Magnetron sputter cathode, method of operating a magnetron sputter cathode, sputter deposition source, deposition apparatus, and method of operating a sputter deposition source

The magnetron sputter cathode with controlled magnetic field adjustments addresses the limitations of conventional sputtering systems by enhancing deposition uniformity and material utilization, reducing costs and simplifying setup processes.

WO2025244640A1PCT designated stage Publication Date: 2025-11-27APPLIED MATERIALS INC
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Patent Information

Application Number
PCT/US2024/030736
Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
Filing Date
2024-05-23
Publication Date
2025-11-27

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Abstract

A magnetron sputter cathode (100) is described. The magnetron sputter cathode (100) at least one magnet assembly (120) including a yoke (130) connecting a first permanent magnet (121), a second permanent magnet (122) and a third permanent magnet (123). Further, the magnetron sputter cathode (100) includes the at least one coil (140) provided around the yoke (130). Additionally, a method of operating a magnetron sputter cathode, a sputter deposition source, and a method of operating a sputter deposition source are described.
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Citation Information

Patent Citations

  • Sputtering cathode and magnetron sputtering equipment

    CN116288218A

  • Electrode unit for plasma CVD apparatus

    KR1020150015161A

  • Sputtering apparatus and method

    US20150041310A1

  • Method of depositing a layer in a via or trench and products obtained thereby

    WO2015199640A1

  • KR20200138176A