Read-and-write head device structure, magnetic head, magnetic storage apparatus, and electronic device

Abstract

A read-and-write head device structure, a magnetic head, a magnetic storage apparatus, and an electronic device. The read-and-write head device structure comprises a coil and a magnetic flux path which are stacked on a substrate layer, and the coil and the magnetic flux path of the read-and-write head device structure are embedded in an insulating dielectric layer; the magnetic flux path comprises a first magnetically conductive layer and a second magnetically conductive layer; the first magnetically conductive layer is arranged close to the substrate layer; the second magnetically conductive layer is located on the side of the first magnetically conductive layer distant from the substrate layer; and the coil is spirally wound on the first magnetically conductive layer or the second magnetically conductive layer, and is wound layer by layer in a first direction in which the first magnetically conductive layer or the second magnetically conductive layer extends. By means of the configuration, the three-dimensional space of a read-and-write head is fully utilized to form a coil structure, and a coil is spirally wound between a first end and a second end of a first magnetically conductive layer or a second magnetically conductive layer, thereby reducing the size of a read-and-write head device in a read-and-write surface extension direction; and by improving the magnetic field writing density and read-and-write efficiency, good magnetic storage performance can be achieved, thereby satisfying the use requirements of different high-density data storage scenarios.

Description

Read / write head device structure, magnetic head, magnetic storage device and electronic equipment

[0001] This application claims priority to Chinese Patent Application No. 202411616629.9, filed with the State Intellectual Property Office of China on November 12, 2024, entitled "Read / Write Head Device Structure, Magnetic Head, Magnetic Storage Device and Electronic Equipment", the entire contents of which are incorporated herein by reference. Technical Field

[0002] This application relates to the field of data storage technology, and in particular to a read / write head device structure, a magnetic head, a magnetic storage device, and an electronic device. Background Technology

[0003] With the rapid development of computing and storage, the storage density of magnetic storage media is constantly increasing. To store more data within the same physical space, the demand for high-density writing in magnetic storage is also growing. Traditional data write head technology uses a write head array to simultaneously read and write data at different locations on a disk or magnetic tape to improve data transfer rates. The individual device structure of this write head array employs a flat coil structure. However, limited by the flat coil structure, the physical size of the magnetic head cannot accommodate narrower track widths, directly affecting the evolution of the writing magnetic field density per unit area. Summary of the Invention

[0004] This application provides a read / write head device structure, a magnetic head, a magnetic storage device, and an electronic device. Through structural optimization, the writing magnetic field density and read / write efficiency per unit area can be improved.

[0005] A first aspect of this application provides a read / write head device structure, which includes a coil and a magnetic path stacked on a substrate layer, with the coil and magnetic path embedded in an insulating dielectric layer. The magnetic path includes a first magnetically conductive layer and a second magnetically conductive layer. The first magnetically conductive layer is disposed close to the substrate layer, and the second magnetically conductive layer is located on the side of the first magnetically conductive layer away from the substrate layer. A magnetic head air gap is formed between a first end of the first magnetically conductive layer and a first end of the second magnetically conductive layer. The opening of the magnetic head air gap is located on the read / write surface of the read / write head device structure. The second ends of the first and second magnetically conductive layers are connected by a magnetically conductive connecting portion. The coil is spirally wound around the first or second magnetically conductive layer, and is wound layer by layer along a first direction extending from the first or second magnetically conductive layer. This configuration fully utilizes the three-dimensional space of the read / write head to form the coil structure. By spirally winding the coil between the first and second ends of the first or second magnetically conductive layer, the size of the read / write head device in the direction extending from the read / write surface can be reduced, effectively increasing the writing magnetic field density per unit area and achieving higher density writing requirements.

[0006] Furthermore, increasing the writing magnetic field density allows for a greater number of read / write head devices that can be arranged per unit area, improving the speed of parallel data transmission and thus enhancing data read / write efficiency. Overall, by improving both magnetic field writing density and read / write efficiency, excellent magnetic storage performance can be achieved, meeting the needs of various high-density data storage scenarios.

[0007] Based on the first aspect, this application also provides a first implementation of the first aspect: In the stacking direction, the coil includes a first layer of coil bodies, a connecting coil body, and a second layer of coil bodies formed sequentially. Multiple first layer coil bodies are located on one side of the coiled magnetically conductive layer (e.g., a first magnetically conductive layer or a second magnetically conductive layer), and multiple second layer coil bodies are located on the other side of the coiled magnetically conductive layer. In the first direction, each first layer coil body and each second layer coil body are arranged sequentially at intervals, and the two ends of the first layer coil bodies and the second layer coil bodies are respectively connected by multiple connecting coil bodies to form a coil wound layer by layer. This allows for formation through a stacking growth process, resulting in good manufacturability.

[0008] Based on the first embodiment of the first aspect, this application also provides a second embodiment of the first aspect: a first layer coil body extends along a second direction, a second layer coil body extends in a direction forming an angle with the second direction, and a connecting coil body extends in a stacking direction; both ends of each second layer coil body are respectively connected to two adjacent first layer coil bodies through connecting coil bodies, a first end of a second layer coil body is connected to the first end of one of the first layer coil bodies, and a second end of a second layer coil body is connected to the second end of the other of the first layer coil bodies; wherein, the second direction and the first direction are two intersecting directions in the plane where the substrate layer is located. Based on the structural feature that the first and second layer coil bodies extend separately, the connecting coil body can extend in the stacking direction, which can reduce the overall manufacturing difficulty of the coil; thus, manufacturing costs can be reduced, and a good technical guarantee for improving product yield can be provided.

[0009] Based on the first aspect, or the first implementation of the first aspect, or the second implementation of the first aspect, this application also provides a third implementation of the first aspect: the coil can be spirally wound on the first magnetic layer, and the second magnetic layer is in the shape of an outwardly protruding arc; or, the coil can also be spirally wound on the second magnetic layer, and the first magnetic layer is in the shape of an outwardly protruding arc. In this way, based on the outwardly protruding arc-shaped magnetic layer (the first magnetic layer or the second magnetic layer), the local magnetic concentration and blockage of magnetic induction lines at the first and second ends of the magnetic layer can be improved. Compared with a magnetic flux loop with a right-angle bend structure, this application embodiment can construct a smooth magnetic flux loop that can improve the read and write speed, effectively avoid local magnetic field disturbances, and ensure that a high magnetic field strength is formed at the pole tip.

[0010] Based on the first aspect, or the first embodiment of the first aspect, or the second embodiment of the first aspect, or the third embodiment of the first aspect, this application also provides a fourth embodiment of the first aspect: the first end of the first magnetically conductive layer is stepped towards the second magnetically conductive layer, and the first end of the first magnetically conductive layer includes a first pole tip for forming the air gap of the magnetic head, the magnetic cross-section of the first pole tip being smaller than the magnetic cross-section of the body of the first magnetically conductive layer. Based on this stepped pole tip structure configuration, the writing magnetic field strength formed at the pole tip can be further enhanced, providing a good technical guarantee for ensuring the signal quality and accuracy of the read / write head.

[0011] Based on the fourth implementation of the first aspect, this application also provides a fifth implementation of the first aspect: the first end of the first magnetic layer further includes a magnetically conductive portion, which is connected between the body of the first magnetically conductive layer and the first pole tip. This facilitates the implementation of the specific structure of the coil spirally wound on the first magnetically conductive layer, and allows the coil to be constructed according to the performance requirements of different application scenarios, thus exhibiting good design flexibility.

[0012] In practical applications, the projection of the magnetic conductive part onto the read / write surface is gradually tapering towards the first pole tip, which can further improve the smoothness of the magnetic flux circuit.

[0013] Based on the fourth or fifth implementation of the first aspect, this application also provides a sixth implementation of the first aspect: the magnetic induction intensity of the material at the first pole tip is greater than the magnetic induction intensity of the material in other parts of the first magnetically conductive layer. This further increases the magnetic field strength per unit area.

[0014] For example, the first pole tip is made of cobalt-iron material, and the other structural parts of the first magnetic layer are made of nickel-iron material.

[0015] Based on the first aspect, or the first embodiment of the first aspect, or the second embodiment of the first aspect, or the third embodiment of the first aspect, or the fourth embodiment of the first aspect, or the fifth embodiment of the first aspect, or the sixth embodiment of the first aspect, this application also provides a seventh embodiment of the first aspect: the first end of the second magnetic layer is stepped towards the first magnetic layer, and the first end of the second magnetic layer includes a second pole tip for forming the air gap of the magnetic head, the magnetic cross-section of the second pole tip is smaller than the magnetic cross-section of the body of the second magnetic layer. Based on this stepped pole tip structure configuration, the writing magnetic field strength formed at the pole tip can be further enhanced, providing a good technical guarantee for ensuring the signal quality and accuracy of the read / write head.

[0016] In practical applications, the projection of the magnetically conductive segment connecting the first end of the second magnetic layer to the second pole tip onto the read / write surface is a gradually tapering shape that decreases towards the second pole tip, which can further improve the smoothness of the magnetic flux loop.

[0017] Based on the seventh embodiment of the first aspect, this application also provides an eighth embodiment of the first aspect: the magnetic induction intensity of the material at the second pole tip is greater than the magnetic induction intensity of the material in other parts of the second magnetically conductive layer. This further increases the magnetic field strength per unit area.

[0018] Based on the first aspect, or the first embodiment of the first aspect, or the second embodiment of the first aspect, or the third embodiment of the first aspect, or the fourth embodiment of the first aspect, or the fifth embodiment of the first aspect, or the sixth embodiment of the first aspect, or the seventh embodiment of the first aspect, or the eighth embodiment of the first aspect, this application also provides a ninth embodiment of the first aspect: the read / write head device structure further includes a ground layer, which is stacked and formed on the magnetic path. This configuration effectively prevents the coil current from affecting the magnetic flux performance of the magnetic path.

[0019] For example, the grounding layer can be applied to the surface of the first magnetic layer near the substrate layer, which has good processability.

[0020] Alternatively, the grounding layer can also be applied to the surface of the second magnetic layer away from the substrate layer, which also provides good processability.

[0021] Based on the first aspect, or the first implementation of the first aspect, or the second implementation of the first aspect, or the third implementation of the first aspect, or the fourth implementation of the first aspect, or the fifth implementation of the first aspect, or the sixth implementation of the first aspect, or the seventh implementation of the first aspect, or the eighth implementation of the first aspect, or the ninth implementation of the first aspect, this application also provides a tenth implementation of the first aspect: the coils and magnetic paths stacked on the substrate are arranged in multiple groups and are sequentially spaced apart in the second direction. In this way, writing or reading operations are performed in parallel based on multiple read / write heads, meeting the storage needs of higher-density magnetic recording signals.

[0022] Based on the tenth embodiment of the first aspect, this application also provides an eleventh embodiment of the first aspect: the two connection ends of each coil are electrically connected to the corresponding external electrode through a first interconnect layer and a second interconnect layer, respectively; in the third direction, the first interconnect layer is stacked on one end of the coil and connected to the first external electrode; the second interconnect layer is stacked on the other end of the coil and connected to the second external electrode. In this way, current is supplied to each read / write head coil using the metal interconnect layer, and the resulting high-intensity magnetic field flows through the magnetic circuit, forming a writing magnetic field in the pole tip structure. This approach features a reliable structure that is easy to implement.

[0023] In practical applications, the first external electrode and the second external electrode can be located on the same side surface of the read / write head device structure, which facilitates external interconnection.

[0024] Based on the first aspect, or the first embodiment of the first aspect, or the second embodiment of the first aspect, or the third embodiment of the first aspect, or the fourth embodiment of the first aspect, or the fifth embodiment of the first aspect, or the sixth embodiment of the first aspect, or the seventh embodiment of the first aspect, or the eighth embodiment of the first aspect, or the ninth embodiment of the first aspect, or the tenth embodiment of the first aspect, or the eleventh embodiment of the first aspect, this application also provides a twelfth embodiment of the first aspect: the read / write head device structure further includes a flat coil, the flat coil is wrapped around the magnetically conductive connecting portion, and a portion of the coil structure of the flat coil is located between the first magnetically conductive layer and the second magnetically conductive layer. This configuration, by supplementing the spirally wound coil with a flat coil, can further improve the magnetic field strength.

[0025] For example, the flat coil can be configured as a plurality of flat coils, which are spaced apart along the extension direction of the magnetic connection portion.

[0026] A second aspect of this application provides a magnetic head, which includes a read / write head device employing the read / write head device structure described above. Based on this read / write head device structure, the magnetic field write density and read / write efficiency can be effectively improved, meeting the needs of different high-density storage scenarios.

[0027] A third aspect of this application provides a magnetic storage device, which includes a housing, a magnetic head, and a magnetic storage medium. The magnetic head and the magnetic storage medium are located inside the housing, and the magnetic head is a magnetic head as described above.

[0028] For example, the magnetic storage medium can be a magnetic tape, or it can also be a magnetic disk.

[0029] A fourth aspect of this application provides an electronic device including a magnetic storage device, which employs the magnetic storage device described above. Based on the read / write head device structure provided in this application embodiment, the magnetic field write density and read / write efficiency can be effectively improved, meeting the needs of different high-density storage scenarios.

[0030] For example, the electronic device can be an electronic device with storage devices, such as a server, switch, or data center. Attached Figure Description

[0031] Figure 1 is a schematic diagram of a read / write head device structure provided in an embodiment of this application;

[0032] Figure 2 is a view from direction A in Figure 1;

[0033] Figure 3 is a cross-sectional view of BB in Figure 1;

[0034] Figure 4 is a CC cross-sectional view of Figure 1;

[0035] Figure 5 is a schematic diagram of the dicing process of a read / write head device array provided in an embodiment of this application;

[0036] Figure 6 is a schematic diagram of the layout of the first layer of coil body shown in Figure 1;

[0037] Figure 7 is a schematic diagram of the layout of the first layer of coil body shown in Figure 1;

[0038] Figure 8 is a schematic diagram of the manufacturing process of a read / write head device structure provided in an embodiment of this application;

[0039] Figure 9 is a schematic diagram of another read / write head device structure provided in an embodiment of this application;

[0040] Figure 10 is a view along direction D in Figure 9;

[0041] Figure 11 is a schematic diagram of another read / write head device structure provided in an embodiment of this application;

[0042] Figure 12 is a schematic diagram of the manufacturing process of another read / write head device structure provided in an embodiment of this application;

[0043] Figure 13 is a schematic diagram of another read / write head device structure provided in an embodiment of this application;

[0044] Figure 14 is the E-direction view in Figure 13;

[0045] Figure 15 is a schematic diagram of the manufacturing process of another read / write head device structure provided in the embodiments of this application;

[0046] Figure 16 is a schematic diagram of another read / write head device structure provided in an embodiment of this application;

[0047] Figure 17 is a cross-sectional view of FF in Figure 16;

[0048] Figure 18 is a schematic diagram of a magnetic storage device provided in an embodiment of this application. Detailed Implementation

[0049] This application provides a structural implementation scheme for a read / write head device for magnetic storage. Through structural optimization, the size of the read / write head device can be reasonably controlled, effectively improving the writing magnetic field density and read / write efficiency per unit area, thus providing a good technical guarantee for high-density data storage.

[0050] In the field of magnetic storage, storage capacity and access efficiency are important indicators characterizing magnetic storage performance. With the development of information technology, the storage density of magnetic storage media is constantly increasing, while the demand for high-density writing of magnetic storage is also growing. To improve data read and write efficiency, read / write head arrays can be used to perform data read and write operations simultaneously at different locations on a disk or magnetic tape.

[0051] In a typical read / write head device, a flat coil structure is usually used to generate a write magnetic field or form a read induced current. However, for read / write head device arrays, the layout characteristics based on the flat coil structure cannot adapt to narrower track widths, which limits the improvement of the write magnetic field density per unit area, and thus affects the further improvement of access efficiency, resulting in a bottleneck in the evolution of access efficiency.

[0052] Based on this, this application provides a read / write head device structure, which includes a coil and a magnetic path stacked on a substrate layer, with the coil and magnetic path embedded in an insulating dielectric layer. The magnetic path includes a first magnetically conductive layer, a second magnetically conductive layer, and a magnetically conductive connecting portion. The first magnetically conductive layer is disposed close to the substrate layer, and the second magnetically conductive layer is located on the side of the first magnetically conductive layer away from the substrate layer. A magnetic head air gap is formed between the first end of the first magnetically conductive layer and the first end of the second magnetically conductive layer. The opening of the magnetic head air gap is located on the read / write surface of the read / write head device structure. The second end of the first magnetically conductive layer and the second end of the second magnetically conductive layer are connected through the magnetically conductive connecting portion. The coil is spirally wound on the first magnetically conductive layer or the second magnetically conductive layer, and is wound layer by layer along the extension direction of the first magnetically conductive layer or the second magnetically conductive layer. Here, "first end" refers to the end of the magnetically conductive layer constituting the magnetic path that faces the read / write surface, and "second end" refers to the other end of the magnetically conductive layer constituting the magnetic path that faces away from the read / write surface.

[0053] With this configuration, the coil is spirally wound between the first and second ends of the first or second magnetic layer, making full use of the three-dimensional space of the read / write head to form the coil structure. This reduces the size of the read / write head device in the direction of the read / write surface extension, effectively increases the writing magnetic field density per unit area, and enables higher density writing requirements.

[0054] Furthermore, by increasing the writing magnetic field density, the number of read / write head devices that can be arranged per unit area can be increased, effectively improving the parallel data transmission speed and thus enhancing data read / write efficiency. Overall, by improving both the magnetic field writing density and read / write efficiency, excellent magnetic storage performance is achieved to meet the needs of various high-density data storage scenarios.

[0055] To better understand the technical solution and effects of this application, a magnetoelectric disk is used as the object of description, and specific embodiments are described in detail below with reference to the accompanying drawings. Please refer to Figures 1 and 2. Figure 1 is a schematic diagram of a read / write head device structure provided by an embodiment of this application. This figure is formed from a view directly facing the read / write surface of the read / write head device. Figure 2 is a view from direction A in Figure 1. The read / write surface S of this read / write head device structure is approximately perpendicular to the plane where the substrate layer 30 is located. It should be noted that, ideally, the read / write surface S is perpendicular to the plane where the substrate layer 30 is located. However, due to the limitations of stacking and cutting process precision, the approximate perpendicularity between the read / write surface S and the plane where the substrate layer 30 is located can be understood as including a certain deviation within the range of process precision limitations, rather than being completely perpendicular. It should be understood that as long as the read / write surface S can meet the functional requirements for adapting to magnetic media materials, it is acceptable, and the embodiments of this application are not limited.

[0056] For ease of description, the plane where the substrate 30 is located is used as the reference plane, and two different extension directions are defined: the first direction X and the second direction Y, and the stacking direction based on the substrate 30 is defined as the third direction Z.

[0057] As shown in Figures 1 and 2, the read / write head device structure 100 includes a coil 20 and a magnetic path 10, which are stacked on a substrate layer 30 and embedded in an insulating dielectric layer. Specifically, in the third direction Z, the first magnetically conductive layer 101 of the magnetic path 10 is disposed close to the substrate layer 30 of the read / write head device structure 100, and the second magnetically conductive layer 102 of the magnetic path 10 is located on the side of the first magnetically conductive layer 101 away from the substrate layer 30; that is, the second magnetically conductive layer 102 is disposed further away from the substrate layer 30 than the first magnetically conductive layer 101.

[0058] A magnetic head air gap δ is formed between the first end of the first magnetic layer 101 and the first end of the second magnetic layer 102. The opening of the magnetic head air gap δ is located on the read / write surface S of the read / write head device structure. The second end of the first magnetic layer 101 and the second end of the second magnetic layer 102 are connected by a magnetic connection portion 103 to form a magnetic path 10. In this way, based on the magnetic head air gap δ, the magnetic field can be concentrated and guided to be extracted from the magnetic head side, thereby magnetizing the storage medium, and enabling the vertical writing of 1 bit of data with a nanometer-level width on the magnetic storage medium. For example, but not limited to, a magnetic medium material is used to magnetize the surface of the magnetic tape 200, and when the magnetic tape 200 moves in the direction shown by the arrow in Figure 2, data writing or reading operations can be realized.

[0059] The first magnetically conductive layer 101 extends along the first direction X, forming a first end near the read / write surface S and a second end away from the read / write surface S. The coil 20 is spirally wound around the first magnetically conductive layer 101, and is wound layer by layer along the extending direction of the first magnetically conductive layer 101. Please refer to Figures 3 and 4 together, where Figure 3 is a BB cross-sectional view of Figure 1, and Figure 4 is a CC cross-sectional view of Figure 1.

[0060] In this embodiment, the coil 20 is spirally wound between the first and second ends of the first magnetically conductive layer 101. The spiral coil, which meets the magnetic field strength requirements, is arranged within the space of the substrate plane, forming a coil 20 whose center line is perpendicular to the read / write surface S. Please also refer to Figure 5, which is a schematic diagram of the dicing process for a read / write head device array provided in this embodiment. In a specific implementation, the read / write head device can be formed by dicing a pre-fabricated wafer W.

[0061] As shown in Figure 5, the fabricated wafer W includes multiple arrayed read / write head devices, which can be diced to form a composite structural unit W1. This composite structural unit W1 includes multiple read / write head device structures 100a, which can be diced to form read / write head devices 100a. Each read / write head device structure 100a includes multiple read / write head device structures (100-1, 100-2…100-n), which are arranged sequentially at intervals to form a read / write head device array structure. Thus, based on the read / write head device structure provided in this embodiment, by utilizing the three-dimensional space of the read / write head to form a coil structure, the space occupied in the stacking direction can be reduced, effectively reducing the size of the read / write head device in the reading / writing surface extension direction, and significantly improving the writing magnetic field density per unit area.

[0062] For the spirally wound coil 20, in the third direction Z of the device stack, the coil 20 may include a first layer coil body 201, a connecting coil body 203, and a second layer coil body 202 formed sequentially. Referring to Figures 1, 2, and 3, each first layer coil body 201 is located on the side of the first magnetically conductive layer 101 closer to the substrate layer 30, and each second layer coil body 202 is located on the other side of the first magnetically conductive layer 101 away from the substrate layer 30; in the first direction X, each first layer coil body 201 and each second layer coil body 202 are arranged sequentially at intervals, that is, arranged sequentially at intervals along the extension direction of the first magnetically conductive layer 101; and the two ends of the first layer coil body 201 and the second layer coil body 202 are connected by multiple connecting coil bodies 203 respectively, forming a coil 20 wound layer by layer.

[0063] Please refer to Figures 6 and 7 together. Figure 6 is a schematic diagram of the layout of the first layer of coil bodies shown in Figure 1, and Figure 7 is a schematic diagram of the layout of the first layer of coil bodies shown in Figure 1. Referring to Figures 5 and 6, the first layer of coil bodies 201 extends in the second direction Y, and includes a first end 201a and a second end 201b. Referring to Figures 5 and 7, the second layer of coil bodies 202 extends in a direction forming an angle with the second direction Y, and includes a first end 202a and a second end 202b. Referring to Figures 2, 3, and 4, the connecting coil body 203 extends in the third direction Z. In a specific implementation, the two ends of the second layer coil body 202 are respectively connected to two adjacent first coil bodies 201 through connecting coil bodies 203. The first end 202a of the second layer coil body 202 is connected to the first end 201a of one of the first coil bodies 201 through connecting coil bodies 203. The second end 202b of the second layer coil body 202 is connected to the second end 201b of the other first coil body 201 through connecting coil bodies 203, forming a coil 20 wound layer by layer.

[0064] In other specific implementations, the arrangement direction of the first layer coil body 201 and the second layer coil body 202 can also be adjusted. For example, the second layer coil body 202 can extend in the second direction Y, and correspondingly, the first layer coil body 201 can extend in a direction forming an angle with the second direction Y (not shown in the figure). In this way, the two ends of the first layer coil body 201 are respectively connected to two adjacent second layer coil bodies 202 through connecting coil bodies 203, which can also form a coil wound layer by layer. The embodiments of this application are not limited.

[0065] In other possible implementations, the shapes of the first layer coil body 201 and the second layer coil body 202 can also be set as arc-shaped coil bodies or other irregularly shaped coil bodies (not shown in the figure), rather than being limited to the strip coil body shown in the figure. It should be understood that any coil body 203 that can be stacked and formed on the third direction Z can be connected sequentially to form a coil 20 wound layer by layer. Relatively speaking, the first layer coil body 201 and the second layer coil body 202 adopting the strip coil body shown in the figure have better manufacturability. The embodiments of this application are not limited.

[0066] To achieve a higher magnetic field for writing, a stepped, layered tip can be used to form the head air gap δ in a specific implementation. As shown in Figure 2, the first end 104 of the first magnetically conductive layer 101 is stepped towards the second magnetically conductive layer 102. The first end 104 includes a magnetically conductive portion 1042 and a first tip 1041 for forming the head air gap δ. The magnetically conductive portion 1042 connects the body of the first magnetically conductive layer 101 and the first tip 1041. The magnetic cross-section of the first tip 1041 is smaller than that of the magnetically conductive portion 1042. This allows for the convergence of a higher magnetic field strength, which can be guided through the head air gap δ to the magnetic medium material side, effectively mitigating the potential impact of magnetic field divergence on the read / write signal quality and accuracy.

[0067] Correspondingly, the first end of the second magnetically conductive layer 102 may also be stepped towards the first magnetically conductive layer 101, and includes a second pole tip 105 for forming the air gap δ of the magnetic head. The magnetic cross-section of the second pole tip 105 is smaller than that of the body of the second magnetically conductive layer 102. With this configuration, the second pole tip 105 and the first pole tip 1041 work together to further concentrate and increase the magnetic field strength.

[0068] In a specific implementation, the first magnetically conductive layer 101 and the second magnetically conductive layer 102 can be made of cobalt-iron or nickel-iron materials. To further improve the magnetic field strength, the body of the first magnetically conductive layer 101, the magnetically conductive part 1042, and the body of the second magnetically conductive layer 102 are made of nickel-iron materials; correspondingly, the second pole tip 105 and the first pole tip 1041 can be made of cobalt-iron materials. That is, the magnetic induction intensity of the material at the pole tip is greater than the magnetic induction intensity of the material in other parts of the magnetic passage 10, so as to generate a stronger magnetic field per unit area.

[0069] Of course, in other possible implementations, each component of the magnetic path 10 can be made of nickel-iron or cobalt-iron materials.

[0070] In addition, to avoid the coil current affecting the magnetic flux performance of the magnetic path 10, a ground layer 40 can be stacked on the magnetic path 10 in a specific implementation. As shown in Figures 1 to 3, the ground layer 40 covers the surface of the first magnetically conductive layer 101 near the substrate layer 30.

[0071] In other specific implementations, the ground layer 40 can also be covered on the surface of the second magnetic layer 102 away from the substrate layer 30, which also has good processability.

[0072] In the aforementioned embodiment, the coil 20 is spirally wound on the first magnetically conductive layer 101. In other possible embodiments, the coil 20 is spirally wound on the second magnetically conductive layer 102, and wound layer by layer along the extending direction of the second magnetically conductive layer 102 (not shown in the figure). Similarly, by utilizing the three-dimensional space of the read / write head to form the coil structure, the space occupied in the stacking direction can be reduced.

[0073] In the case where the coil 20 is spirally wound around the second magnetic layer 102, the ground layer 40 can also be applied to the surface of the second magnetic layer 102 away from the substrate layer 30. In other possible implementations, the ground layer 40 can also be applied to the opposing surfaces of the first magnetic layer 101 and the second magnetic layer 102, that is, the surface of the first magnetic layer 101 opposite to the second magnetic layer 102, or the surface of the second magnetic layer 102 opposite to the first magnetic layer 101. Comparatively, applying the ground layer 40 to the opposing surfaces of the first magnetic layer 101 and the second magnetic layer 102, that is, the surface of the first magnetic layer 101 near the substrate layer 30, or the surface of the second magnetic layer 102 away from the substrate layer 30, provides better stacking processability.

[0074] The following is a brief explanation of the stacking process of the read / write head device structure 100 described in Figure 1, with reference to Figure 8.

[0075] Step S801: Prepare a substrate layer. In a specific implementation, the substrate layer 30 can be made of an insulating dielectric material, such as, but not limited to, quartz, sapphire, silicon oxide, or other oxide insulating dielectric materials.

[0076] In other specific implementations, the substrate layer 30 can also be made of a conductive material, such as, but not limited to, silicon or aluminum titanium carbon. Of course, for the conductive substrate layer 30, an insulating dielectric layer (not shown in the figure) needs to be formed on the conductive substrate layer 30 before fabricating the first coil body 201.

[0077] In other possible implementations, the substrate 30 may also be made of other semiconductor elements or compounds. This application does not limit the scope of the embodiments.

[0078] Step S802: Fabrication of the first coil body. First, a photolithography process is used to form the pattern of the first coil body on the substrate layer 30; then, a metal layer is formed by film deposition and the photoresist is peeled off to form the first coil body 201, the pattern of which can be seen in Figure 6; next, an insulating dielectric layer 802-1 is formed by film deposition and the surface is polished to form a flat surface.

[0079] In specific implementations, a metal layer can be formed by deposition techniques, such as, but not limited to, chemical vapor deposition (CVD) or atomic layer deposition (ALD). The specific method can be selected according to the actual needs of the process, and the embodiments in this application are not limited thereto.

[0080] The metal layer forming the first coil body 201 can be deposited using materials such as gold, silver, or copper. For example, the dimensions of the first coil body 201 can be: height 0.1 μm to 10 μm, width 0.1 μm to 10 μm, and length 1 μm to 100 μm. Preferably, before forming the metal layer, a protective layer (not shown in the figure) can be formed first, for example, but not limited to, using materials such as titanium or titanium nitride.

[0081] In a specific implementation, an insulating dielectric layer 803-1 can be formed between each first layer coil body 201 by deposition technology, for example, but not limited to, using materials such as alumina or silicon oxide.

[0082] Step S803: Prepare the first magnetically conductive layer. First, the first magnetically conductive layer 101 can be prepared by photolithography and deposition processes. Then, an insulating dielectric layer 803-1 is grown by deposition and polished to form a smooth surface.

[0083] In a specific implementation, a first magnetically conductive layer 101 is formed by depositing nickel-iron material; similar to step S802, an insulating dielectric layer 803-1 can be formed by using materials such as aluminum oxide or silicon oxide.

[0084] Preferably, for a magnetic path structure with a grounding layer, the grounding layer 40 can be formed by coating and growing between the formation of the first magnetic conductive layer 101.

[0085] Step S804: Fabrication of the connecting coil body. Specifically, a coil via layer can be formed using photolithography, deposition, and etching processes, and the connecting coil body 203 can be formed by deposition of materials such as gold, silver, or copper. Referring to Figures 2 and 4, a columnar connecting coil body 203 is grown from both ends (first end 201a and second end 201b) of each first layer coil body 201. Exemplarily, the dimensions of the connecting coil body 203 can be: height 1 μm to 100 μm, width 0.1 μm to 10 μm, and length 0.1 μm to 10 μm.

[0086] Step S805: Prepare the second coil body. The pattern of the second coil body is formed by photolithography, a metal layer is formed by film deposition and growth, the photoresist is peeled off to form the second coil body 202, an insulating dielectric layer 805-1 is formed by film deposition and growth, and a smooth surface is formed by grinding.

[0087] Here, the pattern of the second layer coil body 202 can be seen in Figure 7. The specific process and material selection can be the same as in step S802.

[0088] Step S806: Fabricate the magnetic support pillar. Specifically, the magnetic support pillar can be fabricated using processes such as photolithography, deposition, etching, and polishing to form the magnetic connection portion 103 and the magnetic part 1042. In a specific implementation, the magnetic connection portion 103 and the magnetic part 1042 can be formed by nickel-iron material deposition.

[0089] Step S807: Fabrication of the first pole tip. First, a magnetically conductive layer for the pole tip is fabricated using processes such as photolithography, deposition, etching, and polishing to form the first pole tip 1041. Then, a dielectric insulating layer 807-1 is deposited and grown, and polished to form a smooth surface.

[0090] In a specific implementation, the first pole tip 1041 can be formed by depositing cobalt-iron material, and the pole tip insulating dielectric layer 807-1 can be formed by materials such as alumina or silicon oxide. For example, the dimensions of the first pole tip 1041 can be: height 0.001μm to 20μm, width 0.01μm to 100μm, and length 0.01μm to 100μm. Here, a portion of the magnetically conductive structure 103-1 on the side of the magnetically conductive connection portion 103 can be stacked in the same layer, forming a magnetic path that meets performance requirements while also possessing good manufacturability.

[0091] In other specific implementations, the magnetically conductive structure 103-1 on the magnetically conductive connection portion 103 side can also be formed by stacking nickel-iron materials. This application does not limit the specific implementation.

[0092] Here, the thickness of the pole tip insulating dielectric layer 807-1 located at the top of the first pole tip 1041 can be 0.001 to 20 μm, which is consistent with the size of the air gap δ of the magnetic head.

[0093] Step S808: Fabrication of the second pole tip. First, a pole tip magnetic conductive layer is fabricated using photolithography, deposition, etching, and polishing processes to form the second pole tip 105. Then, a pole tip insulating dielectric layer 808-1 is deposited and grown, and polished to form a smooth surface.

[0094] In a specific implementation, the second pole tip 105 can be formed by depositing cobalt-iron material, and the pole tip insulating dielectric layer 808-1 can be formed by materials such as alumina or silicon oxide. Similarly, in order to obtain good processability, a portion of the magnetically conductive structure 103-2 on the side of the magnetically conductive connection 103 can be stacked in the same layer.

[0095] In other specific implementations, the magnetically conductive structure 103-2 on the magnetically conductive connection portion 103 side can also be formed by stacking nickel-iron materials. This application does not limit the specific implementation.

[0096] Step S809: Prepare the second magnetic permeable layer. First, the second magnetic permeable layer 102 can be prepared by photolithography and deposition processes. Then, an insulating dielectric layer 809-1 is grown by deposition and polished to form a smooth surface.

[0097] In a specific implementation, a second magnetically conductive layer 102 is formed by depositing nickel-iron material, and an insulating dielectric layer 809-1 can be formed by using materials such as aluminum oxide or silicon oxide.

[0098] The sheet material produced based on the above stacking process can be cut according to the actual size of the device to form a read / write head device structure 100.

[0099] Furthermore, for the read / write head device array structure, the interconnection layer and external electrodes between the read / write head devices can be constructed in the aforementioned process. Please refer to Figures 9 and 10 together, where Figure 9 is a schematic diagram of another read / write head device structure provided by an embodiment of this application, and Figure 10 is a view from direction D in Figure 9. Figures 9 and 10 show the read / write head device array structure. In order to clearly show the differences and connections between this embodiment and the aforementioned embodiments, the same functional components or structures are indicated by the same reference numerals in the figures.

[0100] As shown in Figure 9, the read / write head device structure 100a includes four read / write head devices, with the magnetic path 10 and coil 20 of each read / write head device arranged sequentially at intervals in the second direction Y. The two connection ends of the coil 20 are electrically connected to the corresponding external electrodes through the first interconnect layer 511 and the second interconnect layer 521, respectively. Specifically, in the third direction Z, the first interconnect layer 511 is stacked on one end of the coil 20 and connected to the first external electrode 512; the second interconnect layer 521 is stacked on the other end of the coil 20 and connected to the second external electrode 522.

[0101] In a practical implementation, the first external electrode 512 and the second external electrode 522 can be formed by depositing materials such as gold, silver, or copper. Furthermore, the corresponding first external electrode 512 and second external electrode 522 of each read / write head device can be independently interconnected with external circuitry. In this way, by using the metal interconnect layer to provide current to the coils of each read / write head, a high-intensity magnetic field is generated that flows through the magnetic circuit and forms a writing magnetic field at the pole tip structure. Based on multiple read / write heads performing parallel write or read operations, the storage requirements for higher-density magnetic recording signals are met.

[0102] As shown in the figure, the first external electrode 512 and the second external electrode 522 can be located on the same side surface of the read / write head device structure 100a, which facilitates interconnection with external circuits. In other specific implementations, each of the first external electrodes 512 can be connected through the first interconnect conductor layer 513 shown by the dashed line in the figure, and each of the second external electrodes 522 can also be connected through the second interconnect conductor layer 523 shown by the dashed line in the figure. It should be understood that the figure shows only one exemplary interconnection implementation method, and in other specific implementations, the design can be carried out according to the overall product design requirements. The embodiments of this application are not limited.

[0103] In the foregoing embodiments, a pole tip is provided at the first end of both the first magnetic layer 101 and the second magnetic layer 102. In other specific implementations, the second pole tip 105 on the first end side of the second magnetic layer 102 can be selectively configured according to the overall design requirements of the actual product. Please refer to Figure 11, which is a schematic diagram of another read / write head device structure provided in this application embodiment. In order to clearly show the differences and connections between this embodiment and the foregoing embodiments, the same functional components or structures are indicated by the same reference numerals in the figure.

[0104] Compared to the read / write head device structure described in Figure 1, the difference in this embodiment is that the air gap δ of the read / write head device structure 100 is formed between the first pole tip 1041 of the first magnetic layer 101 and the second end of the second magnetic layer 102. That is, the second end of the second magnetic layer 102 does not have a small pole tip. Based on the first pole tip 1041, a magnetic field with a relatively high magnetic field strength can still be formed and guided to the magnetic medium material side through the air gap δ.

[0105] The specific implementation of other functional components can be consistent with the scheme described in Figure 1. Further details will not be provided here.

[0106] The following is a brief explanation of the stacking process of the read / write head device structure 100 described in Figure 11, with reference to Figure 12.

[0107] Step S1201: Prepare the substrate layer.

[0108] In a specific implementation, step S1201 can be the same as step S801.

[0109] Step S1202: Prepare the first layer of coil body.

[0110] In a specific implementation, the first coil body 201 and the insulating dielectric layer 1202-1 are stacked sequentially. Here, step S1202 can be the same as step S802.

[0111] Step S1203: Prepare the first magnetically conductive layer.

[0112] In a specific implementation, a first magnetically conductive layer 101 and an insulating dielectric layer 1203-1 are stacked sequentially. Here, step S1203 can be the same as step S803.

[0113] Step S1204: Prepare the connecting coil body.

[0114] In a specific implementation, step S1204 can be the same as step S804.

[0115] Step S1205: Prepare the second layer of coil body.

[0116] In a specific implementation, the second coil body 202 and the insulating dielectric layer 1205-1 are stacked sequentially. Here, step S1205 can be the same as step S805.

[0117] Step S1206: Prepare the magnetic support pillar.

[0118] In a specific implementation, step S1206 can be the same as step S806.

[0119] Step S1207: Prepare the first electrode tip.

[0120] In a specific implementation, the first pole tip 1041 and the pole tip insulating dielectric layer 1207-1 are stacked sequentially. Here, step S1207 can be the same as step S807.

[0121] Step S1208: Prepare the second magnetic layer.

[0122] In a specific implementation, a second magnetically conductive layer 102 and an insulating dielectric layer 1208-1 are stacked sequentially. Here, step S1208 can be the same as step S809.

[0123] To further create a smoother magnetic flux loop, in a specific implementation, the second magnetic conductive layer 102 can be configured as an outwardly protruding arc shape. Please refer to Figures 13 and 14 together, where Figure 13 is a schematic diagram of another read / write head device structure provided by an embodiment of this application, and Figure 14 is a view from direction E in Figure 13. To clearly illustrate the differences and connections between this embodiment and the aforementioned embodiments, components or structures with the same function are indicated by the same reference numerals in the figures.

[0124] Compared with the read / write head device structure described in Figure 1, the difference in this embodiment is that the second magnetic layer 102a is in the shape of an outward-protruding arc, which can improve the local magnetic accumulation and blockage of magnetic induction lines at the first and second ends of the second magnetic layer 102a. That is to say, the magnetic structure of the second magnetic layer 102a connected to the magnetic connection part 103, and the magnetic structure connected to the second pole tip 105, both extend gradually away from the first magnetic layer 101a. This can effectively reduce the magnetic field disturbance generated at the right-angle bend of the magnetic flux loop, and form a smooth magnetic flux loop that can improve the read / write speed, ensuring that a high magnetic field strength is formed at the second pole tip 105. Meanwhile, the projection of the magnetically conductive segment 102a1, which connects the first end of the second magnetically conductive layer 102a to the second pole tip 105, onto the read / write surface S is a gradually tapering shape that decreases towards the second pole tip 105; correspondingly, the projection of the magnetically conductive portion 1042a, which connects the first magnetically conductive layer 101a to the first pole tip 1041, onto the read / write surface S is also a gradually tapering shape that decreases towards the first pole tip 1041. Based on this configuration of the tapering magnetic path, the writing magnetic field strength formed at the pole tip can be further enhanced, providing a good technical guarantee for ensuring the signal quality and accuracy of the read / write head.

[0125] In other possible implementations, the first magnetic layer 01a of the coiled coil 20 can also be designed with an outwardly protruding arc shape (not shown in the figure) to avoid the formation of local magnetic flux accumulation points at its two ends. In comparison, the roughly rectangular first magnetic layer 01a shown in the figure has better stacking fabrication processability.

[0126] For the second magnetically conductive layer 102a, which has an outwardly protruding arc shape, in specific implementation, it is not limited to the dome shape shown in the figure. Its specific shape can be determined according to the overall design requirements of the product, as long as it can avoid the formation of local magnetic flux concentration points at the first and second ends of the second magnetically conductive layer 102a. The embodiments of this application are not limited.

[0127] For the first end 102a1 of the gradually tapering second magnetic layer 102a and the magnetic connection portion 103a of the gradually tapering first magnetic layer 101a, in specific implementations, the tapering shape of both can be designed according to the overall design requirements. For example, in FIG13, the first end 102a1 of the second magnetic layer 102a and the magnetic connection portion 103a of the first magnetic layer 101a both have concave arc-shaped outer contours on both sides.

[0128] In other specific implementations, the outer contours on both sides of the first end 102a1 of the second magnetic layer 102a and the magnetic connection portion 103a of the first magnetic layer 101a can also be inclined surfaces (not shown in the figure) that are set at an angle relative to their respective conductor bodies. This application does not limit the embodiments.

[0129] The specific implementation of other functional components can be consistent with the scheme described in Figure 1. Further details will not be provided here.

[0130] The following is a brief explanation of the stacking process of the read / write head device structure 100 described in Figure 13, with reference to Figure 15.

[0131] Step S1501: Prepare the substrate layer.

[0132] In a specific implementation, step S1501 can be the same as step S801.

[0133] Step S1502: Prepare the first layer of coil body.

[0134] In a specific implementation, the first coil body 201 and the insulating dielectric layer 1502-1 are stacked sequentially. Here, step S1502 can be the same as step S802.

[0135] Step S1503: Prepare the first magnetically conductive layer.

[0136] In a specific implementation, a first magnetically conductive layer 101a and an insulating dielectric layer 1503-1 are stacked sequentially. Here, the first magnetically conductive layer 101a is a rectangular structure portion excluding its first end structure portion, and step S1503 can be consistent with step S803.

[0137] Step S1504: Prepare the connecting coil body.

[0138] In a specific implementation, step S1504 can be the same as step S804.

[0139] Step S1505: Prepare the second layer of coil body.

[0140] In a specific implementation, the second coil body 202 and the insulating dielectric layer 1505-1 are stacked sequentially. Here, step S1505 can be the same as step S805.

[0141] Step S1506: Prepare the magnetic support pillar.

[0142] In a specific implementation, step S1506 can be the same as step S806.

[0143] Step S1507: Prepare the first electrode tip.

[0144] In a specific implementation, the first pole tip 1041 and the pole tip insulating dielectric layer 1507-1 are stacked sequentially. Here, step S1507 can be the same as step S807.

[0145] Step S1508: Prepare the second electrode tip.

[0146] In a specific implementation, the second pole tip 105 and the pole tip insulating dielectric layer 1508-1 are stacked sequentially. Here, step S1508 can be the same as step S808.

[0147] Step S1509: Prepare the second magnetic permeable layer. First, a second magnetic permeable layer 102a with an outwardly protruding arc shape can be prepared by photolithography and deposition processes. Then, an insulating dielectric layer 1509-1 is grown by deposition and polished to form a flat surface.

[0148] Specifically, step S1509 can be the same as step S809.

[0149] To further enhance the magnetic field strength, a flat coil can be added to the aforementioned implementation scheme. Please refer to Figures 16 and 17, where Figure 16 is a schematic diagram of another read / write head device structure provided in this embodiment, and Figure 17 is a cross-sectional view of the FF section in Figure 16. To clearly illustrate the differences and connections between this embodiment and the aforementioned embodiments, components or structures with the same function are indicated by the same reference numerals in the figures.

[0150] Compared to the read / write head device structure described in Figure 1, the difference in this embodiment is that the read / write head device structure 100b further includes a flat coil 60, as shown in Figure 17. The flat coil 60 is wrapped around the magnetically conductive connection portion 103, and part of the coil structure is located between the first magnetically conductive layer 101 and the second magnetically conductive layer 102 of the magnetic passage 10. The flat coil is added to the spirally wound coil 20 to increase the magnetic field strength.

[0151] Referring to Figures 16 and 17, the two flat coils 60 are spaced apart along the extending direction of the magnetic connection portion 103, that is, spaced apart in the direction of structural stacking (third direction Z). In other specific implementations, the specific structure and number of flat coils can be determined according to the overall product design requirements. This application does not limit the specific implementation.

[0152] The specific implementation of other functional components can be consistent with the schemes described in Figure 1, Figure 11, or Figure 13. These will not be elaborated upon here.

[0153] The read / write head device structure described in the foregoing embodiments can be applied to the magnetic heads of different types of magnetic storage devices. Please refer to Figure 18, which is a schematic diagram of a magnetic storage device provided in an embodiment of this application. The magnetic storage device includes a magnetic head 1000, a magnetic storage medium 2000, and a housing 3000. The compatible magnetic head 1000 and magnetic storage medium 2000 are disposed within the housing 3000. The magnetic head 1000 includes the read / write head device structure described in the foregoing embodiments. Based on this read / write head device structure, the magnetic field writing density and read / write efficiency can be effectively improved, meeting the needs of different high-density storage scenarios.

[0154] For example, the magnetic head can be the magnetic head of a magnetic tape storage device, used to cooperate with the magnetic medium on the surface of the magnetic tape to write or read data; as another example, the magnetic head can be the magnetic head of a disk storage device, used to cooperate with the magnetic medium on the surface of the disk to write or read data.

[0155] It should be understood that the other functional components of the aforementioned magnetic head can be implemented using existing technologies, so they will not be elaborated upon in this article.

[0156] The read / write head device structure implementation schemes described in the foregoing embodiments can be widely applied to various electronic devices, including but not limited to servers, switches, and data centers, which have storage devices. Based on the read / write head device structure provided in this application embodiment, the magnetic field writing density and read / write efficiency can be effectively improved, meeting the needs of different high-density storage scenarios.

[0157] For example, this electronic device can be a magnetic tape storage device for data storage fields such as data centers, backup, and archiving, primarily used for processing cold data with infrequent access. The magnetic tape storage device includes a head drive module, a tape drive, a tape library, and a control unit. The head drive module has magnetic heads for performing write and read operations, the tape library stores tape cartridges, and the tape drive, under the command of the control unit, can be used to wind the tape and transfer the tape cartridges. Based on the read / write head device structure provided in this application embodiment, the evolving needs for improving storage efficiency and storage capacity can be met.

[0158] It should be understood that the other functional components of the aforementioned electronic device can be implemented using existing technologies, and therefore will not be elaborated upon here.

[0159] The above are merely preferred embodiments of the present invention. It should be noted that those skilled in the art can make various improvements and modifications without departing from the principle of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.

Claims

1. A read-write head device structure, characterized by comprising: The read / write head device structure includes coils and magnetic pathways stacked on a substrate layer, and the coils and magnetic pathways are embedded in an insulating dielectric layer; The magnetic path includes a first magnetically conductive layer and a second magnetically conductive layer. The first magnetically conductive layer is disposed close to the substrate layer, and the second magnetically conductive layer is located on the side of the first magnetically conductive layer away from the substrate layer. A magnetic head air gap is formed between the first end of the first magnetically conductive layer and the first end of the second magnetically conductive layer. The opening of the magnetic head air gap is located on the read / write surface of the read / write head device structure. The second end of the first magnetically conductive layer and the second end of the second magnetically conductive layer are connected by a magnetically conductive connecting part. The coil is spirally wound around the first magnetic layer or the second magnetic layer, and is wound layer by layer along a first direction extending from the first magnetic layer or the second magnetic layer.

2. The read-write head device structure of claim 1, wherein In the stacking direction, the coil includes a first layer of coil body, a connecting coil body, and a second layer of coil body formed sequentially. A plurality of first layer coil bodies are located on one side of the coiled magnetic conductive layer, and a plurality of second layer coil bodies are located on the other side of the coiled magnetic conductive layer. In the first direction, each first layer coil body and each second layer coil body are arranged sequentially at intervals, and the two ends of the first layer coil body and the second layer coil body are connected by a plurality of connecting coil bodies to form the coil wound layer by layer.

3. A read-write head device structure according to claim 2, wherein The first layer of coils extends along the second direction, the second layer of coils extends in a direction at an angle to the second direction, and the connecting coils extend in the stacking direction; the two ends of each second layer of coils are respectively connected to two adjacent first layer of coils through the connecting coils, the first end of the second layer of coils is connected to the first end of one of the first layer of coils, and the second end of the second layer of coils is connected to the second end of the other first layer of coils. The second direction and the first direction are two directions that intersect in the plane where the substrate layer is located.

4. A read-write head device structure according to any one of claims 1 to 3, characterized in that The coil is spirally wound around the first magnetically conductive layer, and the second magnetically conductive layer is in the shape of an outwardly protruding arc; or, the coil is spirally wound around the second magnetically conductive layer, and the first magnetically conductive layer is in the shape of an outwardly protruding arc.

5. A read-write head device structure according to any one of claims 1 to 4, characterized in that The first end of the first magnetically conductive layer is stepped toward the second magnetically conductive layer, and the first end of the first magnetically conductive layer includes a first pole tip for forming the air gap of the magnetic head. The magnetic cross-section of the first pole tip is smaller than the magnetic cross-section of the body of the first magnetically conductive layer.

6. A read-write head device structure according to claim 5, wherein The first end of the first magnetically conductive layer further includes a magnetically conductive portion, which is connected between the body of the first magnetically conductive layer and the first pole tip.

7. A read-write head device structure according to claim 6, wherein The projection of the magnetic conductive part onto the read / write surface is a gradually tapering shape that decreases towards the first pole tip.

8. A read-write head device structure according to any one of claims 5 to 7, wherein The magnetic induction intensity of the material at the first pole tip is greater than that of the material at other parts of the first magnetic conductive layer.

9. A read-write head device structure according to any one of claims 1 to 8, characterized in that The first end of the second magnetically conductive layer is stepped toward the first magnetically conductive layer, and the first end of the second magnetically conductive layer includes a second pole tip for forming the air gap of the magnetic head. The magnetic cross-section of the second pole tip is smaller than the magnetic cross-section of the body of the second magnetically conductive layer.

10. The read-write head device structure of claim 9, wherein, The projection of the magnetic segment connecting the first end of the second magnetic layer to the second pole tip onto the read / write surface is a gradually tapering shape that decreases towards the second pole tip.

11. A read-write head device structure according to claim 9 or 10, characterised in that The magnetic flux density of the material at the second pole tip is greater than that of the material at other parts of the second magnetic conductive layer.

12. The read-write head device structure according to any one of claims 1 to 11, wherein, The read / write head device structure also includes a ground layer, which is stacked and formed on the magnetic path.

13. A read-write head device structure according to any one of claims 1 to 12, wherein The coils and magnetic pathways stacked on the substrate are arranged in multiple groups and are spaced apart sequentially in the second direction.

14. The read-write head device structure of claim 13, wherein, The two connection ends of each coil are electrically connected to the corresponding external electrode through a first interconnect layer and a second interconnect layer, respectively; in the third direction, the first interconnect layer is stacked on one end of the coil and connected to the first external electrode; the second interconnect layer is stacked on the other end of the coil and connected to the second external electrode.

15. The read-write head device structure of claim 14, wherein, The first external electrode and the second external electrode are located on the same side surface of the read / write head device structure.

16. The read-write head device structure according to any one of claims 1 to 12, wherein The read / write head device structure also includes a flat coil, which surrounds the magnetic connection portion, and a portion of the coil structure of the flat coil is located between the first magnetic layer and the second magnetic layer.

17. The read-write head device structure of claim 16, wherein The flat coils are configured in multiple ways, and the multiple flat coils are spaced apart along the extension direction of the magnetic connection portion.

18. A magnetic head, characterized by The magnetic head includes a read / write head device, which adopts the read / write head device structure according to any one of claims 1 to 17.

19. A magnetic storage device, comprising: The magnetic storage device includes a housing, a magnetic head, and a magnetic storage medium, wherein the magnetic head and the magnetic storage medium are located within the housing, and the magnetic head is the magnetic head as described in claim 18.

20. The magnetic memory apparatus of claim 19, wherein, The magnetic storage medium is a magnetic tape, or the magnetic storage medium is a magnetic disk.

21. An electronic device, comprising: The electronic device includes a magnetic storage device, wherein the magnetic storage device is the magnetic storage device according to claim 19 or 20.

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