Inspection device and inspection method

WO2026063383A1PCT designated stage Publication Date: 2026-03-26LASERTEC CORP
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Patent Information

Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
Filing Date
2025-09-16
Publication Date
2026-03-26

AI Technical Summary

Technical Problem

Existing mask inspection techniques using EUV light face challenges in achieving high resolution due to the miniaturization of semiconductor patterns and defects, particularly in handling specularly reflected and higher-order diffracted light components.

Method used

An inspection apparatus and method that utilizes an illumination optical system, a condensing member, and an imaging optical system to form images of both specularly reflected and higher-order diffracted light on a light detection unit, with specific regions and symmetrical arrangements to enhance light gathering and imaging, allowing for improved resolution.

Benefits of technology

The apparatus and method effectively improve resolution by capturing and imaging both specularly reflected and higher-order diffracted light components, enhancing defect detection capabilities in photomasks.

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Abstract

An inspection device according to the present embodiment comprises: an illumination optical system (100) for illuminating an object (400) with illumination light (L10); an imaging optical system (220a) that includes a condensing member (210) for condensing light (L20) from the object (400) illuminated with the illumination light (L10), and images the light (L20) condensed by the condensing member (210) onto a light detection unit (230); and a processing unit (300) that inspects the object (400) on the basis of the image imaged on the light detection unit (230). When an object plane (410) is set between the object (400) and the condensing member (210), the object plane (410) has: a condensing region (520) including a first condensing region and a second condensing region; and an illumination light region (510) surrounded by the second condensing region. The first condensing region is associated with regular reflection light (L21), and the second condensing region is associated with high-order diffraction light (L22). The first condensing region is surrounded by the second condensing region.
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Citation Information

Patent Citations

  • Inspection device and inspection method

    JP2021124446A

  • Apparatus and method for measuring phase of extreme ultraviolet (EUV) mask and method of fabricating EUV mask including the method

    US20210293701A1

  • KR20230064752A