Display device

Abstract

Provided is a display device comprising a plurality of light-emitting elements arranged in a matrix on a semiconductor substrate and including a first light-emitting element and a second light-emitting element that emit light of mutually different colors. Each of the light-emitting elements includes a lower electrode that reflects light, a light-emitting layer provided on the lower electrode, and an upper electrode provided on the light-emitting layer. The lower electrode of the first light-emitting element is formed from a first lower electrode layer, and the lower electrode of the second light-emitting element is formed from the first lower electrode layer and a second lower electrode layer laminated on the first lower electrode layer.

Description

Display device

[0001] The present disclosure relates to a display device.

[0002] In recent years, the development of display devices using electroluminescent (EL) elements as light-emitting elements has been progressing. The display device includes, for example, a plurality of light-emitting elements composed of a lower electrode, a light-emitting layer laminated on the lower electrode, and an upper electrode laminated on the light-emitting layer. Then, when a predetermined voltage is applied between the lower electrode and the upper electrode, the light-emitting layer sandwiched between the lower electrode and the upper electrode emits light. For example, as an example of such a display device, the display device of Patent Document 1 below can be cited.

[0003] Japanese Patent Application Laid-Open No. 2005-93401

[0004] In the manufacture of a display device, in the mask evaporation process, red, green, and blue are painted separately (RGB painting), that is, by sequentially evaporating a light-emitting layer 210 that emits red, green, and blue light, light-emitting elements that emit red, green, and blue light are sequentially manufactured. However, in the manufacturing process of the prior art, the evaporation of the light-emitting layer of the light-emitting element to be manufactured next is blocked by the presence of the previously manufactured light-emitting element, and it is difficult to uniformly laminate the light-emitting layer on the substrate.

[0005] Therefore, the present disclosure proposes a technique capable of uniformly laminating the light-emitting layers of the light-emitting elements formed second and later.

[0006] According to the present disclosure, a display device is provided that includes a plurality of light-emitting elements arranged in a matrix on a semiconductor substrate and including a first light-emitting element and a second light-emitting element that emit light of different colors from each other. Each of the light-emitting elements has a lower electrode that reflects light, a light-emitting layer provided on the lower electrode, and an upper electrode provided on the light-emitting layer. The lower electrode of the first light-emitting element is composed of a first lower electrode layer, and the lower electrode of the second light-emitting element is composed of the first lower electrode layer and a second lower electrode layer laminated on the first lower electrode layer.

[0007] This is a schematic diagram showing an example of the overall configuration of a display device according to an embodiment of this disclosure. This is a schematic circuit diagram for explaining the wiring relationship in the sub-pixel of the mth row and nth column. This is a cross-sectional view for explaining an example of the pixel configuration according to a comparative example. This is a cross-sectional view (1) for explaining an example of the pixel manufacturing method according to a comparative example. This is a cross-sectional view (2) for explaining an example of the pixel manufacturing method according to a comparative example. This is a cross-sectional view for explaining the problems in the comparative example. This is a cross-sectional view (1) for explaining the outline of the pixel manufacturing method according to the first embodiment of this disclosure. This is a cross-sectional view (2) for explaining the outline of the pixel manufacturing method according to the first embodiment of this disclosure. This is a cross-sectional view for explaining an example of the pixel configuration according to the first embodiment of this disclosure. This is a cross-sectional view for explaining an example of the pixel configuration according to the second embodiment of this disclosure. This is a cross-sectional view for explaining an example of the pixel configuration according to a modified example of the second embodiment of this disclosure. This is a cross-sectional view for explaining an example of the pixel configuration according to a third embodiment of this disclosure. This is a cross-sectional view for explaining an example of the pixel configuration according to modified example 1 of the third embodiment of this disclosure. This is a cross-sectional view for explaining an example of the pixel configuration according to modified example 2 of the third embodiment of this disclosure. This is a plan view (1) for explaining an example of the pixel configuration according to a fourth embodiment of this disclosure. This is a plan view (2) for explaining an example of the pixel configuration according to a fourth embodiment of this disclosure. This is a plan view (part 3) illustrating an example of the pixel configuration according to the fourth embodiment of this disclosure. This is a cross-sectional view (part 1) illustrating a method for manufacturing a pixel according to the fifth embodiment of this disclosure. This is a cross-sectional view (part 2) illustrating a method for manufacturing a pixel according to the fifth embodiment of this disclosure. This is a cross-sectional view (part 3) illustrating a method for manufacturing a pixel according to the fifth embodiment of this disclosure. This is a cross-sectional view (part 4) illustrating a method for manufacturing a pixel according to the fifth embodiment of this disclosure. This is a cross-sectional view illustrating an example of the pixel configuration according to the sixth embodiment of this disclosure. This is a cross-sectional view illustrating an example of the pixel configuration according to modification 1 of the sixth embodiment of this disclosure. This is a cross-sectional view illustrating an example of the pixel configuration according to modification 2 of the sixth embodiment of this disclosure. This is a cross-sectional view illustrating an example of the pixel configuration according to modification 3 of the sixth embodiment of this disclosure.This is a cross-sectional view illustrating an example of the pixel configuration according to Modification 4 of the sixth embodiment of this disclosure. This is a cross-sectional view illustrating an example of the pixel configuration according to Modification 5 of the sixth embodiment of this disclosure. This is a cross-sectional view (1) illustrating the method for manufacturing a pixel according to the seventh embodiment of this disclosure. This is a cross-sectional view (2) illustrating the method for manufacturing a pixel according to the seventh embodiment of this disclosure. This is a cross-sectional view (3) illustrating the method for manufacturing a pixel according to the seventh embodiment of this disclosure. This is a cross-sectional view (4) illustrating the method for manufacturing a pixel according to the seventh embodiment of this disclosure. This is a cross-sectional view (5) illustrating the method for manufacturing a pixel according to the seventh embodiment of this disclosure. This is a cross-sectional view (6) illustrating the method for manufacturing a pixel according to the seventh embodiment of this disclosure. This is a cross-sectional view (7) illustrating the method for manufacturing a pixel according to the seventh embodiment of this disclosure. This is a cross-sectional view (8) illustrating the method for manufacturing a pixel according to the seventh embodiment of this disclosure. This is a conceptual diagram (1) to explain the relationship between the normal vector LN passing through the center of the light-emitting part, the normal vector LN' passing through the center of the lens member, and the normal vector LN" passing through the center of the wavelength-selecting part. This is a conceptual diagram (2) to explain the relationship between the normal vector LN passing through the center of the light-emitting part, the normal vector LN' passing through the center of the lens member, and the normal vector LN" passing through the center of the wavelength-selecting part. This is a conceptual diagram (3) to explain the relationship between the normal vector LN passing through the center of the light-emitting part, the normal vector LN' passing through the center of the lens member, and the normal vector LN" passing through the center of the wavelength-selecting part. This is a conceptual diagram (4) to explain the relationship between the normal vector LN passing through the center of the light-emitting part, the normal vector LN' passing through the center of the lens member, and the normal vector LN" passing through the center of the wavelength-selecting part. This is a conceptual diagram (No. 5) illustrating the relationship between the normal vector LN passing through the center of the light-emitting part, the normal vector LN' passing through the center of the lens member, and the normal vector LN'' passing through the center of the wavelength-selecting part. This is a conceptual diagram (No. 6) illustrating the relationship between the normal vector LN passing through the center of the light-emitting part, the normal vector LN' passing through the center of the lens member, and the normal vector LN'' passing through the center of the wavelength-selecting part. This is a conceptual diagram (No. 7) illustrating the relationship between the normal vector LN passing through the center of the light-emitting part, the normal vector LN' passing through the center of the lens member, and the normal vector LN'' passing through the center of the wavelength-selecting part. This is a schematic cross-sectional view illustrating the first example of the resonator structure. This is a schematic cross-sectional view illustrating the second example of the resonator structure.This is a schematic cross-sectional view illustrating a third example of a resonator structure. This is a schematic cross-sectional view illustrating a fourth example of a resonator structure. This is a schematic cross-sectional view illustrating a fifth example of a resonator structure. This is a schematic cross-sectional view illustrating a sixth example of a resonator structure. This is a schematic cross-sectional view illustrating a seventh example of a resonator structure. This is a front view showing an example of the appearance of a digital still camera. This is a rear view showing an example of the appearance of a digital still camera. This is an external view of a head-mounted display. This is an external view of a see-through head-mounted display. This is an external view of a television system. This is an external view of a smartphone. This is a diagram (1) showing the internal configuration of an automobile. This is a diagram (2) showing the internal configuration of an automobile.

[0008] Preferred embodiments of this disclosure will be described in detail below with reference to the accompanying drawings. In this specification and drawings, components having substantially the same functional configuration will be denoted by the same reference numeral to avoid redundant explanation. In addition, in this specification and drawings, multiple components having substantially the same or similar functional configurations may be distinguished by adding a different alphabet after the same reference numeral. However, if there is no particular need to distinguish each of multiple components having substantially the same or similar functional configurations, only the same reference numeral will be used.

[0009] Furthermore, the drawings referenced in the following description are intended to illustrate and facilitate understanding of one embodiment of this disclosure, and for the sake of clarity, the shapes, dimensions, ratios, etc. shown in the drawings may differ from those of the actual product. In addition, the apparatus shown in the drawings may be modified in design as appropriate, taking into consideration the following description and known technology.

[0010] The descriptions of specific shapes in the following explanation do not refer only to geometrically defined shapes. More specifically, the descriptions of shapes in the following explanation include light-emitting elements, display devices (light-emitting devices), their manufacturing processes, and shapes that are similar to or have acceptable differences (errors or distortions) in their use and operation.

[0011] Furthermore, in the following descriptions of circuits (electrical connections), unless otherwise specified, "electrically connected" means connecting multiple elements in such a way that electricity (signals) can conduct through them. In addition, "electrically connected" in the following descriptions includes not only cases where multiple elements are directly and electrically connected, but also cases where they are indirectly and electrically connected through other elements.

[0012] The explanation will proceed in the following order: 1. Overall configuration of the display device according to the embodiment of this disclosure 2. Background 3. First embodiment 3.1 Overview 3.2 Detailed configuration 4. Second embodiment 4.1 Detailed configuration 4.2 Modification 5. Third embodiment 5.1 Detailed configuration 5.2 Modification 6. Fourth embodiment 7. Fifth embodiment 8. Sixth embodiment 8.1 Detailed configuration 8.2 Modification 9. Seventh embodiment 10. Summary 11. Modification 11.1 Modification 1 11.2 Modification 2 12. Application examples 13. Supplement

[0013] <<1. Overall Configuration of the Display Device According to the Embodiment of the Disclosure>> Referring to Figure 1, an example of the overall configuration of an organic EL (Electro-Luminescence) display device (display device) 10 (hereinafter simply referred to as "display device 10") according to the embodiment of the disclosure, which is used as a display device or lighting device, will be described. Figure 1 is a schematic diagram showing an example of the overall configuration of the display device 10 according to the embodiment of the disclosure.

[0014] The display device 10 is a device in which light-emitting elements such as OLEDs (Organic Light Emitting Diodes) or Micro-OLEDs are formed in an array. Such a display device 10 can be applied as a display device for VR (Virtual Reality), MR (Mixed Reality), or AR (Augmented Reality), an electronic viewfinder (EVF), or a small projector, etc. The display device 10 can also be applied to various lighting devices. Note that the display device 10 may use light-emitting elements made of inorganic materials instead of light-emitting elements made of organic materials such as OLEDs.

[0015] The display device 10 has a display area and a peripheral area provided around the periphery of the display area. As shown in Figure 1, within the display area of ​​the display device 10, for example, a plurality of subpixels 100R, 100G, and 100B are arranged in a matrix. Subpixel 100R can emit red light, subpixel 100G can emit green light, and subpixel 100B can emit blue light. In the following description, unless otherwise distinguished, subpixels 100R, 100G, and 100B will be referred to as subpixel 100.

[0016] Furthermore, in this embodiment, one pixel 20 is composed of, for example, three types of subpixels 100R, 100G, and 100B that emit different light. In this embodiment, the number and arrangement of each of the three types of subpixels 100R, 100G, and 100B included in one pixel 20 are not particularly limited. Also, in this embodiment, one pixel 20 is not limited to being composed of multiple subpixels 100 that emit different light as described above, but may be composed of multiple subpixels 100 that emit the same color light. Furthermore, a pixel 20 means the smallest unit (pixel) controlled when controlling the light emission of the display device 10, and is composed of multiple subpixels 100 that are treated as one unit during control. In other words, in this embodiment, the display device 10 has multiple pixels 20 arranged in a matrix on the substrate 40.

[0017] Furthermore, as shown in Figure 1, a horizontal drive circuit 11 and a vertical drive circuit 12 are provided in the peripheral area of ​​the display device 10.

[0018] The horizontal drive circuit 11 scans each subpixel 100 row by row (in Figure 1, the direction extending along the X direction is called the row direction) when writing a signal to each subpixel 100, and each scan line SCL ｍ Scanning signals can be supplied sequentially. The horizontal drive circuit 11 can be configured, for example, by a shift register that sequentially shifts (transfers) start pulses in synchronization with the input clock pulse.

[0019] Furthermore, the vertical drive circuit 12 outputs the signal voltage of the signal corresponding to the brightness information supplied from the signal source (not shown) to the signal line DTL. ｎ It can be supplied to subpixels 100 selected in column units (in Figure 1, the direction extending along the Y direction is called the column direction) via this.

[0020] In the embodiments of this disclosure, the configuration of the display device 10 is not limited to the configuration shown in Figure 1. That is, the configuration shown in Figure 1 is merely an example, and the display device 10 according to the embodiments of this disclosure can take various configurations.

[0021] Next, referring to FIG. 2, the circuit configuration of the sub-pixel 100 at the m-th row and n-th column will be described. FIG. 2 is a schematic circuit diagram for explaining the connection relationship of the sub-pixel 100 at the m-th row and n-th column.

[0022] In the display device 10, as described above, the sub-pixel 100 including the light-emitting element ELP is connected to the scanning line SCL ｍ extending in the row direction (X direction in FIG. 1) ｎ and the signal line DTL

[0023] extending in the column direction (Y direction in FIG. 1) and arranged in a two-dimensional matrix. ｍ Further, as shown in FIG. 2, the display device 10 has a power supply line PS1 for supplying a driving voltage to the sub-pixel 100 ｍ and a common power supply line PS2 commonly connected to all the sub-pixels 100. The power supply line PS1 ｃｃ is supplied with a predetermined driving voltage V ｃａｔ etc. from a power supply unit (not shown), and the common power supply line PS2 is supplied with a common voltage V

[0024] (for example, the ground potential). ｍ Here, let the number of the scanning lines SCL and the power supply lines PS1 be M each. The sub-pixel 100 in the m-th row (where m = 1, 2,..., P) is connected to the m-th scanning line SCL ｍ and the m-th power supply line PS1, and constitutes one display element row. In FIG. 2, only the scanning line SCL ｍ and the power supply line PS1 ｍ are shown. Also, let the number of the signal lines DTL be N. The sub-pixel 100 in the n-th column (where n = 1, 2,..., N) is connected to the n-th signal line DTL ｎ In FIG. 2, only the signal line DTL ｎ is shown. Hereinafter, the sub-pixel 100 located at the m-th row and n-th column may be referred to as the (n, m)-th sub-pixel 100.

[0025] As explained earlier, the display device 10 is scanned sequentially row by row by the scanning signal from the horizontal drive circuit 11. More specifically, in the display device 10, M subpixels 100 arranged in the mth row are driven simultaneously. In other words, for the M subpixels 100 arranged along the row direction, the timing of their illumination / de-illumination is controlled on a row-by-row basis. For example, if the display frame rate of the display device 10 is FR (frames / second), the scanning period per row (the so-called horizontal scanning period) when the display device 10 is scanned sequentially row by row will be less than (1 / FR) × (1 / P) seconds.

[0026] Furthermore, as shown in Figure 2, the sub-pixel 100 is composed of a light-emitting element ELP and a drive circuit that drives it. The light-emitting element ELP consists of an organic electroluminescent light-emitting element or an inorganic electroluminescent light-emitting element. The drive circuit is a writing transistor TR Ｗ , and drive transistor TR Ｄ , and also, capacity section C １ It consists of the following: drive transistor TR Ｄ When current flows through the light-emitting element ELP, the ELP can emit light. Each transistor is composed of, for example, a p-channel field-effect transistor.

[0027] As shown in Figure 2, in the subpixel 100, the drive transistor TR Ｄ One of the source / drain regions is the capacitance section C １ One end and power supply line PS1 ｍ The source / drain region of the other side is electrically connected to one end of the light-emitting element ELP (specifically, the anode electrode). Ｄ The gate electrode is the writing transistor TR Ｗ It is connected to the other source / drain region, and the capacitance section C １ It is electrically connected to the other end.

[0028] Also, as shown in Figure 2, the writing transistor TR ｗ One of the source / drain regions is the signal line DTL ｎIt is electrically connected to the writing transistor TR Ｗ The gate electrode is the scan line SCL ｍ It is electrically connected to it.

[0029] Furthermore, as shown in Figure 2, the other end of the light-emitting element ELP (specifically, the cathode electrode) is electrically connected to the common power supply line PS2. In addition, a predetermined cathode voltage V is supplied to the common power supply line PS2. ｃａｔ This is supplied. Note that in Figure 2, the capacitance of the light-emitting element ELP is denoted by code C. ＥＬ It is represented as follows.

[0030] The overview of the driving of the subpixel 100 will be explained. In the subpixel 100, the signal line DTL is transmitted from the vertical drive circuit 12. ｎ With a voltage corresponding to the brightness of the image to be displayed supplied, the writing transistor TR is activated by a scanning signal from the horizontal drive circuit 11. Ｗ When it is in a conductive state, capacitance part C １ A voltage corresponding to the brightness is written to it. (Writing transistor TR) Ｗ After the capacitor is de-conducted, the capacitance part C １ The drive transistor TR operates according to the voltage held in Ｄ When an electric current flows through it, the light-emitting element ELP emits light.

[0031] In the embodiments of this disclosure, the configuration of the drive circuit that controls the light emission of the light-emitting element ELP is not limited to the configuration shown in Figure 2. Therefore, the configuration shown in Figure 2 is merely an example, and various configurations can be taken in the display device 10 according to the embodiments of this disclosure.

[0032] <<2. Background>> Next, before describing the details of the embodiments of this disclosure with reference to Figures 3 to 5, the background leading to the inventor's creation of the embodiments of this disclosure will be explained. Figure 3 is a cross-sectional view illustrating an example of the configuration of a pixel 20a according to a comparative example, and Figures 4A and 4B are cross-sectional views illustrating an example of a manufacturing method for a pixel 20a according to a comparative example. Furthermore, Figure 5 is a cross-sectional view illustrating the problems in the comparative example. Here, "comparative example" refers to the configuration and manufacturing method of a pixel 20a that the inventor had been studying before creating the embodiments of this disclosure.

[0033] In recent years, light-emitting elements such as OLEDs (Organic Light-Emitting Diodes) have come to be used not only in direct-view display devices such as monitors, but also in ultra-small display devices (microdisplays) that require a pixel pitch of several microns. In direct-view display devices using OLEDs, the light-emitting elements of subpixels 100 are formed by sequentially fabricating light-emitting layers that emit blue, green, and red light, that is, by painting them separately with blue, green, and red (RGB painting) using the mask deposition process described above.

[0034] For example, the display device 10 according to the comparative example has a plurality of pixels 20a. As shown in Figure 3, for example, each pixel 20a is composed of a combination of three types of subpixels 102R, 102G, and 102B. Here, subpixel 102R has a light-emitting element 112r that emits red light, subpixel 102G has a light-emitting element 112g that emits green light, and subpixel 102B has a light-emitting element 112b that emits blue light. In the comparative example, the number and arrangement of each of the three types of subpixels 102R, 102G, and 102B included in one pixel 20a are not limited. Also, in the comparative example, as shown in Figure 3, each of the light-emitting elements 112b, 112g, and 112r is separated from each other.

[0035] Each light-emitting element 112 includes an anode electrode 200a provided on a substrate 40, a light-emitting layer 210 (specifically, light-emitting layers 210b, 210g, and 210r) laminated on the anode electrode 200a, a cathode electrode 220 laminated on the light-emitting layer 210 and transmitting light from the light-emitting layer 210, and a protective film 230 laminated on the cathode electrode 220 and transmitting light from the light-emitting layer 210. Furthermore, the sides of the light-emitting element 112 are covered by the protective film 232.

[0036] In the light-emitting element 112 according to this comparative example, when a predetermined voltage is supplied to the anode electrode 200a and the cathode electrode 220, the light-emitting layer 210 sandwiched between the anode electrode 200a and the cathode electrode 220 emits light. In the comparative example, light is emitted from the light-emitting layer 210 along the direction from the anode electrode 200a toward the cathode electrode 220. In other words, the display device 10 is a top-emission type light-emitting device.

[0037] In such a light-emitting element 112, it is required that the light-emitting layer 210 be uniformly laminated. If the light-emitting layer 210 is not uniformly formed on the anode electrode 200a, the light-emitting area of ​​the light-emitting element 112 (light-emitting area / aperture area) will be reduced, which may lead to a decrease in local brightness of the display device 10. Furthermore, if the light-emitting layer 210 is not uniformly formed on the anode electrode 200a, the reliability of the light-emitting element 112 may decrease due to the presence of areas where the light-emitting layer 210 is thin, which may shorten the product life of the display device 10.

[0038] Furthermore, in the comparative example, it is preferable to optimize the structure of the light-emitting element 112 so that the light extraction efficiency is improved for each color of emitted light. In the comparative example, as a method for such optimization, for example, microcavity technology is used to improve color reproducibility and light extraction efficiency.

[0039] In microcavity technology, for each light-emitting element 112, the distance between the anode electrode (first reflective surface) 200a, which functions as a reflective film, and the cathode electrode (second reflective surface) 220 is optimized to resonate the light from the light-emitting layer 210 between the anode electrode 200a and the cathode electrode 220. Specifically, in microcavity technology, for example, the optical distance L between the anode electrode 200a and the cathode electrode 220 satisfies the resonance condition shown by the following equation (1) with respect to the emission peak wavelength λ of the light-emitting layer 210.

[0040] λ: Emission peak wavelength λ of each subpixel 102 Φ: Phase shift (radians) between the first and second reflecting surfaces m: integer

[0041] Note that the resonance order m may differ for each sub-pixel 102.

[0042] In such a microcavity structure, the optical distance L between the anode electrode 200a and the cathode electrode 220 corresponds to the thickness of the light-emitting layer 210. Therefore, in the comparative example, it is preferable to accurately and uniformly laminate the light-emitting layer 210 so that the thickness reaches the desired thickness.

[0043] Furthermore, the pixel 20a in this comparative example is produced by a method using RGB color separation as shown in Figures 4A and 4B.

[0044] First, an anode electrode 200a is formed on the substrate 40. Next, a light-emitting layer 210b that emits blue light is laminated over the entire surface of the substrate 40, including the anode electrode 200a, for example, using a vapor deposition method. Then, a cathode electrode 220 is formed by depositing a transparent conductive material over the entire surface of the substrate 40, for example, by a sputtering method. Furthermore, a protective film 230 is deposited over the entire surface of the substrate 40, for example, by a CVD (Chemical Vapor Deposition) method. In this way, the configuration shown in the upper part of Figure 4A can be obtained.

[0045] Next, a resist (not shown) is formed to cover the area on the protective film 230 that will become the light-emitting element 112b. Subsequently, the protective film 230, cathode electrode 220, and light-emitting layer 210b are processed together along the pattern of the resist, for example by a dry etching method, and then the resist is removed to obtain the form shown in the lower part of Figure 4A. In other words, the stacked structure of the light-emitting element 112b is fabricated up to the stage shown in the lower part of Figure 4A.

[0046] In the comparative example, the anode electrode 200a may be deposited on the entire surface of the substrate 40, and then the anode electrode 200a may be processed simultaneously with the protective film 230, cathode electrode 220, and light-emitting layer 210b to create the laminated structure of the light-emitting element 112b.

[0047] Next, a protective film 232 is formed to cover the sidewalls of the stacked structure of the light-emitting element 112b using methods such as CVD and etching. In this way, the configuration shown in the upper part of Figure 4B can be obtained.

[0048] Furthermore, in the comparative example, in order to fabricate the stacked structure of the light-emitting element 112g, for example, a light-emitting layer 210g that emits green light is stacked on the entire surface of the substrate 40 using a vapor deposition method. In this way, the form shown in the lower part of Figure 4B can be obtained.

[0049] Furthermore, the same procedure as for fabricating the stacked structure of the light-emitting element 112b is repeated to sequentially fabricate the light-emitting element 112g and the light-emitting element 112r.

[0050] In the process shown in the lower part of Figure 4B, it is difficult to laminate the light-emitting layer 210g with a uniform film thickness. As can be seen from Figure 5, which illustrates in more detail, when depositing the light-emitting layer 210g, the material for the light-emitting layer 210g is blocked by the already fabricated light-emitting element 112b, resulting in locally thin areas (vignetting) 300 in the light-emitting layer 210b. Specifically, the material for the light-emitting layer 210g deposited from the upper front of the top surface of the substrate 40 (arrow shown in the center of the figure) is uniformly laminated on the substrate 40. On the other hand, the material for the light-emitting layer 210g deposited from an oblique angle to the top surface of the substrate 40 (arrow shown on the left in the figure) is blocked by the tall light-emitting element 112b, making it difficult to laminate it uniformly on the substrate 40. The anode electrode 200a of other light-emitting elements 112g adjacent to the light-emitting element 112b is at a much lower position than the height of the top surface of the light-emitting element 110b, making it difficult to deposit the material for the light-emitting layer 210g. Therefore, in the comparative example, it is difficult to laminate the light-emitting layer 210g of the second and subsequent light-emitting elements 112g so that their film thickness is uniform.

[0051] Furthermore, if the light-emitting layer 210g is not uniformly deposited on the anode electrode 200a, the reliability of the light-emitting element 112g may decrease due to the presence of areas where the light-emitting layer 210g is thin, potentially shortening the product life of the display device 10. In such cases, the light-emitting area (light-emitting area / aperture area) of the light-emitting element 112g becomes smaller, which can lead to a decrease in local brightness of the display device 10.

[0052] Therefore, in view of this situation, the inventors have come up with an embodiment of the present disclosure that allows for the uniform stacking of the light-emitting layers of the second and subsequent light-emitting elements. The details of the embodiment of the present disclosure created by the inventors will be described below.

[0053] <<3. First Embodiment>> <3.1 Overview> First, an overview of the first embodiment of the present disclosure will be described with reference to Figures 6A and 6B. Figures 6A and 6B are cross-sectional views illustrating an overview of the manufacturing method of the pixel 20 according to the first embodiment of the present disclosure.

[0054] In the example described below, the display device 10 has a plurality of pixels 20. Each pixel 20 is composed of a combination of three types of subpixels 100R, 100G, and 100B. Here, subpixel 100R has a light-emitting element 110r that emits red light, subpixel 100G has a light-emitting element 110g that emits green light, and subpixel 100B has a light-emitting element 110b that emits blue light. In this embodiment, the number and arrangement of each of the three types of subpixels 100R, 100G, and 100B included in a single pixel 20 are not limited.

[0055] In this embodiment as well, a mask deposition process is used to sequentially fabricate light-emitting elements 110 that emit red, green, and blue light and are separated from each other, by applying red, green, and blue paint (RGB painting).

[0056] First, in this embodiment, as in the comparative example, an electrode layer (first lower electrode layer) 200 is formed on the substrate 40. Specifically, for example, a metal film can be deposited by sputtering or the like, and then patterned using lithography and dry etching to form multiple electrode layers 200. In this embodiment, the electrode layer 200 constitutes the entire anode electrode of the light-emitting element 110b, and a part of the anode electrodes of the light-emitting elements 110g and 110r. Next, a transparent conductive film 208 is formed to cover the electrode layer 200.

[0057] Next, a light-emitting layer 210b that emits blue light is laminated over the entire surface of the substrate 40, which includes the electrode layer 200. For example, the light-emitting layer 210b can be formed by a vapor deposition method. Then, as the cathode electrode 220b of the light-emitting element 110b, for example, a transparent conductive material is deposited over the entire surface of the substrate 40 by sputtering. Furthermore, as a protective film 230, for example, a SiN film is deposited over the entire surface of the substrate 40 by CVD or the like on the cathode electrode 220b.

[0058] Furthermore, a resist (not shown) is formed to cover the area on the protective film 230 that will become the light-emitting element 110b. Subsequently, for example, by a dry etching method, the protective film 230, cathode electrode 220b, and light-emitting layer 210b are processed together along the pattern of the resist, and then the resist is removed. Through these steps, the laminated structure of the light-emitting element 110b is fabricated.

[0059] Next, a protective film 232 is formed to cover the sidewalls of the stacked structure of the light-emitting element 110b using methods such as CVD and etching. In this way, the form shown in the upper part of Figure 6A can be obtained. In this embodiment, the steps up to this point, that is, the steps up to the production of the first light-emitting element 110b, are basically the same as in the comparative example. However, in this embodiment, the steps from this point onward differ from those in the comparative example.

[0060] Next, as shown in the lower part of Figure 6A, an electrode layer (second lower electrode layer) 202, which will become part of the anode electrode of the light-emitting element 110g, is laminated over the entire surface of the substrate 40 including the electrode layer 200. In this way, the height of the upper surface of the anode electrode of the light-emitting element 110g is increased in this embodiment. Furthermore, in this embodiment, as shown in the upper part of Figure 6B, a light-emitting layer 210g that emits green light, a cathode electrode 220g, and a protective film 230 are sequentially laminated over the entire surface of the substrate 40.

[0061] Thus, in this embodiment, the anode electrode of another light-emitting element 110g adjacent to the light-emitting element 110b is a laminate of electrode layer 200 and electrode layer 202. Therefore, in this embodiment, unlike the comparative example, the upper surface of the anode electrode of the light-emitting element 110g is not significantly lower than the height of the upper surface of the light-emitting element 110b. Consequently, in this embodiment, compared to the comparative example, it is easier to deposit the material of the light-emitting layer 210g onto the anode electrode of the light-emitting element 110g. As a result, in this embodiment, the occurrence of areas where the light-emitting layer 210g is locally thinned (vignetting) 300 is suppressed, and the light-emitting layers 210g of the second and subsequent light-emitting elements 110g can be laminated so that their film thickness is uniform.

[0062] Therefore, according to this embodiment, it is possible to suppress the decrease in reliability of the light-emitting element 110g caused by the local thinning of the light-emitting layer 210g, and to avoid shortening the product life of the display device 10. Furthermore, according to this embodiment, it is possible to avoid a decrease in the light-emitting area of ​​the light-emitting element 110g, and to avoid a decrease in local brightness of the display device 10.

[0063] Furthermore, in this embodiment, as shown in the lower part of Figure 6B, the same procedure as for manufacturing the light-emitting element 110b is repeated to sequentially manufacture the light-emitting element 110g and the light-emitting element 110r.

[0064] Further details regarding the manufacturing method of the pixel 20 according to this embodiment will be described later.

[0065] As described above, in this embodiment, the anode electrode of another light-emitting element 110g adjacent to the light-emitting element 110b is a stack of electrode layer 200 and electrode layer 202, so the upper surface of the anode electrode of the light-emitting element 110g is not significantly lower than the height of the upper surface of the light-emitting element 110b. Therefore, in this embodiment, the material for the light-emitting layer 210g is easily deposited on the anode electrode of the light-emitting element 110g. As a result, according to this embodiment, the occurrence of areas where the light-emitting layer 210g is locally thin (vignetting) 300 is suppressed, and the light-emitting layers 210g of the second and subsequent light-emitting elements 110g can be stacked so that their film thickness is uniform. Furthermore, according to this embodiment, similar to the light-emitting layer 210g of the light-emitting element 110g, the light-emitting layer 210r of the light-emitting element 110r can be stacked so that its film thickness is uniform.

[0066] <3.2 Detailed Configuration> Next, the detailed configuration of the pixel 20 according to the first embodiment of the present disclosure will be described with reference to Figure 7. Figure 7 is a cross-sectional view illustrating an example of the configuration of the pixel 20 according to the present embodiment, and more specifically corresponds to a cross-section obtained when the substrate 40 is cut along its film thickness direction.

[0067] In this embodiment, as previously described, the display device 10 has a plurality of pixels 20, and each pixel 20 is composed of a combination of three types of sub-pixels 100R, 100G, and 100B, as shown in Figure 7, for example. Here, sub-pixel 100R has a light-emitting element (third light-emitting element) 110r that emits red light, sub-pixel 100G has a light-emitting element (second light-emitting element) 110g that emits green light, and sub-pixel 100B has a light-emitting element (first light-emitting element) 110b that emits blue light. Furthermore, in this embodiment, as shown in Figure 7, each of the light-emitting elements 110b, 110g, and 110r is separated from each other.

[0068] Each light-emitting element 110 has a light-reflecting anode electrode (lower electrode) provided on a substrate 40, a light-emitting layer 210 (specifically, light-emitting layers 210b, 210g, and 210r) laminated on the anode electrode, a cathode electrode (upper electrode) 220 (specifically, cathode electrodes 220b, 220g, and 220r) laminated on the light-emitting layer 210, and a protective film 230 laminated on the cathode electrode 220 that transmits light from the light-emitting layer 210. Furthermore, in this embodiment, as shown in Figure 7, in each light-emitting element 110g and 110r, these layers are processed so that the side surface of the anode electrode, the side surface of the light-emitting layer 210, the side surface of the cathode electrode 220, and the side surface of the protective film 230 are flush. In addition, the side surface of each light-emitting element 110 is covered with a protective film 232. The details of each component of these light-emitting elements 110 will be described in order below.

[0069] The substrate 40 can be formed from a transparent material such as glass or a semiconductor material such as silicon. For example, a drive circuit for driving the light-emitting element 110 can be constructed by appropriately forming transistors, wiring, etc., within the substrate 40. An anode electrode, etc., which will be described later, is provided on the substrate 40. For example, a voltage can be applied to the anode electrode via a via (not shown) etc. provided on the substrate 40.

[0070] In detail, the substrate 40 can be formed from a glass substrate such as high-strain point glass, soda glass, borosilicate glass, forsterite, lead glass, or quartz glass; a semiconductor substrate such as amorphous silicon or polycrystalline silicon; or a resin substrate such as polymethyl methacrylate, polyvinyl alcohol, polyvinylphenol, polyethersulfone, polyimide, polycarbonate, polyethylene terephthalate, or polyethylene naphthalate.

[0071] In this embodiment, the anode electrode of each light-emitting element 110 is provided on the substrate 40 individually for each light-emitting element 110, that is, separated. When a voltage is applied between the anode electrode and the cathode electrode 220, which will be described later, holes are injected from the anode electrode into the light-emitting layer 210, which will be described later.

[0072] In this embodiment, as shown in Figure 7, the anode electrode (lower electrode) of the light-emitting element (first light-emitting element) 110b consists of an electrode layer (first lower electrode layer) 200. The anode electrode (lower electrode) of the light-emitting element (second light-emitting element) 110g consists of an electrode layer (first lower electrode layer) 200 and an electrode layer (second lower electrode layer) 202 laminated on the electrode layer 200. Furthermore, the anode electrode (lower electrode) of the light-emitting element (third light-emitting element) 110r consists of an electrode layer (first lower electrode layer) 200 and an electrode layer (third lower electrode layer) 204 laminated on the electrode layer 200. In this embodiment, the film thicknesses of the anode electrodes of each light-emitting element 110b, 110g, and 110r may differ from each other.

[0073] The anode electrode preferably functions not only as an electrode but also as a reflective layer. In such cases, it is preferable for the anode electrode to be made of a metal film with the highest possible reflectivity and work function in order to improve the efficiency of light extraction. Therefore, in this embodiment, it is preferable that the electrode layers 200, 202, and 204 constituting the anode electrode are formed from a metal film having the above-described properties. Examples of such metal films include metal films containing at least one of the elements and alloys of metals such as chromium (Cr), gold (Au), platinum (Pt), nickel (Ni), copper (Cu), molybdenum (Mo), titanium (Ti), tantalum (Ta), aluminum (Al), magnesium (Mg), iron (Fe), tungsten (W), and silver (Ag). Specific examples of the above alloys include aluminum (Al) alloys such as AlNi alloy or AlCu alloy, and silver (Ag) alloys such as MgAg alloy.

[0074] Furthermore, the outermost surface of each electrode layer 200, 202, and 204 may be covered with a transparent conductive film 208. For example, in the example shown in Figure 7, the upper and side surfaces of the electrode layer 200 of the light-emitting element 110b are covered with a transparent conductive film (first transparent conductive film) 208. Furthermore, the upper surface of the electrode layer 200 of the light-emitting element 110g is also covered with a transparent conductive film (first transparent conductive film) 208. In the anode electrode, by making the surface in contact with the light-emitting layer 210 covered with a transparent conductive film 208, it is possible to maintain high conductivity while increasing adhesion with the light-emitting layer 210. Furthermore, by appropriately selecting the material of the transparent conductive film 208, the hole injection barrier to the light-emitting layer 210 can be lowered in terms of work function, and the driving voltage of the display device 10 can be reduced. Furthermore, even if the outermost surface of each electrode layer 200, 202, and 204 is rough due to damage during the manufacturing process, the surface can be flattened by covering it with a transparent conductive film 208. By doing so, the light-emitting layer 210 stacked on each electrode layer 200, 202, and 204 can be made into a higher quality film.

[0075] In this embodiment, the transparent conductive film 208 may include, for example, at least one selected from the group consisting of transparent conductive oxides containing indium (In) (hereinafter referred to as "indium-based transparent conductive oxide"), transparent conductive oxides containing tin (Sn) (hereinafter referred to as "tin-based transparent conductive oxide"), and transparent conductive oxides containing zinc (Zn) (hereinafter referred to as "zinc-based transparent conductive oxide").

[0076] Indium-based transparent conductive oxides include, for example, indium tin oxide (ITO), indium zinc oxide (IZO), indium gallium oxide (IGO), indium gallium zinc oxide (IGZO), or fluorine-doped indium oxide (IFO). Tin-based transparent conductive oxides include, for example, tin oxide, antimond-doped tin oxide (ATO), or fluorine-doped tin oxide (FTO). Zinc-based transparent conductive oxides include, for example, zinc oxide, aluminum-doped zinc oxide (AZO), boron-doped zinc oxide, or gallium-doped zinc oxide (GZO).

[0077] In this embodiment, each electrode layer 200, 202, and 204 may be formed from the same material or from different materials. Variations in the configuration of each electrode layer 200, 202, and 204 will be described later as a second embodiment of this disclosure.

[0078] In this embodiment, the light-emitting layer 210 is formed on the anode electrode. In the following description, the light-emitting element 110 according to this embodiment will be described as having a light-emitting layer 210 made of an organic material as the light-emitting part (i.e., the light-emitting element 110 is an OLED), but this embodiment is not limited to this. In this embodiment, the light-emitting element 110 may have a light-emitting layer 210 made of an inorganic material, for example.

[0079] In this embodiment, the light-emitting layer 210 is, for example, a light-emitting layer that emits one of three colors of light: red, green, and blue. In this embodiment, the light-emitting layer 210 may also be a light-emitting layer that emits light of a color other than these. Furthermore, in this embodiment, the light-emitting layer 210 is provided individually for each light-emitting element 110, i.e., separated, as in the comparative example.

[0080] In detail, the light-emitting layer 210 has a structure in which, for example, a hole injection layer, a hole transport layer, light-emitting layers of each color, and an electron transport layer are sequentially stacked from bottom to top in the figure. Here, each light-emitting layer of the same color may be a multilayer structure in which different light-emitting materials that emit light of the same color are stacked. By layering light-emitting materials with different properties and separating their functions, localized degradation within the light-emitting layer is suppressed, and a highly efficient and long-life device can be obtained.

[0081] The hole-injection layer can be composed of, for example, hexaazatriphenylene (HAT).

[0082] The hall transport layer can be composed of, for example, α-NPD[N,N'-di(1-naphthyl)-N,N'-diphenyl-[1,1'-biphenyl]-4,4'-diamine].

[0083] The red light-emitting layer generates red light when an electric field is applied, as a portion of the holes injected from the anode electrode via the hole injection layer and hole transport layer recombine with a portion of the electrons injected from the cathode electrode 220 via the electron transport layer. The red light-emitting layer includes, for example, at least one of a red light-emitting material, a hole transport material, an electron transport material, and a dual charge transport material. The red light-emitting material may be fluorescent or phosphorescent. Specifically, the red light-emitting layer can be composed of, for example, 4,4-bis(2,2-diphenylbinin)biphenyl (DPVBi) mixed with 30% by weight of 2,6-bis[(4'-methoxydiphenylamino)styryl]-1,5-dicyanonaphthalene (BSN).

[0084] The blue light-emitting layer generates blue light when an electric field is applied, as some of the injected holes and some of the injected electrons recombine. The blue light-emitting layer includes, for example, at least one of the following: a blue light-emitting material, a hole-transporting material, an electron-transporting material, and a dual-charge-transporting material. The blue light-emitting material may be fluorescent or phosphorescent. Specifically, the blue light-emitting layer can be composed of, for example, a mixture of DPVBi and 2.5% by weight of 4,4'-bis[2-{4-(N,N-diphenylamino)phenyl}vinyl]biphenyl (DPAVBi).

[0085] The green light-emitting layer generates green light when an electric field is applied, as some of the injected holes and some of the injected electrons recombine. The green light-emitting layer includes, for example, at least one of the following: a green light-emitting material, a hole-transporting material, an electron-transporting material, and a dual-charge-transporting material. The green light-emitting material may be fluorescent or phosphorescent. Specifically, the green light-emitting layer can be composed of, for example, a mixture of DPVBi and 5% by weight of coumarin 6.

[0086] Examples of electron transport layers include BCP (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline), Alq3 (aluminum quinolinol), and Bphen (basophenanthroline). The electron transport layer consists of at least one layer and may include an electron transport layer doped with an alkali metal or alkaline earth metal.

[0087] An electron transport layer doped with an alkali metal or alkaline earth metal can be constructed by co-depositing, for example, 0.5 to 15% by weight, of an alkali metal such as lithium (Li), sodium (Na), potassium (K), rubidium (Rb), or cesium (Cs), or an alkaline earth metal such as magnesium (Mg), calcium (Ca), strontium (Sr), or barium (Ba), as a host material.

[0088] Furthermore, an electron injection layer may be provided between the electron transport layer and the cathode electrode 220. The electron injection layer is for increasing electron injection from the cathode and can be composed of an alkali metal or alkaline earth metal in its elemental form, a compound containing them, or a mixture containing them. For example, the electron injection layer can be composed of lithium (Li) or lithium fluoride (LiF), etc.

[0089] Furthermore, a buffer layer may be provided between the electron transport layer and the cathode electrode 220. The buffer layer is intended to mitigate process damage during film formation of the cathode electrode 220. The buffer layer may be made of, for example, Mg, magnesium silver alloy (MgAg), Ca, Li, LiF, lithium carbonate (Li ２ CO ３ ), Cs, Cesium carbonate (Cs ２ CO ３ It can be composed of elements of alkali metals or alkaline earth metals, compounds containing them, or mixtures containing them, such as )

[0090] The cathode electrode 220 is provided on the light-emitting layer 210. Similar to the anode electrode, the cathode electrode 220 is provided individually for each light-emitting element 110, i.e., separated. When a voltage is applied between the anode electrode and the cathode electrode 220, electrons are injected from the cathode electrode 220 into the light-emitting layer 210.

[0091] The cathode electrode 220 is preferably made of a transparent conductive material that has good light transmittance to visible light (for example, visible light with wavelengths of about 360 nm to 780 nm) and a small work function. For example, the cathode electrode 220 can be formed from a metal film containing at least one of the elements and alloys of metals such as aluminum (Al), magnesium (Mg), calcium (Ca), sodium (Na), and silver (Ag). Specific examples of alloys include aluminum (Al) alloys such as MgAg alloy or AlLi alloy, and silver (Ag) alloys. Furthermore, the cathode electrode 220 may be made from a transparent conductive oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), or zinc oxide (ZnO). The cathode electrode 220 may be made of a laminated film of a metal layer and a conductive oxide layer. Furthermore, if the cathode electrode 220 is made of a multilayer film, the metal layer may be provided on the light-emitting layer 210 side, or the transparent conductive oxide layer may be provided on the light-emitting layer 210 side.

[0092] The protective films 230 and 232 are provided to prevent the light-emitting layer 210 and the like from being damaged during the manufacturing process or contaminated by the external environment. The protective films 230 and 232 are preferably formed from, for example, inorganic and organic materials that have low hygroscopicity and light transmittance to visible light. Furthermore, the protective films 230 and 232 may have a single-layer structure or a multi-layer structure. For example, as an inorganic material, silicon oxide (SiO₂) may be used. ｘ ), silicon nitride (SiN ｘ ), silicon oxide nitride (SiO ｘ N ｙ ), titanium oxide (TiO ｘ ) and aluminum oxide (AlO ｘExamples of organic materials include thermosetting resins and photosensitive resins. Photosensitive resins include, for example, UV-curable resins. Specifically, examples of organic materials include acrylic resins, polyimide resins, novolac resins, epoxy resins, norbornene resins, and parylene resins. Furthermore, the protective films 230 and 232 may be ALD (Atomic Layer Deposition) layers to enhance the effect of suppressing moisture penetration.

[0093] Furthermore, in this embodiment, the protective film 230 is provided so as to cover the outer circumference of the cathode electrode 220. In other words, the protective film 230 can be said to have an opening (contact hole) 240 that exposes the central part of the upper surface of the cathode electrode 220. The wiring 242, which will be described later, extends to cover at least a part of the inner wall of the opening 240, and further extends to cover at least a part of the upper surfaces of the protective films 230 and 232. In addition, the wiring 242 electrically connects the cathode electrodes 220 of adjacent light-emitting elements 110 by contacting the cathode electrode 220 exposed through the opening 240.

[0094] The wiring 242 extends over a plurality of light-emitting elements 110, electrically connecting the cathode electrodes 220 of adjacent light-emitting elements 110 to each other. The wiring 242 can be formed from, for example, a transparent conductive oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), or zinc oxide (ZnO). Furthermore, the wiring 242 may be composed of, for example, a metal layer, or a metal layer and a transparent conductive oxide layer.

[0095] As described above, in this embodiment, the anode electrodes of the other light-emitting elements 110g and 110r, which are formed adjacent to the light-emitting element 110b and are the second and subsequent elements, consist of a laminate of electrode layer 200 and electrode layers 202 and 204. Therefore, in this embodiment, the upper surface of the anode electrodes of the light-emitting elements 110g and 110r is not significantly lower than the height of the upper surface of the light-emitting element 110b. Consequently, according to this embodiment, the material for the light-emitting layers 210g and 210r is easily deposited on the anode electrodes of the light-emitting elements 110g and 110r. As a result, according to this embodiment, the occurrence of areas where the light-emitting layers 210g and 210r are locally thinned (vignetting) 300 is suppressed, and the light-emitting layers 210g and 210r of the second and subsequent light-emitting elements 110g and 110r can be laminated so that their film thickness is uniform.

[0096] In this embodiment, the pixel 20 is not limited to the form shown in Figure 7, but can be transformed into various forms.

[0097] <<4. Second Embodiment>> <4.1 Detailed Configuration> Next, with reference to Figure 8, the detailed configuration of the pixel 20 according to the second embodiment of the present disclosure will be described. Figure 8 is a cross-sectional view illustrating an example of the configuration of the pixel 20 according to this embodiment, and more specifically corresponds to a cross-section when the substrate 40 is cut along its film thickness direction. In the second embodiment, variations in the configuration of the anode electrode of each light-emitting element 110 will be described.

[0098] In this embodiment, as in the first embodiment, the anode electrode of the light-emitting element 110b consists of an electrode layer 200, as shown in Figure 8. The anode electrode of the light-emitting element 110g consists of an electrode layer 200 and an electrode layer 202 laminated on the electrode layer 200. Furthermore, the anode electrode of the light-emitting element 110r consists of an electrode layer 200 and an electrode layer 204 laminated on the electrode layer 200.

[0099] Furthermore, in this embodiment, as in the first embodiment, as shown in Figure 8, the upper and side surfaces of the electrode layer 200 of the light-emitting element 110b are covered with a transparent conductive film (first transparent conductive film) 208. In addition, the upper surface of the electrode layer 200 of the light-emitting element 110g is also covered with a transparent conductive film (first transparent conductive film) 208. Furthermore, in this embodiment, unlike the first embodiment, the upper surface of the electrode layer 202 of the light-emitting element 110g is also covered with a transparent conductive film (second transparent conductive film) 208g. In addition, in this embodiment, the upper surface of the electrode layer 204 of the light-emitting element 110r is also covered with a transparent conductive film (third transparent conductive film) 208r.

[0100] As described above, in this embodiment, by making the surfaces in contact with the light-emitting layers 210g and 210r transparent conductive films 208g and 208r, the anode electrodes of the light-emitting elements 110g and 110r can maintain high conductivity while achieving high adhesion to the light-emitting layers 210g and 210r. Furthermore, in this embodiment, by appropriately selecting the material of the transparent conductive films 208g and 208r, the hole injection barrier to the light-emitting layers 210g and 210r can be lowered in terms of work function, and the driving voltage of the display device 10 can be reduced.

[0101] Furthermore, in this embodiment, for example, two or three of the transparent conductive films 208, 208g, and 208r of each light-emitting element 110 may be formed from the same material or from different materials. Also, in this embodiment, the film thicknesses of two or three of the transparent conductive films 208, 208g, and 208r of each light-emitting element 110 may be the same or different. For example, in this embodiment, the transparent conductive film 208 covering the electrode layer 200 may be formed from an ITO film, and the transparent conductive films 208g and 208r covering the electrode layers 202 and 204 may be formed from IZO films.

[0102] In this embodiment, the pixel 20 is not limited to the form shown in Figure 8, but can be transformed into various forms.

[0103] For example, in the first and second embodiments, two or three of the electrode layers 200, 202, and 204 of each light-emitting element 110 may be formed from the same material or from different materials. Also, in the first and second embodiments, the film thickness of two or three of the electrode layers 200, 202, and 204 of each light-emitting element 110 may be the same or different. In this embodiment, for example, electrode layers 200, 202, and 204 may be formed from Ag films. For example, in this embodiment, electrode layer 200 may be formed from an Al film, and electrode layers 202 and 204 may be formed from Ag films.

[0104] <4.2 Modified Examples> Next, with reference to Figure 9, the detailed configuration of the pixel 20 according to a modified example of this embodiment will be described. Figure 9 is a cross-sectional view illustrating an example of the configuration of the pixel 20 according to a modified example of this embodiment, and in detail corresponds to a cross-section obtained when the substrate 40 is cut along its film thickness direction.

[0105] In this embodiment, as in the first embodiment, the anode electrode of the light-emitting element 110b consists of an electrode layer 200, as shown in Figure 8. The anode electrode of the light-emitting element 110g consists of an electrode layer 200 and an electrode layer 202 laminated on the electrode layer 200. Furthermore, in this embodiment, unlike the first embodiment, the anode electrode of the light-emitting element 110r consists of an electrode layer 200, an electrode layer 204 laminated on the electrode layer 200, and an electrode layer 206 laminated on the electrode layer 204. In other words, the anode electrode of the light-emitting element 110r has a laminated structure of electrode layer 200, electrode layer 204, and electrode layer 206.

[0106] In other words, in this modified example, the anode electrode of the light-emitting element 110 may be a stack of multiple reflective material layers, and the number of stacks is not particularly limited.

[0107] <<5. Third Embodiment>> <5.1 Detailed Configuration> Next, with reference to Figure 10, the detailed configuration of the pixel 20 according to the third embodiment of the present disclosure will be described. Figure 10 is a cross-sectional view illustrating an example of the configuration of the pixel 20 according to this embodiment, and more specifically corresponds to a cross-section when the substrate 40 is cut along its film thickness direction. In the third embodiment of the present disclosure, variations in the connection of the cathode electrodes 220 of each light-emitting element 110 will be described.

[0108] In the first embodiment described above, the cathode electrodes 220 of adjacent light-emitting elements 110 were electrically connected by wiring 242 that extends to cover the inner wall of the opening 240 of the protective film 230 and the upper surfaces of the protective films 230 and 232.

[0109] Furthermore, in this embodiment, as shown in Figure 10, the wiring 242 located between adjacent light-emitting elements 110 is provided on an electrode layer (fourth lower electrode layer) 250 located between adjacent light-emitting elements 110 and at the same height as the electrode layer (first lower electrode layer) 200.

[0110] The electrode layer 250 can be formed simultaneously with the electrode layer 200, which forms part of the anode electrode of the light-emitting element 110. More specifically, when forming the electrode layer (first lower electrode layer) 200 on the substrate 40, the electrode layer 250 can be formed simultaneously with the electrode layer 200 by leaving an electrode layer not only in the area of ​​the light-emitting element 110 but also between adjacent light-emitting elements 110. Since the electrode layer 250 can be formed as described above, it can be formed from a metal film containing at least one of the elements and alloys of metals such as chromium (Cr), gold (Au), platinum (Pt), nickel (Ni), copper (Cu), molybdenum (Mo), titanium (Ti), tantalum (Ta), aluminum (Al), magnesium (Mg), iron (Fe), tungsten (W), and silver (Ag), similar to the electrode layer 200.

[0111] Furthermore, in this embodiment, the resistance of the wiring 242 can be reduced by forming the wiring 242 in contact with the electrode layer 250, which is made of a material that functions as an electrode. As a result, according to this embodiment, the resistance of the wiring 242 can be reduced, and therefore the driving voltage of the display device 10 can be reduced.

[0112] In this embodiment, the pixel 20 is not limited to the form shown in Figure 10, but can be transformed into various forms.

[0113] <5.2 Modifications> (Modification 1) Next, with reference to Figure 11, the detailed configuration of the pixel 20 according to Modification 1 of this embodiment will be described. Figure 11 is a cross-sectional view illustrating an example of the configuration of the pixel 20 according to Modification 1 of this embodiment, and in detail corresponds to a cross-section when the substrate 40 is cut along its film thickness direction.

[0114] In the first embodiment described above, an opening 240 is provided in the protective film 230 that exposes the upper surface of the cathode electrode 220, and the wiring 242 is extended to cover at least a portion of the inner wall of the opening 240, thereby electrically connecting the cathode electrodes 220 of adjacent light-emitting elements 110. On the other hand, in this modified example 1, as shown in Figure 11, the wiring 242 is extended to the side surface of the protective film 230 without providing an opening 240, thereby electrically connecting the wiring 242 to the outer periphery of the cathode electrode 220. In this modified example 1, the cathode electrodes 220 of adjacent light-emitting elements 110 are electrically connected to each other by the upper and side surfaces of the protective film 230 and by the wiring 242 extending from the upper surface of the protective film 232.

[0115] Thus, in this modified example 1, since the protective film 230 does not have an opening 240 that exposes the upper surface of the cathode electrode 220, it is possible to avoid damage to the cathode electrode 220 and the light-emitting layer 210 during the manufacturing process.

[0116] (Modification 2) Next, with reference to Figure 12, the detailed configuration of the pixel 20 according to Modification 2 of this embodiment will be described. Figure 12 is a cross-sectional view illustrating an example of the configuration of the pixel 20 according to Modification 2 of this embodiment, and in detail corresponds to a cross-section when the substrate 40 is cut along its film thickness direction.

[0117] In this modified example 2, unlike the first embodiment, a protective film 230 is not provided on the cathode electrode 220, as shown in Figure 12. Therefore, in this modified example 2, the wiring 242 extends over the cathode electrodes 220 and protective film 232 of the multiple light-emitting elements 110, electrically connecting the cathode electrodes 220 of adjacent light-emitting elements 110 to each other. Furthermore, in this modified example 2, the light-emitting elements 110 are covered with a protective film 238. It is preferable that the protective film 238, like the protective films 230 and 232, be formed from, for example, an inorganic material or organic material that has low hygroscopicity and light transmittance to visible light.

[0118] In this modified example 2, the protective film 230 is not provided on the cathode electrode 220b of the light-emitting element 110b. Therefore, the height of the upper surface of the light-emitting element 110b is lower. Furthermore, in this modified example 2 as well, the anode electrode of other light-emitting elements 110g adjacent to the light-emitting element 110b is a stack of electrode layer 200 and electrode layer 202, so its upper surface is not significantly lower than the height of the upper surface of the light-emitting element 110b. Therefore, in this modified example 2, the material for the light-emitting layer 210g is more easily deposited on the anode electrode of the light-emitting element 110g. As a result, in this modified example 2 as well, the occurrence of areas where the light-emitting layer 210g is locally thin (vignetting) 300 is suppressed, and the light-emitting layers 210g of the second and subsequent light-emitting elements 110g can be stacked so that their film thickness is uniform.

[0119] <<6. Fourth Embodiment>> Next, the detailed configuration of the pixel 20 according to the fourth embodiment of the present disclosure will be described with reference to Figures 13A to 13C. Figures 13A to 13C are plan views illustrating an example of the configuration of the pixel 20 according to this embodiment, and more specifically, they correspond to the plane when the substrate 40 is viewed from above when the substrate 40 is cut along the line A-A shown in Figure 7. Note that in Figures 13A to 13C, the wiring 242 is not shown, and each light-emitting element 110 can be assigned any color. In the fourth embodiment of the present disclosure, variations in the planar shape of each light-emitting element 110 will be described.

[0120] In this embodiment, for example, as shown in Figure 13A, the planar shape of the light-emitting element 110 may be square (an example of a rectangular shape). Furthermore, the light-emitting elements 110 may be arranged in a square configuration (each light-emitting element 110 is placed at the vertices of a square), as shown in Figure 13A.

[0121] Furthermore, in this embodiment, the planar shape of the light-emitting element 110 may be rectangular (an example of a rectangular shape), as shown in Figure 13B. In addition, the light-emitting elements 110 may be arranged in a stripe pattern, as shown in Figure 13B.

[0122] Furthermore, in this embodiment, for example, as shown in Figure 13C, the planar shape of the light-emitting element 110 may be hexagonal (an example of a polygonal shape). Furthermore, the light-emitting elements 110 may be arranged in a delta array (each light-emitting element 110 is positioned at the vertices of a triangle), as shown in Figure 13C.

[0123] In this embodiment, the pixel 20 is not limited to the form shown in Figures 13A to 13C, but can be transformed into various forms. For example, the planar shape of the light-emitting element 110 may be circular or elliptical. Furthermore, in this embodiment, for example, the size of the light-emitting element 110 on the plane may differ depending on the color of light emitted by the light-emitting element 110.

[0124] <<7. Fifth Embodiment>> Next, with reference to Figures 14A to 14D, a fifth embodiment of the present disclosure will be described in detail as an example of a method for manufacturing a pixel 20 according to the first embodiment. Figures 14A to 14D are cross-sectional views for illustrating the method for manufacturing a pixel 20 according to this embodiment, and show a cross-section of the pixel 20 in each step.

[0125] In this embodiment, as previously described, a mask deposition process is used to sequentially fabricate light-emitting elements 110 that emit red, green, and blue light and are separated from each other, by applying red, green, and blue paint (RGB painting).

[0126] First, in this embodiment, an electrode layer (first lower electrode layer) 200 is formed on the substrate 40. Specifically, for example, a metal film can be deposited by sputtering, and then patterned using lithography and dry etching to form multiple electrode layers 200. Next, a transparent conductive film 208 is formed to cover the electrode layer 200. Then, a light-emitting layer (first light-emitting layer) 210b that emits blue light is laminated over the entire surface of the substrate 40 including the electrode layer 200, for example, by vapor deposition. Then, as the cathode electrode 220b of the light-emitting element 110b, for example, a transparent conductive material is deposited over the entire surface of the substrate 40 by sputtering. Furthermore, a protective film 230 is deposited over the entire surface of the substrate 40, for example, by CVD. In this way, the configuration shown in the upper part of Figure 14A can be obtained.

[0127] Next, as shown in the second row from the top of Figure 14A, a resist 400 is formed to cover the area on the protective film 230 that will become the light-emitting element 110b. Subsequently, as shown in the third row from the top of Figure 14A, the protective film 230, cathode electrode 220b, and light-emitting layer 210b are processed (divided) together along the resist pattern, for example by a dry etching method, and then the resist is removed. In this way, the stacked structure of the first light-emitting element 110b is fabricated.

[0128] Next, as shown in the fourth row from the top of Figure 14A, a protective film 232 is laminated over the entire surface of the substrate 40, which includes the laminated structure of the light-emitting element 110b and the electrode layer 200, using, for example, a CVD method. Then, as shown in the bottom row of Figure 14A, the protective film 232 is removed from the areas where it is laminated on the side walls of the laminated structure of the light-emitting element 110b, using, for example, a dry etching method. In this way, the light-emitting element 110b is manufactured.

[0129] Next, as shown in the upper part of Figure 14B, an electrode layer (second lower electrode layer) 202 is laminated over the entire surface of the substrate 40 including the electrode layer 200. In this way, the height of the upper surface of the anode electrode of the light-emitting element 110g is increased. Furthermore, as shown in the second row from the top of Figure 14B, a SiN film 260 is deposited over the entire surface of the substrate 40 by CVD or the like. Then, as shown in the third row from the top of Figure 14B, a resist 402 is formed to cover the areas on the SiN 260 that will become the light-emitting elements 110g and 110r.

[0130] Next, as shown in the fourth row from the top of Figure 14B, the electrode layer 202 located on the upper surface of the light-emitting element 110b is etched. Furthermore, as shown in the lower row of Figure 14B, etching is performed over the entire surface of the substrate 40.

[0131] Furthermore, in this embodiment, as shown in the upper part of Figure 14C, a light-emitting layer (second light-emitting layer) 210g that emits green light, a cathode electrode 220g, and a protective film 230g are sequentially laminated on the entire surface of the substrate 40. Next, as shown in the second row from the top of Figure 14C, a resist 404 is formed to cover the area on the protective film 230g that will become the light-emitting element 110g. Subsequently, as shown in the third row from the top of Figure 14C, the protective film 230g, cathode electrode 220g, and light-emitting layer 210g are processed together along the resist pattern, for example by a dry etching method, and then the resist is removed. In this way, the laminated structure of the second light-emitting element 110g is fabricated. At this time, the electrode layer 202 on the electrode layer 200 of the light-emitting element 110r is also etched.

[0132] Next, as shown in the fourth row from the top of Figure 14C, a protective film 232g is laminated over the entire surface of the substrate 40, which includes the laminated structure of the light-emitting elements 110b and 110g and the electrode layer 200, using, for example, a CVD method. Then, as shown in the bottom row of Figure 14C, the protective film 232g is removed from the areas where it is laminated on the side walls of the laminated structure of the light-emitting elements 110b and 110g, using, for example, a dry etching method. In this way, the light-emitting element 110g is manufactured.

[0133] Next, as shown in the upper part of Figure 14D, an electrode layer (third lower electrode layer) 204 is laminated over the entire surface of the substrate 40 including the electrode layer 200. In this way, the height of the upper surface of the anode electrode of the light-emitting element 110r is increased. Furthermore, as shown in the second row from the top of Figure 14D, the electrode layer 204 located on the upper surface of the light-emitting elements 110b and 110g is etched using the same procedure as before.

[0134] In this embodiment, a light-emitting layer 210r that emits red light, a cathode electrode 220r, and a protective film 230r are sequentially laminated on the entire surface of the substrate 40 using the same procedure as before. Next, the protective film 230r, the cathode electrode 220r, and the light-emitting layer 210r are processed together, for example by a dry etching method, to create the laminated structure of the third light-emitting element 110r. Furthermore, a protective film 232r is laminated on the entire surface of the substrate 40, including the laminated structure of light-emitting elements 110b, 110g, and 110r. Then, for example by a dry etching method, the protective film 232r is removed, leaving the protective film 232r laminated on the side walls of the laminated structure of light-emitting elements 110b, 110g, and 110r. In this way, the light-emitting element 110b is manufactured, as shown in the third row from the top in Figure 14D.

[0135] Furthermore, as shown in the fourth row from the top of Figure 14D, a resist 406 is formed with openings that expose the central upper surfaces of the light-emitting elements 110b, 110g, and 110r. Subsequently, for example, by dry etching, a portion of the protective films 230, 230g, and 230r is removed along the pattern of the resist 406 to form openings 240 that expose the central upper surfaces of the cathode electrodes 220b, 220g, and 220r. Then, an IZO film, for example, which will become the wiring 242, is deposited. In this way, the configuration shown in the lower row of Figure 14D can be obtained.

[0136] Furthermore, the display device 10 can be manufactured by patterning the wiring 242 and forming a protective film (not shown) or an on-chip lens (not shown).

[0137] Furthermore, this embodiment is not limited to the manufacturing method shown in Figures 14A to 14D.

[0138] Furthermore, as described above, the display device 10 according to this embodiment can be manufactured using methods, apparatus, and conditions commonly used in the manufacture of semiconductor devices. In other words, the display device 10 according to this embodiment can be manufactured using existing semiconductor device manufacturing methods.

[0139] Examples of the methods mentioned above include PVD (Physical Vapor Deposition), CVD, and ALD (Atomic Layer Deposition). PVD methods include vacuum deposition, EB (electron beam) deposition, various sputtering methods (magnetron sputtering, RF (Radio Frequency)-DC (Direct Current) coupled bias sputtering, ECR (Electron Cyclotron Resonance) sputtering, opposing target sputtering, high-frequency sputtering, etc.), ion plating, laser ablation, molecular beam epitaxy (MBE (Molecular Beam Epitaxy)), and laser transfer. Furthermore, CVD methods include plasma CVD, thermal CVD, metal-organic (MO) CVD, and photo-CVD. Other methods include electrolytic plating, electroless plating, spin coating, immersion, casting, microcontact printing, drop casting, various printing methods such as screen printing, inkjet printing, offset printing, gravure printing, and flexographic printing, as well as stamping, spraying, air doctor coater, blade coater, rod coater, knife coater, squeeze coater, reverse roll coater, transfer roll coater, gravure coater, kiss coater, cast coater, spray coater, slit orifice coater, and calender coater. Patterning methods include chemical etching such as shadow masks, laser transfer, and photolithography, as well as physical etching using ultraviolet light or lasers. In addition, planarization techniques include CMP (Chemical Mechanical Polishing), laser planarization, and reflow.

[0140] <<8. Sixth Embodiment>> <8.1 Detailed Configuration> Next, with reference to Figure 15, the detailed configuration of the pixel 20 according to the sixth embodiment of the present disclosure will be described. Figure 15 is a cross-sectional view illustrating an example of the configuration of the pixel 20 according to this embodiment, and more specifically corresponds to a cross-section obtained when the substrate 40 is cut along its film thickness direction.

[0141] In the embodiments of the present disclosure described so far, the anode electrodes of the second and subsequent light-emitting elements 110g and 110r, which are adjacent to the light-emitting element 110b, are formed from a lamination of electrode layer 200 and electrode layers 202 and 204. Therefore, in these embodiments, the upper surface of the anode electrodes of the light-emitting elements 110g and 110r is not significantly lower than the height of the upper surface of the light-emitting element 110b. Consequently, according to these embodiments, the material for the light-emitting layers 210g and 210r is easily deposited on the anode electrodes of the light-emitting elements 110g and 110r. As a result, according to these embodiments, the occurrence of areas where the light-emitting layers 210g and 210r are locally thinned (vignetting) 300 is suppressed, and the light-emitting layers 210g and 210r of the second and subsequent light-emitting elements 110g and 110r can be laminated so that their film thickness is uniform.

[0142] In these embodiments, the anode electrodes of the light-emitting elements 110g and 110r are formed by laminating electrode layer 200 and electrode layers 202 and 204. However, when the film thickness of these electrode layers 202 and 204 is increased, the processing of these electrode layers 202 and 204 takes time because they are made of metal films, making it difficult to suppress increases in the manufacturing time and manufacturing cost of the display device 10.

[0143] Therefore, in the sixth embodiment of the present disclosure, as shown in Figure 15, adjustment layers (first and second adjustment layers) 280 for adjusting the film thickness are provided on the electrode layer 270 as components of the anode electrodes of the light-emitting elements 110g and 110r. In this embodiment, the adjustment layer 280 is formed from an insulating material that is easy to process. Furthermore, in this embodiment, an electrode layer 272 is provided so as to cover the adjustment layer 280. The electrode layer 272 has a portion on the adjustment layer 280 (first and third electrode members) and a portion that covers at least a part of the side wall of the adjustment layer 280 and electrically connects the portion on the adjustment layer 280 and the electrode layer 270 (second and fourth electrode members).

[0144] With this configuration, in this embodiment, as in the embodiments described above, the upper surface of the anode electrode of the light-emitting element 110g, 110r is not significantly lower than the height of the upper surface of the light-emitting element 110b. Therefore, according to this embodiment, the material for the light-emitting layer 210g, 210r is easily deposited on the anode electrode of the light-emitting element 110g, 110r. As a result, according to this embodiment, the occurrence of areas where the light-emitting layer 210g, 210r is locally thinned (vignetting) 300 is suppressed, and the light-emitting layers 210g, 210r of the second and subsequent light-emitting elements 110g, 110r can be stacked so that their film thickness is uniform.

[0145] Furthermore, in this embodiment, even when the adjustment layer 280 is made thicker, the adjustment layer 280 is formed from an easily processed insulating material, so the processing time can be shortened compared to the case of a metal film, thereby suppressing increases in the manufacturing time and manufacturing costs of the display device 10.

[0146] The details of the configuration of this embodiment will now be described. In this embodiment as well, as shown in Figure 15, each light-emitting element 110 has an anode electrode (lower electrode) that reflects light, provided on a substrate 40, a light-emitting layer 210 (specifically, light-emitting layers 210b, 210g, 210r) laminated on the anode electrode, a cathode electrode (upper electrode) 220 (specifically, cathode electrodes 220b, 220g, 220r) laminated on the light-emitting layer 210, and protective films 290, 291, 292, 293, 294, 295, 296 laminated on the cathode electrode 220 that transmit light from the light-emitting layer 210. Furthermore, in this embodiment as shown in Figure 15, each of these layers may be processed so that the side surface of the light-emitting layer 210 and the side surface of the cathode electrode 220 are flush. Furthermore, the sides of each light-emitting element 110 are covered by protective films 290, 291, 292, 293, 294, 295, and 296.

[0147] In this embodiment as well, the anode electrode of each light-emitting element 110 is provided on the substrate 40 individually for each light-emitting element 110, that is, separated from each other.

[0148] In this embodiment, as shown in Figure 15, the anode electrode (lower electrode) of the light-emitting element 110b consists of an electrode layer (first lower electrode layer) 270. The anode electrode (lower electrode) of the light-emitting element (second light-emitting element) 110g has an electrode layer (first lower electrode layer) 270, an adjustment layer (first adjustment layer) 280 provided on the electrode layer 270, and an electrode layer 272 provided so as to cover the adjustment layer 280. Furthermore, the electrode layer 272 has a portion on the adjustment layer 280 (first electrode member) and a portion (second electrode member) that covers at least a part of the side wall of the adjustment layer 280 and electrically connects the portion on the adjustment layer 280 and the electrode layer 270. Furthermore, the anode electrode (lower electrode) of the light-emitting element 110r has an electrode layer (first lower electrode layer) 270, an adjustment layer (second adjustment layer) 280 provided on the electrode layer 270, and an electrode layer 272 provided so as to cover the adjustment layer 280. Furthermore, the electrode layer 272 has a portion on the adjustment layer 280 (third electrode member) and a portion that covers at least a part of the side wall of the adjustment layer 280 and electrically connects the portion on the adjustment layer 280 and the electrode layer 270 (fourth electrode member). In this embodiment, the film thickness of the anode electrodes of each light-emitting element 110b, 110g, and 110r may be different from each other. Also, in the example of Figure 15, the film thickness of the adjustment layer 280 of the anode electrode of the light-emitting element 110g and the film thickness of the adjustment layer 280 of the anode electrode of the light-emitting element 110r are different from each other.

[0149] In this embodiment, it is preferable that the electrode layers 270 and 272 constituting the anode electrode are formed from a metal film that not only functions as an electrode but also functions as a reflective layer. Examples of such metal films include metal films containing at least one of the elements and alloys of metals such as chromium (Cr), gold (Au), platinum (Pt), nickel (Ni), copper (Cu), molybdenum (Mo), titanium (Ti), tantalum (Ta), aluminum (Al), magnesium (Mg), iron (Fe), tungsten (W), and silver (Ag). Specific examples of the alloys include aluminum (Al) alloys such as AlNi alloy or AlCu alloy, and silver (Ag) alloys such as MgAg alloy.

[0150] Furthermore, in this embodiment, the electrode layer 270 has a larger area than the adjustment layer 280, which will be described later, and it is preferable that its upper surface is exposed from the outer periphery of the adjustment layer 280. In this way, the exposed portion of the electrode layer 270 can cover at least a part of the side wall of the adjustment layer 280, in other words, it can be electrically connected (in contact) with the portion of the electrode layer 272 that extends from the upper surface of the adjustment layer 280 to the side surface of the adjustment layer 280. In addition, in this embodiment, the portion of the electrode layer 272 that extends from the upper surface of the adjustment layer 280 to the side surface of the adjustment layer 280 only needs to cover at least a part of the side surface of the adjustment layer 280, and it is more preferable that it covers the entire side surface. In this way, the resistance can be reduced when electrically connecting the portion on the adjustment layer 280 and the electrode layer 270.

[0151] Furthermore, in this embodiment, the adjustment layer 280 is formed from an insulating material that is easy to process, as described above. Specifically, the insulating material is, for example, silicon oxide (SiO2). ｘ ), silicon nitride (SiN ｘ ), silicon oxide nitride (SiO ｘ N ｙ ), titanium oxide (TiO ｘ ) and aluminum oxide (AlO ｘ Examples include:

[0152] In this embodiment as well, the protective films 290 to 296 are provided to suppress damage to the light-emitting layer 210 and the like during the manufacturing process and contamination from the external environment. The protective films 290 to 296 are preferably formed from, for example, inorganic and organic materials that have low hygroscopicity and light transmittance to visible light. Furthermore, the protective films 290 to 296 may have a single-layer structure or a multi-layer structure. For example, as an inorganic material, silicon oxide (SiO₂) ｘ ), silicon nitride (SiN ｘ ), silicon oxide nitride (SiO ｘ N ｙ ), titanium oxide (TiO ｘ ) and aluminum oxide (AlO ｘExamples of organic materials include thermosetting resins and photosensitive resins. Photosensitive resins include, for example, UV-curable resins. Specifically, examples of organic materials include acrylic resins, polyimide resins, novolac resins, epoxy resins, norbornene resins, and parylene resins. Furthermore, protective films 290-296 may be ALD (Atomic Layer Deposition) layers to enhance the effect of suppressing moisture penetration.

[0153] Furthermore, in this embodiment, the protective films 290, 292, and 294 have openings (contact holes) 240 that expose the central portion of the upper surface of the cathode electrode 220. The wiring 242 extends to cover at least a portion of the inner wall of the opening 240, and further extends to cover at least a portion of the upper surface of the protective films 290, 292, and 294 (specifically, the upper surface of the protective film 295). In addition, the wiring 242 contacts the cathode electrode 220 exposed through the opening 240, thereby electrically connecting the cathode electrodes 220 of adjacent light-emitting elements 110.

[0154] Furthermore, in this embodiment, the planar shape of the light-emitting element 110 may be square (an example of a rectangular shape), as shown in Figure 13A. In addition, the light-emitting elements 110 may be arranged in a square pattern, as shown in Figure 13A.

[0155] Furthermore, in this embodiment, the planar shape of the light-emitting element 110 may be rectangular (an example of a rectangular shape), as shown in Figure 13B. In addition, the light-emitting elements 110 may be arranged in a stripe pattern, as shown in Figure 13B.

[0156] Furthermore, in this embodiment, the planar shape of the light-emitting element 110 may be a hexagon (an example of a polygonal shape), as shown in Figure 13C. Additionally, the light-emitting elements 110 may be arranged in a delta configuration, as shown in Figure 13C.

[0157] In this embodiment, the pixel 20 is not limited to the form shown in Figures 13A to 13C, but can be transformed into various forms. For example, the planar shape of the light-emitting element 110 may be circular or elliptical. Furthermore, in this embodiment, for example, the size of the light-emitting element 110 on the plane may differ depending on the color of light emitted by the light-emitting element 110.

[0158] As described above, in this embodiment, the upper surface of the anode electrode of the light-emitting element 110g, 110r is not significantly lower than the height of the upper surface of the light-emitting element 110b. Therefore, according to this embodiment, the material for the light-emitting layer 210g, 210r is easily deposited on the anode electrode of the light-emitting element 110g, 110r. As a result, according to this embodiment, the occurrence of areas where the light-emitting layer 210g, 210r is locally thinned (vignetting) 300 is suppressed, and the light-emitting layers 210g, 210r of the second and subsequent light-emitting elements 110g, 110r can be laminated so that their film thickness is uniform. Furthermore, in this embodiment, even if the adjustment layer 280 is thickened, since the adjustment layer 280 is formed from an easily processed insulating material, the processing time can be shortened compared to the case of a metal film, thereby suppressing an increase in the manufacturing time and manufacturing cost of the display device 10.

[0159] In this embodiment, the pixel 20 is not limited to the form shown in Figure 15, but can be transformed into various forms.

[0160] <8.2 Modifications> (Modification 1) Next, with reference to Figure 16, the detailed configuration of the pixel 20 according to Modification 1 of this embodiment will be described. Figure 16 is a cross-sectional view illustrating an example of the configuration of the pixel 20 according to Modification 1 of this embodiment, and in detail corresponds to a cross-section when the substrate 40 is cut along its film thickness direction.

[0161] In the above-described embodiment, as shown in Figure 15, the film thickness of the adjustment layer 280 of the anode electrode of the light-emitting element 110g and the film thickness of the adjustment layer 280 of the anode electrode of the light-emitting element 110r are different from each other. On the other hand, in this modified example 1, as shown in Figure 16, the film thickness of the adjustment layer 280 of the anode electrode of the light-emitting element 110g and the film thickness of the adjustment layer 280 of the anode electrode of the light-emitting element 110r are the same. In other words, in this embodiment and modified example 1, the film thickness of the adjustment layer 280 is not particularly limited.

[0162] (Modification 2) Next, with reference to Figure 17, the detailed configuration of the pixel 20 according to Modification 2 of this embodiment will be described. Figure 17 is a cross-sectional view illustrating an example of the configuration of the pixel 20 according to Modification 2 of this embodiment, and in detail corresponds to a cross-section when the substrate 40 is cut along its film thickness direction.

[0163] In this modified example 2, as shown in Figure 17, the anode electrode of the light-emitting element 110b consists of an electrode layer 270. The anode electrode of the light-emitting element 110g has an electrode layer 270, an electrode layer 274 laminated on the electrode layer 270, an adjustment layer 280 provided on the electrode layer 270, and an electrode layer 272 provided so as to cover the adjustment layer 280. Furthermore, in this modified example 2, the anode electrode of the light-emitting element 110r has an electrode layer 270, an electrode layer 274 laminated on the electrode layer 270, an adjustment layer 280 provided on the electrode layer 270, and an electrode layer 272 provided so as to cover the adjustment layer 280. In this modified example 2, the electrode layer 270 and the electrode layer 274 are made of different materials.

[0164] In this modified example 2, it is preferable that the electrode layer 274 is formed from a metal film that possesses not only the function of an electrode but also the function of a reflective layer. Examples of such metal films include metal films containing at least one of the elements and alloys of metals such as chromium (Cr), gold (Au), platinum (Pt), nickel (Ni), copper (Cu), molybdenum (Mo), titanium (Ti), tantalum (Ta), aluminum (Al), magnesium (Mg), iron (Fe), tungsten (W), and silver (Ag). Specific examples of the alloys include aluminum (Al) alloys such as AlNi alloy or AlCu alloy, and silver (Ag) alloys such as MgAg alloy. Alternatively, in this modified example 2, the electrode layer 274 may be formed from a transparent conductive oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), or zinc oxide (ZnO).

[0165] In other words, in this modified example 2, the layer located below the adjustment layer 280 among the anode electrodes of the light-emitting element 110 may be a stack of multiple reflective material layers, and the number of such stacks is not particularly limited.

[0166] Furthermore, in this modified example 2, the electrode layer 274 has a larger area than the adjustment layer 280, which will be described later, and it is preferable that its upper surface is exposed from the outer circumference of the adjustment layer 280. In this way, the exposed portion of the electrode layer 274 can cover at least a part of the side wall of the adjustment layer 280, in other words, it can be electrically connected (in contact) with the portion of the electrode layer 272 that extends from the upper surface of the adjustment layer 280 to the side surface of the adjustment layer 280. In this embodiment, the portion of the electrode layer 272 that extends from the upper surface of the adjustment layer 280 to the side surface of the adjustment layer 280 only needs to cover at least a part of the side surface of the adjustment layer 280, and it is more preferable that it covers the entire side surface. In this way, the resistance can be reduced when electrically connecting the portion on the adjustment layer 280 and the electrode layer 270.

[0167] (Modification 3) Next, with reference to Figure 18, the detailed configuration of the pixel 20 according to Modification 3 of this embodiment will be described. Figure 18 is a cross-sectional view illustrating an example of the configuration of the pixel 20 according to Modification 3 of this embodiment, and in detail corresponds to a cross-section when the substrate 40 is cut along its film thickness direction.

[0168] In this modified example 3, as shown in Figure 18, the upper surface of the electrode layer 270 of the light-emitting element 110b is covered with a transparent conductive film 209. Furthermore, the upper surface of the electrode layer 272 of the light-emitting element 110g is also covered with a transparent conductive film 209.

[0169] As described above, in this modified example 3, by making the surface in contact with the light-emitting layers 210g and 210r a transparent conductive film 209, the anode electrodes of the light-emitting elements 110g and 110r can maintain high conductivity while improving adhesion to the light-emitting layers 210g and 210r. Furthermore, in this modified example 3, by appropriately selecting the material of the transparent conductive film 209, the hole injection barrier to the light-emitting layers 210g and 210r can be lowered in terms of work function, and the driving voltage of the display device 10 can be reduced.

[0170] Furthermore, in this modified example 3, for example, the transparent conductive film 209 of each light-emitting element 110 may be formed from the same material or from different materials. For example, in this modified example 3, the transparent conductive film 209 of the light-emitting element 110g may be formed from an ITO film, and the transparent conductive film 209 of the light-emitting elements 110b and 110r may be formed from an IZO film. Also, in this modified example 3, the film thickness of two or more of the transparent conductive films 209 of each light-emitting element 110 may be the same or different. In addition, in this modified example 3, the transparent conductive film 209 of each light-emitting element 110 may be a laminate of a transparent conductive film and a metal film. In this case, the layer on the light-emitting layer 210 side may be a transparent conductive film.

[0171] (Modification 4) Next, with reference to Figure 19, the detailed configuration of the pixel 20 according to Modification 4 of this embodiment will be described. Figure 19 is a cross-sectional view illustrating an example of the configuration of the pixel 20 according to Modification 4 of this embodiment, and in detail corresponds to a cross-section when the substrate 40 is cut along its film thickness direction.

[0172] In the above-described embodiment, openings 240 are provided in the protective films 290, 292, and 294 to expose the upper surface of the cathode electrode 220, and the wiring 242 is extended to cover at least a portion of the inner wall of the openings 240, thereby electrically connecting the cathode electrodes 220 of adjacent light-emitting elements 110. On the other hand, in this modified example 4, as shown in Figure 19, the wiring 242 is extended to the side surfaces of the protective films 290, 292, and 294 without providing openings 240, thereby electrically connecting the wiring 242 to the outer periphery of the cathode electrode 220. In this modified example 4, the cathode electrodes 220 of adjacent light-emitting elements 110 are electrically connected to each other by the wiring 242 extending from the upper and side surfaces of the protective films 290, 292, and 294, and from the upper surfaces of the protective films 291, 293, and 295.

[0173] Thus, in this modified example 4, since the protective films 290, 292, and 294 do not have openings 240 that expose the upper surface of the cathode electrode 220, it is possible to avoid damage to the cathode electrode 220 and the light-emitting layer 210 during the manufacturing process.

[0174] (Modification 5) Next, with reference to Figure 20, the detailed configuration of the pixel 20 according to Modification 5 of this embodiment will be described. Figure 20 is a cross-sectional view illustrating an example of the configuration of the pixel 20 according to Modification 5 of this embodiment, and in detail corresponds to a cross-section when the substrate 40 is cut along its film thickness direction.

[0175] In this modified example 5, unlike the embodiment described above, protective films 290, 292, and 294 are not provided on the cathode electrode 220, as shown in Figure 20. Therefore, in this modified example 5, the wiring 242 extends over the cathode electrodes 220 of the multiple light-emitting elements 110 and the protective films 291, 293, and 295 that cover the light-emitting layer 210 and the side walls of the cathode electrodes 220, electrically connecting the cathode electrodes 220 of adjacent light-emitting elements 110 to each other. Furthermore, in this modified example 5, the light-emitting elements 110 are covered with a protective film 296.

[0176] Thus, in this modified example 5, the height of each light-emitting element 110 from the upper surface of the substrate 40 is low, and the unevenness caused by the light-emitting elements 110 is smaller compared to this embodiment and the modified examples described so far. Therefore, it becomes easier to manufacture layers to be further laminated on the protective film 296, on-chip lenses, etc.

[0177] <<9. Seventh Embodiment>> Next, with reference to Figures 21A to 21H, a detail of an example of a method for manufacturing a pixel 20 according to the sixth embodiment will be described as a seventh embodiment of the present disclosure. Figures 21A to 21H are cross-sectional views for illustrating the method for manufacturing a pixel 20 according to this embodiment, and show a cross-section of the pixel 20 in each step.

[0178] In this embodiment as well, a mask deposition process is used to sequentially fabricate light-emitting elements 110 that emit red, green, and blue light and are separated from each other, by applying red, green, and blue paint (RGB painting).

[0179] First, in this embodiment, a plurality of electrode layers 270 are formed on a substrate 40 by, for example, a metal film using sputtering, and then patterned using lithography and dry etching. Next, a light-emitting layer 210b that emits blue light is laminated over the entire surface of the substrate 40 including the electrode layers 270. Then, the cathode electrode 220b of the light-emitting element 110b is formed over the entire surface of the substrate 40. Furthermore, a protective film 290 is formed over the entire surface of the substrate 40. In this way, the configuration shown in the upper part of Figure 21A can be obtained.

[0180] Next, as shown in the second row from the top of Figure 21A, a resist 410 is formed to cover the area on the protective film 230 that will become the light-emitting element 110b. Subsequently, as shown in the third row from the top of Figure 21A, the protective film 290, cathode electrode 220b, and light-emitting layer 210b are processed (divided) together along the pattern of the resist 410, for example by a dry etching method, and then the resist 410 is removed. In this way, the laminated structure of the first light-emitting element 110b is fabricated. Next, as shown in the bottom row of Figure 21A, a protective film 291 is laminated over the entire surface of the substrate 40, including the laminated structure of the light-emitting element 110b and the electrode layer 270.

[0181] Then, as shown in the upper part of Figure 21B, for example, by dry etching, the protective film 291 is removed from the areas where it is laminated on the side walls of the laminated structure of the light-emitting element 110b, leaving the protective film 291 in those areas. In this way, the light-emitting element 110b is manufactured. Next, as shown in the second row from the top of Figure 21B, an adjustment layer 280 is laminated over the entire surface of the substrate 40 including the electrode layer 270, and a resist 412 is formed to cover the areas on the adjustment layer 280 that will become the light-emitting element 110g. Furthermore, as shown in the third row from the top of Figure 21B, for example, by dry etching, the adjustment layer 280 is processed (divided) along the pattern of the resist 412, and then the resist 412 is removed. Next, as shown in the lower part of Figure 21B, the electrode layer 272 of the light-emitting element 110g is deposited over the entire surface of the substrate 40, for example by sputtering.

[0182] Furthermore, as shown in the upper part of Figure 21C, a resist 414 is formed to cover the area that will become the light-emitting element 110g. Next, as shown in the second part from the top of Figure 21C, the electrode layer 272 is removed, leaving the electrode layer 272 that is stacked over the area that will become the light-emitting element 110g, for example, by a dry etching method.

[0183] Furthermore, a light-emitting layer 210g that emits green light is laminated over the entire surface of the substrate 40. Then, the cathode electrode 220g of the light-emitting element 110g is deposited over the entire surface of the substrate 40. Furthermore, a protective film 292 is deposited over the entire surface of the substrate 40. In this way, the form shown in the third row from the top of Figure 21C can be obtained. Next, as shown in the lower row of Figure 21C, a resist 416 is formed to cover the area on the protective film 292 that will become the light-emitting element 110g.

[0184] Next, as shown in the upper part of Figure 21D, the protective film 292, cathode electrode 220g, and light-emitting layer 210g are processed (divided) together along the pattern of the resist 416, for example by a dry etching method, and then the resist 416 is removed. In this way, the laminated structure of the second light-emitting element 110g is fabricated. Next, as shown in the second row from the top of Figure 21D, the protective film 293 is laminated over the entire surface of the substrate 40, which includes the laminated structures of the light-emitting elements 110b and 110g and the electrode layer 270. Then, as shown in the lower part of Figure 21D, the protective film 293 is removed from the areas where it is laminated on the side walls of the laminated structure of the light-emitting element 110g, for example by a dry etching method, leaving the protective film 293 in those areas. In this way, the light-emitting element 110g is fabricated.

[0185] Next, as shown in the upper part of Figure 21E, a conditioning layer 280 is laminated over the entire surface of the substrate 40, including the electrode layer 270. Furthermore, as shown in the second part from the top of Figure 21E, a resist 418 is formed to cover the area on the conditioning layer 280 that will become the light-emitting element 110r. Furthermore, as shown in the third part from the top of Figure 21E, the conditioning layer 280 is processed (divided) along the pattern of the resist 418, for example by a dry etching method, and then the resist 418 is removed. Next, as shown in the lower part of Figure 21E, the electrode layer 272 of the light-emitting element 110r is deposited over the entire surface of the substrate 40.

[0186] Furthermore, as shown in the upper part of Figure 21F, a resist 420 is formed to cover the area that will become the light-emitting element 110r. Next, as shown in the second part from the top of Figure 21F, the electrode layer 272 is removed, leaving the electrode layer 272 that is laminated over the area that will become the light-emitting element 110r, for example, by a dry etching method. Furthermore, a light-emitting layer 210r that emits red light is laminated over the entire surface of the substrate 40. Then, the cathode electrode 220r of the light-emitting element 110r is formed over the entire surface of the substrate 40. Furthermore, a protective film 294 is formed over the entire surface of the substrate 40, for example, by a CVD method. In this way, the form shown in the lower part of Figure 21F can be obtained.

[0187] Next, as shown in the upper part of Figure 21G, a resist 422 is formed to cover the area on the protective film 294 that will become the light-emitting element 110r. Subsequently, as shown in the second part from the top of Figure 21G, the protective film 294, cathode electrode 220r, and light-emitting layer 210r are processed (divided) together along the pattern of the resist 422, for example by a dry etching method, and then the resist 422 is removed. In this way, the stacked structure of the third light-emitting element 110r is fabricated. Next, as shown in the lower part of Figure 21G, a protective film 295 is laminated over the entire surface of the substrate 40 containing the stacked structure of light-emitting elements 110b, 110g, and 110r to fabricate the light-emitting element 110r.

[0188] Then, as shown in the upper part of Figure 21H, a resist 424 is formed with openings that expose the central upper surfaces of the light-emitting elements 110b, 110g, and 110r. Subsequently, as shown in the second row from the top of Figure 21H, for example, by dry etching, a portion of the protective films 290, 292, 294, and 295 are removed along the pattern of the resist 424 to form openings 240 that expose the central upper surfaces of the cathode electrodes 220b, 220g, and 220r. Then, by forming the wiring 242 and laminating the protective film 296 over the entire surface of the substrate 40, the form shown in the lower part of Figure 21H can be obtained.

[0189] Furthermore, the display device 10 can be manufactured by patterning the wiring 242, or by forming other protective films (not shown) or on-chip lenses (not shown).

[0190] Furthermore, this embodiment is not limited to the manufacturing method shown in Figures 21A to 21H.

[0191] Furthermore, the display device 10 according to this embodiment can also be manufactured using methods, apparatus, and conditions commonly used in the manufacture of semiconductor devices. In other words, the display device 10 according to this embodiment can be manufactured using existing semiconductor device manufacturing methods.

[0192] <<10. Summary>> As described above, in each embodiment of this disclosure, the anode electrodes of other light-emitting elements 110g, 110r that are adjacent to the light-emitting element 110b and formed second and subsequent times consist of a laminate of electrode layer 200 and electrode layers 202, 204, or a laminate of electrode layer 270, adjustment layer 280 and electrode layer 272. Therefore, in this embodiment, the upper surface of the anode electrodes of the light-emitting elements 110g, 110r is not significantly lower than the height of the upper surface of the light-emitting element 110b. Accordingly, according to this embodiment, the material for the light-emitting layers 210g, 210r is easily deposited on the anode electrodes of the light-emitting elements 110g, 110r. As a result, according to this embodiment, the occurrence of areas where the light-emitting layers 210g, 210r are locally thinned (vignetting) 300 is suppressed, and the light-emitting layers 210g, 210r of the second and subsequent light-emitting elements 110g, 110r can be laminated so that their film thickness is uniform.

[0193] In each embodiment of this disclosure, the stacking order of the anode electrode and cathode electrode 220 of each light-emitting element 110b, 110g, and 110r is not limited to the above description and can be rearranged. In such cases, the lower electrode will be composed of multiple electrode layers.

[0194] Furthermore, in each embodiment of this disclosure, the positions of each light-emitting element 110b, 110g, and 110r, and the stacked structure of their anode electrodes, are not limited to the above description and can be interchanged. Moreover, in each embodiment of this disclosure, the order in which each light-emitting element 110b, 110g, and 110r are manufactured is not limited to the above description and can be interchanged.

[0195] Furthermore, each embodiment of this disclosure is not limited to the form shown in the figures, but can be modified in various ways and can also be combined with one another.

[0196] Furthermore, the display device 10 according to the embodiment of this disclosure can be applied to, for example, display devices for VR (Virtual Reality), MR (Mixed Reality), or AR (Augmented Reality), display devices for smartphones, television equipment, electronic viewfinders (EVF), or small projectors. The display device 10 can also be applied to various lighting devices (light-emitting devices).

[0197] <<11. Modifications>> <11.1 Modification 1> Next, as a modification of the embodiment of the present disclosure, a modification concerning the relationship between the normal LN passing through the center of a subpixel 100 (more specifically, the centers of multiple light-emitting elements 110 included in one subpixel 100), the normal LN' passing through the center of a lens member, and the normal LN" passing through the center of a wavelength selection unit will be described with reference to Figures 22A to 22G. Figures 22A to 22G are conceptual diagrams for explaining the relationship between the normal LN passing through the center of a light-emitting unit, the normal LN' passing through the center of a lens member, and the normal LN" passing through the center of a wavelength selection unit. In the following description, the center of a subpixel 100 will be referred to as the center of a light-emitting unit.

[0198] In embodiments of this disclosure, the size of the wavelength selection section (e.g., color filter) may be appropriately changed in response to the light emitted by the subpixel 100. Furthermore, if a light absorption layer (black matrix layer) is provided between the wavelength selection sections of adjacent subpixels 100, the size of the light absorption layer (black matrix layer) may be appropriately changed in response to the light emitted by the subpixel 100. In addition, the size of the wavelength selection section may be determined by the distance (offset amount) d between the normal vector passing through the center of the subpixel 100 and the normal vector passing through the center of the color filter. ０ Depending on the circumstances, it may be changed as appropriate. The planar shape of the wavelength selection section may be the same as, similar to, or different from, the planar shape of the lens component (e.g., on-chip lens).

[0199] For example, as shown in Figure 22A, the normal vector LN passing through the center of the light-emitting part, the normal vector LN'' passing through the center of the wavelength selection part, and the normal vector LN' passing through the center of the lens member may be made to coincide. In other words, the distance (offset amount) D between the normal vector passing through the center of the light-emitting part and the normal vector passing through the center of the lens member. ０ The distance (offset amount) d between the normal vector passing through the center of the light-emitting part and the normal vector passing through the center of the wavelength-selecting part. ０ This is equivalent to 0 (zero).

[0200] Furthermore, for example, as shown in Figure 22B, the normal vector LN passing through the center of the light-emitting part and the normal vector LN'' passing through the center of the wavelength-selecting part coincide, but the normal vector LN passing through the center of the light-emitting part and the normal vector LN'' passing through the center of the wavelength-selecting part do not have to coincide with the normal vector LN' passing through the center of the lens member. In other words, D ０ ≠d ０ It may also be equal to 0.

[0201] Furthermore, for example, as shown in Figure 22C, the normal vector LN passing through the center of the light-emitting part, the normal vector LN'' passing through the center of the wavelength-selecting part, and the normal vector LN' passing through the center of the lens member do not coincide, but the normal vector LN'' passing through the center of the wavelength-selecting part and the normal vector LN' passing through the center of the lens member may coincide. In other words, D ０ = d ０ It can also be 0.

[0202] Furthermore, as shown in Figure 22D, for example, the normal vector LN passing through the center of the light-emitting part, the normal vector LN'' passing through the center of the wavelength-selecting part, and the normal vector LN' passing through the center of the lens member do not coincide, and the normal vector LN' passing through the center of the lens member does not coincide with the normal vector LN passing through the center of the surface of the light-emitting part and the normal vector LN'' passing through the center of the wavelength-selecting part. Here, it is preferable that the center of the wavelength-selecting part (shown as a black circle in Figure 22D) is located on a straight line LL connecting the center of the surface of the light-emitting part and the center of the lens member (shown as a black circle in Figure 22D). Specifically, the distance from the center of the surface of the light-emitting part in the thickness direction to the center of the wavelength-selecting part is LL. １ The distance from the center of the wavelength selection area in the thickness direction to the center of the lens material is LL ２In that case, D ０ >d ０ > 0, and considering manufacturing variations, d ０ : D ０ =LL １ : (LL １ +LL ２ It is preferable that the following conditions be met.

[0203] Furthermore, the stacking relationship between the wavelength selection unit and the lens member may be reversed. In such a case, for example, as shown in Figure 22E, the normal vector LN passing through the center of the light-emitting unit, the normal vector LN'' passing through the center of the wavelength selection unit, and the normal vector LN' passing through the center of the lens member may be made to coincide. In other words, D ０ = d ０ It may also be equal to 0.

[0204] Furthermore, for example, as shown in Figure 22F, the normal vector LN passing through the center of the light-emitting part, the normal vector LN'' passing through the center of the wavelength-selecting part, and the normal vector LN' passing through the center of the lens member do not coincide, but the normal vector LN'' passing through the center of the wavelength-selecting part and the normal vector LN' passing through the center of the lens member may coincide. In other words, D ０ = d ０ It can also be 0.

[0205] Furthermore, as shown in the conceptual diagram Figure 22G, the normal vector LN passing through the center of the surface of the light-emitting part, the normal vector LN'' passing through the center of the wavelength-selecting part, and the normal vector LN' passing through the center of the lens member do not coincide, and the normal vector LN' passing through the center of the lens member does not coincide with the normal vector LN passing through the center of the surface of the light-emitting part and the normal vector LN'' passing through the center of the wavelength-selecting part. Here, it is preferable that the center of the wavelength-selecting part is located on the straight line LL connecting the center of the surface of the light-emitting part and the center of the lens member. Specifically, the distance from the center of the surface of the light-emitting part in the thickness direction to the center of the wavelength-selecting part (shown as a black circle in Figure 22G) is LL. １ The distance from the center of the wavelength selection area in the thickness direction to the center of the lens member (shown as a black circle in Figure 22G) is LL ２ When that happens, d ０ >D ０ > 0, and considering manufacturing variations, D ０ :d ０ =LL２ : (LL １ +LL ２ It is preferable that the following conditions be met.

[0206] <11.2 Modification 2> The subpixel 1100 (more specifically, the light-emitting element 110) used in the display device according to the embodiment of the present disclosure described above may be configured to include a resonator structure that resonates the light generated in the light-emitting section. The resonator structure will be described below with reference to Figures 23 to 29. Figure 23 is a schematic cross-sectional view illustrating a first example of the resonator structure, Figure 24 is a schematic cross-sectional view illustrating a second example of the resonator structure, and Figure 25 is a schematic cross-sectional view illustrating a third example of the resonator structure. Furthermore, Figure 26 is a schematic cross-sectional view illustrating a fourth example of the resonator structure, and Figure 27 is a schematic cross-sectional view illustrating a fifth example of the resonator structure. In addition, Figure 28 is a schematic cross-sectional view illustrating a sixth example of the resonator structure, and Figure 29 is a schematic cross-sectional view illustrating a seventh example of the resonator structure.

[0207] (Resonator Structure: First Example) Figure 23 is a schematic cross-sectional view illustrating the first example of a resonator structure. In the first example, the first electrode (e.g., anode electrode) 1202 is formed with a common film thickness in each subpixel 1100. The same applies to the second electrode (e.g., cathode electrode) 1206.

[0208] As shown in Figure 23, a reflector 1401 is positioned below the first electrode 1202 of the subpixel 1100, with an optical adjustment layer 1402 in between. A resonator structure is formed between the reflector 1401 and the second electrode 1206 to resonate the light generated by the organic layer (specifically, the light-emitting part) 1204.

[0209] The reflector 1401 is formed with a common film thickness for each subpixel 1100. The film thickness of the optical adjustment layer 1402 differs depending on the color that the subpixel 1100 is to display. By having optical adjustment layers 1402R, 1402G, and 1402B with different film thicknesses, it is possible to set the optical distance that produces the optimal resonance for the wavelength of light corresponding to the color to be displayed.

[0210] In the example shown in Figure 23, the upper surfaces of the reflectors 1401 for subpixels 1100R, 1100G, and 1100B are aligned. As described above, the thickness of the optical adjustment layer 1402 differs depending on the color that the subpixel 1100 should display, so the position of the upper surface of the second electrode 1206 differs depending on the type of subpixel 1100R, 1100G, and 1100B.

[0211] The reflector 1401 can be formed using, for example, a metal such as aluminum (Al), silver (Ag), or copper (Cu), or an alloy mainly composed of these metals.

[0212] The optical adjustment layer 1402 can be constructed using inorganic insulating materials such as silicon nitride (SiNx), silicon oxide (SiOx), or silicon oxynitride (SiOxNy), or organic resin materials such as acrylic resin or polyimide resin. The optical adjustment layer 1402 may be a single layer or a laminated film of multiple materials. Furthermore, the number of layers may vary depending on the type of subpixel 1100.

[0213] The first electrode 1202 can be formed using a transparent conductive material such as indium tin oxide (ITO), indium zinc oxide (IZO), or zinc oxide (ZnO).

[0214] The second electrode 1206 preferably functions as a semi-transparent reflective film. The second electrode 1206 can be formed using magnesium (Mg), silver (Ag), or a magnesium-silver alloy (MgAg) mainly composed of these, or an alloy containing alkali metals or alkaline earth metals.

[0215] (Resonator structure: Second example) Figure 24 is a schematic cross-sectional view illustrating a second example of the resonator structure. In this second example as well, the first electrode 1202 and the second electrode 1206 are formed with a common film thickness in each subpixel 1100.

[0216] In the second example as well, a reflector 1401 is placed beneath the first electrode 1202 of the subpixel 1100, with an optical adjustment layer 1402 in between. A resonator structure is formed between the reflector 1401 and the second electrode 1206 to resonate the light generated by the organic layer 1204. Similar to the first example, the reflector 1401 is formed with a common film thickness for each subpixel 1100, while the film thickness of the optical adjustment layer 1402 differs according to the color that the subpixel 1100 should display.

[0217] In the first example shown in Figure 23, the upper surfaces of the reflectors 1401 for subpixels 1100R, 1100G, and 1100B were aligned, while the position of the upper surface of the second electrode 1206 differed depending on the type of subpixel 1100R, 1100G, and 1100B.

[0218] In contrast, in the second example shown in Figure 24, the upper surface of the second electrode 1206 is arranged to align with the subpixels 1100R, 1100G, and 1100B. In order to align the upper surfaces of the second electrode 1206, the upper surface of the reflector 1401 is arranged differently for the subpixels 1100R, 1100G, and 1100B, depending on the type of subpixel. As a result, the lower surface of the reflector 1401 has a stepped shape depending on the type of subpixel 1100R, 1100G, and 1100B.

[0219] The materials and other components constituting the reflector 1401, the optical adjustment layer 1402, the first electrode 1202, and the second electrode 1206 are the same as those described in the first example, so their explanation will be omitted.

[0220] (Resonator structure: Third example) Figure 25 is a schematic cross-sectional view illustrating the third example of the resonator structure. In the third example as well, the first electrode 1202 and the second electrode 1206 are formed with a common film thickness in each subpixel 1100.

[0221] In the third example, the reflector 1401 is positioned below the first electrode 1202 of the subpixel 1100, with the optical adjustment layer 1402 in between. A resonator structure is formed between the reflector 1401 and the second electrode 1206 to resonate the light generated by the organic layer 1204. Similar to the first and second examples, the thickness of the optical adjustment layer 1402 varies depending on the color that the subpixel 1100 should display. And, similar to the second example, the upper surface of the second electrode 1206 is positioned so that it aligns with the subpixels 1100R, 1100G, and 1100B.

[0222] In the second example shown in Figure 24, the lower surface of the reflector 1401 had a stepped shape corresponding to the type of sub-pixel 1100R, 1100G, and 1100B in order to align the upper surface of the second electrode 1206.

[0223] In contrast, in the third example shown in Figure 25, the film thickness of the reflector 1401 is set to differ depending on the type of sub-pixel 1100R, 1100G, and 1100B. More specifically, the film thickness is set so that the lower surfaces of reflectors 1401R, 1401G, and 1401B are aligned.

[0224] The materials constituting the reflector 1401, the optical adjustment layer 1402, the first electrode 1202, and the second electrode 1206 are the same as those described in the first example, so their explanation will be omitted.

[0225] (Resonator structure: 4th example) Figure 26 is a schematic cross-sectional view illustrating the 4th example of a resonator structure.

[0226] In the first example shown in Figure 23, the first electrode 1202 and the second electrode 1206 of the subpixel 1100 are formed with a common film thickness. A reflector 1401 is placed below the first electrode 1202 of the subpixel 1100, with an optical adjustment layer 1402 in between.

[0227] In contrast, in the fourth example shown in Figure 26, the optical adjustment layer 1402 is omitted, and the film thickness of the first electrode 1202 is set to differ depending on the type of subpixel 1100R, 1100G, and 1100B.

[0228] The reflector 1401 is formed with a common film thickness for each subpixel 1100. The film thickness of the first electrode 1202 differs depending on the color that the subpixel 1100 is to display. By having the first electrodes 1202R, 1202G, and 1202B have different film thicknesses, it is possible to set the optical distance that produces the optimal resonance for the wavelength of light corresponding to the color to be displayed.

[0229] The materials constituting the reflector 1401, the first electrode 1202, and the second electrode 1206 are the same as those described in the first example, so their explanation will be omitted.

[0230] (Resonator structure: Fifth example) Figure 27 is a schematic cross-sectional view illustrating the fifth example of a resonator structure.

[0231] In the first example shown in Figure 23, the first electrode 1202 and the second electrode 1206 are formed with a common film thickness in each subpixel 1100. A reflector 1401 is placed below the first electrode 1202 of the subpixel 1100, with an optical adjustment layer 1402 in between.

[0232] In contrast, in the fifth example shown in Figure 27, the optical adjustment layer 1402 was omitted, and instead, an oxide film 1404 was formed on the surface of the reflector 1401. The thickness of the oxide film 1404 was set to differ depending on the type of subpixel 1100R, 1100G, and 1100B.

[0233] The thickness of the oxide film 1404 varies depending on the color that the subpixel 1100 is to display. By having oxide films 1404R, 1404G, and 1404B with different thicknesses, it is possible to set the optical distance that produces the optimal resonance for the wavelength of light corresponding to the color to be displayed.

[0234] The oxide film 1404 is a film obtained by oxidizing the surface of the reflector 1401, and is composed of, for example, aluminum oxide, tantalum oxide, titanium oxide, magnesium oxide, zirconium oxide, etc. The oxide film 1404 functions as an insulating film for adjusting the optical path length (optical distance) between the reflector 1401 and the second electrode 1206.

[0235] The oxide film 1404, which has a different thickness depending on the type of subpixel 1100R, 1100G, and 1100B, can be formed, for example, as follows.

[0236] First, the container is filled with electrolyte, and the substrate on which the reflector 1401 is formed is immersed in the electrolyte. Then, electrodes are positioned opposite the reflector 1401.

[0237] Then, a positive voltage is applied to the reflector 1401 with the electrode as the reference, and the reflector 1401 is anodized. The thickness of the oxide film formed by anodization is proportional to the voltage value applied to the electrode. Therefore, anodization is performed on each of the reflectors 1401R, 1401G, and 1401B with a voltage corresponding to the type of sub-pixel 1100R, 1100G, and 1100B applied. This makes it possible to form oxide films 1404 of different thicknesses all at once.

[0238] The materials constituting the reflector 1401, the first electrode 1202, and the second electrode 1206 are the same as those described in the first example, so their explanation will be omitted.

[0239] (Resonator Structure: Sixth Example) Figure 28 is a schematic cross-sectional view illustrating the sixth example of a resonator structure. In the sixth example, the subpixel 1100 is constructed by stacking a first electrode 1202, an organic layer 1204, and a second electrode 1206. However, in the sixth example, the first electrode 1202 is formed to serve both as an electrode and a reflector. The first electrode (and reflector) 1202 is made of a material having optical constants selected according to the type of subpixel 1100R, 1100G, and 1100B. By different phase shifts caused by the first electrode (and reflector) 1202, it is possible to set an optical distance that produces optimal resonance for the wavelength of light corresponding to the color to be displayed.

[0240] The first electrode (and reflector) 1202 can be made from a single metal such as aluminum (Al), silver (Ag), gold (Au), or copper (Cu), or from an alloy mainly composed of these metals. For example, the first electrode (and reflector) 1202R of the subpixel 1100R can be made of copper (Cu), and the first electrode (and reflector) 1202G of the subpixel 1100G and the first electrode (and reflector) 1202B of the subpixel 1100B can be made of aluminum.

[0241] The materials and other components constituting the second electrode 1206 are the same as those described in the first example, so we will omit further explanation.

[0242] (Resonator Structure: Seventh Example) Figure 29 is a schematic cross-sectional view illustrating the seventh example of the resonator structure. The seventh example basically applies the sixth example to sub-pixels 1100R and 1100G, and the first example to sub-pixel 1100B. In this configuration as well, it is possible to set the optical distance that produces optimal resonance for the wavelength of light corresponding to the color to be displayed.

[0243] The first electrodes (which also serve as reflectors) 1202R and 1202G used in the sub-pixels 1100R and 1100G can be made from elemental metals such as aluminum (Al), silver (Ag), gold (Au), and copper (Cu), or alloys in which these metals are the main components.

[0244] The materials constituting the reflector 1401B, optical adjustment layer 1402B, and first electrode 1202B used in the subpixel 1100B are the same as those described in the first example, so their explanation will be omitted.

[0245] <<12. Application Examples>> For example, the technology relating to this disclosure may be applied to the display units of various electronic devices. Therefore, examples of electronic devices to which this technology can be applied will be described below.

[0246] (Specific Example 1) Figure 30A is a front view showing an example of the external appearance of the digital still camera 500, and Figure 30B is a rear view showing an example of the external appearance of the digital still camera 500. This digital still camera 500 is a single-lens reflex type with interchangeable lenses, and has an interchangeable shooting lens unit (interchangeable lens) 512 located approximately in the center of the front of the camera body 511, and a grip portion 513 for the photographer to hold on the left side of the front.

[0247] A monitor 514 is provided on the back of the camera body 511, slightly to the left of the center. An electronic viewfinder (eyepiece) 515 is provided above the monitor 514. The photographer can determine the composition by looking through the electronic viewfinder 515 and visually confirming the light image of the subject guided by the shooting lens unit 512. The display device 10 according to the embodiment of this disclosure can be used as the monitor 514 and the electronic viewfinder 515.

[0248] (Specific Example 2) Figure 31 is an external view of a head-mounted display 600. The head-mounted display 600 has, for example, an eyeglass-shaped display unit 611 and ear hooks 612 on both sides for attachment to the user's head. In this head-mounted display 600, the display device 10 according to the embodiment of this disclosure can be used as the display unit 611.

[0249] (Specific Example 3) Figure 32 is an external view of the see-through head-mounted display 634. The see-through head-mounted display 634 consists of a main body 632, an arm 633, and a lens barrel 631.

[0250] The main body 632 is connected to the arm 633 and the eyeglasses 630. Specifically, the long end of the main body 632 is connected to the arm 633, and one side of the main body 632 is connected to the eyeglasses 630 via a connecting member. The main body 632 may also be directly attached to the head of a person.

[0251] The main body 632 houses a control board for controlling the operation of the see-through head-mounted display 634 and a display unit. The arm 633 connects the main body 632 to the lens barrel 631 and supports the lens barrel 631. Specifically, the arm 633 is connected to the end of the main body 632 and the end of the lens barrel 631, respectively, and fixes the lens barrel 631 in place. The arm 633 also houses signal lines for communicating image-related data provided from the main body 632 to the lens barrel 631.

[0252] The lens barrel 631 projects image light, provided from the main body 632 via the arm 633, through the eyepiece lens towards the eyes of the user wearing the see-through head-mounted display 634. In this see-through head-mounted display 634, the display device 10 according to the embodiment of this disclosure can be used in the display section of the main body 632.

[0253] (Specific Example 4) Figure 33 shows an example of the appearance of a television device 710. This television device 710 has, for example, a video display screen section 711 including a front panel 712 and a filter glass 713, and this video display screen section 711 is configured by a display device 10 according to the embodiment of this disclosure.

[0254] (Specific Example 5) Figure 34 shows an example of the appearance of a smartphone 800. The smartphone 800 has a display unit 802 that displays various information, and an operation unit consisting of buttons, etc. that accept user input. The display unit 802 may be the display device 10 according to this embodiment.

[0255] (Specific Example 6) Figures 35A and 35B show the internal configuration of an automobile having a display device 10 according to the embodiment of this disclosure as a display device. More specifically, Figure 35A shows the interior of the automobile from the rear to the front, and Figure 35B shows the interior of the automobile from the diagonally rear to the diagonally front.

[0256] The automobile shown in Figures 35A and 35B includes a center display 911, a console display 912, a head-up display 913, a digital rear mirror 914, a steering wheel display 915, and a rear entertainment display 916. Some or all of these displays can be fitted with the display device 10 according to the embodiment of this disclosure.

[0257] The center display 911 is located on the center console 907, facing the driver's seat 901 and the passenger seat 902. Figures 35A and 35B show an example of a horizontally elongated center display 911 extending from the driver's seat 901 to the passenger seat 902, but the screen size and location of the center display 911 are arbitrary. The center display 911 can display information detected by various sensors (not shown). As a specific example, the center display 911 can display images captured by an image sensor, distance images to obstacles in front of or to the side of the vehicle measured by a ToF (Time of Flight) sensor, and the body temperature of passengers detected by an infrared sensor. The center display 911 can be used to display at least one of the following: safety-related information, operation-related information, life logs, health-related information, authentication / identification-related information, and entertainment-related information.

[0258] Safety-related information includes information such as drowsiness detection, distraction detection, detection of mischief by a passenger, seatbelt fastening status, and detection of an unattended occupant. This information is detected, for example, by a sensor (not shown) placed on top of the back of the center display 1911. Operation-related information is detected by sensing occupant gestures using sensors. The detected gestures may include the operation of various equipment in the vehicle. For example, the sensor detects the operation of air conditioning equipment, navigation systems, AV (Audio / Visual) systems, lighting systems, etc. Life logs include the life logs of all occupants. For example, life logs include records of each occupant's actions while riding in the vehicle. By acquiring and saving life logs, it is possible to confirm the state of the occupants at the time of an accident. Health-related information is detected by sensing the occupant's body temperature using a temperature sensor and inferring the occupant's health status based on the detected body temperature. Alternatively, the occupant's face may be captured using an image sensor, and the occupant's health status may be inferred from the facial expression captured. Furthermore, the system may engage in automated voice conversations with the occupants and infer their health status based on their responses. Authentication / identification-related information includes keyless entry functions that use sensors for facial recognition and functions that automatically adjust seat height and position based on facial recognition. Entertainment-related information includes functions that use sensors to detect information on how the occupants operate the AV equipment and functions that use sensors to recognize the occupants' faces and provide content suitable for the occupants through the AV equipment.

[0259] The console display 912 can be used, for example, to display life log information. The console display 912 is located near the shift lever 908 on the center console 907 between the driver's seat 901 and the passenger seat 902. The console display 912 can also display information detected by various sensors (not shown). In addition, the console display 912 may display an image of the area around the vehicle captured by an image sensor, or it may display an image showing the distance to obstacles around the vehicle.

[0260] The head-up display 913 is virtually displayed behind the windshield 904 in front of the driver's seat 901. The head-up display 913 can be used to display at least one of the following: safety-related information, operation-related information, life logs, health-related information, authentication / identification-related information, and entertainment-related information. Because the head-up display 913 is often virtually positioned in front of the driver's seat 901, it is suitable for displaying information directly related to the operation of the vehicle, such as the vehicle's speed and fuel (battery) level.

[0261] The digital rearview mirror 914 can not only display the area behind the vehicle but also show the condition of the passengers in the rear seat. By placing a sensor (not shown) on top of the back of the digital rearview mirror 914, it can be used, for example, to display life log information.

[0262] The steering wheel display 915 is positioned near the center of the steering wheel 906 of the automobile. The steering wheel display 915 can be used to display at least one of the following: safety-related information, operation-related information, life log, health-related information, authentication / identification-related information, and entertainment-related information. In particular, because the steering wheel display 915 is located near the driver's hands, it is suitable for displaying life log information such as the driver's body temperature, or information related to the operation of AV equipment, air conditioning equipment, etc.

[0263] The rear entertainment display 916 is mounted on the back of the driver's seat 901 and the passenger seat 902, and is intended for viewing by rear-seat passengers. The rear entertainment display 916 can be used to display at least one of the following: safety-related information, operation-related information, life logs, health-related information, authentication / identification-related information, and entertainment-related information. In particular, because the rear entertainment display 916 is in front of the rear-seat passengers, it displays information relevant to the rear-seat passengers. For example, it may display information related to the operation of AV equipment or air conditioning equipment, or it may display the results of measurements of the rear-seat passengers' body temperature, etc., taken by a temperature sensor (not shown).

[0264] <<13. Supplementary Information>> Although preferred embodiments of the present disclosure have been described in detail with reference to the attached drawings, the technical scope of the present disclosure is not limited to such examples. It is clear that a person with ordinary skill in the art of the present disclosure may conceive of various modifications or alterations within the scope of the technical ideas described in the claims, and these will naturally also fall within the technical scope of the present disclosure.

[0265] Furthermore, the effects described herein are merely descriptive or illustrative and not limiting. In other words, the technology relating to this disclosure may produce other effects that will be apparent to those skilled in the art from the description herein, in addition to or in lieu of the effects described herein.

[0266] Furthermore, this technology can also take the following configurations: (1) A display device comprising a plurality of light-emitting elements, including a first light-emitting element and a second light-emitting element, arranged in a matrix on a semiconductor substrate and emitting light of different colors from each other, wherein each light-emitting element has a lower electrode that reflects light, a light-emitting layer provided on the lower electrode, and an upper electrode provided on the light-emitting layer, wherein the lower electrode of the first light-emitting element consists of a first lower electrode layer, and the lower electrode of the second light-emitting element consists of a first lower electrode layer and a second lower electrode layer laminated on the first lower electrode layer, (2) The display device according to (1) above, wherein in at least one of the light-emitting elements, the side surface of the upper electrode, the side surface of the light-emitting layer, and the side surface of the lower electrode are flush. (3) The display device according to (1), wherein the second lower electrode layer comprises a first adjustment layer made of an insulating material laminated on the first lower electrode layer, a first electrode member laminated on the first adjustment layer, and a second electrode member that covers at least a part of the side surface of the first adjustment layer and electrically connects the first electrode member and the first lower electrode layer. (4) The display device according to any one of (1) to (3), wherein the lower electrode of the first light-emitting element and the lower electrode of the second light-emitting element have different film thicknesses. (5) The display device according to any one of (1) to (4), wherein the first lower electrode layer of the lower electrodes of the first and second light-emitting elements is covered with a first transparent conductive film. (6) The display device according to any one of (1) to (5), wherein the second lower electrode layer of the lower electrode of the second light-emitting element is covered with a second transparent conductive film. (7) The plurality of light-emitting elements include a third light-emitting element that emits light of a different color from the first and second light-emitting elements, and the lower electrode of the third light-emitting element comprises a first lower electrode layer and a third lower electrode layer laminated on the first lower electrode layer, as described in (1) above. (8) The lower electrode of the first light-emitting element, the lower electrode of the second light-emitting element, and the lower electrode of the third light-emitting element have different film thicknesses, as described in (7) above. (9) The third lower electrode layer comprises a lamination of a plurality of reflective material layers, as described in (7) above.(10) The display device according to (3), wherein the plurality of light-emitting elements include a third light-emitting element that emits light of a different color from the first and second light-emitting elements, the lower electrode of the third light-emitting element comprises a first lower electrode layer and a third lower electrode layer laminated on the first lower electrode layer, the third lower electrode layer comprises a second adjustment layer made of an insulating material laminated on the first lower electrode layer, a third electrode member laminated on the second adjustment layer, and a fourth electrode member that covers at least a part of the side surface of the second adjustment layer and electrically connects the third electrode member and the first lower electrode layer. (11) The display device according to any one of (7) to (10), wherein the third lower electrode layer of the lower electrode of the third light-emitting element is covered with a third transparent conductive film. (12) The display device according to any one of (7) to (11), wherein at least two of the first, second and third lower electrode layers are made of the same material. (13) The display device according to any one of (7) to (11) above, wherein at least two of the first, second, and third lower electrode layers are made of different materials. (14) The display device according to any one of (1) to (13) above, wherein the upper electrodes of adjacent light-emitting elements are electrically connected via wiring extending over the plurality of light-emitting elements. (15) The display device according to (14) above, wherein each light-emitting element further comprises a protective film for protecting the upper electrode. (16) The display device according to (15) above, wherein the protective film has an opening that exposes the upper surface of the upper electrode, and the upper electrodes of adjacent light-emitting elements are electrically connected to each other via wiring extending over the upper surface of the protective film and the inner wall of the opening. (17) The display device according to (16) above, wherein the wiring located between adjacent light-emitting elements is provided between adjacent light-emitting elements and on a fourth lower electrode layer located at the same height as the first lower electrode layer. (18) The display device according to (15), wherein the upper electrodes of adjacent light-emitting elements are electrically connected to each other via the wiring that extends the upper and side surfaces of the protective film.(19) The display device according to any one of (1) to (18) above, wherein each of the light-emitting elements has a polygonal, circular, or elliptical shape when viewed from above the semiconductor substrate. (20) The display device according to any one of (1) to (19) above, wherein the plurality of light-emitting elements are arranged in a stripe pattern, a square pattern, or a delta pattern when viewed from above the semiconductor substrate. (21) The display device according to any one of (1) to (20) above, wherein the light-emitting layer emits at least one of red light, green light, and blue light. (22) The display device according to any one of (1) to (21) above, wherein the light-emitting element is an OLED. (23) A method for manufacturing a display device comprising a plurality of light-emitting elements, including a first light-emitting element and a second light-emitting element, arranged in a matrix on a semiconductor substrate and emitting light of different colors from each other, comprising: laminating a first lower electrode layer on the semiconductor substrate; dividing the first lower electrode layer for each of the first and second light-emitting elements; laminating a first light-emitting layer on the first lower electrode layer corresponding to the first light-emitting element; laminating a second lower electrode layer on the first lower electrode layer corresponding to the second light-emitting element; and laminating a second light-emitting layer on the second lower electrode layer. (24) Electronic device equipped with a display device, wherein the display device comprises a plurality of light-emitting elements, including a first light-emitting element and a second light-emitting element, arranged in a matrix on a semiconductor substrate and emitting light of different colors from each other, wherein each light-emitting element has a lower electrode that reflects light, a light-emitting layer provided on the lower electrode, and an upper electrode provided on the light-emitting layer, wherein the lower electrode of the first light-emitting element consists of a first lower electrode layer, and the lower electrode of the second light-emitting element consists of a first lower electrode layer and a second lower electrode layer laminated on the first lower electrode layer.

[0267] 10 Display device 11 Horizontal drive circuit 12 Vertical drive circuit 20, 20a Pixel 40 Substrate 100, 100B, 100G, 100R, 102, 102B, 102G, 102R Subpixel 110, 110b, 110g, 110r, 112, 112b, 112g, 112r Light-emitting element 200a Anode electrode 200, 202, 204, 206, 250, 270, 272, 274 Electrode layer 208, 208g, 208r, 209 Transparent conductive film 210, 210b, 210g, 210r Light-emitting layer 220, 220b, 220g, 220r Cathode electrode 230, 230g, 230r, 232, 232g, 232r, 238, 290, 291, 292, 293, 294, 295, 296 Protective film 240 Aperture 242 Wiring 260 SiN film 280 Adjustment layer 300 Vignetting 400, 402, 404, 406, 410, 412, 414, 416, 418, 420, 422, 424 Resist

Claims

1. A display device comprising a plurality of light-emitting elements, including a first light-emitting element and a second light-emitting element, arranged in a matrix on a semiconductor substrate and emitting light of different colors from each other, wherein each light-emitting element has a lower electrode that reflects light, a light-emitting layer provided on the lower electrode, and an upper electrode provided on the light-emitting layer, wherein the lower electrode of the first light-emitting element consists of a first lower electrode layer, and the lower electrode of the second light-emitting element consists of a first lower electrode layer and a second lower electrode layer laminated on the first lower electrode layer.

2. The display device according to claim 1, wherein in at least one of the light-emitting elements, the side surface of the upper electrode, the side surface of the light-emitting layer, and the side surface of the lower electrode are flush.

3. The display device according to claim 1, wherein the second lower electrode layer comprises a first adjustment layer made of an insulating material laminated on the first lower electrode layer, a first electrode member laminated on the first adjustment layer, and a second electrode member that covers at least a portion of the side surface of the first adjustment layer and electrically connects the first electrode member and the first lower electrode layer.

4. The display device according to claim 1, wherein the lower electrode of the first light-emitting element and the lower electrode of the second light-emitting element have different film thicknesses.

5. The display device according to claim 1, wherein the first lower electrode layer of the lower electrodes of the first and second light-emitting elements is covered with a first transparent conductive film.

6. The display device according to claim 1, wherein the second lower electrode layer of the lower electrode of the second light-emitting element is covered with a second transparent conductive film.

7. The display device according to claim 1, wherein the plurality of light-emitting elements include a third light-emitting element that emits light of a different color from the first and second light-emitting elements, and the lower electrode of the third light-emitting element comprises a first lower electrode layer and a third lower electrode layer laminated on the first lower electrode layer.

8. The display device according to claim 7, wherein the lower electrode of the first light-emitting element, the lower electrode of the second light-emitting element, and the lower electrode of the third light-emitting element have different film thicknesses.

9. The display device according to claim 7, wherein the third lower electrode layer is made up of a stack of multiple reflective material layers.

10. The display device according to claim 3, wherein the plurality of light-emitting elements include a third light-emitting element that emits light of a different color from the first and second light-emitting elements, the lower electrode of the third light-emitting element comprises a first lower electrode layer and a third lower electrode layer laminated on the first lower electrode layer, the third lower electrode layer comprises a second adjustment layer made of an insulating material laminated on the first lower electrode layer, a third electrode member laminated on the second adjustment layer, and a fourth electrode member that covers at least a portion of the side surface of the second adjustment layer and electrically connects the third electrode member and the first lower electrode layer.

11. The display device according to claim 7, wherein the third lower electrode layer of the lower electrode of the third light-emitting element is covered with a third transparent conductive film.

12. The display device according to claim 7, wherein at least two of the first, second, and third lower electrode layers are made of the same material.

13. The display device according to claim 7, wherein at least two of the first, second, and third lower electrode layers are made of different materials.

14. The display device according to claim 1, wherein the upper electrodes of adjacent light-emitting elements are electrically connected via wiring extending over the plurality of light-emitting elements.

15. The display device according to claim 14, wherein each of the light-emitting elements further comprises a protective film for protecting the upper electrode.

16. The display device according to claim 15, wherein the protective film has an opening that exposes the upper surface of the upper electrode, and the upper electrodes of adjacent light-emitting elements are electrically connected to each other via the wiring that extends the upper surface of the protective film and the inner wall of the opening.

17. The display device according to claim 16, wherein the wiring located between adjacent light-emitting elements is provided between adjacent light-emitting elements and on a fourth lower electrode layer located at the same height as the first lower electrode layer.

18. The display device according to claim 15, wherein the upper electrodes of adjacent light-emitting elements are electrically connected to each other via the wiring extending from the upper and side surfaces of the protective film.

19. The display device according to claim 1, wherein each of the light-emitting elements has a polygonal, circular, or elliptical shape when viewed from above the semiconductor substrate.

20. The display device according to claim 1, wherein the plurality of light-emitting elements are arranged in a stripe pattern, a square pattern, or a delta pattern when viewed from above the semiconductor substrate.

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