Semiconductor laser

Abstract

The present application discloses a semiconductor laser. The semiconductor laser comprises a chip base, a first light-emitting assembly, a second light-emitting assembly, a first beam-combining assembly, a focusing assembly and a ferrule. The first beam-combining assembly is used for combining laser beams emitted by the first light-emitting assembly and the second light-emitting assembly. The focusing assembly is used for focusing the laser beam combined by the first beam-combining assembly and allowing the laser beam to enter the ferrule. The first light-emitting assembly comprises a first light-emitting chip, a first collimation lens, a first slow-axis negative collimation lens, and a first slow-axis positive collimation lens that are sequentially arranged in a second direction. A laser beam emitted by the first light-emitting chip is collimated in a fast-axis direction and a slow-axis direction by means of the first collimation lens, is then re-collimated in the slow-axis direction by means of the first slow-axis negative collimation lens and the first slow-axis positive collimation lens, and enters the first beam-combining assembly. The present application can improve the beam quality of the semiconductor laser.

Description

A semiconductor laser Technical Field

[0001] This application relates to the field of laser technology, specifically to a semiconductor laser. Background Technology

[0002] Semiconductor lasers, with their advantages of small size, high efficiency, and long lifespan, are the primary pump source for fiber lasers and solid-state lasers, and a major component of direct semiconductor lasers. Currently, semiconductor lasers are widely used in laser detection, laser medicine, laser display, 3D printing, and other fields. With the continuous upgrading of market demands, higher requirements are placed on the stability, convenience, controllability, and beam quality of semiconductor lasers. To maintain high beam quality when higher power is required, laser beam combining is essential. Laser beam combining is one of the effective technical approaches to achieving high-power, high-beam-quality semiconductor lasers. It combines multiple unit beams into a single laser beam through geometric or physical optical means. However, the beam quality of semiconductor lasers in existing technologies is relatively poor. Summary of the Invention

[0003] This application provides a semiconductor laser that can improve the beam quality of the semiconductor laser.

[0004] In a first aspect, the semiconductor laser provided in this application includes a chip base, a first light-emitting component, a second light-emitting component, a first beam-combining component, a focusing component, and a ferrule;

[0005] The first light-emitting component and the second light-emitting component are arranged sequentially along a first direction. Both the first light-emitting component and the second light-emitting component are used to emit laser light along a second direction. The first direction is perpendicular to the second direction. The first beam-combining component is used to combine the laser light emitted by the first light-emitting component and the second light-emitting component. The focusing component is used to focus the laser light after it is combined by the first beam-combining component and let it enter the ferrule.

[0006] The first light-emitting component includes a first light-emitting chip, a first collimating lens, a first slow-axis collimating negative lens, and a first slow-axis collimating positive lens arranged sequentially in the second direction. The laser emitted by the first light-emitting chip is collimated in the fast and slow axis directions by the first collimating lens, and then collimated again in the slow axis direction by the first slow-axis collimating negative lens and the first slow-axis collimating positive lens before entering the first beam combining component.

[0007] Optionally, the second light-emitting component includes a second light-emitting chip, a second collimating lens, a second slow-axis collimating negative lens, and a second slow-axis collimating positive lens arranged sequentially in the second direction. The laser emitted by the second light-emitting chip is collimated in the fast and slow axis directions by the second collimating lens, and then collimated again in the slow axis direction by the second slow-axis collimating negative lens and the second slow-axis collimating positive lens before entering the first beam combining component. The first light-emitting component and the second light-emitting component are disposed on the chip base, and the laser emitted by the first light-emitting component and the second light-emitting component is at different heights from the chip base.

[0008] Optionally, the first beam combining component includes a second dichroic mirror and a first dichroic mirror arranged sequentially in the first direction. The second dichroic mirror is used to reflect the laser emitted by the second light-emitting component to the first dichroic mirror. The first dichroic mirror transmits the laser reflected by the second dichroic mirror and reflects the laser emitted by the first light-emitting component, thereby combining the laser beams.

[0009] Optionally, the focusing component includes a focusing lens and an anti-reflection window arranged sequentially in the first direction. The focusing lens is used to focus the laser beam combined by the first beam combining component onto the anti-reflection window. The anti-reflection window transmits the laser beam combined by the first beam combining component and blocks the laser beam from entering the focusing lens in the opposite direction.

[0010] Optionally, the semiconductor laser includes a third light-emitting component, a fourth light-emitting component, and a second beam-combining component. The third and fourth light-emitting components are used to emit lasers of different wavelengths. The first, second, third, and fourth light-emitting components are arranged sequentially along a first direction. The first and second beam-combining components are arranged sequentially along the first direction. The second beam-combining component is used to combine the lasers emitted by the third and fourth light-emitting components and then inject them into the first beam-combining component for secondary beam combining.

[0011] Optionally, the semiconductor laser includes a circuit board disposed on one side of the chip base. The circuit board has an integrated aviation connector and multiple diodes connected to the integrated aviation connector. The diodes are used to control the circuit board. The chip base has multiple thermistors used to detect the temperature of the semiconductor laser.

[0012] Optionally, the semiconductor laser includes a bracket and a locking nut. The bracket is located between the focusing assembly and the locking nut. The locking nut is threadedly connected to the bracket and slidably connected to the insert. The insert can be slidably inserted into or removed from the bracket relative to the locking nut. The bracket and the insert are threadedly connected. A transmitter and a receiver are provided on the side of the bracket near the focusing assembly. The transmitter and the receiver are electrically connected to the circuit board. The transmitter is used to send a signal to the receiver. When the insert is inserted into the bracket and extends into the transmitter and the receiver, it blocks the signal sent by the transmitter to the receiver. The circuit board receives the blocking signal and determines that the insert is inserted in place.

[0013] Optionally, a varistor, a washer, and an assembly are sequentially provided between the bracket and the locking nut. The varistor is electrically connected to the circuit board. When the locking nut rotates closer to the bracket, the varistor is squeezed by the assembly and the washer, and the varistor sends the measured pressure value to the circuit board.

[0014] Optionally, the first light-emitting chip is packaged in a TO package.

[0015] Optionally, the first light-emitting chip has a first heat dissipation ring on its light-emitting side.

[0016] In this application, compared to related technologies, the semiconductor laser includes a chip base, a first light-emitting component, a second light-emitting component, a first beam combiner, a focusing component, and a ferrule. The first and second light-emitting components are arranged sequentially along a first direction, and both are used to emit laser light along a second direction, with the first direction perpendicular to the second direction. The first beam combiner combines the laser light emitted by the first and second light-emitting components, and the focusing component focuses the combined laser light into the ferrule. The first light-emitting component includes a first light-emitting chip, a first collimating lens, a first slow-axis collimating negative lens, and a first slow-axis collimating positive lens arranged sequentially along the second direction. The laser light emitted by the first light-emitting chip is collimated in the fast and slow axis directions by the first collimating lens, and then collimated again in the slow axis direction by the first slow-axis collimating negative lens and the first slow-axis collimating positive lens before entering the first beam combiner. This application can improve the beam quality of the semiconductor laser. Attached Figure Description

[0017] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0018] Figure 1 is a schematic diagram of the overall structure of an embodiment of the semiconductor laser provided in this application;

[0019] Figure 2 is a side view of an embodiment of the semiconductor laser provided in this application.

[0020] Figure 3 is a schematic diagram of the first exploded structure of an embodiment of a semiconductor laser provided in this application;

[0021] Figure 4 is a schematic diagram of the second exploded structure of an embodiment of the semiconductor laser provided in this application;

[0022] Figure 5 is a schematic diagram of the structure of the first light-emitting component and the second light-emitting component in one embodiment of the semiconductor laser provided in this application. Detailed Implementation

[0023] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.

[0024] In the description of this application, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," and "counterclockwise," etc., indicating orientation or positional relationships based on the orientation or positional relationships shown in the accompanying drawings, are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include one or more of the stated features. In the description of this application, "a plurality of" means two or more, unless otherwise explicitly specified.

[0025] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection, an electrical connection, or a connection that allows communication between them; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication between two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0026] Referring to Figures 1-5, the semiconductor laser provided in this application includes a chip base 119, a first light-emitting component 11, a second light-emitting component 12, a first beam combining component 15, a focusing component 16, and a ferrule 191.

[0027] In this embodiment of the application, the first light-emitting component 11 and the second light-emitting component 12 are arranged sequentially along the first direction F1. Both the first light-emitting component 11 and the second light-emitting component 12 are used to emit lasers along the second direction F2. The first direction F1 is perpendicular to the second direction F2. The first beam combining component 15 is used to combine the lasers emitted by the first light-emitting component 11 and the second light-emitting component 12. The focusing component 16 is used to focus the lasers after they are combined by the first beam combining component 15 and let them enter the ferrule 191.

[0028] The first light-emitting component 11 includes a first light-emitting chip 111, a first collimating lens 113, a first slow-axis collimating negative lens 114, and a first slow-axis collimating positive lens 115 arranged sequentially in the second direction F2. The laser emitted by the first light-emitting chip 111 is collimated in the fast and slow axis directions by the first collimating lens 113, and then collimated again in the slow axis direction by the first slow-axis collimating negative lens 114 and the first slow-axis collimating positive lens 115 before entering the first beam combining component 15.

[0029] Due to the waveguide structure of semiconductor lasers, the laser emitted by the chip is typically elliptical, with a large divergence angle in the vertical direction and good beam quality, known as the "fast axis." The horizontal divergence angle is relatively small, resulting in poor beam quality, known as the "slow axis." To achieve good coupling, the beams in both directions need to be collimated separately. The corresponding components are called fast axis collimators (FACs) and slow axis collimators (SACs). After collimation, the beams are combined and then coupled into the optical fiber.

[0030] This application employs a collimation scheme using a first collimating lens 113, a first slow-axis collimating negative lens 114, and a first slow-axis collimating positive lens 115 to shape the fast and slow axes of the output beam. The beam is then focused and coupled into the ferrule 191 to complete the beam output. This further optimizes the slow-axis beam quality and improves the overall beam quality.

[0031] In this embodiment, the first light-emitting chip 111 is packaged in a TO package, and a first heat dissipation ring 112 is provided on the light-emitting side of the first light-emitting chip 111. TO (Transistor Outline) refers to the transistor's shape. Early transistors mostly used coaxial packaging, which was later adopted in optical communication and called TO packaging, i.e., coaxial packaging. Furthermore, the light emitted by the first light-emitting chip 111 is blue. By adding a heat dissipation ring, its heat dissipation capacity is improved, ensuring good power stability when the blue light TO is working.

[0032] In this embodiment, the second light-emitting component 12 includes a second light-emitting chip 121, a second collimating lens 123, a second slow-axis collimating negative lens 124, and a second slow-axis collimating positive lens 125 sequentially arranged in the second direction F2. The laser emitted by the second light-emitting chip 121 is collimated in the fast and slow axis directions by the second collimating lens 123, and then collimated again in the slow axis direction by the second slow-axis collimating negative lens 124 and the second slow-axis collimating positive lens 125 before entering the first beam combining component 15. The first light-emitting component 11 and the second light-emitting component 12 are disposed on the chip base 119, and the laser emitted by the first light-emitting component 11 and the second light-emitting component 12 are at different heights from the chip base 119. Since there is a height difference between the first light-emitting component 11 and the second light-emitting component 12 during assembly, the first beam combining component 15 is used to spatially combine the light beams.

[0033] In this embodiment of the application, the second light-emitting chip 121 is packaged in a TO package, and a second heat dissipation ring 122 is provided on the light-emitting side of the second light-emitting chip 121.

[0034] In this embodiment, the first beam combining component 15 includes a second dichroic mirror 152 and a first dichroic mirror 151 sequentially disposed in the first direction F1. The second dichroic mirror 152 reflects the laser emitted by the second light-emitting component 12 to the first dichroic mirror 151. The first dichroic mirror 151 transmits the laser reflected by the second dichroic mirror 152 and reflects the laser emitted by the first light-emitting component 11, thus combining the laser beams. Specifically, the second dichroic mirror 152 reflects the laser emitted by the second light-emitting component 12 along the second direction F2 into the first dichroic mirror 151 along the first direction F1. The first dichroic mirror 151 transmits the laser reflected by the second dichroic mirror 152 along the first direction F1 back to the first direction F1. The first dichroic mirror 151 also reflects the laser emitted by the first light-emitting component 11 along the second direction F2 back to the first direction F1. The first dichroic mirror 151 combines the laser beam transmitted by the first dichroic mirror 151 along the first direction F1 with the laser beam reflected by the first dichroic mirror 151 along the first direction F1.

[0035] In this embodiment of the application, the focusing component 16 includes a focusing lens 162 and an anti-reflection window 161 arranged sequentially in the first direction F1. The focusing lens 162 is used to focus the laser beam combined by the first beam combining component 15 onto the anti-reflection window 161. The anti-reflection window 161 transmits the laser beam combined by the first beam combining component 15 and blocks the laser beam from entering the focusing lens 162 in the opposite direction.

[0036] In this embodiment, the semiconductor laser includes a third light-emitting component 13, a fourth light-emitting component 14, and a second beam combiner 17. The third light-emitting component 13 and the fourth light-emitting component 14 are used to emit lasers of different wavelengths. The first light-emitting component 11, the second light-emitting component 12, the third light-emitting component 13, and the fourth light-emitting component 14 are arranged sequentially along the first direction F1. The first beam combiner 15 and the second beam combiner 17 are arranged sequentially along the first direction F1. The second beam combiner 17 is used to combine the lasers emitted by the third light-emitting component 13 and the fourth light-emitting component 14 and then inject them into the first beam combiner 15 for secondary beam combining.

[0037] In this embodiment, the third light-emitting component 13 includes a third light-emitting chip 131, a first fast-axis collimating lens 132, and a first slow-axis collimating lens 133 sequentially arranged in the second direction F2. The laser emitted by the third light-emitting chip 131 is collimated in the fast-axis direction by the first fast-axis collimating lens 132, and then collimated in the slow-axis direction by the first slow-axis collimating lens 133. The fourth light-emitting component 14 includes a fourth light-emitting chip 141, a second fast-axis collimating lens 142, and a second slow-axis collimating lens 143 sequentially arranged in the second direction F2. The laser emitted by the fourth light-emitting chip 141 is collimated in the fast-axis direction by the second fast-axis collimating lens 142, and then collimated in the slow-axis direction by the second slow-axis collimating lens 143.

[0038] In this embodiment, the second beam combining component 17 includes a fourth dichroic mirror 172 and a third dichroic mirror 171 sequentially disposed in the first direction F1. The fourth dichroic mirror 172 reflects the laser emitted by the fourth light-emitting component 14 to the third dichroic mirror 171. The third dichroic mirror 171 transmits the laser reflected by the fourth dichroic mirror 172 and reflects the laser emitted by the third light-emitting component 13, thus combining the laser beams. Specifically, the fourth dichroic mirror 172 reflects the laser emitted by the fourth light-emitting component 14 along the second direction F2 to the third dichroic mirror 171 along the first direction F1. The third dichroic mirror 171 transmits the laser reflected by the fourth dichroic mirror 172 along the first direction F1 back to the first direction F1. The third dichroic mirror 171 also reflects the laser emitted by the third light-emitting component 13 along the second direction F2 back to the first direction F1. The third dichroic mirror 171 combines the laser beam transmitted by the third dichroic mirror 171 along the first direction F1 with the laser beam reflected by the third dichroic mirror 171 along the first direction F1.

[0039] Furthermore, the semiconductor laser includes a fifth light-emitting component 144. The second beam combiner 17 includes a reflector 173, a fourth dichroic mirror 172, and a third dichroic mirror 171 sequentially arranged in the first direction F1. The reflector 173 reflects the laser emitted by the fifth light-emitting component 144 to the fourth dichroic mirror 172. The fourth dichroic mirror 172 transmits the laser reflected by the reflector 173. The fourth dichroic mirror 172 reflects the laser emitted by the fourth light-emitting component 144 to the third dichroic mirror 171 and transmits the laser reflected by the reflector 173 to the third dichroic mirror 171, thus performing initial beam combining. The third dichroic mirror 171 transmits the beam combined by the fourth dichroic mirror 172 and reflects the laser emitted by the third light-emitting component 13, thus performing secondary beam combining.

[0040] In this embodiment, the third light-emitting chip 131 and the fourth light-emitting chip 141 are packaged using COS (Chip-on-Submount) packaging. COS packaging can accommodate different output powers.

[0041] Furthermore, the light emitted by the third light-emitting component 13, the fourth light-emitting component 14, and the fifth light-emitting component 144 is red light of different wavelengths.

[0042] In this embodiment, the third light-emitting component 13, the fourth light-emitting component 14, and the fifth light-emitting component 144 emit red light of different wavelengths, respectively, and are packaged in COS form, with the entire assembly sintered onto a detachable module. Fast and slow axis collimation is achieved using fast-axis and slow-axis collimating mirrors. Similarly, the same wavelength COS is spatially combined using a reflector 173, while different wavelengths are combined using a fourth dichroic mirror 172 and a third dichroic mirror 171. The light is then reflected and finally focused and coupled into the ferrule to achieve multi-wavelength beam output.

[0043] In this embodiment, the semiconductor laser includes a circuit board 181 disposed on one side of a chip base 119. The circuit board 181 has an integrated aviation connector 183 and multiple diodes 182 connected to the integrated aviation connector 183. The diodes 182 control the circuit board 181. The chip base 119 has multiple thermistors 184 for detecting the temperature of the semiconductor laser. The thermistors 184 are soldered to the circuit board 181 and contact the laser housing, monitoring the temperature change inside the housing by the resistance change of the circuit board 181.

[0044] In this embodiment, the semiconductor laser includes a bracket 196 and a locking nut 192. The bracket 196 is located between the focusing assembly 16 and the locking nut 192. The locking nut 192 is threadedly connected to the bracket 196 and slidably connected to the insert 191. The insert 191 can be slidably inserted into or removed from the bracket 196 relative to the locking nut 192. The bracket 196 and the insert 191 are threadedly connected. A transmitter 197 and a receiver 198 are provided on the side of the bracket 196 near the focusing assembly 16. The transmitter 197 and the receiver 198 are electrically connected to the circuit board 181. The transmitter 197 is used to send a signal to the receiver 198. When the insert 191 is inserted into the bracket 196 and extends into the transmitter 197 and the receiver 198, it blocks the signal sent by the transmitter 197 to the receiver 198. The circuit board 181 receives the blocking signal and determines that the insert 191 is inserted in place.

[0045] Specifically, transmitter 197 continuously emits light. When insert 191 is fully inserted, it blocks the light from reaching receiver 198, preventing receiver 198 from receiving the signal; this indicates a successful insertion / removal. When insert 191 is not fully inserted, receiver 198 can receive the signal. Circuit board 181 can then switch to an open-circuit signal, preventing the device from powering on normally, thus avoiding burnt-out jumpers and ensuring safe operation.

[0046] In this embodiment, a varistor 195, a washer 194, and an assembly 193 are sequentially arranged between the bracket 196 and the locking nut 192. The varistor 195 is electrically connected to the circuit board 181. When the locking nut 192 rotates closer to the bracket 196, the assembly 193 and the washer 194 compress the varistor 195, and the varistor 195 sends the measured pressure value to the circuit board 181. This application uses the varistor 195 to monitor the locking status of the locking nut 192 during coupling and records the varistor resistance value. Each time the nut is inserted or removed, it is tightened to the same resistance value position to ensure insertion and removal accuracy.

[0047] The semiconductor laser of this application uses spatial beam combining and wavelength beam combining to achieve multi-wavelength output of the semiconductor laser.

[0048] This application uses a surface-mount diode 182 to monitor the output power of each reflector, which can monitor the operation of the semiconductor laser and also achieve precise adjustment of the output power of each band within a small range through the monitoring parameters of the diode 182.

[0049] This application uses a modular approach to install COS, which facilitates repair and maintenance.

[0050] This application uses a circuit board and aviation connector structure to integrate internal electronic components, realizes multi-functional pin design, and reduces complex wiring and pin soldering.

[0051] This application uses a TO metal positioning ring to improve the heat dissipation performance of the TO while compressing the space required for its assembly, thereby further reducing the overall size of the semiconductor laser.

[0052] This application employs monitoring methods such as a varistor 195, a transmitter 197, and a receiver 198 to control the insertion and removal position of the ferrule, thereby reducing insertion and removal losses.

[0053] In this embodiment, the chip base 119 is made of aluminum diamond. Aluminum diamond is a composite material formed by using an aluminum alloy as the matrix and diamond particles as the reinforcement. It has strong similarities to aluminum silicon carbide in terms of performance, but it has significant advantages in thermal conductivity, thermal expansion, and other properties.

[0054] The semiconductor laser provided in this application includes a chip base, a first light-emitting component, a second light-emitting component, a first beam combiner, a focusing component, and a ferrule. The first and second light-emitting components are arranged sequentially along a first direction, and both are used to emit laser light along a second direction, which is perpendicular to the second direction. The first beam combiner combines the laser light emitted by the first and second light-emitting components, and the focusing component focuses the combined laser light into the ferrule. The first light-emitting component includes a first light-emitting chip, a first collimating lens, a first slow-axis collimating negative lens, and a first slow-axis collimating positive lens, arranged sequentially along the second direction. The laser light emitted by the first light-emitting chip is collimated in the fast and slow axis directions by the first collimating lens, and then collimated again in the slow axis direction by the first slow-axis collimating negative lens and the first slow-axis collimating positive lens before entering the first beam combiner. This application can improve the beam quality of the semiconductor laser.

[0055] The semiconductor laser provided in this application has been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of this application. The description of the above embodiments is only for the purpose of helping to understand the method and core ideas of this application. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of this application. Therefore, the content of this specification should not be construed as a limitation of this application.

[0056] It should be noted that when the above embodiments of this application are applied to specific products or technologies, and user-related data is involved, user permission or consent is required, and the collection, use and processing of related data must comply with relevant laws, regulations and standards.

Claims

1. A semiconductor laser, characterized in that, The semiconductor laser includes a chip base, a first light-emitting component, a second light-emitting component, a first beam-combining component, a focusing component, and a ferrule; The first light-emitting component and the second light-emitting component are arranged sequentially along a first direction. Both the first light-emitting component and the second light-emitting component are used to emit laser light along a second direction. The first direction is perpendicular to the second direction. The first beam-combining component is used to combine the laser light emitted by the first light-emitting component and the second light-emitting component. The focusing component is used to focus the laser light after it is combined by the first beam-combining component and let it enter the ferrule. The first light-emitting component includes a first light-emitting chip, a first collimating lens, a first slow-axis collimating negative lens, and a first slow-axis collimating positive lens arranged sequentially in the second direction. The laser emitted by the first light-emitting chip is collimated in the fast and slow axis directions by the first collimating lens, and then collimated again in the slow axis direction by the first slow-axis collimating negative lens and the first slow-axis collimating positive lens before entering the first beam combining component.

2. The semiconductor laser according to claim 1, characterized in that, The second light-emitting component includes a second light-emitting chip, a second collimating lens, a second slow-axis collimating negative lens, and a second slow-axis collimating positive lens arranged sequentially in the second direction. The laser emitted by the second light-emitting chip is collimated in the fast and slow axis directions by the second collimating lens, and then collimated again in the slow axis direction by the second slow-axis collimating negative lens and the second slow-axis collimating positive lens before entering the first beam combining component. The first light-emitting component and the second light-emitting component are disposed on the chip base, and the laser emitted by the first light-emitting component and the second light-emitting component are at different heights from the chip base.

3. The semiconductor laser according to claim 2, characterized in that, The first beam combining component includes a second dichroic mirror and a first dichroic mirror arranged sequentially in the first direction. The second dichroic mirror is used to reflect the laser emitted by the second light-emitting component to the first dichroic mirror. The first dichroic mirror transmits the laser reflected by the second dichroic mirror and reflects the laser emitted by the first light-emitting component, thereby combining the laser beams.

4. The semiconductor laser according to claim 2, characterized in that, The focusing component includes a focusing lens and an anti-reflection window arranged sequentially in the first direction. The focusing lens is used to focus the laser beam combined by the first beam combining component onto the anti-reflection window. The anti-reflection window transmits the laser beam combined by the first beam combining component and blocks the laser beam from being reflected back into the focusing lens.

5. The semiconductor laser according to claim 2, characterized in that, The semiconductor laser includes a third light-emitting component, a fourth light-emitting component, and a second beam-combining component. The third and fourth light-emitting components are used to emit lasers of different wavelengths. The first, second, third, and fourth light-emitting components are arranged sequentially along a first direction. The first and second beam-combining components are also arranged sequentially along the first direction. The second beam-combining component is used to combine the lasers emitted by the third and fourth light-emitting components and then inject them into the first beam-combining component for secondary beam combining.

6. The semiconductor laser according to claim 2, characterized in that, The semiconductor laser includes a circuit board disposed on one side of the chip base. The circuit board has an integrated aviation connector and multiple diodes connected to the integrated aviation connector. The diodes are used to control the circuit board. The chip base has multiple thermistors used to detect the temperature of the semiconductor laser.

7. The semiconductor laser according to claim 6, characterized in that, The semiconductor laser includes a bracket and a locking nut. The bracket is located between the focusing assembly and the locking nut. The locking nut is threadedly connected to the bracket and slidably connected to the insert. The insert can be slidably inserted into or removed from the bracket relative to the locking nut. The bracket and the insert are threadedly connected. A transmitter and a receiver are provided on the side of the bracket near the focusing assembly. The transmitter and the receiver are electrically connected to the circuit board. The transmitter is used to send a signal to the receiver. When the insert is inserted into the bracket and extends into the transmitter and receiver, it blocks the signal sent by the transmitter to the receiver. The circuit board receives the blocking signal and determines that the insert is inserted in place.

8. The semiconductor laser according to claim 7, characterized in that, A varistor, a washer, and an assembly are sequentially arranged between the bracket and the locking nut. The varistor is electrically connected to the circuit board. When the locking nut rotates closer to the bracket, the varistor is squeezed by the assembly and the washer, and the varistor sends the measured pressure value to the circuit board.

9. The semiconductor laser according to claim 1, characterized in that, The first light-emitting chip is packaged using a TO package.

10. The semiconductor laser according to claim 9, characterized in that, The first light-emitting chip has a first heat dissipation ring on its light-emitting side.

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