Adhesive film for semiconductor, method for producing adhesive film for semiconductor, adhesive tape, method for producing semiconductor device, and semiconductor device

Abstract

This adhesive film for semiconductors contains a thermally conductive filler. The content of the thermally conductive filler is 20-70 mass% with respect to the total mass of the adhesive film. The adhesive film for semiconductors has, along the thickness direction, a first region composed of a first adhesive composition, and a second region composed of a second adhesive composition and having a lower mass concentration of the thermally conductive filler than the first region.

Description

Film-like Adhesive for Semiconductor, Method for Manufacturing Film-like Adhesive for Semiconductor, Adhesive Tape, Method for Manufacturing Semiconductor Device, and Semiconductor Device

[0001] The present disclosure relates to a film-like adhesive for a semiconductor, a method for manufacturing the film-like adhesive for a semiconductor, an adhesive tape, a method for manufacturing a semiconductor device, and a semiconductor device.

[0002] Conventionally, in order to connect a semiconductor chip and a substrate, a wire bonding method using a fine metal wire such as a gold wire has been widely applied. On the other hand, in order to meet the requirements for higher functionality, higher integration, higher speed, etc. of semiconductor devices, a flip chip connection method (FC connection method) in which conductive protrusions called bumps are formed on a semiconductor chip or a substrate and the semiconductor chip and the substrate are directly connected is becoming widespread.

[0003] For example, regarding the connection between a semiconductor chip and a substrate, a COB (Chip On Board) type connection method that is widely used in BGA (Ball Grid Array), CSP (Chip Size Package), etc. also falls under the FC connection method. The FC connection method is also widely used in a COC (Chip On Chip) type connection method in which connection parts (for example, bumps and wirings) are formed on a semiconductor chip to connect between semiconductor chips.

[0004] For the connection between such connection members such as the connection between a semiconductor chip and a substrate and the connection between semiconductor chips, a film-like adhesive may be used. As one of the mounting technologies using a film-like adhesive, there is a method of preparing a wafer with a film-like adhesive attached (a semiconductor wafer with an adhesive layer) and using a semiconductor chip with an adhesive layer obtained from this wafer (see, for example, Patent Document 1). In this method, a sealing portion is formed in the gap between the connection members by the film-like adhesive (adhesive layer), and while the connection members are adhered, the gap is sealed.

[0005] Japanese Patent Application Laid-Open No. 2009-239138

[0006] In recent semiconductor devices, the demands for higher functionality have led to narrower gaps between connecting components and narrower pitches between connections, resulting in an increasing tendency for heat generation near the connections. Therefore, it has become important to improve the thermal conductivity of the sealing portion and enhance heat dissipation. One possible solution is to increase the thermal conductivity of the sealing portion by increasing the amount of thermal conductive filler used. However, this method increases the melt viscosity of the adhesive film as the amount of thermal conductive filler used increases, which can easily lead to connection failures due to the interlocking of resin and filler between electrodes, as well as sealing failures in narrow gaps.

[0007] Therefore, the main objective of this disclosure is to provide a film-like adhesive for semiconductors that has a sufficiently low minimum melt viscosity and exhibits high thermal conductivity after curing.

[0008] It was previously thought difficult to achieve both low melt viscosity and high thermal conductivity. However, after diligent research by the present inventors, it was discovered that by creating a difference in the concentration distribution of the thermal conductive filler in the thickness direction of the film-like adhesive, it is possible to ensure a sufficiently low minimum melt viscosity while also ensuring the improved thermal conductivity effect of the thermal conductive filler.

[0009] Several aspects of this disclosure provide the following [1] to

[20] : [1] A film-like adhesive for semiconductors containing a thermally conductive filler, wherein the content of the thermally conductive filler is 20 to 70% by mass, based on the total mass of the film-like adhesive, and the film-like adhesive has, along the thickness direction, a first region consisting of a first adhesive composition and a second region consisting of a second adhesive composition, wherein the mass concentration of the thermally conductive filler is lower than that of the first region. [2] The film-like adhesive for semiconductors according to [1], wherein the ratio of the mass concentration of the thermally conductive filler in the second region to the mass concentration of the thermally conductive filler in the first region is 0.5 or less. [3] The film-like adhesive for semiconductors according to [1] or [2], wherein the mass concentration of the thermally conductive filler in the first region is 30 to 85% by mass, and the mass concentration of the thermally conductive filler in the second region is 0 to 50% by mass. [4] A semiconductor film adhesive according to any one of [1] to [3], wherein the ratio of the amount of thermal conductive filler contained in the first region to the total amount of thermal conductive filler contained in the film adhesive is 0.4 to 1.0 by mass ratio, and the ratio of the amount of thermal conductive filler contained in the second region to the total amount of thermal conductive filler contained in the film adhesive is 0 to 0.6 by mass ratio. [5] A semiconductor film adhesive according to any one of [1] to [4], wherein the ratio of the thickness of the first region to the thickness of the film adhesive is 0.3 to 0.9, and the ratio of the thickness of the second region to the thickness of the film adhesive is 0.1 to 0.7. [6] A semiconductor film adhesive according to any one of [1] to [5], wherein the thermal conductive filler contains at least one selected from the group consisting of aluminum oxide and boron nitride. [7] A semiconductor film adhesive according to any one of [1] to [6], wherein the median diameter of the thermally conductive filler is 0.1 to 5 μm. [8] A semiconductor film adhesive according to any one of [1] to [7], which contains a filler other than the thermally conductive filler. [9] A semiconductor film adhesive according to [8], wherein the other filler contains silica.

[10] The semiconductor film adhesive according to [8] or [9], wherein the content of the other filler is 0 to 50% by mass based on the total mass of the film adhesive.

[11] The semiconductor film adhesive according to any one of [8] to

[10] , wherein the ratio of the mass concentration of the other filler in the first region to the mass concentration of the other filler in the second region is 0.5 or less.

[12] The semiconductor film adhesive according to any one of [1] to

[11] , wherein the first adhesive composition and the second adhesive composition each contain a thermosetting resin, a curing agent, and a thermoplastic resin.

[13] The semiconductor film adhesive according to any one of [1] to

[12] , wherein at least one of the first adhesive composition and the second adhesive composition contains a flux compound.

[14] The semiconductor film adhesive according to any one of [1] to

[13] , which is nonconductive.

[15] A semiconductor film adhesive according to any one of [1] to

[14] , used for joining a semiconductor chip to a substrate and sealing the gap between the semiconductor chip and the substrate.

[16] A method for manufacturing a semiconductor film adhesive according to any one of [1] to

[15] , comprising the steps of: preparing a first adhesive film made of the first adhesive composition and a second adhesive film made of the second adhesive composition; and providing one of the first adhesive film and the second adhesive film on the other.

[17] An adhesive tape comprising a semiconductor film adhesive according to any one of [1] to

[15] and an adhesive tape provided on the film adhesive.

[18] An adhesive tape according to

[17] , wherein the film adhesive and the adhesive tape are laminated such that the surface of the film adhesive on the second region side faces the adhesive tape side.

[19] A method for manufacturing a semiconductor device, comprising the step of heating and joining a semiconductor chip and a substrate in a state in which their connection portions face each other via a semiconductor film adhesive described in any of [1] to

[15] .

[20] A semiconductor device comprising: a semiconductor chip having a first connection portion; a substrate having a second connection portion electrically connected to the first connection portion; and a sealing portion that joins the semiconductor chip and the substrate and fills the gap between the semiconductor chip and the substrate, wherein the sealing portion contains 20 to 70% by mass of a thermally conductive filler based on the total mass of the sealing portion, and has a first region and a second region having a lower mass concentration of the thermally conductive filler than the first region in the thickness direction.

[0010] According to this disclosure, it is possible to provide a film-like adhesive for semiconductors that has a sufficiently low minimum melt viscosity and exhibits high thermal conductivity after curing.

[0011] Figure 1 is a schematic cross-sectional view showing one embodiment of the semiconductor film adhesive of the present disclosure. Figure 2(a) is a schematic cross-sectional view showing one embodiment of the semiconductor device of the present disclosure, and Figure 2(b) is a schematic cross-sectional view showing another embodiment of the semiconductor device of the present disclosure. Figure 3 is a schematic cross-sectional view showing another embodiment of the semiconductor device of the present disclosure. Figure 4 is a schematic process cross-sectional view showing one embodiment of the method for manufacturing the semiconductor device of the present disclosure. Figure 5 is a schematic process cross-sectional view showing the process following Figure 4. Figure 6 is a schematic process cross-sectional view showing the process following Figure 5. Figure 7 is a schematic process cross-sectional view showing the process following Figure 6. Figure 8 is a schematic process cross-sectional view showing the process following Figure 7.

[0012] In this specification, "(meth)acrylic" means at least one of acrylic and its corresponding methacrylic. The same applies to other similar expressions such as "(meth)acryloyl" and "(meth)acrylate." Furthermore, numerical ranges indicated using "~" indicate a range that includes the numbers before and after "~" as the minimum and maximum values, respectively. Also, unless specifically stated otherwise, the units of the numbers before and after "~" are the same. In addition, in numerical ranges described in this specification, the upper or lower limits of the numerical range may be replaced with the values ​​shown in the examples. Furthermore, the upper and lower limits described individually can be combined in any way. Also, unless otherwise specified, the materials exemplified below may be used individually or in combination of two or more. The content of each component in the composition means the total amount of the multiple substances present in the composition if there are multiple substances corresponding to each component in the composition, unless otherwise specified.

[0013] The embodiments of the present invention will be described in detail below, with reference to the drawings as appropriate. In the drawings, the same or corresponding parts are denoted by the same reference numerals, and redundant explanations are omitted. Furthermore, unless otherwise specified, positional relationships such as top, bottom, left, and right are based on the positional relationships shown in the drawings. Moreover, the dimensional ratios in the drawings are not limited to those shown.

[0014] <Film-like adhesive for semiconductors> Figure 1 is a schematic cross-sectional view showing a film-like adhesive according to one embodiment. The film-like adhesive 1 shown in Figure 1 is a film-like adhesive for semiconductors containing a thermally conductive filler (hereinafter sometimes simply referred to as "film-like adhesive"), and has, along the thickness direction (up and down direction in Figure 1), a first region 2 made of a first adhesive composition and a second region 3 made of a second adhesive composition, in which the mass concentration of the thermally conductive filler is lower than that of the first region 2.

[0015] As shown in Figure 1, the first region 2 and the second region 3 have a predetermined thickness. The thicknesses of the first region 2 and the second region 3 may be adjusted so that the ratio to the thickness of the film-like adhesive 1 is within a predetermined range. For example, the thickness T of the film-like adhesive 1 ０ The thickness T of the first region 2 relative to１ The ratio (T １ / T ０ ) may be 0.3 to 0.9, and the ratio (T ０ ) of the thickness T ２ of the second region 3 to the thickness T ２ of the film-shaped adhesive 1 may be 0.1 to 0.7. When the above ratio (T ０ / T １ ) is 0.3 to 0.9 and the above ratio (T ０ / T ２ ) is 0.1 to 0.7, there is a tendency that a low minimum melt viscosity and a high thermal conductivity can be more highly compatible. From the same viewpoint, the above ratio (T ０ / T １ ) may be 0.4 or more or 0.5 or more, may be 0.8 or less or 0.7 or less, or may be 0.4 to 0.8 or 0.5 to 0.7. From the same viewpoint, the above ratio (T ０ / T ２ ) may be 0.2 or more or 0.3 or more, may be 0.6 or less or 0.5 or less, or may be 0.2 to 0.6 or 0.3 to 0.5.

[0016] The thickness T ０ of the film-shaped adhesive 1 may be, for example, 2 to 20 μm, 3 to 16 μm, or 4 to 12 μm.

[0017] The thickness T １ of the first region 2 may be, for example, 1 to 10 μm, 2 to 8 μm, or 3 to 6 μm.

[0018] The thickness T ２ of the second region 3 may be, for example, 1 to 10 μm, 2 to 8 μm, or 3 to 6 μm.

[0019] ​​As shown in Figure 1, the first region 2 and the second region 3 extend along the main surface direction of the film-like adhesive 1 (the left-right direction in Figure 1). That is, the first region 2 and the second region 3 are formed in layers. Therefore, the first region 2 and the second region 3 in Figure 1 can be rephrased as the first adhesive layer and the second adhesive layer, respectively. Also, although a clear boundary exists between the first region 2 and the second region 3 in Figure 1, this boundary is not always clear and may not be visible in all cases.

[0020] A thermally conductive filler is defined as a filler whose thermal conductivity, as measured by a xenon flash thermal diffusivity measuring device, is 10 W / (m·K) or higher. A thermally conductive filler may also be referred to as a thermally conductive particle. Examples of thermally conductive fillers include aluminum oxide, magnesium oxide, boron nitride, aluminum nitride, silicon nitride, silicon carbide, metallic aluminum, graphite, etc., and one of these may be used alone or in combination of two or more. From the viewpoint of achieving a higher degree of compatibility between low minimum melt viscosity and high thermal conductivity, the thermally conductive filler may include at least one selected from the group consisting of aluminum oxide and boron nitride. From the viewpoint of exhibiting particularly high thermal conductivity, the boron nitride may be hexagonal boron nitride.

[0021] Median diameter (D) of thermally conductive filler ５０ The median diameter of the thermally conductive filler may be 0.1 μm or more, 0.3 μm or more, or 0.5 μm or more, and may be 5 μm or less, 3 μm or less, 1 μm or less, or 0.6 μm or less, and may be 0.1 to 5 μm, 0.3 to 3 μm, 0.5 to 1 μm, or 0.1 to 0.6 μm. The larger the median diameter of the thermally conductive filler, the easier it is to lower the minimum melt viscosity, and the smaller the median diameter of the thermally conductive filler, the easier it is to increase the minimum melt viscosity. On the other hand, according to this disclosure, even if the median diameter of the thermally conductive filler is small, it is possible to achieve both low minimum melt viscosity and high thermal conductivity, and this effect tends to be more pronounced the smaller the median diameter of the thermally conductive filler.

[0022] The above median diameter (D ５０) refers to the particle size at which the cumulative volume accumulated from the smallest particle size to the smallest particle size in the volume-based particle size distribution of the thermal conductive filler reaches 50% of the total thermal conductive filler. ５０ The particle size distribution used in the calculation of ) can be obtained by measuring the particle size distribution using a laser diffraction scattering particle size distribution analyzer under the condition of irradiating a cyclohexanone dispersion containing a filler at a concentration of 60% by mass with visible light.

[0023] The thermally conductive filler content in the film-like adhesive 1 is 20 to 70% by mass, based on the total mass of the film-like adhesive 1. Since the thermally conductive filler content of the film-like adhesive 1 is within the above range and the film-like adhesive 1 has the above-mentioned first region 2 and second region 3, it has a sufficiently low minimum melt viscosity and exhibits high thermal conductivity after curing. For this reason, the film-like adhesive 1 is suitable as an adhesive for connecting (bonding) and sealing connecting members such as semiconductor chips, and is particularly suitable as an adhesive for bonding semiconductor chips to a substrate and sealing the gap between the semiconductor chip and the substrate.

[0024] From the viewpoint of obtaining higher thermal conductivity, the content of the thermally conductive filler may be 30% by mass or more, 35% by mass or more, 40% by mass or more, 45% by mass or more, or 50% by mass or more, based on the total mass of the film-like adhesive 1. From the viewpoint of obtaining a lower minimum melt viscosity, the content of the thermally conductive filler may be 60% by mass or less, 50% by mass or less, 45% by mass or less, or 40% by mass or less, based on the total mass of the film-like adhesive 1. From the above viewpoint, the content of the thermally conductive filler may be 30-60% by mass, 35-50% by mass, 40-50% by mass, 45-50% by mass, 50-70% by mass, 20-45% by mass or 20-40% by mass, based on the total mass of the film-like adhesive 1.

[0025] Total amount M of thermally conductive filler contained in film-like adhesive 1 ０ａ The amount M of thermally conductive filler contained in the first region 2 relative to the given amount. １ａ The ratio (M １ａ / M ０ａThe ratio (M) may be 0.1 to 1.0 in mass ratio, and may also be 0.2 to 1.0, 0.3 to 1.0, 0.4 to 1.0, 0.6 to 1.0, 0.8 to 1.0, or 0.9 to 1.0. １ａ / M ０ａ When the ratio is 0.4 or higher, it tends to be possible to achieve a higher degree of compatibility between a low minimum melt viscosity and high thermal conductivity.

[0026] Total amount M of thermally conductive filler contained in film-like adhesive 1 ０ａ The amount M of thermally conductive filler contained in the second region 3 relative to the amount M ２ａ The ratio (M ２ａ / M ０ａ The ratio (M) may be 0 to 0.9 in mass ratio, and may be 0 to 0.8, 0 to 0.7, 0 to 0.6, 0 to 0.5, 0 to 0.4, 0 to 0.3, 0 to 0.2, or 0 to 0.1. ２ａ / M ０ａ When the coefficient of flux (%) is 0.6 or less, it tends to be possible to achieve a higher degree of compatibility between low minimum melt viscosity and high thermal conductivity.

[0027] Mass concentration C of the thermally conductive filler in the first region 2 １ａ The mass concentration C may be 30 to 85%. １ａ When the mass concentration C is 30% or more, higher thermal conductivity is more easily obtained. １ａ If the mass concentration C is 85% or less, a lower minimum melt viscosity is more likely to be obtained. From a similar viewpoint, １ａ The mass concentration C may be 40% by mass or more, 50% by mass or more, 58% by mass or more, or 66% by mass or more, and may be 80% by mass or less, 75% by mass or less, 65% by mass or less, 60% by mass or less, 55% by mass or less, or 50% by mass or less, and may be 40 to 80% by mass, 50 to 75% by mass, 58 to 65% by mass, 66 to 75% by mass, or 50 to 60% by mass. １ａ This can be rephrased as the content of the thermally conductive filler in the first adhesive composition, based on the total mass of the first adhesive composition.

[0028] Mass concentration C of the thermally conductive filler in the second region 3 ２ａThe mass concentration C may be 0 to 70% by mass, 0 to 60% by mass, 0 to 50% by mass, 0 to 40% by mass, 0 to 30% by mass, or 0 to 20% by mass. ２ａ When the mass concentration C is 50% or less, it tends to be possible to achieve a higher degree of compatibility between a low minimum melt viscosity and high thermal conductivity. ２ａ This can be rephrased as the content of the thermally conductive filler in the second adhesive composition, based on the total mass of the second adhesive composition.

[0029] Mass concentration C of the thermally conductive filler in the first region 2 １ａ The mass concentration C of the thermally conductive filler in the second region 3 is relative to the mass concentration C of the thermally conductive filler in the second region 3. ２ａ The ratio (C ２ａ / C １ａ The above ratio (C) is less than 1. ２ａ / C １ａ The above ratio (C) may be 0.5 or less, 0.4 or less, or 0.3 or less, and may be 0. ２ａ / C １ａ When the coefficient of flux (%) is 0.5 or less, it tends to be possible to achieve a higher degree of compatibility between low minimum melt viscosity and high thermal conductivity.

[0030] The film-like adhesive 1 may contain fillers other than the thermally conductive filler. These other fillers may be used, for example, to control the viscosity of the adhesive composition or to control the physical properties of the film-like adhesive after curing.

[0031] Other fillers may be inorganic fillers (inorganic particles) or organic fillers (organic particles). Examples of inorganic fillers include silica, magnesium hydroxide, and anhydrous magnesium carbonate. Inorganic fillers may contain silica from the viewpoint of maintaining a low coefficient of thermal expansion and low density. Examples of organic fillers include polyurethane resin, polyimide resin, methyl methacrylate resin, and methyl methacrylate-butadiene-styrene copolymer resin (MBS). Other fillers may be used individually or in combination of two or more types.

[0032] The content of other fillers in the film-like adhesive 1 may be 0 to 50% by mass, or 10 to 40% by mass, based on the total mass of the film-like adhesive 1. When the content of other fillers is 50% by mass or less, the thermal conductivity tends to be higher. When the content of other fillers is 10% by mass or more, the coatability tends to be improved. From these viewpoints, the content of other fillers may be 15% by mass or more, 30% by mass or less, 25% by mass or less, 15 to 30% by mass, or 15 to 25% by mass, based on the total mass of the film-like adhesive 1. In one embodiment, from the same viewpoint as above, the silica content in the film-like adhesive 1 (based on the total mass of the film-like adhesive 1) may be within the above range.

[0033] Total amount M of other fillers contained in film-like adhesive 1 ０ｂ The amount M of other fillers contained in the first region 2 relative to this. １ｂ The ratio (M １ｂ / M ０ｂ The ratio (M) may be 0 to 0.5 in mass ratio, and may be 0 to 0.4 or 0 to 0.3. １ｂ / M ０ｂ The closer this value is to 0, the more likely it is to achieve a higher degree of compatibility between low minimum melt viscosity and high thermal conductivity. In one embodiment, from the same viewpoint as above, the total amount M of silica contained in the film adhesive 1 ０ｃ The amount of silica M contained in the first region 2 relative to the given amount. １ｃ The ratio (M １ｃ / M ０ｃ ) may be within the above range.

[0034] Total amount M of other fillers contained in film-like adhesive 1 ０ｂ The amount M of other fillers contained in the second region 3 relative to this. ２ｂ The ratio (M ２ｂ / M ０ｂ The ratio (M) may be 0.5 to 1.0 in mass ratio, and may also be 0.6 to 1.0 or 0.7 to 1.0. ２ｂ / M ０ｂThe closer this value is to 1, the more likely it is to achieve a higher level of compatibility between low minimum melt viscosity and high thermal conductivity. In one embodiment, from the same viewpoint as above, the total amount M of silica contained in the film adhesive 1 ０ｃ The amount of silica M contained in the second region 3 relative to the amount of silica M ２ｃ The ratio (M ２ｃ / M ０ｃ ) may be within the above range.

[0035] Mass concentration C of other fillers in the first region 2 １ｂ The mass concentration C may be 0 to 50%. １ｂ The closer it is to 0, the more likely it is to achieve a higher degree of compatibility between low minimum melt viscosity and high thermal conductivity. From a similar viewpoint, the above mass concentration C １ｂ This may be 40% by mass or less, 30% by mass or less, 20% by mass or less, or 10% by mass or less. In one embodiment, from the same viewpoint as above, the mass concentration C of silica in the first region 2 １ｃ The above range may be acceptable.

[0036] Mass concentration C of other fillers in the second region 3 ２ｂ The mass concentration C may be 25 to 75%. ２ｂ When the mass concentration is 25% or more, the adhesiveness of the film tends to increase, and the above mass concentration C ２ｂ When the mass concentration C is 75% or less, the coating properties tend to improve. From a similar viewpoint, ２ｂ This may be 35% by mass or more, 40% by mass or more, 65% by mass or less, 55% by mass or less, 35 to 65% by mass or 40 to 55% by mass. In one embodiment, from the same viewpoint as above, the mass concentration C of silica in the second region 3 ２ｃ The above range may be acceptable.

[0037] Mass concentration C of other fillers in the second region 3 ２ｂ The mass concentration C of the other filler in the first region 2 relative to １ｂ The ratio (C １ｂ / C ２ｂ The above ratio (C) may be 0.5 or less, 0.3 or less, or 0.1 or less, or it may be 0. １ｂ / C ２ｂThe closer it is to 0, the more likely it is to achieve a higher degree of compatibility between a low minimum melting viscosity and high thermal conductivity. In one embodiment, from the same perspective as above, the mass concentration C of silica in the second region 3 ２ｃ relative to the mass concentration C of silica in the first region 2 １ｃ ratio (C １ｃ / C ２ｃ ) may be within the above range.

[0038] The film-like adhesive 1 may be non-conductive. That is, the film-like adhesive 1 may be a so-called NCF (Non Conductive Film). From the perspective of using a non-conductive film-like adhesive 1, it is preferable not to use a conductive filler as the above thermal conductive filler and other fillers. Here, conductivity means that the electrical conductivity is greater than 10 ６ S / m.

[0039] The film-like adhesive 1 may be provided in a state where a base material such as a support film or a protective film is provided on one main surface and / or the other main surface. In the present disclosure, as one embodiment, a laminate including a base material and a film-like adhesive provided on the base material is referred to as an "adhesive tape".

[0040] Examples of the base material can be the same as those used in the method for manufacturing the film-like adhesive described below. The base material may be an adhesive tape, and the adhesive tape may be a back grind tape. A preferred embodiment of the present disclosure is an adhesive tape (adhesive tape with an adhesive tape) including an adhesive tape and a film-like adhesive provided on the adhesive tape. The adhesive tape with an adhesive tape may be an adhesive tape with a back grind tape. In the case of the form of an adhesive tape with an adhesive tape, the film-like adhesive 1 and the adhesive tape may be laminated so that the surface of the film-like adhesive 1 on the second region 3 side (the surface opposite to the surface on the first region 2 side) faces the adhesive tape side. By adopting such a form, when an adhesive tape is laminated on a semiconductor wafer to form a semiconductor chip, the second region is arranged to face the substrate side, so that reduction of fillets can be expected.

[0041] Adhesive tape (backgrind tape) is usually configured so that one main surface side is the adhesive layer. However, in adhesive tape, the adhesive tape (backgrind tape) is placed on the film-like adhesive 1 so that the adhesive layer and the film-like adhesive are in contact. The thickness of the base material (for example, the thickness of the adhesive tape) may be 20 to 300 μm.

[0042] The adhesive tape may be a laminate of a substrate and a film-like adhesive obtained by the method of manufacturing a film-like adhesive described later, that is, by applying a coating liquid to a substrate, forming a coating film, and drying it. Alternatively, it may be a laminate obtained by attaching a substrate to the film-like adhesive 1 (for example, laminating the film-like adhesive 1 and the substrate). If the substrate is an adhesive tape (for example, a backgrind tape), applying and drying the coating liquid on the adhesive layer of the adhesive tape may cause problems such as destruction of the adhesive layer and migration of components between the adhesive and the adhesive. Therefore, the adhesive tape may be obtained by attaching the adhesive tape to the film-like adhesive 1.

[0043] Next, we will describe components other than fillers that may be included in the first adhesive composition constituting the first region 2 and the second adhesive composition constituting the second region 3. Note that each component described below is not an essential component of the first and second adhesive compositions, and the compositions of the first and second adhesive compositions are not limited to those described below.

[0044] In one embodiment, the first adhesive composition and the second adhesive composition contain a thermosetting resin (hereinafter sometimes referred to as "component (A)"), a curing agent (hereinafter sometimes referred to as "component (B)"), and a thermoplastic resin (hereinafter sometimes referred to as "component (C)").

[0045] (A) Component: Thermosetting resin Component (A) is a component that hardens by forming three-dimensional bonds between molecules when heated or otherwise. Component (A) may be an epoxy resin. Any epoxy resin that has epoxy groups in its molecule can be used without particular restriction. Component (A) may be a compound having two or more epoxy groups in its molecule.

[0046] Component (A) may contain a solid epoxy resin (hereinafter sometimes referred to as "component (A1)"). The inclusion of component (A) in component (A1) tends to improve the appearance of the film formed by coating. Here, solid epoxy resin means an epoxy resin whose viscosity at 25°C, as measured by an E-type viscometer, is greater than 400 Pa·s.

[0047] (A1) Examples of components include bisphenol A type epoxy resin, bisphenol F type epoxy resin, naphthalene type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, phenol aralkyl type epoxy resin, biphenyl type epoxy resin, triphenylmethane type epoxy resin, triphenolmethane type epoxy resin, dicyclopentadiene type epoxy resin, and various polyfunctional epoxy resins. These may be used individually or in combination of two or more types.

[0048] The epoxy equivalent of component (A1) may be 50 to 500 g / eq, or 100 to 400 g / eq or 120 to 370 g / eq.

[0049] The content of component (A1) in the first adhesive composition may be 5 to 40% by mass, 10 to 30% by mass, or 15 to 20% by mass, based on the total amount of the first adhesive composition. When the content is 5% by mass or more, the appearance of the film formed by coating tends to improve, and when the content is 40% by mass or less, the adhesive strength of the film tends not to become too low.

[0050] The content of component (A1) in the second adhesive composition may be 10 to 50% by mass, 15 to 40% by mass, or 20 to 30% by mass, based on the total amount of the second adhesive composition. When the content is 10% by mass or more, the appearance of the film formed by coating tends to improve, and when the content is 50% by mass or less, the adhesive strength of the film tends not to become too low.

[0051] Component (A) may contain a liquid epoxy resin (hereinafter sometimes referred to as "component (A2)"). The inclusion of component (A2) in component (A) tends to reduce the melt viscosity of the film. Here, liquid epoxy resin means an epoxy resin whose viscosity at 25°C, as measured by an E-type viscometer, is 400 Pa·s or less.

[0052] (A2) Examples of components include bisphenol A type glycidyl ether, bisphenol AD ​​type glycidyl ether, bisphenol S type glycidyl ether, bisphenol F type glycidyl ether, water-added bisphenol A type glycidyl ether, ethylene oxide adduct bisphenol A type glycidyl ether, propylene oxide adduct bisphenol A type glycidyl ether, naphthalene resin glycidyl ether, trifunctional or tetrafunctional glycidylamines, etc. These may be used individually or in combination of two or more.

[0053] (A2) The epoxy equivalent of component may be 100 to 3000 g / eq, or 100 to 2000 g / eq or 100 to 1500 g / eq.

[0054] The content of component (A2) in the first adhesive composition may be 1 to 15% by mass, 3 to 12% by mass, or 5 to 9% by mass, based on the total amount of the first adhesive composition. If the content is 1% by mass or more, the melt viscosity of the film tends to decrease, and if the content is 15% by mass or less, the adhesive strength of the film tends not to become too strong.

[0055] The content of component (A2) in the second adhesive composition may be 1 to 15% by mass, 3 to 12% by mass, or 5 to 9% by mass, based on the total amount of the second adhesive composition. If the content is 1% by mass or more, the melt viscosity of the film tends to decrease, and if the content is 15% by mass or less, the adhesive strength of the film tends not to become too strong.

[0056] The ratio of the content of component (A2) to the content of component (A1) in the first adhesive composition ((A2) / (A1)) may be 0.1 to 0.7, 0.2 to 0.6, or 0.3 to 0.5 by mass ratio, from the viewpoint of film formation and viscosity reduction. When the above ratio ((A2) / (A1)) is 0.1 or higher, the melt viscosity of the film tends to be lower, and when the above ratio ((A2) / (A1)) is 0.7 or lower, the adhesive strength of the film does not become too strong, and it tends to be possible to coat it with a good appearance.

[0057] The ratio of the content of component (A2) to the content of component (A1) in the second adhesive composition ((A2) / (A1)) may be 0.01 to 0.5, 0.05 to 0.4, or 0.1 to 0.3 by mass ratio, from the viewpoint of film formation and viscosity reduction. When the above ratio ((A2) / (A1)) is 0.01 or higher, the melt viscosity of the film tends to be lower, and when the above ratio ((A2) / (A1)) is 0.5 or lower, the adhesive strength of the film does not become too strong, and it tends to be possible to coat it with a good appearance.

[0058] The content of component (A) in the first adhesive composition may be 6 to 55% by mass, 13 to 42% by mass, or 20 to 29% by mass, based on the total amount of the first adhesive composition, from the viewpoint of suppressing film expansion during thermal curing and reducing film viscosity. When the content is 6% by mass or more, the melt viscosity of the film tends to be lower, and when the content is 55% by mass or less, the expansion of the film during thermal curing tends to be suppressed.

[0059] The content of component (A) in the second adhesive composition may be 11 to 65% by mass, 18 to 52% by mass, or 25 to 39% by mass, based on the total amount of the second adhesive composition, from the viewpoint of suppressing film expansion during thermal curing and reducing film viscosity. When the content is 11% by mass or more, the melt viscosity of the film tends to be lower, and when the content is 65% by mass or less, the expansion of the film during thermal curing tends to be suppressed.

[0060] (B) Component: Curing agent Examples of (B) component include phenol resin curing agents, acid anhydride curing agents, amine curing agents, imidazole curing agents, and phosphine curing agents. Among these, phenol resin curing agents, acid anhydride curing agents, amine curing agents, and imidazole curing agents exhibit flux activity that suppresses the formation of oxide films at the connection site, and by using these curing agents, connection reliability can be improved.

[0061] (B) Component may contain an imidazole-based curing agent from the viewpoint of improving curability, storage stability and connection reliability. Examples of imidazole-based curing agents include 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyano-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazole trimellitate, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6 Examples include -[2'-undecylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-ethyl-4'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine isocyanurate adduct, 2-phenylimidazole isocyanurate adduct, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, and adducts of epoxy resins with imidazoles. These may be used individually or in combination of two or more. Furthermore, these imidazole-based curing agents may be microencapsulated and used as latent curing agents.

[0062] Imidazole-based curing agents are selected based on their superior curability, storage stability, and connection reliability, including 1-cyanoethyl-2-undecylimidazole, 1-cyano-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazole trimellitate, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine, 2, It may be 4-diamino-6-[2'-ethyl-4'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine isocyanurate adduct, 2-phenylimidazole isocyanurate adduct, 2-phenyl-4,5-dihydroxymethylimidazole, or 2-phenyl-4-methyl-5-hydroxymethylimidazole.

[0063] The content of component (B) may be 0.1 to 10 parts by mass, 0.5 to 7 parts by mass, or 1 to 5 parts by mass per 100 parts by mass of component (A). When the content is 0.1 parts by mass or more, the curability tends to improve, and when it is 10 parts by mass or less, a lower minimum melt viscosity tends to be obtained.

[0064] (C) Component: Thermoplastic resin Component (C) is a polymer that softens at high temperatures and is a component that contributes to improved heat resistance and film formation properties.

[0065] Examples of component (C) include phenoxy resin, polyimide resin, polyamide resin, polycarbodiimide resin, cyanate ester resin, acrylic resin, polyester resin, polyethylene resin, polyethersulfone resin, polyetherimide resin, polyvinyl acetal resin, urethane resin, and acrylic rubber. These may be used individually or in combination of two or more.

[0066] Component (C) may contain phenoxy resin, polyimide resin, acrylic rubber, cyanate ester resin, or polycarbodiimide resin, from the viewpoint of easily obtaining excellent film-forming properties, and may also contain phenoxy resin, polyimide resin, or acrylic rubber.

[0067] The weight-average molecular weight of component (C) is, for example, 10,000 or more, and may be 20,000 or more or 30,000 or more. Such a thermoplastic resin can further improve film-forming properties. The weight-average molecular weight of component (C) may be 1,000,000 or less, and may be 500,000 or less, from the viewpoint of lowering the curing start temperature. In this specification, weight-average molecular weight refers to the weight-average molecular weight measured in polystyrene terms using high-performance liquid chromatography (Shimadzu Corporation, product name: C-R4A). For example, the following conditions can be used for measurement. Detector: LV4000 UV Detector (manufactured by Hitachi, Ltd., product name) Pump: L6000 Pump (manufactured by Hitachi, Ltd., product name) Column: Gelpack GL-S300MDT-5 (2 in total) (manufactured by Resonac Corporation, product name) Eluent: THF / DMF = 1 / 1 (volume ratio) + LiBr (0.03 mol / L) + H3PO4 (0.06 mol / L) Flow rate: 1 mL / min

[0068] The glass transition temperature (Tg) of component (C) may be 120°C or lower, 100°C or lower, or 85°C or lower, from the viewpoint of excellent adhesion to connecting members (e.g., semiconductor chips) of the film-like adhesive. Here, Tg refers to the Tg measured using a DSC (e.g., PerkinElmer, product name: DSC-7) under the conditions of sample amount: 10 mg, heating rate: 10°C / min, and measurement atmosphere: air.

[0069] The content of component (C) in the first adhesive composition may be 1 to 25% by mass, 3 to 20% by mass, or 5 to 15% by mass, based on the total amount of the first adhesive composition. When the content is 1% by mass or more, better film-forming properties tend to be obtained, and when the content is 25% by mass or less, the curing start temperature tends to decrease.

[0070] The content of component (C) in the second adhesive composition may be 1 to 25% by mass, 3 to 20% by mass, or 5 to 15% by mass, based on the total amount of the second adhesive composition. When the content is 1% by mass or more, there is a tendency to obtain better film-forming properties, and when the content is 25% by mass or less, there is a tendency to lower the curing start temperature.

[0071] In one embodiment, at least one of the first adhesive composition and the second adhesive composition may contain a flux compound (hereinafter sometimes referred to as "component (D)"). Component (D) is a compound having flux activity and has the function of reducing and removing oxide films on surfaces such as solder, thereby facilitating metal bonding.

[0072] The flux compound may be a compound having a carboxyl group (carboxylic acid), or a polycarboxylic acid having two or more carboxyl groups, from the viewpoint of obtaining sufficient flux activity and superior connection reliability. Compared to a compound having one carboxyl group (monocarboxylic acid), polycarboxylic acids are less likely to volatilize at high temperatures during connection, so using polycarboxylic acids can further suppress the generation of voids. Furthermore, among polycarboxylic acids, polycarboxylic acids having two carboxyl groups are superior to polycarboxylic acids having three or more carboxyl groups in suppressing the increase in viscosity of the film adhesive 1 during storage and connection work.

[0073] Specific examples of component (D) include dicarboxylic acids such as succinic acid, glutaric acid, adipic acid, pimelic acid, suberic acid, azelaic acid, sebacic acid, undecanediic acid, and dodecanediic acid, as well as compounds in which an electron-donating group is substituted at the 2 position of these dicarboxylic acids (e.g., 2-methylglutaric acid). These may be used individually or in combination of two or more.

[0074] Component (D) may contain 2-methylglutaric acid, from the viewpoint of obtaining effects such as suppression of fillets, reduction of voids, and improvement of sealing properties when combined with epoxy resin and imidazole-based curing agents.

[0075] The content of component (D) in the first adhesive composition may be 0.1 to 5% by mass, 0.3 to 3% by mass, or 0.5 to 2% by mass, based on the total amount of the first adhesive composition. When the content is 0.1% by mass or more, a better flux effect tends to be obtained, and when the content is 5% by mass or less, the occurrence of warping after curing tends to be suppressed.

[0076] The content of component (D) in the second adhesive composition may be 1 to 25% by mass or more, 3 to 20% by mass or 5 to 15% by mass, based on the total amount of the second adhesive composition. When the content is 1% by mass or more, a better flux effect tends to be obtained, and when the content is 25% by mass or less, the occurrence of warping after curing tends to be suppressed.

[0077] In one embodiment, at least one of the first adhesive composition and the second adhesive composition may further contain other additives such as antioxidants, silane coupling agents, titanium coupling agents, leveling agents, and ion trapping agents. The content of these additives can be adjusted as appropriate so that the effects of each additive are realized.

[0078] The film-like adhesive 1 described above can be manufactured, for example, by a method comprising the steps of: preparing a first adhesive film made of the first adhesive composition and a second adhesive film made of the second adhesive composition; and placing one of the first adhesive film and the second adhesive film on the other.

[0079] The step of preparing the first adhesive film may include forming a first adhesive layer on a substrate (for example, a film-like substrate). When forming the first adhesive layer on a substrate, for example, first, a coating liquid containing the first adhesive composition is prepared by stirring, mixing, kneading, etc., the first adhesive composition and an organic solvent. Then, the coating liquid is applied to the substrate that has been subjected to a release treatment using a knife coater, roll coater, applicator, etc., to form a coating film, and then the organic solvent in the coating film is reduced by heating. This makes it possible to form the first adhesive layer on the substrate.

[0080] The organic solvent used in preparing the coating solution may be one that has the property of uniformly dissolving or dispersing each component. Examples of such organic solvents include dimethylformamide, dimethylacetamide, N-methyl-2-pyrrolidone, dimethyl sulfoxide, diethylene glycol dimethyl ether, toluene, benzene, xylene, methyl ethyl ketone, tetrahydrofuran, ethyl cellosolve, ethyl cellosolve acetate, butyl cellosolve, dioxane, cyclohexanone, and ethyl acetate. These organic solvents can be used individually or in combination of two or more. Stirring, mixing, and kneading during the preparation of the coating solution can be carried out using, for example, a stirrer, a sloshing machine, a three-roll mill, a ball mill, a bead mill, or a homodisper.

[0081] The substrate is not particularly limited as long as it has heat resistance that can withstand the heating conditions when volatilizing organic solvents. Examples include polyolefin films such as polypropylene film and polymethylpentene film, polyester films such as polyethylene terephthalate film and polyethylene naphthalate film, polyimide films, and polyetherimide films. The substrate is not limited to a single layer made of these films, but may also be a multilayer film made of two or more materials. The substrate may also be a film with a release treatment applied to its surface.

[0082] The drying conditions for volatilizing the organic solvent from the coating on the substrate may be conditions that allow the organic solvent to volatilize sufficiently. Specifically, for example, heating may be carried out at 50 to 200°C for 0.1 to 90 minutes. The organic solvent may be removed to 1.5% by mass or less relative to the total amount of the first adhesive layer, provided that it does not affect voids or viscosity adjustment after mounting.

[0083] The step of preparing the second adhesive film may include forming a second adhesive layer on the substrate. The second adhesive layer can be formed on the substrate by the same method as the method for forming the first adhesive layer, except that the second adhesive composition is used instead of the first adhesive composition.

[0084] The step of placing one of the first adhesive film and the second adhesive film on the other may be, for example, a step of bonding the first adhesive film and the second adhesive film together. Examples of methods for bonding the first adhesive film and the second adhesive film together include heat pressing, roll lamination, and vacuum lamination. Lamination may be carried out, for example, under heating conditions of 30 to 120°C.

[0085] The film-like adhesive 1 may be obtained, for example, by forming one of the first adhesive layer and the second adhesive layer on a substrate, and then forming the other of the first adhesive layer and the second adhesive layer on the obtained first adhesive layer or the second adhesive layer. The first adhesive layer and the second adhesive layer can be formed by the method described above.

[0086] The film-like adhesive 1 may be obtained, for example, by substantially simultaneously forming a first adhesive and a second adhesive on a substrate. Examples of methods for simultaneously coating and producing the first adhesive and the second adhesive include sequential coating methods and multilayer coating methods.

[0087] The above describes the film-like adhesive, adhesive tape, and method for manufacturing the film-like adhesive, etc., of this disclosure, using film-like adhesive 1 as an example. However, the film-like adhesive of this disclosure is not limited to the above.

[0088] For example, in Figure 1, only the first and second regions exist in the thickness direction of the film-like adhesive, but one or more other regions other than the first and second regions may exist in the thickness direction of the film-like adhesive. For example, the film-like adhesive may have a third region in its thickness direction that has a different composition from the adjacent regions.

[0089] If the third region is adjacent to one of the first and second regions but not to the other (for example, if the first, second, and third regions are arranged in this order, or if the second, first, and third regions are arranged in this order), the third region has a different composition from the adjacent region (the second region or the first region). In this case, the third region may have the same composition as the other non-adjacent region (the first region or the second region). Also, for example, if the third region is adjacent to both the first and second regions (for example, if the first, third, and second regions are arranged in this order), the third region has a different composition from the first and second regions. In this case, the third region may be, for example, a region composed of a mixture of the first adhesive composition and the second adhesive composition.

[0090] The details of each component that may be included in the adhesive composition constituting the third region (third adhesive composition) are the same as those of the first adhesive composition and the second adhesive composition described above, and the range of content of each component may be the same as in the example of the first adhesive composition and may be the same as in the example of the second adhesive composition.

[0091] Furthermore, for example, in Figure 1, the first and second regions are formed in layers, but the first and second regions do not necessarily have to be layered. The same applies to other regions such as the third region.

[0092] <Semiconductor device> Another embodiment of the present disclosure is a semiconductor device comprising: a semiconductor chip having a first connection portion; a substrate having a second connection portion electrically connected to the first connection portion; and a sealing portion that joins the semiconductor chip and the substrate and fills the gap between the semiconductor chip and the substrate, wherein the sealing portion contains 20 to 70% by mass of thermal conductive filler based on the total mass of the sealing portion, and has a first region and a second region having a lower mass concentration of thermal conductive filler than the first region in the thickness direction.

[0093] The details of the thermally conductive filler (type and median diameter) are the same as those of the thermally conductive filler in the film-like adhesive of the above embodiment.

[0094] The thicknesses of the first region and the second region in the sealing portion may be adjusted so that the ratio of their thickness to the sealing portion falls within a predetermined range. The details (possible range) of the thicknesses of the first region, the second region and the sealing portion, and their ratios, are the same as those of the thicknesses of the first region, the second region and the film-like adhesive, and their ratios, in the above embodiment of the film-like adhesive.

[0095] The details (possible range) of the content of thermal conductive filler in the sealing portion, the mass concentration and ratio of thermal conductive filler in the first and second regions, and the ratio of the amount of thermal conductive filler in each region to the total amount of thermal conductive filler in the sealing portion are the same as the details of the content of thermal conductive filler in the film adhesive, the mass concentration and ratio of thermal conductive filler in the first and second regions, and the ratio of the amount of thermal conductive filler in each region to the total amount of thermal conductive filler in the film adhesive of the above embodiment.

[0096] The sealing portion may contain other fillers. Details of the other fillers are the same as those of the other fillers in the film adhesive of the above embodiment. Furthermore, details (possible ranges) of the content of other fillers in the sealing portion, the mass concentrations and ratios of the other fillers in the first and second regions, and the ratio of the amount of other fillers in each region to the total amount of other fillers in the sealing portion are the same as those of the film adhesive of the above embodiment, including the content of other fillers in the film adhesive, the mass concentrations and ratios of the other fillers in the first and second regions, and the ratio of the amount of other fillers in each region to the total amount of other fillers in the film adhesive.

[0097] The first region of the sealing portion may consist of a cured product of the first adhesive composition in the film-like adhesive of the above embodiment, and the second region of the sealing portion may consist of a cured product of the second adhesive composition in the film-like adhesive of the above embodiment.

[0098] The first and second regions of the sealing portion may extend along the main surface direction of the sealing portion (the direction parallel to the interface between the semiconductor chip and the substrate). That is, the first and second regions may be formed in layers. In this case, a heat conduction path is formed in the horizontal direction via a thermally conductive filler, which tends to result in better heat dissipation. In particular, if the connection between the semiconductor chip and the substrate is made of a highly thermally conductive material, it becomes possible to utilize the connection as the main path for heat conduction, which tends to result in even better heat dissipation.

[0099] The sealing portion may have one or more other regions in its thickness direction, in addition to the first and second regions, similar to the film-like adhesive of the above embodiment. The details of the other regions (arrangement, composition, and shape) are the same as those of the other regions in the film-like adhesive of the above embodiment. For example, the other region may be a region having a different composition from the adjacent region (a third region), and may be a region adjacent to one or both of the first and second regions.

[0100] In one embodiment, the sealing portion may be a cured product of the film-like adhesive of the above embodiment.

[0101] Figure 2 is a schematic cross-sectional view showing one embodiment of a semiconductor device. The semiconductor device 100 shown in Figure 2(a) includes a semiconductor chip 20 and a substrate 25 facing each other, wiring (first connection portion and second connection portion) 15 arranged on the opposing surfaces of the semiconductor chip 20 and the substrate 25, connection bumps 30 that connect the wiring 15 of the semiconductor chip 20 and the substrate 25 to each other, and a sealing portion 40 that fills the gap between the semiconductor chip 20 and the substrate 25. The semiconductor chip 20 and the substrate 25 are flip-chip connected by the wiring 15 and the connection bumps 30. The wiring 15 and the connection bumps 30 are sealed by the sealing portion 40 and isolated from the external environment.

[0102] The semiconductor device 200 shown in Figure 2(b) comprises a semiconductor chip 20 and a substrate 25 facing each other, bumps (first connection portion and second connection portion) 32 arranged on the opposing surfaces of the semiconductor chip 20 and the substrate 25, and a sealing portion 40 that fills the gap between the semiconductor chip 20 and the substrate 25. The semiconductor chip 20 and the substrate 25 are connected via a flip-chip connection by the connection of the opposing bumps 32 to each other. The bumps 32 are sealed by the sealing portion 40, which is made of a cured film-like adhesive, and are isolated from the external environment.

[0103] Examples of semiconductor chips 20 include semiconductor chips made from elemental semiconductors composed of the same type of element, such as silicon and germanium, and semiconductor chips made from compound semiconductors, such as gallium arsenide and indium phosphide.

[0104] The substrate 25 is not particularly limited as long as it is used to mount the semiconductor chip 20. Examples of the substrate 25 include semiconductor chips, semiconductor wafers, wiring circuit boards, etc.

[0105] The semiconductor chip that can be used as the substrate 25 is the same as the semiconductor chip 20, and the same semiconductor chip as the semiconductor chip 20 can be used as the substrate 25.

[0106] The semiconductor wafer that can be used as the substrate 25 may, for example, have a configuration in which multiple semiconductor chips, as exemplified by the semiconductor chip 20, are linked together.

[0107] Examples of wiring circuit boards that can be used as the substrate 25 include circuit boards having wiring (wiring patterns) 15 formed by etching away unnecessary parts of a metal film on the surface of an insulating substrate mainly composed of glass epoxy, polyimide, polyester, ceramic, epoxy, bismaleimidotriazine, etc., circuit boards in which wiring 15 is formed on the surface of an insulating substrate by metal plating or the like, and circuit boards in which wiring 15 is formed by printing a conductive material on the surface of an insulating substrate.

[0108] The connection parts such as the wiring 15 and bumps 32 may contain gold, silver, copper, solder (the main components being, for example, tin-silver, tin-lead, tin-bismuth, tin-copper, tin-silver-copper, etc.), nickel, tin, lead, etc., and may contain multiple metals.

[0109] The main metal component of the connection part may be gold, silver, or copper, or silver or copper, from the viewpoint of obtaining a package with excellent electrical and thermal conductivity of the connection part. The main metal component of the connection part may be silver, copper, or solder, which are inexpensive materials, or copper or solder, or solder, from the viewpoint of obtaining a package with reduced costs. The main metal component of the connection part may be gold, silver, copper, or solder, or gold, silver, or solder, or gold or silver, from the viewpoint of suppressing the formation of an oxide film on the surface of the metal at room temperature (25°C), as this can reduce productivity and increase costs.

[0110] On the surfaces of the wiring 15 and bump 32, a metal layer may be formed, for example by plating, with gold, silver, copper, solder (main components being, for example, tin-silver, tin-lead, tin-bismuth, tin-copper, etc.), tin, nickel, etc. as the main components. This metal layer may consist of only a single component or multiple components. Furthermore, the metal layer may have a single layer or a structure in which multiple metal layers are laminated.

[0111] The sealing portion 40 is, for example, a cured product of the film-like adhesive 1. The sealing portion 40 has a first region 40a and a second region 40b. The first region 40a includes, for example, a cured product of the first adhesive composition, and the second region 40b includes a cured product of the second adhesive composition.

[0112] A semiconductor device may be a stack of multiple structures (packages) as shown in semiconductor devices 100 and 200. In this case, semiconductor devices 100 and 200 may be electrically connected to each other by bumps, wiring, etc., containing gold, silver, copper, solder (main components of which are, for example, tin-silver, tin-lead, tin-bismuth, tin-copper, tin-silver-copper, etc.), tin, nickel, etc.

[0113] As a method for stacking multiple semiconductor devices, as shown in Figure 3, one example is the TSV (Through-Silicone Via) technology. In the semiconductor device 500 shown in Figure 3, the semiconductor chip 20 and the interposer 50 are connected via a flip-chip connection by connecting the wiring 15 formed on the interposer 50 to the wiring 15 of the semiconductor chip 20 via connecting bumps 30. The gap between the semiconductor chip 20 and the interposer 50 is filled with a cured film-like adhesive, forming a sealing portion 40. On the surface of the semiconductor chip 20 opposite to the interposer 50, semiconductor chips 20 are repeatedly stacked via the wiring 15, connecting bumps 30, and sealing portion 40. The wiring 15 on the pattern surfaces on the front and back of the semiconductor chip 20 are connected to each other by through-electrodes 34 filled in holes that penetrate the inside of the semiconductor chip 20. The material of the through-electrodes 34 can be copper, aluminum, etc.

[0114] This TSV technology makes it possible to acquire signals from the back surface of semiconductor chips that are not normally used. Furthermore, because the through-electrode 34 is passed vertically through the semiconductor chip 20, the distance between opposing semiconductor chips 20 and between the semiconductor chip 20 and the interposer 50 is shortened, enabling flexible connections. The semiconductor film adhesive of this embodiment can be applied as a semiconductor film adhesive between opposing semiconductor chips 20 and between the semiconductor chip 20 and the interposer 50 in this TSV technology.

[0115] Furthermore, with highly flexible bump formation methods such as area bump chip technology, semiconductor chips can be directly mounted to the motherboard without the need for an interposer. The semiconductor film adhesive of this embodiment can also be applied when directly mounting such semiconductor chips to a motherboard. In addition, the semiconductor film adhesive of this embodiment can also be applied when sealing gaps (air spaces) between two wiring circuit boards when stacking them.

[0116] <Method for Manufacturing a Semiconductor Device> Another embodiment of the present disclosure is a method for manufacturing a semiconductor device, comprising the step of heating and joining a semiconductor chip and a substrate in a state in which their connection portions face each other via a semiconductor film adhesive of the above embodiment.

[0117] The above process may be a process of electrically connecting the connection portion of the semiconductor chip to the connection portion of the substrate, and sealing the gap between the semiconductor chip and the substrate.

[0118] A method for manufacturing a semiconductor device may include, for example, a step of preparing a semiconductor chip with a film-like adhesive, comprising a semiconductor chip and a semiconductor film-like adhesive provided on the semiconductor chip according to the above embodiment. In this case, the semiconductor chip with the film-like adhesive may be placed on a substrate from the film-like adhesive side, heated and optionally pressurized, thereby electrically connecting the connection portion of the semiconductor chip to the connection portion of the substrate and sealing the gap between the semiconductor chip and the substrate.

[0119] The method for manufacturing a semiconductor device may further include a step of attaching the semiconductor film adhesive of the above embodiment to the connection surface of a semiconductor chip or its precursor. Here, the semiconductor chip precursor refers to a component that becomes a semiconductor chip through processing. A specific example of a semiconductor chip precursor is a semiconductor wafer. When a semiconductor wafer is used as the semiconductor chip precursor, the method for manufacturing a semiconductor device may further include a step of dicing the semiconductor wafer or the semiconductor wafer with the film adhesive attached.

[0120] In the method for manufacturing a semiconductor device, the adhesive tape with adhesive tape described above may be used. The adhesive tape with adhesive tape may be attached to the connection surface of a semiconductor wafer before the backgrinding process, or to the connection surface of a semiconductor wafer after the backgrinding process. That is, the method for manufacturing a semiconductor device may further include a lamination step in which the adhesive tape is attached from the semiconductor film-like adhesive side to the connection surface of a semiconductor wafer (a semiconductor wafer before or after the backgrinding process), which is a precursor of a semiconductor chip. In the latter case, the adhesive tape may be a backgrind tape, and the method for manufacturing a semiconductor device may further include a backgrinding step in addition to the lamination step in which the semiconductor wafer to which the adhesive tape is attached is ground from the side opposite to the adhesive tape. Furthermore, when using the adhesive tape with adhesive tape described above, the method for manufacturing a semiconductor device may further include a step of peeling off the adhesive tape.

[0121] The following section will provide a more detailed explanation of the manufacturing method for semiconductor devices, using a semiconductor chip precursor (semiconductor wafer) as an example.

[0122] Figures 4, 5, 6, 7, and 8 are schematic cross-sectional views illustrating one embodiment of a semiconductor device manufacturing method. The semiconductor device manufacturing method of one embodiment includes the following steps (a) to (e). Step (a): A step of preparing a laminate 6 comprising a semiconductor wafer A having a connecting portion (first connecting portion) 5 on one main surface (connecting surface), and a film-like adhesive 1 provided on the main surface of the semiconductor wafer A such that the surface on the first region 2 side faces the semiconductor wafer A (see Figure 4). Step (b): A back-grinding step of grinding the side of the laminate 6 opposite to the side on which the film-like adhesive 1 is provided (the side opposite to the side on which the connecting portion 5 of the semiconductor wafer A is provided) (see Figure 5). Step (c): A step of separating the laminate 6 into individual pieces to obtain a semiconductor chip 8 with film-like adhesive having a connecting portion 5 (see Figure 6). Step (d): A step of picking up the film-like adhesive semiconductor chip 8 from the side of the separated film-like adhesive 1a (see Figure 7). Step (e): The semiconductor chip 8 with film adhesive is placed on the main surface (connecting surface) of a substrate 9 having a connecting portion (second connecting portion) 10 on one of its main surfaces, starting from the side with the film adhesive 1a, and heated to electrically connect the connecting portion 5 of the semiconductor chip 8 with film adhesive to the connecting portion 10 of the substrate 9, and to seal the gap between the semiconductor chip 8 with film adhesive and the substrate 9 (see Figure 8). Note that if a semiconductor wafer with a pre-adjusted thickness is used, step (b) may not be performed.

[0123] (Step (a)) Step (a) may be a step of preparing a pre-fabricated laminate 6, or it may be a step of manufacturing the laminate 6. The laminate 6 may be manufactured, for example, by the following method.

[0124] First, an adhesive tape is prepared in which a base material 4 is provided on the second region 3 side of the film-like adhesive 1, and this is placed in a predetermined apparatus (see Figure 4(a)). The base material 4 is, for example, a backgrind tape. Next, a semiconductor wafer A having a connection portion 5 (wiring, bump, etc.) on one main surface is prepared, and the film-like adhesive 1 is attached to the main surface of the semiconductor wafer A (the surface on which the connection portion 5 is provided, the connection surface). As a result, a laminate 6 in which the semiconductor wafer A, the first region 2, and the second region 3 are stacked in this order is provided on the base material 4 (see Figure 4(b)).

[0125] The film-like adhesive 1 can be applied by heat pressing, roll lamination, vacuum lamination, etc. The supply area and thickness of the film-like adhesive 1 are appropriately set according to the size of the semiconductor wafer and substrate, the height of the connection part, etc. In Figure 4, the thickness of the film-like adhesive 1 is greater than the height of the connection part 5 of the semiconductor wafer A, and the connection part 5 is covered with the film-like adhesive 1, but the thickness of the film-like adhesive 1 may be less than the height of the connection part 5.

[0126] (Step (b)) In step (b), for example, the semiconductor wafer A of the laminate 6 is ground using a grinder G (see Figures 5(a) and (b)). This thins the semiconductor wafer A. The thickness of the semiconductor wafer after grinding may be, for example, 10 to 300 μm. From the viewpoint of miniaturizing and thinning semiconductor devices, the thickness of the semiconductor wafer may be 20 to 100 μm.

[0127] (Step (c)) In step (c), for example, first, a dicing tape 7 is attached to the semiconductor wafer A side of the laminate 6, and this is placed in a predetermined apparatus (see Figure 6(a)). The substrate 4 may be peeled off before or after attaching the laminate 6 to the dicing tape 7. Next, the laminate 6 is diced with a dicing saw D. In this way, the laminate 6 is divided into individual pieces, and a semiconductor chip 8 with a film-like adhesive, which has a film-like adhesive 1a on the semiconductor chip A', is obtained (see Figure 6(b)). A connecting portion 5 is provided on the side of the semiconductor chip A' that has the film-like adhesive 1a. The film-like adhesive 1a has a first region (a region consisting of the first adhesive composition) 2a and a second region (a region consisting of the second adhesive composition) 3a.

[0128] (Step (d)) In step (d), for example, the dicing tape 7 is expanded to separate the film-adhesive semiconductor chips 8 obtained by the dicing process, and the film-adhesive semiconductor chips 8 that have been pushed up from the dicing tape 7 side by the needle N are picked up from the film-adhesive 1a side by the pick-up tool P (see Figure 7). The picked-up film-adhesive semiconductor chips 8 are then transferred to the bonding tool and used for bonding in step (e).

[0129] (Step (e)) In step (e), for example, first, a substrate 9 for mounting a semiconductor chip having a connection portion 10 (second connection portion) on one side is prepared, and the semiconductor chip 8 with film adhesive and the substrate 9 are aligned. Next, using a bonding tool, the semiconductor chip 8 with film adhesive is placed on the main surface of the substrate 9 where the connection portion 10 (wiring, bumps, etc.) is provided, from the film adhesive 1a side, and heated to bond the semiconductor chip 8 with film adhesive and the substrate 9 (see Figures 8(a) and (b)). As a result, the connection portion 5 of the semiconductor chip 8 with film adhesive and the connection portion 10 of the substrate 9 are electrically connected, and a sealing portion 1a' made of cured film adhesive 1a is formed between the semiconductor chip A' and the substrate 9, sealing the gap between the semiconductor chip 8 with film adhesive and the substrate 9, and a semiconductor device 11, which is a bond of the semiconductor chip 8 with film adhesive and the substrate 9, is obtained. The sealing portion 1a' has a first region (a region containing a cured product of the first adhesive composition) 2a' and a second region (a region containing a cured product of the second adhesive composition) 3a'.

[0130] When a solder bump is used on either the connection part 5 or the connection part 10 (for example, when the connection part 5 or the connection part 10 is a wire with a solder bump), the connection part 5 and the connection part 10 are electrically and mechanically connected by soldering.

[0131] The heating in step (e) may be performed while the semiconductor chip is being placed, or after the semiconductor chip has been placed. The heating and placement in step (e) may be performed by thermocompression bonding. Step (e) may include a step of temporarily fixing the chip after alignment (temporary fixing step) and a step of joining the semiconductor chip A' and the substrate 9 and sealing the connection by melting the bumps (e.g., solder bumps) provided at the connection by heat treatment (sealing step). Since it is not necessarily required to form a metal bond at the temporary fixing stage, the temporary fixing step can be carried out with low load, short time, and low temperature. Therefore, when the temporary fixing step and the sealing step are carried out in step (e), productivity can be improved and deterioration of the connection can be suppressed.

[0132] The load applied for temporary fixing is set appropriately, taking into consideration the number of connection points (bumps), the absorption of variations in the height of the connection points (bumps), and the amount of deformation of the connection points (bumps). From the viewpoint of eliminating voids and facilitating contact between the connection points, the load may be, for example, 0.009 to 0.2 N per connection point (e.g., bump).

[0133] Heating during the sealing process may be performed using equipment capable of heating above the melting point of the metal at the connection point. The heating temperature may be the temperature at which the film adhesive begins to harden, or it may be the temperature at which it hardens completely. The heating temperature and heating time can be set as appropriate.

[0134] The heating time in the sealing process varies depending on the type of metal that makes up the connection, but from the viewpoint of improving productivity, it may be short. When solder bumps are used in the connection, the heating time may be 20 seconds or less, 10 seconds or less, or 5 seconds or less. In the case of copper-copper or copper-gold metal connections, the connection time may be 60 seconds or less.

[0135] In the sealing process, heating and pressurization may be performed simultaneously using a device capable of both heating and pressurization. That is, heating in the sealing process may be done by thermocompression bonding. In this case, the load (connecting load) is set considering the size of the connecting members, the number of connection points, variations in height, the amount of deformation of the connection points due to pressurization, etc. The connecting load may be, for example, above atmospheric pressure and 1 MPa or less. From the viewpoint of void suppression and improved connectability, the load may be 0.05 to 0.5 MPa. The crimping time (connecting time) varies depending on the type of metal constituting the connection point, but from the viewpoint of improving productivity, it may be short. If the connection point is a solder bump, the crimping time may be 20 seconds or less, 10 seconds or less, or 5 seconds or less. Note that with direct pressurization using a crimping machine, the heat from the crimping machine is not easily transferred to the fillet. Therefore, from the viewpoint of sufficiently hardening the fillet, pressurization by air pressure may be used. From the viewpoint of batch sealing, pressurization during heating may also be pressurization by air pressure (pressurization by a pressurized reflow oven, pressurized oven, etc.).

[0136] After connecting the semiconductor chip A' and the substrate 9, the connection reliability may be further improved by performing a heat treatment in an oven or the like.

[0137] The present disclosure will be described in more detail below with reference to examples, but the present disclosure is not limited to these examples.

[0138] <Material Preparation> The following materials were prepared: [Thermally conductive fillers] (X-1): Aluminum oxide particles (manufactured by Sumitomo Chemical Co., Ltd., product name: AA07N, median diameter (D50) 0.7 μm) (X-2): Aluminum oxide particles (manufactured by Sumitomo Chemical Co., Ltd., product name: AA04N, median diameter (D50) 0.4 μm) (X-3): Aluminum oxide particles (manufactured by Admatex Co., Ltd., product name: A14-SP-C6, median diameter (D50) 3 μm) (X-4): Aluminum oxide particles (manufactured by Sumitomo Chemical Co., Ltd., product name: AA15N, median diameter (D50) 1.5 μm, polyhedral alumina filler) (X-5): Aluminum oxide particles (manufactured by Admatex Co., Ltd., product name: A23-SP-C1, median diameter (D50) 1.5 μm, spherical alumina filler) (X-6): Hexagonal boron nitride particles (manufactured by Resonaq Corporation, product name: UHP-S2, median diameter (D50) 0.7 μm)

[0139] [Other fillers] (Y-1): Silica filler (manufactured by Admatex Co., Ltd., product name: KE180G-HLA, solid content concentration 60% by mass) (Y-2): Core-shell type organic microparticles (manufactured by Rohm & Haas Japan Co., Ltd., product name: EXL-2655)

[0140] [Solid epoxy resin] (A1-1): Triphenolmethane skeleton-containing polyfunctional solid epoxy resin (manufactured by Mitsubishi Chemical Corporation, product name: jER1032H60, "jER" is a registered trademark (hereinafter the same), epoxy equivalent: 163-175 g / eq, softening point: 62°C)

[0141] [Liquid Epoxy Resins] (A2-1): Bisphenol F type liquid epoxy resin (manufactured by Mitsubishi Chemical Corporation, product name: jERYL983U, epoxy equivalent: 165-175 g / eq) (A2-2): Flexible epoxy resin (manufactured by Mitsubishi Chemical Corporation, product name: jERYX7110B80, epoxy equivalent: 950-1250 g / eq, solids content: 80% by mass)

[0142] [Hardening agent] (B-1): 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine isocyanurate adduct (manufactured by Shikoku Chemicals, Inc., product name: 2MAOK-PW)

[0143] [Thermoplastic Resin] (C-1): Phenoxy resin (Phenoxy resin, manufactured by Nippon Steel Chemical & Material Co., Ltd., product name: ZX-1356-2, Tg: approx. 71°C, weight-average molecular weight Mw: approx. 63,000)

[0144] [Flux Compound] (D-1): 2-methylglutaric acid (manufactured by Aldrich, melting point: approximately 78°C)

[0145] <Examples 1-7> (Preparation of the first adhesive film) The components shown in Table 1 were added to an organic solvent (cyclohexanone) so that the NV value ([mass of paint after drying] / [mass of paint before drying] × 100) was 44% to obtain a mixture. In Examples 1-5, the amount of each component added was as shown in Composition A of Table 1 (unit: parts by mass), in Example 6, the amount of each component added was as shown in Composition B of Table 1 (unit: parts by mass), and in Example 7, the amount of each component added was as shown in Composition C of Table 1 (unit: parts by mass). The thermally conductive fillers used in each example and comparative example are as shown in Table 2. Note that the amounts of each component shown in Table 1 are the total amounts, and the amount of solvent is included in (A2-2).

[0146] Subsequently, Φ1.0 mm beads and Φ2.0 mm beads were added to the above mixture and stirred for 30 minutes using a bead mill (Fritsch Japan Co., Ltd., planetary type fine grinder P-7). The amount of beads added was equal in mass to the non-volatile content of the mixture (total amount of components other than organic solvents). After stirring, the beads were removed by filtration. This yielded coating solutions 1A to 7A for forming the first adhesive layer.

[0147] Using the obtained coating solutions 1A to 7A, first adhesive films (first adhesive films 1A to 7A) each having a first adhesive layer 1A to 7A were obtained. Specifically, first, the coating solution was applied to a base film (manufactured by Teijin Film Solutions Limited, product name "Purex A54") using a small precision coating device (Ken'i Seiki) so that the film thickness after drying would be 5.0 μm. Next, the coating film was dried in a clean oven (manufactured by ESPEC) at 80°C for 10 min to obtain first adhesive films having a first adhesive layer.

[0148]

[0149]

[0150] (Preparation of the second adhesive film) The components shown in Table 3 were added to an organic solvent (cyclohexanone) to obtain a mixture so that the NV value was 53%. At this time, the amount of each component added was as shown in Table 3 (unit: parts by mass). Then, Φ1.0 mm beads and Φ2.0 mm beads were added to the mixture and stirred for 30 minutes using a bead mill (Fritsch Japan Co., Ltd., planetary type fine grinder P-7). The amount of beads added was equal to the mass of the non-volatile content of the mixture (total amount of components other than the organic solvent). After stirring, the beads were removed by filtration to obtain coating liquid 1B for forming the second adhesive layer.

[0151] The obtained coating solution 1B was applied to a base film (manufactured by Teijin Film Solutions Limited, product name "Purex A54") using a small precision coating apparatus (Ken'i Seiki) to a dry film thickness of 3.1 μm. The coating film was then dried in a clean oven (manufactured by ESPEC) at 80°C for 10 min to obtain a second adhesive film 1B comprising a second adhesive layer 1B. Note that the amounts of additives shown in Table 3 are the total amounts of each component, and the amounts of (Y-1) and (A2-2) include the amount of solvent.

[0152]

[0153] (Preparation of film-like adhesives) The first adhesive films (1A to 7A) and the second adhesive film 1B prepared above were laminated at a lamination temperature of 50°C to create the first adhesive layer and the second adhesive layer, thereby producing the film-like adhesives (total thickness 8.1 μm) of Examples 1 to 7. The film-like adhesive has a first region made of the first adhesive film and a second region made of the second adhesive film in the thickness direction. The mass ratio of the first adhesive film to the second adhesive film was 2:1. In Examples 1 to 5, the content of thermally conductive filler, the content of other fillers, and the content of silica, based on the total mass of the film-like adhesive, were 40% by mass, 17% by mass, and 12% by mass, respectively. In Example 6, the content of thermally conductive filler, other fillers, and silica, based on the total mass of the film-like adhesive, was 47% by mass, 16% by mass, and 12% by mass, respectively. In Example 7, the content of thermally conductive filler, other fillers, and silica, based on the total mass of the film-like adhesive, was 36% by mass, 17% by mass, and 12% by mass, respectively.

[0154] <Comparative Examples 1-3> Film-like adhesives of Comparative Examples 1-3 were obtained using coating solutions 1A, 2A, and 7A obtained in Examples 1, 2, and 7, respectively. Specifically, first, the coating solution was applied to a base film (manufactured by Teijin Film Solutions Limited, product name "Purex A54") using a small precision coating device (Ken'i Seiki) so that the film thickness after drying was 8.1 μm. Next, the coating film was dried in a clean oven (manufactured by ESPEC) (80°C / 10 min) to obtain a film-like adhesive.

[0155] <Evaluation of Film-Type Adhesives> (Measurement of Minimum Melt Viscosity and Melting Temperature) The minimum melt viscosity and the temperature at which this minimum melt viscosity is observed (melting temperature) of the film-type adhesives of Examples 1 to 7 and Comparative Examples 1 to 3 were measured using a rotary rheometer (TA Instruments, product name: ARES-G2) under the following measurement conditions. A measurement value of 2500 Pa·s or less was considered to indicate a sufficiently low minimum melt viscosity. The results are shown in Table 4. (Measurement conditions) ・Heating rate: 10°C / min ・Frequency: 10 Hz ・Temperature range: 30 to 170°C

[0156] (Measurement of Thermal Conductivity) The thermal conductivity of the film-like adhesives of Examples 1 to 7 and Comparative Examples 1 to 3 was measured using a xenon flash analyzer (LFA467 HyperFlash, Netzsch) after curing the film-like adhesive in a pressure oven at 200°C, 0.8 MPa, and for 1 hour. A measurement value of 0.2 W / m·K or higher was considered to indicate high thermal conductivity. The results are shown in Table 4.

[0157]

[0158] 1, 1a... Film-like adhesive for semiconductors, 2, 2a... First region, 3, 3a... Second region, 4... Substrate, 5... Connection part (first connection part), 9... Base body, 10... Connection part (first connection part), 11... Semiconductor device, 15... Wiring (first and second connection parts), 20... Semiconductor chip, 25... Base body, 30... Connection bump, 32... Bump (first and second connection parts), 40... Sealing part, 100, 200, 500... Semiconductor device, A... Semiconductor wafer, A'... Semiconductor chip.

Claims

1. A semiconductor film adhesive containing a thermally conductive filler, wherein the content of the thermally conductive filler is 20 to 70% by mass based on the total mass of the film adhesive, and the film adhesive has, along the thickness direction, a first region made of a first adhesive composition and a second region made of a second adhesive composition, the mass concentration of the thermally conductive filler being lower than that of the first region.

2. The semiconductor film adhesive according to claim 1, wherein the ratio of the mass concentration of the thermally conductive filler in the second region to the mass concentration of the thermally conductive filler in the first region is 0.5 or less.

3. The semiconductor film adhesive according to claim 1, wherein the mass concentration of the thermally conductive filler in the first region is 30 to 85% by mass, and the mass concentration of the thermally conductive filler in the second region is 0 to 50% by mass.

4. The semiconductor film adhesive according to claim 1, wherein the ratio of the amount of thermal conductive filler contained in the first region to the total amount of thermal conductive filler contained in the film adhesive is 0.4 to 1.0 by mass ratio, and the ratio of the amount of thermal conductive filler contained in the second region to the total amount of thermal conductive filler contained in the film adhesive is 0 to 0.6 by mass ratio.

5. The semiconductor film adhesive according to claim 1, wherein the ratio of the thickness of the first region to the thickness of the film adhesive is 0.3 to 0.9, and the ratio of the thickness of the second region to the thickness of the film adhesive is 0.1 to 0.

7.

6. The semiconductor film adhesive according to claim 1, wherein the thermally conductive filler comprises at least one selected from the group consisting of aluminum oxide and boron nitride.

7. The semiconductor film adhesive according to claim 1, wherein the median diameter of the thermally conductive filler is 0.1 to 5 μm.

8. The semiconductor film adhesive according to claim 1, further comprising a filler other than the thermally conductive filler.

9. The semiconductor film adhesive according to claim 8, wherein the other filler includes silica.

10. The semiconductor film adhesive according to claim 8, wherein the content of the other filler is 0 to 50% by mass based on the total mass of the film adhesive.

11. The semiconductor film adhesive according to claim 8, wherein the ratio of the mass concentration of the other filler in the first region to the mass concentration of the other filler in the second region is 0.5 or less.

12. The semiconductor film adhesive according to claim 1, wherein the first adhesive composition and the second adhesive composition each contain a thermosetting resin, a curing agent, and a thermoplastic resin.

13. The semiconductor film adhesive according to claim 1, wherein at least one of the first adhesive composition and the second adhesive composition contains a flux compound.

14. A non-conductive film-like adhesive for semiconductors according to claim 1.

15. A semiconductor film adhesive according to claim 1, used for joining a semiconductor chip to a substrate and sealing the gap between the semiconductor chip and the substrate.

16. A method for manufacturing a film-like adhesive for semiconductors according to any one of claims 1 to 15, comprising the steps of: preparing a first adhesive film made of the first adhesive composition and a second adhesive film made of the second adhesive composition; and providing one of the first adhesive film and the second adhesive film on the other.

17. An adhesive tape comprising a semiconductor film adhesive according to any one of claims 1 to 15, and an adhesive tape provided on the film adhesive.

18. The adhesive tape according to claim 17, wherein the film-like adhesive and the adhesive tape are laminated such that the surface of the film-like adhesive facing the second region faces the adhesive tape side.

19. A method for manufacturing a semiconductor device, comprising the step of heating and joining a semiconductor chip and a substrate in a state where their connection portions face each other via a semiconductor film adhesive described in any one of claims 1 to 15.

20. A semiconductor device comprising: a semiconductor chip having a first connection portion; a substrate having a second connection portion electrically connected to the first connection portion; and a sealing portion that joins the semiconductor chip and the substrate and fills the gap between the semiconductor chip and the substrate, wherein the sealing portion contains a thermal conductive filler in an amount of 20 to 70% by mass, based on the total mass of the sealing portion, and has a first region and a second region having a lower mass concentration of the thermal conductive filler than the first region in the thickness direction.

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