Composition for forming resist underlayer film, resist underlayer film, method for forming resist pattern, and method for manufacturing semiconductor device

WO2026105630A1PCT designated stage Publication Date: 2026-05-21NISSAN CHEM CORP
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Patent Information

Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
NISSAN CHEM CORP
Filing Date
2025-11-05
Publication Date
2026-05-21

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Abstract

Provided is a composition for forming a resist underlayer film, containing: a resin (G) having an indole structure and at least one carbon-carbon triple bond in a side chain, and a solvent.
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