Surface-treated stainless steel material and bonded body

A surface-treated stainless steel material with controlled silicon concentration and decrease in silicon depth enhances adhesive strength and durability, addressing long-term strength reduction issues in adhesive bonding under harsh conditions.

WO2026105486A1PCT designated stage Publication Date: 2026-05-21KOBE STEEL LTD
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Patent Information

Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
KOBE STEEL LTD
Filing Date
2025-09-30
Publication Date
2026-05-21

AI Technical Summary

Technical Problem

Adhesive bonding between dissimilar materials like steel and lightweight metals in transportation machines faces issues with long-term strength reduction due to water penetration and corrosion, especially under high temperature and humidity, leading to reduced adhesive durability.

Method used

A surface-treated stainless steel material with a silane film on its surface, where the atomic concentration of silicon is controlled between 4.0% and 30.0% in the outermost region and the silicon concentration decreases by at least 55% at a depth of 10 nm, enhancing adhesive strength and durability.

Benefits of technology

The surface-treated stainless steel material maintains excellent adhesive strength and durability even in harsh environments, preventing water penetration and corrosion, thus improving the longevity of adhesive bonds.

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Abstract

The present invention provides: a surface-treated stainless steel material that is suitably used for adhesive bonding and capable of further improving durability of adhesion with another member or the like; and a bonded body comprising this surface-treated stainless steel material. The surface-treated stainless steel material is provided with a silane film on at least a portion of a surface of a base material formed from stainless steel, wherein when element distribution is measured by glow discharge emission spectroscopy with respect to a region R1 on the outermost surface and a region R2 at a depth of 10 nm from the region R1 in a region provided with the silane film, the atomic silicon concentration in the region R1 is 4.0 atomic % to 30.0 atomic %. Moreover, the reduction rate M of the silicon concentration calculated by formula (1) on the basis of the atomic silicon concentration A1 of the region R1 and the atomic silicon concentration A2 of the region R2 is greater than or equal to 55%. M = ((A1-A2 / A1) x (100) ... (1)
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