Substrate processing method and substrate processing system

Abstract

Provided is a substrate processing method for processing a composite substrate formed by bonding a first substrate, on the surface of which a laminated film is formed, and a second substrate. The substrate processing method comprises: filling a gap between an outer peripheral part of the first substrate and an outer peripheral part of the second substrate with a filler material; and forming a modified region by laser irradiation of the outer peripheral part of the first substrate.

Description

Substrate processing method and substrate processing system

[0001] The present disclosure relates to a substrate processing method and a substrate processing system.

[0002] Patent Document 1 discloses a method for manufacturing a semiconductor device. In this method for manufacturing a semiconductor device, a first semiconductor substrate and a second semiconductor substrate are bonded together to form a laminate. A filler material is embedded in a gap provided between the outer peripheral portion of the first semiconductor substrate and the outer peripheral portion of the second semiconductor substrate. The second semiconductor substrate is thinned.

[0003] Patent Document 2 discloses a method for processing a wafer. In this method for processing a wafer, the front surface side of a first wafer is bonded to a second wafer. The outer peripheral region is irradiated with a laser beam to form a plurality of annular modified layers inside and cracks exposed on the surface side, thereby causing warpage in the outer peripheral region, and the bonding between the first wafer and the second wafer is released by the warpage of the outer peripheral region. The first wafer is polished from the back surface side to be thinned to the finished thickness.

[0004] Japanese Patent Application Laid-Open No. 2022-21688, Japanese Patent Application Laid-Open No. 2024-107934

[0005] The technology according to the present disclosure appropriately thins the first substrate in a polymerized substrate in which the first substrate and the second substrate are bonded.

[0006] One aspect of the present disclosure is a substrate processing method for processing a polymerized substrate in which a first substrate having a laminated film formed on its surface and a second substrate are bonded, including filling a filler material in a gap between the outer peripheral portion of the first substrate and the outer peripheral portion of the second substrate, and irradiating the outer peripheral portion of the first substrate with a laser to form a modified region.

[0007] According to the present disclosure, in a polymerized substrate in which a first substrate and a second substrate are bonded, the first substrate can be appropriately thinned.

[0008] This is an explanatory diagram of the polymerized wafer to be processed. This is an enlarged explanatory diagram of the outer periphery of the polymerized wafer. This is a plan view showing the general configuration of the wafer processing system. This is a side view showing the general configuration of the filling device. This is a side view showing the general configuration of the laser irradiation device. This is a side view showing the general configuration of the edge removal device. This is a side view showing the general configuration of the grinding device. This is an explanatory diagram showing the main steps of wafer processing according to the first embodiment. This is an explanatory diagram showing the formation of a first modified region, a second modified region, and a bonding strength reduction region on the first wafer. This is an explanatory diagram showing the main steps of wafer processing according to the second embodiment. This is an explanatory diagram showing the formation of a first modified region and a bonding strength reduction region on the first wafer in modified example 1. This is an explanatory diagram showing the formation of a first modified region, a second modified region, and a third modified region on the first wafer in modified example 2. This is an explanatory diagram showing the inspection of the filler material in the inspection device.

[0009] Hereinafter, the wafer processing system as a substrate processing system and the wafer processing method as a substrate processing method according to this embodiment will be described with reference to the drawings. In this specification and drawings, elements having substantially the same functional configuration are denoted by the same reference numerals, and redundant explanations will be omitted.

[0010] In the wafer processing system 1 described later according to this embodiment, processing is performed on a polymerized wafer T, which is a polymerized substrate formed by bonding a first wafer W, which is a first substrate, and a second wafer S, which is a second substrate, as shown in Figure 1. Hereinafter, in the first wafer W, the side that is bonded to the second wafer S will be called the surface Wa, and the side opposite to the surface Wa will be called the back surface Wb. Similarly, in the second wafer S, the side that is bonded to the first wafer W will be called the surface Sa, and the side opposite to the surface Sa will be called the back surface Sb.

[0011] The first wafer W is a semiconductor wafer, such as a silicon substrate, and has at least one film laminated on its surface Wa side. Hereinafter, the film formed on this surface Wa side will be referred to as the "first laminated film". In this embodiment, the first laminated film includes a first device layer Dw and a first bonding film Fw. The first device layer Dw includes a plurality of devices. The first bonding film Fw can be an oxide film (THOX film, SiO2 film, TEOS film), a SiC film, a SiCN film, or an adhesive. The first wafer W is bonded to the second wafer S via the first bonding film Fw. The peripheral edge We of the first wafer W is chamfered, and the cross-section of the peripheral edge We is thinner towards its tip. The peripheral edge We is the part that will be removed in the edge trimming described later. In the following description, the region radially inward from the peripheral edge We to be removed on the first wafer W may be referred to as the central portion Wc.

[0012] The second wafer S has a configuration similar to that of the first wafer W, for example. That is, a second device layer Ds and a second bonding film Fs are formed as a second laminated film on the surface Sa side, and the peripheral edge is chamfered. Note that the second wafer S does not have to be a device wafer on which the second device layer Ds is formed; for example, it may be a support wafer that supports the first wafer W. In this case, the second wafer S functions as a protective material that protects the first device layer Dw of the first wafer W.

[0013] In Figure 1, an example is shown where a device layer and a bonding layer are formed as a laminated film on the surfaces of the first wafer W and the second wafer S. However, the type and number of layers of the laminated film are not limited to this. For example, the first laminated film may include a delamination layer, such as a laser absorption layer, between the surface Wa of the first wafer W and the first device layer Dw. The laser absorption layer absorbs laser light, as described later, and causes delamination at the interface between the surface Wa of the first wafer W and the laser absorption layer, or at the interface between the laser absorption layer and the first device layer Dw.

[0014] As shown in Figure 2, an unbonded region A is formed on the outer periphery of the polymerized wafer T where the first bonding film Fw and the second bonding film Fs are not bonded. The unbonded region A includes an outer unbonded region A1, which is the gap between the bevel portion of the first wafer W and the bevel portion of the second wafer S, and an inner unbonded region A2 that extends radially inward from the outer unbonded region A1. The bevel portions of the first wafer W and the second wafer S are chamfered, giving them a so-called roll-off shape, and consequently the gap between these bevel portions becomes the unbonded outer unbonded region A1. The inner unbonded region A2 includes unbonded regions resulting from the shapes of the first bonding film Fw and the second bonding film Fs, as well as unbonded regions resulting when the first bonding film Fw and the second bonding film Fs are not properly bonded, and it exists irregularly. In addition, the inner unbonded region A2 may not exist.

[0015] As shown in Figure 3, the wafer processing system 1 has a configuration in which an loading / unloading station 2 and a processing station 3 are integrally connected. At the loading / unloading station 2, for example, a hoop F capable of accommodating multiple polymerized wafers T is loaded and unloaded to and from the outside. The processing station 3 is equipped with various processing devices for performing desired processing on the polymerized wafers T.

[0016] The loading / unloading station 2 is equipped with a hoop mounting table 10 on which multiple hoops F, for example, three hoops F, are placed. A wafer transport device 20 is also provided on the X-axis positive side of the hoop mounting table 10. The wafer transport device 20 moves along a transport path 21 extending in the Y-axis direction and is configured to transport polymerized wafers T between the hoops F on the hoop mounting table 10 and the transition stage 30, which will be described later.

[0017] The loading / unloading station 2 is equipped with a transition stage 30 on the positive X-axis side of the wafer transport device 20. The transition stage 30 temporarily stores the polymerized wafers T for transfer to and from the processing station 3.

[0018] The processing station 3 is equipped with a wafer transfer device 40, a filling device 50, a heat treatment device 60, a cleaning device 70, an etching device 80, a laser irradiation device 90, a peripheral removal device 100, and a grinding device 110. The wafer transfer device 40 is located on the positive X-axis side of the transition stage 30. The filling device 50, heat treatment device 60, cleaning device 70, and etching device 80 are located on the positive Y-axis side of the wafer transfer device 40. The laser irradiation device 90 and peripheral removal device 100 are located on the negative Y-axis side of the wafer transfer device 40. The grinding device 110 is located on the positive X-axis side of the wafer transfer device 40. Note that the number and arrangement of the filling device 50, heat treatment device 60, cleaning device 70, etching device 80, laser irradiation device 90, peripheral removal device 100, and grinding device 110 are not limited to this embodiment and can be determined arbitrarily.

[0019] The wafer transport device 40 is configured to move freely along a transport path 41 extending in the X-axis direction, and is capable of transporting polymerized wafers T to the transition stage 30, filling device 50, heat treatment device 60, cleaning device 70, etching device 80, laser irradiation device 90, edge removal device 100, and grinding device 110.

[0020] The filling device 50 fills the gap between the outer periphery of the first wafer W and the outer periphery of the second wafer S with filler material G (see Figure 8(b)). The configuration of the filling device 50 is arbitrary. As an example, as shown in Figure 4, the filling device 50 has a chuck 51 as a holding part for holding the polymerized wafer T, a rotating mechanism (rotor) 52 for rotating the chuck 51 around a vertical axis, and an injector 53 for injecting filler material G into the gap between the outer periphery of the wafers W and S held by the chuck 51. In the filling device 50, while rotating the chuck 51 holding the polymerized wafer T, filler material G is injected from the injector 53 into the gap between the outer periphery of the wafers W and S. As a result, filler material G is injected into the gap between the outer periphery of wafers W and S around the entire circumference of the polymerized wafer T, and the unbonded region A in the gap between the outer periphery of wafers W and S is filled with filler material G. Note that a nozzle for filling the filler material G may be used instead of the injector 53.

[0021] The material of the filler G is arbitrary, but it is necessary to fill the unjointed region A with the filler G up to the inner circumferential edge of the inner unjointed region A2. For example, a fluid liquid glass-based material can be used as such filler G.

[0022] The heat treatment apparatus 60 heats the filler material G filled in the unjoined region A to a desired temperature and bakes the filler material G. In this embodiment, the filler material G is baked in two stages, as will be described later. For example, the filler material G is baked at a first temperature to partially harden it, and then the filler material G is baked at a second temperature higher than the first temperature to completely harden it.

[0023] The method for curing the filler G is appropriately selected depending on the material of the filler G. For example, the filler G may be dried. Alternatively, if the filler G is cured by light, for example ultraviolet light, a light irradiation device is provided instead of the heat treatment device 60. The filler G is then irradiated with light using the light irradiation device to cure it.

[0024] The cleaning apparatus 70 performs a cleaning process on the first wafer W and the second wafer S after the filler material G has been filled into the unbonded region A in the filling apparatus 50, or after the filler material G has been fired in the heat treatment apparatus 60, to remove particles on these wafers W and S, and filler material G that has adhered to unnecessary areas. The cleaning method can be arbitrarily selected. For example, the filler material G may be removed by supplying an organic solvent to the filler material G, or the filler material G may be removed by an abrasive film.

[0025] Furthermore, the cleaning device 70 performs a cleaning process on the first wafer W and the second wafer S after grinding by the grinding device 110 to remove particles from these wafers W and S. The method for cleaning these first wafer W and second wafer S can be arbitrarily selected.

[0026] In this embodiment, a single cleaning apparatus 70 performs cleaning of the first wafer W and second wafer S after filling with filler G, and cleaning of the first wafer W and second wafer S after grinding. However, these cleaning processes may be performed by separate cleaning apparatuses.

[0027] The etching apparatus 80 etches the back surface Wb of the first wafer W after grinding by the grinding apparatus 110. The etching method can be arbitrarily selected, but for example, wet etching is used.

[0028] The laser irradiation device 90 pulses laser light L (modifying laser light, such as a YAG laser or fiber laser) into the interior of the outer periphery of the first wafer W (see Figure 8(c)). This laser light L forms a first modified area M1 and a second modified area M2, and forms a first modified region N1 and a second modified region N2. The laser irradiation device 90 also has a control device 120, which will be described later.

[0029] The configuration of the laser irradiation device 90 is arbitrary. As an example, as shown in Figure 5, the laser irradiation device 90 has a chuck 91 as a holding part for holding the polymerized wafer T, a rotation mechanism (rotor) 92 for rotating the chuck 91 around a vertical axis, a moving mechanism (transporter) 93 for moving the chuck 91 horizontally on a base 94, and a laser irradiation unit 95 for irradiating the first wafer W held by the chuck 91 with laser light L. The laser irradiation unit 95 has a laser head 96 that emits the laser light L in a pulsed manner, an optical system 97 for controlling the laser light L, and a lens 98 for irradiating the laser light L. The lens 98 is configured to be able to move up and down vertically by a lifting mechanism (actuator) 99.

[0030] The edge removal device 100 removes the peripheral portion We of the first wafer W, i.e., edge trims, using the first modified region N1, the second modified region N2, and the bonding force reduction region R as starting points (see Figure 8(d)). The edge trimming method can be arbitrarily selected. As an example, as shown in Figure 6, the edge removal device 100 has a chuck 101 as a holding part for holding the polymerized wafer T, a rotating mechanism (rotor) 102 for rotating the chuck 101 around a vertical axis, and a blade 103, for example, a wedge shape, as a peripheral removal part (remover). In the edge removal device 100, the blade 103 is inserted into the polymerized wafer T while rotating the chuck 51 holding the polymerized wafer T, and the peripheral portion We is removed. Furthermore, the peripheral removal device 100 may, for example, apply an impact to the peripheral portion We by spraying an air blow or water jet toward the peripheral portion We, or by applying a material to the peripheral portion We from the back surface of the first wafer W. Additionally, for example, adhesive tape may be attached to the back surface of the first wafer W and the adhesive tape may be expanded.

[0031] The grinding apparatus 110 thins the first wafer W by grinding the back surface Wb of the first wafer W. The configuration of the grinding apparatus 110 is arbitrary. As an example, as shown in Figure 7, the grinding apparatus 110 has a chuck 111 as a holding part for holding the polymerized wafer T, a rotating mechanism (rotor) 112 for rotating the chuck 111 around a vertical axis, and a grinding unit 113 for grinding the back surface Wb of the first wafer W held by the chuck 111. The grinding unit 113 is equipped with an annular, rotatable grinding wheel 114, and is configured to be rotatable and vertically movable. In the grinding apparatus 110, the back surface Wb of the first wafer W held by the chuck 111 is ground by rotating the chuck 111 and the grinding wheel 114 respectively while the back surface Wb of the first wafer W is in contact with the grinding wheel 114. In addition, multiple grinding units 113 may be provided, and the back surface Wb of the first wafer W may be ground in stages to thin it.

[0032] As shown in Figure 1, the wafer processing system 1 is equipped with a control device 120 and at least one control device 130. The control device 120 individually controls the operation of the laser irradiation device 90. The control device 130 oversees the control of a series of wafer processing operations in the wafer processing system 1.

[0033] Control devices 120 and 130 each process computer-executable instructions causing the laser irradiation device 90 and the wafer processing system 1 to perform the various processes described herein. Control devices 120 and 130 may each be configured to control the elements of the laser irradiation device 90 and the wafer processing system 1 to perform the various processes described herein. In one embodiment, part or all of control device 120 may be included in the laser irradiation device 90, and part or all of control device 130 may be included in the wafer processing system 1.

[0034] Control devices 120 and 130 may each include a processing unit, a storage unit, and a communication interface. Control devices 120 and 130 may each be implemented by, for example, a computer. The processing unit may be configured to read a program from the storage unit that provides logic or routines that enable various control operations, and to perform various control operations by executing the read program. This program may be stored in the storage unit in advance, or it may be obtained via a medium when needed. The obtained program is stored in the storage unit and read from the storage unit and executed by the processing unit. The medium may be various storage media readable by a computer, or it may be a communication line connected to the communication interface. The storage medium may be temporary or permanent. The processing unit may be a CPU (Central Processing Unit), or it may be one or more circuits. The storage unit may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface may communicate between the laser irradiation device 90 and the wafer processing system 1 via a communication line such as a LAN (Local Area Network).

[0035] In this embodiment, the control device 120 is installed separately from the laser irradiation device 90, but the control device 120 may be configured as an integral part of the control device 130. In other words, the operation of the laser irradiation device 90 may be controlled by the control device 130.

[0036] Next, two embodiments (the first and second embodiments) of wafer processing performed using the wafer processing system 1 configured as described above will be explained. In these first and second embodiments, the first wafer W and the second wafer S are bonded together to form a polymerized wafer T in advance.

[0037] First, the wafer processing according to the first embodiment will be described. In the wafer processing according to the first embodiment, after bevel filling is performed to fill the unbonded region A with filler material G, laser edge trim is performed to remove the peripheral portion We by laser irradiation, and then the back surface Wb of the first wafer W is ground.

[0038] In the first embodiment, first, a hoop F containing multiple polymerized wafers T is placed on the hoop mounting table 10 of the loading / unloading station 2. As shown in Figure 8(a), the polymerized wafers T have unbonded regions A as shown in Figure 2.

[0039] Next, the polymerized wafer T is removed from the hoop F by the wafer transport device 20 and transported to the transition stage 30. Subsequently, the polymerized wafer T is transported to the filling device 50 by the wafer transport device 40. In the filling device 50, as shown in Figure 8(b), the filler material G is filled from the injector 53 into the unbonded region A in the gap around the outer periphery of the wafers W and S. At this time, the filler material G is filled up to the inner edge of the inner unbonded region A2.

[0040] Next, the polymerized wafer T is transported to the heat treatment apparatus 60 by the wafer transport device 40. In the heat treatment apparatus 60, the polymerized wafer T is heat-treated at a first temperature, for example, 150°C. Then, the filler material G is fired and partially hardened.

[0041] Next, the polymerized wafer T is transported to the cleaning device 70 by the wafer transport device 40. In the cleaning device 70, the first wafer W and the second wafer S are cleaned. Then, particles and filler material G attached to unnecessary areas on these wafers W and S are removed.

[0042] Next, the polymerized wafer T is transported to the heat treatment apparatus 60 by the wafer transport device 40. In the heat treatment apparatus 60, the polymerized wafer T is heat-treated at a second temperature higher than the first temperature, for example, 300°C. Then, the filler material G is fired to completely harden the filler material G.

[0043] Next, the polymerized wafer T is conveyed to the laser irradiation device 90 by the wafer transfer device 40. In the laser irradiation device 90, as shown in FIGS. 8(c) and 9, laser light L is irradiated inside the outer peripheral portion of the first wafer W to form a modified region that is the basis for removing the peripheral edge portion We. In the present embodiment, a first modified region N1 and a second modified region N2 are formed as the modified regions.

[0044] First, as shown in FIG. 9(a), in the first wafer W, laser light L is irradiated to a plurality of irradiation points arranged in the thickness direction (vertical direction) of the first wafer W, radially outside the inner circumference of the peripheral edge portion We to be removed, and radially outside the inner circumference end of the unbonded region A (inner unbonded region A2). The plurality of irradiation points being arranged in the thickness direction is defined as the arrangement direction of the plurality of irradiation points including a thickness direction component. For example, it includes cases where the plurality of irradiation points are arranged perpendicular to the surface Wa as in the illustrated example, or cases where the plurality of irradiation points are arranged in a direction inclined from the thickness direction to the horizontal direction. That is, the first modified region N1 described later may extend in the vertical direction or may be arranged in a direction inclined from the thickness direction to the horizontal direction.

[0045] The irradiation points irradiated with the laser light L are modified, and the first modified portions M1 that are laser marks are formed. When a plurality of first modified portions M1 are formed, a first crack C1 extends in the direction in which these first modified portions M1 are arranged. The first crack C1 extends so as to connect between adjacent first modified portions M1. Then, a first modified region N1 including the first modified portions M1 and the first crack C1 is formed. Note that the lowermost first modified portion M1 is preferably formed above the bottom surface modified region N21 described later. In such a case, it is possible to suppress the lower end of the first crack C1 from extending below the second bonding film Fs. Further, the laser light L is irradiated to the entire circumference of the first wafer W, and the first modified region N1 is formed over the entire circumference.

[0046] The upper end of the first crack C1 does not reach the back surface Wb of the first wafer W. The lower end of the first crack C1 reaches the interface between the first bonding film Fw (or the inner unbonded region A2) and the second bonding film Fs. When forming the first modified region N1, the irradiation conditions such as the output and interval of the laser light L are controlled so that the first crack C1 extends in this manner.

[0047] Next, as shown in FIG. 9(b), laser light L is irradiated to a plurality of irradiation points arranged in the thickness direction of the first wafer W radially inward of the first modification region N1 along the inner circumference of the peripheral edge We of the first wafer W to be removed, and laser light L is irradiated to a plurality of irradiation points arranged in the plane direction of the first wafer W. Specifically, the laser light L is irradiated along the side surface of the peripheral edge We (a direction inclined from the thickness direction to the horizontal direction), and further the laser light L is irradiated along the bottom surface of the peripheral edge We (substantially horizontal direction).

[0048] The irradiation points irradiated with the laser light L are modified, and the second modification part M2 which is a laser mark is formed. The second modification part M2 formed along the side surface of the peripheral edge We constitutes a side surface modification region N22 described later, and the second modification part M2 formed along the bottom surface of the peripheral edge We constitutes a bottom surface modification region N21 described later. Further, the laser light L is irradiated to the entire circumference of the first wafer W to form a second modification region N2 described later.

[0049] When a plurality of second modification parts M2 are formed, as shown in FIG. 9(c), a second crack C2 extends in the direction in which the second modification parts M2 are arranged. The second crack C2 extends so as to connect between adjacent second modification parts M2. In such a case, the second crack C2 extends from the second modification part M2 along the bottom surface of the peripheral edge We, and a bottom surface modification region N21 including the second modification part M2 and the second crack C2 is formed. The radially outer end of this second crack is connected to the first modification region N1. Further, the second crack C2 connects the second modification part M2 along the side surface of the peripheral edge We from the radially inner end, extends along the side surface of the peripheral edge We, and reaches the back surface Wb of the first wafer W. Then, a side surface modification region N22 including the second modification part M2 and the second crack C2 along the side surface of the peripheral edge We is formed. These bottom surface modification region N21 and side surface modification region N22 constitute the second modification region N2.

[0050] In this way, one end of the second crack C2 reaches the back surface Wb of the first wafer W, and the other end connects to the first modified region N1. When the second crack C2 connects to the first modified region N1, the pressure in the second crack C2 is released. As a result, a tensile stress H acts upward at the interface between the first bonded film Fw (or the inner unbonded region A2) and the second bonded film Fs, which is radially outward from the first modified region N1 (arrow in Figure 9(c)). This tensile stress H forms a bonding force reduction region R at the interface between the first bonded film Fw (or the inner unbonded region A2) and the second bonded film Fs. The bonding force reduction region R is a state in which the bonding force between the first bonded film Fw (or the inner unbonded region A2) and the second bonded film Fs is reduced, and also includes the state in which the first bonded film Fw (or the inner unbonded region A2) and the second bonded film Fs are delaminated.

[0051] The bonding force reduction region R may be formed between the surface Wa of the first wafer W and the first bonding film Fw, or, for example, if the first laminated film includes a delamination layer as described above, it may be formed between the surface Wa of the first wafer W and the delamination layer. The location of the bonding force reduction region R depends on the bonding force between adjacent films (interlayers).

[0052] Furthermore, in this embodiment, the first modified portion M1 (first modified region N1) was formed first, followed by the second modified portion M2. However, the order in which the first modified portion M1 and the second modified portion M2 are formed is not limited to this. For example, the second modified portion M2 may be formed first, followed by the first modified portion M1.

[0053] Next, the polymerized wafer T is transported to the edge removal device 100 by the wafer transport device 40. In the edge removal device 100, as shown in Figure 8(d), the edge portion We is removed by the edge removal unit (remover). For example, a blade 103 is inserted between the first wafer W and the second wafer S, and the edge portion We is removed from the first wafer W. The insertion position of the blade 103 is arbitrary, but for example, it is inserted so as to abut the bevel portion of the first wafer W. The edge portion We is then peeled off and removed from the central portion Wc of the first wafer W, with the first modified region N1, the second modified region N2, and the bonding force reduction region R as the starting points.

[0054] When the peripheral portion We is removed, the first laminated film (first bonding film Fw) located on the underside of the peripheral portion We is also removed. Therefore, as will be described later, the first laminated film does not remain above the grinding target surface P when grinding the back surface Wb of the first wafer W.

[0055] The filler material G may be removed along with the peripheral edge We, or it may remain on the second wafer S. If the filler material G remains on the second wafer S, the remaining filler material G may be removed after grinding the back surface Wb of the first wafer W with the grinding device 110, as described later.

[0056] Next, the polymerized wafer T is transported to the grinding apparatus 110 by the wafer transport device 40. In the grinding apparatus 110, as shown in Figure 8(e), the back surface Wb of the first wafer W is ground. The first wafer W is then thinned to the desired thickness.

[0057] Next, the polymerized wafer T is transported to the cleaning device 70 by the wafer transport device 40. In the cleaning device 70, the first wafer W and the second wafer S are cleaned.

[0058] Next, the polymerized wafer T is transported to the etching apparatus 80 by the wafer transport device 40. In the etching apparatus 80, the back surface Wb of the first wafer W is etched and the back surface Wb is flattened.

[0059] Subsequently, the polymerized wafer T, after all processing has been completed, is transported to the transition stage 30 by the wafer transport device 40, and then to the hoop F of the hoop mounting table 10 by the wafer transport device 20. In this way, the series of wafer processing in the wafer processing system 1 is completed.

[0060] Here, since the periphery of the first wafer is chamfered, grinding the back surface of the first wafer will result in a sharp, pointed shape (a so-called knife-edge shape) at the periphery of the first wafer. This can cause chipping at the periphery of the first wafer, potentially damaging it.

[0061] Therefore, various measures have been proposed to suppress chipping at the peripheral edge of the first wafer. For example, as disclosed in Patent Document 1 mentioned above, it has been proposed to embed a filler material in the outer periphery of the first wafer and the outer periphery of the second wafer. However, if the first laminated film (including the first bonding film and the first device layer) of the first wafer is located above the grinding target surface of the first wafer, when grinding the back surface of the first wafer, the grinding wheel will grind the back surface of the first wafer as well as the first laminated film. In such cases, the grinding wheel may become clogged with the first laminated film, and the back surface of the first wafer may not be able to be properly ground.

[0062] Furthermore, as disclosed in Patent Document 2 mentioned above, it has been proposed to irradiate the outer peripheral region of the first wafer with laser light to form multiple modified layers and cracks inside, thereby causing warping in the outer peripheral region and releasing the bond between the first wafer and the second wafer due to the warping of the outer peripheral region. However, since the above-mentioned outer peripheral region is the region that releases the bond between the first wafer and the second wafer, its radial width becomes large. If the peripheral edge (outer peripheral region) of the first wafer is removed while grinding the back surface of the first wafer in this state, the first wafer may become detached from the second wafer, and chipping may occur.

[0063] In contrast, according to this first embodiment, after bevel filling is performed by filling the unbonded region A with filler G as shown in Figure 8(b), laser edge trimming is performed to remove the peripheral portion We by laser irradiation as shown in Figures 8(c) and (d). As a result, the first laminated film (first device layer Dw and first bonding film Fw) of the first wafer W does not remain above the grinding target surface P, so when grinding the back surface Wb of the first wafer W as shown in Figure 8(e), the grinding wheel 114 does not grind the first laminated film. As a result, the grinding wheel 114 does not become clogged by the first laminated film as in the conventional method, and the back surface Wb of the first wafer W can be properly ground. This makes it possible to properly thin the first wafer W.

[0064] Furthermore, according to this first embodiment, even after the peripheral portion We is removed as shown in Figure 8(d), the unbonded region A is filled with the filler material G, so when grinding the back surface Wb of the first wafer W as shown in Figure 8(e), the occurrence of chipping can be suppressed. In addition, the occurrence of chipping after grinding the back surface Wb can also be suppressed.

[0065] For example, if a filler material is not filled in an unjointed region, and a modified region is formed radially inside the unjointed region, chipping will occur during backside grinding of the first wafer. In this first embodiment, as shown in Figure 8(b), a filler material G is filled into the unjointed region A, so as shown in Figure 8(c), the first modified region N1 can be formed such that its outer peripheral edge is located radially outside the inner peripheral edge of the unjointed region A (inner unjointed region A2). In other words, the radial range of the peripheral edge We to be removed can be reduced. As a result, the usable range (grinding area) of the first wafer W can be increased while suppressing chipping during grinding of the backside Wb.

[0066] Furthermore, according to this first embodiment, as shown in Figure 8(d), the peripheral portion We is removed using the first modified region N1, the second modified region N2, and the bonding strength reduction region R as starting points, so the trim line of the peripheral portion We can be stabilized. Therefore, the peripheral portion We can be removed appropriately.

[0067] In the first embodiment described above, the peripheral portion We was removed by the peripheral removal device 100, and then the back surface Wb of the first wafer W was ground with the grinding device 110. However, the peripheral portion We may be removed while grinding the back surface Wb with the grinding device 110. In this case, a modified region is formed so that the peripheral portion We is removed before the grinding wheel 114 contacts the first laminated film of the first wafer W. Note that the formation of the modified region is not limited to this embodiment. Also, in this example, the peripheral removal device 100 may be omitted.

[0068] Next, the wafer processing according to the second embodiment will be described. The order of laser edge trimming and bevel filling differs between the second embodiment and the first embodiment. That is, in the wafer processing according to the second embodiment, laser edge trimming is performed to remove the peripheral portion We by laser irradiation, then bevel filling is performed to fill the unbonded region A with filler material G, and then grinding is performed on the back surface Wb of the first wafer W.

[0069] In the second embodiment, as in the first embodiment, the polymerized wafer T has an unbonded region A as shown in Figure 2, as shown in Figure 10(a).

[0070] Next, in the laser irradiation device 90, as shown in Figure 10(b), laser light L is irradiated into the interior of the outer periphery of the first wafer W to form a first modified region N1 and a second modified region N2. The first modified region N1 is formed radially outward from the inner periphery end of the unbonded region A (inner unbonded region A2). At this time, a bonding force reduction region R (not shown) is also formed at the interface between the first bonding film Fw (or inner unbonded region A2) and the second bonding film Fs. The method for forming the first modified region N1, the second modified region N2, and the bonding force reduction region R is the same as in the first embodiment shown in Figure 8(c).

[0071] Next, in the peripheral removal device 100, as shown in Figure 10(c), the peripheral portion We is removed using the first modified region N1, the second modified region N2, and the bonding strength reduction region R as starting points. At this time, the first laminated film (first bonding film Fw) on the lower surface side of the peripheral portion We is also removed, so that the first laminated film does not remain above the grinding target surface P when grinding the back surface Wb of the wafer W. The method for removing the peripheral portion We is the same as in the first embodiment shown in Figure 8(d).

[0072] Next, in the filling device 50, as shown in Figure 10(d), the filler material G is filled from the injector 53 into the unjointed region A, specifically into the inner unjointed region A2. At this time, the filler material G is filled up to the inner circumferential edge of the inner unjointed region A2. The method of filling with the filler material G is the same as in the first embodiment shown in Figure 8(b). However, in this second embodiment, since the peripheral portion We is removed, the filler material G may be injected from the side or from above.

[0073] Next, in the heat treatment apparatus 60, the polymerized wafer T is heat-treated at a first temperature, and the filler material G is fired to partially harden it. After that, the first wafer W and the second wafer S are washed in the washing apparatus 70. Then, in the heat treatment apparatus 60, the polymerized wafer T is heat-treated at a second temperature, and the filler material G is fired to completely harden it. The firing method for the filler material G and the washing method for the first wafer W and the second wafer S are the same as in the first embodiment.

[0074] Next, in the grinding apparatus 110, the back surface Wb of the first wafer W is ground, as shown in Figure 10(e). The first wafer W is then thinned to the desired thickness. The grinding method for the back surface Wb is the same as in the first embodiment shown in Figure 8(e).

[0075] Next, the first wafer W and the second wafer S are cleaned in the cleaning apparatus 70. Then, the back surface Wb of the first wafer W is etched in the etching apparatus 80 to flatten the back surface Wb. The cleaning method for the first wafer W and the second wafer S and the etching method for the back surface Wb are the same as in the first embodiment.

[0076] In the second embodiment described above, the same effects as in the first embodiment can be enjoyed. That is, when the peripheral portion We is removed, the first laminated film of the first wafer W does not remain above the grinding target surface P, so when grinding the back surface Wb of the first wafer W as shown in Figure 10(e), the grinding wheel does not grind the first laminated film. The back surface Wb can be ground appropriately. In addition, since the filler G is filled into the unbonded region A, chipping during grinding can be suppressed, and the outer peripheral edge of the first modified region N1 can be positioned radially outward from the inner peripheral edge of the unbonded region A (inner unbonded region A2). As a result, the usable range of the first wafer W can be increased.

[0077] In the embodiments described above, a first modified region N1 and a second modified region N2 were formed in the laser irradiation device 90 as shown in Figure 9, but the method of forming the modified regions is not limited thereto. Below, modified example 1 shown in Figure 11 and modified example 2 shown in Figure 12 will be described.

[0078] First, let's describe Modification 1. In Modification 1, as shown in Figure 11, a laser beam L is irradiated into the outer periphery of the first wafer W to form a first modified region N1 and a second modified region M2.

[0079] First, as shown in Figure 11(a), laser light L is irradiated horizontally into the interior of the first wafer W, at least radially outward from the first modified region N1 (first modified portion M1 and first crack C1) described later, i.e., at the peripheral portion We. In this case, the laser light L may be irradiated from the radially outward to the inward, or from the radially inward to the outward.

[0080] The irradiation point where the laser beam L is irradiated is modified, and a second modified area M2, which is a laser trace, is formed. The second modified area M2 is formed near the surface Wa of the first wafer W. Specifically, the distance in the thickness direction between the second modified area M2 and the surface Wa is, for example, within 20 μm. The laser beam L is irradiated around the entire circumference of the first wafer W, and the second modified area M2 is formed around the entire circumference.

[0081] Furthermore, adjacent second modified sections M2 are not connected to each other. That is, cracks originating from a second modified section M2 do not reach adjacent second modified sections M2. In order to prevent the second modified sections M2 from connecting to each other in this way, irradiation conditions such as the output and spacing of the laser beam L irradiated into the interior of the first wafer W are controlled. The lower limit of the spacing of the laser beam L, i.e., the spacing of the second modified sections M2, is the spacing at which cracks do not connect between adjacent second modified sections M2. The upper limit of the spacing of the second modified sections M2 is the spacing at which a bonding force reduction region R, described later, can be formed. This spacing is, for example, 30 μm to 80 μm.

[0082] In this case, the second modified portion M2 expands, and compressive stress acts on it, while tensile stress acts on the region Q1 above the second modified portion M2 and the region Q2 below the second modified portion M2. That is, tensile stress accumulates in these regions Q1 and Q2, and tensile stress acts on the surface Wa of the first wafer W. As a result, a compressive stress J acts on the upper part of the first wafer W (the part above the second modified portion M2), causing the upper part of the first wafer W to bend diagonally upward so that the peripheral portion We peels off (arrow in Figure 11(a)).

[0083] Here, between the first wafer W and the second wafer S, the bonding region between the first and second laminated films, that is, the bonding region between the first bonding film Fw (or the inner unbonded region A2) and the second bonding film Fs, is the most prone to delamination. This is because an unbonded region A is formed in the gap between the outer periphery of the first wafer W and the outer periphery of the second wafer S. In this case, corresponding to the compressive stress J in the upper part of the first wafer W described above, tensile stress acts on the bonding region between the first bonding film Fw (or the inner unbonded region A2) and the second bonding film Fs, reducing the bonding force of the bonding region and forming a bonding force reduction region R. This bonding force reduction region R extends between the first modified region N1, which will be described later, and the outer edge.

[0084] The bonding force reduction region R may be formed between the surface Wa of the first wafer W and the first bonding film Fw, or, for example, if the first laminated film includes a delamination layer as described above, it may be formed between the surface Wa of the first wafer W and the delamination layer. The location of the bonding force reduction region R depends on the bonding force between adjacent films (interlayers).

[0085] Next, as shown in Figure 11(b), laser light L is irradiated onto multiple irradiation points aligned in the thickness direction (vertical direction) of the first wafer W, along the boundary of the peripheral portion We to be removed, and radially outward from the inner edge of the unbonded region A (inner unbonded region A2). The statement that multiple irradiation points are aligned in the thickness direction means that the arrangement direction of the multiple irradiation points includes a thickness direction component, and includes, for example, cases where multiple irradiation points are aligned perpendicular to the surface Wa as shown in the figure, or cases where multiple irradiation points are aligned in a direction inclined horizontally from the thickness direction. In other words, the first modified region N1, which will be described later, may extend vertically, or it may be aligned in a direction inclined horizontally from the thickness direction.

[0086] When laser light L is irradiated, the irradiation point is modified, and a first modified area M1, which is a laser trace, is formed. When multiple first modified areas M1 are formed, a first crack C1 extends in the direction in which these first modified areas M1 are aligned. The first crack C1 extends so as to connect between adjacent first modified areas M1. The upper end of the first crack C1 reaches the back surface Wb of the first wafer W, and the lower end of the first crack C1 reaches the interface between the first bonding film Fw (or the inner unbonded region A2) and the second bonding film Fs. When forming the first modified region N1, irradiation conditions such as the output and spacing of the laser light L are controlled so that the first crack C1 extends in this manner. Then, the first modified region N1 including the first modified area M1 and the first crack C1 is formed. Note that the laser light L is irradiated around the entire circumference of the first wafer W, and the first modified region N1 is formed around the entire circumference.

[0087] When the first modified region N1 is formed, the compressive stress in the upper portion of the first wafer W is released, and the tensile stress in the bonding force reduction region R is released. At this time, in the bonding force reduction region R, the tensile stress is released, for example, from the radially outer side towards the inside (towards the first modified region N1). As a result, the first bonding film Fw (or the inner unbonded region A2) and the second bonding film Fs delaminate in the bonding force reduction region R. The delamination in the bonding force reduction region R proceeds to the first modified region N1, and the bonding force reduction region R and the first modified region N1 become connected.

[0088] As described above, once the first modified region N1 and the bonding force reduction region R are formed on the first wafer W, the peripheral removal device 100 removes the peripheral portion We using the first modified region N1 and the bonding force reduction region R as starting points, as shown in Figure 11(c). At this time, the first laminated film (first bonding film Fw) on the lower surface side of the peripheral portion We is also removed. Therefore, as will be described later, the first laminated film does not remain above the grinding target surface P when grinding the back surface Wb of the first wafer W.

[0089] Next, a modified example 2 will be described. In modified example 2, as shown in Figure 12, laser light L is irradiated into the outer periphery of the first wafer W to form a first modified region N1, a second modified region N2, and a third modified region N3.

[0090] First, as shown in Figure 12(a), laser light L is irradiated onto multiple irradiation points aligned in the thickness direction (vertical direction) of the first wafer W, along the boundary of the peripheral portion We to be removed, and radially outward from the inner edge of the unbonded region A (inner unbonded region A2). The statement that multiple irradiation points are aligned in the thickness direction means that the arrangement direction of the multiple irradiation points includes a thickness direction component, and includes, for example, cases where multiple irradiation points are aligned perpendicular to the surface Wa as shown in the figure, or cases where multiple irradiation points are aligned in a direction inclined horizontally from the thickness direction. In other words, the first modified region N1, which will be described later, may extend vertically, or it may be aligned in a direction inclined horizontally from the thickness direction.

[0091] When laser light L is irradiated, the irradiated area is modified, and a first modified area M1, which is a laser trace, is formed. When multiple first modified areas M1 are formed, a first crack C1 extends in the direction in which these first modified areas M1 are aligned. The first crack C1 extends so as to connect between adjacent first modified areas M1. Then, a first modified region N1 including the first modified areas M1 and the first crack C1 is formed. Note that the laser light L is irradiated around the entire circumference of the first wafer W, and the first modified region N1 is formed around the entire circumference.

[0092] The upper end of the first crack C1 reaches the back surface Wb of the first wafer W. The lower end of the first crack C1 is above the grinding target surface P and extends to the same height as the second modified region N2, which will be described later. When forming the first modified region N1, irradiation conditions such as the output and spacing of the laser beam L are controlled so that the first crack C1 extends in this manner.

[0093] Next, as shown in Figure 12(b), a laser beam L is irradiated horizontally into the interior of the first wafer W at least radially outward from the first modified region N1 (first modified portion M1 and first crack C1) and above the grinding target surface P. At this time, the laser beam L may be irradiated from the radially outward to the inward, or from the radially inward to the outward.

[0094] The irradiation point where the laser beam L is irradiated is modified, and a second modified area M2, which is a laser trace, is formed. When multiple second modified areas M2 are formed, a second crack C2 extends in the direction in which these second modified areas M2 are aligned. The second crack C2 extends so as to connect between adjacent second modified areas M2. Then, a second modified region N2 including the second modified areas M2 and the second crack C2 is formed. Note that the laser beam L is irradiated around the entire circumference of the first wafer W, and the second modified region N2 is formed around the entire circumference.

[0095] The inner end of the second crack C2 is connected to the first modified region N1. The outer end of the first crack C1 is connected to the third modified region N3, which will be described later. When forming the second modified region N2, irradiation conditions such as the output and spacing of the laser beam L are controlled so that the second crack C2 extends in this manner.

[0096] Next, as shown in Figure 12(c), laser light L is irradiated from the radially outer side of the second modified region N2 (second modified portion M2 and second crack C2) toward the second wafer S, for example, in the thickness direction of the first wafer W.

[0097] The irradiation point where the laser beam L is irradiated is modified, and a third modified area M3, which is a laser trace, is formed. When multiple third modified areas M3 are formed, a third crack C3 extends in the direction in which these third modified areas M3 are aligned. The third crack C3 extends so as to connect between adjacent third modified areas M3. Then, a third modified region N3 including the third modified areas M3 and the third crack C3 is formed. Note that the laser beam L is irradiated around the entire circumference of the first wafer W, and the second modified region N2 is formed around the entire circumference.

[0098] The upper end of the third crack C3 connects to the second modified region N2. The lower end of the third crack C3 reaches, for example, the outer unjoined region A1. When forming the third modified region N3, irradiation conditions such as the output and spacing of the laser beam L are controlled so that the third crack C3 extends in this manner.

[0099] As described above, once the first modified region N1, the second modified region N2, and the third modified region N3 are formed on the first wafer W, the peripheral removal device 100 removes the peripheral portion We using the first modified region N1, the second modified region N2, and the third modified region N3 as starting points, as shown in Figure 12(d). At this time, the first laminated film (first bonding film Fw) on the lower side of the peripheral portion We is also removed. Therefore, as will be described later, the first laminated film does not remain above the grinding target surface P when grinding the back surface Wb of the first wafer W.

[0100] Both Modification 1 and Modification 2 described above can enjoy the same effects as the first and second embodiments. In the first embodiment, since bevel fill is performed before laser edge trimming, it is preferable to form the modified region shown in Figures 9, 11, and 12 during laser edge trimming. On the other hand, in the second embodiment, since bevel fill is performed after laser edge trimming, the peripheral portion We can be removed in any shape during laser edge trimming, and the modified region may also be formed in any shape.

[0101] In the embodiments described above, the filler material G was filled into the unbonded region A in the bevel fill as shown in Figures 8(b) and 10(d). However, the filler material G may also be inspected in an inspection device 200, for example, as shown in Figure 13. The inspection device 200 is provided, for example, in the processing station 3 of the wafer processing system 1.

[0102] For example, the inspection device 200 has an infrared camera 210. Here, as described above, if a glass-based material is used for the filler G, the infrared light emitted from the infrared camera 210 as an inspection wave will pass through the filler G, and therefore the infrared camera 210 will not be able to detect the filler G. Therefore, an inhibitor K that blocks infrared light is mixed into the filler G. The inhibitor K can be a material that absorbs infrared light, such as carbon. Alternatively, the inhibitor K may be a material that reflects infrared light. In this case, the infrared camera 210 can detect the filler G containing the inhibitor K, and it is possible to inspect whether or not the filler G is properly filled in the unbonded region A.

[0103] For example, in the first embodiment described above, after filling the unbonded region A with filler material G as shown in Figure 8(b), the polymerized wafer T is transported to the inspection device 200 by the wafer transport device 40 and the filler material G is inspected. In the second embodiment described above, after filling the unbonded region A with filler material G as shown in Figure 10(d), the polymerized wafer T is transported to the inspection device 200 by the wafer transport device 40 and the filler material G is inspected. By inspecting the filler material G in the unbonded region A in this way, the same effects as those of the first and second embodiments described above can be reliably achieved.

[0104] The inspection method for the filler material G in the inspection device 200 is arbitrary. For example, if the inspection device 200 has a CSAM (not shown), the inhibitor K mixed into the filler material G is a material that inhibits ultrasonic waves used as inspection waves. Also, if the filler material G is fired as in this embodiment, the inhibitor K needs to be heat resistant.

[0105] The configuration of the wafer processing system 1 is not limited to the above embodiment. For example, some of the equipment of the wafer processing system 1 may be provided outside the wafer processing system 1.

[0106] In addition, in the first wafer W, the first device layer Dw may be formed up to the bevel portion above the grinding target surface P, while the first bonding film Fw may not be formed up to the bevel portion. This disclosure can also be applied in this case. Furthermore, for example, when a second wafer S is used as a support substrate, the bonding of the first wafer W and the second wafer S is not limited to bonding the first bonding film Fw and the second bonding film Fs. For example, this disclosure can also be applied when the first wafer W and the second wafer S are bonded with a bonding agent.

[0107] The embodiments disclosed herein should be considered in all respects as illustrative and not restrictive. The embodiments described above may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the appended claims. For example, the constituent elements of the embodiments described above can be combined in any way. Such any combination will naturally yield the functions and effects of each constituent element in the combination, as well as other functions and effects that will be apparent to those skilled in the art from the description herein.

[0108] Furthermore, the effects described herein are merely descriptive or illustrative and not limiting. In other words, the technology relating to this disclosure may produce other effects that will be apparent to those skilled in the art from the description herein, in addition to or in lieu of the effects described herein.

[0109] 1 Wafer processing system 50 Filling device 90 Laser irradiation device 130 Control device Dw First device layer Fw First bonding film G Filler L Laser light S Second wafer T Polymerized wafer W First wafer Wa Surface

Claims

1. A substrate processing method for processing a polymerized substrate in which a first substrate having a laminated film formed on its surface and a second substrate are joined together, the method comprising: filling the gap between the outer periphery of the first substrate and the outer periphery of the second substrate with a filler; and irradiating the outer periphery of the first substrate with a laser to form a modified region.

2. The substrate processing method according to claim 1, wherein the laminated film includes a first bonding film, a second bonding film is formed on the surface of the second substrate, the first bonding film and the second bonding film are bonded together, and the outer peripheral edge of the modified region is located radially outward from the inner peripheral edge of the unbonded region where the first bonding film and the second bonding film are not bonded together.

3. A substrate processing method according to claim 1 or 2, comprising removing the peripheral edge of the first substrate along the modified region and grinding the back surface of the first substrate.

4. The substrate processing method according to claim 3, wherein after removing the peripheral portion, the back surface of the first substrate is ground.

5. The substrate processing method according to claim 3, wherein the peripheral portion is removed while grinding the back surface of the first substrate.

6. A substrate processing method according to claim 1 or 2, wherein the modified region is formed after filling with the filler.

7. A substrate processing method according to claim 1 or 2, comprising: removing the peripheral edge of the first substrate along the modified region after forming the modified region; and filling the substrate with the filler after removing the peripheral edge.

8. The substrate processing method according to claim 1 or 2, wherein forming the modified region includes: forming a first modified region extending in the thickness direction of the first substrate; forming a second modified portion extending in the radial direction of the first substrate radially outward from the first modified region; and forming a bonding force reduction region in which the bonding force is reduced in the bonding region between the first substrate and the second substrate, radially outward from the first modified region, by forming the second modified portion.

9. The substrate processing method according to claim 1 or 2, wherein forming the modified region includes forming a first modified region extending in the thickness direction of the first substrate; forming a second modified region extending in the radial direction of the first substrate radially outward from the first modified region; and forming a third modified region extending in the thickness direction of the first substrate radially outward from the second modified region.

10. A substrate processing method according to claim 1 or 2, comprising inspecting the filler, wherein the filler has an inhibitor that obstructs the inspection wave used when inspecting the filler.

11. A substrate processing system for processing a polymerized substrate in which a first substrate having a laminated film formed on its surface and a second substrate are joined together, comprising: a filling device for filling the gap between the outer periphery of the first substrate and the outer periphery of the second substrate with a filler; a laser irradiation device for irradiating the first substrate with laser light; and a control device, wherein the control device executes control to form a modified region by irradiating the outer periphery of the first substrate with a laser.

12. The substrate processing system according to claim 11, wherein the laminated film includes a first bonding film, a second bonding film is formed on the surface of the second substrate, the first bonding film and the second bonding film are bonded together, and the control device performs control to form the modified region such that the outer peripheral edge of the modified region is located radially outward from the inner peripheral edge of the unbonded region where the first bonding film and the second bonding film are not bonded together.

13. The substrate processing system according to claim 11 or 12, comprising: a peripheral removal device for removing the peripheral edge of the first substrate along the modified region; and a grinding device for grinding the back surface of the first substrate.

14. The substrate processing system according to claim 13, wherein the control device performs control to grind the back surface of the first substrate after removing the peripheral portion.

15. A substrate processing system according to claim 11 or 12, comprising a grinding device for grinding the back surface of the first substrate, wherein the control device performs control to remove the peripheral edge of the first substrate while grinding the back surface of the first substrate.

16. The substrate processing system according to claim 11 or 12, wherein the control device performs control to form the modified region after filling with the filler.

17. A substrate processing system according to claim 11 or 12, comprising a peripheral removal device for removing the peripheral edge of the first substrate along the modified region, wherein the control device performs the following: control for removing the peripheral edge after forming the modified region, and control for filling the substrate with the filler after removing the peripheral edge.

18. The substrate processing system according to claim 11 or 12, wherein the control device performs the following actions: control to form a first modified region extending in the thickness direction of the first substrate; control to form a second modified portion extending in the radial direction of the first substrate radially outward from the first modified region; and control to form a bonding force reduction region in which the bonding force is reduced, radially outward from the first modified region and in the bonding region between the first substrate and the second substrate, by forming the second modified portion.

19. The substrate processing system according to claim 11 or 12, wherein the control device performs the following actions: control to form a first modified region extending in the thickness direction of the first substrate; control to form a second modified region extending in the radial direction of the first substrate radially outward from the first modified region; and control to form a third modified region extending in the thickness direction of the first substrate radially outward from the second modified region.

20. The substrate processing system according to claim 11 or 12, comprising an inspection device for inspecting the filler, wherein the filler has an inhibitor that obstructs the inspection wave used when inspecting the filler.

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