System and method for online measurement of junction temperature of semiconductor device, and controller

Abstract

A system and method for online measurement of junction temperature of a semiconductor device, and a controller. The measurement system comprises a controller, an online measurement circuit (200), and a measurement module for extracting saturated drain electrode current information of a device under test (100). One end of the online measurement circuit (200) is connected to a drain electrode (103) of said device (100), and the other end of the online measurement circuit (200) is connected to a source electrode (104) of said device (100). When said device (100) enters a saturation region for operation, an energy storage element (204) in the online measurement circuit (200) automatically injects current into the drain electrode (103) of said device (100), so that a drain electrode current of said device (100) rises. The controller is connected to the measurement module. On the basis of the saturated drain electrode current information of said device (100) extracted by the measurement module, the controller determines the junction temperature of said device (100). By using the described system and method and the controller, the junction temperature of a semiconductor device can be detected online, and the system, method, and controller have the characteristics of low costs, high precision, high sensitivity, and high response speed.

Description

A semiconductor device junction temperature online detection system, method and controller Technical Field

[0001] The present invention belongs to the field of online technology, and relates to an online junction temperature detection system, method and controller, and in particular to an online junction temperature detection system, method and controller for semiconductor devices. Background Art

[0002] Semiconductor devices, often used as power electronic components for power conversion and control, play a core role in the application of power electronics technology. Therefore, their reliability can significantly impact the operational reliability of the entire power system. In recent years, with increasingly stringent application requirements for semiconductor devices in key sectors such as oil exploration, new energy vehicles, and aerospace, traditional silicon-based power devices are no longer able to meet these requirements due to their material properties approaching their limits. A new generation of wide-bandgap (silicon carbide, gallium nitride, etc.) and ultra-wide-bandgap (diamond, gallium oxide, etc.) power semiconductors are gradually replacing traditional silicon-based power devices. However, due to differences in material properties, wide-bandgap and ultra-wide-bandgap power semiconductors require more advanced reliability testing and assessment methods than traditional silicon-based power devices. For example, silicon carbide MOSFETs theoretically have a wide operating temperature range of 600°C, but their smaller device area results in greater heat flux, leading to problems such as excessively high or fluctuating junction temperatures, posing more stringent thermal management requirements. Current research indicates that over 50% of semiconductor device failures are caused by overheating due to excessively high or fluctuating junction temperatures. Excessively high or fluctuating junction temperatures can increase the device's on-state voltage and leakage current, increasing losses during switching transients and the on-state, leading to increased thermomechanical stress, which can easily lead to semiconductor device failure and seriously threaten its reliability. Therefore, a low-cost, high-precision, high-sensitivity, and high-response online junction temperature detection method is of great significance for reliability assessment, status measurement, and health management of semiconductor devices during operation.

[0003] There are four main traditional methods for measuring junction temperature in semiconductor devices: physical contact measurement, optical non-contact measurement, thermal impedance model prediction, and thermosensitive electrical parameter method. The physical contact measurement method involves directly placing a thermistor or thermocouple inside the device to obtain the measured junction temperature. While this method is simple in principle, the measured value differs significantly from the true value, is highly invasive, and has a slow response speed, making it unsuitable for online measurement. While optical non-contact measurement offers high accuracy, it requires optical processing and is subject to significant limitations. The thermal impedance model prediction method can infer the device junction temperature using real-time losses and a transient thermal impedance network model. However, the real-time calculation of losses and the establishment of a thermal impedance model are difficult, and the parameters of the thermal impedance model can change significantly with device aging, significantly affecting the accuracy of the results. Compared to the first three methods, the thermosensitive electrical parameter method utilizes the relationship between the device's electrical parameters and temperature to measure the device's junction temperature. This method offers high measurement accuracy and fast response speed, and does not require changes to the original device packaging structure. It has been widely used for online junction temperature measurement of traditional silicon-based power devices. However, because semiconductor materials can maintain stable electrical properties in high-temperature environments and have strong thermal stability, semiconductor devices have low thermal sensitivity. In addition, wide-bandgap and ultra-wide-bandgap semiconductor devices have wider bandgap widths, higher switching frequencies, greater power densities, the ability to operate over a wider temperature range, and faster operating speeds. This results in traditional thermally sensitive electrical parameter methods having lower temperature sensitivity and introducing greater measurement errors. Therefore, high-precision, high-bandwidth circuits are needed to measure traditional thermally sensitive electrical parameters, but this significantly increases the difficulty and cost of online junction temperature detection for semiconductor devices. Technical issues

[0004] The purpose of the present invention is to overcome the shortcomings of the above-mentioned prior art and provide a semiconductor device junction temperature online detection system, method and controller. The system, method and controller can detect the junction temperature of the semiconductor device online and have the characteristics of low cost, high precision, high sensitivity and high response speed. Technical Solutions

[0005] To achieve the above-mentioned object, the present invention discloses an online detection system for junction temperature of a semiconductor device, comprising a controller, an online measurement circuit, and a detection module for extracting saturated drain current information of the device under test, wherein one end of the online measurement circuit is connected to the drain of the device under test, and the other end of the online measurement circuit is connected to the source of the device under test;

[0006] When the device under test enters the saturation region, the energy storage element in the online measurement circuit automatically injects current into the drain of the device under test, causing the drain current of the device under test to increase.

[0007] The controller is connected to the detection module, and determines the junction temperature of the device under test according to the saturation drain current information of the device under test extracted by the detection module.

[0008] Furthermore, it also includes a driving voltage control circuit, wherein one end of the driving voltage control circuit is connected to the gate of the device under test, the other end of the driving voltage control circuit is connected to the Kelvin source of the device under test, and the control end of the driving voltage control circuit is connected to the controller. The controller controls the driving voltage control circuit to output a driving voltage signal to the device under test, so that the device under test enters the saturation zone to operate.

[0009] Furthermore, the online measurement circuit includes an energy storage element, a DC voltage source, a controllable switching device and a device with a unidirectional blocking function, wherein one end of the device with a unidirectional blocking function is connected to the drain of the device under test, the other end of the device with a unidirectional blocking function is connected to one end of the energy storage element and one end of the controllable switching device, the other end of the controllable switching device is connected to the positive electrode of the DC voltage source, and the negative electrode of the DC voltage source, the other end of the energy storage element and the source of the device under test are connected.

[0010] Furthermore, the online measurement circuit includes an energy storage element, a pulsed DC source and a device with a unidirectional blocking function, wherein one end of the device with a unidirectional blocking function is connected to the drain of the device under test, the other end of the device with a unidirectional blocking function is connected to one end of the energy storage element and the positive pole of the pulsed DC source, and the negative pole of the pulsed DC source, the other end of the energy storage element and the source of the device under test are connected.

[0011] Furthermore, the online measurement circuit includes an energy storage element and a device with a unidirectional blocking function, wherein one end of the device with a unidirectional blocking function is connected to the drain of the device under test, the other end of the device with a unidirectional blocking function is connected to one end of the energy storage element, and the other end of the energy storage element is connected to the source of the device under test.

[0012] Furthermore, the energy storage element is a capacitor.

[0013] In addition, the present invention discloses a method for online detection of junction temperature of a semiconductor device, comprising:

[0014] The device under test is made to work in the saturation region. After the device under test enters the saturation region, the energy storage element in the online measurement circuit automatically injects current into the drain of the device under test, causing the drain current of the device under test to increase.

[0015] Extracting saturation drain current information of the device under test through a detection module;

[0016] The junction temperature of the device under test is determined based on the saturation drain current information of the device under test.

[0017] Furthermore, the semiconductor device junction temperature online detection system also includes a driving voltage control circuit, wherein one end of the driving voltage control circuit is connected to the gate of the device under test, the other end of the driving voltage control circuit is connected to the Kelvin source of the device under test, and the control end of the driving voltage control circuit is connected to the controller.

[0018] Further, specifically including:

[0019] 1) During the t0-t1 phase, the gate-source voltage V GS is less than the threshold voltage, the device under test is in the off state, and the drain current I flowing into the device under test is D is zero;

[0020] 2) During the t1-t2 phase, the drive voltage control circuit outputs the first drive voltage signal to the device under test, so that the gate-source voltage V GS When the voltage is higher than the threshold voltage, the device under test is in the normal on state, and the drain current I D rise;

[0021] 3) During the t2-t3 phase, the gate-source voltage V GS When the voltage is less than the threshold voltage, the device under test changes from the on state to the off state, and the drain current I flowing into the device under test D is zero;

[0022] 4) During the t3-t4 phase, the gate-source voltage V GS If the voltage is lower than the threshold voltage, the device under test continues to maintain the off state, and the drain current I D is zero, then the energy storage element charging control signal V M , charging the energy storage element in the online measurement circuit;

[0023] 5) During the t4-t5 phase, the energy storage element in the online measurement circuit has begun to charge, and the energy storage element charging control signal V is turned off. M , the gate-source voltage of the device under test V GS If the voltage is lower than the threshold voltage, the device under test continues to maintain the off state, and the drain current I D is zero;

[0024] 6) During the t5-t6 phase, the driving voltage control circuit outputs a second driving voltage signal, causing the voltage across the drain and source of the device under test to gradually decrease from the DC bus voltage to the voltage across the energy storage element in the online measurement circuit. The drain current flowing into the device under test increases, and the energy storage element charging control signal V M closure;

[0025] 7) During the t6-t7 phase, the drive voltage control circuit outputs a second drive voltage signal to the device under test. Since the voltage across the energy storage element is higher than the voltage across the gate and Kelvin source of the device under test, the device under test enters the saturation region. The energy storage element in the online measurement circuit begins to spontaneously inject current into the drain of the device under test, causing the drain current of the device under test to increase. The detection module extracts the saturated drain current information of the device under test, and the junction temperature of the device under test is determined based on the saturated drain current information of the device under test.

[0026] 8) During the t7-t8 phase, the gate-source voltage V GS When the voltage is less than the threshold voltage, the device under test enters the off state and the drain current I D is zero, the energy storage element charging control signal V M closure.

[0027] In addition, the present invention discloses a controller, comprising:

[0028] A control module is used to make the device under test operate in a saturation region. After the device under test operates in the saturation region, an energy storage element in an online measurement circuit automatically injects current into the drain of the device under test, causing the drain current of the device under test to increase.

[0029] An extraction module, used for extracting saturation drain current information of the device under test through the detection module;

[0030] The determination module is used to determine the junction temperature of the device under test according to the saturation drain current information of the device under test. Beneficial effects

[0031] During specific operation, the semiconductor device junction temperature online detection system, method, and controller described in the present invention have a very high temperature sensitivity due to the synergistic effect of the threshold voltage, on-resistance, and voltages across the drain and source electrodes on the saturated drain current information of the device under test in the saturation region. Therefore, the present invention extracts the saturated drain current information of the device under test to perform high-precision, high-sensitivity, high-response speed, and low-cost online detection of the junction temperature of the device under test. The operation is convenient, simple, and highly practical. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] FIG1 is a schematic diagram showing factors influencing the temperature sensitivity of saturated drain current according to an embodiment of the present invention;

[0033] FIG2 is a schematic structural diagram of a semiconductor device junction temperature online detection circuit in Example 1;

[0034] FIG3 is a working timing diagram of the online detection method for junction temperature of a semiconductor device in Example 6;

[0035] FIG4 is a comparison diagram of current changes during online detection of junction temperature of a semiconductor device in Example 6;

[0036] FIG5 is a schematic structural diagram of the online measurement circuit 200 in the second embodiment;

[0037] FIG6 is a schematic structural diagram of the online measurement circuit 200 in the third embodiment;

[0038] FIG7 is a schematic structural diagram of the online measurement circuit 200 in the fourth embodiment. Modes for Carrying Out the Invention

[0039] In order to enable those skilled in the art to better understand the solutions of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only embodiments of a part of the present invention, not all embodiments, and are not intended to limit the scope of the present invention. In addition, in the following description, descriptions of well-known structures and technologies are omitted to avoid unnecessary confusion of the concepts disclosed in the present invention. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work should fall within the scope of protection of the present invention.

[0040] The accompanying drawings illustrate schematic diagrams of the structures of the disclosed embodiments of the present invention. These figures are not drawn to scale; for the purpose of clarity, some details are exaggerated and some details may be omitted. The shapes of the various regions and layers shown in the figures, as well as their relative sizes and positional relationships, are merely exemplary and may deviate in practice due to manufacturing tolerances or technical limitations. Those skilled in the art may design regions / layers with different shapes, sizes, and relative positions as needed.

[0041] Example 1

[0042] 2 , the semiconductor device junction temperature online detection system of the present invention includes a controller, an online measurement circuit 200, and a detection module for extracting saturated drain current information of the device under test 100, wherein one end of the online measurement circuit 200 is connected to the drain 103 of the device under test 100, and the other end of the online measurement circuit 200 is connected to the source 104 of the device under test 100, and the controller is connected to the detection module.

[0043] During operation, when the device under test 100 enters the saturation region, the energy storage element 204 in the online measurement circuit 200 automatically injects current into the drain 103 of the device under test 100, causing the drain current of the device under test 100 to increase; the controller determines the junction temperature of the device under test 100 based on the saturation drain current information of the device under test 100 extracted by the detection module.

[0044] Furthermore, this embodiment also includes a driving voltage control circuit 300, wherein one end of the driving voltage control circuit 300 is connected to the gate 101 of the device under test 100, and the other end of the driving voltage control circuit 300 is connected to the Kelvin source 102 of the device under test 100, and the control end of the driving voltage control circuit 300 is connected to the controller, and the controller controls the driving voltage control circuit 300 to output a driving voltage signal to the device under test 100, so that the device under test 100 enters the saturation region to operate.

[0045] During operation, the driving voltage control circuit 300 outputs a driving voltage signal to the device under test 100. On the one hand, it can control the on or off of the device under test 100. On the other hand, it can adjust the maximum saturation current value flowing into the device under test 100 by regulating the voltage across the gate 101 and the Kelvin source 102 in the device under test 100, thereby controlling the additional error introduced by the present invention. Since the saturation drain current information of the device under test 100 in the saturation region has a very high temperature sensitivity under the synergistic effect of the threshold voltage, on-resistance and the voltage across the drain 103 and source 104, the saturation drain current information of the device under test 100 can be extracted to perform high-precision, high-sensitivity, high-response speed and low-cost online detection of the junction temperature of the device under test 100.

[0046] In this embodiment, the device under test 100 includes but is not limited to semiconductor devices such as silicon IGBT devices, silicon carbide MOSFETs, and gallium nitride devices.

[0047] In this embodiment, the energy storage element 204 is a capacitor.

[0048] In this embodiment, the detection module uses a direct measurement method, an indirect measurement method, or an alternative measurement method to extract the saturated drain current information of the device under test 100. That is, the saturated drain current information can be a saturated drain current value or a physical quantity related to the saturated drain current value.

[0049] Example 2

[0050] 5 , based on Example 1, the online measurement circuit 200 includes an energy storage element 204, a DC voltage source 203, a controllable switching device 202, and a device 201 with a unidirectional blocking function, wherein one end of the device 201 with a unidirectional blocking function is connected to the drain 103 of the device under test 100, the other end of the device 201 with a unidirectional blocking function is connected to one end of the energy storage element 204 and one end of the controllable switching device 202, the other end of the controllable switching device 202 is connected to the positive electrode of the DC voltage source 203, and the negative electrode of the DC voltage source 203, the other end of the energy storage element 204, and the source 104 of the device under test 100 are connected.

[0051] It should be noted that the function of the unidirectional blocking device 201 is to prevent the high voltage across the drain 103 and source 104 of the device under test 100 in the power circuit from being applied to components such as the energy storage element 204 in the online measurement circuit 200, potentially damaging the components and causing safety issues. The DC voltage source 203 provides electrical energy to the energy storage element 204, and the controllable switching device 202 controls the DC voltage source 203 to charge the energy storage element 204.

[0052] Example 3

[0053] Referring to Figure 6, based on Example 1, in this embodiment, the online measurement circuit 200 includes an energy storage element 204, a pulsed DC source 205 and a device 201 with a unidirectional blocking function, wherein one end of the device 201 with a unidirectional blocking function is connected to the drain 103 of the device under test 100, the other end of the device 201 with a unidirectional blocking function is connected to one end of the energy storage element 204 and the positive electrode of the pulsed DC source 205, and the negative electrode of the pulsed DC source 205, the other end of the energy storage element 204 and the source 104 of the device under test 100 are connected.

[0054] It should be noted that the function of the unidirectional blocking device 201 is to prevent the high voltage across the drain 103 and source 104 of the device under test 100 in the power circuit from being applied to the energy storage element 204 in the online measurement circuit 200, thereby damaging the element and causing safety issues. The pulsed DC source 205 provides power to the energy storage element 204.

[0055] Example 4

[0056] 7 , the online measurement circuit 200 includes an energy storage element 204 and a device 201 with a unidirectional blocking function, wherein one end of the device 201 with a unidirectional blocking function is connected to the drain 103 of the device under test 100, and the other end of the device 201 with a unidirectional blocking function is connected to one end of the energy storage element 204, and the other end of the energy storage element 204 is connected to the source 104 of the device under test 100.

[0057] It should be noted that the device 201 with unidirectional blocking function can prevent the high voltage across the drain 103 and source 104 of the device under test 100 in the power circuit from being applied to the energy storage element 204, causing damage to the element and triggering safety issues.

[0058] Example 5

[0059] Accordingly, the present invention discloses an online detection method for the junction temperature of a semiconductor device, based on an online detection system for the junction temperature of a semiconductor device. The online detection system for the junction temperature of a semiconductor device includes a controller, an online measurement circuit 200, and a detection module for extracting saturated drain current information of the device under test 100, wherein one end of the online measurement circuit 200 is connected to the drain 103 of the device under test 100, and the other end of the online measurement circuit 200 is connected to the source 104 of the device under test 100, and the controller is connected to the detection module.

[0060] The semiconductor device junction temperature online detection method comprises:

[0061] The controller causes the device under test 100 to operate in the saturation region. After the device under test 100 enters the saturation region, the energy storage element 204 in the online measurement circuit 200 automatically injects current into the drain 103 of the device under test 100, causing the drain current of the device under test 100 to increase.

[0062] The controller extracts the saturation drain current information of the device under test 100 through the detection module;

[0063] The controller determines the junction temperature of the device under test 100 according to the saturated drain current information of the device under test 100 .

[0064] Example 6

[0065] In order to make the device under test 100 enter the saturation region to operate, the semiconductor device junction temperature online detection system also includes a driving voltage control circuit 300, wherein one end of the driving voltage control circuit 300 is connected to the gate 101 of the device under test 100, the other end of the driving voltage control circuit 300 is connected to the Kelvin source 102 of the device under test 100, and the control end of the driving voltage control circuit 300 is connected to the controller.

[0066] Correspondingly, referring to FIG1 and FIG3 , this embodiment further discloses a method for online detection of junction temperature of a semiconductor device, comprising the following steps:

[0067] 1) During the t0-t1 phase, the gate-source voltage V GS is less than the threshold voltage of the device under test 100, the device under test 100 is in the off state, and the drain current I D Is zero, the energy storage element charging control signal V is not turned on at this time M ;

[0068] 2) During the t1-t2 phase, the driving voltage control circuit 300 outputs a first driving voltage signal and sends the first driving voltage signal to the device under test 100, so that the gate-source voltage V GSWhen the voltage is higher than the threshold voltage, the device under test 100 is in a normal on-state. Taking an inductive load as an example, the drain current I flowing into the device under test 100 is D It shows a linear rise, and the energy storage element charging control signal V is still not turned on at this time M ;

[0069] 3) During the t2-t3 phase, the gate-source voltage V GS is less than the threshold voltage, the device under test 100 changes from the on state to the off state, and the drain current I flowing into the device under test 100 D is zero, and the energy storage element charging control signal V is still not turned on. M ;

[0070] 4) During the t3-t4 phase, the gate-source voltage V GS is less than the threshold voltage, the device under test 100 continues to maintain the off state, and the drain current I D is zero, then the energy storage element charging control signal V M , charging the energy storage element 204 in the online measurement circuit 200 , in preparation for the subsequent automatic injection of current from the energy storage element 204 into the drain 103 of the device under test 100 ;

[0071] 5) During the t4-t5 phase, the energy storage element 204 in the online measurement circuit 200 has started charging, and the energy storage element charging control signal V is turned off. M , the gate-source voltage V GS is less than the threshold voltage, the device under test 100 continues to maintain the off state, and the drain current I D is zero;

[0072] 6) During the t5-t6 phase, the driving voltage control circuit 300 outputs a second driving voltage signal, causing the voltage across the drain 103 and source 104 of the device under test 100 to gradually decrease from the DC bus voltage to the voltage across the energy storage element 204 in the online measurement circuit 200. The drain current flowing into the device under test 100 increases, and the energy storage element charging control signal V M closure;

[0073] 7) During the period t6-t7, the drive voltage control circuit 300 outputs a second drive voltage signal to the device under test 100. Since the voltage across the energy storage element 204 is higher than the voltage across the gate 101 and the Kelvin source 102 of the device under test 100, the device under test 100 enters the saturation region. The energy storage element 204 in the online measurement circuit 200 begins to spontaneously inject current into the drain 103 of the device under test 100, causing the drain current of the device under test 100 to increase. The saturated drain current information of the device under test 100 is extracted, and the junction temperature of the device under test 100 is determined based on the saturated drain current information of the device under test 100.

[0074] 8) During the t7-t8 phase, the gate-source voltage V GS is less than the threshold voltage, the device under test 100 enters the off state, and the drain current I D is zero, the energy storage element charging control signal V M Close, and a cycle ends.

[0075] Referring to Figure 4 , the present invention compares the load current B and the saturated drain current A after injection. It can be seen that the additional current injected into the device under test 100 does not affect the load current B under normal operating conditions. Furthermore, it can be seen that the saturated drain current A flowing into the device under test 100 is highly temperature sensitive, verifying the correctness and feasibility of the present invention.

[0076] Example 7

[0077] Based on the fifth embodiment, the present invention discloses a controller, including:

[0078] A control module is configured to cause the device under test 100 to operate in a saturation region. After the device under test 100 enters the saturation region, the energy storage element 204 in the online measurement circuit 200 automatically injects current into the drain of the device under test 100, causing the drain current of the device under test 100 to increase.

[0079] An extraction module, configured to extract saturation drain current information of the device under test 100 through the detection module;

[0080] The determination module is configured to determine the junction temperature of the device under test 100 according to the saturated drain current information of the device under test 100 .

[0081] It should be noted that the present invention has the following characteristics:

[0082] Higher temperature sensitivity

[0083] a. When the device under test 100 enters the saturation region, the energy storage element 204 in the online measurement circuit 200 automatically injects current into the drain 103 of the device under test 100. Due to the synergistic feedback effect of the threshold voltage, on-resistance, and the temperature sensitivity of the voltage across the drain 103 and source 104 to the saturation drain current information, the relationship between the drain current of the device under test 100 and temperature exhibits a segmented and highly linear characteristic.

[0084] b. Compared to thermosensitive electrical parameter methods that utilize other temperature-sensitive parameters, the present invention offers advantages such as low cost, high precision, high sensitivity, and high response speed. Existing thermosensitive electrical parameter methods that utilize other temperature-sensitive parameters have low temperature sensitivity, while the present invention's temperature sensitivity can reach hundreds of billions or even billions of times greater than other methods.

[0085] Low interference with normal operating conditions

[0086] a. The additional current injected into the device under test 100 does not affect the load current under normal operating conditions. Although the load current and the additional injected current converge in the device under test 100, they do not affect each other.

[0087] b. The power loss introduced by the additional current injection into the DUT 100 is essentially consistent with the rated turn-on transient loss specified in the DUT 100 datasheet. In practical applications, due to the low temperature sampling frequency and the consistent loss magnitude, the power loss caused by the additional current injection can be considered low. Furthermore, since the additional current injection results in a larger drain current in the DUT 100, the DUT 100 has a faster turn-off speed, further reducing the total loss of the DUT 100 during the additional current injection phase.

[0088] Wide applicability

[0089] The energy storage element 204 in the online measurement circuit 200 automatically injects current into the drain 103 of the device under test 100. The start time of injection is determined by the relationship between the voltage across the drain 103 and source 104 of the device under test 100 and the voltage across the energy storage element 204. The injection process is spontaneous. The new generation of wide-bandgap and ultra-wide-bandgap semiconductor devices has extremely fast switching speeds. If the switching transients of these semiconductor devices need to be controlled during online detection of their junction temperature, higher precision and more complex control circuits are required, which will further increase costs. However, the implementation of the present invention does not require control of the switching transients of the semiconductor devices, which has the advantages of simple control and low cost.

[0090] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and not to limit it. Although the present invention has been described in detail with reference to the above embodiments, ordinary technicians in the field should understand that the specific implementation methods of the present invention can still be modified or replaced by equivalents. Any modification or equivalent replacement that does not depart from the spirit and scope of the present invention should be covered by the scope of protection of the claims of the present invention.

Claims

1. A semiconductor device junction temperature online detection system, characterized in that: The invention comprises a controller, an online measurement circuit (200), and a detection module for extracting saturated drain current information of a device under test (100), wherein one end of the online measurement circuit (200) is connected to the drain (103) of the device under test (100), and the other end of the online measurement circuit (200) is connected to the source (104) of the device under test (100); When the device under test (100) enters the saturation region, the energy storage element (204) in the online measurement circuit (200) automatically injects current into the drain (103) of the device under test (100), causing the drain current of the device under test (100) to increase; The controller is connected to the detection module, and determines the junction temperature of the device under test (100) based on the saturated drain current information of the device under test (100) extracted by the detection module.

2. The semiconductor device junction temperature online detection system according to claim 1, characterized in that: The device further comprises a driving voltage control circuit (300), wherein one end of the driving voltage control circuit (300) is connected to the gate (101) of the device under test (100), the other end of the driving voltage control circuit (300) is connected to the Kelvin source (102) of the device under test (100), and the control end of the driving voltage control circuit (300) is connected to the controller, and the controller controls the driving voltage control circuit (300) to output a driving voltage signal to the device under test (100), so that the device under test (100) enters the saturation region to operate.

3. The semiconductor device junction temperature online detection system according to claim 1, characterized in that: The online measurement circuit (200) comprises an energy storage element (204), a DC voltage source (203), a controllable switch device (202), and a device (201) with a unidirectional blocking function, wherein one end of the device (201) with a unidirectional blocking function is connected to the drain (103) of the device under test (100), the other end of the device (201) with a unidirectional blocking function is connected to one end of the energy storage element (204) and one end of the controllable switch device (202), the other end of the controllable switch device (202) is connected to the positive electrode of the DC voltage source (203), and the negative electrode of the DC voltage source (203), the other end of the energy storage element (204), and the source (104) of the device under test (100) are connected.

4. The semiconductor device junction temperature online detection system according to claim 1, characterized in that: The online measurement circuit (200) comprises an energy storage element (204), a pulsed DC source (205), and a device (201) with a unidirectional blocking function, wherein one end of the device (201) with a unidirectional blocking function is connected to the drain (103) of the device under test (100), the other end of the device (201) with a unidirectional blocking function is connected to one end of the energy storage element (204) and the positive electrode of the pulsed DC source (205), and the negative electrode of the pulsed DC source (205), the other end of the energy storage element (204), and the source (104) of the device under test (100) are connected.

5. The semiconductor device junction temperature online detection system according to claim 1, wherein: The online measurement circuit (200) comprises an energy storage element (204) and a device (201) with a unidirectional blocking function, wherein one end of the device (201) with a unidirectional blocking function is connected to the drain (103) of the device under test (100), the other end of the device (201) with a unidirectional blocking function is connected to one end of the energy storage element (204), and the other end of the energy storage element (204) is connected to the source (104) of the device under test (100).

6. The semiconductor device junction temperature online detection system according to any one of claims 3 to 5, characterized in that: The energy storage element (204) is a capacitor.

7. A method for online detection of junction temperature of a semiconductor device, characterized in that: The semiconductor device junction temperature online detection system according to claim 1 comprises: The device under test (100) is caused to operate in a saturation region. After the device under test (100) enters the saturation region, the energy storage element (204) in the online measurement circuit (200) automatically injects current into the drain (103) of the device under test (100), causing the drain current of the device under test (100) to increase. Extracting saturated drain current information of the device under test (100) through a detection module; The junction temperature of the device under test (100) is determined based on the saturated drain current information of the device under test (100).

8. The method for online detection of junction temperature of a semiconductor device according to claim 7, wherein: The semiconductor device junction temperature online detection system further comprises a driving voltage control circuit (300), wherein one end of the driving voltage control circuit (300) is connected to the gate (101) of the device under test (100), the other end of the driving voltage control circuit (300) is connected to the Kelvin source (102) of the device under test (100), and the control end of the driving voltage control circuit (300) is connected to the controller.

9. The method for online detection of junction temperature of a semiconductor device according to claim 8, wherein: Specifically include: 1) During the t0-t1 phase, the gate-source voltage V GS is less than the threshold voltage, the device under test (100) is in the off state, and the drain current I flowing into the device under test (100) D is zero; 2) During the t1-t2 phase, the driving voltage control circuit (300) outputs a first driving voltage signal to the device under test (100), so that the gate-source voltage V GS When the voltage is higher than the threshold voltage, the device under test (100) is in a normal on-state, and the drain current I flowing into the device under test (100) is D rise; 3) During the t2-t3 phase, the gate-source voltage V GS is less than the threshold voltage, the device under test (100) changes from an on state to an off state, and the drain current I flowing into the device under test (100) D is zero; 4) During the t3-t4 phase, the gate-source voltage V GS is less than the threshold voltage, the device under test (100) continues to maintain the off state, and the drain current I flowing into the device under test (100) D is zero, then the energy storage element charging control signal V M , charging the energy storage element (204) in the online measurement circuit (200); 5) During the t4-t5 phase, the energy storage element (204) in the online measurement circuit (200) has started charging, and the energy storage element charging control signal V is turned off. M , the gate-source voltage V of the device under test (100) GS is less than the threshold voltage, the device under test (100) continues to maintain the off state, and the drain current I flowing into the device under test (100) D is zero; 6) During the t5-t6 phase, the driving voltage control circuit (300) outputs a second driving voltage signal, causing the voltage across the drain (103) and the source (104) of the device under test (100) to gradually decrease from the DC bus voltage to the voltage across the energy storage element (204) in the online measurement circuit (200), and the drain current flowing into the device under test (100) increases, and the energy storage element charging control signal V M closure; 7) During the t6-t7 phase, the driving voltage control circuit (300) outputs a second driving voltage signal to the device under test (100). Since the voltage across the energy storage element (204) is higher than the voltage across the gate (101) and the Kelvin source (102) in the device under test (100), the device under test (100) enters the saturation region and operates. The energy storage element (204) in the online measurement circuit (200) begins to spontaneously inject current into the drain (103) of the device under test (100), causing the drain current of the device under test (100) to increase. The saturated drain current information of the device under test (100) is extracted by the detection module, and the junction temperature of the device under test (100) is determined based on the saturated drain current information of the device under test (100). 8) During the t7-t8 phase, the gate-source voltage V GS is less than the threshold voltage, the device under test (100) enters the off state, and the drain current I flowing into the device under test (100) D is zero, the energy storage element charging control signal V M closure.

10. A controller, characterized in that: include: A control module is used to make the device under test (100) enter the saturation region to operate, and after the device under test (100) enters the saturation region to operate, the energy storage element (204) in the online measurement circuit (200) automatically injects current into the drain (103) of the device under test (100), so that the drain current of the device under test (100) increases; An extraction module, used for extracting saturated drain current information of the device under test (100) through the detection module; A determination module is used to determine the junction temperature of the device under test (100) based on the saturated drain current information of the device under test (100).

Images