Method for tungsten-based thin film deposition via fabrication and decomposition of precursor metastable complexes (molecular species)
The controlled generation and delivery of vapor phase metastable complexes address the need for precise tungsten-based thin film deposition on thermally fragile substrates, achieving high-quality films with controlled composition and morphology at reduced temperatures.
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- KALARK NANOSTRUCTURE SCIENCES INC
- Filing Date
- 2025-11-05
- Publication Date
- 2026-05-21
AI Technical Summary
The challenge in semiconductor and hetero-device manufacturing is the need for a low-temperature process to deposit tungsten-based thin films with precise composition, morphology, structure, and thickness, while avoiding thermal degradation and halide-induced reactions, especially on thermally fragile substrates and materials.
A method involving the controlled generation and delivery of vapor phase metastable complexes from tungsten source precursors, using temperature and plasma conditions to form tungsten-based thin films on substrates at reduced temperatures, preventing self-reaction and ensuring precise film conformality and composition.
Enables the deposition of high-quality tungsten-based thin films on various substrates, including thermally fragile materials, with controlled composition, morphology, and thickness, while maintaining low processing temperatures below 600°C.
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