fluoride, but is not limited thereto.

[0207] The third encapsulating layer (175) can be placed on the encapsulating pattern (TFP) and the second encapsulating layer (173). The third encapsulating layer (175) can be in direct contact with the encapsulating pattern (TFP) and the second encapsulating layer (173) to cover them.

[0208] In this embodiment, a sealing pattern (TFP) is placed on the first region (MOL1) of the second sealing layer (173), and can be used in a manufacturing process to form a groove (GRO) of the second region (MOL2).

[0209] Referring to FIGS. 15 and 16, a first encapsulation layer (171) and a second encapsulation layer (173) of a thin film encapsulation layer (TFEL) are sequentially formed on an emission layer (EML). Next, an inorganic layer (CVL) is formed on the second encapsulation layer (173). The inorganic layer (CVL) may be formed using a chemical vapor deposition (CVD) method, but is not limited thereto.

[0210] Next, a photoresist pattern (PR) is formed on the inorganic layer (CVL). The photoresist pattern (PR) is formed to correspond to the area where the first area (MOL1) of the second sealing layer (173) is to be formed.

[0211] Next, the inorganic layer (CVL) and the second encapsulating layer (173) are etched using the photoresist pattern (PR) as a mask. The etching process can simultaneously etch the inorganic layer (CVL) and the second encapsulating layer (173) using dry etching. At this time, the inorganic layer (CVL) that is not masked by the photoresist pattern (PR) can be etched and removed. The second encapsulating layer (173) can be partially etched by controlling the etching process conditions to form a groove (GRO) in the second encapsulating layer (173).

[0212] Thereafter, the photoresist pattern (PR) is removed. The second encapsulation layer (173) may be formed with a second region (MOL2) in which a groove (GRO) is formed and a first region (MOL1) other than the second region (MOL2). In addition, an encapsulation pattern (TFP) may be formed in an region corresponding to the first region (MOL1) of the second encapsulation layer (173).

[0213] In this embodiment, it can be applied when the process for forming a groove (GRO) during the manufacturing process of a thin film encapsulation layer (TFEL) is performed in a different facility. If the substrate (SUB) is transferred to a different facility after forming the second encapsulation layer (173), foreign substances or moisture may penetrate into the second encapsulation layer (173). Therefore, the second encapsulation layer (173) may be covered and protected with an inorganic layer (CVL), and then the etching process for forming the groove (GRO) of the second encapsulation layer (173) may be performed in a different facility. Accordingly, it is possible to prevent foreign substances or moisture from penetrating into the second encapsulation layer (173) during the manufacturing process of the thin film encapsulation layer (TFEL) and to prevent the encapsulation characteristics from deteriorating.

[0214] Fig. 17 is a cross-sectional view schematically illustrating a display device according to another embodiment. Fig. 18 is a cross-sectional view schematically illustrating a portion of the first light-emitting area of ​​Fig. 17. Fig. 19 is a plan view illustrating the arrangement of light-emitting areas of a display device according to another embodiment.

[0215] Referring to FIGS. 17 to 19, the display device (10) according to the present embodiment is different from the embodiments of FIGS. 5 to 9 described above in that it further includes an etch stopper layer (ESL) disposed between the first encapsulation layer (171) and the second encapsulation layer (173) of the thin film encapsulation layer (TFEL) and the second encapsulation layer (173) includes an opening (OP).

[0216] A thin film encapsulation layer (TFEL) of a display device (10) according to one embodiment may include a first encapsulation layer (171), an etch stopper layer (ESL), a second encapsulation layer (173), and a third encapsulation layer (175).

[0217] An etch stopper layer (ESL) may be disposed between the first encapsulation layer (171) and the second encapsulation layer (173). The etch stopper layer (ESL) may be disposed directly on the first encapsulation layer (171). The etch stopper layer (ESL) may prevent damage to underlying layers during a process of etching an opening (OP) of the second encapsulation layer (173), which will be described later. The etch stopper layer (ESL) may be disposed on the entire display area (DPA).

[0218] The etch stopper layer (ESL) can have high light transmittance by being arranged across each light-emitting region (LA1, LA2, LA3). For example, the etch stopper layer (ESL) can have a transmittance of about 95% or more based on light having a wavelength of 550 nm.

[0219] The etch stopper layer (ESL) may include an inorganic material. For example, the etch stopper layer (ESL) may include one or more of silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, silicon oxynitride, and lithium fluoride. Furthermore, the etch stopper layer (ESL) may include a metal oxide. For example, the etch stopper layer (ESL) may include one or more of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium tin zinc oxide (ITZO), and indium oxide (In2O3). However, the present invention is not limited thereto.

[0220] A second encapsulation layer (173) may be disposed on the etch stopper layer (ESL). The second encapsulation layer (173) may be disposed to overlap each of the light-emitting areas (LA1, LA2, LA3). The second encapsulation layer (173) may correspond to an area where light emitted from each of the light-emitting elements (ED1, ED2, ED3) is substantially output to the wavelength conversion layer (WCL). Therefore, the second encapsulation layer (173) may be disposed to cover at least each of the light-emitting areas (LA1, LA2, LA3). The second encapsulation layer (173) may be disposed to overlap at least a portion of the non-light-emitting area (NLA). The second encapsulation layer (173) may be disposed to overlap at least a portion of the bank (180) of the wavelength conversion layer (WCL).

[0221] The opening (OP) may be arranged so as not to overlap with each of the light-emitting regions (LA1, LA2, LA3). The opening (OP) may be an area arranged between each of the light-emitting regions (LA1, LA2, LA3). The opening (OP) may be arranged so as to overlap with the non-light-emitting region (NLA). In some embodiments, the opening (OP) may completely overlap with the non-light-emitting region (NLA). The opening (OP) may be arranged so as to overlap with the bank (180) of the wavelength conversion layer (WCL).

[0222] The opening (OP) can expose the upper surface of the etch stopper layer (ESL) underneath. In the non-luminous region (NLA), the third encapsulating layer (175) can directly contact the upper surface of the etch stopper layer (ESL) through the opening (OP). The second encapsulating layer (173) is disposed between the first encapsulating layer (171) and the third encapsulating layer (175), and can be completely covered by them.

[0223] The bank (180) may be arranged in a shape that fills the opening (OP). Since the second sealing layer (173) is not arranged in the opening (OP), the bank (180) may be arranged closer to the pixel defining film (150). That is, the bank (180) may be arranged so as to be lowered further. Accordingly, light emitted between adjacent light-emitting areas (LA1, LA2, LA3) may be further blocked, thereby preventing color mixing.

[0224] Referring to Fig. 19, the second encapsulating layer (173) may be arranged in a pattern shape. For example, the second encapsulating layers (173) may be arranged spaced apart from each other and may be arranged in a dot shape. The second encapsulating layer (173) may have an area larger than each of the light-emitting areas (LA1, LA2, LA3). The second encapsulating layer (173) may be arranged to completely cover each of the light-emitting areas (LA1, LA2, LA3). The opening (OP) may not overlap with each of the light-emitting areas (LA1, LA2, LA3) and may be arranged in an area other than the second encapsulating layer (173). For example, the opening (OP) may be arranged in a shape that surrounds the second encapsulating layer (173).

[0225] The above-described opening (OP) can be formed through an ashing process after forming the second sealing layer (173). The ashing process can be performed using O2 or F as a reaction gas. For example, the ashing process can be performed using only O2 reaction gas, only F reaction gas, or after ashing with O2 reaction gas, a subsequent ashing process can be performed with F reaction gas. The ashing process using O2 reaction gas enables anisotropic etching, and the ashing process using F reaction gas can shorten the process time because the removal speed of the second sealing layer (173) is fast.

[0226] In this embodiment, by forming an etch stopper layer (ESL) on the thin film encapsulation layer (TFEL), it is possible to prevent damage to the lower layers during etching of the opening (OP) of the second encapsulation layer (173).

[0227] Fig. 20 is a cross-sectional view schematically illustrating a display device according to another embodiment. Fig. 21 is a cross-sectional view schematically illustrating a portion of the first light-emitting area of ​​Fig. 20.

[0228] Referring to FIGS. 20 and 21, the display device (10) according to the present embodiment differs from the embodiments of FIGS. 10 and 11 described above in that the thin film encapsulation layer (TFEL) includes an etch stopper layer (ESL) instead of the third encapsulation layer (175) and the fourth encapsulation layer (172) includes an opening (OP). Hereinafter, descriptions overlapping with the above-described embodiments will be omitted and the differences will be described.

[0229] A thin film encapsulation layer (TFEL) of a display device (10) according to one embodiment may include a first encapsulation layer (171), a second encapsulation layer (173), an etch stopper layer (ESL), a fourth encapsulation layer (172), and a fifth encapsulation layer (177).

[0230] The first encapsulating layer (171) is disposed on the light emitting element layer (EML), and the second encapsulating layer (173) can be disposed on the first encapsulating layer (171). The second encapsulating layer (173) can fill the lower step and have a flat upper portion.

[0231] An etch stopper layer (ESL) may be disposed on the second encapsulating layer (173). The etch stopper layer (ESL) may be formed flat due to the second encapsulating layer (173) having a flat upper surface. The etch stopper layer (ESL) may prevent the underlying layers from being damaged during the process of etching the opening (OP) of the fourth encapsulating layer (172). The etch stopper layer (ESL) may be disposed on the entire display area (DPA). Since the description of the etch stopper layer (ESL) has been described above, a detailed description thereof will be omitted.

[0232] A fourth sealing layer (172) may be placed on the etch stopper layer (ESL), and a fifth sealing layer (177) may be placed on the fourth sealing layer (172).

[0233] The fourth encapsulation layer (172) may be arranged to overlap each of the light-emitting areas (LA1, LA2, LA3). The fourth encapsulation layer (172) may correspond to an area where light emitted from each of the light-emitting elements (ED1, ED2, ED3) is substantially output to the wavelength conversion layer (WCL). Therefore, the fourth encapsulation layer (172) may be arranged to cover at least each of the light-emitting areas (LA1, LA2, LA3). The fourth encapsulation layer (172) may be arranged to overlap at least a portion of the non-light-emitting area (NLA). The fourth encapsulation layer (172) may be arranged to overlap at least a portion of the bank (180) of the wavelength conversion layer (WCL).

[0234] The opening (OP) may be arranged so as not to overlap with each of the light-emitting regions (LA1, LA2, LA3). The opening (OP) may be an area arranged between each of the light-emitting regions (LA1, LA2, LA3). The opening (OP) may be arranged so as to overlap with the non-light-emitting region (NLA). In some embodiments, the opening (OP) may completely overlap with the non-light-emitting region (NLA). The opening (OP) may be arranged so as to overlap with the bank (180) of the wavelength conversion layer (WCL).

[0235] The opening (OP) can expose the upper surface of the etch stopper layer (ESL) underneath. The fifth encapsulating layer (177) disposed on the fourth encapsulating layer (172) through the opening (OP) can directly contact the upper surface of the etch stopper layer (ESL). The fourth encapsulating layer (172) is disposed between the etch stopper layer (ESL) and the fifth encapsulating layer (177) and can be completely covered by them.

[0236] The above-described opening (OP) can be formed through an ashing process after forming the fourth sealing layer (172). The planar arrangement of the fourth sealing layer (172) and the opening (OP) is the same as the planar arrangement of the second sealing layer (173) and the opening (OP) of FIGS. 17 to 19 described above, and therefore, a description thereof is omitted.

[0237] In this embodiment, by forming an etch stopper layer (ESL) on the thin film encapsulation layer (TFEL), it is possible to prevent damage to the lower layers during etching of the opening (OP) of the fourth encapsulation layer (172).

[0238] Fig. 22 is a cross-sectional view schematically illustrating a display device according to another embodiment. Fig. 23 is a cross-sectional view schematically illustrating a portion of the first light-emitting area of ​​Fig. 22. Fig. 24 is a plan view illustrating the arrangement of light-emitting areas of a display device according to another embodiment.

[0239] Referring to FIGS. 22 to 24, the display device (10) according to the present embodiment is different from the embodiments of FIGS. 5 and 9 described above in that the thin film encapsulation layer (TFEL) includes a second encapsulation layer (173) with a plurality of openings (OP) and an organic layer (179) is arranged within the openings (OP). Hereinafter, descriptions overlapping with the above-described embodiments will be omitted and the differences will be described.

[0240] A thin film encapsulation layer (TFEL) of a display device (10) according to one embodiment may include a first encapsulation layer (171), a second encapsulation layer (173), a third encapsulation layer (175), and an organic layer (179).

[0241] The second encapsulation layer (173) may be disposed on the first encapsulation layer (171). The second encapsulation layer (173) may be disposed to overlap each of the light-emitting areas (LA1, LA2, LA3). The second encapsulation layer (173) may correspond to an area where light emitted from each of the light-emitting elements (ED1, ED2, ED3) is substantially output to the wavelength conversion layer (WCL). Therefore, the second encapsulation layer (173) may be disposed to cover at least each of the light-emitting areas (LA1, LA2, LA3). The second encapsulation layer (173) may be disposed to overlap at least a portion of the non-light-emitting area (NLA). The second encapsulation layer (173) may be disposed to overlap at least a portion of the bank (180) of the wavelength conversion layer (WCL).

[0242] The opening (OP) may be arranged so as not to overlap with each of the light-emitting regions (LA1, LA2, LA3). The opening (OP) may be an area arranged between each of the light-emitting regions (LA1, LA2, LA3). The opening (OP) may be arranged so as to overlap with the non-light-emitting region (NLA). In some embodiments, the opening (OP) may completely overlap with the non-light-emitting region (NLA). The opening (OP) may be arranged so as to overlap with the bank (180) of the wavelength conversion layer (WCL).

[0243] The opening (OP) can expose the upper surface of the first sealing layer (171) below. The third sealing layer (175) disposed on the second sealing layer (173) through the opening (OP) can directly contact the upper surface of the first sealing layer (171). The second sealing layer (173) is disposed between the first sealing layer (171) and the third sealing layer (175) and can be completely covered by them.

[0244] An organic layer (179) may be disposed in the opening (OP). The organic layer (179) may be disposed directly on the first encapsulating layer (171), or may be disposed between the first encapsulating layer (171) and the third encapsulating layer (175). The organic layer (179) may be completely covered by the first encapsulating layer (171) and the third encapsulating layer (175), thereby preventing moisture from penetrating into the organic layer (179).

[0245] The organic layer (179) may be arranged so as not to overlap with each of the light-emitting areas (LA1, LA2, LA3). The organic layer (179) may be arranged between each of the light-emitting areas (LA1, LA2, LA3). The organic layer (179) may be arranged so as to overlap with the non-light-emitting area (NLA). In some embodiments, the organic layer (179) may completely overlap with the non-light-emitting area (NLA). In addition, the organic layer (179) may be arranged so as to overlap with the bank (180) of the wavelength conversion layer (WCL).

[0246] The organic layer (179) may be formed with a third thickness (TT3). The second encapsulating layer (173) may be formed with a first thickness (TT1), and the third thickness (TT3) of the organic layer (179) may be formed to be smaller than the first thickness (TT1). For example, the third thickness (TT3) of the organic layer (179) may be formed to be 50 to 90% of the first thickness (TT1).

[0247] As illustrated in FIG. 24, the opening (OP) may be arranged to surround each of the light-emitting areas (LA1, LA2, LA3) without overlapping with each of the light-emitting areas (LA1, LA2, LA3). The organic layer (179) may have an area smaller than that of the opening (OP), may be arranged to surround each of the light-emitting areas (LA1, LA2, LA3), and may be arranged to surround each of the light-emitting areas (LA1, LA2, LA3). For example, the second encapsulating layer (173) may be arranged in a planar dot array similar to the shape of each of the light-emitting areas (LA1, LA2, LA3), and the organic layer (179) may be arranged in a shape to surround the second encapsulating layer (173).

[0248] The bank (180) may be arranged to fill the opening (OP) and cover the organic layer (179). Since the second encapsulation layer (173) is not arranged in the opening (OP), the bank (180) may be arranged closer to the pixel defining film (150). That is, the bank (180) may be arranged to be lowered further. Accordingly, light emitted between adjacent light-emitting areas (LA1, LA2, LA3) may be further blocked, thereby preventing color mixing.

[0249] Table 1 below shows the luminous efficiency and color matching ratio of red, green, blue, and white depending on whether the second encapsulation layer of the thin film encapsulation layer has grooves. The luminous efficiency and color matching ratio in Table 1 below are simulation results. The structure in which the second encapsulation layer has grooves is identical to the structure of Figs. 5 and 6, and the depth of the grooves was 1.5 μm.

[0250] Home Equipped with Luminous Efficiency (%) Color Matching Rate (%) RGBW DCIX10010010010098.15O96.799.393.298.499.01

[0251] Referring to Table 1 above, it was found that the color matching rate was improved from 98.15% to 99.01% when the second sealing layer had grooves compared to the structure without grooves in the second sealing layer. Therefore, it was confirmed that the display device according to the present embodiment can increase the color matching rate by having grooves in the second sealing layer and arranging the banks on the grooves.

[0252] Although embodiments of the present invention have been described with reference to the attached drawings, those skilled in the art will appreciate that the present invention can be implemented in other specific forms without altering the technical spirit or essential characteristics of the present invention. Therefore, the embodiments described above should be understood to be illustrative in all respects and not restrictive.

Claims

1. Substrate; A first electrode disposed on the substrate; A pixel defining film covering the edge of the first electrode and dividing light-emitting areas and non-light-emitting areas; A light-emitting layer disposed on the first electrode and the pixel defining film; A second electrode disposed on the above light-emitting layer; A thin film encapsulation layer disposed on the second electrode, comprising a first encapsulation layer, a second encapsulation layer disposed on the first encapsulation layer, and a third encapsulation layer disposed on the second encapsulation layer; and A wavelength conversion layer is disposed on the thin film encapsulation layer and includes a bank overlapping the non-emitting region, The second sealing layer includes a first region overlapping the light-emitting regions and a second region non-overlapping the light-emitting regions, A display device wherein the thickness of the first region is greater than the thickness of the second region.

2. In paragraph 1, A display device wherein the first region overlaps the non-luminous region, and the second region overlaps the non-luminous region.

3. In paragraph 1, A display device wherein the first region does not overlap with the bank and the second region overlaps with the bank.

4. In paragraph 1, A display device wherein the thickness of the second region is 50 to 90% of the thickness of the first region.

5. In paragraph 1, The second sealing layer includes a groove formed on the surface of the second sealing layer, and the groove is a display device arranged in the second area.

6. In paragraph 1, A display device in which the first region covers the light-emitting regions and is arranged spaced apart from each other on a plane, and the second region is arranged in an area remaining excluding the first region.

7. In paragraph 1, A display device in which the second region is arranged spaced apart from each other and is arranged between light-emitting regions that emit light of different colors.

8. In paragraph 1, Further comprising a bag pattern arranged between the second bag layer and the third bag layer, A display device in which the above-mentioned bag pattern overlaps with the first region and does not overlap with the second region.

9. In paragraph 8, A display device in which the above-mentioned bag pattern overlaps with the above-mentioned light-emitting areas and does not overlap with the above-mentioned bank.

10. In paragraph 1, A fourth encapsulating layer disposed between the first encapsulating layer and the second encapsulating layer; and Further comprising a fifth bag layer arranged between the fourth bag layer and the second bag layer, A display device wherein the first sealing layer, the third sealing layer, and the fifth sealing layer contain an inorganic material, and the second sealing layer and the fourth sealing layer contain an organic material.

11. In paragraph 1, A display device wherein the first sealing layer and the third sealing layer contain an inorganic material, and the second sealing layer contains an organic material.

12. In paragraph 1, A display device wherein the wavelength conversion layer is disposed between the banks and includes a light transmitting pattern, a first wavelength conversion pattern, and a second wavelength conversion pattern, each overlapping the light emitting areas.

13. In paragraph 12, A low refractive layer disposed on the wavelength conversion layer; and A display device further comprising a color filter layer disposed on the low-refractive-index layer, the color filter layer including a first color filter overlapping the light transmitting pattern, a second color filter overlapping the first wavelength conversion pattern, and a third color filter overlapping the second wavelength conversion pattern.

14. Substrate; A first electrode disposed on the substrate; A pixel defining film covering the edge of the first electrode and dividing light-emitting areas and non-light-emitting areas; A light-emitting layer disposed on the first electrode and the pixel defining film; A second electrode disposed on the above light-emitting layer; A thin film encapsulation layer disposed on the second electrode, comprising a first encapsulation layer, an etch stopper layer disposed on the first encapsulation layer, a second encapsulation layer disposed on the etch stopper layer, and a third encapsulation layer disposed on the second encapsulation layer; and A wavelength conversion layer is disposed on the thin film encapsulation layer and includes a bank overlapping the non-emitting region, A display device in which the third sealing layer is in contact with the etch stopper layer in the non-luminous region.

15. In paragraph 14, A display device wherein the second sealing layer includes an opening exposing the etch stopper layer, and the third sealing layer contacts the etch stopper layer through the opening.

16. In paragraph 15, The above opening is a display device overlapping the non-luminous region and the bank.

17. In paragraph 14, A display device wherein the second sealing layer is disposed between the etch stopper layer and the third sealing layer, and the display device is covered by the etch stopper layer and the third sealing layer.

18. In paragraph 14, Further comprising a fourth encapsulating layer disposed between the first encapsulating layer and the etch stopper layer, A display device wherein the second sealing layer and the fourth sealing layer contain organic matter.

19. Substrate; A first electrode disposed on the substrate; A pixel defining film covering the edge of the first electrode and dividing light-emitting areas and non-light-emitting areas; A light-emitting layer disposed on the first electrode and the pixel defining film; A second electrode disposed on the above light-emitting layer; A thin film encapsulation layer disposed on the second electrode, comprising a first encapsulation layer, a second encapsulation layer and an organic layer disposed on the first encapsulation layer and spaced apart from each other, and a third encapsulation layer disposed on the second encapsulation layer and the organic layer; and A wavelength conversion layer is disposed on the thin film encapsulation layer and includes a bank overlapping the non-emitting region, A display device in which the third sealing layer is in contact with the first sealing layer in the non-luminous region.

20. In paragraph 19, The second sealing layer overlaps the non-luminous region and the bank and includes an opening exposing the first sealing layer, A display device in which the organic layer is disposed within the opening and in contact with the first sealing layer.

21. In paragraph 20, A display device in which the third sealing layer covers the second sealing layer and the organic layer and is in contact with the first sealing layer through the opening.

22. In paragraph 20, The above bank is a display device that fills the opening on the third sealing layer.

23. In paragraph 19, A display device wherein the thickness of the organic layer is smaller than the thickness of the second sealing layer.

24. In paragraph 19, A display device wherein the first sealing layer and the third sealing layer contain an inorganic material, and the second sealing layer contains an organic material.

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