Ion trap and method for performing a quantum computing process

Abstract

Ion trap and method for performing a quantum computing process An ion trap (1) for performing a quantum computing process is provided, comprising, - a first layer (2), - a second layer (3) arranged above the first layer (2), - a spacer layer (4) arranged between the first layer (2) and the second layer (3), - a set of electrodes (5) arranged on the first layer (2) and / or the second layer (3), the set of electrodes (5) comprising a first group of electrodes, a second group of electrodes and a third group of electrodes, and - a magnetic arrangement (6), wherein - the first group of electrodes defines a processing region (8) with a first trapping axis, - the second group of electrodes defines an auxiliary region (9), - the third group of electrodes defines a shuttling region (10), - the processing region (8) is spaced apart from the auxiliary region (9) by the shuttling region (10), and - the processing region (8) is surrounded by the first layer (2), the spacer layer (4) and the second layer (3) in a cross-section perpendicular to the first trapping axis. Additionally, a method for performing a quantum computing process with the ion trap (1) is provided.

Description

[0001] P2024, 0776 WO N November 6, 2025

[0002] 1

[0003] Description

[0004] Ion trap and method for performing a quantum computing process

[0005] The present disclosure relates to an ion trap and a method for performing a quantum computing process.

[0006] Typically, the coherence time of magnetic field sensitive electronic states of trapped ions, e.g. qubits, is limited. A major factor contributing to the decoherence is a drift of the trapped ions' positions due to varying stray electric fields. Exemplarily, if a magnetic field gradient is provided to the trapped ions, as a result of position drift the trapped ions experience the drift of the ions' resonance frequency, which is essentially the dephasing of the qubits, if the drift is assumed to be random. The drift of the trapped ions is associated with an illumination of the ion trap with electromagnetic laser radiation of a laser, which can be used for qubit state initialization, detection, readout and / or for laser cooling.

[0007] In particular, the electromagnetic laser radiation can impinge on a surface of the ion trap and produce photo-electrons, which can subsequently interact with at least some dielectric surfaces and / or contaminated electrode surfaces, leading to a charging thereof. This charging can cause the stray electric fields, resulting in the drift of the trapped ions' positions.

[0008] An objective to be achieved is to provide an ion trap for increasing the coherence time for qubits and / or reducing a drift of the trapped ions. Furthermore, a method for P2024, 0776 WO N November 6, 2025

[0009] performing a quantum computing process with such an ion trap is to be provided.

[0010] These objectives are achieved by the subject matter of the independent claims. Advantageous embodiments, implementations and further developments are the subject matter of the respective dependent claims.

[0011] An ion trap for performing a quantum computing process is described. In particular, the ion trap is configured to trap at least one ion. The at least one ion is in particular a quantum bit, qubit, being a fundamental unit of information in a quantum computing process. Exemplarily, the ion trap is a processing unit of a quantum computer device.

[0012] According to at least one embodiment, the ion trap comprises a first layer. Exemplarily, the first layer extends in a main extension plane. Lateral directions are oriented parallel to the main extension plane of the first layer. A vertical direction is oriented perpendicular to the main extension plane of the first layer.

[0013] The first layer comprises a top surface, extending parallel to the lateral directions. The top surface is, for example, formed to be flat. " Flat" means here and in the following that the top surface is smooth and has no irregularities. In particular, a root mean square is at most 500 nm, at most 100 nm or at most 50 nm.

[0014] The first layer is, for example, a first substrate of the ion trap. The first layer exemplarily comprises a dielectric material, a semiconductor material, such as silicon, and / or glass. P2024, 0776 WO N November 6, 2025

[0015] - 3 -

[0016] According to at least one embodiment, the ion trap comprises a second layer arranged above the first layer. Exemplarily, the second layer extends in a main extension plane parallel to the lateral directions. The first layer and the second layer are spaced apart in vertical direction. In particular, the first layer and the second layer are stacked above one another in vertical direction. Exemplarily, the first layer and the second layer overlap with one another, in particular congruently, in lateral directions in plan view along the vertical direction.

[0017] The second layer comprises a bottom surface extending parallel to the lateral directions, wherein the bottom surface of the second layer faces the top surface of the first layer. The bottom surface is, for example, formed to be flat. " Flat" means here and in the following that the bottom surface is smooth and has no irregularities. In particular, a root mean square is at most 500 nm, at most 100 nm or at most 50 nm.

[0018] The second layer is, for example, a second substrate of the ion trap. The second layer exemplarily comprises a dielectric material, a semiconductor material such as silicon, and / or glass. Exemplarily, the material of the first layer is equal to or different than the second layer.

[0019] According to at least one embodiment, the ion trap comprises a spacer layer arranged between the first layer and the second layer. Exemplarily, the spacer layer spaces the first layer and the second layer apart from one another in vertical direction. P2024, 0776 WO N November 6, 2025

[0020] 4

[0021] The spacer layer is arranged, for example, in a peripheral region of the first layer, in particular on the top surface thereof. The spacer layer is arranged, for example, in a further peripheral region of the second layer, in particular on the bottom surface thereof. The peripheral region exemplarily surrounds a central region of the first layer. The further peripheral region exemplarily surrounds a further central region of the second layer. The peripheral region and the further peripheral region particularly overlap with one another, in particular congruently, in lateral directions in plan view along the vertical direction. The central region and the further central region particularly overlap with one another, in particular congruently, in lateral directions in plan view along the vertical direction. Particularly, the central region and the further central region are each free of the spacer layer.

[0022] The spacer layer exemplarily comprises a dielectric material, a semiconductor material such as silicon, and / or glass.

[0023] Exemplarily, the material of the spacer layer is equal to or different than the first layer and / or the second layer.

[0024] The thickness in vertical direction of the spacer layer is, for example, at least 10 µm and at most 1000 µm.

[0025] According to at least one embodiment, the ion trap comprises a set of electrodes arranged on the first layer and / or the second layer, the set of electrodes comprising a first group of electrodes, a second group of electrodes and a third group of electrodes. In particular, at least some of the electrodes are arranged on the top surface of the first layer and / or the bottom surface of the second layer. P2024, 0776 WO N November 6, 2025

[0026] 5

[0027] The first group of electrodes is in particular spaced apart in lateral directions from the second group of electrodes and the third group of electrodes. Further, the second group of electrodes is in particular spaced apart in lateral directions from the third group of electrodes.

[0028] The first group of electrodes is in particular spaced apart in lateral directions from the second group of electrodes in lateral directions, for example, by at least 1 mm and at most 50 mm.

[0029] The set of electrodes, particularly each group of electrodes is, for example, configured to confine and / or manipulate the at least one ion in a respective region. Exemplarily, each group of electrodes defines one respective region. This means that each group of electrodes is, for example, assigned to one region. For example, a radio frequency, RF, voltage is applied to at least some electrodes of the set of electrodes, e.g. to a respective group, such that a time-varying electric field is provided in the respective region configured to confine and / or to manipulate the at least one ion. For example, the at least one ion intersects with a trapping axis and / or oscillates around a trapping axis within the respective region.

[0030] It is possible that the respective region comprises at least one quantum register comprising a plurality of ions.

[0031] Therefore, each region is in particular configured to confine at least one ion, exemplarily a plurality of ions.

[0032] Exemplarily, at most 100 ions or at most 60 ions are provided in the respective region. Exemplarily, the confined ions form a corresponding quantum register. P2024, 0776 WO N November 6, 2025

[0033] 6

[0034] According to at least one embodiment, the ion trap comprises a magnetic arrangement. In particular, the magnetic arrangement is configured to establish a magnetic field.

[0035] Exemplarily, the ion trap comprises at least one magnetic arrangement for at least one region. Alternatively, the ion trap comprises at least one magnetic arrangement for at least some of the regions.

[0036] In particular, the magnetic arrangement is configured to establish a magnetic field gradient in the respective region, e.g. along the respective trapping axis. Preferably, the magnetic field of the magnetic arrangement has different magnitudes for different positions in the respective region and in particular for different positions on the respective trapping axis.

[0037] Advantageously, if there is a plurality of ions in the respective region, the resonance frequency of each of the ions on which the magnetic field gradient of the magnet arrangement acts is individual, particularly different, for each ion in the respective region.

[0038] According to at least one embodiment of the ion trap, the first group of electrodes defines a processing region with a first trapping axis. In particular, the magnetic field gradient of the magnetic arrangement is provided to the first trapping axis, exemplarily exclusively to the first trapping axis. The processing region is in particular characteristic of a region where quantum operations, such as logic gates, are performed on the at least one ion.

[0039] It is possible that the ion trap comprises more further first groups of electrodes, each further first group defining a P2024, 0776 WO N November 6, 2025

[0040] further processing region. In this case, the magnetic field gradient of the magnetic arrangement is additionally provided to each further processing region, for example exclusively to the first trapping axis and the further trapping axes. The further processing regions can each have a further first trapping axis, wherein the first trapping axis and at least some of the further first trapping axes can be parallel or oblique to one another. Additionally, at least some of the further first trapping axes can be parallel or oblique to one another.

[0041] According to at least one embodiment of the ion trap, the second group of electrodes defines an auxiliary region. The auxiliary region has a second trapping axis, wherein the second trapping axis is, for example, spaced apart from the first trapping axis. The auxiliary region is in particular characteristic of a region where quantum operations, such as state preparation, and / or measurement, are performed on the at least one ion.

[0042] It is possible that the ion trap comprises more further second groups of electrodes, each further second group defining a further auxiliary region.

[0043] According to at least one embodiment of the ion trap, the third group of electrodes defines a shuttling region. The shuttling region is in particular characteristic of a region where the at least one ion is transported from the auxiliary region to the processing region and vice versa. The shuttling region has a third trapping axis, wherein the third trapping axis connects the first trapping axis with the second trapping axis. The first, the second and the third trapping axis can be linearly aligned. Alternatively, there can be an P2024, 0776 WO N November 6, 2025

[0044] 8

[0045] angle in lateral directions between the first and the second trapping axis, between the first and the third trapping axis and / or between the second and the third trapping axis.

[0046] It is possible that the ion trap comprises more further third groups of electrodes, each further third group defining a further shuttling region.

[0047] According to at least one embodiment of the ion trap, the processing region is spaced apart from the auxiliary region by the shuttling region. In particular, the first group of electrodes is spaced apart in lateral directions from the second group of electrodes by the third group of electrodes.

[0048] According to at least one embodiment of the ion trap, the processing region is surrounded by the first layer, the spacer layer and the second layer in a cross-section perpendicular to the first trapping axis. In particular, the cross-section is defined perpendicular to the main extension plane of the first layer and the second layer, respectively.

[0049] Exemplary, the processing region is completely surrounded by the first layer in the cross-section, the spacer layer and the second layer, including any connection layers between the first layer and the spacer layer and / or the second layer and the spacer layer.

[0050] A cover with an aperture is exemplarily arranged between the processing region and the auxiliary region. The cover has a main extension plane extending perpendicular to the lateral directions and oblique to the first trapping axis, particularly perpendicular to the first trapping axis. The aperture is configured such that the at least one ion is P2024, 0776 WO N November 6, 2025

[0051] 9

[0052] transportable from the processing region and the auxiliary region. Additionally or alternatively, a further cover is arranged on an end region of the processing region facing away from the shuttling region. The further cover has a main extension plane extending perpendicular to the lateral directions and perpendicular to the first trapping axis.

[0053] The cover and / or the further cover can be formed of the same material as the first layer, the second layer and / or the spacer layer.

[0054] This means that the processing region is completely covered by the first layer, the spacer layer and the second layer as well as the cover and / or the further cover, particularly three dimensionally, except for the aperture.

[0055] Advantageously, as the processing region is surrounded by the first layer, the spacer layer and the second layer, this significantly increases the coherence time of magnetic field sensitive ions, particularly provided in the magnetic field gradient, compared to typical processing regions that are not surrounded. During the quantum operations, the ions are surrounded by the respective layers, advantageously having outer conductive surfaces, thus shielding them from any stray electric fields, including laser-induced electric fields.

[0056] As the processing region is spaced apart from the auxiliary region, possible electromagnetic laser radiation is particularly directed only to the auxiliary region, which is separated from the processing region by, for example, a few millimetres. This advantageously significantly reduces the effect of laser-induced varying stray electric fields, and thus the coherence times of the ions can be increased. P2024, 0776 WO N November 6, 2025

[0057] - 10 -

[0058] According to at least one embodiment of the ion trap, an outer surface of the first layer, the spacer layer and / or the second layer is covered by an electrically conductive coating at least regionally. Each outer surface can be covered at least regionally, particularly completely, with the electrically conductive coating. Exemplarily, the outer surface faces away from the processing region. Alternatively or additionally, the outer surface faces the processing region, wherein the electrically conductive coating is at least partly formed of the electrodes of the first group.

[0059] Additionally, outer surfaces facing away from the processing region of the cover and / or the further cover are exemplarily covered by the electrically conductive coating, at least regionally or completely.

[0060] The electrically conductive material is exemplarily connected to a reference potential. Advantageously, charging of the insulating material is reduced due to the electrically conductive material.

[0061] According to at least one embodiment of the ion trap, the auxiliary region is formed of an initialization region and / or detection region. The initialization region is configured to prepare the at least one ion in a well-defined predetermined initial state, exemplarily a ground state. Exemplarily the preparation, i. e. the initialization, is performed with electromagnetic radiation of a laser. The detection region is configured to measure the state of the at least one ion.

[0062] Exemplarily the measurement, i. e. the detection, is performed with electromagnetic radiation of a further laser. P2024, 0776 WO N November 6, 2025

[0063] 11

[0064] Exemplarily, the auxiliary region is also configured to load the at least one ion, particularly trapping the at least one ion, and / or is also configured for cooling the at least one ion. Exemplarily, the cooling is performed with electromagnetic radiation of a cooling laser.

[0065] Advantageously, the at least one ion is shielded from the electromagnetic radiation and the corresponding stray fields by the first layer, the spacer layer and the second layer surrounding the processing region.

[0066] According to at least one embodiment of the ion trap, in top view the spacer layer does not overlap with the processing region, the auxiliary region and the shuttling region in lateral directions. In particular, the spacer layer is arranged spaced apart from the respective trapping axis, e.g. in the peripheral regions.

[0067] According to at least one embodiment of the ion trap, in top view the first layer and the second layer overlap with the processing region, the auxiliary region and the shuttling region in lateral directions.

[0068] According to at least one embodiment of the ion trap, the spacer layer has a through hole for providing access to the auxiliary region. The through hole extends, in particular, completely through the spacer layer in a lateral direction, e.g. perpendicular to the second trapping axis. The through hole advantageously provides optical access to the auxiliary region.

[0069] According to at least one embodiment of the ion trap, the through hole does not overlap with the processing region in P2024, 0776 WO N November 6, 2025

[0070] - 12 -

[0071] lateral directions. Exemplarily, in a side view along a lateral direction perpendicular to the first trapping axis, the through hole does not overlap with the processing region.

[0072] For example, the through hole does not overlap with the shuttling region in lateral directions, particularly in a side view along a lateral direction perpendicular to the third trapping axis. This means that the through hole is provided in the spacer layer such that the through hole overlaps exclusively with the auxiliary region in lateral directions, particularly in a side view along a lateral direction perpendicular to the second trapping axis.

[0073] According to at least one embodiment of the ion trap, the second layer has an opening for providing access to the auxiliary region. The opening extends, in particular, completely through the second layer in vertical direction. The opening advantageously provides further optical access to the auxiliary region.

[0074] According to at least one embodiment of the ion trap, the second layer comprises an integrated photo detector device. The integrated photo detector device is configured to measure the state of the at least one ion. In this embodiment, the second layer does not have the opening.

[0075] " Integrated" means here and in the following that at least one outer surface, particularly all outer surfaces except the outer surface facing the auxiliary region, of the integrated photo detector device is covered by the second layer. P2024, 0776 WO N November 6, 2025

[0076] 13

[0077] According to at least one embodiment of the ion trap, the opening does not overlap with the processing region in lateral directions.

[0078] According to at least one embodiment of the ion trap, the integrated photo detector device does not overlap with the processing region in lateral directions. Exemplarily, in plan view along the vertical direction, the opening or the integrated photo detector device does not overlap with the processing region in lateral directions.

[0079] For example, the opening or the integrated photo detector device does not overlap with the shuttling region in lateral directions, particularly in plan view along the vertical direction. This means that the opening or the integrated photo detector device is provided in the second layer such that the opening or the integrated photo detector device overlaps exclusively with the auxiliary region in lateral directions, particularly in plan view along the vertical direction.

[0080] According to at least one embodiment of the ion trap, the magnetic arrangement comprises at least one permanent magnet and / or at least one electromagnet. The at least one magnetic arrangement is, for example, spaced apart from the processing region in lateral directions and / or in the vertical direction.

[0081] Exemplarily, the permanent magnet does not require an external magnetic field to maintain magnetic properties such as magnetization. Further, the permanent magnet is in particular configured to provide the magnetic field without with the need for an electrical current. Exemplarily, the P2024, 0776 WO N November 6, 2025

[0082] - 14 -

[0083] electromagnet comprises at least one solenoid, which is in particular configured to provide the magnetic field when an electrical current is applied to the solenoid.

[0084] For example, the magnetic arrangement is configured to provide a magnetic field gradient to the processing region, particularly along the first trapping axis, of at least 0.5 T / m or and at most 500 T / m. Exemplarily, the magnetic field gradient in the processing region, particularly along the first trapping axis, is at least 50 T / m and at most 250 T / m, exemplarily 150 T / m.

[0085] According to at least one embodiment of the ion trap, the magnetic arrangement is embedded in the first layer and / or the second layer. " Embedded" means here and in the following that at least one outer surface, particularly all outer surfaces, of the integrated photo detector device is covered by the first layer and / or the second layer.

[0086] According to at least one embodiment of the ion trap, the magnetic arrangement is arranged on the first layer and / or the second layer. For example, the magnetic arrangement can be arranged on the top surface of the first layer or the bottom surface of the first layer. For example, the magnetic arrangement can be arranged on the bottom surface of the second layer or the top surface of the second layer.

[0087] It is possible that a part of the magnetic arrangement is embedded in or arranged on the first layer and another part of the magnetic arrangement is embedded in or arranged on the second layer. Alternatively, the whole magnetic arrangement is embedded in or arranged on the first layer or the whole P2024, 0776 WO N November 6, 2025

[0088] - 15 -

[0089] magnetic arrangement is embedded in or arranged on the second layer.

[0090] According to at least one embodiment, the ion trap comprises a microwave antenna. The microwave antenna is particularly configured to emit a microwave field provided to ions for quantum computation. The microwave field is in particular characteristic of electromagnetic radiation with a frequency of at least 0.1 GHz and at most 500 GHz, in particular at least 0.3 GHz and at most 300 GHz.

[0091] In particular, the quantum operations, such as logic gates, are performed on the at least one ion by the microwave field.

[0092] According to at least one embodiment of the ion trap, the microwave antenna overlaps in lateral directions with the processing region.

[0093] Exemplarily, in plan view along the vertical direction, the microwave antenna overlaps with the processing region in lateral directions. For example, in plan view along the vertical direction, the microwave antenna does not overlap with the shuttling region and / or the auxiliary region in lateral directions.

[0094] According to at least one embodiment of the ion trap, the microwave antenna is embedded in the first layer and / or the second layer. " Embedded" means here and in the following that at least one outer surface, particularly all outer surfaces, of the microwave antenna is covered by the first layer and / or the second layer. P2024, 0776 WO N November 6, 2025

[0095] - 16 -

[0096] According to at least one embodiment of the ion trap, the microwave antenna is arranged on the first layer and / or the second layer. For example, the microwave antenna can be arranged on the top surface of the first layer or the bottom surface of the first layer. For example, the microwave antenna can be arranged on the bottom surface of the second layer or the top surface of the second layer.

[0097] Furthermore, a method for performing a quantum computing process with the ion trap as described herein above is provided. This means that the features concerning the ion trap are also applicable for the method and vice versa.

[0098] According to at least one embodiment of the method, at least one ion is initialized in the auxiliary region.

[0099] According to at least one embodiment of the method, the at least one initialized ion is transported to the processing region via the shuttling region.

[0100] According to at least one embodiment of the method, the at least one initialized ion is manipulated in the processing region. In particular, with the manipulation, the quantum operations are performed.

[0101] According to at least one embodiment of the method, the at least one manipulated ion is transported to the auxiliary region via the shuttling region.

[0102] According to at least one embodiment of the method, a state of the at least one manipulated ion is detected in the auxiliary region. P2024, 0776 WO N November 6, 2025

[0103] According to at least one embodiment of the method, the initializing is performed by providing electromagnetic radiation of a laser to the at least one ion in the auxiliary region.

[0104] According to at least one embodiment of the method, the manipulation is performed by providing a microwave field of a microwave antenna and by providing the magnetic field of the magnetic arrangement to the at least one initialized ion in the processing region.

[0105] According to at least one embodiment of the method, the detection is performed by providing further electromagnetic radiation of a further laser or the laser to the at least one manipulated ion and collecting a fluorescence thereof in the auxiliary region.

[0106] According to at least one embodiment of the method, the electromagnetic radiation of the laser is provided through the through hole.

[0107] According to at least one embodiment of the method, the electromagnetic radiation of the laser is provided through an integrated waveguide.

[0108] According to at least one embodiment of the method, the further electromagnetic radiation of the further laser and / or the fluorescence is provided through the opening.

[0109] In the following, the ion trap and the quantum computing device are explained in more detail with reference to exemplary embodiments and the associated figures. P2024, 0776 WO N November 6, 2025

[0110] Figure 1 shows a schematic view of the ion trap according to an exemplary embodiment.

[0111] Elements that are identical, similar or have the same effect are given the same reference signs in the figures. The figures and the proportions of the elements shown in the figures are not to be regarded as true to scale. Rather, individual elements may be shown exaggeratedly large for better representability and / or for better comprehensibility.

[0112] The ion trap 1 according to the exemplary embodiment of Figure 1 comprises a a first layer 2, a second layer 3 arranged above the first layer 2 and a spacer layer 4 arranged between the first layer 2 and the second layer 3. The first layer 2 and the second layer 3 each have a main extension plane extending parallel to lateral directions. The first layer 2, the spacer layer 4 and the second layer 3 are arranged above one another parallel to a vertical direction, being perpendicular to the lateral directions.

[0113] The first layer 2 is spaced apart from the second layer 3 in vertical direction via the spacer layer 4. The spacer layer 4 is arranged only in a peripheral region of the first layer 2 and a further peripheral region of the second layer 3. Thus, the first layer 2, the second layer 3 and the spacer layer 4 form a cavity in a central region. At least one ion 13 of the ion trap 1 is configured to be present at a respective trapping axis within the cavity.

[0114] The ion trap 1 further comprises a set of electrodes 5 arranged on the first layer 2 and / or the second layer 3, wherein the set of electrodes 5 comprises a first group of electrodes, a second group of electrodes and a third group of P2024, 0776 WO N November 6, 2025

[0115] - 19 -

[0116] electrodes. The first group of electrodes defines a processing region 8 with a first trapping axis, the second group of electrodes defines an auxiliary region 9 with a second trapping axis and the third group of electrodes defines a shuttling region 10 with a third trapping axis. In particular, the respective regions with the respective trapping axes are arranged within the cavity. Further, the processing region 8 is spaced apart from the auxiliary region 9 by the shuttling region 10.

[0117] The spacer layer 4 has a through hole 11 for providing access to the auxiliary region 9 and the second layer 3 has an opening 12 for providing access to the auxiliary region 9. The through hole 11 and the opening 12 exclusively overlap with the auxiliary region 9, at least in part, in particular completely. In contrast, the processing region 8 is surrounded by the first layer 2, the spacer layer 4 and the second layer 3 in a cross-section perpendicular to the first trapping axis, e.g. perpendicular to the lateral direction x. Thus, during quantum operations in the processing region 8, the at least one ion 13 is surrounded by the respective layers, advantageously having conductive surfaces in regions, e.g. provided by the electrodes, thus shielding them from any stray electric fields, including those that are laser-induced.

[0118] Figure 1 particularly shows a view on a cutting plane, which extends through the processing region 8 near the ion 13. In particular, the cutting plane is perpendicular to the first trapping axis.

[0119] A magnetic arrangement 6 and / or a microwave antenna 7 can be embedded in the first layer 2 and / or the second layer 3. P2024, 0776 WO N November 6, 2025

[0120] - 20 -

[0121] Method stage SI according to the exemplary embodiment of Figure 2 comprises an initialization of at least one ion 13 in the auxiliary region 9. After the initialization, the at least one initialized ion 13 is transported to the processing region 8 via the shuttling region 10 in method stage S2. In the processing region 8, the at least one initialized ion 13 is subsequently manipulated in method stage S3. Subsequently, the at least one manipulated ion 13 is transported back to the auxiliary region 9 via the shuttling region 10 in method stage S4, and the state of the at least one manipulated ion 13 is detected in method stage S5 in the auxiliary region 9.

[0122] The invention is not limited to the exemplary embodiments by their description. Rather, the invention encompasses any new feature as well as any combination of features, which in particular includes any combination of features in the claims, even if this feature or combination itself is not explicitly indicated in the claims or exemplary embodiments. P2024,0776 WO N November 6, 2025

[0123] - 21 -

[0124] Reference signs

[0125] 1 ion trap

[0126] 2 first layer

[0127] 3 second layer

[0128] 4 spacer layer

[0129] 5 electrodes

[0130] 6 magnetic arrangement 7 microwave antenna

[0131] 8 processing region

[0132] 9 auxiliary region

[0133] 10 shuttling region

[0134] 11 through hole

[0135] 12 opening

[0136] 13 ion

Claims

P2024, 0776 WO N November 6, 2025- 22 -Claims1. Ion trap (1) for performing a quantum computing process, comprising,- a first layer (2),- a second layer (3 ) arranged above the first layer (2), - a spacer layer (4) arranged between the first layer (2) and the second layer (3 ),- a set of electrodes (5) arranged on the first layer (2) and / or the second layer (3 ), the set of electrodes (5) comprising a first group of electrodes, a second group of electrodes and a third group of electrodes, and- a magnetic arrangement (6), wherein- the first group of electrodes defines a processing region (8) with a first trapping axis,- the second group of electrodes defines an auxiliary region (9 ),- the third group of electrodes defines a shuttling region (10),- the processing region (8) is spaced apart from the auxiliary region (9 ) by the shuttling region (10), and- the processing region (8) is surrounded by the first layer (2), the spacer layer (4) and the second layer (3 ) in a cross-section perpendicular to the first trapping axis.

2. Ion trap (1) according to claim 1, wherein- an outer surface of each the first layer (2), the spacer layer (4) and / or the second layer (3 ) is covered by an electrically conductive coating at least regionally.

3. Ion trap (1) according to any one of claims 1 to 2, whereinP2024, 0776 WO N November 6, 2025- the auxiliary region (9 ) is formed of an initialization and / or detection region.

4. Ion trap (1) according to any one of claims 1 to 3, wherein- in top view the spacer layer (4) does not overlap with the processing region (8), the auxiliary region (9 ) and the shuttling region (10) in lateral directions, and- in top view the first layer (2) and the second layer (3 ) overlap with the processing region (8), the auxiliary region (9 ) and the shuttling region (10) in lateral directions.

5. Ion trap (1) according to any one of claims 1 to 4, wherein- the spacer layer (4) has a through hole (11) for providing access to the auxiliary region (9 ).

6. Ion trap (1) according to claim 5, wherein- the through hole (11) does not overlap with the processing region (8) in lateral directions.

7. Ion trap (1) according to any one of claims 1 to 6, wherein- the second layer (3 ) has an opening (12) for providing access to the auxiliary region (9 ), or- the second layer (3 ) comprises an integrated photo detector device.

8. Ion trap (1) according to claim 7, wherein- the opening (12) does not overlap with the processing region (8) in lateral directions, or- the integrated photo detector device does not overlap with the processing region (8) in lateral directions.P2024, 0776 WO N November 6, 2025- 24 -9. Ion trap (1) according to any one of claims 1 to 8, wherein- the magnetic arrangement (6) comprises at least one permanent magnet and / or at least one electromagnet.

10. Ion trap (1) according to any one of claims 1 to 9, wherein- the magnetic arrangement (6) is embedded in the first layer (2) and / or the second layer (3 ), or- the magnetic arrangement (6) is arranged on the first layer (2) and / or the second layer (3 ).

11. Ion trap (1) according to any one of claims 1 to 10, further comprising- a microwave antenna (7), wherein- the microwave antenna (7) overlaps in lateral directions with the processing region (8).

12. Ion trap (1) according to claim 11, wherein- the microwave antenna (7) is embedded in the first layer (2) and / or the second layer (3 ), or- the microwave antenna (7) is arranged on the first layer (2) and / or the second layer (3 ).

13. Method for performing a quantum computing process with the ion trap (1) according to any one of claims 1 to 12, comprising:- initializing at least one ion (13 ) in the auxiliary region (9 ),- transporting the at least one initialized ion (13 ) to the processing region (8) via the shuttling region (10),P2024, 0776 WO N November 6, 202525- manipulating the at least one initialized ion (13 ) in the processing region (8),- transporting the at least one manipulated ion (13 ) to the auxiliary region (9 ) via the shuttling region (10), and - detecting the state of the at least one manipulated ion (13 ) in the auxiliary region (9 ).

14. Method according to claim 13, wherein- the initializing is performed by providing electromagnetic radiation of a laser to the at least one ion (13 ) in the auxiliary region (9 ),- the manipulation is performed by providing a microwave field of a microwave antenna (7) and by providing the magnetic field of the magnetic arrangement (6) to the at least one initialized ion in the processing region (8), and - the detection is performed by providing further electromagnetic radiation of a further laser or the laser to the at least one manipulated ion (13 ) and collecting a fluorescence thereof in the auxiliary region (9).

15. Method according to claim 14, wherein- the electromagnetic radiation of the laser is provided through the through hole (11) according to claim 5, or- the electromagnetic radiation of the laser is provided through an integrated waveguide.

16. Method according to claim 14 or 15, wherein- the further electromagnetic radiation of the further laser and / or the fluorescence is provided through the opening (12) according to claim 7.

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