High-power semiconductor device package

Abstract

A high-power semiconductor device package comprising: a lower aluminium nitride substrate layer overlaid with a lower metallisation layer; an upper aluminium nitride substrate layer underlaid with an upper metallisation layer; a gallium nitride on silicon die overlaid with an upper die metallisation layer and underlaid with a lower die metallisation layer, the gallium nitride on silicon die sandwiched between the lower aluminium nitride substrate layer and the upper aluminium nitride substrate layer by: a lower solder layer between the lower metallisation layer and the lower die metallisation layer, and an upper solder layer between the upper die metallisation layer and the upper metallisation layer.

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