Micro light-emitting diode substrate and manufacturing method therefor, and display apparatus

WO2025156191A9PCT designated stage Publication Date: 2026-01-22BOE TECHNOLOGY GROUP CO LTD +1
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Patent Information

Application Number
PCT/CN2024/074007
Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
Filing Date
2024-01-25
Publication Date
2026-01-22

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Abstract

A light-emitting diode substrate and a manufacturing method therefor, and a display apparatus. The light-emitting diode substrate comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer. The first semiconductor layer is of a first semiconductor type; the second semiconductor layer is of a second semiconductor type and is located on the side of the light-emitting layer that is away from the first semiconductor layer; and the first semiconductor layer comprises a light-emitting portion and a plurality of ion implantation portions, wherein the light-emitting portion is arranged between two adjacent ion implantation portions, and the lattice of the ion implantation portion is damaged. Therefore, the light-emitting diode substrate can improve the quantum efficiency and further improve a lighting effect.
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