Reflective mask blank, reflective mask, and method for manufacturing reflective mask

Abstract

Provided is a reflective mask blank in which after an absorber film is etched, a modified layer does not readily form on the side surface of the absorber film exposed by etching, the etching rate of a buffer layer is high, and the crystallinity of the buffer layer is low.　This reflective mask blank has a substrate, a multilayer reflective film that reflects EUV light, a buffer layer, and an absorber film in the stated order, wherein the absorber film contains platinum, the buffer layer contains nitrogen, and the nitrogen content is 20 at% or less relative to all atoms in the buffer layer.

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