Plasma processing apparatus and protective member

Abstract

Provided are a plasma processing apparatus and a protective member that suppress wear of a bonding layer.　A plasma processing apparatus comprising a base disposed in a plasma processing chamber, an electrostatic chuck disposed on an upper portion of the base, a bonding layer disposed between the base and the electrostatic chuck, and a protective member disposed so as to surround the periphery of the bonding layer, wherein the protective member includes a first annular member surrounding the periphery of the bonding layer, and a second annular member covering the outer peripheral surface of the first annular member and having greater strength than the first annular member.

Description

Plasma processing apparatus and protective member

[0001] The present disclosure relates to a plasma processing apparatus and a protective member.

[0002] Patent Document 1 discloses an annular protective ring made of an elastic member attached to an annular groove formed on the abutting adhesive surface between a first cylindrical member and a second cylindrical member, the protective ring including a belt-like ring body and a protrusion that bulges from the center in the inner surface width direction of the ring body and is pressed against the annular groove, the protrusion being continuously formed in a semi-circular cross-sectional shape having a diameter smaller than the width of the ring body, and the width of the ring body being larger than the radial thickness of the protective ring.

[0003] Japanese Patent Application Laid-Open No. 2023-81419

[0004] In one aspect, the present disclosure provides a plasma processing apparatus and a protective member that suppress the consumption of the bonding layer.

[0005] To solve the above problems, according to one aspect, there is provided a plasma processing apparatus including a base disposed in a plasma processing chamber, an electrostatic chuck disposed above the base, a bonding layer disposed between the base and the electrostatic chuck, and a protective member disposed so as to surround the periphery of the bonding layer, the protective member having a first annular member that surrounds the periphery of the bonding layer and a second annular member having a greater strength than the first annular member that covers the outer peripheral surface of the first annular member.

[0006] According to one aspect, it is possible to provide a plasma processing apparatus and a protective member that suppress the consumption of the bonding layer.

[0007] An example of a diagram illustrating the configuration of a plasma processing system. An example of a diagram illustrating the configuration of a capacitively coupled plasma processing apparatus. An example of a partially enlarged cross-sectional view showing the structure of the main body of the substrate support. An example of a view of the protective member from above. A diagram showing an example of the shape of the first annular member. A diagram showing an example of the shape of the first annular member. A diagram showing an example of the shape of the first annular member. A diagram showing an example of the shape of the second annular member. A diagram showing an example of the shape of the second annular member. An example of a diagram showing the coupling structure of the second annular member. An example of a diagram showing the coupling structure of the second annular member.

[0008] Various exemplary embodiments will be described in detail below with reference to the drawings. In each drawing, the same or corresponding parts will be denoted by the same reference numerals.

[0009] [Plasma Processing System] Figure 1 is an example of a diagram illustrating an example of the configuration of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing apparatus 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing apparatus 1 is an example of a substrate processing apparatus. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support unit 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space, and at least one gas outlet for discharging gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20, which will be described later, and the gas outlet is connected to an exhaust system 40, which will be described later. The substrate support unit 11 is located in the plasma processing space and has a substrate support surface for supporting a substrate.

[0010] The plasma generation unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), ECR (Electron Cyclotron Resonance) plasma, helicon wave excited plasma (HWP), or surface wave plasma (SWP), etc. Various types of plasma generation units, including AC (Alternating Current) plasma generation units and DC (Direct Current) plasma generation units, may also be used. In one embodiment, the AC signal (AC power) used in the AC plasma generation unit has a frequency in the range of 100 kHz to 10 GHz. Therefore, the AC signal includes an RF (Radio Frequency) signal and a microwave signal. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0011] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform the various processes described herein. The control unit 2 may be configured to control the elements of the plasma processing apparatus 1 to perform the various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 is implemented, for example, by a computer 2a. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The functions realized by the processing unit 2a1 described herein may be implemented in a circuit or processing circuit, including a general-purpose processor, an application-specific processor, integrated circuits, ASICs (Application Specific Integrated Circuits), a CPU (Central Processing Unit), a conventional circuit, and / or a combination thereof, programmed to realize the described functions. The processor is considered to be a circuit or processing circuit, including transistors and other circuits. The processor may be a programmed processor that executes a program stored in the storage unit 2a2. This program may be pre-stored in the storage unit 2a2 or retrieved via a medium when needed. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 and executed by the processing unit 2a1. The medium may be various storage media readable by the computer 2a, or it may be a communication line connected to the communication interface 2a3. The storage unit 2a2 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing device 1 via a communication line such as a LAN (Local Area Network).In this disclosure, circuits, units, and means are hardware programmed to perform or configured to perform the functions described. Such hardware may be any hardware described in this disclosure, or any hardware known to be programmed to perform or execute the functions described. If such hardware is a processor that is considered to be a type of circuit, such circuit, means, or unit is a combination of hardware and software used to constitute such hardware and / or processor.

[0012] [Plasma Processing Equipment] Below, an example of the configuration of a capacitively coupled plasma processing equipment as an example of plasma processing equipment 1 will be described. Figure 2 is an example of a diagram illustrating the configuration of a capacitively coupled plasma processing equipment 1.

[0013] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply system 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support unit 11 and a gas introduction unit. The gas introduction unit is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas introduction unit includes a shower head 13. The substrate support unit 11 is located inside the plasma processing chamber 10. The shower head 13 is located above the substrate support unit 11. In one embodiment, the shower head 13 constitutes at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the shower head 13, the side walls 10a of the plasma processing chamber 10, and the substrate support unit 11. The plasma processing chamber 10 is grounded. The shower head 13 and the substrate support unit 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0014] The substrate support portion 11 includes a main body portion 111 and a ring assembly 112. The main body portion 111 has a central region 111a for supporting the substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body portion 111 surrounds the central region 111a of the main body portion 111 in a plan view. The substrate W is placed on the central region 111a of the main body portion 111, and the ring assembly 112 is placed on the annular region 111b of the main body portion 111 so as to surround the substrate W on the central region 111a of the main body portion 111. Therefore, the central region 111a is also called the substrate support surface for supporting the substrate W, and the annular region 111b is also called the ring support surface for supporting the ring assembly 112.

[0015] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is placed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic chuck electrode 1111b placed within the ceramic member 1111a. The electrostatic chuck electrode 1111b is also called a clamping electrode. In one embodiment, the electrostatic chuck electrode 1111b is electrically connected or coupled to a chuck power supply. The chuck power supply may be a DC power supply or an AC power supply. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Furthermore, other members surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member, may have an annular region 111b. In this case, the ring assembly 112 may be placed on the annular electrostatic chuck or the annular insulating member, or it may be placed on both the electrostatic chuck 1111 and the annular insulating member. In addition, at least one bias electrode, which is electrically connected or coupled to the power supply 31 and / or power supply 32 described later, may be placed inside the ceramic member 1111a. In this case, at least one bias electrode functions as a lower electrode. Also, the conductive member of the base 1110 and the bias electrode inside the ceramic member 1111a may function as multiple lower electrodes. In one embodiment, the first voltage generation unit 32a, which functions as a voltage pulse generation unit described later, is electrically connected or coupled to the bias electrode inside the ceramic member 1111a, and the first RF generation unit 31a, described later, is electrically connected or coupled to the conductive member of the base 1110. Furthermore, the electrostatic chuck electrode 1111b may function as a lower electrode. Therefore, the substrate support portion 11 includes at least one lower electrode.

[0016] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one covering ring. The edge rings are formed of a conductive or insulating material, and the covering rings are formed of an insulating material.

[0017] The substrate support section 11 may also include a temperature control module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate W to a target temperature. The temperature control module may include a heater, a heat transfer medium, a flow path 1110a, or a combination thereof. A heat transfer fluid such as brine or gas flows through the flow path 1110a. In one embodiment, the flow path 1110a is formed within the base 1110, and one or more heaters are arranged within the ceramic member 1111a of the electrostatic chuck 1111. The substrate support section 11 may also include a heat transfer gas supply section configured to supply heat transfer gas to the gap between the back surface of the substrate W and the central region 111a.

[0018] The showerhead 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas inlet ports 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s through the plurality of gas inlet ports 13c. The showerhead 13 also includes at least one upper electrode. In addition to the showerhead 13, the gas introduction unit may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the side wall 10a.

[0019] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one processing gas to the shower head 13 from a corresponding gas source 21 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 20 may include at least one flow modulation device that modulates or pulses the flow rate of at least one processing gas.

[0020] The power supply system 30 includes a power supply 31 that is electrically connected to or coupled to the plasma processing chamber 10. In one embodiment, the power supply 31 is electrically connected to or coupled to the plasma processing chamber 10 via at least one impedance matcher. The impedance matcher may be a mechanically controlled matcher or an electronically controlled matcher. The power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates plasma from at least one processing gas supplied to the plasma processing space 10s. Therefore, the power supply 31 can function as at least part of the plasma generation unit 12. In addition, by supplying a bias RF signal to at least one lower electrode, a bias potential is generated on the substrate W, and ionic components in the formed plasma can be drawn into the substrate W.

[0021] The power supply 31 includes a first RF generation unit 31a and a second RF generation unit 31b. The first RF generation unit 31a is electrically connected or coupled to at least one lower electrode and / or at least one upper electrode and is configured to generate a source RF signal (source RF power) to generate plasma in the plasma processing space 10s. In one embodiment, the first RF generation unit 31a is electrically connected or coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matcher. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generation unit 31a may be configured to generate a plurality of source RF signals having different frequencies. One or more generated source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0022] The second RF generation unit 31b is electrically connected to or coupled to at least one lower electrode and is configured to generate a bias RF signal (bias RF power). In one embodiment, the second RF generation unit 31b is electrically connected to or coupled to at least one lower electrode via at least one impedance matcher. When the first RF generation unit 31a is electrically connected to or coupled to a lower electrode, the second RF generation unit 31b may be electrically connected to or coupled to the same lower electrode, or it may be electrically connected to or coupled to a different lower electrode. The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generation unit 31b may be configured to generate a plurality of bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0023] The power supply system 30 may also include a power supply 32 that is electrically connected to or coupled to the plasma processing chamber 10. The power supply 32 includes a first voltage generation unit 32a and a second voltage generation unit 32b. In one embodiment, the first voltage generation unit 32a is electrically connected to or coupled to at least one lower electrode and is configured to generate a first voltage signal. The generated first voltage signal is applied to at least one lower electrode. In one embodiment, the second voltage generation unit 32b is electrically connected to or coupled to at least one upper electrode and is configured to generate a second voltage signal. The generated second voltage signal is applied to at least one upper electrode.

[0024] In various embodiments, the first and / or second voltage signals may be pulsed. In this case, the first voltage generation unit 32a and / or the second voltage generation unit 32b function as voltage pulse generation units configured to generate a sequence of voltage pulses. Thus, the sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. In one embodiment, the sequence of voltage pulses has a plurality of cycles, each cycle including a burst of voltage pulses in a first period and a constant reference voltage in a second period. That is, in the sequence of voltage pulses, the burst of voltage pulses is repeated. The absolute value of the voltage level of the voltage pulse is greater than the absolute value of the voltage level of the reference voltage. The voltage pulse may have an arbitrary waveform having a rectangle, trapezoid, triangle, or a combination thereof, and the arbitrary waveform may change over time. The voltage pulse may have positive polarity or negative polarity. The sequence of voltage pulses may also include one or more positive voltage pulses and one or more negative voltage pulses within one cycle. The first and second voltage generation units 32a and 32b may be provided in addition to the power supply 31, and the first voltage generation unit 32a may be provided in place of the second RF generation unit 31b.

[0025] The exhaust system 40 may be connected to, for example, a gas outlet 10e located at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure regulating valve regulates the pressure in the plasma processing space 10s. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0026] [Protective Structure for Bonding Layer] Next, the substrate support portion 11 will be further explained with reference to Figures 3 and 4. Figure 3 is an example of a partially enlarged cross-sectional view showing the structure of the main body portion 111 of the substrate support portion 11. Note that in Figure 3, the internal structure of the base 1110 (e.g., the flow path 1110a, temperature control module, etc.) and the internal structure of the electrostatic chuck 1111 (e.g., the electrostatic chuck electrode 1111b, etc.) are omitted from the illustration. Figure 4 is an example of a view of the protective member 1130 from above.

[0027] The main body 111 of the substrate support 11 includes a base 1110 and an electrostatic chuck 1111. The electrostatic chuck 1111 is placed on the base 1110. A bonding layer 1112 is placed between the upper surface 1110S3 of the base 1110 and the lower surface 1111S3 of the electrostatic chuck 1111. In other words, the bonding layer 1112 is formed by an adhesive that bonds the upper surface 1110S3 of the base 1110 and the lower surface 1111S3 of the electrostatic chuck 1111. The adhesive used for the bonding layer 1112 can be, for example, an acrylic resin, silicone (silicone resin), epoxy resin, etc.

[0028] Furthermore, the corner between the upper surface 1110S3 (the surface in contact with the bonding layer 1112) of the base 1110 and the side surface 1110S1 of the base 1110 has a downward tapered surface 1110S2 formed such that the radius of the base 1110 increases towards the lower side of the base 1110. Also, the corner between the lower surface 1111S3 (the surface in contact with the bonding layer 1112) of the electrostatic chuck 1111 and the side surface 1111S1 of the electrostatic chuck 1111 has an upward tapered surface 1111S2 formed such that the radius of the electrostatic chuck 1111 increases towards the upper side of the electrostatic chuck 1111.

[0029] As a result, a recess opening outwards is formed between the upper surface 1110S3 of the base 1110 and the lower surface 1111S3 of the electrostatic chuck 1111. In other words, a recess is formed on the outer peripheral side surface of the main body 111 by the tapered surfaces 1110S2, 1111S2 and the outer peripheral side surface of the bonding layer 1112. When the main body 111 is viewed radially, the outer peripheral side surface of the bonding layer 1112 is exposed at the bottom of the recess (towards the radial center).

[0030] The bonding layer 1112 is consumed by exposure to processing gases such as corrosive gases supplied to the plasma processing space 10s, and the plasma (radicals) of the processing gases generated in the plasma processing space 10s. As the adhesive of the bonding layer 1112 is consumed, the thermal conductivity between the electrostatic chuck 1111 on which the substrate W is placed and the base 1110 on which the temperature control module (flow channel 1110a, etc.) is provided may decrease. In other words, the temperature control performance of the substrate W placed on the electrostatic chuck 1111 may decrease.

[0031] The main body portion 111 of the substrate support portion 11 is provided with a protective member 1130 that protects the bonding layer 1112 from processing gas, plasma (radicals) of the processing gas, etc. As shown in Figure 3, the protective member 1130 is arranged to surround the bonding layer 1112. Also, as shown in Figure 4, the protective member 1130 is an annular member.

[0032] The protective member 1130 includes a first annular member 1131 and a second annular member 1132.

[0033] The first annular member 1131 is arranged to surround the bonding layer 1112. The first annular member 1131 has a main body portion 1131a and a protrusion 1131b that projects inward from the main body portion 1131a.

[0034] The main body portion 1131a has a rectangular shape in cross-section and is formed around the entire circumference as shown in Figure 4. The main body portion 1131a is positioned radially outward from the sides 1110S1 and 1111S1 of the main body portion 111 (base 1110, electrostatic chuck 1111). The height of the main body portion 1131a is greater than the height of the recess formed by the tapered surfaces 1110S2 and 1111S2. Furthermore, the inner circumferential surface of the main body portion 1131a is in contact with the side 1110S1 of the base 1110 below the protrusion 1131b, and in contact with the side 1111S1 of the electrostatic chuck 1111 above the protrusion 1131b. This prevents processing gas, radicals, etc. from reaching the bonding layer 1112.

[0035] The protrusion 1131b has a semicircular shape in cross-section and is formed around the entire circumference as shown in Figure 4. The protrusion 1131b is fitted into the recess formed by the tapered surfaces 1110S2 and 1111S2. This positions the first annular member 1131 in the height direction. The semicircular protrusion 1131b is in contact with the tapered surfaces 1110S2 and 1111S2. This prevents processing gas, radicals, etc. from reaching the bonding layer 1112.

[0036] Although the protrusions 1131b have been described as being formed around the entire circumference, this is not the only possible configuration. Multiple protrusions 1131b may be formed on the inner circumferential surface of the main body 1131a at predetermined intervals (e.g., equal intervals) in the circumferential direction. In this case, the protrusions 1131b may have a hemispherical shape, and their surfaces may be spherical. The height direction of the first annular member 1131 is positioned by fitting the protrusions 1131b into the recesses formed by the tapered surfaces 1110S2 and 1111S2.

[0037] The first annular member 1131 is formed from an elastic material. Furthermore, the first annular member 1131 has etching resistance to processing gases, plasma (radicals) of the processing gas, etc., compared to the adhesive (bonding layer 1112). The first annular member 1131 is an integrally molded product made of, for example, fluororubber, silicone rubber, etc. Specifically, the first annular member 1131 is formed from one of the following: FFKM (perfluoroelastomer), FKM (fluoroelastomer), VMQ (vinyl methyl silicone rubber), FVMQ (fluorosilicone rubber), etc.

[0038] The second annular member 1132 is positioned to cover the outer circumferential surface of the first annular member 1131. The second annular member 1132 has a rectangular shape in cross-section and is formed around the entire circumference as shown in Figure 4. The width of the second annular member 1132 in the height direction is greater than the width of the first annular member 1131 (main body portion 1131a) in the height direction. As a result, the outer circumferential surface of the first annular member 1131 (main body portion 1131a) is in contact with the inner circumferential surface of the second annular member 1132 and is covered by the second annular member 1132.

[0039] The second annular member 1132 is formed from a material with greater strength than the first annular member 1131. Furthermore, it is preferable that the second annular member 1132 is formed from a material with higher rigidity than the first annular member 1131. The second annular member 1132 also has etching resistance to processing gases, plasma (radicals) of the processing gas, etc., compared to the adhesive (bonding layer 1112). The second annular member 1132 is, for example, an integrally molded product made of metal, plastic, etc. Specifically, if the second annular member 1132 is made of metal, it is formed from stainless steel, aluminum, aluminum alloy, Hastelloy®, etc. If the second annular member 1132 is made of plastic, it is formed from PTFE (polytetrafluoroethylene), PFA (perfluoroalkoxyalkane), PEEK (polyetheretherketone), PI (polyimide), etc.

[0040] Here, when the protective member 1130 is positioned to cover the recess of the main body portion 111, the protrusion 1131b is positioned in the recess. Also, the inner circumferential surface of the main body portion 1131a of the first annular member 1131 is covered by contact with the side surfaces 1110S1 and 1111S1 of the main body portion 111 of the substrate support portion 11. Furthermore, the outer circumferential surface of the main body portion 1131a of the first annular member 1131 is covered by the inner circumferential surface of the second annular member 1132. As a result, the upper and lower surfaces of the main body portion 1131a are exposed to the plasma processing space 10s.

[0041] The first annular member 1131, which is an elastic member, is positioned in a state of radial compression deformation. For example, the radial thickness of the main body portion 1131a of the first annular member 1131 before elastic deformation may be longer than the radial gap distance between the inner circumferential surface of the second annular member 1132 and the outer circumferential surface (side surfaces 1110S1, 1111S1) of the main body portion 111. As a result, the first annular member 1131 is positioned in a state of radial compression deformation between the inner circumferential surface of the second annular member 1132 and the outer circumferential surface of the main body portion 111.

[0042] Further, the inner diameter of the main body portion 1131a of the first annular member 1131 before elastic deformation may be formed to be slightly smaller than the outer diameter of the outer peripheral surface (side surfaces 1110S1, 1111S1) of the main body portion 111. Further, the outer diameter of the main body portion 1131a of the first annular member 1131 before elastic deformation may be formed to be slightly larger than the inner diameter of the inner peripheral surface of the second annular member 1132. In this case, when the first annular member 1131 is attached to the main body portion 111, the first annular member 1131 is arranged in a state of being elastically deformed by being pulled in the radial direction. Then, by arranging the second annular member 1132 on the outer side in the radial direction of the first annular member 1131, the first annular member 1131 is arranged in a state of being compressed and deformed in the radial direction between the inner peripheral surface of the second annular member 1132 and the outer peripheral surface of the main body portion 111.

[0043] Further, the inner diameter of the main body portion 1131a of the first annular member 1131 before elastic deformation may be formed to be slightly larger than the outer diameter of the outer peripheral surface (side surfaces 1110S1, 1111S1) of the main body portion 111. In this case, when the first annular member 1131 is attached to the main body portion 111, the first annular member 1131 is arranged in a state of having a slight gap in the main body portion 1131a and not being elastically deformed. Then, by arranging the second annular member 1132 on the outer side in the radial direction of the first annular member 1131, the first annular member 1131 is pressed toward the main body portion 111 by the second annular member 1132 and is arranged in a state of being compressed and deformed in the radial direction between the inner peripheral surface of the second annular member 1132 and the outer peripheral surface of the main body portion 111.

[0044] The first annular member 1131 is arranged such that the convex portion 1131b of the first annular member 1131 enters the concave portion of the outer peripheral surface of the main body portion 111, and the second annular member 1132 is arranged from the outer side in the radial direction of the first annular member 1131. Thereby, the first annular member 1131 is crushed in the radial direction by the outer peripheral surface (side surfaces 1110S1, 1111S1) of the main body portion 111 and the inner peripheral surface of the second annular member 1132 and is in a state of being compressed and deformed. Further, the upper surface and the lower surface of the main body portion 1131a exposed to the plasma processing space 10s are arranged in a state of being compressed and deformed in the radial direction.

[0045] Here, as a comparative example, a case where an annular elastic member in a tension-deformed state is used as a protective member for protecting the bonding layer 1112 will be described. In this case, the restoring force of the protective member causes the protective member and the main body 111 (base 1110, electrostatic chuck 1111) to adhere and seal, thereby protecting the bonding layer 1112 from a processing gas, radicals, etc.

[0046] On the other hand, when the protective member is exposed to a processing gas, radicals, etc., damage is caused to the surface of the protective member. Due to the tensile force of the protective member, the surface damage is subjected to a force in a direction to expand, and cracks occur in the protective member. Therefore, there is a possibility that the processing gas, radicals, etc. pass through the cracks of the protective member and consume the bonding layer 1112. In addition, the replacement cycle of the protective member becomes short, and the productivity of substrate processing by the plasma processing apparatus 1 decreases.

[0047] On the other hand, in the protective member 1130 according to the present embodiment, the upper and lower surfaces of the main body portion 1131a exposed to the plasma processing space 10s are arranged in a state of being compressed and deformed in the radial direction. Therefore, even when damage is caused to the upper and lower surfaces of the main body portion 1131a due to exposure to a processing gas, radicals, etc., a force is received in a direction to crush the surface damage. Thereby, generation of cracks in the first annular member 1131 can be suppressed, and expansion of the cracks can be suppressed. Further, by suppressing the generation and expansion of cracks, it is possible to suppress the processing gas, radicals, etc. from reaching the bonding layer 1112 through the cracks, and reduce the consumption of the bonding layer 1112. Therefore, the maintenance frequency of the substrate support portion 11 can be reduced. In addition, the replacement cycle of the protective member 1130 can be lengthened, and the productivity of substrate processing by the plasma processing apparatus 1 can be improved.

[0048] Note that the shapes of the first annular member 1131 and the second annular member 1132 are not limited to the shapes shown in FIGS. 3 and 4.

[0049] FIGS. 5A to 5D are views showing an example of the shape of the first annular member 1131. FIGS. 5E to 5G are views showing an example of the shape of the second annular member 1132.

[0050] As shown in Figure 5A, the first annular member 1131-1 may have a circular cross-sectional shape. Even with this shape, when the first annular member 1131-1 is attached, the inner circumference of the first annular member 1131-1 is fitted into the recess, and it is positioned in a state of radial compression deformation by the second annular member 1132.

[0051] As shown in Figure 5B, the first annular member 1131-2 has a main body portion 1131a and a protrusion portion 1131b. As explained with reference to Figure 3, the protrusion portion 1131b of the first annular member 1131-2 is fitted into the recess, and the main body portion 1131a is positioned in a state where it is radially compressed and deformed by the second annular member 1132.

[0052] As shown in Figure 5C, the first annular member 1131-3 has a main body portion 1131a. Even with this shape, when the first annular member 1131-3 is attached, the main body portion 1131a is positioned in a state where it is radially compressed and deformed by the second annular member 1132.

[0053] As shown in Figure 5D, the first annular member 1131-4 has a main body portion 1131a and a recess 1131c. The recess 1131c fits with the protrusion 1132c of the second annular member 1132-3, which will be described later. Even with this shape, when the first annular member 1131-4 is attached, the main body portion 1131a is positioned in a state of radial compression deformation by the second annular member 1132 (1132-3). Furthermore, the height positioning of the first annular member 1131-4 and the second annular member 1132-3 can be adjusted.

[0054] As shown in Figure 5E, the second annular member 1132-1 may have a rectangular cross-sectional shape. Furthermore, as explained using Figure 3, it is preferable that the height of the second annular member 1132-1 is greater than the height of the first annular member 1131.

[0055] As shown in Figure 5F, the second annular member 1132-2 has a rectangular cross-sectional shape and has a recess 1132a on its inner circumference into which the outer circumference of the first annular member 1131 is fitted. This allows for the vertical positioning of the first annular member 1131 and the second annular member 1132-2.

[0056] As shown in Figure 5G, the second annular member 1132-3 has a rectangular cross-sectional shape and a protrusion 1132c on its inner circumference that fits into the recess 1131c of the first annular member 1131-4. This allows for the height positioning of the first annular member 1131-4 and the second annular member 1132-4.

[0057] The protective member 1130 can be used by appropriately combining the first annular member 1131 (1131-1 to 1131-4) and the second annular member 1132 (1132-1 to 1132-3).

[0058] For example, the first annular member 1131-1 may be combined with the second annular member 1132-1 to form a protective member 1130.

[0059] Furthermore, the first annular member 1131-2 may be combined with either of the second annular members 1132-1 or 1132-2 to constitute the protective member 1130.

[0060] Furthermore, the first annular member 1131-3 may be combined with either of the second annular members 1132-1 or 1132-2 to constitute the protective member 1130.

[0061] Furthermore, the first annular member 1131-4 may be combined with the second annular member 1132-3 to form a protective member 1130.

[0062] Figures 6A and 6B are examples of diagrams showing the coupling structure of the second annular member 1132. In the plane of Figures 6A and 6B, the horizontal direction corresponds to the circumferential direction of the second annular member 1132, and the vertical direction corresponds to the height direction of the second annular member 1132. That is, Figures 6A and 6B are diagrams of the coupling structure of the second annular member 1132 viewed in the radial direction.

[0063] The second annular member 1132 is a strip-shaped member that forms an annular shape by joining its two ends. In the example shown in Figure 6A, the annular member is formed by joining one end 1132d and the other end 1132e of the strip-shaped member to form a welded portion 1132f.

[0064] The second annular member 1132 is a strip-shaped member that forms an annular shape when both ends are joined together. In the example shown in Figure 6B, the annular member is formed by joining one end 1132d and the other end 1132e of the strip-shaped member to form a fitting structure 1132g.

[0065] The embodiments disclosed above include, for example, the following: (Note 1) A plasma processing apparatus comprising: a base disposed in a plasma processing chamber; an electrostatic chuck disposed on the upper part of the base; a bonding layer disposed between the base and the electrostatic chuck; and a protective member disposed to surround the bonding layer, wherein the protective member comprises: a first annular member surrounding the bonding layer; and a second annular member having greater strength than the first annular member and covering the outer circumferential surface of the first annular member. (Note 2) The plasma processing apparatus according to Note 1, wherein the first annular member is disposed with its inner circumference in contact with the base and the electrostatic chuck, and its outer circumference in contact with the second annular member, and is compressed radially. (Note 3) The plasma processing apparatus according to Note 1 or Note 2, wherein the first annular member is formed of an elastic material. (Note 4) The plasma processing apparatus according to Note 3, wherein the first annular member is formed from any of FFKM, FKM, VMQ, or FVMQ. (Note 5) The plasma processing apparatus according to any of Notes 1 to 4, wherein the second annular member is formed from metal or plastic. (Note 6) The plasma processing apparatus according to Note 5, wherein the second annular member is made of metal, and is formed from any of aluminum, aluminum alloy, or Hastelloy. (Note 7) The plasma processing apparatus according to Note 5, wherein the second annular member is made of plastic, and is formed from any of PTFE, PFA, PEEK, or PI. (Note 8) The plasma processing apparatus according to any of Notes 1 to 7, wherein a recess is formed around the bonding layer, opening outwards between the upper surface of the base and the lower surface of the electrostatic chuck, and the first annular member has a protrusion that fits into the recess. (Note 9) The plasma processing apparatus according to Note 8, wherein the protrusion has a spherical surface. (Note 10) The plasma processing apparatus according to any one of Notes 1 to 9, wherein the second annular member has a greater width in the height direction than the first annular member. (Note 11) The plasma processing apparatus according to any one of Notes 1 to 10, wherein the second annular member has a welded portion formed by welding one end to the other end of a strip-shaped member, thereby forming an annular member.(Note 12) The plasma processing apparatus according to any one of Notes 1 to 10, wherein the second annular member has a fitting portion in which one end and the other end of a strip-shaped member are fitted together to form an annular member. (Note 13) The plasma processing apparatus according to any one of Notes 1 to 12, wherein the second annular member is formed from a material of high rigidity, and the first annular member is also formed from a material of high rigidity. (Note 14) A protective member for protecting the bonding layer of a substrate support portion comprising a base disposed in a plasma processing chamber, an electrostatic chuck disposed on the upper part of the base, and a bonding layer disposed between the base and the electrostatic chuck, wherein the protective member comprises a first annular member surrounding the bonding layer and a second annular member having greater strength than the first annular member and covering the outer circumferential surface of the first annular member. (Note 15) The protective member according to Note 14, wherein the first annular member is in contact with the base and the electrostatic chuck on its inner circumference and in contact with the second annular member on its outer circumference, and is arranged to be compressed radially. (Note 16) The protective member according to Note 14 or Note 15, wherein the first annular member is formed from an elastic material. (Note 17) The protective member according to Note 16, wherein the first annular member is formed from any of FFKM, FKM, VMQ, or FVMQ. (Note 18) The protective member according to any of Notes 14 to 17, wherein the second annular member is formed from metal or plastic. (Note 19) The protective member according to Note 18, wherein the second annular member is made of metal, and is formed from any of aluminum, aluminum alloy, or Hastelloy. (Note 20) The protective member described in Note 18, wherein the second annular member is made of plastic, and is formed from PTFE, PFA, PEEK, or PI.

[0066] Furthermore, this application claims priority based on Japanese Patent Application No. 2024-198315, filed on November 13, 2024, and the entire contents of these Japanese Patent Applications are incorporated herein by reference.

[0067] 10s Plasma processing space 11 Substrate support part 111 Main body part 1110 Base 1110a Flow channel 1111 Electrostatic chuck 1110S1 Side surface 1110S2 Tapered surface 1110S3 Top surface 1111S1 Side surface 1111S2 Tapered surface 1111S3 Bottom surface 1112 Bonding layer 1130 Protective member 1131 First annular member 1132 Second annular member W Substrate 1110S2, 1111S2 Tapered surface 1131a Main body part 1131b Protrusion

Claims

1. A plasma processing apparatus comprising: a base disposed in a plasma processing chamber; an electrostatic chuck disposed on the upper part of the base; a bonding layer disposed between the base and the electrostatic chuck; and a protective member disposed to surround the bonding layer, wherein the protective member comprises: a first annular member surrounding the bonding layer; and a second annular member having greater strength than the first annular member and covering the outer circumferential surface of the first annular member.

2. The plasma processing apparatus according to claim 1, wherein the first annular member is arranged to be compressed radially, with its inner circumference in contact with the base and the electrostatic chuck, and its outer circumference in contact with the second annular member.

3. The plasma processing apparatus according to claim 1, wherein the first annular member is formed from an elastic material.

4. The plasma processing apparatus according to claim 3, wherein the first annular member is formed from any one of FFKM, FKM, VMQ, or FVMQ.

5. The plasma processing apparatus according to claim 1, wherein the second annular member is formed from metal or plastic.

6. The plasma processing apparatus according to claim 5, wherein the second annular member is a metal and is formed from aluminum, an aluminum alloy, or Hastelloy.

7. The plasma processing apparatus according to claim 5, wherein the second annular member is made of plastic, and is formed from any one of PTFE, PFA, PEEK, or PI.

8. A recess is formed around the bonding layer, opening outwards on the outer circumference between the upper surface of the base and the lower surface of the electrostatic chuck, and the first annular member has a protrusion that fits into the recess, as described in claim 1.

9. The plasma processing apparatus according to claim 8, wherein the protrusion has a spherical surface.

10. The plasma processing apparatus according to claim 1, wherein the second annular member has a greater width in the height direction than the first annular member.

11. The plasma processing apparatus according to claim 1, wherein the second annular member has a welded portion formed by welding one end to the other end of a strip-shaped member, thereby forming an annular member.

12. The plasma processing apparatus according to claim 1, wherein the second annular member has a fitting portion formed by fitting one end and the other end of a strip-shaped member together, thereby forming an annular member.

13. The plasma processing apparatus according to claim 1, wherein the second annular member is formed from a material that is highly rigid, and the first annular member is also formed from a highly rigid material.

14. A protective member for protecting the bonding layer of a substrate support portion comprising a base disposed in a plasma processing chamber, an electrostatic chuck disposed on the upper part of the base, and a bonding layer disposed between the base and the electrostatic chuck, wherein the protective member comprises a first annular member surrounding the bonding layer and a second annular member having greater strength than the first annular member and covering the outer circumferential surface of the first annular member.

15. The protective member according to claim 14, wherein the first annular member is arranged to be compressed radially, with its inner circumference in contact with the base and the electrostatic chuck, and its outer circumference in contact with the second annular member.

16. The protective member according to claim 14, wherein the first annular member is formed from an elastic material.

17. The protective member according to claim 16, wherein the first annular member is formed from any one of FFKM, FKM, VMQ, or FVMQ.

18. The protective member according to claim 14, wherein the second annular member is formed of metal or plastic.

19. The protective member according to claim 18, wherein the second annular member is made of a metal, and is formed from aluminum, an aluminum alloy, or Hastelloy.

20. The protective member according to claim 18, wherein the second annular member is made of plastic, and is formed from any one of PTFE, PFA, PEEK, or PI.

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